JPS63312715A - Delay circuit - Google Patents

Delay circuit

Info

Publication number
JPS63312715A
JPS63312715A JP62147898A JP14789887A JPS63312715A JP S63312715 A JPS63312715 A JP S63312715A JP 62147898 A JP62147898 A JP 62147898A JP 14789887 A JP14789887 A JP 14789887A JP S63312715 A JPS63312715 A JP S63312715A
Authority
JP
Japan
Prior art keywords
circuit
voltage
delay
potential
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62147898A
Other languages
Japanese (ja)
Inventor
Yoji Watanabe
陽二 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62147898A priority Critical patent/JPS63312715A/en
Publication of JPS63312715A publication Critical patent/JPS63312715A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make the delay time of a delaying circuit constant without being influenced by the fluctuation of a power source voltage, temperature, etc., by comparing the potential of the node connecting a capacity and a resistance with a referring potential with a voltage comparator, and outputting a size relation. CONSTITUTION:A capacity C1 executes the discharging and charging in accordance with the input of an input signal the inverse of phi. A potential V2 at a connection node of the capacity C1 and an R1 connected to this, a referring voltage V1 obtained by voltage-dividing a power source voltage VCC with resistances R3 and R4 are compared by a voltage comparator 10, and an output phi2 is outputted based on the size relation. In such a case, since the time tauwhen the output phi2 is transferred from a low level to a high level, is specified by the capacity C1 and resistances R1, R3 and R4, the time is not influenced by the characteristic of the power source and MOS transistors 11 and 12.

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、集積回路に用いる遅延回路に関する(従来の
技術) DRAMや他の半導体集積回路において、複数個の回路
が同期的に動作する場合等、タイミング設定をする為に
各種遅延回路が用いられている。
Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to a delay circuit used in an integrated circuit (prior art) In a DRAM or other semiconductor integrated circuit, a plurality of circuits are synchronized. Various delay circuits are used to set the timing when the device operates on a regular basis.

CMOSプロセスを用いた場合、遅延回路は第7図に示
す様にインバータを複数段接続することkよプ構成でき
る。この回路では、インバータの段数、インバータ比(
funout)インバータを構成するトランジスタのデ
ィメンジョン等を調整することにより、任意の遅延時間
(τ;φ1の入力からφ2が出力されるまでの時間)が
得られる。
When a CMOS process is used, the delay circuit can be constructed by connecting inverters in multiple stages as shown in FIG. In this circuit, the number of inverter stages, the inverter ratio (
By adjusting the dimensions of the transistors constituting the inverter (funout), an arbitrary delay time (τ; the time from the input of φ1 to the output of φ2) can be obtained.

しかしながら、この種の遅延回路では次のような問題が
あった。一般に遅延回路には、■電源電圧の変動■温度
の変動■プロセスパラメータの変動、等に対し鈍感で常
に一定の遅延特性を持つことが要求される。これに対し
、従来提案されているインバータ型の遅延回路では、例
えば電源電圧が上昇すれば遅延時間は短かくなる、温度
上昇により遅延時間は長くなる、プロセスパラメータ(
■yh e Iim + Tox e C1e)変動に
より遅延時間は敏感に影響を受ける、等所望の特性を実
現するのが困難であった。
However, this type of delay circuit has the following problems. In general, delay circuits are required to be insensitive to changes in power supply voltage, temperature changes, process parameter changes, etc., and always have constant delay characteristics. In contrast, in inverter-type delay circuits that have been proposed in the past, for example, the delay time becomes shorter as the power supply voltage rises, the delay time becomes longer as the temperature rises, and the process parameters (
■yh e Iim + Tox e C1e) The delay time is sensitively affected by fluctuations, etc., making it difficult to achieve desired characteristics.

(発明が解決しようとする問題点) 以上のように、従来提案されている遅延回路では、電源
電圧、温度、プロセスパラメータ等の変動に対し、その
特性が敏感であり、所望の遅延時間を確実に得ることが
困難であった。
(Problems to be Solved by the Invention) As described above, the delay circuits proposed in the past are sensitive to fluctuations in power supply voltage, temperature, process parameters, etc., and ensure the desired delay time. was difficult to obtain.

本発明は、上記した点に鑑みなされ九もので、電源電圧
、温度、プロセスパラメータ等の変動に対し鈍感で常に
一定の遅延時間が得られる遅延回路を提供することを目
的とする。
The present invention has been made in view of the above points, and an object of the present invention is to provide a delay circuit that is insensitive to fluctuations in power supply voltage, temperature, process parameters, etc. and can always obtain a constant delay time.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) 本発明は、抵抗R1を介した容量CIの充電(放t)と
、電源電圧を分圧した参照電位ノードとの、又は抵抗島
を介した容量C意の放電(充電)とを同時に起動し、両
者の電位が反転するのを検知しその時刻を出力する手段
を設けたことを特徴とする。
(Means for Solving the Problems) The present invention provides a method for charging (discharging) the capacitor CI via the resistor R1 and connecting the capacitor CI to a reference potential node obtained by dividing the power supply voltage or via a resistor island. The present invention is characterized by providing means for starting discharging (charging) and discharging (charging) at the same time, detecting that the potentials of both are reversed, and outputting the time.

(作用) 本発明によれば、遅延時間がCB、時定数のみによって
決まる、すなわち電源電圧の変動やMOSトランジスタ
の特性のバラツキの影響を受けない遅延回路を実現でき
る。一般に集積回路のプロセスにおいて拡散層や多結晶
Si等でつくる抵抗、またMOSやPN接合でつくるコ
ンデンサは、比較的容易に狙い通りの値をもった素子を
形成することができる。更に、それらの値の温度依存性
は極小さい。従って、一定の遅延時間を持つ回路−が容
易に得られる。
(Function) According to the present invention, it is possible to realize a delay circuit in which the delay time is determined only by CB and the time constant, that is, it is not affected by fluctuations in power supply voltage or variations in characteristics of MOS transistors. In general, in the integrated circuit process, resistors made from diffusion layers, polycrystalline Si, etc., and capacitors made from MOS and PN junctions can be relatively easily formed into elements with desired values. Moreover, the temperature dependence of these values is extremely small. Therefore, a circuit with a constant delay time can be easily obtained.

(実施例) 以下、本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.

第1図は一実施例の遅延回路の概略構成を示す。FIG. 1 shows a schematic configuration of a delay circuit according to an embodiment.

図において10はコンパレータであり、その+側Vs(
1)=入。(1−e−4片) ・・・・・・・・・ (
2)と表わすことができる。ここで、出力φ8が“L”
から“H”K遷移する時刻τはノード13とノード14
の電位関係が反転するときであるからVm(τ)=V、
とおいて(11、(21式より、 voC(1”1 ”I )=”s%/ (馬+”s )
 −−(3)従って τ=(”を馬log (]+馬/
R8)・・・・・・・・・(4)で得られる。本実施例
の動作タイミング図を第2図に示す。(4)式から明ら
かなように、本実施例の回路では、電源電圧V。0やM
OSトランジスタの特性には全く影響されない遅延時間
が得られる。
In the figure, 10 is a comparator, and its + side Vs (
1)=Enter. (1-e-4 pieces) ・・・・・・・・・ (
2). Here, the output φ8 is “L”
The time τ at which “H”K transitions from node 13 to node 14
Since this is when the potential relationship of is reversed, Vm(τ)=V,
Considering (11, (from formula 21, voC(1"1"I)="s%/(horse+"s)
−−(3) Therefore, τ=(” is horselog (]+horse/
R8)......obtained by (4). FIG. 2 shows an operation timing diagram of this embodiment. As is clear from equation (4), in the circuit of this embodiment, the power supply voltage V. 0 or M
A delay time that is completely unaffected by the characteristics of the OS transistor can be obtained.

更にMOSプロセスでは、酸化購の膜厚や配線材の比抵
抗は比較的制御が容易であり、容量はMOSキャパシタ
ーのポリシリコンの面積、抵抗は拡散層あるいはポリシ
リコン等の縦横比などマスク設計時の幾何学的な寸法設
定により、任意のC,Rすなわち遅延時間τを得ること
ができる。また、温度変化による定数の変化は実使用上
無視しうる程小さい。
Furthermore, in the MOS process, it is relatively easy to control the film thickness of the oxide film and the specific resistance of the wiring material, the capacitance is determined by the area of the polysilicon of the MOS capacitor, and the resistance is determined by the aspect ratio of the diffusion layer or polysilicon, etc. during mask design. By setting the geometric dimensions of , arbitrary C and R, that is, delay time τ can be obtained. Furthermore, changes in constants due to temperature changes are so small that they can be ignored in practical use.

上述の需施例では、コンパレータの+側入力端子には電
源電圧V。0を分圧した固定電位を入力したが、その分
圧抵抗を常時流れる貫通電流が問題になる様な場合は、
この端子に一側とは逆相で動作するCR充放電回路を接
続すればよい。また、コンパレータも遅延回路が動作し
ている時間のみ活性化するようKすれば、時期時は全く
貫通電流が流れない遅延回路が得られる。その一実施例
を第3図に、動作タイミングを第4図にそれぞれ示す。
In the above-mentioned example, the power supply voltage V is applied to the + side input terminal of the comparator. If a fixed potential divided from 0 is input, but the through current that constantly flows through the voltage dividing resistor becomes a problem,
A CR charging/discharging circuit that operates in a phase opposite to that on one side may be connected to this terminal. Furthermore, if the comparator is activated only when the delay circuit is operating, a delay circuit in which no through current flows during the timing can be obtained. One embodiment is shown in FIG. 3, and the operation timing is shown in FIG. 4.

第3図において、MOSトランジスタ21〜25はカレ
ントミラー型の差動増幅器を構成しノードv1*vlの
電圧コンパレータとして動作する。
In FIG. 3, MOS transistors 21 to 25 constitute a current mirror type differential amplifier and operate as a voltage comparator for nodes v1*vl.

この回路はトランジスタ21のゲート電圧φ、Wを1L
”レベルにするとコンパレータとして動作するがそれを
“H”レベルとすることにより動作をとめ貫通電流を〜
0にすることができる。ノードv1には、鳥、C,、M
OS  )ランジスタ28.29で構成するCR充放電
回路が、またノードv、14は、ノードv1と逆相で動
作するR、、C,、MOSトランジスタ26.27で構
成するCR充放電回路が接続されている。
This circuit sets the gate voltage φ and W of the transistor 21 to 1L.
When it is set to "H" level, it operates as a comparator, but when it is set to "H" level, it stops operating and reduces the through current.
Can be set to 0. Node v1 has birds, C,, M
OS) A CR charging/discharging circuit composed of transistors 28 and 29 is connected, and a CR charging and discharging circuit composed of R, C, and MOS transistors 26, 27, which operate in opposite phase to node v1, is connected to nodes v and 14. has been done.

入力j、が”H″レベルあるときC!はMOSトランジ
スタ26によりVcc tで充電されている。またCI
はMOS)ランジスタ29により完全に放電されている
。この時コンパレータの出力4は”H#レベルである。
When input j is at “H” level, C! is charged by the MOS transistor 26 with Vcct. Also CI
is completely discharged by the transistor 29 (MOS). At this time, the output 4 of the comparator is at "H# level."

ここで1=0で入力φ、が“H”から”L#に遷移した
場合、MOS)ランジスタ27゜28のオン抵抗が瓜、
鳥よシ十分小さければノードv1およびV!の電位v1
(す、 V!(t)はそれぞれvl(t)=voo(1
−e−I)・・・・・・・・・(5)vt(1= vo
、 e−階  ・・・・・・・・・・・・・・・ +6
1と表わされる。従ってコンパレータの出力φ。が“H
#レベルから“L″レベル遷移する時刻τはv、(τ)
=V、(τ)より 関単の為 C1馬=C,R,:CRとすると(7)式よ
り τ=CR,log2 ・・・・・・・・・・・・・・・
  (8)となる。ここでも第1図の実施例と同様容量
C1抵抗凡の値を適当に設定することにより電源電圧v
oc sやMOS)ランジスタの特性の影響を全く受け
ない遅延回路が得られる。また、待11時φ、Wを“H
″レベルすることにより貫通電流を0にすることができ
る。
Here, when 1=0 and the input φ transitions from "H" to "L#", the on-resistance of the MOS transistors 27 and 28 is as follows.
If the birds are small enough, nodes v1 and V! potential v1 of
(S, V!(t) are respectively vl(t)=voo(1
-e-I)・・・・・・・・・(5)vt(1=vo
, e-floor ・・・・・・・・・・・・・・・ +6
It is expressed as 1. Therefore, the output of the comparator φ. is “H”
The time τ at which the # level transitions from the “L” level is v, (τ)
= V, since it is a kantan from (τ), if C1 horse = C, R, :CR, then from equation (7), τ = CR, log2 ・・・・・・・・・・・・・・・
(8) becomes. Here, as in the embodiment shown in FIG. 1, by appropriately setting the value of the capacitance C1 resistance, the power supply voltage v
A delay circuit that is completely unaffected by the characteristics of transistors (OCS and MOS) can be obtained. Also, at 11 o'clock φ, W is set to “H”.
By adjusting the level, the through current can be reduced to 0.

第5図は第3図の実施例において、コンバレー1時間経
過後に自動的に立ち上げ待機状窪に戻し貫通電流をしゃ
断するだめの回路の一実施例である。その動作タイミン
グを第6図に示す。この回路では、φ、の入力に対しφ
、が遅延信号となる。また36.37はヒゲを防止する
為の簡単な遅延回路であり、例えばインバータチェーン
等で構成できる。
FIG. 5 shows an embodiment of a circuit that automatically returns the converter to the start-up standby state recess after one hour has elapsed in the embodiment of FIG. 3 to cut off the through current. The operation timing is shown in FIG. In this circuit, for the input of φ,
, becomes the delayed signal. Further, 36 and 37 are simple delay circuits for preventing whiskers, and can be constructed from, for example, an inverter chain.

以上のようにして、実施例による遅延回路では電源電圧
や温度、MOSトランジスタの特性に影響されない任意
の遅延時間をもち、待機時の貫通電流が流れない回路が
実現できる。
As described above, the delay circuit according to the embodiment can have an arbitrary delay time that is not affected by the power supply voltage, temperature, or characteristics of the MOS transistor, and can realize a circuit in which no through current flows during standby.

本発明は、上記した実施例に限られるものではなく、そ
の趣旨を逸脱しない範囲で種々変形して実施することが
できる。
The present invention is not limited to the embodiments described above, and can be implemented with various modifications without departing from the spirit thereof.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、電源電圧、温度、プ
ロセスパラメータの変動に対し鈍感であり任意の時間を
設定でき、待機時に貫通電流が流れない遅延回路を提供
することができる。
As described above, according to the present invention, it is possible to provide a delay circuit that is insensitive to fluctuations in power supply voltage, temperature, and process parameters, can set an arbitrary time, and does not allow a through current to flow during standby.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の遅延回路の概略構成を示す
図、第2図はその動作タイムチャートを示す図、第3図
は、他の実施例の具体的な構成を示す図、第4図はその
動作タイミングチャートを示す図、第5図はコンパレー
タの制御回路の構成例を示す図、第6図はその動作を説
明するタイミングチャートを示す図、第7図は従来の遅
延回路の構成を示す図である。 10・・・コンパレータ、11,26.28・・・Pチ
ャネルMO8)ランジスタ(スイッチング素子)、12
.27.29・・・NチャネルMOSトランジスタ(ス
イッチング素子)、φ1・・・入力信号、φ雪、φ雪・
・・出力信号、鳥、几3・・・分圧抵抗、36.37・
・・遅延回路。 代理人 弁理士 則 近 憲 佑 同      松  山  光  之 v’cc 第1図 第  3  図 あ 第5図 第  6 図 第  7  図
FIG. 1 is a diagram showing a schematic configuration of a delay circuit according to an embodiment of the present invention, FIG. 2 is a diagram showing its operation time chart, and FIG. 3 is a diagram showing a specific configuration of another embodiment. FIG. 4 is a diagram showing its operation timing chart, FIG. 5 is a diagram showing a configuration example of the control circuit of the comparator, FIG. 6 is a diagram showing a timing chart explaining its operation, and FIG. 7 is a conventional delay circuit. FIG. 10... Comparator, 11, 26.28... P channel MO8) transistor (switching element), 12
.. 27.29...N-channel MOS transistor (switching element), φ1...Input signal, φ snow, φ snow・
...output signal, bird, 几3...divider resistance, 36.37.
...Delay circuit. Agent Patent Attorney Nori Ken Yudo Matsuyama Hikaru v'cc Figure 1 Figure 3 Figure A Figure 5 Figure 6 Figure 7

Claims (4)

【特許請求の範囲】[Claims] (1)入力信号により充電もしくは放電を開始する容量
と抵抗との直列回路と、参照電位を発生する回路と、前
記容量と抵抗の接続ノードの電位と前記参照電位とを比
較しその大小関係を出力する電圧コンパレータを有する
ことを特徴とする遅延回路。
(1) A series circuit of a capacitor and a resistor that starts charging or discharging in response to an input signal, a circuit that generates a reference potential, and a comparison between the potential of the connection node of the capacitor and the resistor and the reference potential to determine the magnitude relationship between them. A delay circuit characterized by having a voltage comparator that outputs.
(2)前記参照電位は、電源電圧を抵抗により分圧して
得るものである特許請求の範囲第1項記載の遅延回路。
(2) The delay circuit according to claim 1, wherein the reference potential is obtained by dividing the power supply voltage using resistors.
(3)前記参照電位は、前記容量と抵抗の直列回路とは
逆相で充放電する第2の容量と抵抗の直列回路の接続ノ
ードより与えるものである特許請求の範囲第1項記載の
遅延回路。
(3) The delay according to claim 1, wherein the reference potential is provided from a connection node of a second series circuit of a capacitor and a resistor, which is charged and discharged in an opposite phase to the series circuit of a capacitor and a resistor. circuit.
(4)前記電圧コンパレータは待機時貫通電流をしゃ断
し、前記入力信号により活性化され、遅延信号出力後そ
の信号により再度待機状態に戻る自己制御機能を有する
ものである特許請求の範囲第2項または第3項記載の遅
延回路。
(4) The voltage comparator has a self-control function that cuts off the through current during standby, is activated by the input signal, and returns to the standby state again by the signal after outputting the delayed signal. Or the delay circuit described in item 3.
JP62147898A 1987-06-16 1987-06-16 Delay circuit Pending JPS63312715A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62147898A JPS63312715A (en) 1987-06-16 1987-06-16 Delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62147898A JPS63312715A (en) 1987-06-16 1987-06-16 Delay circuit

Publications (1)

Publication Number Publication Date
JPS63312715A true JPS63312715A (en) 1988-12-21

Family

ID=15440642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62147898A Pending JPS63312715A (en) 1987-06-16 1987-06-16 Delay circuit

Country Status (1)

Country Link
JP (1) JPS63312715A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000036556A1 (en) * 1998-11-19 2000-06-22 Intermec Ip Corp. Charge sharing delay circuit for passive radio frequency (rf) tags
FR2977077A1 (en) * 2011-06-27 2012-12-28 Commissariat Energie Atomique DELAY GENERATOR USING PROGRAMMABLE RESISTANCE BASED ON PHASE CHANGE MATERIAL
JP2015142169A (en) * 2014-01-27 2015-08-03 富士電機株式会社 delay circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000036556A1 (en) * 1998-11-19 2000-06-22 Intermec Ip Corp. Charge sharing delay circuit for passive radio frequency (rf) tags
FR2977077A1 (en) * 2011-06-27 2012-12-28 Commissariat Energie Atomique DELAY GENERATOR USING PROGRAMMABLE RESISTANCE BASED ON PHASE CHANGE MATERIAL
EP2541770A1 (en) * 2011-06-27 2013-01-02 Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives Delay generator using a programmable resistance made of phase-change material
JP2013013081A (en) * 2011-06-27 2013-01-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Delay generator using programmable resistor based on phase-change material
US9015094B2 (en) 2011-06-27 2015-04-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Delay generator using a programmable resistor based on a phase-change material
JP2015142169A (en) * 2014-01-27 2015-08-03 富士電機株式会社 delay circuit

Similar Documents

Publication Publication Date Title
JP3752107B2 (en) Power-on reset circuit for integrated circuits
EP0379169B1 (en) Signal delay circuit using charge pump circuit
JPH11168358A (en) Oscillator free from temperature dependency
JPH0511805B2 (en)
US4479097A (en) Low voltage, low power RC oscillator circuit
JPS62149215A (en) Time constant circuit
JP4055948B2 (en) Delay circuit and semiconductor integrated circuit device
JPH0159772B2 (en)
JP3409938B2 (en) Power-on reset circuit
US5760655A (en) Stable frequency oscillator having two capacitors that are alternately charged and discharged
US6972703B1 (en) Voltage detection circuit
JPS63312715A (en) Delay circuit
JPH05206801A (en) Delay circuit
JP3408851B2 (en) Synchronous signal detection device
US9369117B2 (en) Delay circuit, oscillation circuit, and semiconductor device
JPH0620176B2 (en) Delay circuit
JPS63217820A (en) Cmos delay circuit
JPH02147828A (en) Temperature detection circuit
JPH035096B2 (en)
US6515537B2 (en) Integrated circuit current source with switched capacitor feedback
US6339345B1 (en) Semiconductor device equipped with output circuit adjusting duration of high and low levels
JP2893774B2 (en) Semiconductor integrated circuit device
JPH01126013A (en) Duty cycle converting circuit
JP2000040949A (en) Time constant circuit and timer circuit
JPS60249357A (en) Semiconductor substrate