JPS6350491A - Method for plating amorphous palladium - Google Patents
Method for plating amorphous palladiumInfo
- Publication number
- JPS6350491A JPS6350491A JP19206086A JP19206086A JPS6350491A JP S6350491 A JPS6350491 A JP S6350491A JP 19206086 A JP19206086 A JP 19206086A JP 19206086 A JP19206086 A JP 19206086A JP S6350491 A JPS6350491 A JP S6350491A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- amorphous
- palladium
- film
- superior
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 33
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims description 49
- 229910052763 palladium Inorganic materials 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 7
- 238000009713 electroplating Methods 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- PTLRDCMBXHILCL-UHFFFAOYSA-M sodium arsenite Chemical compound [Na+].[O-][As]=O PTLRDCMBXHILCL-UHFFFAOYSA-M 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101100269157 Caenorhabditis elegans ads-1 gene Proteins 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、非晶質パラジウムメッキ皮膜を、室温また
は加温の湿式電解メッキにて、析出させる、非晶質パラ
ジウムメッキ方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to an amorphous palladium plating method in which an amorphous palladium plating film is deposited by wet electrolytic plating at room temperature or at a heated temperature.
従来の技術
従来のパラジウムメッキ皮膜は、結晶性パラジウムメッ
キ皮膜が一般的であるが、湿式電解メッキにより、非晶
質パラジウムメッキ皮膜を得る方法も発明されている。2. Description of the Related Art Conventional palladium plating films are generally crystalline palladium plating films, but a method of obtaining an amorphous palladium plating film by wet electrolytic plating has also been invented.
発明が解決しようとする問題点
しかし、上記した結晶性パラジウムメッキ皮膜は、結晶
構造のために、表面の平滑性に欠け、耐食性にも問題が
ある。Problems to be Solved by the Invention However, the above-mentioned crystalline palladium plating film lacks surface smoothness due to its crystal structure and also has problems in corrosion resistance.
また、湿式電解メッキにより、非晶質パラジウムメッキ
皮膜を得る方法は、電解メッキを−３０００の低温で行
うために、電析効率が低く、多量の水素を皮膜中に含み
、室温まで上昇していくうちに、皮膜の結晶化が起るな
ど、作業能率９作業管理２品質の各面で問題がある。In addition, the method of obtaining an amorphous palladium plating film by wet electrolytic plating has a low electrodeposition efficiency because the electrolytic plating is performed at a low temperature of -3000°C, and the film contains a large amount of hydrogen and the temperature rises to room temperature. Over time, crystallization of the coating occurs, causing problems in terms of work efficiency, work management, and quality.
従来より、非晶質構造をもつ単金属及び合金は、結晶構
造をもつものと比較して、物理的、化学的性質にすぐれ
ているため、新素材として注目され、液体急冷法や、ス
パッタリング法、蒸着などの方法により、非晶質の金属
皮膜を得ており、これらの方法にて、非晶質パラジウム
皮膜を得ることも可能であるが、いずれも、加工方法が
容易でなく、高価になる問題がある。Traditionally, single metals and alloys with amorphous structures have attracted attention as new materials because they have superior physical and chemical properties compared to those with crystalline structures, and are used in liquid quenching and sputtering methods. Amorphous metal coatings are obtained by methods such as , vapor deposition, etc., and it is also possible to obtain amorphous palladium coatings by these methods, but the processing methods are not easy and are expensive. There is a problem.
問題点を解決するだめの手段
この発明は、上記の問題点に鑑みてなしたものであり、
非晶質パラジウムメッキ皮膜が、ヒ素を含有するメッキ
浴を用いて、室温または加温の電解メッキにより得られ
ることを、特徴としたものである。Means for Solving the Problems This invention has been made in view of the above problems, and it is possible to form an amorphous palladium plating film by electrolytic plating at room temperature or at a temperature using a plating bath containing arsenic. It is characterized by being obtained by.
ヒ素として、亜と酸ナトリウムなどを用いるものである
。As the arsenic, sodium arsenite or the like is used.
作 用
この発明は上記の手段によるものであり、ヒ素として、
亜ヒ酸ナトリウムを用いて、以下に示す中性のＦ２ＤＴ
Ａ電解液のパラジウムメッキ浴を建浴した。Effect This invention is based on the above means, and as arsenic,
Neutral F2DT shown below using sodium arsenite
A palladium plating bath using electrolyte A was prepared.
ＥＤＴＡ−２Ｎ、２ ０．３ ｍａｔ／１
ＮＩＺ２ＳＯ８０，４ｍｏｌ／Ｌ
Ｎａ２ＡｓＯ２ｏ、ｏ １ｍＯ４／ｌ
Ｐｄ （ｅｎ） ２２＋５ｏｌｎ Ｏ，１ｍｏｔ
／１上記のメッキ浴より析出するパラジウムの反応機構
を次式に提案してみた。EDTA-2N, 2 0.3 mat/1
NIZ2SO80,4mol/L Na2AsO2o,o 1mO4/l Pd (en) 22+5oln O,1mot
/1 The reaction mechanism of palladium deposited from the above plating bath was proposed using the following equation.
ｔｌ１式
％式％
（２）式
Ａｓ０２ｓｏｌｎ ＋２Ｈ２０−Ａｓ ａｄｓ −１
−４０Ｈ−上記の（１）式あるいは（２１式で示される
ヒ素の吸着イオンが、活性サイト（Ａｌとして、パラジ
ウムの析出に関与して、亜ヒ酸ナトリウムを含むエチレ
ンジアミンパラジウムｔＵｔ錯体からのパラジウムの析
出は、次の（３）〜（５）式のように考えられる。tl1 formula % formula % (2) formula As02soln +2H20-As ads -1
-40H- The arsenic adsorbed ion represented by the above formula (1) or (21) is involved in the precipitation of palladium as an active site (Al), and the arsenic adsorbed ion shown in the above formula (1) or (21) is involved in the precipitation of palladium from the ethylenediamine palladium tUt complex containing sodium arsenite. Precipitation can be considered as shown in the following equations (3) to (5).
（３）式
％式％
（４）式
Ｐｄ”ａｄｓ −Ａｌ２ ｅ： Ｐｄ ａｄｓ
−Ａ（５）式
％式％
にてメッキを行ったところ、平滑な非晶質ノ；ラジウム
メッキ皮膜が析出した。(3) Formula % Formula % (4) Formula Pd”ads −Al2 e: Pd ads
-A (5) When plating was performed using formula %, a smooth amorphous radium plating film was deposited.
実施例２゜
パルス電解
メッキ浴温度 ２５℃
上記の３東件（ｂｌ 、 （Ｃ１、＋（１１でパルス電
解を行ったところ、平滑な非晶質パラジウムメッキ皮膜
を得ることができ、水素吸蔵量も著しく低下した。Example 2゜Pulse electrolytic plating bath temperature: 25℃ When pulse electrolysis was performed using the above three conditions (bl, (C1, +(11), a smooth amorphous palladium plating film could be obtained, and the hydrogen storage capacity was has also decreased significantly.
上記の実施例１，２より得たメッキ（ａ −ｄ ）と、
通常の市販液より得られた結晶性パラジウムメッキ（８
１を、５ＵＳ３０４材に２μの厚さでメッキし、ＯＡ！
３Ｓ試験を行ったところ、メッキ（ａ〜ｄ）は、メッキ
（ｅｌに対して、下記に示すような、良好な耐食性を示
す試験結果を得た。Plating (a-d) obtained from Examples 1 and 2 above,
Crystalline palladium plating (8
1 was plated on 5US304 material to a thickness of 2μ, and OA!
When a 3S test was conducted, the platings (a to d) obtained test results showing good corrosion resistance as shown below compared to the plating (el).
図面は、上記各メッキのＸ線回折図であり、上記の実施
例１，２によって得られた非晶質パラジウムメッキ皮膜
ｔａ＋ 、 （１）） 、 （Ｃ１、＋（１１は、いず
れも、−般的な市販のメッキ浴より得られた結晶性パラ
ジウムメッキ皮膜＋８１と比較して、（２００）面取上
の高指数面のピークが消滅して、（１１１）面がブロー
ドになり、（ａ −ｄ ）の皮膜は、非晶質構造をもっ
ている。The drawings are X-ray diffraction diagrams of each of the above-mentioned platings, and the amorphous palladium plating films ta+, (1)), (C1, +(11) are each - obtained in Examples 1 and 2 above. Compared to the crystalline palladium plating film +81 obtained from a general commercially available plating bath, the peak of the high index plane on the (200) chamfer disappears, the (111) plane becomes broad, and the (a -d) The film has an amorphous structure.
発明の詳細
な説明したように、非晶質パラジウム、メッキ皮膜を、
室温捷たは加温にて容易に得ることができ、装飾用とし
ても良好な平滑な外観全得られ、耐食性にもすぐれたメ
ッキ皮膜が得られて、装飾品などのパラジウムメッキ皮
膜として、すぐれた効果を発揮するものである。As described in detail of the invention, amorphous palladium, plated film,
It can be easily obtained by stirring or heating at room temperature, provides a smooth appearance that is good for decorative purposes, and provides a plating film with excellent corrosion resistance, making it an excellent palladium plating film for ornaments, etc. It has the following effects.
図面は、メッキ皮膜のＸ線回折図である。 特許出願人 都南金属工業株式会社 池】名 The drawing is an X-ray diffraction diagram of the plating film. Patent applicant: Tonan Metal Industry Co., Ltd. ike】name
Claims (1)
浴を用いて、室温または加温の電解メッキにより得られ
ることを特徴とした、非晶質パラジウムメッキ方法。An amorphous palladium plating method, characterized in that the amorphous palladium plating film is obtained by electrolytic plating at room temperature or with heating using a plating bath containing arsenic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19206086A JPS6350491A (en) | 1986-08-19 | 1986-08-19 | Method for plating amorphous palladium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19206086A JPS6350491A (en) | 1986-08-19 | 1986-08-19 | Method for plating amorphous palladium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6350491A true JPS6350491A (en) | 1988-03-03 |
Family
ID=16284953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19206086A Pending JPS6350491A (en) | 1986-08-19 | 1986-08-19 | Method for plating amorphous palladium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350491A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5024733A (en) * | 1989-08-29 | 1991-06-18 | At&T Bell Laboratories | Palladium alloy electroplating process |
-
1986
- 1986-08-19 JP JP19206086A patent/JPS6350491A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5024733A (en) * | 1989-08-29 | 1991-06-18 | At&T Bell Laboratories | Palladium alloy electroplating process |
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