JPS63281456A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS63281456A JPS63281456A JP62116089A JP11608987A JPS63281456A JP S63281456 A JPS63281456 A JP S63281456A JP 62116089 A JP62116089 A JP 62116089A JP 11608987 A JP11608987 A JP 11608987A JP S63281456 A JPS63281456 A JP S63281456A
- Authority
- JP
- Japan
- Prior art keywords
- films
- film
- electrode
- formed
- gt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
Abstract
PURPOSE:To simplify the manufacturing process of a semiconductor integrated circuit device by composing a base leading-out electrode for a bipolar transistor and a gate electrode for a MOSFET of the same conductor film formed by the same manufacturing process. CONSTITUTION:A base leading-out electrode 8 for a bipolar transistor Q1 extending on a field insulating film 7 is connected to a p<+> type external base region 11 formed into an n-well 5a by the diffusion of a p-type impurity from a p<+> type polycrystalline silicon film 9. A side wall 12 (a spacer) consisting of an insulator such as SiO2 is shaped onto the side face of the electrode 8 and an insulating film 13 such as an SiO2 film onto the side wall 12. On the other hand, insulating films 18 such as the SiO2 film are formed onto the surfaces of an n-well 5b and a p-well 6b in a section surrounded by the field insulating film 7, gate electrodes 19, 20 composed of films such as n<+> type polycrystalline silicon films 9 in Q2, Q3 as MOSFETs on the insulating films 18 and high melting-point metallic silicide films 10 on the films 9 are shaped at the same time as said electrode 8, and side walls 12 and insulating films 13 are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62116089A JPS63281456A (en) | 1987-05-13 | 1987-05-13 | Semiconductor integrated circuit device and manufacture thereof |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62116089A JPS63281456A (en) | 1987-05-13 | 1987-05-13 | Semiconductor integrated circuit device and manufacture thereof |
KR88005129A KR0120196B1 (en) | 1987-05-13 | 1988-05-03 | Semiconductor integrated circuit device and fabrication method |
US07/526,696 US5057894A (en) | 1987-05-13 | 1990-05-23 | Semiconductor integrated circuit device |
US07/964,824 US5354699A (en) | 1987-05-13 | 1992-10-22 | Method of manufacturing semiconductor integrated circuit device |
KR93004401A KR970003898B1 (en) | 1987-05-13 | 1993-03-22 | Method of manufacturing a semiconductor integrated circuit device |
US08/272,312 US5512497A (en) | 1987-05-13 | 1994-07-08 | Method of manufacturing a semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63281456A true JPS63281456A (en) | 1988-11-17 |
Family
ID=14678437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62116089A Pending JPS63281456A (en) | 1987-05-13 | 1987-05-13 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63281456A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03145759A (en) * | 1989-10-19 | 1991-06-20 | Internatl Business Mach Corp <Ibm> | Method for manufacturing semiconductor device |
US5100815A (en) * | 1989-12-27 | 1992-03-31 | Oki Electric Industry Co., Ltd. | Fabrication method for bimos semiconductor devices with improved speed and reliability |
JPH07176639A (en) * | 1993-12-17 | 1995-07-14 | Nec Corp | Semiconductor integrated circuit device and fabrication thereof |
EP0746032A2 (en) | 1995-05-29 | 1996-12-04 | Matsushita Electronics Corporation | Semiconductor integrated circuit comprising bipolar transistors and MOS transistors and associated fabrication method |
US6001676A (en) * | 1995-05-29 | 1999-12-14 | Matsushita Electronics Corporation | Semiconductor integrated circuit apparatus and associated fabrication |
US6156595A (en) * | 1997-10-08 | 2000-12-05 | Sawada; Shigeki | Method of fabricating a Bi-CMOS IC device including a self-alignment bipolar transistor capable of high speed operation |
US6281060B1 (en) | 1998-09-03 | 2001-08-28 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device containing a BiCMOS circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251165A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Manufacture of bi-mis integrated circuit |
JPS6265358A (en) * | 1985-09-13 | 1987-03-24 | Siemens Ag | Integrated circuit and manufacturing thereof |
-
1987
- 1987-05-13 JP JP62116089A patent/JPS63281456A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251165A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Manufacture of bi-mis integrated circuit |
JPS6265358A (en) * | 1985-09-13 | 1987-03-24 | Siemens Ag | Integrated circuit and manufacturing thereof |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03145759A (en) * | 1989-10-19 | 1991-06-20 | Internatl Business Mach Corp <Ibm> | Method for manufacturing semiconductor device |
US5100815A (en) * | 1989-12-27 | 1992-03-31 | Oki Electric Industry Co., Ltd. | Fabrication method for bimos semiconductor devices with improved speed and reliability |
JPH07176639A (en) * | 1993-12-17 | 1995-07-14 | Nec Corp | Semiconductor integrated circuit device and fabrication thereof |
EP0746032A2 (en) | 1995-05-29 | 1996-12-04 | Matsushita Electronics Corporation | Semiconductor integrated circuit comprising bipolar transistors and MOS transistors and associated fabrication method |
EP0746032A3 (en) * | 1995-05-29 | 1998-09-02 | Matsushita Electronics Corporation | Semiconductor integrated circuit comprising bipolar transistors and MOS transistors and associated fabrication method |
US6001676A (en) * | 1995-05-29 | 1999-12-14 | Matsushita Electronics Corporation | Semiconductor integrated circuit apparatus and associated fabrication |
US6156595A (en) * | 1997-10-08 | 2000-12-05 | Sawada; Shigeki | Method of fabricating a Bi-CMOS IC device including a self-alignment bipolar transistor capable of high speed operation |
US6281060B1 (en) | 1998-09-03 | 2001-08-28 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device containing a BiCMOS circuit |
US6426533B2 (en) | 1998-09-03 | 2002-07-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
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