JPS6355198A - Substrate for dielectric thin film device - Google Patents
Substrate for dielectric thin film deviceInfo
- Publication number
- JPS6355198A JPS6355198A JP61199244A JP19924486A JPS6355198A JP S6355198 A JPS6355198 A JP S6355198A JP 61199244 A JP61199244 A JP 61199244A JP 19924486 A JP19924486 A JP 19924486A JP S6355198 A JPS6355198 A JP S6355198A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- dielectric
- thin film
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 229910052596 spinel Inorganic materials 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 abstract description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はペロブスカイＩ・型構造酸化物の薄膜を用いた
薄膜デバイス用の基板に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a substrate for a thin film device using a thin film of a perovskie I-type structured oxide.
（従来の技術）
ＰｂＴｉ０３． ＰｂＴｉＯ３のｐｂ及びＴｉの一部を
それぞれＬａ、 Ｚｒで置換した Ｐｂ（Ｚｒ、Ｔｉ）
０３． （Ｐｂ、Ｌａ）（Ｚｒ、Ｔｉ）０３さらにはＢ
ａＴｉＯ３，５ｒＴｉ０３等のペロブスカイト型結晶構
造をとる酸化物誘電体材料はコンデンサ、圧電素子、電
気光学素子などの種々の機能デバイスに応用されている
。近年、デバイスの小型化、高集積化の要請に対応する
ために、これらの材料の薄膜化の試みがなされ、焦電型
赤外線センサ、超音波センサ光スイッチなどで薄膜を用
いたデバイスが試作されている。(Prior art) PbTi03. Pb (Zr, Ti) in which pb and Ti of PbTiO3 are partially replaced with La and Zr, respectively.
03. (Pb, La) (Zr, Ti)03 and even B
Oxide dielectric materials having a perovskite crystal structure, such as aTiO3 and 5rTi03, are applied to various functional devices such as capacitors, piezoelectric elements, and electro-optical elements. In recent years, attempts have been made to make these materials thinner in order to meet the demands for smaller devices and higher integration, and devices using thin films have been prototyped for pyroelectric infrared sensors, ultrasonic sensor optical switches, etc. ing.
これらの誘電体材料を用いたデバイスにおいて最適なデ
バイス特性およびその再現性３確保するためには単結晶
を用いることが必要である。多結、高木では粒界による
物ＦＩ！量の撹乱のため良好なデバイス特性を得ること
が難しい、このことは薄膜デバイスにおいても同じであ
り、できるだけ完全な単結晶に近い誘電体エピタキシャ
ル膜が望まれる。また、薄膜の特性を効果的に使用する
にはペロブスカイト型酸化物誘電体膜の両面に電極を形
成した構造が望ましく、したがって金属１への誘電体エ
ピタキシャル膜の形成が望ましい。In order to ensure optimal device characteristics and their reproducibility3 in devices using these dielectric materials, it is necessary to use single crystals. In Takagi and Takagi, FI is caused by grain boundaries! It is difficult to obtain good device characteristics due to the disturbance in the amount of dielectric material, and the same is true for thin film devices, so a dielectric epitaxial film that is as close to a perfect single crystal as possible is desired. Furthermore, in order to effectively utilize the characteristics of the thin film, it is desirable to have a structure in which electrodes are formed on both sides of the perovskite oxide dielectric film, and therefore it is desirable to form a dielectric epitaxial film on the metal 1.
ペロブスカイト型酸化物ＨＡ電体のエピタキシャル成長
は基板の材料と結晶方向に大きく依存し、金属」二への
エピタキシャル成長の例は少ない。Epitaxial growth of perovskite-type oxide HA electric bodies largely depends on the substrate material and crystal orientation, and there are few examples of epitaxial growth on metals.
１９８５年発行のジャパニーズ・ジャーナル・オブ・ア
プライド・フイジクス（Ｊａｐａｎｅｓｅ Ｊｏｕｒｎ
ａｌ ｏｆ＾ｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ＞２４巻サ
すリメンＩ−２４−２４８２頁〜４８４頁には（００１
）方位に配向したＰＬ脱膜上のＰｂＴｉ０□がエピタキ
シャル成長することが報告されているが、（００１）配
向のＰ［膜を得るためには（００１）ＭｇＯ単結晶基板
上にＰＬをエピタキシャル成長させる必要がある。同様
な例として、（００１）ＳｒＴｉ０３． ＜０００１）
（Ｚ −Ａ Ｑ ２０３単結晶板上にＰＬ膜をエピタキ
シャル成長し、その上にＰｂＴｉＯ３やＰＬＺＴをエピ
タキシャル成長した報告がある。Japanese Journal of Applied Physics, published in 1985.
al of＾pplied Physics>Volume 24 Sasu Rimen I-24-2482-484 (001
It has been reported that PbTi0□ is grown epitaxially on a PL film oriented in the There is. As a similar example, (001)SrTi03. <0001)
(There is a report that a PL film was epitaxially grown on a Z-A Q 203 single crystal plate, and PbTiO3 or PLZT was epitaxially grown thereon.
（発明が解決しようとする問題点）
しかし、ＭｚＯ，５ｒＴｉ０３． ａ −Ａ Ｑ ２０
３などの酸化物では大口径の単結晶基板を安価に製造す
ることは瘉めて困難である。特にＭに０は化学的安定性
に欠けており、耐酸性、耐アルカリ性がなく、また大気
中より水分、炭酸ガスなどを吸収して変質しやすく、デ
バイス製造プロセスに使用することは困難である。(Problem to be solved by the invention) However, MzO, 5rTi03. a-A Q 20
With oxides such as No. 3, it is extremely difficult to manufacture large diameter single crystal substrates at low cost. In particular, M0 lacks chemical stability, has no acid resistance or alkali resistance, and is easily deteriorated by absorbing moisture, carbon dioxide, etc. from the atmosphere, making it difficult to use in device manufacturing processes. .
本発明は上述の問題を解決し、安価でデバイス製造プロ
セス上優れた性質を有し、かつ高い機能性を有する誘電
体薄膜デバイス用基板を提供するものである。The present invention solves the above problems and provides a dielectric thin film device substrate that is inexpensive, has excellent properties in the device manufacturing process, and has high functionality.
（問題点を解決するための手段）
本発明はＳｉ単結晶上にＭｇＡ ｕ ２０４の誘電体エ
ピタキシャル膜が形成され、該誘電体股上にＰｔの金属
エピタキシャル膜が形成され、該金属膜上にペロブスカ
イト型酸化物誘電体のエピタキシャル膜が形成されてい
ることを特徴とする誘電体薄膜デバイス用基板である。(Means for Solving the Problems) The present invention comprises forming a dielectric epitaxial film of MgA u 204 on a Si single crystal, forming a Pt metal epitaxial film on the dielectric layer, and forming a perovskite epitaxial film on the metal film. The present invention is a substrate for a dielectric thin film device, characterized in that an epitaxial film of a type oxide dielectric is formed thereon.
（作用）
本発明においてＳｉ単結晶上にＨｇＡ Ｑ ２０４をエ
ピタキシャル成長する技術はすでに周知の技術であるが
、ＭｇＡ ｆ１２０４上にｐｔ、をエピタキシャル成長
した報告は従来にはなく、ＭｇＡ ＩＩ ２０４エピタ
キシヤル股上に形成されるＰｔのエピタキシャル膜は全
く新規に行なわれたものであり、しがも ＭｇＡ Ｑ
２０４は化学的に安定が耐酸性、耐水性に優れ、デバイ
ス作製プロセス上有利な材料である。ＭｇＡＱ２ｏ４は
スピネル構造で格子定数８．ｏ２、ｐｔは面心立方構造
で格子定数３．９２と異種構造であるにもががわらず、
ＰＬがＭＫＡ Ｑ ２０４上にエピタキシやル成長する
原因は明らかてはないが、結晶を構成する原子あるいは
イオンの配置の周期性が類似していることが考えられる
。(Function) Although the technique of epitaxially growing HgA Q 204 on Si single crystal in the present invention is already well known, there have been no reports of epitaxially growing PT on MgA f1204, and The Pt epitaxial film that is formed is a completely new one, and is made of MgA Q.
204 is chemically stable, has excellent acid resistance and water resistance, and is an advantageous material in the device manufacturing process. MgAQ2o4 has a spinel structure and a lattice constant of 8. Although o2 and pt have a face-centered cubic structure with a lattice constant of 3.92 and a heterogeneous structure,
The reason why PL epitaxially grows on MKA Q 204 is not clear, but it is thought that the periodicity of the arrangement of atoms or ions constituting the crystal is similar.
また、単結晶基板としてＳｉ基板を用いることにより、
良質で大口径の基板が安価に入手できるうえに熟成した
Ｓｉ半導体集積回路技術を用いることによってより高い
機能を誘電体薄膜デバイスに持たせることができ、例え
ば、シリコンＩＣと誘電体薄膜デバイスを同一チップ上
に形成しな複゛合デバイスの開発が可能となる。In addition, by using a Si substrate as a single crystal substrate,
High-quality, large-diameter substrates are available at low cost, and by using mature Si semiconductor integrated circuit technology, it is possible to provide dielectric thin film devices with even higher functionality. It becomes possible to develop composite devices that are not formed on a chip.
（実施例） 以下実施例によって説明する。(Example) This will be explained below using examples.
面方位が（００１）のＳｉ単結晶基板上にＭｇＡ Ｑ
２０４を気相成長法でエピタキシャル成長し、その上に
Ｐｌをスパッタ法で形成し、その上にＰｂＴｉＯ３を同
じくスパッタ法で形成した第１図は本実施の説明図で１
は（００１）Ｓｉ単結晶基板、２はＭ（、ＩＩ Ｑ ２
０４エピタキシャル膜、３はＰＬエピタキシ六・ル１摸
、４はＰｂＴｉ０ｑエピタキシヤル膜である。ＭｇＡ
ｕ ２０４の気相成長は本出願人がすでに提案（特願昭
５７−１３６０５１） している方法で成長した。すな
わち反応ガスとしてＭｇ（１！２．八ＩｌにＨＣＱガス
を反応させて生成したΔ１１３．ＣＯ□、ＩＩ２ガスを
用い、キャリアガスとしてＮ２ガスを用いた。Ｍ［Ａ
１！ ２０４の生成反応ハＭｇＣＱ ２”２ＡＬＣＬ３
＋４ＣＯ２”４）１２− ＪＡ Ｑ ２０４”４ＣＯ”
０）＋（４で表わされる。成長温度９５０’Ｃで成長し
、Ｘ線回折及び電子線回折で（１００）方位のＭ［ＡＬ
２０４がエピタキシャル成長していることを確認した。MgA Q on a Si single crystal substrate with (001) plane orientation
204 is epitaxially grown using a vapor phase epitaxy method, Pl is formed thereon using a sputtering method, and PbTiO3 is also formed on top of this using a sputtering method.
is a (001) Si single crystal substrate, 2 is M(, II Q 2
04 epitaxial film, 3 a PL epitaxial film, and 4 a PbTi0q epitaxial film. MgA
U204 was grown in a vapor phase by a method already proposed by the applicant (Japanese Patent Application No. 136051/1982). That is, Δ113.CO□,II2 gas produced by reacting Mg(1!2.8Il with HCQ gas) was used as the reaction gas, and N2 gas was used as the carrier gas.M[A
1! Production reaction of 204 MgCQ 2”2ALCL3
+4CO2”4)12- JA Q 204”4CO”
0)+(4.Growed at a growth temperature of 950'C, X-ray diffraction and electron diffraction revealed that M[AL
It was confirmed that 204 was grown epitaxially.
ＰＬエピタキシャル膜は高周波マグネトロンスパッタリ
ング法で作製した。ＰＬツタ−ットを用い、Ａｒガス中
で基板温度６５０’Ｃで行った。ＨｇＡ Ｑ２０４と同
様にＸ線回折と電子線回折によって（００１）方位に配
向したエピタキシャル膜であることを確認した。ＰｂＴ
ｉＯ３エピタキシャル膜も高周波マグネトロンスパッタ
法で作製した。ＰｂＯを５ｗｔχ過剰に含んだＰｂＴｉ
Ｏ３粉末をターゲ・ソトに用い、Ａｒ−０２混合ガス中
で、基板温度５００℃で行なった。Ｘ線回折と電子線回
折によって＜００１）方位に配向したエビタキャル膜で
あることを確認しな。The PL epitaxial film was produced by high frequency magnetron sputtering method. The test was carried out using a PL tester in Ar gas at a substrate temperature of 650'C. As with HgA Q204, it was confirmed by X-ray diffraction and electron beam diffraction that it was an epitaxial film oriented in the (001) direction. PbT
The iO3 epitaxial film was also produced by high frequency magnetron sputtering. PbTi containing 5wtχ excess of PbO
The test was carried out using O3 powder as a target material in an Ar-02 mixed gas at a substrate temperature of 500°C. It was confirmed by X-ray diffraction and electron diffraction that it was an Evitacal film oriented in the <001) direction.
次に、実施例１において、ＰｂＴｉＯ３の代りに（Ｐｂ
１−、Ｌａｘ）（ＺｒｙＴｉｚ）０３のいわゆるＰＣＺ
ＴＭをエピタキシャル成長した。ターゲットは（ｘ／ｙ
／ｚ）が（９／６５．／３５）の組成に５ｗＬχ過剰の
ＰｂＯを加えた粉末を用い、実施例１と同様にスパッタ
法により行った。ＰＬＺＴもＰｂＴｉＯ３と同様に、く
０口１）方位にエピタキシャル成長した膜であることを
、Ｘ線回折、電子線回折によって確認した。Next, in Example 1, (Pb
1-, Lax) (ZryTiz) 03's so-called PCZ
TM was epitaxially grown. The target is (x/y
The sputtering method was carried out in the same manner as in Example 1 using a powder having a composition in which /z) was (9/65./35) and an excess of 5 wLχ of PbO was added. It was confirmed by X-ray diffraction and electron beam diffraction that PLZT was also a film epitaxially grown in the 0-1) direction, similar to PbTiO3.
（発明の効果）
以上述べたように本発明は、Ｓｉ単結晶基板上にＰｔ、
エピタキシャル膜を形成し、その上にペロブスカイト型
酸化物誘電体エピタキシャル膜を形成したものである。(Effects of the Invention) As described above, the present invention provides Pt on a Si single crystal substrate.
An epitaxial film is formed, and a perovskite-type oxide dielectric epitaxial film is formed thereon.
Ｓｉ単結晶基板を用いることにより、大口径で良質の基
板を低価格に入手できること、及び誘電体薄膜デバイス
と５ｉｌＣとを一体（ヒできる利点を考えれば本発明の
工業的価値は大きい。The industrial value of the present invention is great considering the advantage that by using a Si single crystal substrate, a large-diameter, high-quality substrate can be obtained at a low cost, and that a dielectric thin film device and 5ilC can be integrated.
第１図は本発明による基板の製造プロセスを示す図。 １・・Ｓｉ単結晶基板 FIG. 1 is a diagram showing a manufacturing process of a substrate according to the present invention. 1.Si single crystal substrate
Claims (1)
タキシャル膜が形成され、該誘電体膜上にＰｔのエピタ
キシャル膜が形成され、該金属膜上にペロブスカイト型
構造酸化物の誘電体膜が形成されていることを特徴とす
る誘電体薄膜デバイス用基板。A dielectric epitaxial film of MgAl_2O_4 is formed on a silicon single crystal, a Pt epitaxial film is formed on the dielectric film, and a dielectric film of a perovskite structure oxide is formed on the metal film. Substrate for dielectric thin film devices with features.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199244A JPS6355198A (en) | 1986-08-25 | 1986-08-25 | Substrate for dielectric thin film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199244A JPS6355198A (en) | 1986-08-25 | 1986-08-25 | Substrate for dielectric thin film device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355198A true JPS6355198A (en) | 1988-03-09 |
| JPH053439B2 JPH053439B2 (en) | 1993-01-14 |
Family
ID=16404564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61199244A Granted JPS6355198A (en) | 1986-08-25 | 1986-08-25 | Substrate for dielectric thin film device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355198A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479188A (en) * | 1990-07-19 | 1992-03-12 | Matsushita Electric Ind Co Ltd | High-frequency heating device |
| JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
| WO2004042836A1 (en) * | 2002-11-07 | 2004-05-21 | Fujitsu Limited | Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator |
| WO2004068235A1 (en) * | 2003-01-27 | 2004-08-12 | Fujitsu Limited | Optical deflection device, and manufacturing method thereof |
| JP2008252071A (en) * | 2007-03-06 | 2008-10-16 | Fujifilm Corp | Piezoelectric device, method for manufacturing the same, and liquid discharge device |
-
1986
- 1986-08-25 JP JP61199244A patent/JPS6355198A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479188A (en) * | 1990-07-19 | 1992-03-12 | Matsushita Electric Ind Co Ltd | High-frequency heating device |
| JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
| WO2004042836A1 (en) * | 2002-11-07 | 2004-05-21 | Fujitsu Limited | Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator |
| JP2004158717A (en) * | 2002-11-07 | 2004-06-03 | Fujitsu Ltd | Thin-film laminated body, electronic device and actuator using the same, and method for manufacturing the actuator |
| WO2004068235A1 (en) * | 2003-01-27 | 2004-08-12 | Fujitsu Limited | Optical deflection device, and manufacturing method thereof |
| JPWO2004068235A1 (en) * | 2003-01-27 | 2006-05-25 | 富士通株式会社 | Optical deflection element and manufacturing method thereof |
| JP2008252071A (en) * | 2007-03-06 | 2008-10-16 | Fujifilm Corp | Piezoelectric device, method for manufacturing the same, and liquid discharge device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH053439B2 (en) | 1993-01-14 |
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