JPS6345005A - Cutting working method of single crystal - Google Patents
Cutting working method of single crystalInfo
- Publication number
- JPS6345005A JPS6345005A JP61187800A JP18780086A JPS6345005A JP S6345005 A JPS6345005 A JP S6345005A JP 61187800 A JP61187800 A JP 61187800A JP 18780086 A JP18780086 A JP 18780086A JP S6345005 A JPS6345005 A JP S6345005A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- cut
- silicon substrate
- cutting
- working method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- 238000003776 cleavage reaction Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 238000002591 computed tomography Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005162 X-ray Laue diffraction Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Light Receiving Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
この発明は、タングステン酸カドミウムまたはタングス
テン酸亜鉛の単結晶から、放射線検出用のシンチレータ
を切り出す切断加工法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a cutting method for cutting out a scintillator for radiation detection from a single crystal of cadmium tungstate or zinc tungstate.
(従来の技術)
近年、放射線を光源としたいわゆるコンピュータ断層撮
影装置が、医療分野ばかりでなく、産業分野においても
有効な診断あるいは評価手段として用いられるようにな
ってきた。このコンピュータ断層撮影装置に用いられる
放射線検出器としては、シンチレータと光電変換器とを
組み合せたものがよく知られている。そして、画像処理
時間の短縮化や高解像度化への強い要望から、シンチレ
ータとしては、短残光性特性を有する酸化物単結晶が検
討されており、そのなかにあって、タングステン酸カド
ミウム(CdWO,)およびタングステン酸亜鉛(Zn
WO,)の単結晶は、発光効率が高く、かつ短残光性で
あり、しかも温度特性にすぐれていることから、このコ
ンピュータ断層撮影装置のシンチレータとして有望視さ
れている。(Prior Art) In recent years, so-called computed tomography apparatuses using radiation as a light source have come to be used as effective diagnostic or evaluation means not only in the medical field but also in the industrial field. As a radiation detector used in this computed tomography apparatus, a combination of a scintillator and a photoelectric converter is well known. In response to the strong demand for shorter image processing times and higher resolution, oxide single crystals with short afterglow properties are being considered as scintillators, and among these, cadmium tungstate (CdWO) ) and zinc tungstate (Zn
The single crystal of WO, ) has high luminous efficiency, short afterglow property, and excellent temperature characteristics, so it is considered promising as a scintillator for computer tomography equipment.
しかし、このCd W O4およびZnWO4単結晶は
、強いへき開性のために、所要大きさのシンチレータに
するための切断加工が困難である。ところで、従来の切
断加工方法としては、たとえば特公昭57−21157
2号公報に示されているように、へき開面(010)面
を一面として、他の切断面方位を厳密に規定した切断加
工方法がある。また、特公昭58−22’l1号公報に
は、単結晶のへき開面にガラス板などの基板を接着し、
冷却液をかけながらダイヤモンドからなる円周刃をもつ
回転円板カッターにより、基体とともに切断する方法が
示されている。However, these Cd WO 4 and ZnWO 4 single crystals are difficult to cut into scintillators of a required size due to their strong cleavability. By the way, as a conventional cutting method, for example, Japanese Patent Publication No. 57-21157
As shown in Japanese Patent No. 2, there is a cutting method in which the cleavage plane (010) is one plane and other cutting plane orientations are strictly defined. In addition, in Japanese Patent Publication No. 58-22'11, a substrate such as a glass plate is bonded to the cleavage plane of a single crystal,
A method is shown in which the substrate is cut together with a rotating disk cutter having a circumferential diamond blade while applying a coolant.
特にこの後者の方法は、短時間で切断することができ能
率的であるが、切断された単結晶の上面に多くの欠けが
発生し、欠陥となるという問題点がある。In particular, this latter method is efficient as it can cut the single crystal in a short time, but it has the problem that many chips occur on the top surface of the cut single crystal, resulting in defects.
そこで1本発明者等は、この単結晶の欠けをなくすため
に、カッターの回転数を変えたり、ガラス基板のかわり
にシリコン基板を用いて切断を試みたが、結果的には大
差なかった。しかし、単結晶をガラス基板に接着して、
これをワイヤソーで切断したところ、上記上面の欠けは
なくなった。Therefore, in order to eliminate the chipping of the single crystal, the present inventors tried changing the number of revolutions of the cutter and cutting using a silicon substrate instead of a glass substrate, but the results did not make much of a difference. However, by bonding a single crystal to a glass substrate,
When this was cut with a wire saw, the chipping on the top surface disappeared.
しかし、そのかわりに、切断された単結晶の側面、特に
ガラス基板との接着面近傍に欠けが発生した。However, instead, chipping occurred on the side surfaces of the cut single crystal, especially near the bonding surface with the glass substrate.
この欠けをなくすために、さらに単結晶をカーボン台座
に直接接着して、ワイヤソーによる切断を試みたが、上
記欠けはなくならなかった。In order to eliminate this chipping, the single crystal was further bonded directly to the carbon pedestal and an attempt was made to cut it with a wire saw, but the chipping did not disappear.
(発明が解決しようとする問題点)
上記のように、CdWO4またはZ n W 04 f
l″L結晶を機械的手段により切断加工すると、切断さ
れた単結晶の表面や側面に欠けが発生するという問題点
がある。(Problems to be Solved by the Invention) As mentioned above, CdWO4 or Z n W 04 f
When a l″L crystal is cut by mechanical means, there is a problem in that chips occur on the surface and side surfaces of the cut single crystal.
この発明は、かかる問題点を解決するためになされたも
のであり、欠けを発生しない単結晶の切断加工方法を得
ることを目的とする。The present invention was made to solve this problem, and an object of the present invention is to provide a method for cutting a single crystal that does not cause chipping.
(問題点を解決するための手段)
切断すべきCdWO,またはZnWO,の単結晶をシリ
コン基板に接着して、ワイヤソーにより単結晶とシリコ
ン基板とを単結晶側から切断し、その後この切断された
単結晶からこの単結晶に接着しているシリコン基板を除
去するようにした。(Means for solving the problem) A single crystal of CdWO or ZnWO to be cut is bonded to a silicon substrate, the single crystal and the silicon substrate are cut from the single crystal side using a wire saw, and then this cut The silicon substrate attached to the single crystal was removed from the single crystal.
(作用)
上記のように単結晶にシリコン基板を接着して、ワイヤ
ソーにより単結晶側から切断すると、欠けを発生するこ
となく単結晶を切断することができ、欠けを発生しても
、 その大きさを100−以下にすることができる。下
地にシリコン基板を用いることにより欠けがなくなる理
由は、明確でないが、単結晶の材質とシリコン基板との
機械的衝撃吸収性や熱伝達などのマツチングが考えられ
る。(Function) If a silicon substrate is bonded to a single crystal as described above and cut from the single crystal side using a wire saw, the single crystal can be cut without causing any chips, and even if chips occur, the size of the chips will be reduced. The value can be reduced to 100- or less. The reason why chipping is eliminated by using a silicon substrate as the base is not clear, but it is thought to be due to the matching of the single crystal material and the silicon substrate in terms of mechanical shock absorption and heat transfer.
(実施例)
以下、図面を参照してこの発明を実施例に基づいて説明
する。(Example) Hereinafter, the present invention will be described based on an example with reference to the drawings.
まず、 CdWO4の単結晶から3 X 3 X 2
0rrm3のシンチレータを製作する場合の切断加工方
法について述べる。First, from a single crystal of CdWO4, 3 x 3 x 2
A cutting method for manufacturing a 0rrm3 scintillator will be described.
チョクラルスキー(Czochralski)法により
育成したCdWO4の単結晶を、面方位に注意を払うこ
となく厚さ3IInの板状に切断し、し1面に示すよう
に、 この板状の単結晶(υを厚さ0.5+nnのシリ
コン基板■にワックス■で接着する。さらに、この単結
晶(1)に接着されたシリコン基板(3)の背面に、厚
さ1nn+、幅10 nuの3枚のガラス板(イ)を、
後述する切断方向と直交する方向を長手方向として、は
ぼ等間隔に接着して架台0とし、この架台■を介してガ
ラス製台座りに接着する。A single crystal of CdWO4 grown by the Czochralski method was cut into a plate shape with a thickness of 3IIn without paying attention to the plane orientation, and as shown in the first page, this plate-shaped single crystal (υ is adhered to a silicon substrate ■ having a thickness of 0.5+nn with wax ■.Furthermore, on the back of the silicon substrate (3) adhered to this single crystal (1), three pieces of glass having a thickness of 1nn+ and a width of 10 nu are attached. Board (a),
The longitudinal direction is the direction perpendicular to the cutting direction, which will be described later, and the pieces are adhered at approximately equal intervals to form a pedestal 0, which is then adhered to a glass pedestal via this pedestal .
しかるのち、太さ0,15uuのピアノ線■からなるワ
イヤソーにより、上記単結晶(1)を間隔3.2nm、
切断速度1mm/時で、カーボランダム1000番から
なる砥粒を“供給しながら、その上面側から切断し、上
記単結晶(1)をシリコン基板■とともに複数個のブロ
ック片に分割する。つぎに、この切断されたブロック片
について、溶剤によりワックス■を溶解除去して、切断
された単結晶片とシリコン鰭板片とを分離する。After that, the above single crystal (1) was cut with a spacing of 3.2 nm using a wire saw made of piano wire with a thickness of 0.15 uu.
At a cutting speed of 1 mm/hour, the single crystal (1) is cut from the top side while supplying abrasive grains made of carborundum No. 1000, and the single crystal (1) is divided into a plurality of block pieces together with the silicon substrate (2).Next, The wax (1) is dissolved and removed from the cut block pieces using a solvent to separate the cut single crystal pieces and the silicon fin plate pieces.
この方法により、単結晶片に生じた欠けは70μl以下
であり、そのままシンチレータとして十分に使用可能な
大きさであった。また、この単結晶片の切断面lこステ
ンレス刃をあてて、結晶表面に現われたへき開面がどの
表面方位とも一致していないことを確認した。この不一
致は、X線ラウェ法によるパターン像の解析からも確認
された。By this method, the amount of chipping that occurred in the single crystal piece was 70 μl or less, which was large enough to be used as a scintillator as it is. Furthermore, by applying a stainless steel blade to the cut surface of this single crystal piece, it was confirmed that the cleavage planes appearing on the crystal surface did not coincide with any surface orientation. This discrepancy was also confirmed by analysis of pattern images using the X-ray Laue method.
つぎに、 Z n W O4の単結晶から3X7X20
11I111のシンチレータを製作する場合について述
へる。Next, from the single crystal of Z n W O4, 3X7X20
The case of manufacturing a 11I111 scintillator will now be described.
−上記実施例と同様に、面方位に注意を払うことなく厚
さ3Iの板状に切断した単結晶に、同じくシリコン基板
、3枚のガラス板からなる架台を順次ワックスにより接
着し、さらに、この架台を介してガラス製台座に接着固
定する。- In the same way as in the above embodiment, a pedestal made of a silicon substrate and three glass plates is sequentially bonded with wax to a single crystal cut into a plate shape of 3I thickness without paying attention to the plane orientation, and further, It is adhesively fixed to a glass pedestal via this frame.
しかるのち、太さ0.15+nmのピアノ線からなるワ
イマソーにより、 上記単結晶を間隔7.2na+、切
断速度In11/時で、カーボランダム1200番から
なる砥粒を供給しながら、その上面側から切断し、上記
単結晶をシリコン基板とともに複数個のブロック片に分
割した。その後、この分割されたブロック片のワックス
を溶解して、切断された単結晶片からシリコン基板片を
除去した。Thereafter, the single crystal was cut from the upper surface side using a Wimasaw made of piano wire with a thickness of 0.15+ nm at a spacing of 7.2 na+ and a cutting speed of In 11/hour while supplying abrasive grains made of carborundum No. 1200. Then, the single crystal was divided into a plurality of block pieces together with the silicon substrate. Thereafter, the wax on the divided block pieces was melted, and the silicon substrate pieces were removed from the cut single crystal pieces.
この方法により、単結晶片に生じた欠けは100μm以
下であり、そのままシンチレータとして十分に使用でき
る大きさであった。また、この単結晶片の切断面にステ
ンレス刃をあてて、結晶表面に現われたへき開面がどの
表面方位とも一致していないことを確認し、さらにこの
不一致をX線ラウェ法によるパターン像の解析からも確
認した。By this method, the single crystal piece had a chip of 100 μm or less, which was large enough to be used as a scintillator as it is. In addition, by applying a stainless steel blade to the cut surface of this single crystal piece, we confirmed that the cleavage plane that appeared on the crystal surface did not coincide with any surface orientation, and further analyzed this discrepancy by analyzing the pattern image using the X-ray Laue method. It was also confirmed.
へき開性の強いタングステン酸カドミウムまたはタング
ステン酸亜鉛の単結晶をシリコン基板に接着して、ワイ
ヤソーによりその単結晶側から単結晶とシリコン基板を
切断すると、欠けがなく、またあったとしても実用上支
障のない単結晶片を容易に製作することができる。If a single crystal of cadmium tungstate or zinc tungstate, which has strong cleavability, is bonded to a silicon substrate and the single crystal and silicon substrate are cut from the single crystal side using a wire saw, there will be no chips, and even if there are, there will be no practical problems. It is possible to easily produce a single crystal piece without crystals.
図面はこの発明の一実施例を示す一部切欠斜視図である
。
(υ・・・単結晶 ■・・・シリコン基板■・
・・ワックス に)・・・ガラス板■・・・架台
0・・・ガラス製台座■・・・ピアノ線The drawing is a partially cutaway perspective view showing an embodiment of the present invention. (υ...Single crystal ■...Silicon substrate■・
・・Wax)・・Glass plate ■・・Stand 0・Glass pedestal ■・・Piano wire
Claims (1)
ン酸亜鉛の単結晶をシリコン基板に接着し、ワイヤソー
により上記単結晶とシリコン基板とを単結晶側から切断
し、その後この切断された単結晶からこの単結晶に接着
しているシリコン基板を除去することを特徴とする単結
晶の切断加工方法。A single crystal of cadmium tungstate or zinc tungstate to be cut is bonded to a silicon substrate, the single crystal and the silicon substrate are cut from the single crystal side using a wire saw, and then the cut single crystal is bonded to this single crystal. A single crystal cutting method characterized by removing a silicon substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61187800A JPS6345005A (en) | 1986-08-12 | 1986-08-12 | Cutting working method of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61187800A JPS6345005A (en) | 1986-08-12 | 1986-08-12 | Cutting working method of single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6345005A true JPS6345005A (en) | 1988-02-26 |
Family
ID=16212454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61187800A Pending JPS6345005A (en) | 1986-08-12 | 1986-08-12 | Cutting working method of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6345005A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6328027B1 (en) * | 1999-11-11 | 2001-12-11 | Cti, Inc. | Method for precision cutting of soluble scintillator materials |
-
1986
- 1986-08-12 JP JP61187800A patent/JPS6345005A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6328027B1 (en) * | 1999-11-11 | 2001-12-11 | Cti, Inc. | Method for precision cutting of soluble scintillator materials |
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