JPS6362261A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6362261A JPS6362261A JP20639886A JP20639886A JPS6362261A JP S6362261 A JPS6362261 A JP S6362261A JP 20639886 A JP20639886 A JP 20639886A JP 20639886 A JP20639886 A JP 20639886A JP S6362261 A JPS6362261 A JP S6362261A
- Authority
- JP
- Japan
- Prior art keywords
- output
- semiconductor integrated
- circuit
- signal
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000872 buffer Substances 0.000 claims abstract description 20
- 230000010355 oscillation Effects 0.000 claims description 15
- 238000012360 testing method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特にICテスタを用い
た半導体集積装置の試験時に出力の同時動作によって発
生する半導体集積装置の誤動作を防止する為の、出力同
時動作防止回路に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to semiconductor integrated circuits, and in particular, to preventing malfunctions of semiconductor integrated devices caused by simultaneous output operations during testing of semiconductor integrated devices using an IC tester. This invention relates to a simultaneous output operation prevention circuit.
lCテスタを用いた半導体集積装置の試験では、ICテ
スタの構造上、半導体集積装置の出力に対する負荷容量
が大きい為に、半導体集積装置の複数の出力が同時に変
化すると、電源線或いは接地線に雑音が発生し、半導体
集積装置が誤動作し、正常カ試験ができないという問題
がある。When testing semiconductor integrated devices using an IC tester, due to the structure of the IC tester, the load capacity for the output of the semiconductor integrated device is large, so if multiple outputs of the semiconductor integrated device change simultaneously, noise may be generated on the power supply line or ground line. occurs, the semiconductor integrated device malfunctions, and a normal power test cannot be performed.
従来、上述の出力同時動作に依る誤動作を防止する方法
として、半導体集積装置内の内部ケートの出力と出力バ
ッファの入力との間に遅延用のゲートを適当に挿入し、
複数の出力が同時に変化しない様にする方法や、同時に
変化可能な出力の本数を規定する方法があった。Conventionally, as a method for preventing malfunctions due to the above-mentioned simultaneous output operations, a delay gate is appropriately inserted between the output of an internal gate in a semiconductor integrated device and the input of an output buffer.
There were methods to prevent multiple outputs from changing at the same time, and methods to specify the number of outputs that could change simultaneously.
上述した従来の内部ケートと出力バッファとの間に遅延
用のゲートを挿入する方法でd、ゲートアレイの様なゲ
ートの伝搬遅延時間を正確に保証できない場合、多数の
遅延用のゲートを必要とし、その為に出力信号相互の位
相差が非常に大きくなるという欠点がある。又、同時動
作可能な出力の個数を規定する方法では、半導体集積装
置が複雑になり、出力端子数が増加するのに伴ない、出
力の同時動作数を規定の個数内に納めるということが非
常に困難になるという欠点がある。The conventional method of inserting a delay gate between the internal gate and the output buffer described above requires a large number of delay gates when the propagation delay time of the gate cannot be guaranteed accurately, such as in a gate array. Therefore, there is a drawback that the phase difference between the output signals becomes very large. Furthermore, with the method of specifying the number of outputs that can operate simultaneously, as semiconductor integrated devices become more complex and the number of output terminals increases, it becomes increasingly difficult to keep the number of outputs that can operate simultaneously within the specified number. The disadvantage is that it is difficult to
本発明の出力同時動作防止回路は、半導体集積装置外部
から動作状態を制御可能な発振回路、計数回路及び復号
回路と複数のスリースチードパ。The simultaneous output operation prevention circuit of the present invention includes an oscillation circuit, a counting circuit, a decoding circuit, and a plurality of three-speed gates whose operating states can be controlled from outside the semiconductor integrated device.
ファとから成シ、発振回路の出力端子には計数回路のク
ロック入力端子が、計数回路の出力端子には復号回路の
入力端子が、復号回路の各々の出力端子には半導体集積
装置に許容さnた同時動作可能な外部出力端子数以下の
スリーステートバッファの制御信号入力端子が接続され
、こnらスリーステートバッファは半導体集積装置の出
力となるべき信号を出す内部ゲートの出力端子と、半導
体集積装置の外部出力端子との間に挿入されている構造
を有している。The output terminal of the oscillation circuit is the clock input terminal of the counting circuit, the output terminal of the counting circuit is the input terminal of the decoding circuit, and each output terminal of the decoding circuit has a clock input terminal of the counting circuit. The control signal input terminals of the three-state buffers, which are equal to or less than the number of external output terminals that can operate simultaneously, are connected, and these three-state buffers are connected to the output terminals of internal gates that output signals to be output from the semiconductor integrated device, and It has a structure inserted between the integrated device and the external output terminal.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例のプロ、り図である。FIG. 1 is a schematic diagram of an embodiment of the present invention.
図において、発振回路1.計数回路2.復号回路3は、
外部制御信号入力端子15に適当な信号を印加されたと
き、動作状態が制御される様になっている。発振回路1
の出力は計数回路2のクロック入力上して与えられ、計
数回路2の出力は復号回路30入力として与えられる。In the figure, oscillation circuit 1. Counting circuit 2. The decoding circuit 3 is
The operating state is controlled when an appropriate signal is applied to the external control signal input terminal 15. Oscillation circuit 1
The output of the counting circuit 2 is applied to the clock input of the counting circuit 2, and the output of the counting circuit 2 is applied as the decoding circuit 30 input.
復号回路3の出力4.5.6.7等は、スリーステート
バッファ9,10,11.12等の制御信号入力として
与えられ、これらスリーステートバッファ9,10゜1
1.12等を導通状態又は非導通状態となる様に制御し
、その結果、論理回路8の出力信号が半導体集積装置の
外部出力端子16.17.1B。Outputs 4, 5, 6, 7, etc. of the decoding circuit 3 are given as control signal inputs to three-state buffers 9, 10, 11, 12, etc., and these three-state buffers 9, 10°1
1.12, etc. are controlled to be in a conductive state or a non-conductive state, and as a result, the output signal of the logic circuit 8 is outputted to the external output terminal 16, 17.1B of the semiconductor integrated device.
19等に現れるタイミングを制御する。Controls the timing of appearance in 19th mag.
第1図の回路の動作を第2図のタイムチャートを用いて
具体的に説明する。The operation of the circuit shown in FIG. 1 will be specifically explained using the time chart shown in FIG.
発振回路lの出力(信号1)は、半導体集積装置の基本
クロック(信号2)に比べ十分高い周波数であり、外部
制御信号(信号3)が高レベルの時は低レベル状態の状
態を保つ。The output (signal 1) of the oscillation circuit 1 has a sufficiently higher frequency than the basic clock (signal 2) of the semiconductor integrated device, and remains at a low level when the external control signal (signal 3) is at a high level.
復号回路3の出力4,5,6.7等(信号4゜5.6等
)は、外部制御信号(信号3)が高レベルの時、すべて
のスリーステートバッファ9 、10゜11.12等の
出力(信号7.8.9等)がハイインピーダンスになる
様な信号(第2図では低レベル信号)を出す。計数回路
2は、外部制御信号(信号3)が高レベルの時には初期
値に設定されたままであり、一方外部制御信号(信喜3
)が低レベルになシ、発振回路lが動作すると、発振回
路lの出力をクロックとして計数回路2は計数を開始す
る。計数回路2が計数を開始し、その出力は復号回路3
へ与えられる。復号回路3は計数回路2からの出力を元
に、復号回路3の出力4,5゜6.7等からスリーステ
ートバッファ9,10゜11.12等が導通状態となる
信号(低レベル信号)を、半導体集積装置の出力が同時
動作とならない時間間隔で、順次出す様になっている。Outputs 4, 5, 6.7, etc. (signals 4, 5, 6, etc.) of the decoding circuit 3 are output from all three-state buffers 9, 10, 11, 12, etc. when the external control signal (signal 3) is at a high level. A signal (low level signal in Fig. 2) is output such that the output (signals 7, 8, 9, etc.) becomes high impedance. The counting circuit 2 remains set to the initial value when the external control signal (signal 3) is at a high level;
) is at a low level, and when the oscillation circuit 1 operates, the counting circuit 2 starts counting using the output of the oscillation circuit 1 as a clock. Counting circuit 2 starts counting, and its output is sent to decoding circuit 3.
given to. Based on the output from the counting circuit 2, the decoding circuit 3 generates a signal (low level signal) that makes the three-state buffers 9, 10, 11, 12, etc. conductive from the outputs 4, 5°, 6.7, etc. of the decoding circuit 3. are sequentially output at time intervals in which the outputs of the semiconductor integrated device do not operate simultaneously.
次に上述の各回路の動作を時間を追いながら説明する。Next, the operation of each of the above-mentioned circuits will be explained over time.
時間Oに於て、半導体集積装置の基本クロ、り(信号2
)が変化する。At time O, the basic clock signal of the semiconductor integrated device (signal 2
) changes.
基本クロ、り(信号2)の変化と同時に、第1図の外部
制御信号入力端子15に印加された外部制御信号(信号
3)は高レベルになり、第1図の半導体集積装置内の論
理回路8の状態が安定する迄高レベルを保ち、その間発
振回路1は動作を停止し、スリーステートバッファ9,
10,11゜12等の出力(信号7,8.9等)即ち第
1図の半導体集積装置の外部出力端子16.17,18
゜19等はハイインピーダンス状態を保つ。At the same time as the basic clock signal (signal 2) changes, the external control signal (signal 3) applied to the external control signal input terminal 15 in FIG. 1 becomes high level, and the logic inside the semiconductor integrated device in FIG. The high level is maintained until the state of the circuit 8 becomes stable, during which time the oscillation circuit 1 stops operating, and the three-state buffer 9,
Outputs 10, 11, 12, etc. (signals 7, 8, 9, etc.), that is, external output terminals 16, 17, 18 of the semiconductor integrated device in FIG.
゜19 mag maintains a high impedance state.
次に、時間’r72に於て外部制御信号(信号3)を高
レベルから低レベルへ変化させると、発振回路1が動作
を開始し出力クロック(信号1)が計数回路2へ与えら
れる。計数回路2は発振回路1の出力クロック(信号1
)のパルスを計数し、その出力を復号回路3に与える。Next, at time 'r72, when the external control signal (signal 3) is changed from a high level to a low level, the oscillation circuit 1 starts operating and the output clock (signal 1) is applied to the counting circuit 2. The counting circuit 2 receives the output clock (signal 1) of the oscillation circuit 1.
) is counted and its output is given to the decoding circuit 3.
復号回路3は計数回路2の出力を元に復号回路3の出力
4,5.6゜7を出力同時動作が起らない時間間隔で順
次高レベルに変化させ(信号4,5.6)、スリーステ
ートバッファ9.lO及び11.12等t−順次導通状
態にしく信号7.8.9等)、半導体集積装置の外部出
力16.17と18.19等が同時に変化することのな
い様に、出力信号を出す。更に、復号回路3の出力4.
5.6.7の信号(信号4゜5.6)は−腋窩レベルに
なると、外部制御信号(信号3)が低レベルになるまで
は、そのままの状態(高レベル)を保つ構造を有し、半
導体集積装置のすべての外部出力端子に内部論理回路8
の信号が現れ、更にこれらの信号がICテスタに依って
観測されるまで、外部制御信号(信号3)は高レベルの
状態を保つ。以上の動作が終了した後、半導体集積装置
の基本クロック(信号2)7!!!:変化させ(時間T
)以上の動作を繰り返す。The decoding circuit 3 sequentially changes the outputs 4 and 5.6°7 of the decoding circuit 3 to a high level based on the output of the counting circuit 2 at time intervals in which simultaneous output operations do not occur (signals 4 and 5.6). Three-state buffer9. output signals so that the external outputs 16.17 and 18.19 of the semiconductor integrated device do not change at the same time. . Furthermore, the output 4 of the decoding circuit 3.
The signal 5.6.7 (signal 4°5.6) has a structure in which when it reaches the -axillary level, it remains in that state (high level) until the external control signal (signal 3) becomes low level. , an internal logic circuit 8 is connected to all external output terminals of the semiconductor integrated device.
The external control signal (signal 3) remains high until the signals appear and these signals are observed by the IC tester. After the above operations are completed, the basic clock (signal 2) of the semiconductor integrated device 7! ! ! : Change (time T
) Repeat the above operations.
更に、以上の動作を、試験が終了するまで行なう。Further, the above operations are repeated until the test is completed.
第3図は本発明に係る具体的実施例の回路である。一般
にシステムに半導体集積装置を組み込んだ場合には、半
導体集積の出力端子に対する負荷容量は小さく、出力同
時動作に依る誤動作が生じることは少ないので、第3図
の実施例では、外部制御信号入力端子21を設け、シス
テム上ではこの端子を開放とすることで常に第3図の回
路は動作を停止し復号回路36の出力はすべて高レベル
になシスリーステートバッファ45,46,47゜48
は導通状態となる様になっている。一方、工Cテスタで
試験を行なう場合には、外部制御信号 −入力端子21
に論理値0を印加し、更に外部制御信号入力端子22に
半導体集積装置の基本クロックと同期した172以下の
周期の信号を印加することによシ、半導体集積装置の出
力同時動作を防止できる。FIG. 3 shows a circuit of a specific embodiment according to the present invention. Generally, when a semiconductor integrated device is incorporated into a system, the load capacitance to the output terminal of the semiconductor integrated device is small, and malfunctions due to simultaneous output operations are unlikely to occur. 21, and by leaving this terminal open on the system, the circuit shown in FIG.
is in a conductive state. On the other hand, when testing is performed using the engineering C tester, the external control signal - input terminal 21
Simultaneous output operations of the semiconductor integrated device can be prevented by applying a logical value of 0 to the external control signal input terminal 22, and further applying a signal with a cycle of 172 or less synchronized with the basic clock of the semiconductor integrated device to the external control signal input terminal 22.
以上説明した様に本発明は、ICテスタの様な負荷容量
の大きい試験装置で半導体集積装置を試験する場合に、
出力同時動作に依る半導体集積装置の誤動作を従来の方
法に比べ、より確実に防止できる効果がある。As explained above, the present invention can be used when testing a semiconductor integrated device using a test device with a large load capacity such as an IC tester.
This method has the effect of more reliably preventing malfunctions of a semiconductor integrated device due to simultaneous output operations than conventional methods.
更に本発明は、半導体集積装置の内部論理回路と外部出
力端子との間には、スリーステートバッファ1個のみの
挿入で済む為に、出力信号相互の位相差が増大すること
なく、更に、半導体集積装置の規模が増大し、出力端子
数が増加しても、計数回路及び復号回路を変更するだけ
で対処できる効果がある。Furthermore, since the present invention requires only one three-state buffer to be inserted between the internal logic circuit of the semiconductor integrated device and the external output terminal, the phase difference between the output signals does not increase. Even if the scale of the integrated device increases and the number of output terminals increases, this can be dealt with simply by changing the counting circuit and decoding circuit.
第1図は本発明の実施例を示すブロック図、第2図は第
1図の動作を説明するタイムチャート、第3図は本発明
の実施例の具体的回路例を示す回路図である。FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a time chart explaining the operation of FIG. 1, and FIG. 3 is a circuit diagram showing a specific circuit example of the embodiment of the present invention.
Claims (1)
リーステートバッファとを有し、前記発振回路の出力は
前記計数回路のクロック入力、前記計数回路の出力は復
号回路の入力信号となり、前記スリーステートバッファ
は半導体集積装置に対し許容された同時動作可能な外部
出力端子数以下の個数ごとにグループ分けされ、更に同
一グループ内のスリーステートバッファの制御信号入力
端子はすべて前記復号回路の出力端子の中のある一つの
出力端子のみに接続され、前記スリーステートバッファ
は半導体集積装置の出力となるべき信号を出す回路の出
力端子と半導体集積装置の外部出力端子との間に挿入さ
れ、前記半導体集積装置の外部制御信号入力端子に印加
される信号に依って、前記発振回路は発振状態又は非発
信状態をとり、前記計数回路は初期値状態又は計数状態
をとり、更に前記復号回路は前記スリーステートバッフ
ァを非導通状態とする信号を出力する状態又は前記計数
回路からの信号を復号して前記スリーステートバッファ
へ出力する状態をとる機能を有することを特徴とする半
導体集積装置。Each has one oscillation circuit, one counting circuit, one decoding circuit, and a plurality of three-state buffers, the output of the oscillation circuit becomes a clock input of the counting circuit, the output of the counting circuit becomes an input signal of the decoding circuit, and The state buffers are grouped into groups that are less than the number of external output terminals that can operate simultaneously for the semiconductor integrated device, and all the control signal input terminals of the three-state buffers in the same group are connected to the output terminals of the decoding circuit. The three-state buffer is connected to only one output terminal in the semiconductor integrated device, and the three-state buffer is inserted between the output terminal of a circuit that outputs a signal to be output from the semiconductor integrated device and the external output terminal of the semiconductor integrated device, and Depending on the signal applied to the external control signal input terminal of the device, the oscillation circuit takes an oscillation state or a non-oscillation state, the counting circuit takes an initial value state or a counting state, and the decoding circuit takes the three-state state. A semiconductor integrated device having a function of outputting a signal that makes a buffer non-conductive or decoding a signal from the counting circuit and outputting it to the three-state buffer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20639886A JPS6362261A (en) | 1986-09-01 | 1986-09-01 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20639886A JPS6362261A (en) | 1986-09-01 | 1986-09-01 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6362261A true JPS6362261A (en) | 1988-03-18 |
Family
ID=16522694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20639886A Pending JPS6362261A (en) | 1986-09-01 | 1986-09-01 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6362261A (en) |
-
1986
- 1986-09-01 JP JP20639886A patent/JPS6362261A/en active Pending
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