JPS6357400A - Research work chamber of oatm or less - Google Patents
Research work chamber of oatm or lessInfo
- Publication number
- JPS6357400A JPS6357400A JP61201962A JP20196286A JPS6357400A JP S6357400 A JPS6357400 A JP S6357400A JP 61201962 A JP61201962 A JP 61201962A JP 20196286 A JP20196286 A JP 20196286A JP S6357400 A JPS6357400 A JP S6357400A
- Authority
- JP
- Japan
- Prior art keywords
- oatm
- less
- work chamber
- research work
- note
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000015842 Hesperis Nutrition 0.000 claims 1
- 235000012633 Iberis amara Nutrition 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Bakery Products And Manufacturing Methods Therefor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
人の命は、何物にも替えられない、尊いものである。こ
とに、着眼点を当てての上記の発明に至ったのである。[Detailed Description of the Invention] Human life is precious and cannot be replaced with anything. In particular, the above invention was achieved by focusing on this point.
それと上記2が、これに加つまず。And 2 above adds to this.
第一図以下は、事業によって、形態、構造等違うと思い
ますので略します。(注1寸法、形態、構造等自由)
1 安全弁を取付けること。(注、OATM)1 安全
点検は、確実に。
1 マイナスメーター取付けること。
1 人、出は、救命マスクにて行う。ホース(吸出)2
本取付けること。(注、1名当り。)1 装置内へ気密
箱を設置し、移動可能のこととし、空気吸、出klすこ
と。(注、バルブ等を付はパイプ配管のこと。外気は、
漏湯すること。)
1 入室の時、マスク、ホースを確実に取付けること。
(注、外気室にて)服装は、宇宙肌着す。
1 外気室(、に3−C■)ドアは、開放になるためO
ATMにすること。作業終了には、ドア締め後外気を入
れ、マスクとはずすこと。
143−4ドア内へ気密箱(注、内は2つに区切る。)
1 、%4ドアまでとす。このドアは作業開放になる
。
1 各界は、気密のこと。
1 気密小窓を造ること。
1 装置外へのポンプは、真空ポンプ使用の事。
2基以上。
1 構造は、0気圧以下に耐えられる構造とする。
1 コンプレッサー必要。(注、漏逸装置付)1 装置
は、錆びない金属とする。SUSオーステナイト系等。
1 アンカーは、確実に適当なものでとること。
1 合図等正確に。(注、シグナル)
1 各種筒数等は、自由に検討の上取付けること。
1 但し、この発明は安全な物を造る事に限る。
1 同様な全装置に使用する。
以上The figures below are omitted as the form and structure will vary depending on the business. (Note 1: Dimensions, form, structure, etc. are free) 1. Install a safety valve. (Note, OATM) 1. Be sure to conduct safety inspections. 1. Install a minus meter. 1 Person will exit wearing a life mask. Hose (suction) 2
Installing this book. (Note: per person.) 1. Install an airtight box inside the equipment, make it movable, and let air in and out. (Note: Those with valves, etc. refer to pipe piping.Outside air is
To leak hot water. ) 1. When entering the room, be sure to attach your mask and hose. (Note: In the outdoor air room) Clothes are space underwear. 1 The outside air chamber (, 3-C■) door is open, so O
Make it an ATM. When finished, close the door, let in fresh air, and remove the mask. 143-4 Airtight box into the door (Note: Separate the inside into two.) 1. Up to %4 doors. This door will be open for work. 1 All worlds are airtight. 1. Building an airtight small window. 1 Use a vacuum pump to pump outside the equipment. 2 or more units. 1. The structure shall be able to withstand pressures below 0 atmospheres. 1 Compressor required. (Note: Leakage device included) 1. The device shall be made of rust-free metal. SUS austenite type, etc. 1 Make sure to use a suitable anchor. 1. Signals etc. accurately. (Note, signal) 1. Please consider freely the number of various cylinders, etc. before installing. 1 However, this invention is limited to making safe products. 1 Use for all similar equipment. that's all
Claims (1)
研究等を行っている方式は、事故の場合危険をともなう
ので、これを地上へ降下した方が、人と経済の両方面か
ら得策と思い、上記名称の装置を発明することに到達し
たものであります。以上を特許請求の範囲とします。First of all, the current method of conducting test research using manned rockets in space is dangerous in the event of an accident, so it would be better for both people and the economy to descend to the ground. With this in mind, I came up with the invention of the device with the above name. The above is the scope of the patent claims.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61201962A JPS6357400A (en) | 1986-08-27 | 1986-08-27 | Research work chamber of oatm or less |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61201962A JPS6357400A (en) | 1986-08-27 | 1986-08-27 | Research work chamber of oatm or less |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6357400A true JPS6357400A (en) | 1988-03-12 |
Family
ID=16449648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61201962A Pending JPS6357400A (en) | 1986-08-27 | 1986-08-27 | Research work chamber of oatm or less |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6357400A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0337195A (en) * | 1989-06-20 | 1991-02-18 | Siemens Ag | Production of single-crystalline silicon carbide |
US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
US5895526A (en) * | 1995-08-07 | 1999-04-20 | Nippondenso Co., Ltd. | Process for growing single crystal |
US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
US5958132A (en) * | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55136700A (en) * | 1979-04-06 | 1980-10-24 | Mitsubishi Electric Corp | Space simulation test method |
-
1986
- 1986-08-27 JP JP61201962A patent/JPS6357400A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55136700A (en) * | 1979-04-06 | 1980-10-24 | Mitsubishi Electric Corp | Space simulation test method |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0337195A (en) * | 1989-06-20 | 1991-02-18 | Siemens Ag | Production of single-crystalline silicon carbide |
US5958132A (en) * | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
US5895526A (en) * | 1995-08-07 | 1999-04-20 | Nippondenso Co., Ltd. | Process for growing single crystal |
US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
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