JPS63288024A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS63288024A JPS63288024A JP12338087A JP12338087A JPS63288024A JP S63288024 A JPS63288024 A JP S63288024A JP 12338087 A JP12338087 A JP 12338087A JP 12338087 A JP12338087 A JP 12338087A JP S63288024 A JPS63288024 A JP S63288024A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- state
- plasmic
- emission intensity
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 46
- 238000001514 detection method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 244000144985 peep Species 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体製造装置に関し、特にドライエツチング
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and particularly to dry etching equipment.
［従来の技術］
従来、この種のドライエツチング装置は、エツチング作
業中において、エツチング室内の圧力。[Prior Art] Conventionally, this type of dry etching apparatus reduces the pressure inside the etching chamber during the etching operation.
ガス流Φ、高周波電圧を表示し、あらかじめ設定された
これらの値がエツチング作業中にズした場合に、エラー
メツセージを出力して警告を発するのみであり、エツチ
ング状態でのモニターに基づきこれらの値を調整する機
能は備えていなかった。It displays gas flow Φ and high frequency voltage, and if these preset values deviate during etching, it only outputs an error message and issues a warning, and changes these values based on the monitor during etching. It did not have the ability to adjust.
［発明が解決しようとする問題点１
上述した従来のドライエツチング装置はエツチング作業
中圧力、ガス流量、高周波電圧をモニターするだけでお
り、製品（半導体基板）の処理状態をモニターする機能
はなく、エツチング終了後、製品のエツチング表面を顕
微鏡で見て判断しており、作業中に製品の異常処理状態
を検知することができないという欠点がある。[Problem to be Solved by the Invention 1] The conventional dry etching apparatus described above only monitors the pressure, gas flow rate, and high frequency voltage during the etching process, and does not have a function to monitor the processing state of the product (semiconductor substrate). After etching is completed, the etched surface of the product is judged using a microscope, and there is a drawback in that it is not possible to detect abnormal processing conditions of the product during the process.
本発明の目的は作業中に製品の異常処理状態を検知する
ことができるドライエツチング装置を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching apparatus capable of detecting abnormal processing conditions of a product during operation.
Ｅ問題点を解決するための手段］
本発明はエツチング室内でのプラズマ発光強度を検知す
るプラズマ発光強度検知部と、該プラズマ発光強度検知
部よりのデータを最適エツチング状態のデータと比較分
析するプラズマ発光強度分折部と該プラズマ発光強度分
析部よりの出力に基づき、前記エツチング室内の圧力、
ガス流量、高周波電圧等を制御する指令を発する制御部
とを有することを特徴とするドライエツチング装置であ
る。Means for Solving Problem E] The present invention provides a plasma emission intensity detection unit that detects plasma emission intensity in an etching chamber, and a plasma emission intensity detection unit that compares and analyzes data from the plasma emission intensity detection unit with data of an optimum etching state. Based on the outputs from the emission intensity analysis section and the plasma emission intensity analysis section, the pressure inside the etching chamber,
The dry etching apparatus is characterized in that it has a control section that issues commands to control gas flow rate, high frequency voltage, etc.
し実施例］ 以下、本発明の一実施例を図により説明する。Examples] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図において、エツチング室１には上部電極（陰極）
６と半導体基板テーブル（陽極）５とを向き合せて設置
し、また該エツチング室１に真空ボ゛ンブ３とガス流量
制御部２とを接続し、またテーブル５に高周波電源４を
接続しである。この構成は従来と同一である。In Fig. 1, the etching chamber 1 has an upper electrode (cathode).
6 and a semiconductor substrate table (anode) 5 are placed facing each other, a vacuum tube 3 and a gas flow rate controller 2 are connected to the etching chamber 1, and a high frequency power source 4 is connected to the table 5. be. This configuration is the same as the conventional one.
本発明は、エツチング室１の側壁に開口したのぞき窓８
と、のぞき窓８を介してエツチング室１内でのプラズマ
発光強度を検知するプラズマ発光強度検知部９と、プラ
ズマ発光強度検知部９よりのデータを最適エツチング状
態のデータと比較分析するプラズマ発光強度分析部１０
と、プラズマ発光強度分析部１０よりの出力に基づき、
エツチング室１内の圧力、ガス流量、高周波電圧等を制
御する指令を発する制御部１１とを備えたものである。The present invention provides a viewing window 8 opened in the side wall of the etching chamber 1.
, a plasma emission intensity detection section 9 that detects the plasma emission intensity in the etching chamber 1 through the observation window 8, and a plasma emission intensity detection section 9 that compares and analyzes the data from the plasma emission intensity detection section 9 with the data of the optimum etching state. Analysis section 10
Based on the output from the plasma emission intensity analysis section 10,
It is equipped with a control section 11 that issues commands to control the pressure, gas flow rate, high frequency voltage, etc. in the etching chamber 1.
実施例において、エツチング室１内にガス流量制御部２
よりガスを供給しながら、真空ポンプ３でエツチング室
］内を真空に保ち、この状態で、高周波型ｍ４より高周
波電圧を半導体基板テーブル５（陽極）、上部電極６（
陰極）間に印加し、この間のガスをプラズマ化し、半導
体基板７表面をエツチングする。このエツチング作業中
、エツチング室外部に設けられたのぞき窓８を介してプ
ラズマ発光強度検知部９によりエツチング室１内でのプ
ラズマ発光強度を検知し、プラズマ発光強度分析部１０
において検知部９のデータを分析し、最適エツチング状
態と比較して、制御部１１にて、エツチング室１内が最
適エツチング状態となるように真空ポンプ３．高周波電
源４．ガス流量制御部２にコントロール信号１２を送り
コントロールする。In the embodiment, a gas flow rate controller 2 is provided in the etching chamber 1.
While supplying more gas, the inside of the etching chamber is kept in a vacuum using the vacuum pump 3, and in this state, a high frequency voltage is applied from the high frequency type m4 to the semiconductor substrate table 5 (anode) and the upper electrode 6 (
The gas is applied between the cathodes and the gas between them is turned into plasma, and the surface of the semiconductor substrate 7 is etched. During this etching work, the plasma emission intensity inside the etching chamber 1 is detected by the plasma emission intensity detection section 9 through the observation window 8 provided outside the etching chamber, and the plasma emission intensity analysis section 10 detects the plasma emission intensity inside the etching chamber 1.
The data from the detection unit 9 is analyzed and compared with the optimum etching state, and the control unit 11 operates the vacuum pump 3. so that the inside of the etching chamber 1 is in the optimum etching state. High frequency power supply 4. A control signal 12 is sent to the gas flow rate control section 2 for control.
［発明の効果］
以上説明したように本発明によれば、エツチング作業中
、常にプラズマ発光強度を検知し分析を行うことにより
、最適なエツチング状態となるように条件（圧力、ガス
流量、高周波電圧）をコントロールでき、よって最適な
エツチングができる。[Effects of the Invention] As explained above, according to the present invention, the plasma emission intensity is constantly detected and analyzed during the etching process, and the conditions (pressure, gas flow rate, high frequency voltage, ) can be controlled, allowing optimal etching.
また、エンドポイント（エツチング終了点）で、プラズ
マ発光強度が変化するのを利用すれば、エツチング終了
時間も自動的に検知し、作業を終了させることもできる
。さらに、エツチング作業中、エツチング室内のリーク
もプラズマ発光強度の違いから検知することができると
いう効果を有するものである。Further, by utilizing the change in plasma emission intensity at the end point (etching end point), the etching end time can be automatically detected and the work can be ended. Furthermore, during the etching operation, leakage within the etching chamber can be detected from the difference in plasma emission intensity.
第１図は本発明の一実施例の模式的構成図である。
１・・・エツチング室、 ２・・・ガス流量６１１１１
１部。
３・・・真空ポンプ、 ４・・・高周波電源、 ５・・
・半導体基板テーブル、 ６・・・上部電極（陰極）。FIG. 1 is a schematic diagram of an embodiment of the present invention. 1... Etching chamber, 2... Gas flow rate 61111
Part 1. 3... Vacuum pump, 4... High frequency power supply, 5...
- Semiconductor substrate table, 6... upper electrode (cathode).
Claims (1)
プラズマ発光強度検知部と、該プラズマ発光強度検知部
よりのデータを最適エッチング状態のデータと比較分析
するプラズマ発光強度分析部と該プラズマ発光強度分析
部よりの出力に基づき、前記エッチング室内の圧力、ガ
ス流量、高周波電圧等を制御する指令を発する制御部と
を有することを特徴とするドライエッチング装置。(1) A plasma emission intensity detection section that detects the plasma emission intensity in the etching chamber, a plasma emission intensity analysis section that compares and analyzes the data from the plasma emission intensity detection section with data of the optimum etching state, and the plasma emission intensity analysis section. A dry etching apparatus comprising: a control section that issues commands to control the pressure, gas flow rate, high frequency voltage, etc. in the etching chamber based on the output from the etching chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12338087A JPS63288024A (en) | 1987-05-20 | 1987-05-20 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12338087A JPS63288024A (en) | 1987-05-20 | 1987-05-20 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63288024A true JPS63288024A (en) | 1988-11-25 |
Family
ID=14859148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12338087A Pending JPS63288024A (en) | 1987-05-20 | 1987-05-20 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63288024A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242532A (en) * | 1992-03-20 | 1993-09-07 | Vlsi Technology, Inc. | Dual mode plasma etching system and method of plasma endpoint detection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245116A (en) * | 1985-08-23 | 1987-02-27 | Hitachi Ltd | Etching method |
| JPS62273730A (en) * | 1986-05-21 | 1987-11-27 | Canon Inc | Plasma etching and apparatus therefor |
-
1987
- 1987-05-20 JP JP12338087A patent/JPS63288024A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245116A (en) * | 1985-08-23 | 1987-02-27 | Hitachi Ltd | Etching method |
| JPS62273730A (en) * | 1986-05-21 | 1987-11-27 | Canon Inc | Plasma etching and apparatus therefor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242532A (en) * | 1992-03-20 | 1993-09-07 | Vlsi Technology, Inc. | Dual mode plasma etching system and method of plasma endpoint detection |
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