JPS63316846A - Formation of resist pattern - Google Patents
Formation of resist patternInfo
- Publication number
- JPS63316846A JPS63316846A JP15262487A JP15262487A JPS63316846A JP S63316846 A JPS63316846 A JP S63316846A JP 15262487 A JP15262487 A JP 15262487A JP 15262487 A JP15262487 A JP 15262487A JP S63316846 A JPS63316846 A JP S63316846A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- resist layer
- mask
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical class C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- -1 benzyl ether compound Chemical class 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 5
- OKVJCVWFVRATSG-UHFFFAOYSA-N 3-hydroxybenzyl alcohol Chemical compound OCC1=CC=CC(O)=C1 OKVJCVWFVRATSG-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical class OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 150000001555 benzenes Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- UKVIEHSSVKSQBA-UHFFFAOYSA-N methane;palladium Chemical compound C.[Pd] UKVIEHSSVKSQBA-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010898 silica gel chromatography Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PHSPJQZRQAJPPF-UHFFFAOYSA-N N-alpha-Methylhistamine Chemical compound CNCCC1=CN=CN1 PHSPJQZRQAJPPF-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- 229940073608 benzyl chloride Drugs 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000004683 dihydrates Chemical class 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- GEVPUGOOGXGPIO-UHFFFAOYSA-N oxalic acid;dihydrate Chemical compound O.O.OC(=O)C(O)=O GEVPUGOOGXGPIO-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 以下の順序で本発明を説明する。[Detailed description of the invention] The present invention will be explained in the following order.
A 産業上の利用分野
B 発明のm要
C従来の技術
D 発明が解決しようとする問題点
E 問題点を解決するための手段(第1図)F 作用
G 実施例
G1第1のレジスト層
G2第2のレジスト層
G3レジスト層のパターン化手順
H発明の効果
A 産業上の利用分野
本発明は、各種半導体装置の製造工程を始めとして、各
檀微細加工のマスク等として用いるレジストパターンの
形成方法に関わる。A. Industrial application field B. Essentials of the invention C. Prior art D. Problem to be solved by the invention E. Means for solving the problem (Fig. 1) F. Effect G. Example G1 First resist layer G2 Second resist layer G3 Resist layer patterning procedure H Effect of the invention A Industrial application field The present invention is directed to a method for forming a resist pattern used as a mask for various types of microfabrication, including manufacturing processes of various semiconductor devices. involved.
B 発明のm要
本発明は、表面に凹凸、すなわち段差を有する基板上に
レジストパターンを形成するに、この段差を埋込むよう
に第1のレジスト層をその表面が平坦になるように形成
し、これの上にシリコンSi含有の第2のレジスl一層
を被着し、この第2のレジスト層に対して所要のパター
ン露光を行い、現像してこれを所定のパターンして後、
特にその表面を被膜を形成する工程を経て後この第2の
レジスト層によるパターンをマスクに第1のレジスト層
を酸素プラズマ中の異方性エツチングすることによって
パターン縁部のいわゆる“切れ”のよい、すなわち高鮮
鋭なレジストパターンを形成する。B. Summary of the Invention The present invention provides a method for forming a resist pattern on a substrate having an uneven surface, that is, a step, by forming a first resist layer so as to fill the step so that the surface thereof is flat. , a single layer of a second resist containing silicon is deposited on this, the second resist layer is exposed to light in a required pattern, and developed to form a predetermined pattern.
In particular, after the process of forming a film on the surface, the first resist layer is anisotropically etched in oxygen plasma using the pattern formed by the second resist layer as a mask, so that the edge of the pattern can be easily cut. In other words, a highly sharp resist pattern is formed.
C従来の技術
IQ+密度大規模集積回路LSI等、各種半導体装置等
の製造過程で、例えば選択的ドライエツチングのレジス
ト、選択的イオン注入のレジスト等の各種目的の超微細
レジストパターンを必要とする。C. Prior Art In the manufacturing process of various semiconductor devices such as IQ+density large-scale integrated circuit LSI, ultra-fine resist patterns for various purposes are required, such as resists for selective dry etching and resists for selective ion implantation.
このレジストパターン形成に当ってその多くは、その被
着基板表面に各製造工程を経て生じた凹凸、すなわち段
差が存在している。このようにレジストの被着面に段差
が存在している場合、単に通常一般に行われている均一
の厚さのフォトレジスト層の塗布、!l光、現像工程に
よるレジストパターンの形成方法では、段差の存在によ
る塗布むら。When forming this resist pattern, most of the resist patterns have unevenness, that is, a step, formed on the surface of the substrate to be adhered through various manufacturing steps. When there are steps like this on the surface to which the resist is applied, simply apply a photoresist layer with a uniform thickness, which is commonly done! In the method of forming a resist pattern using light and a developing process, coating unevenness occurs due to the presence of steps.
露光むらによって高精度、高鮮鋭な超微細パターンを得
ることは困難である。It is difficult to obtain highly accurate and sharp ultrafine patterns due to uneven exposure.
これに対し、例えば工業調査会発行、電子材料4 、1
986.第47頁にも、その記載がある2層レジスト法
が知られている。この方法では、2種のレジスト層を積
層する構成によるものであって、下層の第1のレジスト
層によって基板表面の段差を埋めてその表面を平坦化し
、これの上にフォトレジストを塗布することによって一
様な厚さで平坦な第2のレジスト層を形成し、これに対
して所要のパターンの露光、現像処理を行ってパターン
化し、これをマスクとして下層の第1のレジストj−を
酸素プラズマ中の異方性ドライエツチング(以下02−
RIEという)によってパターン化するという2層レジ
スト法がある。この場合、上層の第2のレジスト層は、
上述したような露光、現像による光学的写真技術によっ
てパターン化するものであるが、前述したようにこの上
層の第2のレジスト層は、一様な厚さの平坦な層であり
、また薄い層として形成し得るので高精度に高鮮鋭に微
細パターンを形成することができ、これに伴ってこの第
1のレジスト層をマスクとして0z−RIEによってパ
ターン化したW42のレジスト層のパターンもまた、高
精度、高鮮鋭の微細パターンが得られるとされている。On the other hand, for example, published by Kogyo Kenkyukai, Electronic Materials 4, 1
986. A two-layer resist method is known, which is also described on page 47. This method is based on a structure in which two types of resist layers are laminated, and the steps on the substrate surface are filled with the lower first resist layer to flatten the surface, and then a photoresist is applied on top of this. A flat second resist layer with a uniform thickness is formed by the process, and the required pattern is exposed and developed to form a pattern. Using this as a mask, the first resist layer below is exposed to oxygen. Anisotropic dry etching in plasma (hereinafter referred to as 02-
There is a two-layer resist method in which patterning is performed by RIE (referred to as RIE). In this case, the upper second resist layer is
The pattern is formed by the optical photographic technique using exposure and development as described above, but as mentioned above, this upper second resist layer is a flat layer with a uniform thickness, and a thin layer. As a result, a fine pattern can be formed with high accuracy and sharpness, and accordingly, the pattern of the W42 resist layer, which is patterned by 0z-RIE using this first resist layer as a mask, also has a high precision. It is said that fine patterns with high accuracy and sharpness can be obtained.
しかしながら、この方法による場合、実際上は上層の第
2のレジスト層をマスクとして下層の第1のレジスト層
を02− RI Eする作業中に、上層の第2のレジス
ト層が侵されて超微細パターンへの通用には問題がある
。However, when using this method, in reality, during the 02-RIE operation of the lower first resist layer using the upper second resist layer as a mask, the upper second resist layer is eroded and ultra-fine particles are formed. There is a problem with its applicability to the pattern.
これに対し、上層の第2のレジスト層としてシリコンS
t含有フォトレジストを用いることが考えられる。この
Si含有レジストは、02−RI E処理中にStがS
iOx例えばS i(hに無機化され、酸素雰囲気に対
し安定となるので、これをマスクとして下層の第1のレ
ジスト層を安定に02−RIBでパターン化できると考
えられる。ところが、この場合においても、実際上、S
t金含有フォトレジスト層のSiが無機化するには、こ
のレジストr−中(7)H(水素)及びC(炭素) カ
1hO7,C(htとなって消失することによってSi
Oxが生成されることから、このSiOxの生成までに
、フォトレジスト層の幅及び厚さが減少するいわゆる股
ベリが大きく、このように下層のレジスト層に対して0
2−RIEを行っている作業中の膜ベリは、これが02
RIEの諸条件によって不安定に生じることから、
下層のレジスト層に対するパターン化のマスクとしての
機能、パターン精度が低下し、得られたレジストパター
ンの精度、パターン縁部の切れ、すなわち鮮鋭度が低下
するという問題点がある。On the other hand, silicon S is used as the upper second resist layer.
It is conceivable to use a t-containing photoresist. In this Si-containing resist, St was changed to S during the 02-RIE process.
Since iOx, for example, Si(h), is mineralized and becomes stable in an oxygen atmosphere, it is thought that the underlying first resist layer can be stably patterned by 02-RIB using this as a mask. However, in this case, Also, in practice, S
In order for the Si in the gold-containing photoresist layer to become inorganic, (7) H (hydrogen) and C (carbon) in this resist r-1h disappear as O7,C(ht) and the Si becomes inorganic.
Since Ox is generated, the width and thickness of the photoresist layer decreases by the time this SiOx is generated, so-called curvature, which is large.
2-The membrane during RIE is 02
Because it occurs unstable depending on the conditions of RIE,
There is a problem in that the function as a patterning mask for the underlying resist layer and the pattern accuracy are reduced, and the accuracy of the obtained resist pattern and the edge of the pattern are cut, that is, the sharpness is reduced.
D 発明が解決しようとする問題点
本発明は、上述したように段差を有する基板上に超微細
のレジストパターンを形成するに、上述した諸問題を回
避して高精度、高鮮鋭な超微細パターンを確実に形成で
きるようにしたレジストパターンの形成方法を提供する
。D Problems to be Solved by the Invention The present invention avoids the above-mentioned problems in forming an ultra-fine resist pattern on a substrate having steps as described above, and provides a highly accurate and sharp ultra-fine pattern. To provide a method for forming a resist pattern that can reliably form a resist pattern.
E 問題点を解決するための手段
本発明は、第1図Aにその拡大断面図を示すように、表
面(1a)に段差(2)を有する基板(11上に、表面
<1la)がほぼ平坦な第1のレジスト層(11)を形
成する工程と、この第1のレジスト1Vi(11)上に
シリコンSi含有のフォトレジストより成る第2のレジ
スト一層(12)を形成する工程と、この第2のレジス
ト層(12)をパターン露光し、現像J゛ることによっ
てパターン化する工程とを経る。E. Means for Solving the Problems The present invention, as shown in an enlarged cross-sectional view in FIG. a step of forming a flat first resist layer (11); a step of forming a second resist layer (12) made of a silicon-containing photoresist on the first resist 1Vi (11); The second resist layer (12) is subjected to pattern exposure and development to form a pattern.
そして、更に本発明においては、このパターン化された
第2のレジスト層(12)に対し、第1図Bに示すよう
にその表面自体をS iO2ないしは5tyx化する処
理工程を行って酸化シリコン被膜(13)を形成する。Further, in the present invention, this patterned second resist layer (12) is subjected to a treatment step of converting its surface itself into SiO2 or 5tyx, as shown in FIG. 1B, to form a silicon oxide film. (13) is formed.
その後第1図Cに示すようにこのパターン化された第2
のレジスト1i(12)をマスクとして第1のレジスト
層(11)を酸素プラズマ中のエツチング02RIEに
よる異方性ドライエツチングによってパターン化する工
程によって所要のレジストパターン(14)を形成する
。Then, as shown in FIG. 1C, this patterned second
Using the resist 1i (12) as a mask, a required resist pattern (14) is formed by patterning the first resist layer (11) by anisotropic dry etching using etching 02RIE in oxygen plasma.
ド 作用
本発明方法によれば、fA2のレジス141(12)を
St金含有フォトレジストによって構成し、しかも、こ
れによって下層の第1のレジストjtj(11)を02
RIEするに、先立って、予め別工程でこのパター
ン化されたSt金含有フォトレジストm(12)の表面
自体にS i02ないしはSiOxが生成された被11
R(13)を積極的に形成しておくものであり、この被
膜(13)は、これを形成するための条ヂ1を所要の条
件に設定しておくことにより、確実に所要の厚さに云い
換えれば、H20↑+ CO2↑の消失量を正確に、
つまりその膜ベリ誓を予め正確に予測してその桧厚を設
定しておくことができるので、下層の第1のレジスト層
(11)に対する02 RIEのマスクとして安定に
、商精度に形成できる。According to the method of the present invention, the resist 141 (12) of fA2 is formed of a St gold-containing photoresist, and moreover, the first resist jtj (11) of the lower layer is thereby
Prior to RIE, the patterned St gold-containing photoresist m (12) is coated with a substrate 11 on which Si02 or SiOx has been generated on the surface itself in a separate process.
R (13) is actively formed, and this film (13) can be ensured to the required thickness by setting the strip 1 to the required conditions for forming this film (13). In other words, the amount of disappearance of H20↑+ CO2↑ is accurately calculated as
In other words, since the film thickness can be set by accurately predicting the film thickness in advance, it can be stably formed as a mask for 02 RIE on the underlying first resist layer (11) with high commercial accuracy.
G 実施例
G1第1のレジストl−
基板(1)の表面の段差(2)を埋込んで例えばポジ型
L/−,;:A t、として知られる東京応化社製、製
品名ONPM800を厚さ2μ−に塗布し、200℃の
ベーキツク・を行うことによって表面が平坦化された第
1のレジスト層(11)を形成する。G Example G1 First resist l- The step (2) on the surface of the substrate (1) is filled with, for example, a positive type L/-,;:At, manufactured by Tokyo Ohka Co., Ltd., product name ONPM800, is applied thickly. A first resist layer (11) having a flattened surface is formed by coating the resist layer with a thickness of 2 .mu.m and baking at 200.degree.
G2第2のレジスト層
第1のレジストff1(11)上に、シロキサン糸ポジ
型フォトレジストより成る第2のレジスト層(12)を
0.2〜0.5μ−の厚さに塗布する。このレジスト層
(12)は、g線(波長436n曽)、1泉(365n
m ) 、すなわち通常の水銀灯による発光紫外線に高
い感度を示す新規なシリコン原子導入フェノール誘導体
−キノンジアジド化合物によって構成し得る。このレジ
ストについて説明するに、これは、一般式+11
(両式中、R1とR9は低級アルキレン基、R2゜R3
,R4・R10,R11及びRL2はH,011,CL
又はC)120H、R6−R8は低級アルキル基、R1
3はCI2又はCIh0CH2、Aはフェノール、1〜
3の置換基を有するフェノール誘導体又は
H
(R14は低級アルキレン基、RIS、 Rs6及び
Rhは低級アルキル基を表わす)を表わし、XはOより
大きくかつl以Fの数、Yは0又はl−Xを表わす)で
ボされる単位の少なくとも一方を有する重合体からなる
。G2 Second resist layer A second resist layer (12) made of siloxane thread positive type photoresist is applied to a thickness of 0.2 to 0.5 .mu.- on the first resist ff1 (11). This resist layer (12) is composed of g-line (wavelength 436n), 1st (365nm)
m), that is, a novel silicon atom-introduced phenol derivative-quinonediazide compound that exhibits high sensitivity to ultraviolet light emitted by a normal mercury lamp. To explain this resist, it has the general formula +11 (in both formulas, R1 and R9 are lower alkylene groups, R2゜R3
, R4, R10, R11 and RL2 are H, 011, CL
or C) 120H, R6-R8 is a lower alkyl group, R1
3 is CI2 or CIh0CH2, A is phenol, 1-
represents a phenol derivative having 3 substituents or H (R14 is a lower alkylene group, RIS, Rs6 and Rh represent a lower alkyl group), X is a number greater than O and 1 or more F, and Y is 0 or 1- It consists of a polymer having at least one of the units represented by X).
このレジスト材料を構成するフェノール誘導体としては
、例えば、0−lm−及びp−クレゾール、キシレノー
ル、レゾルシノール等が挙げられる。また、上記各式に
おいて、XとYとの比率は任意であるが、有機アルカリ
水溶液への現像性を考慮するとYは0.7以下が好まし
い。Examples of the phenol derivatives constituting this resist material include 0-lm- and p-cresol, xylenol, and resorcinol. Further, in each of the above formulas, the ratio of X to Y is arbitrary, but in consideration of developability in an organic alkali aqueous solution, Y is preferably 0.7 or less.
さらに、このレジストの製造方法例1〜例3について説
明する。Furthermore, examples 1 to 3 of manufacturing methods of this resist will be explained.
例1 まず式(3) で示される単量体を次の方法で合成した。Example 1 First, equation (3) The monomer shown was synthesized by the following method.
還流冷却器を取り付けた500+wl容量の三つロフラ
スコ内で、3−ヒドロキシベンジルアルコール50g
(0,4mol) 、塩化ベンジル51g (0,4m
ol)、無水炭酸カリウム110 g (0,8■oO
1及び無水アセトン200m1からなる混合物を6時間
還流して反応させた。生成したベンジルエーテル化合物
をエーテル抽出し、硫酸マグネシウムで乾燥した(収率
90%)0次にこの化合物30g (0,14sol
)を四塩化炭素に溶解し、水冷下で三臭化リン16.7
g<0.062mol)を2時間かけて滴下して反応さ
せてから、この溶液を氷水中に投入して未反応物を分解
させた。生成した臭化物は、n−ヘキサンを展開溶媒と
したシリカゲルクロマトグラフィーにより精製した(収
率60%)0次に窒素吹き込み管、還流冷却器、及び滴
下ロートをそれぞれ取り付けた500m1容量の五つロ
フラスコにマグネシウム1.93g (0,079グラ
ム原子)及び無水エーテル40m+1を入れ、水冷下、
上記臭化物20g (0,07sol )を無水エーテ
ル100■lに溶解し、約2時間かけてt丙トした。こ
の後史に2時間反応させてからジメチルクロルシラン6
.6 g (0,07sol )を滴下し、室温で一昼
夜放置後、減圧下で蒸溜精製(0,6maHg 。50 g of 3-hydroxybenzyl alcohol in a 500+ wl capacity three-necked flask equipped with a reflux condenser.
(0.4 mol), benzyl chloride 51 g (0.4 m
ol), 110 g of anhydrous potassium carbonate (0,8■oO
A mixture of 1 and 200 ml of anhydrous acetone was refluxed for 6 hours to react. The generated benzyl ether compound was extracted with ether and dried with magnesium sulfate (yield 90%).Next, 30g of this compound (0.14sol
) was dissolved in carbon tetrachloride, and 16.7% of phosphorus tribromide was dissolved under water cooling.
g<0.062 mol) was added dropwise over 2 hours to react, and then the solution was poured into ice water to decompose unreacted substances. The produced bromide was purified by silica gel chromatography using n-hexane as the developing solvent (yield 60%).Next, it was placed in a 500 ml five-loop flask each equipped with a nitrogen blowing tube, a reflux condenser, and a dropping funnel. Add 1.93 g (0,079 gram atom) of magnesium and 40 m+1 of anhydrous ether, and cool with water.
20 g (0.07 sol) of the above bromide was dissolved in 100 μl of anhydrous ether and stirred for about 2 hours. After this reaction for 2 hours, dimethylchlorosilane 6
.. 6 g (0.07 sol) was added dropwise and left to stand at room temperature overnight, followed by distillation purification under reduced pressure (0.6 maHg).
沸点140℃)した(収率60%)。(boiling point: 140°C) (yield: 60%).
次にこの蒸溜精製物5 g (0,019mol)を5
%パラジウム−カーボン触媒100mgを分散させたエ
タノール中に滴下した0滴下終了後、更に、5%パラジ
ウム−カーボン触媒20抛g及び濃塩酸を数滴加えて水
素添加を行った。得られた生成物を、n−ヘキサンを展
開溶媒とするシリカゲルクロマトグラフィーにより精製
し、上記式(3)で表わされる単量体を得た(収率=1
00%)。Next, 5 g (0,019 mol) of this distilled product was
After 100 mg of the 5% palladium-carbon catalyst was dropped into ethanol dispersed therein, 20 g of the 5% palladium-carbon catalyst and several drops of concentrated hydrochloric acid were further added to carry out hydrogenation. The obtained product was purified by silica gel chromatography using n-hexane as a developing solvent to obtain a monomer represented by the above formula (3) (yield = 1
00%).
この単量体の分析値は次の通りであった。The analytical values for this monomer were as follows.
赤外線吸収スペクトル(cm−’ ) : 3350
(−OH)、2950(CH2) 、1250.85
0、(Si (CH3)3)1050 (St −0
−Si)、
”H−NMRスペクトル(δ) ppm = 0.04
(12HSS、 (CH3)2 ) 、2.08
(4H,S。Infrared absorption spectrum (cm-'): 3350
(-OH), 2950 (CH2), 1250.85
0, (Si (CH3)3)1050 (St -0
-Si), "H-NMR spectrum (δ) ppm = 0.04
(12HSS, (CH3)2), 2.08
(4H, S.
−臭2 ) 、5.16(2H,S、−四)、6.4
〜7.4 (8H,m、ベンゼン核)(第2図参照の
こと)。-Odor 2), 5.16 (2H, S, -4), 6.4
~7.4 (8H,m, benzene nucleus) (see Figure 2).
1JC−NMRスペクトル(第3図参照のこと)。1JC-NMR spectrum (see Figure 3).
精密分子il二針算値346.1447、実測値346
.1474゜なお、上記tlLI体の合成において、3
−ヒドロキシベンジルアルコールの代わりに3−ヒドロ
キシベンジルアルコールのベンゼン核にf換alJ人し
た化合物を用いれば、この化合物に対応したIRi体が
得られる。Precision molecule IL two-point calculation value 346.1447, actual measurement value 346
.. 1474° In addition, in the synthesis of the above tlLI body, 3
If a compound obtained by replacing the benzene nucleus of 3-hydroxybenzyl alcohol with f is used instead of -hydroxybenzyl alcohol, an IRi form corresponding to this compound can be obtained.
次にシロキサン糸フェノールである上記式(3)の単量
体5.4g (0,0156seol ) 、ホルマリ
ン(37%水溶液) 1.14g、エチルセロソルブア
セテート6g及びシェラ酸二水和物27−gを100m
1容量のナス型フラスコに入れ、110℃で8時間加熱
攪拌して反応させてから反応生成物を水洗し減圧精製し
て1、主として式(4)
で示される重合体からなる本例のレジスト材料を得た。Next, 5.4 g (0,0156 seol) of the monomer of the above formula (3) which is siloxane thread phenol, 1.14 g formalin (37% aqueous solution), 6 g ethyl cellosolve acetate, and 27 g Schella acid dihydrate were added. 100m
The resist was placed in a 1-volume eggplant-shaped flask, heated and stirred at 110°C for 8 hours to react, and the reaction product was washed with water and purified under reduced pressure to obtain 1, the resist of this example mainly consisting of the polymer represented by formula (4). I got the material.
単分散ポリスチレンを標準とするゲルパーミニ−シリン
クロマト法により求めたこのレジスト材料の分子量はM
w = 5,200 、M n = 1.100であ
り、M W / M n −4,75であった。The molecular weight of this resist material was determined by gel permini-silicone chromatography using monodisperse polystyrene as a standard.
w = 5,200, M n = 1.100, and M w /M n -4,75.
例2
この場合、加熱攪拌を8時間でなく14時間行った以外
は例1と同様にしてレジスト材料を得た。Example 2 In this case, a resist material was obtained in the same manner as in Example 1, except that heating and stirring were performed for 14 hours instead of 8 hours.
例1と同様の方法で求めたこのレジスト材料の分子量は
M w = 28,300. M n = 2.200
であり、M w / M n = 12.9であった。The molecular weight of this resist material, determined in the same manner as in Example 1, was M w = 28,300. M n = 2.200
and M w /M n = 12.9.
例1及び例2で得られた重合体の分析値はいずれも次の
通りであった。The analytical values of the polymers obtained in Examples 1 and 2 were as follows.
赤外線吸収スペクトル(cm−” ) : 3300
(−OH)、2950(C112) 、1250.8
50、(Si (CH3)2 )1050 (−S
t−0−5i )、”H−NMRスペクトル(δ>
ppm : o、o4〜0.2(b r、 S −C1
13)、
6.2〜6.8 (b r、ベンゼン核)。Infrared absorption spectrum (cm-”): 3300
(-OH), 2950 (C112), 1250.8
50, (Si(CH3)2)1050 (-S
t-0-5i), “H-NMR spectrum (δ>
ppm: o, o4~0.2 (br, S-C1
13), 6.2-6.8 (br, benzene nucleus).
なお、例1及び例2において、上記式(4)の重合体の
ベンゼン核にメチロール基が導入された繰り返し単位を
有する重合体も若干生成された。In addition, in Examples 1 and 2, some polymers having a repeating unit in which a methylol group was introduced into the benzene nucleus of the polymer of formula (4) above were also produced.
なお、例1及び例2において、重合反応をアルカリ性媒
体中で行うと、上記式(4)の重合体の代わ、 りに式
の重合体が主として生成される。In addition, in Examples 1 and 2, when the polymerization reaction is carried out in an alkaline medium, the polymer of the formula (4) is mainly produced instead of the polymer of the formula (4).
例3
m−1−リメチルシリルメチルフェノール6g(0,0
33*ol) 、例1で得られた単量体である上記式(
3)のシロキサン糸フェノール5.71g (0,01
65mol )、ホルマリン3.61g(37%水溶液
)、エチルセロソルブアセテート13g及びシュウ酸二
水和物87町を100m1容量のナス型フラスコに入れ
、110℃で13時間加熱攪拌し反応させて式(5)
で示される共重合体からなる本例のレジスト材料を得た
。Example 3 6 g m-1-limethylsilylmethylphenol (0,0
33*ol), the monomer obtained in Example 1, the above formula (
3) siloxane thread phenol 5.71g (0,01
65 mol), 3.61 g of formalin (37% aqueous solution), 13 g of ethyl cellosolve acetate, and 87 mol of oxalic acid dihydrate were placed in a 100 ml eggplant-shaped flask, heated and stirred at 110°C for 13 hours, and reacted to form the formula (5 ) A resist material of this example consisting of a copolymer represented by the following was obtained.
例1と同様の方法により求めたこのレジスト材料の分子
量はM w −5,000、M n −2,000であ
り、Mw/Mn=2.5であった。The molecular weights of this resist material determined by the same method as in Example 1 were M w -5,000, M n -2,000, and Mw/Mn = 2.5.
また、この共重合体の分析値は例1の場合と同様であっ
た。Moreover, the analytical values of this copolymer were the same as in Example 1.
各別で得られた重合体の、02 RIEに対する耐性
を普通よく用いられる市販品であるマイクロポジット1
400 (シソブレー社の商品名)と比較したところ、
以Fの様な結果が得られた。The resistance of the polymers obtained in each case to 02 RIE was evaluated using Microposit 1, a commonly used commercial product.
When compared with 400 (product name of Sisobray),
The following results were obtained.
但し、エツチング条件は、酸素分圧10mm11g、
fg素流量50SCCM及びRF出力0.1M−であっ
た。However, the etching conditions are: oxygen partial pressure 10mm, 11g,
The fg elementary flow rate was 50 SCCM and the RF output was 0.1 M-.
レジスト1−(12) としては、例えば例1で得た重
合体に増感剤(キノンジアジド化合物)を15i量%添
加したもののセロソルブアセテート−キシレン溶液をさ
らにスピン塗布し、80℃で20分間乾燥させて形成し
た。For resist 1-(12), for example, a cellosolve acetate-xylene solution prepared by adding 15i% of a sensitizer (quinone diazide compound) to the polymer obtained in Example 1 was further spin-coated and dried at 80°C for 20 minutes. It was formed by
G3レジスト屓のパターン化手順
前記01及び02項で説明した基鈑(1)上に積層され
たレジスト層(11)及び(12)をパターン化する手
順は、先ず、例えば水銀灯、すなわちg線。G3 Resist Patterning Procedure The procedure for patterning the resist layers (11) and (12) laminated on the substrate (1) described in items 01 and 02 above is first performed using, for example, a mercury lamp, that is, G-ray.
i線を発光する光源を用いた縮小投影露光装置によって
、Si含有の第2のレジストm(12)をパターン露光
する。そして、このパターン露光された第2のレジスl
−jwi(12)を現像する。この現像は、第2のレジ
ストii#(12)のレジスト材が前記62項で説明し
た新規なSi導導入フェノ−基糸樹脂キノンジアジド化
合物からなるレジストである場合は、有機アルカリ現像
液の3〜5%(W1量)のTMAH水溶液によって行う
、この現像液は、例えば東京化成製のlO%TMAH水
溶液と、東京応化製NMD−3を2.38%(重量)混
合して構成し得る。The Si-containing second resist m (12) is pattern-exposed using a reduction projection exposure apparatus using a light source that emits i-line. Then, this pattern-exposed second resist l
- Develop jwi(12). When the resist material of the second resist ii# (12) is a resist made of the novel Si-conducting pheno-based resin quinone diazide compound described in the above item 62, this development is performed using an organic alkaline developer solution of This developer, which is performed using a 5% (W1 amount) TMAH aqueous solution, may be composed of, for example, a mixture of 10% TMAH aqueous solution manufactured by Tokyo Kasei Co., Ltd. and 2.38% (weight) of NMD-3 manufactured by Tokyo Ohka Co., Ltd.
次に、このように現像された、すなわちパターン化され
た第2のレジスト層(12)に、フェージッン社製のレ
ジストハードニング装置で遠紫外線の全面照射を行う、
このようにするとき、第2のレジス)#(12)の耐熱
性が向上すると共に、この第2のレジスト層(12)自
体の表面の酸素原子濃度の増加、炭素原子の減少がみら
れることによってSiOx被I!(13)の生成がなさ
れることが確認された。Next, the second resist layer (12) developed in this way, that is, patterned, is irradiated with deep ultraviolet rays over the entire surface using a resist hardening device manufactured by Fagin.
When doing this, the heat resistance of the second resist layer (12) improves, and an increase in the oxygen atom concentration and a decrease in carbon atoms on the surface of the second resist layer (12) itself are observed. By SiOx I! It was confirmed that (13) was generated.
次に、この第2のレジスト層(12)をマスクとして、
0z−RIEによって、その下litの第1のレジスト
層(11)をパターン化する。Next, using this second resist layer (12) as a mask,
The first resist layer (11) below it is patterned by 0z-RIE.
面、上述した例では、第2のレジスト層(12)を構成
するStを含むレジストとして、新規なSil#入フェ
ラフエノール系樹脂ンジアジド化合物を用いた場合であ
るが、成る場合は、他のSi含有のレジスト例えば、特
開昭61−188539号公報に開示のシロキサン系ポ
リマーによるレジストを用いることもできる。In the above example, a new Sil#-containing ferraphenol-based resin diazide compound is used as the resist containing St constituting the second resist layer (12). For example, a resist containing a siloxane polymer disclosed in JP-A-61-188539 can also be used.
H発明の効果
本発明方法によれば、第2のレジスト層(12)をSi
含有のフォトレジストによって構成し、しかも、これに
よって下層の第1のレジスト層(11)を02 RI
Eするに、先立って、予め別工程でこのパターン化され
たSi含有のフォトレジスト層(12)の表面自体にS
iOx例えばS i02が生成された被151!(13
)、を積極的に形成しておくものであり、この被膜(1
3)は、これを形成するための条件を所要の条件に設定
しておくことにより、確実に所要の厚さに云い換えれば
、)120 t 、 CO2Tの消失量を正確に、つ
まりその膜ベリ量を予め正確に予測設定しておくことが
できるので、下層の第1のレジスト層(11)に対する
02 RIEのマスクとして安定に、高精度に形成で
きる。Effects of the invention According to the method of the invention, the second resist layer (12) is made of Si.
02 RI.
In advance, S is applied to the surface of the patterned Si-containing photoresist layer (12) in a separate process.
iOx e.g. S i02 is generated 151! (13
), is actively formed, and this film (1
3), by setting the conditions for forming it to the required conditions, it is possible to ensure the required thickness (in other words, ) 120 t. Since the amount can be predicted and set accurately in advance, it can be stably and accurately formed as a mask for 02 RIE for the first resist layer (11) below.
第1図A−Cは本発明方法の工程図、第2図及び第3図
は本発明方法の第2のレジスト層の説明に供する単量体
の”H−NMRスペクトル図及び”C−NMRスペクト
ル図である。
(【)は基板、(2)は段差、(11)及び(12)は
第1及び第2のレジスト層、(13)は酸化シリコン被
検である。Figures 1A-C are process diagrams of the method of the present invention, and Figures 2 and 3 are H-NMR spectra and C-NMR of monomers used to explain the second resist layer of the method of the present invention. It is a spectrum diagram. ([) is the substrate, (2) is the step, (11) and (12) are the first and second resist layers, and (13) is the silicon oxide test object.
Claims (1)
ト層を形成する工程と、 該第1のレジスト層上にシリコン含有のフォトレジスト
による第2のレジスト層を形成する工程と、 該第2のレジスト層をパターン化するパターン露光及び
現像工程と、 該第2のレジスト層の表面に、酸化シリコン被膜を形成
する工程と、 その後上記第2のレジスト層をマスクとして上記第1の
レジスト層をO_2プラズマ中で異方性ドライエッチン
グしてパターン化する工程とを有することを特徴とする
レジストパターンの形成方法。[Claims] A step of forming a first resist layer with a substantially flat surface on a substrate having steps, and forming a second resist layer of a silicon-containing photoresist on the first resist layer. a step of patterning the second resist layer, a step of pattern exposure and development, a step of forming a silicon oxide film on the surface of the second resist layer, and then using the second resist layer as a mask. A method for forming a resist pattern, comprising the step of patterning the first resist layer by anisotropic dry etching in O_2 plasma.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15262487A JPS63316846A (en) | 1987-06-19 | 1987-06-19 | Formation of resist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15262487A JPS63316846A (en) | 1987-06-19 | 1987-06-19 | Formation of resist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63316846A true JPS63316846A (en) | 1988-12-26 |
Family
ID=15544448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15262487A Pending JPS63316846A (en) | 1987-06-19 | 1987-06-19 | Formation of resist pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63316846A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016047493A1 (en) * | 2014-09-24 | 2016-03-31 | 東京エレクトロン株式会社 | Substrate processing method, computer storage medium and substrate processing system |
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1987
- 1987-06-19 JP JP15262487A patent/JPS63316846A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016047493A1 (en) * | 2014-09-24 | 2016-03-31 | 東京エレクトロン株式会社 | Substrate processing method, computer storage medium and substrate processing system |
JP2016066681A (en) * | 2014-09-24 | 2016-04-28 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
US10418242B2 (en) | 2014-09-24 | 2019-09-17 | Tokyo Electron Limited | Substrate treatment method using a block copolymer containing a hydrophilic and a hydrophobic polymers |
US11574812B2 (en) | 2014-09-24 | 2023-02-07 | Tokyo Electron Limited | Computer storage medium to perform a substrate treatment method using a block copolymer containing a hydrophilic and hydrophobic copolymers |
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