JPS63276201A - Voltage non-linear resistor ceramic composition - Google Patents
Voltage non-linear resistor ceramic compositionInfo
- Publication number
- JPS63276201A JPS63276201A JP62110740A JP11074087A JPS63276201A JP S63276201 A JPS63276201 A JP S63276201A JP 62110740 A JP62110740 A JP 62110740A JP 11074087 A JP11074087 A JP 11074087A JP S63276201 A JPS63276201 A JP S63276201A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- oxide
- weight
- voltage
- ceramic composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 10
- 239000000919 ceramic Substances 0.000 title claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract 6
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 4
- 239000000292 calcium oxide Substances 0.000 claims abstract 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000000463 material Substances 0.000 abstract description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 abstract description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052573 porcelain Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電子機器や電気機器で発生する異常電圧、ノ
イズ、スパークなどを吸収もしくは除去するために使用
されるＴｉＯ□を主体とした電圧非直線性抵抗体磁器組
成物に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a voltage mainly composed of TiO□, which is used to absorb or remove abnormal voltage, noise, sparks, etc. generated in electronic and electrical equipment. The present invention relates to a nonlinear resistor ceramic composition.
最近の電子回路装置にはＩＣ、トランジスタ等の半導体
部品が広範囲に使用され、装置の小型化がはかられてい
る。ところが、半導体部品を組込んだ装置は異常電圧に
弱く、その為一般にはバリスタ素子を組込んでそれぞれ
の部品を保護している。また小型直流モーターを使用す
る電気機器も多くなってきているが、この小型直流モー
ターを動作させると、回転子が磁界中を回転して電機子
巻線が磁力線を切ることにより逆起電圧が発生し、。2. Description of the Related Art Semiconductor components such as ICs and transistors are widely used in recent electronic circuit devices, and efforts are being made to miniaturize the devices. However, devices incorporating semiconductor components are susceptible to abnormal voltages, and for this reason, varistor elements are generally incorporated to protect each component. In addition, more and more electrical devices are using small DC motors, and when these small DC motors are operated, the rotor rotates in a magnetic field and the armature windings cut the lines of magnetic force, generating a back electromotive voltage. death,.
この逆起電圧で刷子と整流子片間にスパークが生じる。This back electromotive force generates sparks between the brushes and the commutator pieces.
このスパークは妨害電波を発生し且つ整流ｒ・片の寿命
を短くする。この為、整流子片間には逆起電圧を吸収さ
せる為のバリスタ素子が接続される。This spark generates interference and shortens the life of the rectifier. For this reason, a varistor element is connected between the commutator pieces to absorb the back electromotive force.
〔発明が解決しようとする問題点〕 ′と
ころで前記バリスタ素子としては従来ＳｉＣバリスタ、
酸化亜鉛バリスタ、５ｒＴｉＯｓ系バリスタ等が知られ
ている。し・かしながら、ＳｉＣバリスタは電圧非直線
係数αが２〜３未満と小さいという欠点をイ１する。ま
た、酸化亜鉛バリスタではαは１０〜５０と大きいが製
造に手間がかかり高価であるという欠点を有する。さら
に、５ｉＴｉ０３系バリスタはαが３〜２０と大きいが
、半田付時のサーマルショックに侶くサーマルクラック
が生ずるという欠点を有している。[Problems to be solved by the invention] 'By the way, as the varistor element, conventional SiC varistors,
Zinc oxide varistors, 5rTiOs-based varistors, etc. are known. However, the SiC varistor has a drawback in that the voltage nonlinearity coefficient α is as small as less than 2 to 3. In addition, although the value of α is as large as 10 to 50 in zinc oxide varistors, they have the drawback of being labor-intensive and expensive to manufacture. Further, although the 5iTi03 type varistor has a large α of 3 to 20, it has the disadvantage that thermal cracks occur due to thermal shock during soldering.
そこで本発明の目的は所要のバリスタ電圧、非直線係数
を容易に得ることができると共に、サーマルショックに
強く、しかも安価なバリスタ組成物を提供することにあ
る。Therefore, an object of the present invention is to provide a varistor composition that can easily obtain the required varistor voltage and nonlinear coefficient, is resistant to thermal shock, and is inexpensive.
上記目的を達成する為、本発明はＴｉＱｚ ９８．９３
〜９９．５１重量％と、ＢａＯＯ，１〜０．４５重量％
と、ＮｂｔＯｓ Ｏ，１〜０．５重量％と、５ｉＯｔＯ
，０１〜０．２１ｍ量％と、ＣａＯＯ，０１〜０．２重
量％と、ＡＩｚＯ，０，００１〜０．１５重世％とから
なることを特徴とする焼結型電圧非直線性抵抗体磁器組
成物を提供するものである。In order to achieve the above object, the present invention uses TiQz 98.93
~99.51% by weight and BaOO, 1-0.45% by weight
, NbtOsO, 1 to 0.5% by weight, and 5iOtO
, 01 to 0.21 m% by weight, 01 to 0.2% by weight of CaOO, and 0.001 to 0.15% by weight of AIzO. A porcelain composition is provided.
ＴｉＯ２、ＢａＣＯ５、ＮｂｇＯｓ 、、５ｉＯｚ、Ｃ
ａＣＯ５、Ａｌｔ（ｈをそれぞれ第１表に示す組成に換
算秤量し、メノー石とポットで１０時間混合する。その
後、１１００〜１２５０℃の間で約２時間仮焼成し、こ
れをボットミルでメノー石を入れて粉砕する。TiO2, BaCO5, NbgOs, 5iOz, C
aCO5 and Alt (h) are each converted into the composition shown in Table 1 and weighed and mixed with agate in a pot for 10 hours. Then, calcined at 1100 to 1250°C for about 2 hours, and mixed with agate in a bot mill. and crush it.
次に、上記微粉末材料に有機結合剤としてポリビニール
アルコール溶１夜を上記材料１００％に対して５〜１５
ｆｆｔＦｉ１％混入し、５００〜２０００ｋｉｒｆ／ｃ
ｄの圧力で外径１２．４ｍｓ、内径？、 ９ ｌｌ−１
厚み１．００鶴の形状に成形したのち、この成形物を１
３００〜Ｌ４５０℃の間で約２時間焼成する。Next, polyvinyl alcohol solution was added to the above fine powder material as an organic binder at a rate of 5 to 15% per 100% of the above material.
fftFi 1% mixed, 500-2000 kirf/c
d pressure, outer diameter 12.4ms, inner diameter? , 9 ll-1
After molding into the shape of a crane with a thickness of 1.00, this molded product was
Bake at 300-450°C for about 2 hours.
次に、バリスタ素子を得る為に第１図に示す如くリング
状の磁器素体ｌの片面に銀電極を同図のように塗布し、
４００〜１０００℃で焼付けることにより電極２を形成
し、バリスタ素子３を完成させた。Next, in order to obtain a varistor element, a silver electrode was coated on one side of the ring-shaped porcelain body L as shown in FIG.
The electrode 2 was formed by baking at 400 to 1000°C, and the varistor element 3 was completed.
なお、バリスタ作用は焼結体の内部で生じているので電
極２の材料または形成方法は、上記に限定されるもので
はなく、例えばＩｎ−Ｇａ合金で形成してもよいし、蒸
着やメッキで形成してもよい。また、バリスタ素子３の
構造としては、第２図のように電極２を磁器素体１の上
下両面に設けたもの（但し、下面側の電極２は円盤状で
、磁器素体Ｉの下面全体を覆って設けられている）や、
第３図のように磁器素体ｌの側面に設けたものも採用で
きる。Note that since the varistor action occurs inside the sintered body, the material or forming method of the electrode 2 is not limited to the above. For example, it may be formed from an In-Ga alloy, or may be formed by vapor deposition or plating. may be formed. The structure of the varistor element 3 is such that the electrodes 2 are provided on both the upper and lower surfaces of the porcelain body 1 as shown in FIG. ),
A structure provided on the side surface of the porcelain body l as shown in FIG. 3 can also be adopted.
次に、バリスタの特性評価を行なう為にＥｌ。、α、温
度特性としてΔＥ、。７（％／’Ｃ）及び耐パルス特性
としてΔＥｔｅｌ） （％）、Δα、（％）を測定した
ところ第１表の結果が得られた。Next, El was used to evaluate the characteristics of the varistor. , α, and ΔE as the temperature characteristic. 7 (%/'C) and the pulse resistance characteristics ΔEtel) (%), Δα, (%) were measured, and the results shown in Table 1 were obtained.
なお、バリスタの電圧−電流特性はＩ＝Ｃ♂で示される
。但し、ここでＥはバリスタに印加する電圧、ｌはバリ
スタに流れる電流、Ｃは定数、αは非直線係数である。Note that the voltage-current characteristic of the varistor is represented by I=C♂. However, here, E is the voltage applied to the varistor, l is the current flowing through the varistor, C is a constant, and α is a nonlinear coefficient.
そこで、αを次式によって求めた。Therefore, α was calculated using the following formula.
ｔｏｇ （Ｅ＋ｅ／ｌ！＋） ｌｏｇ （Ｅ＋ｏ
／Ｅ＋）但し、ここでＥｌ。は１０ｍへのバリスタ電流
！、。の時のバリスタ電圧、Ｅｌは１＋ｗＡのバリスタ
電流！、の時のバリスタ電圧である。tog (E+e/l!+) log (E+o
/E+) However, here El. is the varistor current to 10m! ,. The varistor voltage when , El is the varistor current of 1+wA! is the varistor voltage when .
また、αとＥｌ。の温度特性を求める為に、第４図に示
すように直流定電流源４にバリスタ素子３゜を接続し、
且つ電流計５と電圧計６とを接続し、バリスタ素子３１
を２０℃の恒温槽（図示せず）に入れて１ＯｓＡの電流
を流した時のバリスタ電圧（Ｅ、。）２゜を測定し、そ
の後上記バリスタ素子３゜を７θ℃の恒温槽（図示せず
）に入れて１０ｍへの電流を流したバリスタ電圧（Ｅ、
。）、。を測定した。Also, α and El. In order to find the temperature characteristics of
In addition, the ammeter 5 and the voltmeter 6 are connected, and the varistor element 31
The varistor voltage (E,.) 2° was measured when the varistor element was placed in a 20°C thermostatic oven (not shown) and a current of 1 OsA was passed through it, and then the varistor element 3° was placed in a 7θ°C thermostatic oven (not shown). The varistor voltage (E,
. ),. was measured.
そして、Ｅｌｏの温度変化率ΔＥ１゜１を次式により求
めた。Then, the temperature change rate ΔE1°1 of Elo was determined using the following equation.
また、耐パルス特性は、第５図に示す如く定電圧源７に
電圧計８を接続し、且つ抵抗９と切換スイッチ１０とを
介してコンデンサ１１を接続して、このコンデンサの電
圧をスイッチ１０によってバリスタ素子３□に印加する
回路で測定した。さらに詳細には、コンデンサ１１に１
５０Ｖ充電し、１５０Ｖのパルス電圧をバリスタ素子３
ｔに５０回印加することによってＥｌｌｌとαがどの様
に変化するかを次式で求めた。In addition, the pulse resistance characteristics can be determined by connecting a voltmeter 8 to a constant voltage source 7 as shown in FIG. It was measured using a circuit that applied voltage to the varistor element 3□. More specifically, the capacitor 11 has one
Charge 50V and apply a pulse voltage of 150V to varistor element 3.
How Ell and α change by applying t 50 times was calculated using the following equation.
（Ｅｌ。）。(El.).
（α）、−（α）Ａ
（α）Ａ
但し、ΔＥ、。、はパルスを加えた場合のＥ、。の変化
率、（Ｅｌ。）Ａはパルスを加える前のＥｌ。値、（Ｅ
Ｉｏ）Ｂはパルスを加えた後のＥｌ。値、Δα、はパル
スを加えた場合のαの変化率、（α）、はパルスを加え
る前のα値、（α）ｌｌはパルスを加えた後のα値であ
る。(α), -(α)A (α)A However, ΔE,. , is E when a pulse is applied. The rate of change of (El.) A is El before applying the pulse. value, (E
Io) B is El after applying the pulse. The value Δα is the rate of change of α when a pulse is applied, (α) is the α value before the pulse is applied, and (α)ll is the α value after the pulse is applied.
以下余白
第１表において試料１番号ｌ、８．９．１５．１６．２
２．２３．２８．２９及び３５はαが２．９以下か、Δ
Ｅ１゜、が良品基準の−０，５０％／℃を超えるか、Δ
Ｅ、。、が１０％より大であるか、またはΔα、が一１
０％を超えるため、本発明の範囲外である。In Table 1 in the margin below, sample 1 number l, 8.9.15.16.2
2.23.28.29 and 35 have α less than 2.9 or Δ
E1゜, exceeds -0.50%/℃ of good quality standard, or Δ
E. , is greater than 10%, or Δα is -1
Since it exceeds 0%, it is outside the scope of the present invention.
本実施例に示される如＜Ｔ；ｏ、！３８．９３〜９９．
５１−１％、Ｂａ００．１〜０．４５ｗｔ％、ＮｂｚＯ
ｓ Ｏ，１〜０．５ｗｔ％、５ｉ０２０．０１〜０．２
ｗｔ％、ＣａＯ０１０１〜０．２ｗｔ％、＾１ｚＱｉ
Ｏ，（１０１〜０１１５ｗｔ％を含有する試料は、バ
リスタとして使用することが可能な非直線係数α３．０
〜４．１を有すると共に、温度特性の変化率が−０，４
２％／℃以下であり、耐パルス特性の変化率が−８，８
％以下と小さいことが判った。As shown in this example <T;o,! 38.93-99.
51-1%, Ba00.1-0.45wt%, NbzO
sO, 1-0.5wt%, 5i020.01-0.2
wt%, CaO0101~0.2wt%, ^1zQi
The sample containing O, (101~0115wt%) has a nonlinear coefficient α3.0 that can be used as a varistor.
~4.1, and the rate of change of temperature characteristics is -0.4
2%/℃ or less, and the rate of change in pulse resistance characteristics is -8.8
It was found to be small, less than %.
以上述べたように本発明の組成物は、バリスタとして使
用することが可能な非直線係数αを有すると共に、温度
特性の変化率、耐パルス特性の変化率が小さく、広範囲
にわたって所望のバリスタ電圧を存するものが得られ、
安価で製造する。ことができるうえ、バリスタ素子用と
して極めて優れた磁器組成物となりうるちのである。As described above, the composition of the present invention has a nonlinear coefficient α that allows it to be used as a varistor, has a small rate of change in temperature characteristics and a small rate of change in pulse resistance characteristics, and can maintain a desired varistor voltage over a wide range. what exists is obtained,
Manufacture cheaply. Not only that, but it can also be used as an extremely excellent porcelain composition for varistor elements.
第１図、第２図及び第３図は本発明の適用が可能な相異
なる構造のバリスタ素子の斜視図、第４図は本発明の適
用に係るバリスタ素子のα、Ｅｌ。
の温度特性を測定するための装置の電気回路図、第５図
は本発明の適用に係るバリスタ素子の耐パルス特性を測
定するための装置の電気回路図である。
ｌ・・・磁器素体、２・・・電極、３．３＋、３ｇ・・
・バリスタ素子、４・・・直流定電流源、５・・・電流
計、６・・・電圧計、７・・・定電圧源、８・・・電圧
計、９・・・抵抗、１０・・・切換スイッチ、１１・・
・コンデンサ。1, 2, and 3 are perspective views of varistor elements with different structures to which the present invention can be applied, and FIG. 4 shows α and El of the varistor element to which the present invention is applicable. FIG. 5 is an electrical circuit diagram of an apparatus for measuring the pulse resistance characteristics of a varistor element to which the present invention is applied. l...Porcelain element, 2...Electrode, 3.3+, 3g...
・Varistor element, 4... DC constant current source, 5... Ammeter, 6... Voltmeter, 7... Constant voltage source, 8... Voltmeter, 9... Resistor, 10... ...Choice switch, 11...
・Capacitor.
Claims (1)
重量％、酸化バリウムＢａＯ ０．１〜０．４５重量％
、五酸化ニオブＮｂ＿２Ｏ＿５ ０．１〜０．５重量％
、二酸化ケイ素ＳｉＯ＿２ ０．０１〜０．２重量％、
酸化カルシウムＣａＯ ０．０１〜０．２重量％、及び
、 酸化アルミニウムＡｌ＿２Ｏ＿３ ０．００１〜０．１
５重量％を含有していることを特徴とする電圧非直線性
抵抗体磁器組成物。(1) Titanium oxide TiO_2 98.93-99.51
Weight%, barium oxide BaO 0.1-0.45% by weight
, niobium pentoxide Nb_2O_5 0.1-0.5% by weight
, silicon dioxide SiO_2 0.01-0.2% by weight,
Calcium oxide CaO 0.01-0.2% by weight, and aluminum oxide Al_2O_3 0.001-0.1
5% by weight of a voltage nonlinear resistor ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62110740A JPH0810646B2 (en) | 1987-05-08 | 1987-05-08 | Voltage nonlinear resistor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62110740A JPH0810646B2 (en) | 1987-05-08 | 1987-05-08 | Voltage nonlinear resistor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63276201A true JPS63276201A (en) | 1988-11-14 |
| JPH0810646B2 JPH0810646B2 (en) | 1996-01-31 |
Family
ID=14543324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62110740A Expired - Fee Related JPH0810646B2 (en) | 1987-05-08 | 1987-05-08 | Voltage nonlinear resistor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810646B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH031405U (en) * | 1989-05-22 | 1991-01-09 | ||
| CN100442400C (en) * | 2000-11-15 | 2008-12-10 | Tdk株式会社 | Thyrite ceramic, manufacturing method and thyrite apparatus |
-
1987
- 1987-05-08 JP JP62110740A patent/JPH0810646B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH031405U (en) * | 1989-05-22 | 1991-01-09 | ||
| CN100442400C (en) * | 2000-11-15 | 2008-12-10 | Tdk株式会社 | Thyrite ceramic, manufacturing method and thyrite apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0810646B2 (en) | 1996-01-31 |
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