JPS6335770A - Packing plate for sputtering target - Google Patents
Packing plate for sputtering targetInfo
- Publication number
- JPS6335770A JPS6335770A JP17798186A JP17798186A JPS6335770A JP S6335770 A JPS6335770 A JP S6335770A JP 17798186 A JP17798186 A JP 17798186A JP 17798186 A JP17798186 A JP 17798186A JP S6335770 A JPS6335770 A JP S6335770A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- packing plate
- screws
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 15
- 238000012856 packing Methods 0.000 title abstract 8
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000002826 coolant Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 240000002329 Inga feuillei Species 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 239000003507 refrigerant Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
スパッタリングターゲット用バッキングプレートの構造
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a backing plate for a sputtering target.
第2図に従来のスパッタリング用ターゲットとバッキン
グプレートが、カソード本体に装着された状態の1例を
示す。第2図においては、ターゲラ)(2CM)をろう
材(202)i介してバッキングプレー)(204)に
ボンディングする。FIG. 2 shows an example of a state in which a conventional sputtering target and backing plate are attached to a cathode body. In FIG. 2, a backing plate (204) is bonded to a backing plate (204) through a brazing material (202) i.
バッキングプレートは、ネジ(203)等によりカソー
ド本体(206)に装置される。バッキングプレート裏
の空間(203)には、冷却用媒体が流れておシ、バッ
キングプレートの熱伝導を通じターゲットを冷却する。The backing plate is attached to the cathode body (206) by screws (203) or the like. A cooling medium flows in the space (203) behind the backing plate and cools the target through heat conduction of the backing plate.
しかし前述の従来技術では、ターゲット交換時に、バッ
キングプレートがカソード本体から離れるため、冷却用
媒体(多くの場合、水)が真空チャンバー内に対し開放
となる。真空チャンバーにおいては水分は多大な害をな
すために、ターゲット交換時毎には慎重な取り扱いを必
要とし、またバッキングプレートとカソード本体間のシ
ールドを充分施す必要がある。However, in the prior art described above, when the target is replaced, the backing plate separates from the cathode body, so the cooling medium (water in most cases) is exposed to the inside of the vacuum chamber. Moisture is very harmful in a vacuum chamber, so careful handling is required every time the target is replaced, and sufficient shielding between the backing plate and the cathode body is required.
また一般にバッキングプレートには、冷却媒体側から大
気圧がかかりターゲット側は高真空であるためバッキン
グプレートには大気圧に耐えうる強度が必要とされる。Further, generally, the backing plate is subjected to atmospheric pressure from the cooling medium side and the target side is in a high vacuum, so the backing plate is required to have strength that can withstand atmospheric pressure.
そのためバッキングプレートは、厚くなり、ターゲット
と合わせるとかなりの重さを有し、特にターゲットが大
量生産用に大面積となるとその重量より扱いは非常に困
難となる。Therefore, the backing plate becomes thick and has a considerable weight when combined with the target. Especially when the target has a large area for mass production, it becomes very difficult to handle due to its weight.
そこで本発明は、このような問題点を解決するもので、
その目的とするところは、スパッタリングターゲット交
換時の作業が゛簡単となるような、バッキングプレート
を提供するところにある。Therefore, the present invention aims to solve these problems.
The purpose is to provide a backing plate that makes it easier to replace sputtering targets.
本発明のスパッタリング用バッキングプレートは、
(1)冷却用媒体の接する部分とスパッタリング用ター
ゲットの接する部分の2部分より構成され(2)上記2
部分をネジ等により物理的に接合さく3)上記接合部に
低融点金属の液体を流し込むこと
を特徴とする。The backing plate for sputtering of the present invention is composed of two parts: (1) a part in contact with the cooling medium and a part in contact with the sputtering target; (2) the above two parts.
The parts are physically joined by screws or the like. 3) A liquid of a low melting point metal is poured into the joint.
本発明の上記の構成によれば、ターゲット交換時におい
ては、冷却用媒体に接する部分のバッキングプレートを
取シはずす必要はなく、冷却用媒体が真空チャンバー内
に付着する可能性はなく、取り扱いは簡単となる。また
ターゲットと接する部分のバッキングプレートは、大気
圧に耐え得る強度が必要ではなくなるため、重量が軽く
なり取り扱いが簡単となる。According to the above configuration of the present invention, when replacing the target, there is no need to remove the backing plate in contact with the cooling medium, there is no possibility that the cooling medium will adhere to the inside of the vacuum chamber, and handling is easy. It becomes easy. Additionally, the backing plate in contact with the target does not need to be strong enough to withstand atmospheric pressure, making it lighter in weight and easier to handle.
また2部分の接合部は、ネジ止めであるため熱伝導度が
低くなる。従って熱伝導度向上のため接合部に低融点金
属の液体を流し込み、改善を図った。Furthermore, since the joint between the two parts is screwed together, the thermal conductivity is low. Therefore, in order to improve thermal conductivity, a low melting point metal liquid was poured into the joint to improve thermal conductivity.
第1図は本実施例におけるスパッタリング用ターゲット
とバッキングプレートがカソード本体に装着された状態
の断面図である。 ターゲット(101)は、ろう材(
102)を介してターゲットを固定するだめのバッキン
グプレート(103)にろう付けされている。バッキン
グプレート(103)はネジ(104)により、外圧に
耐え、冷媒の熱伝導を行なうバッキングプレート(10
7)に固定されている。バッキングプレー)(103)
と(107)の接合部(103)には、本実施例におい
ては、室温において液体InGa合金を流し込み、熱伝
導度の向上を図った。バッキングプレー)(107)は
、ネジ(106)等によりカソード本体(109)に装
着される。(1,o a )には、冷却用媒体が流れて
いる。ターゲット交換時においては、ネジ(104)を
はずし、バッキングプレー)(103)より上部を交換
する。FIG. 1 is a cross-sectional view of the sputtering target and backing plate attached to the cathode body in this embodiment. The target (101) is a brazing filler metal (
102) to a backing plate (103) that fixes the target. The backing plate (103) is secured by screws (104) to withstand external pressure and conduct heat from the refrigerant.
7) is fixed. backing play) (103)
In this example, a liquid InGa alloy was poured into the joint (103) between and (107) at room temperature to improve the thermal conductivity. The backing plate (107) is attached to the cathode body (109) with screws (106) or the like. A cooling medium is flowing through (1, o a ). When replacing the target, remove the screw (104) and replace the part above the backing plate (103).
本実施例においては、 バッキングプレート(1o7)
とカソード本体(109)は、別々である必要はなく、
一体化されていても良い。In this example, backing plate (1o7)
and the cathode body (109) do not need to be separate;
It may be integrated.
以上述べたように発明1によれば、スパッタリングター
ゲット用バッキングプレートを冷却用媒体の接する部分
とスパッタリング用ターゲットの接する部分の2部分よ
シ構成し、それをネジ等にて物理的に接合して、その接
合部に低融点金属の液体を流し込むことにより、ターゲ
ット交換時に、冷却用媒体がチャンバー内に対して開放
しなくなり、かつバッキングプレート付ターゲットの重
さが従来のものより軽くなるため、取り扱いが簡単にな
るという効果を有する。As described above, according to invention 1, the sputtering target backing plate is composed of two parts, the part in contact with the cooling medium and the part in contact with the sputtering target, which are physically joined with screws or the like. By pouring a low-melting metal liquid into the joint, the cooling medium will not be released into the chamber when replacing the target, and the weight of the target with backing plate will be lighter than conventional ones, making it easier to handle. This has the effect of simplifying the process.
第1図は本発明のスパッタリング用ターゲット及びバッ
キングプレートの主要断面図。
第2図は、従来のスパッタリング用ターゲット及びバッ
キングプレートの主要断面図。
以上FIG. 1 is a main sectional view of the sputtering target and backing plate of the present invention. FIG. 2 is a main cross-sectional view of a conventional sputtering target and backing plate. that's all
Claims (3)
ゲットの接する部分の、2部分より構成されることを特
徴とするスパッタリングターゲット用バッキングプレー
ト。(1) A backing plate for a sputtering target characterized by being composed of two parts: a part in contact with a cooling medium and a part in contact with a sputtering target.
とを特徴とする特許請求範囲第1項記載のスパッタリン
グターゲット用バッキングプレート。(2) The backing plate for a sputtering target according to claim 1, wherein the two parts are physically joined by screws or the like.
特徴とする特許請求の範囲第1項記載のスパッタリング
ターゲット用バッキングプレート。(3) The backing plate for a sputtering target according to claim 1, wherein a liquid of a low melting point metal is poured into the joint portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17798186A JPS6335770A (en) | 1986-07-29 | 1986-07-29 | Packing plate for sputtering target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17798186A JPS6335770A (en) | 1986-07-29 | 1986-07-29 | Packing plate for sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6335770A true JPS6335770A (en) | 1988-02-16 |
Family
ID=16040449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17798186A Pending JPS6335770A (en) | 1986-07-29 | 1986-07-29 | Packing plate for sputtering target |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6335770A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04257630A (en) * | 1991-02-06 | 1992-09-11 | Matsushita Electric Ind Co Ltd | Water closet unit |
JPH04257631A (en) * | 1991-02-12 | 1992-09-11 | Matsushita Electric Ind Co Ltd | Water closet unit |
US5372694A (en) * | 1992-12-14 | 1994-12-13 | Leybold Aktiengesellschaft | Target for cathode sputtering |
US5421978A (en) * | 1993-01-21 | 1995-06-06 | Leybold Aktiengesellschaft | Target cooling system with trough |
US5433835A (en) * | 1993-11-24 | 1995-07-18 | Applied Materials, Inc. | Sputtering device and target with cover to hold cooling fluid |
US6199259B1 (en) | 1993-11-24 | 2001-03-13 | Applied Komatsu Technology, Inc. | Autoclave bonding of sputtering target assembly |
FR2898136A1 (en) * | 2006-03-03 | 2007-09-07 | Commissariat Energie Atomique | Process for installing and/or deinstalling a hollow/filled magnetic target on a cathode magnetron for cathodic pulverization, comprises generating a permanent magnetic field above the target for controlling a magnetron magnetic field |
-
1986
- 1986-07-29 JP JP17798186A patent/JPS6335770A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04257630A (en) * | 1991-02-06 | 1992-09-11 | Matsushita Electric Ind Co Ltd | Water closet unit |
JPH04257631A (en) * | 1991-02-12 | 1992-09-11 | Matsushita Electric Ind Co Ltd | Water closet unit |
US5372694A (en) * | 1992-12-14 | 1994-12-13 | Leybold Aktiengesellschaft | Target for cathode sputtering |
US5421978A (en) * | 1993-01-21 | 1995-06-06 | Leybold Aktiengesellschaft | Target cooling system with trough |
US5433835A (en) * | 1993-11-24 | 1995-07-18 | Applied Materials, Inc. | Sputtering device and target with cover to hold cooling fluid |
US6199259B1 (en) | 1993-11-24 | 2001-03-13 | Applied Komatsu Technology, Inc. | Autoclave bonding of sputtering target assembly |
FR2898136A1 (en) * | 2006-03-03 | 2007-09-07 | Commissariat Energie Atomique | Process for installing and/or deinstalling a hollow/filled magnetic target on a cathode magnetron for cathodic pulverization, comprises generating a permanent magnetic field above the target for controlling a magnetron magnetic field |
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