JPS63304621A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPS63304621A JPS63304621A JP14019687A JP14019687A JPS63304621A JP S63304621 A JPS63304621 A JP S63304621A JP 14019687 A JP14019687 A JP 14019687A JP 14019687 A JP14019687 A JP 14019687A JP S63304621 A JPS63304621 A JP S63304621A
- Authority
- JP
- Japan
- Prior art keywords
- process tube
- high frequency
- tube
- semiconductor manufacturing
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 21
- 238000004140 cleaning Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ＬＳＩ製造工程中の成膜及び熱拡散層等の
半導体製造装置に関し、特にそのプロセスチューブの洗
浄に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment for film formation and thermal diffusion layers during LSI manufacturing processes, and particularly to cleaning of process tubes thereof.
第３図は従来の成膜装置を示す断面図であり、図におい
て、１は円筒形横置きプロセスチューブ、２はこのプロ
セスチューブ１のまわりに備えられているヒータユニッ
ト、３はＳｔウェハ、４はプロセスガス吸入口、５はプ
ロセスガス排出口である。FIG. 3 is a sectional view showing a conventional film forming apparatus. In the figure, 1 is a cylindrical horizontal process tube, 2 is a heater unit provided around this process tube 1, 3 is an St wafer, and 4 is a sectional view showing a conventional film forming apparatus. 5 is a process gas inlet, and 5 is a process gas outlet.
次に動作について説明する。プロセスチューブ１内にＳ
ｔウェハ３を入れ、ガス吸入口４よりガスを８人し、ヒ
ータユニット２でプロセスチューブ１内を高温に保つ。Next, the operation will be explained. S in process tube 1
Put in the wafer 3, supply gas through the gas inlet 4, and keep the inside of the process tube 1 at a high temperature with the heater unit 2.
またプロセスガス排出口５よりガスを排気し、プロセス
チューブ１のプロセスガス圧を一定にコントロールする
。これにより、プロセスチューブ１内のＳｉウェハ上に
、ポリシリコン、シリコン酸化膜及びシリコン窒化膜等
の膜が形成される。Further, gas is exhausted from the process gas outlet 5 to control the process gas pressure in the process tube 1 to be constant. As a result, films such as polysilicon, silicon oxide film, silicon nitride film, etc. are formed on the Si wafer in the process tube 1.
従来の熱拡散炉及び成膜装置は以上のように構成されて
いるので、Ｓｉウェハ３上の膜形成をくり返す度、余剰
な膜がプロセスチューブ１内壁に堆積し、ゴミ発生の原
因となる。そのため、プロセスチューブ１を定期的に装
置本体より外し、洗浄する必要があり、その間１日近く
装置が使用不可となるなどの問題があった。Since the conventional thermal diffusion furnace and film forming apparatus are configured as described above, each time film formation on the Si wafer 3 is repeated, an excess film is deposited on the inner wall of the process tube 1, causing dust generation. . Therefore, it is necessary to periodically remove the process tube 1 from the apparatus main body and clean it, which poses a problem in that the apparatus cannot be used for nearly a day during this period.
この発明は上記のような問題点を解消するためになされ
たもので、プロセスチューブを装置本体からとり外さず
に洗浄することのできる半導体製造装置を得ることを目
的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus in which the process tube can be cleaned without removing it from the apparatus main body.
この発明に係る半導体製造装置は、プロセスチューブと
ヒータユニットとの間に高周波放電用の一対の電極を設
け、プロセスチューブ内にガスプラズマを発生させ、こ
のプラズマにより、プロセスチューブ内壁の堆積物を除
去できるようにしたものである。A semiconductor manufacturing apparatus according to the present invention includes a pair of electrodes for high-frequency discharge between a process tube and a heater unit, generates gas plasma in the process tube, and uses this plasma to remove deposits on the inner wall of the process tube. It has been made possible.
この発明においては、高周波放電用電極は、ヒータユニ
ット同様、プロセスチューブを囲むように２枚で一対と
して設けられ、その一方に高周波をかけ、他方を接地す
る。そうすると、プロセスチューブ内のガスがプラズマ
となり、プロセスチューブ内の堆積物と反応し、堆積物
を気体としてプロセスチューブ外へ排気、除去する。In this invention, like the heater unit, two high-frequency discharge electrodes are provided as a pair so as to surround the process tube, one of which is applied with high frequency, and the other is grounded. Then, the gas in the process tube becomes plasma, reacts with the deposits in the process tube, and exhausts and removes the deposits as a gas out of the process tube.
以下、この発明の一実施例を図について説明する。第１
図において、１はプロセスチューブ、２はこのプロセス
チューブ１を囲むように備えられたヒータユニット、３
はＳｉウェハ、４はプロセスガス吸入口、５はプロセス
ガス排出口、６は高周波印加電極、７は高周波印加電極
６と一対をなす接地電極である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 1 is a process tube, 2 is a heater unit provided to surround the process tube 1, and 3 is a heater unit provided to surround the process tube 1.
4 is a Si wafer, 4 is a process gas inlet, 5 is a process gas outlet, 6 is a high frequency application electrode, and 7 is a ground electrode forming a pair with the high frequency application electrode 6.
次に本実施例の作用、動作について説明する。Next, the function and operation of this embodiment will be explained.
Ｓｉウェハ３上への成膜をくり返し７、ポリシリコン等
の堆積物が存在するプロセスチューブ１内に、プロセス
ガス吸入口４よりＦを含むガスを導入し、そのプロセス
チューブ１内を一定の圧力とした後、高周波印加電極６
に高周波を印加する。Film formation on the Si wafer 3 is repeated 7, and a gas containing F is introduced from the process gas inlet 4 into the process tube 1 in which deposits such as polysilicon are present, and the inside of the process tube 1 is kept at a constant pressure. After that, the high frequency application electrode 6
Apply high frequency to.
これにより、プロセスチューブ１内にガスプラズマが生
じ、プラズマ中のＦラジカルがプロセスチューブ１内壁
の堆積物と反応し、これらを気化させる。この気化した
反応物をプロセスガス排出口５より外へ排出することに
よりプロセスチューブ１内が洗浄される。As a result, gas plasma is generated within the process tube 1, and F radicals in the plasma react with deposits on the inner wall of the process tube 1 to vaporize them. The inside of the process tube 1 is cleaned by discharging this vaporized reactant to the outside from the process gas outlet 5.
なお、上記実施例では横置きのプロセスチューブを持つ
装置を示したが、このプロセスチューブは縦置きのもの
でも良い。また、プロセスチューブの材質は石英に限ら
ず金属でも良い。また、洗浄用プラズマに用いるガスと
しては、Ｆを含むガスはすべてこれに当たる。In the above embodiment, an apparatus having a horizontally placed process tube is shown, but this process tube may be vertically placed. Furthermore, the material of the process tube is not limited to quartz, but may also be metal. In addition, all gases containing F can be used as gases for cleaning plasma.
以上のように、この発明によれば、プロセスチューブの
外側に高周波印加用の一対の電極を設けたため、チュー
ブをとり外しての洗浄作業や他の部品付加によるクリー
ニング方法を用いずとも、高周波印加のみでプロセスチ
ューブ内にガスプラズマを生成でき、プロセスチューブ
の洗浄を非常に簡単にできる効果がある。As described above, according to the present invention, since a pair of electrodes for high frequency application is provided on the outside of the process tube, high frequency application can be performed without removing the tube for cleaning or adding other parts. Gas plasma can be generated in the process tube with only a single step, which has the effect of making cleaning the process tube very easy.
第１図はこの発明の一実施例による半導体製造装置の断
面図、第２図は第１図のＡ−Ａ ’断面図、第３図は従
来の半導体製造装置を示す断面図である。
図中、１はプロセスチューブ、２はヒータユニット、３
はＳｉウェハ、４はプロセスガス吸入口、５はプロセス
ガス排出口、６は高周波印加電極、７は接地電極である
。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line AA' in FIG. 1, and FIG. 3 is a sectional view of a conventional semiconductor manufacturing apparatus. In the figure, 1 is a process tube, 2 is a heater unit, and 3 is a
is a Si wafer, 4 is a process gas inlet, 5 is a process gas outlet, 6 is a high frequency application electrode, and 7 is a ground electrode. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
酸化膜、又は窒化膜の形成を行うための半導体製造装置
において、 反応室となるプロセスチューブの周りに、高周波放電を
起こすための一対の電極を設けたことを特徴とする半導
体製造装置。(1) In semiconductor manufacturing equipment for thermally diffusing impurities or forming polysilicon, silicon oxide films, or nitride films, a pair of electrodes for generating high-frequency discharge is provided around a process tube that serves as a reaction chamber. A semiconductor manufacturing device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14019687A JPS63304621A (en) | 1987-06-04 | 1987-06-04 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14019687A JPS63304621A (en) | 1987-06-04 | 1987-06-04 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63304621A true JPS63304621A (en) | 1988-12-12 |
Family
ID=15263146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14019687A Pending JPS63304621A (en) | 1987-06-04 | 1987-06-04 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63304621A (en) |
-
1987
- 1987-06-04 JP JP14019687A patent/JPS63304621A/en active Pending
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