JPS63274964A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To improve the resolution, durability, and productivity of the title member by forming the photoreceptive layer consisting of a lower layer of the inorg. member contg. specified atoms in specified distribution and an upper layer of the non-single crystal material contg specified atoms and contg. a specified atom at the contact region with the lower layer on an Al supporting body. CONSTITUTION:The photoreceptive layer 102 consisting of the lower layer 103 of the inorg. material contg. the Al atom, H atom, and Si atom unevenly distributed in the thickness direction and the CNOc atom for regulating durability and the upper layer 104 of the non-crystal material with an Si atom as the matrix and contg. at least one between an H atom and a halogen atom, and contg. the atom for controlling the conductivity at the contact region with the layer 103 is formed on the Al supporting body 101, and hence the resolution, durability, and productivity are enhanced. In addition, the charge injection blocking property between the layers 103 and 104 can be selectively controlled by the atom for controlling the conductivity, and the resolution is further enhanced.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to electromagnetic waves such as light (here, light in a broad sense, meaning ultraviolet rays, visible light, infrared rays, X-rays, γ-rays, etc.). The present invention relates to a photoreceptor member that is sensitive to light.

[Prior art]

In the field of image formation, photoconductive materials constituting the photoreceptive layer of photoreceptive members are highly sensitive, have a high S/N ratio [photocurrent (Ip)/dark current (Id)], and are highly sensitive to the spectral characteristics of the electromagnetic waves to be irradiated. It has suitable absorption spectrum characteristics, fast photoresponsiveness, and desired dark resistance value.
Characteristics such as being non-polluting to the human body during use are required. Particularly in the case of an electrophotographic light receiving member incorporated into an electrophotographic apparatus used in an office as a business machine, the above-mentioned non-pollution during use is an important point.

Based on this point, amorphous silicon (hereinafter referred to as A-8t) is a photoconductive material that has recently attracted attention.
855718 and the like describes its application as a light-receiving member for electrophotography. FIG. 2 is a sectional view schematically showing the layer structure of a conventional light-receiving member for electrophotography.
1 is an aluminum support, and 202 is a photosensitive layer made of A-8i.

Such an electrophotographic light-receiving member is generally produced by heating an aluminum support 201 to 50°C to 350°C and depositing it on the support by a thermal CVD method, a plasma CVD method, or the like.
A photosensitive layer 202 made of A-8i is created by a film forming method such as sputtering.

However, in this electrophotographic peripheral light receiving member, since the thermal expansion coefficients of aluminum and A-8i differ by about one order of magnitude, cracks or peeling may occur in the A-3i negative light 202 during cooling after film formation. This has become a problem. In order to solve these problems, JP-A-59-28162 proposes an electrophotographic photoreceptor consisting of an aluminum support, an intermediate layer containing at least aluminum, and an A-3i photoreceptor. The aluminum-based support and the A-3i
It relieves the stress caused by the difference in thermal expansion coefficients of the A-3i Nausea and reduces cracking and peeling of the A-3i Nausea.

[Problem to be solved by the invention] However,
Electrophotographic light-receiving members having a light-receiving layer made of conventional A-8i have poor electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, and photoresponsiveness, as well as use environment characteristics. ,
Furthermore, in terms of stability over time and durability, although improvements have been made in each individual property, the reality is that there is room for further improvement in terms of overall property improvement. For example, in recent years, improvements have been made to optical exposure devices, developing devices, transfer devices, etc. in electrophotographic devices to improve the image characteristics of electrophotographic devices, and as a result, the image characteristics of light-receiving members for electrophotography have also improved more than ever before. is now in demand. In particular, as a result of improved image resolution, there is a reduction in non-uniformity in fine areas of image density, commonly known as "roughness", and a reduction in image defects in the form of black or white spots, commonly known as "pots". In particular, there has been a need to reduce "pots" of minute size, which were not considered a problem in the past.

Furthermore, when the electrophotographic light receiving member comes into contact with foreign matter that has entered the electrophotographic device, or when the electrophotographic light receiving member comes into contact with the electrophotographic device itself or maintenance tools during maintenance of the electrophotographic device, There have been problems in that the durability of the electrophotographic light-receiving member is impaired due to the occurrence of image defects and the occurrence of peeling of the A-8i film due to the impact mechanical pressure applied for a relatively short period of time.

Furthermore, due to the stress generated due to the difference in thermal expansion coefficient between the aluminum support and the A-8i film, cracks and peeling occur in the A-3i film, resulting in a reduction in productivity and yield.

Therefore, while efforts are being made to improve the properties of the A-8i material itself, when designing an electrophotographic light receiving member, it is important to consider the overall structure of the electrophotographic light receiving member so that all of the above-mentioned problems are resolved. It is necessary to make improvements from this perspective.

[Means and effects for solving the problems] The electrophotographic light-receiving member of the present invention has an aluminum support and a multilayer light-receiving layer having at least photoconductivity on the support. In the light-receiving member, the light-receiving layer is made of an inorganic material containing, from the support side, at least aluminum atoms (A1), silicon atoms (Si), hydrogen atoms (H), and durability adjusting atoms (CN0c) as constituent elements. material (hereinafter abbreviated as rA1siHj), and the aluminum atom (A1) and silicon atom (Si)
and a lower layer having a portion containing hydrogen atoms (H) in a non-uniform distribution state in the layer thickness direction; A non-single-crystalline material (rNon-8i (H)) containing at least one of them.

X) (abbreviated as J), and is characterized by comprising an upper layer containing atoms for controlling conductivity in a layer region in contact with the lower layer.

The electrophotographic light-receiving member of the present invention designed to have the above-described layer structure can solve all of the above-mentioned problems, and has extremely excellent electrical properties, optical properties, and photoconductive properties. , image characteristics, durability and use environment characteristics.

In particular, in the lower layer, aluminum atoms, silicon atoms, and especially hydrogen atoms are contained in a non-uniform distribution state in the layer thickness direction, and durability-adjusting atoms (CNO) are contained in the aluminum-based support. The ability to inject charge (photocarriers) between the body and the upper layer is improved, and the structural continuity of the constituent elements between the aluminum support and the upper layer is improved, so roughness and Image characteristics such as spots are improved, halftones appear clearly, and high-quality images with high resolution can be stably and repeatedly obtained.

Furthermore, as a distinctive feature of the durability-adjusting atom content,
Significant improvement in durability against relatively short-term impact mechanical pressure applied to light-receiving members for electrophotography has been achieved.
This further improves durability by preventing image defects and peeling of the Non-3i (H, It alleviates the stress caused by the difference in Non-3i
It is possible to prevent cracks and peeling of the (H,X) film, and to significantly improve yield in productivity.

Furthermore, in the present invention, by containing atoms (M) that control conductivity in the layer region in contact with the lower layer in the upper layer, charge injection properties or charge injection blocking properties between the upper layer and the lower layer are achieved. can be selectively controlled or improved, image characteristics such as roughness and blur can be further improved, and high-quality images with clear halftones and high resolution can be stably and repeatedly obtained. Not only that, but the charging ability, sensitivity and durability are also improved.

In addition, although it is mentioned in the above-mentioned Japanese Patent Application Laid-Open No. 59-28162 that aluminum atoms and silicon atoms are contained unevenly in the layer thickness direction, and that hydrogen atoms are also contained, There is no mention of how it is written, and it is clearly distinguished from the present invention.

[Detailed description of the invention]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The electrophotographic light-receiving member of the present invention will be described in detail below with reference to the drawings.

FIG. 1 is a diagram schematically showing a preferred layer structure of the electrophotographic light-receiving member of the present invention.

The electrophotographic light-receiving member 100 shown in FIG. The lower layer 103 has a portion containing non-uniform distribution in the direction;
The light-receiving layer 102 has a layer structure consisting of an upper layer 104 made of Si (H, Top layer 104 has a free surface 105.

Aluminum-based support 101 used in the present invention
An aluminum alloy is used as the material. There are no particular restrictions on the alloy components, including the substrate aluminum, in the aluminum alloy of the present invention (the types, composition, etc. of the components can be arbitrarily selected). Therefore, the aluminum alloy of the present invention includes: Japanese Industrial Standards (J
IS), AA standards, BS standards, DIN standards, international alloy registration, etc., for pure aluminum, Al-Cu, etc., which are standardized or registered as wrought materials, castings, die castings, etc.
Al-Mn system, ^1-Si system, Al-Mg system, ^1-M
Alloys with compositions such as g-5i series, AI-Zn-Mg series, etc.
Al-Cu-Mg system (duralumin, super duralumin, etc.), Al-Cu-3i system (Lautal, etc.), Al-Cu
-Ni-Mg system (Y alloy, RR gold alloy), aluminum powder sintered body (SAP), etc. are contained.

Incidentally, although the specific composition of the aluminum alloy of the present invention is illustrated below, this is only an example of the present invention, and the present invention is not limited to the following example.

Examples of pure aluminum include JISIloo,
Si and Fe 1.0% by weight or less, Cu O, 05-0
．． 20% by weight, Mn 0.05% by weight or less, Zn
Examples include 0.10% by weight or less, and 99.00% by weight or more of AI.

As the Al-Cu-Mg system, for example, JIS 2017, Si 0.05 to 0.20% by weight, Fe 0.7% by weight
Below, Cu3.5~4.5% by weight, MnO, 40~
1.0% by weight, MgO, 40-0.8% by weight, Zn
O, 25% by weight or less, CrO3, 10% by weight or less, A1
The remainder is mentioned.

As the Al-Mn system, for example, JIS3003 (7)
, Si 0.6% by weight or less, Fe 0.7% by weight or less, C
u O, 05-0.20% by weight, In 1.0-1.
5% by weight, Zn 0.10% by weight or less, and the balance A1.

^ As the 1-3i system, for example, JIS4032, 5i
11.0 to 13.5% by weight, Fe 1.0% by weight or less, C
u0.50-1.3% by weight, MgO, 8-1.3% by weight, Zn 0.25% by weight or less, CrO, 10% by weight or less, NiO, 5-1.3% by weight, AI balance can be mentioned.

As the Al-Mg system, for example, 5i of JIS5086
O 140% by weight or less, Fe O, 50% by weight or less, C
uO, 10% by weight or less, MnO, 20-0.7
Weight %, Mg 3.5-4.5 weight %, Zn 0.25
Weight% or less, CrO, 05-0.25% by weight, Ti
The balance of Al may be 0.15% by weight or less.

Furthermore, SiO, 50% by weight or less, FeO,
25% by weight or less, CuO, 04-0.20% by weight,
N O, 01-1.0% by weight, Mg O, 5-10
Weight%, Zn 0.03 to 0.25% by weight or less, Cr
0.05-0.50% by weight, Ti or TrO,
05-0.20% by weight,)1. The remaining amount is 1.0 cc or less per 100 grams of A1.

Furthermore, Si 0.12% by weight or less, Fe0
．． 15% by weight or less, Mn O, 30% by weight or less, Mg
O, 5-5.5% by weight, Zn 0.01-1.0% by weight or less, Cr 0.20% by weight or less, Zr O, 01-
0.25% by weight or less, the balance being A1.

As the Al-Mg-5i system, for example, JIS6063, Si 0.20 to 0.6% by weight, FeO, 35% by weight or less, Cu 0.10% by weight or less, ) in 0.10
Weight% or less, MgO, 45-0.9% by weight, Zn
0.10% by weight or less, CrO, 10% by weight or less,
TiO, 10% by weight or less, balance A1.

As the Al-Zn-Mg system, for example, JIS7NO1, Si 0.30% by weight or less, Fe O, 35% by weight or less, Cu 0.20% by weight or less, Mn 0.20-0.
7% by weight, Mg 1.0-2.0% by weight, Zn 4.0
~5.0% by weight, CrO, 30% by weight or less, Ti
0.20% by weight or less, Zr O, 25% by weight or less,
Vo, 10% by weight or less, balance A1.

In order to select the composition of the aluminum alloy in the present invention, the composition may be appropriately selected by considering the properties depending on the purpose of use, such as mechanical strength, corrosion resistance, workability, heat resistance, dimensional accuracy, etc. When precision machining involves mirror-finishing cutting, etc., the free machinability of the aluminum alloy is improved by coexisting magnesium and/or copper in the aluminum alloy.

In the present invention, the shape of the aluminum support 101 is as follows:
It can be in the shape of a cylindrical or plate-like endless belt with a smooth or uneven surface, and its thickness is determined as appropriate to form a desired electrophotographic light-receiving member.
When flexibility is required as a light-receiving member for electrophotography, it can be made as thin as possible within the range where the function as a support is fully exhibited.However, due to the manufacturing of the support and In terms of handling and mechanical strength, it is usually 1
It is assumed to be 0 μm or more.

When image recording is performed using coherent light such as a laser or light, irregularities may be provided on the surface of the aluminum support in order to eliminate image defects caused by so-called interference fringe patterns that appear in visible images.

The unevenness provided on the surface of the support is described in Japanese Patent Application Laid-Open No. 60-1681.
56, JP-A-60-178457, JP-A-60-225854, and the like.

Further, as another method for eliminating image defects caused by interference fringe patterns when coherent light such as laser light is used, an uneven shape formed by a plurality of spherical trace depressions may be provided on the surface of the support.

That is, the surface of the support has irregularities smaller than the resolving power required for electrophotographic light-receiving members, and the irregularities are
This is due to multiple spherical trace depressions.

The unevenness formed by the plurality of spherical trace depressions provided on the surface of the support is created by a known method described in JP-A-61-231561.

1 Ri1 The lower layer in the present invention is composed of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), hydrogen atoms (H), and durability adjusting atoms (CNOC) as constituent elements. It may contain an atom (M c ) that adjusts the image quality depending on the .

Aluminum atoms (A1), silicon atoms (Si), and hydrogen atoms (H) contained in the lower layer are evenly contained in the entire layer region of the lower layer, but their distribution in the layer thickness direction is It has areas with uneven concentration. However, in the in-plane direction parallel to the surface of the support, it is necessary that the content be uniformly distributed and evenly distributed in order to make the properties uniform in the in-plane direction.

Durability adjusting atoms (CNOc) contained in the lower layer
), atoms (M
c) may be contained uniformly in the entire layer area of the lower layer, or may be contained uniformly in the entire layer area of the lower layer, but may be contained evenly in the layer thickness direction. However, in any case, in the in-plane direction parallel to the surface of the support, it is evenly distributed and contained evenly. This is also necessary from the point of view of making the characteristics uniform in the in-plane direction.

Further, in one of the preferred embodiments, aluminum atoms (AI), silicon atoms (
Si), the distribution state of hydrogen atoms (H) is such that aluminum atoms (A1), silicon atoms (Si), and hydrogen atoms (H) are continuously and evenly distributed in the entire layer region, and aluminum atoms (A1) The distribution concentration in the layer thickness direction decreases from the support side toward the upper layer, and silicon atoms (S
i) Since the distribution concentration of hydrogen atoms (H) in the layer thickness direction increases from the support side toward the upper layer, the affinity between the aluminum support and the lower layer and between the lower layer and the upper layer is improved. Excellent in sex.

In the electrophotographic light-receiving member of the present invention, as described above, aluminum atoms (AI) contained in the lower layer
The distribution state of silicon atoms (Si) and hydrogen atoms (H) is as described above in the layer thickness direction, and is uniformly distributed in the in-plane direction parallel to the surface of the support. is desirable.

3 to 8 show aluminum atoms (AI) contained in the lower layer of the electrophotographic light receiving member of the present invention.
), a typical example of the distribution state of the durability adjusting atom (CNOC), and the image quality adjusting atom (M c ) contained as needed in the layer thickness direction.

In Figures 3 to 8, the horizontal axis is the aluminum atom (
AI) (hereinafter abbreviated as [atomic (AI) J), durability adjusting atom (CNOc) (hereinafter abbreviated as [atomic (AI)
c) J), atom (Me) that adjusts image quality (hereinafter abbreviated as "atom (Mc)J", atom (AI) and atom (C
NOc) and atoms (M c ) are collectively called “atoms (AC)”.
It is abbreviated as J. However, atoms (AI) and atoms (CNoC)
, the distribution state of atoms (MC) in the layer thickness direction may be the same or different), the vertical axis shows the layer thickness of the lower layer, and t is the lower layer on the support side. t7 indicates the position of the end face of the lower layer on the upper layer side. That is, the lower layer containing atoms (AC) is from the t side to the t7 side.
layered towards the sides.

FIG. 3 shows a first typical example of the distribution state of atoms (AC) contained in the lower layer in the layer thickness direction.

In the example shown in FIG. 3, the distribution concentration C of the contained atoms (AC) is C3 from the position te to the position ts+;
A distribution state is formed such that the concentration C3l decreases in a linear function from the position tsl to the position t7, and reaches the concentration C1 at the position ta.

In the example shown in FIG. 4, the distribution concentration C of the contained atoms (AC) is the concentration C4 from position t3 to position tT.
The concentration C decreases linearly from t at position 11.
42 is formed.

In the example shown in FIG. 5, the distribution concentration C of the contained atoms (AC) is at position 1. Concentration CB up to position ti
A distribution state is formed in which the concentration gradually and continuously decreases from + to a concentration Cfi2 at the position tr.

In the example shown in FIG. 6, the distribution concentration C of the contained atoms (AC) is C61 from position 1B to position tel.
A distribution state is formed in which the density decreases from the density C6 to the position ta in an order-of-magnitude manner, and becomes the density C0 at the position ta.

In the example shown in FIG. 7, the distribution concentration C of the contained atoms (AC) is at position 1. A distribution state is formed in which the concentration takes a constant value of CI+ up to the position t7+, gradually and continuously decreases from the concentration C12 from the position t71 to the position t7, and reaches the concentration C73 at the position t7. .

In the example shown in FIG. 8, the distribution concentration C of the contained atoms (AC) is the concentration C8,
The concentration C gradually and continuously decreases from tT to
82 is formed.

As described above with reference to FIGS. 3 to 8, some typical examples of the distribution state of atoms (A1) contained in the lower layer in the layer thickness direction, in the present invention, on the support side,
It contains silicon atoms (S i) and hydrogen atoms (H), has a portion with a high distribution concentration C of atoms (A1), and has an interface t
In No. 7, a preferable example is formed when the distribution concentration C has a portion where it is considerably lower than that on the support side. In this case, the maximum value Cma of the distribution concentration of atoms (A1)
It is desirable that x be formed in a layer such that the distribution state of x is preferably 10 atomic % or more, more preferably 30 atomic % or more, and optimally 50 atomic % or more.

In the present invention, the content of atoms (A1) contained in the lower layer is appropriately determined as desired so as to effectively achieve the object of the present invention, but preferably exceeds 5 at% and 95 atoms. % or less, more preferably 10 to 90 atomic %, most preferably 20 to 80 atomic %.

9 to 16 show silicon atoms (S i
), hydrogen atoms (H), atoms (CNOC), and optionally contained atoms (M c ) are shown as typical examples of the distribution state in the layer thickness direction.

In FIGS. 9 to 16, the horizontal axis represents silicon atoms (S
i), hydrogen atom (H), atom (CNOC), atom (Me
) (Hereinafter, these will be collectively referred to as [atoms (SHC) J. However, the distribution state of silicon atoms (Si), hydrogen atoms (H), atoms (CNOC), and atoms (M c ) in the layer thickness direction is the same. distribution concentration C (which may be or may be different)
, the vertical axis indicates the layer thickness of the lower layer, t indicates the position of the end surface of the lower layer on the support side, and 11 indicates the position of the end surface of the lower layer on the upper layer side. That is, the lower layer containing atoms (5HC) is formed from the t8 side toward the t layer side.

FIG. 9 shows a first typical example of the distribution state of atoms (SHC) contained in the lower layer in the layer thickness direction.

In the example shown in FIG. 9, the distribution concentration C of the contained atoms (SHM) increases numerically for one hour from the concentration C91 from position t to position te+, and from position t91 to position ta. forms a distribution state that takes a constant value of concentration C92.

In the example shown in FIG. 10, the atoms contained (SHC)
The distribution concentration C of the position t! From l to position ta, the concentration is C.
A distribution state is formed in which the concentration increases linearly from 1°1 to a concentration C3° at position 1T.

In the example shown in FIG. 11, the atoms contained (SHC)
The distributed concentration C gradually and continuously increases from the concentration C1,1 from the position 1++ to the position tT, and forms a distribution state in which the concentration C1□ is reached at the position 11.

In the example shown in FIG. 12, the atoms contained (SHC)
The distribution concentration C increases numerically for one hour from the concentration C3,1 from the position tll to the position t121, and then reaches the position 1. At □, the concentration becomes C122, and from position t2゜1 to position t7
Until then, a distribution state is formed that takes a constant value of concentration CI23.

In the example shown in FIG. 13, the contained atoms (SHC)
The distribution concentration C gradually and continuously increases from the concentration C1,1 from the position t8 to the position tIl+, and then reaches the position t1,1.
At the concentration CI$! Then, from position t1,1, position t
A distribution state is formed that takes a constant value of concentration CI□ up to T.

In the example shown in FIG. 14, the contained atoms (SHC)
The distribution concentration C gradually and continuously increases from the concentration CI41 from the position t to the position t7, and forms a distribution state in which the concentration CI42 is reached at the position 1T.

In the example shown in FIG. 15, the contained atoms (SHC)
The distribution concentration C of is substantially zero from position tIl to position t1111 (here, substantially zero means the case where the amount is less than the detection limit. The meaning of "substantially zero" hereinafter is also the same. ), the concentration C gradually increases at position t Il+.
I81, forming a distribution state in which the concentration takes a constant value C16 from position t1□ to position 11.

In the example shown in FIG. 16, the contained atoms (SHC)
The distribution concentration C gradually increases from substantially zero from position t to position ta, and reaches a concentration C16 at position t7.
A distribution state is formed in which the number is 1.

As described above with reference to FIGS. 9 to 16, some typical examples of the distribution state of silicon atoms (Si) and hydrogen atoms (H) contained in the lower layer in the layer thickness direction, in the present invention, is an aluminum atom (,Xl
”), and contains silicon atoms (Si) and hydrogen atoms (H
), and at the interface, the distribution concentration C is considerably higher than that on the support side. A preferred example is formed in the case where silicon atoms (Si),
The maximum value Crnax of the distribution concentration of the sum of hydrogen atoms (H) is
It is desirable that the layer be formed so as to achieve a distribution state of preferably 10 atomic % or more, more preferably 30 atomic % or more, and optimally 50 atomic % or more.

In the present invention, silicon atoms (
The content of Si) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 5 to 95 at%, more preferably 10 to 90 at%,
The optimum content is preferably 20 to 80 atomic %.

In the present invention, hydrogen atoms (H) contained in the lower layer
The content is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 0.
01 to 70 at%, more preferably 0.1 to 50 at%
The optimum content is preferably 1 to 40 atomic %.

As the atom (CNOc) for adjusting the durability, a carbon atom (C), a nitrogen atom (N), and an oxygen atom (0) are used. In the present invention, by containing carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (0) as atoms (CNOC') for adjusting durability in the lower layer, aluminum-based support is mainly used. The effect of improving the charge injection property between the body and the upper layer, the effect of improving the charge running property in the lower layer, and/or the effect of improving the adhesion between the aluminum support and the upper layer. Obtainable. Furthermore, the effect of controlling the forbidden band width can also be obtained in a layer region in which the content of aluminum atoms (AI) is small in the lower layer. The content of durability adjusting atoms (CNOc) contained in the lower layer is preferably 1X10' to 5X10' atoms p
i) m% more preferably 5X10' to 4x10s atoms p
pm 1 optimally IX'102 to 3 x 103 atomic ppm
It is desirable that it be taken.

Atoms (M
c), atoms belonging to group Ⅰ of the periodic table (hereinafter abbreviated as ``group Ⅰ atoms''), atoms belonging to group V of the periodic table excluding nitrogen atoms (hereinafter referred to as ``group V atoms'') (abbreviated as "Group VI atoms" hereinafter), excluding the oxygen atom (0) (atoms belonging to Group VI of the periodic table (hereinafter abbreviated as "Group VI atoms").

Specifically, the Group Ⅰ atoms include B (boron), AI (
aluminum), Ga (gallium), In (indium).

Examples include TI (thallium), and B, AI, and Ga are particularly preferred. Specifically, as Group V, P (phosphorus), As
(arsenic), Sb (antimony).

Examples include Bi (bismuth), and P and As are particularly preferred. Specifically, group Vl atoms include S (sulfur), Se
(selenium), Te (tellurium), PO (boronium), etc., with S and Se being particularly suitable. In the present invention,
By containing a group II atom, a group V atom, or a group vI atom as an atom (M c ) for adjusting image quality in the lower layer, the charge injection property between the aluminum support and the upper layer is mainly improved. Improving effects and/or
Alternatively, it is possible to obtain the effect of improving charge mobility in the lower layer. Furthermore, in the layer region with a small content of aluminum atoms (AI) in the lower layer, the conductivity type and /
Alternatively, the effect of controlling conductivity can also be obtained. The content of atoms (M c ) that adjusts the image quality contained in the lower layer is preferably 1X10-" to 5X10' atoms p
pm, more preferably 1xlO-'' to 1xlO' atoms ppm, optimally 1xlO-' to 5X10'' atoms ppm
It is desirable to set it to m.

In the present invention, the lower layer composed of Al5iH is formed, for example, by the same vacuum deposition film forming method as the upper layer described later, with numerical conditions of film forming parameters set appropriately so as to obtain desired characteristics. Ru. Specifically, for example, glow discharge method (alternating current discharge CVD such as low frequency CVD, high frequency CVD or microwave CVD, or direct current discharge CVD), ECR-CVD method, sputtering method, vacuum evaporation method, ion blating method, optical CVD method,
It can be formed by a number of thin film deposition methods such as. These thin film deposition methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, load level under capital investment, manufacturing scale, and desired characteristics of the electrophotographic light-receiving member to be produced. It is relatively easy to control the conditions for manufacturing electrophotographic light-receiving members with specific characteristics, and hydrogen atoms can be easily introduced in addition to aluminum atoms and silicon atoms. A discharge method, a sputtering method, and an ion blating method are suitable. These methods may be used in combination within the same device system. For example, by glow discharge method, Al5
In order to form the lower layer composed of iH, basically, a raw material gas for supplying AI that can supply aluminum atoms (AI), a gas for supplying Si that can supply silicon atoms (Si), and hydrogen. an H supplying gas capable of supplying atoms (H);
CN0 that can supply atoms that adjust durability (CNOc)
c supply gas and atoms (M
c) A Mc supply gas capable of supplying Mc is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge within the deposition chamber. A layer made of Al5iH may be formed on the surface of the support.

When forming by sputtering method, for example, Ar,
A target made of A1 in an atmosphere of an inert gas such as He or a mixed gas based on these gases,
Hydrogen atoms (H
), a CN0c supply gas that can supply atoms (CNOc) that adjust image quality, and M that can supply atoms (Mc) that adjust image quality as necessary.
c A supply gas is introduced into the deposition chamber for sputtering, and if necessary, a raw material gas for A1 supply that can supply aluminum atoms (A1) and/or a Si supply that can supply silicon atoms (Si). This is accomplished by introducing a sputtering gas into a deposition chamber for sputtering to form a plasma atmosphere of the desired gas.

In the case of the ion blating method, for example, aluminum and polycrystalline silicon or single crystal silicon are housed in an evaporation board as evaporation sources, and the evaporation sources are heated by a resistance heating method or an electron beam method (EB method). This can be carried out in the same manner as in the sputtering method, except for heating and evaporating and passing the flying evaporated material through a desired gas plasma atmosphere.

In the present invention, when forming the lower layer, aluminum atoms (AI) and silicon atoms (Si) contained in the layer are
, hydrogen atom (H), durability adjusting atom (CNOc)
, atoms (Me) that adjust the image quality if necessary.
) (hereinafter collectively abbreviated as "atoms (ASH) J") to change the distribution concentration C in the layer thickness direction to form a layer having a desired distribution state (depth profile) in the layer thickness direction. In the case of the glow discharge method, this is achieved by introducing a raw material gas for supplying atoms (ASH) whose distribution concentration is to be changed into the deposition chamber while changing the gas flow rate appropriately according to a desired rate of change curve. be done.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow path system is changed as appropriate by any commonly used method such as manually or by an externally driven motor.

When forming by sputtering method, atoms (A S
In order to change the distribution concentration C of H) in the layer thickness direction to form a layer having a desired depth profile, first, as in the case of the glow discharge method, This is accomplished by using a raw material for supplying atoms (A S H) in a gaseous state, changing the gas flow rate appropriately according to a desired rate of change curve, and introducing the gas into the deposition chamber.

Second, the target for sputtering is, for example, A1
If a target containing a mixture of AI and Si is used, this can be done by changing the mixing ratio of AI and Si in advance in the layer thickness direction of the target.

Substances that can be used as the raw material gas for supplying A1 used in the present invention include AlCl5, AlBr5゜AI1
．． , AI (CH,), CI, AI (CH,),.

Al(OCH3)3. AI(C2H,).

AI(OC2Ha)s, AI(i-Ca
He)s! AI (i-C, H a), AI (C, H
,),.

AI (QC4H,), etc. can be cited as examples of those that can be effectively used. Further, these raw material gases for supplying A1 may be diluted with gases such as Hz, He, Ar, Ne, etc., as necessary.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4 and Si2Ha.

5isHs, Si, H,. Silicon hydrides (silanes) in a gaseous state or that can be gasified are mentioned as those that can be effectively used.
SiH4 and Sit Hs are preferred in terms of good supply efficiency and the like. In addition, these raw material gases for Si supply may be converted into H21He + Ar as necessary.
*It may be used after being diluted with a gas such as Ne.

Substances that can be used as raw material gas for hydrogen supply used in the present invention include H2, 5IH4, 5i2H
a, Sls Ha, 514H+.

Silicon hydrides (silanes) such as the following are mentioned as those that can be effectively used.

In the present invention, the amount of hydrogen atoms contained in the lower layer can be controlled by, for example, controlling the flow rate and/or support temperature and/or discharge power of the raw material gas for hydrogen supply. .

In order to structurally introduce atoms (CNOc) that adjust image quality into the lower layer, such as carbon atoms (C), nitrogen atoms (N), or oxygen atoms (0), carbon atoms ( C) A raw material for introduction, a raw material for nitrogen atom (N) introduction, or a raw material for oxygen atom (0) introduction in a gaseous state in a deposition chamber together with other raw materials for forming the lower layer. It would be good to introduce it. carbon atom (C)
Materials that can be used as the raw material for introduction, the raw material for nitrogen atom (N) introduction, or the raw material for oxygen atom (0) introduction include those that are gaseous at room temperature and pressure, or that are easily formed under layer-forming conditions. It is desirable to use a material that can be gasified.

Starting materials that can be effectively used as raw material gases for introducing carbon atoms (C) include saturated hydrocarbons containing C and H as constituent atoms, such as saturated hydrocarbons having 1 to 4 carbon atoms, and saturated hydrocarbons having 2 to 4 carbon atoms.
Examples include ethylene hydrocarbons, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like.

Specifically, the saturated hydrocarbon is methane (CH,)
, ethane (C2H,), propane (CsHs), n-butane (nCaH+o).

Pentane (C, H, 2), ethylene hydrocarbons include ethylene (C, H,), propylene (C, H6), butene-1 (C4H,), butene-2 (C, H,), in Butylene (C4Hs).

Pentene (C, H, .), acetylene hydrocarbons such as acetylene (C, H,), methylacetylene (C, H
4), butyne (C4H,), and the like.

As a raw material gas containing Si, C, and H as constituent atoms, S
i (CHs) 4, 8 i (C2H6) 4
Examples include alkyl silicides such as.

In addition to this, CF4. CCl4
．． Listing halogenated carbon gases such as CH, CF, etc.
Can be done.

Raw materials that can be effectively used as raw material gases for introducing nitrogen atoms (N) include nitrogen (N, ), which has N as a constituent atom, or has N and H as constituent atoms,
Ammonia (NH,).

hydrazine (H2NNH,), hydrogen azide (HN3),
Gaseous or gasifiable nitrogen such as ammonium azide (NH,N, ), nitrogen compounds such as nitrides and azides may be mentioned.

In addition to this, nitrogen trifluoride (F
, N), nitrogen tetrafluoride (F4N, ), and other halogenated nitrogen compounds.

Starting materials that can be effectively used as raw material gases for introducing oxygen atoms (0) include, for example, oxygen (0',),
Ozone (0,), -nitrogen oxide (No), nitrogen dioxide (N
o, ), -nitrogen dioxide (N, O), nitrogen sesquioxide (N
, O, ), trinitric oxide (N, 04), nitrogen sesquioxide l
xOs).

For example, nitrogen trioxide (No), whose constituent atoms are a silicon atom (Si), an oxygen atom (○), and a hydrogen atom (H),
Disiloxane (Hs Si OS i H8).

Trisiloxane (HI S t O3I H20S t
Examples include lower siloxanes such as H3).

In order to structurally introduce atoms (M c ) that adjust image quality into the lower layer, for example, group II atoms, group V atoms, or group Vl atoms, group If a raw material for introduction, a raw material for introducing Group V atoms, or a raw material for introducing Group VI atoms is introduced into the deposition chamber in a gas state together with other raw materials for forming the lower layer. good. Materials that can be used as raw materials for introducing Group II atoms, raw materials for introducing Group V atoms, or raw materials for introducing Group Vl atoms may be gaseous at normal temperature and pressure, It is preferable to use substances that can be easily gasified under certain conditions.Specifically, as raw materials for introducing group Ⅰ atoms, B, H, etc. are used for introducing boron atoms.

B.H. + Bs Hs + Bs Hll,
Boron hydride, BF, such as Bs HlolB, H,, B, H,, etc.

Examples include boron halides such as BCl3 and BBrs. Kono et al., AlCl5, GaC15, Ga(CH3
)3, InC15, TlC18, etc. may also be mentioned.

In the present invention, effective raw materials for introducing Group V atoms include PH,
Hydrogen north neighbor such as P2H4, PH, I.

PF3, PFa, PClm, PCIn,,PB
rs.

Examples include halogen ratios such as PBr, PI, and the like. In addition, ASHs, AsF5, AsC15.

AsBr3. AsF, 5bHa', SbFm.

5bFs, 5bC1s, 5bC1s, BiHs
.

B iCI s , B I B r s and the like may also be mentioned as effective starting materials for the introduction of group V atoms.

Hydrogen sulfide (H
,S),SF,,SF,,SO2,SO,F,.

CO3, C8,, CH, 5HC2H, S H, C4H4
S.

Mention may be made of gaseous or gasifiable substances such as (CH; ) 2 S (Ci Hs ) 2 'S. In addition, SeH2,5eF8. (CH3)2Se
, (c2Hs)2Se,TeHz,T
eFe, (CH3)2Te, (C2HB)2
Mention may be made of gaseous or gasifiable substances such as Te.

Further, the raw material for introducing atoms (Mc) for controlling image quality may be diluted with a gas such as H2+ He IAr or Ne as necessary.

The thickness of the lower layer in the present invention is determined to be 00OO3 from the viewpoint of obtaining desired electrophotographic properties and economical effects.
~5 μm 1 preferably 0.01 to 1 μm 1 optimally 0.01 to 1 μm 1 .
It is desirable that the thickness be 0.05 to 0.5 μm.

In addition, in the present invention, the end face of the lower layer with the aluminum support is the aluminum atom (A1) of the lower layer.
This is a region in which the content of aluminum atoms (A1) is 95% or less of the content of aluminum atoms (A1) in the aluminum-based support.

This is because in a composition region where the content of aluminum atoms (A1) exceeds 95% of the content of aluminum atoms (AI) in the aluminum-based support, its function is almost solely as a support. . Furthermore, the end face of the lower layer with the upper layer is a region where the content of aluminum atoms (A1) in the lower layer exceeds 5%.

This is because in a composition range where the content of aluminum atoms (AI) is 5% or less, its function is almost only that of an upper layer.

In order to form a lower layer made of Al5iH having characteristics that can achieve the object of the present invention, it is necessary to appropriately set the gas pressure in the deposition chamber and the temperature of the support as desired.

The optimum range of the gas pressure in the deposition chamber is appropriately selected according to the layer design, but is usually between 1X10-' and 10 Torr, preferably between IX10-' and 3 Torr.

Optimally, it is preferable to set it to lXl0-' to ITorr.

The support temperature (Ts) is suitably selected in an optimal range according to the layer design, but it is usually desirably 50 to 600°C, preferably 100 to 400°C.

In the present invention, when the lower layer made of AIS i H is created by the glow discharge method, the optimal range of discharge power supplied into the deposition chamber is selected as appropriate according to the layer design, but normally it is 5X10-' to 10W. /crrf, preferably 5 x 10-' to 5 W/crd, optimally I x 10'' to 2 x 10-'W/cm''.

In the present invention, the above-mentioned desirable numerical ranges for the gas pressure in the deposition chamber, the support temperature, and the discharge power supplied to the deposition chamber for creating the lower layer include the above-mentioned ranges, but these layer creation factors are usually are not determined independently and separately, but it is desirable to determine the optimum value of the lower layer forming factor based on mutual and organic relationships in order to form a lower layer having desired properties.

Upper” 1st layer The upper layer in the present invention is Non-8i (H.

X) and has desired photoconductive properties.

In the present invention, the upper layer in contact with at least the lower layer contains atoms (M) that control conductivity, including carbon atoms (C), nitrogen atoms (N), oxygen atoms (0),
Substantially neither germanium atoms (Ge) nor tin atoms (S n ) are contained. However, in other layer regions of the upper layer, atoms (M) controlling conductivity,
It may contain at least one of a carbon atom (C), a nitrogen atom (N), an oxygen atom (0), a germanium atom (Ge), and a tin atom (S n). In particular, the layer region near the free surface of the upper layer preferably contains at least one of carbon atoms (C), nitrogen atoms (N), and oxygen atoms (0).

The conductivity controlling atoms (M) contained in the layer region in contact with the lower layer may be uniformly distributed throughout the layer region, or may be distributed uniformly throughout the layer region. Evenly distributed (although it is contained, there may be a portion where it is distributed unevenly in the layer thickness direction. However, in any case, the surface parallel to the surface of the support In the inward direction, it is necessary that the content be uniformly distributed and evenly distributed in order to make the properties uniform in the in-plane direction.

Atoms (M), carbon atoms (C), nitrogen atoms (N), oxygen atoms (0), germanium atoms (Ge
), a tin atom (Sn), an atom (M) that controls the conductivity, a carbon atom (
C), nitrogen atoms (N), oxygen atoms (0), germanium atoms (Ge), and tin atoms (Sn) may be uniformly distributed throughout the layer region, or may be distributed uniformly throughout the layer region. Although it is contained evenly, there may be a portion where it is contained in a non-uniformly distributed state in the layer thickness direction. However, in any case, it is necessary that the content be uniformly distributed and evenly distributed in the in-plane direction parallel to the surface of the support, in order to make the properties uniform in the in-plane direction. .

Also, carbon atom (C) and/or nitrogen atom (N) and/or oxygen atom (0) (hereinafter [atom (CNO) J
(hereinafter referred to as "layer region (CNO)") containing a layer region (abbreviated as "layer region (CNO
) J) and a layer region (hereinafter abbreviated as "layer region (GS) J") containing germanium atoms (Ge) and/or tin atoms (Sn) (hereinafter abbreviated as "atomic (GS) J"). ) is a layer region (hereinafter abbreviated as "layer region (Me) The layer area may be shared in a part of the surface side.

In addition, a layer region (hereinafter abbreviated as "layer region (Mr) J") containing atoms (M) other than the layer region (Ms), and a layer region (M
), the layer region (Ma) are collectively abbreviated as "layer region (M)"), the layer region (CNO), and the layer region (GS),
The layer regions may be substantially the same, at least a part of each layer region may be shared, or each layer region may not be substantially shared.

17 to 36 show typical examples of the distribution state of atoms (M) contained in the layer region (M) in the layer thickness direction in the upper layer of the electrophotographic light-receiving member of the present invention. A typical example of the distribution state of atoms (CNO) contained in the layer region (CNO) in the layer thickness direction, atoms contained in the layer region (GS) (
GS) shows a typical example of the distribution state in the layer thickness direction. (Hereinafter, the layer region (M), layer region (CNO), and layer region (GS) will be referred to as "layer region (Y)" and atoms (
M), atom (CNO), and atom (GS) are represented by "atom (Y)". Therefore, FIGS. 17 to 36 show typical examples of the distribution state of atoms (Y) contained in the layer region (Y) in the layer thickness direction. (M), layer region (CNO), and layer region (GS) are substantially the same layer region, the layer region (Y) is included singularly in the upper layer, and is substantially the same layer region. If there is no layer region (Y), a plurality of layer regions (Y) are arranged in the upper layer).

17 to 36, the horizontal axis shows the distribution concentration C of atoms (Y), the vertical axis shows the layer thickness of the layer region (Y), and tB
indicates the position of the end face of the layer region (Y) on the lower layer side, and JjT indicates the position of the end face of the layer region (Y) on the free surface side. That is,
The layer region (Y) containing atoms (Y) is tT from the t8 side.
layered towards the sides.

Figure 17 shows atoms (Y) contained in the layer region (Y).
A first typical example of the distribution state in the layer thickness direction is shown.

In the example shown in FIG. 17, the distribution concentration C of the contained atoms (Y) is the concentration C1 from position t to position t7.
A distribution state is formed in which the concentration gradually and continuously increases from 2, and reaches the concentration C and a at the position t7.

In the example shown in FIG. 18, the distribution concentration C of the contained atoms (Y) increases numerically from the concentration C1□ for one hour from position 1++ to position tIII, and reaches the concentration C182 at position t181, A distribution state is formed that takes a constant value of density C1 from position ty to position ty.

In the example shown in FIG. 19, the distribution concentration C of the contained atoms (Y) is a constant value of concentration CIll from position t8 to position t1,1, and from position t191 to position t+*z. The concentration increases gradually and continuously from up to C19, until the concentration reaches C1,2 at position t192,
Position t19. A distribution state is formed that takes a constant value of concentration C19 up to position 11.

In the example shown in FIG. 20, the distribution concentration C of the contained atoms (Y) is from position t to position t. The concentration becomes a constant value C3° until it reaches 1, and from position t2°1 to position t
,. The density becomes a constant value of C3°2 until reaching the position t. , a distribution state is formed in which the concentration takes a constant value of C3° up to position tT.

In the example shown in FIG. 21, the distribution concentration C of the contained atoms (Y) is from the position t to the concentration C211 up to the position t7.
A distribution state is formed such that the value is a constant value.

In the example shown in FIG. 22, the distribution concentration C of the contained atoms (Y) is from position t to position t.

Until then, the concentration takes a constant value of C2,1, and at position t221
A distribution state is formed in which the concentration gradually and continuously decreases from C222 until reaching position tA, and reaches C22 at position tT.

In the example shown in FIG. 23, the distribution concentration C of the contained atoms (Y) is the concentration C from position tll to position 11.
A distribution state is formed in which the concentration gradually and continuously decreases from 1 to a concentration C0 at position ta.

In the example shown in FIG. 24, the distribution concentration C of the contained atoms (Y) is from position t to position that, which is the concentration C2.
4, take a constant value and move from position t241 to position 11
It gradually and continuously decreases from the concentration C34 until reaching .
A distribution state in which the distribution concentration C is substantially zero at position t7 (substantially zero here means the case where the amount is less than the detection limit, and the meaning of "substantially zero" hereinafter is also the same). is formed.

In the example shown in FIG. 25, the distribution concentration C of the contained atoms (Y) is the concentration C2 from position t to position tT.
, 1, the distribution concentration C gradually and continuously decreases to substantially zero at position 11.

In the example shown in FIG. 26, the distribution concentration C of the contained atoms (Y) is from position t to position t3,1, which is the concentration C3.
, , and the position t,6. The concentration decreases in a linear function from C261 until it reaches position tT, and then reaches position t? A distribution state is formed such that the concentration C1, .

In the example shown in FIG. 27, the distribution concentration C of the contained atoms (Y) is the concentration C1 from position t to position 11.
A distribution state is formed in which the distribution concentration C decreases linearly from 7+ and becomes substantially zero at position t7.

In the example shown in FIG. 28, the distribution concentration C of the contained atoms (Y) is from position t to position t2.1.
The density C3, . . . takes a constant value of 81 and decreases in a -order function from position t2.1 to position 11.
A distribution state is formed such that the concentration is C38 in A.

In the example shown in FIG. 29, the distribution concentration C of the contained atoms (Y) is the concentration C2 from position t to position t7.
, 1 gradually and continuously decreases, forming a distribution state such that the concentration C2, , is reached at position ta.

In the example shown in FIG. 30, the distribution concentration C of the contained atoms (Y) is from position t to position t3°1, where the concentration C1 is
A distribution state is formed in which the concentration takes a constant value of 1°, decreases in a linear function from the concentration C802 from the position tjot to the position ta, and becomes the concentration C3° at the position ta.

In the example shown in FIG. 31, the distribution concentration C of the contained atoms (Y) increases gradually and continuously from the concentration Call from the position t3 to the position ts+□, and at the position t all, the concentration C□, Then, from the position i s++, the position t
Up to 7, a distribution state is formed in which the concentration CS1m is a constant value.

In the example shown in FIG. 32, the distribution concentration C of the contained atoms (Y) is the concentration C8 from position t to position tT.
3, a distribution state is formed in which the concentration increases gradually and continuously to reach a concentration C822 at position t7.

In the example shown in FIG. 33, the distribution concentration C of the contained atoms (Y) is substantially zero from position t to position t3,1 (substantially zero here means less than the detection limit amount). (the meaning of "substantially zero" hereinafter is also the same), the concentration gradually increases to C181 at position t1,1, and the concentration C3,2 increases from position t3,1 to position tT.
A distribution state is formed that takes a certain value.

In the example shown in FIG. 34, the distribution concentration C of the contained atoms (Y) gradually increases from substantially zero from position t to position t'r, and at position tT, the concentration C34,
The distribution state is formed as follows.

In the example shown in FIG. 35, the distribution concentration C of the contained atoms (Y) increases linearly from the concentration Cssl from the position t to the position t 8111, and then increases from the concentration Cssl to the position t 1g.
From 1 to position ta, a distribution state is formed in which the concentration takes a constant value of C0°.

In the example shown in FIG. 36, the distribution concentration C of the contained atoms (Y) is from position t to position 1T, the concentration C36,
- increasing exponentially to the concentration Cs at position t7
A distribution state such as a□ is formed.

Examples of the atoms (M) that control the conductivity include so-called impurities in the semiconductor field. (abbreviated as "group atom") or n
Periodic table V excluding the nitrogen atom (N) which gives type conductivity properties
(hereinafter abbreviated as "Group V atoms") and oxygen atoms (0) (atoms belonging to Group Ⅰ of the periodic table (
Hereinafter abbreviated as "Group I atoms") will be used. Specific examples of the Group II atoms include B (boron), AI (aluminum), Ga (gallium), In (indium), and TI (thallium), with B, AI, and Ga being particularly preferred.

Specifically, Group V atoms include P (phosphorus), As (arsenic), Sb (antimony), and Bi (bismuth).
etc., with P and As being particularly suitable. Specifically, the Group Ⅰ atoms include S (sulfur), Se (selenium), Te
(tellurium), Po (boronium), etc., especially S, S
e is preferred. In the present invention, the atoms (M) controlling conductivity in the layer region (M) are group (III) atoms or group (III) atoms.
The effect of mainly controlling the conductivity type and/or conductivity and/or the ability to inject charge or prevent charge injection between the layer region (M) and the lower layer by including the group atom or the group I atom The effect of selectively controlling or improving the properties and/or the effect of improving the charge injection properties between the layer region (M) and layer regions other than the layer region (M) of the upper layer can be obtained. The content of atoms (M) that control conductivity contained in the layer region (M) is preferably lXl0-'' to 5 x 104 atomic ppm, more preferably 1 x 10 to lXl0' atoms pI) m%. Optimally lXl
Preferably, it is between 0-' and 5X10'' atomic ppm.

In particular, in the layer region (M), carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (0
) is less than lXl0'' atoms ppm, the content of atoms (M) that control conductivity contained in the layer region (M) is preferably lXl0-'' to IX1o
, 7: Desirably in atomic ppm, carbon atom (C
) and/or nitrogen atoms (N) and/or oxygen atoms (0) exceeds 1X10'' atoms ppm, the content of atoms controlling conductivity (M) is preferably 1 x 10- It is desirable that the content be 1 to 5 x 104 atomic ppm.

In the present invention, carbon atoms (C) are added to the layer region (CNO).
and/or by containing nitrogen atoms (,N) and/or oxygen atoms (0), mainly to increase dark resistance and/or hardness and/or to control spectral sensitivity and/or to control the layer region (CNO). The layer area of the upper layer (
It is possible to obtain the effect of improving the adhesion between layer regions other than CNO). The content of carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (0) contained in the layer region (CNO) is preferably 1 to 9.
xlO1' atoms ppm, more preferably lXl0'~5
X10' atoms ppm, optimally lXl0" ~ 3X10
'Preferably in atomic ppm. Especially when aiming for high dark resistance and/or high hardness, preferably 1×1
It is desirable to set it as 03-9X10' atomic ppm, and when controlling the spectral sensitivity, preferably 1x102-5
It is preferable that X10' atoms ppm.

In the present invention, by containing germanium atoms (Ge) and/or tin atoms (Sn) in the layer region (GS), it is possible to mainly control spectral sensitivity, especially when using a semiconductor laser or the like as an image exposure source of an electrophotographic device. It is possible to obtain the effect of improving long wavelength light sensitivity when using long wavelength light. Germanium atoms (G
e) and/or the content of tin atoms (S n) is preferably 1 to 9.5X10' atoms ppm5, more preferably 1x10' to 8xlO' atoms ppm, optimally 5X
Preferably, it is between 10" and 7X10' atomic ppm.

Further, hydrogen atoms (H) contained in the upper layer in the present invention
And/or halogen atoms (X) can compensate for dangling bonds of silicon atoms and improve layer quality. Hydrogen atoms (H) contained in the upper layer, or hydrogen atoms (
The total content of H) and halogen atoms (X) is preferably 1
x10s to 7X10' atoms ppm, and the content of halogen atoms (X) is preferably 1 to 4X1
It is desirable that the content be 0' atomic ppm.

In particular, the above-mentioned carbon atoms (C) and/or nitrogen atoms (N) and/or oxygen atoms (0) in the upper layer
If the content of
) is 1×10” to 4×10” atomic ppm
It is desirable that this is done. Furthermore, when the upper layer is composed of a polycrystalline material, hydrogen atoms (H) or hydrogen atoms (H) and halogen atoms (X
) is preferably 1X10" to 2X10" atomic ppm, and in the case of an amorphous structure, it is preferably 1x104 to 7X10' atomic ppm.
It is desirable that this is done.

In the present invention, the upper layer composed of Non-3i (H, The ink method, HRCVD method, and FOCVD method are suitable. These methods may be used in combination within the same device system.

For example, Non-8i (H
, X), basically a Si supply gas capable of supplying silicon atoms (Si);
H supply gas capable of supplying hydrogen atoms (H) and/or X supply gas capable of supplying halogen atoms (X), and M capable of supplying atoms (M) for controlling conductivity as necessary
Supply gas and/or C supply gas capable of supplying carbon atoms (C) and/or N supply gas capable of supplying nitrogen atoms (N) and/or C supply gas capable of supplying oxygen atoms (0) gas and/or germanium atoms (G
A Ge supplying gas capable of supplying e) and/or a Sn supplying gas capable of supplying tin atoms (Sn) are introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and into the deposition chamber. A glow discharge may be generated to form a layer made of Non-8i (H,

HRCVD method 1: ci, tte Non-8i (H,X)
Basically, to form the upper layer consisting of a Si supply gas that can supply silicon atoms (Si) and an M supply gas that can supply atoms (M) that control conductivity as necessary, C supplying gas and/or carbon atoms (C) and/or N supplying gas and/or nitrogen atoms (N)
A supply gas and/or a germanium atom (Ge) capable of supplying a supply gas and/or an oxygen atom (0)
Ge supply gas and/or tin atoms (
A Sn supplying gas capable of supplying Sn) is introduced at a desired gas pressure state into an activation space provided at the front stage of the deposition chamber, the interior of which can be reduced in pressure, separately or together as necessary, By generating glow discharge or heating in the activation space, active species (A) are generated, and N supply gas and/or halogen atoms (X) capable of supplying hydrogen atoms (H) are supplied. The halogen supplying gas that can be supplied is similarly introduced into another activation space to generate active species (B).
A) and active species (B) are separately introduced into the deposition chamber, and the Non-8i (
A layer consisting of H, X) may be formed.

To form the upper layer composed of Non-8i (H,
), an M supply gas that can supply atoms (M) that control conductivity as necessary, and /
or C supply gas capable of supplying carbon atoms (C) and/or N supply gas capable of supplying nitrogen atoms (N) and/or C supply gas capable of supplying oxygen atoms (0) and/or germanium G that can supply atoms (Ge)
Introducing e supply gas and/or Sn supply gas capable of supplying tin atoms (Sn), separately or together as necessary, at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure. Furthermore, halogen (X) gas is introduced into the deposition chamber at a desired gas pressure separately from the supply gas, and these gases are caused to undergo a chemical reaction within the deposition chamber, so that the halogen (X) gas is pre-installed at a predetermined position. A layer made of Non-8i (H, X) may be formed on the surface of a support on which a predetermined lower layer is formed in advance.

To form the upper layer composed of Non-8i (H,
It may be formed by a known method described in publications and the like.

In the present invention, when forming the upper layer, atoms (M) that control conductivity contained in the layer, carbon atoms (C), nitrogen atoms (N), oxygen atoms (0), germanium atoms (Ge
), tin atom (Sn) (hereinafter these will be collectively referred to as “atomic (
A desired distribution state (depth
In the case of the glow discharge method, HRCVD method, and FOCVD method, in order to form a layer having a profile), a raw material gas for supplying atoms (MCNOGS) whose distribution concentration is to be changed is controlled by adjusting the gas flow rate to a desired rate of change. This is accomplished by changing the curve as appropriate and introducing it into the deposition chamber.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow path system is changed as appropriate by any commonly used method such as manually or by an externally driven motor.

Substances that can be used as the Si supply gas used in the present invention include 5i)14,5i2)(6°5isH,,
5i4H+. Silicon hydride (silanes) in a gaseous state or that can be gasified, such as SiH4, etc., can be effectively used. S 12 Ha is preferred. Further, these raw material gases for supplying Si may be diluted with gases such as H2, He, Ar, Ne, etc. as necessary.

Effective halogen supply gases used in the present invention include poly(halogen compounds), such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, and other gaseous or gasified halogen compounds. Preferred examples include halogen compounds.

Furthermore, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, B r F, CIF, CIF, Br
F5. BrF5. IFs, IFy.

Interhalogen compounds such as ICI and IBr can be mentioned.

Specifically, silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, include S I F 4. S i 2 F s , S
Preferred examples include silicon halides such as iC14 and S t B r 4.

When a silicon compound containing such a halogen atom is used to form the characteristic electrophotographic light-receiving member of the present invention by a glow discharge method or an HRCVD method, silicon hydride gas is used as the Si supply gas. Even if not used, Non-8i (H+
) can be formed.

When forming an upper layer containing halogen atoms according to a glow discharge method or an HRCVD method, basically, the upper layer is formed on a desired support by using silicon halide, which is a gas for supplying Si. However, in order to further facilitate the introduction of hydrogen atoms, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be further mixed with these gases to form a layer. You may.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the halogen atom supply gas, but HF and HCI are also used.

Hydrogen halides such as HBr, HI, SiH, F.

5iHz Fz, 5iHFs, SiH, L+ SiH
2CI2, 5iHC1s, 5iHz Brt.

Gaseous or gasifiable substances such as halogen-substituted silicon hydrides such as 5iHBrs can also be mentioned as effective raw materials for forming the upper layer. Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer when forming the upper layer. In the present invention, it is used as a suitable halogen supply gas.

To structurally introduce hydrogen atoms into the upper layer, in addition to the above, H2, SiH4, S is He.

S I H Ha , S 14 H+. This can also be carried out by causing a discharge by causing silicon hydride such as and silicon or a silicon compound for supplying Si to coexist in a deposition chamber.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) that can be contained in the upper layer, for example, the support temperature and/or the inclusion of hydrogen atoms (H) or halogen atoms (X) The amount of raw material used for this purpose introduced into the deposition apparatus system, the discharge power, etc. may be controlled.

In order to structurally introduce atoms (M) that control conductivity into the upper layer, for example, group II atoms, group V atoms, or group II atoms, group A raw material for introduction, a raw material for introducing group V atoms, or a raw material for introducing group (III) atoms is placed in a gaseous state in a deposition chamber,
It may be introduced together with other raw materials for forming the upper layer. Materials that can be used as a raw material for introducing group (III) atoms, a raw material for introducing group (V) atoms, or a raw material for introducing group (III) atoms may be gaseous at room temperature and pressure, or at least under layer-forming conditions. It is desirable to use a material that can be easily gasified. Specifically, as raw materials for introducing such Group Ⅰ atoms, B, H, etc. are used for introducing boron atoms.

B4H,. ,B,H,,B,H,,,B,H,. ,B6
HIi B a Boron hydride such as HIa, BF, BC
l.

Examples include boron halides such as BBrs. In addition,
AI CIs, GaCIs, Ga (CHs
)s.

InC15, TlCl5, etc. can also be mentioned.

In the present invention, effective raw materials for introducing Group V atoms include PH,
Hydrogen ratio next to P, H4, etc., PH, I.

P F s , P F s + P C1s + P
C1s * P B r s.

Examples include halogen north neighbors such as PBrs and Pl. In addition, AsHs, AsF5, AsCIs +AsBr
5, AsFi, 5bHi, 5bFs.

5bFa, 5bC1s, 5bC1a, BiHs.

B i C1s, B i B r s, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

Hydrogen sulfide (H,
S), SF4. SF,,SQ,,So,F,.

CO8,' C8s, CHs SH, C2H5SH.

C, H4S, (CHI)! Examples include substances in a gaseous state or which can be gasified, such as S, (C,H,)iS, and the like. In addition, 5eHz, 5eFs, (CHs)iS e, (
Cz Hs ) * S e * T e H21T
e Fe + CCHs )s Te, (C2Hs )
Mention may be made of gaseous or gasifiable substances such as z Te.

In addition, the raw materials for introducing atoms (M) to control these conductivities may be H, He, Ar, etc. as necessary.

It may be used after being diluted with a gas such as Ne.

In order to structurally introduce carbon atoms (C), nitrogen atoms (N), or oxygen atoms (0) into the upper layer, a raw material for introducing carbon atoms (C) or nitrogen atoms must be used during layer formation. The raw material for introducing (N) or the raw material for introducing oxygen atoms (0) may be introduced in a gaseous state into the deposition chamber together with other raw materials for forming the upper layer. Raw material for introducing carbon atoms (C) or nitrogen atoms (N)
As a raw material for introduction or a raw material for introducing oxygen atoms (O), those that are gaseous at room temperature and pressure, or that can be easily gasified under layer-forming conditions are adopted. is desirable.

Starting materials that can be effectively used as raw material gases for introducing carbon atoms (C) include saturated hydrocarbons containing C and H as constituent atoms, such as saturated hydrocarbons having 1 to 4 carbon atoms, and saturated hydrocarbons having 2 to 4 carbon atoms.
Examples include ethylene hydrocarbons, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like.

Specifically, the saturated hydrocarbon is methane (CH,)
, ethane (C-Hs), propane (C.

H,), n-butane (n C4H+o) + pentane (
C6H,,), and ethylene hydrocarbons include ethylene (C, H,') and propylene (C, H,).

Butene-1 (C,H,), Butene-2 (C,H,).

Isobutylene (C,H,), pentene (C,H,.).

Acetylene (C.

H3), methylacetylene (C, H4), butyne (C4
Ha') and the like.

As a raw material gas containing Si, C, and H as constituent atoms, S
Alkyl silicides such as l (CHs )a + SL (Cl Hs )a can be mentioned.

In addition to this, CF4. CC1,
, CH, CF, and other halogenated carbon gases.

A raw material that can be effectively used as a raw material gas for introducing nitrogen atoms (N) is nitrogen (N,') having N as a constituent atom or N and H as constituent atoms.
, ammonia (NH,), hydrazine (H, NNH
2) Hydrogen azide (HNs).

Mention may be made of gaseous or gasifiable nitrogen such as ammonium azide (NH4N, ), nitrogen compounds such as nitrides and azides. In addition to this, in addition to introducing nitrogen atoms (N), halogen atoms (X) can also be introduced, so nitrogen trifluoride (F, N), nitrogen tetrafluoride (F, N
, ), etc. can be mentioned.

Starting materials that can be effectively used as raw material gases for introducing oxygen atoms (0) include, for example, oxygen (02), ozone (0,), and nitrogen oxide (No).

Nitrogen dioxide (N O, ), -nitrogen dioxide (N, O)
.

Nitric oxide (N, 0.’), trinitric oxide (N.

04), nitrogen sesquioxide (N=Oa), nitrogen trioxide (No
2), silicon atom (Si), oxygen atom (0), hydrogen atom (H) and constituent atoms, for example, disiloxane (Hs
S i O8i Ha ) + ) disiloxane (
Examples include lower siloxanes such as H3S i O8i Hz O8i Ha ).

Germanium (Ge) or tin atoms (
In order to structurally introduce Sn), a raw material for introducing germanium (Ge) or a tin atom (
S n) The raw material for introduction may be introduced in a gaseous state into the deposition chamber together with other raw materials for forming the upper layer. Materials that can be used as raw materials for introducing germanium (Ge) or for introducing tin atoms (Sn) include those that are gaseous at room temperature and pressure, or that can be easily gasified under layer-forming conditions. It is desirable that something be adopted.

As a material that can be a source gas for supplying Ge, GeH
4, Ges Ha , Ge, Hs , Ge4Hli G
es H12! Ge6)(,,,Get H161
G B a Hls, G e @ Hz. GeHa
Preferred examples include Get Hs and Ges Ha.

In addition, GeHF5, GeHa F, GeHsF
, GeHCla, GeHtC1z
, GeH.

CI, GeHBra, GeHzB
rz, GeHaBr, GeHIs, G
Hydrogenated germanium halides such as eHx I 2 and GeHs I, G e F 4゜GeC14, GeB
r4. Ge I4 , GeF2゜G e Cl z ,
Examples include germanium halides such as G e B r s and G e I z .

Substances that can be used as raw material gas for Sn supply include SnH.
4,5n2Ha,SnmHa,5n4HIo,S
n6 HI21 S n@ H141S nl H1
Gaseous or gasifiable tin hydride such as 4IS n @ H, @, S n g Hfor, etc. can be used effectively, especially since it is easy to handle during layer creation work and has good Sn supply efficiency. From these points of view, S n H4゜3 i'l 2 H6 and S n z Hs + are preferred.

In addition, S n HF s, S n Hx F x
, S n HsF, 5nHCj's, 5nHz
C1*, 5nHsC1, 5nHBrs, 5nHz
B I2.5nHsBr, 5nHI*, 5nH212
, 5nHs I, etc., SnF
a, S n Cfa.

SnBr4.5n14, 5nFz, 5nC1x.

Gaseous or gasifiable substances such as tin halides such as S n B r z , S n I z and the like can also be mentioned as useful starting materials for forming the upper layer.

The thickness of the upper layer in the present invention is 1 to 130 μm from the viewpoint of obtaining desired electrophotographic properties and economical effects.
m1 preferably 3-100 μm1 optimally 5-60 μm
It is desirable to do so.

Non-8i having characteristics that can achieve the purpose of the present invention
In order to form the upper layer consisting of (H,X), it is necessary to appropriately set the gas pressure in the deposition chamber and the temperature of the support as desired.

The optimum range of the gas pressure in the deposition chamber is appropriately selected according to the layer formation guideline, but in normal cases it is 1X10-' to 10 Torr, preferably IX10'4 to 3 Torr.

Optimally, it is preferable to set it to lXl0-' to ITorr.

The upper layer is Non-8i (H,X) and hydrogen atoms (H
) and/or A-3 containing a halogen atom (X)
i (hereinafter abbreviated as rA-8i (H, , 50 to 400°C, preferably 100 to 300°C.

The upper layer is non-8i (Hz X) and hydrogen atoms (
When polycrystalline silicon containing H) and/or halogen atoms (X) (hereinafter abbreviated as Jpoly-Si(H,X)J) is selected and constructed, various methods can be used to form the layer. There are several methods, such as the following.

One method is to increase the support temperature to a high temperature, specifically 40°C.
In this method, the temperature is set at 0 to 600° C., and a film is deposited on the support by plasma CVD.

Another method is to first form an amorphous film on the surface of a support, that is, to form a film on the support at a temperature of about 250° C. by plasma CVD, and then annealing the amorphous film. By doing po
This is a method of converting it into ly. The annealing treatment is performed by heating the support to 400 to 600° C. for about 5 to 30 minutes, or by irradiating it with laser light for about 5 to 30 minutes.

In the present invention, when the upper layer made of Non-3i (H, 5X 10-' ~10W/
cm", preferably 5x10-' to 5W/am"
, optimally lXl0-" ~ 2 X 10-'W/c
It is desirable to set it to m”.

In the present invention, the above-mentioned desirable numerical ranges for the gas pressure in the deposition chamber, the support temperature, and the discharge power supplied to the deposition chamber for creating the upper layer include the above-mentioned ranges, but these layer creation factors are usually It is preferable to determine the optimum value of the upper layer forming factor based on mutual and organic relationships, rather than being determined separately and independently.

〔Example〕

EXAMPLES The present invention will be explained in more detail with reference to Examples below, but the present invention is not limited thereto.

<Example 1> An electrophotographic light-receiving member of the present invention was formed by a radio frequency (hereinafter abbreviated as rRFJ) glow discharge decomposition method.

FIG. 37 shows a source gas supply device 1020 and a deposition device 100.
1 shows an apparatus for manufacturing an electrophotographic light-receiving member using an RF glow discharge decomposition method.

1071.1072, 1073, 1074.10 in the diagram
75,1076.1077 gas cylinder and 1078
The raw material gas for forming each layer of the present invention is sealed in the sealed container, and 1071 is SiHa gas (
1072 is a H, gas (purity 99.9999%) cylinder, 1073 is a CH, gas (purity 99°999%) cylinder, 1074 is PH diluted with H, gas (purity 99.999%, hereinafter referred to as rPH,
/H, J) cylinder, 1075 is B, H, gas diluted with H, gas (purity 99.999%, hereinafter rB
, H, /H2j), 1076 is a No gas (purity 99.9%) cylinder, and 1077 is a He gas (purity 99%) cylinder.
．． 999%) cylinder, 1078 is AlC1, (purity 99%)
．． 99%).

In the figure, 1005 is a cylindrical aluminum support, the outer diameter of which is 108 mm, and the surface of which is mirror-finished.

First, valves 1051 to 1077 of gas cylinders 1071 to 1077
1057, inflow valves 1031 to 1037, deposition chamber 10
After confirming that the leak valve 1015 of 01 is closed and that the outflow valves 1041 to 1047 and the auxiliary valve 1018 are open, first open the main valve 1016 and use the vacuum pump (not shown) to The deposition chamber 1001 and gas piping were evacuated.

Next, the vacuum gauge 1017 reads approximately 1X10-”T.

When rr is reached, auxiliary valve 1018 and outflow valve 1 are closed.
041-1047 closed.

After that, SiH4 gas from gas cylinder 1071, H2 gas from gas cylinder 1072, and C from gas cylinder 1073.
H, gas, PH, /H2 gas from gas cylinder 1074,
B, H, /H2 gas from gas cylinder 1075, N gas from gas cylinder 1076, He from gas cylinder 1077
Gas is introduced by opening valves 1051 to 1057, and the pressure of each gas is adjusted to 2 kg by pressure regulators 1061 to 1067.
/cm2.

Next, the inflow valves 1031 to 1037 are gradually opened to supply each of the above gases to the mass flow controllers 1021 to 1021.
It was introduced within the 27th. At this time, the mass flow controller 1027 receives the He gas from the gas cylinder 1077.
Since it passes through a closed container 1078 filled with lC1, AlC1 gas (hereinafter rA1c) diluted with He gas
1. /HeJ) is introduced.

Further, the temperature of the cylindrical aluminum-based support 1005 installed in the deposition chamber 1001 was heated to 250° C. by a heating heater 1014.

After the preparation for film formation was completed as described above, the lower layer and the upper layer were formed on the cylindrical aluminum support 1005.

To form the bottom layer, the outflow valves 1041°1042
．． 1046, 1047 and the auxiliary valve 1018 are gradually opened to supply SiH4 gas, H2 gas, A I C1s /
He gas is introduced into the gas discharge hole 1009 of the gas introduction pipe 1008.
It was made to flow into the deposition chamber 1001 through. At this time, Si
H4 gas flow rate is 508CCM, H gas flow rate is 1080CCM
0M, No gas flow rate is 5S CCM 1A I Cl
Each mass flow controller 1021, 1022 so that the s/He gas flow rate is 1203 CCM,
Adjusted at 1026°1027. The opening of the main valve 1016 was adjusted while checking the vacuum gauge 1017 so that the pressure inside the deposition chamber 1001 was 0.4 Torr. Thereafter, the power of an RF power source (not shown) is set to 5 mW/cm'', and the power is applied to the deposition chamber 100 through the high frequency matching box 1012.
Introducing RF power into 1 to generate an RF glow discharge,
Formation of the bottom layer was started on the cylindrical aluminum-based support. During the formation of the bottom layer, the SiH4 gas flow rate was 508CCM
.

H so that the No gas flow rate is a constant flow rate of 58CCM.
, AlCl, such that the gas flow rate increases at a constant rate from 10800M to 200SCCM.

/ The mass flow controllers 1021, 1022, 1026, 1027 were adjusted so that the He gas flow rate decreased at a constant rate from 120 SCCM to 40 SCCM, and the RF glow discharge was stopped when the lower layer with a layer thickness of 0.05 μm was formed. Outflow valve 1041, 1042, 1
046.1047 and auxiliary valve 1018 are closed;
The flow of gas into the deposition chamber 1001 was stopped, and the formation of the lower layer was completed.

Next, to form the first layer region of the upper layer, the outflow valves 1041, 1042, 1045 and the auxiliary valve 10
18 gradually open S I Ha gas, H, gas, B,
H, /H, gas to the gas discharge hole 10 of the gas introduction pipe 1008
09 into the deposition chamber 1001. At this time,
SiH, gas flow rate is 1001005CC, gas flow rate is 5
00SCCM, B, H, /H, the gas flow rate was adjusted to 200 ppm with respect to 5iHa using each mass flow controller 1021.1022.1025. The opening of the main valve 1016 was adjusted while checking the vacuum gauge 1017 so that the pressure inside the deposition chamber 1001 was 0.4 Torr. After that, the power of the RF power supply (not shown) was changed to 8 mW.
/ cm” and set the high frequency matching box 10.
12 into the deposition chamber 1001, R
RF glow discharge is generated, the formation of the first layer region of the upper layer is started on the lower layer, and when the first layer region of the upper layer with a layer thickness of 3 μm is formed, the RF glow discharge is stopped, and the outflow is started. Valves 1041, 1042, 1045 and auxiliary valve 1018 were closed to stop the flow of gas into deposition chamber 1001, completing the formation of the first layer region of the upper layer.

Next, to form the second layer region of the upper layer, the outflow valves 1041, 1042 and the auxiliary valve 1018 are gradually opened to supply the 5iHa gas, H, and gas to the gas inlet pipe 1008.
The gas was allowed to flow into the deposition chamber 1001 through the gas discharge hole 1009 . At this time, the S I H4 gas flow rate is 3003 CC
Mass flow controllers 1021 and 1022 were used to adjust the M, H, and gas flow rates to 3003 CCM. While checking the vacuum gauge 1017, adjust the pressure inside the deposition chamber 1001 to 0.5 Torr by turning the main valve 1016.
Adjusted the aperture. After that, the power of the RF power source (not shown) is set to 15 mW/cm", and the high frequency matching box 1
Introducing RF power into the deposition chamber 1001 through 012,
generating an RF glow discharge, starting to form a second layer region on the first layer region of the upper layer, and stopping the RF glow discharge when the second layer region of the upper layer with a layer thickness of 20 μm is formed; Further, the outflow valves 1041 and 1042 and the auxiliary valve 1018 were closed to stop the gas from flowing into the deposition chamber 1001, and the formation of the second layer region of the upper layer was completed.

Next, to form the third layer region of the upper layer, the outflow valves 1041 and 1043 and the auxiliary valve 1018 are gradually opened to introduce SiHa gas, CH, and gas into the gas inlet pipe 10.
08 into the deposition chamber 1001 through the gas discharge hole 1009. At this time, the S I H4 gas flow rate is 50SC.
Each mass flow controller 1021 and 1023 was adjusted so that the CM1CH4 gas flow rate was 5003 CCM. While checking the vacuum gauge 1017, turn the main valve 101 so that the pressure inside the deposition chamber 1001 is 0.4 Torr.
Adjusted the aperture of 6. Thereafter, RF power is introduced into the deposition chamber 1001 through a high frequency matching box 1012 in which the power of an RFII source (not shown) is set to 10 mW/crd, to generate an RF glow discharge, and to generate an RF glow discharge in the second layer region of the upper layer. Start forming the third layer region on top, layer thickness 0.5
Stop the RF glow discharge after forming the third layer region of the upper layer of μm, and also the outflow valve 1041.1043
Then, the auxiliary valve 1018 was closed to stop the gas from flowing into the deposition chamber 1001, and the formation of the third layer region of the upper layer was completed.

Table 1 shows the conditions for producing the above electrophotographic light-receiving member.

It goes without saying that the outflow valves for gases other than those necessary for forming each layer are completely closed, and
Each gas enters the deposition chamber 1001 and the outflow valve 104.
In order to avoid remaining in the piping from 1 to 1047 to the deposition chamber 1001, the outflow valves 1041 to 1047
, close the auxiliary valve 1018, and then fully open the main valve to temporarily evacuate the system to a high vacuum, as necessary.

During layer formation, the cylindrical aluminum support 1005 is rotated at a desired speed by a drive device (not shown) in order to ensure uniform layer formation.

<Comparative Example> An electrophotographic light-receiving member was produced under the same production conditions as in Example 1, except that Ht gas and NO gas were not used when forming the lower layer. Table 2 shows the conditions for producing this light-receiving member for electrophotography.

The produced electrophotographic light-receiving members of Example 1 and Comparative Example were set in an electrophotographic apparatus that was a modified Canon NP-7550 copier for experimental purposes, and several tests were carried out under various conditions. The electrophotographic properties were checked.

It was found that both of these electrophotographic light-receiving members have the characteristic of exhibiting extremely good charging ability, but when comparing the number of holes as an image characteristic, it was found that
It was found that the electrophotographic light-receiving member of Example 1 had a number of holes less than 3/4 of the electrophotographic light-receiving member of Comparative Example in terms of the number of holes of mm or less. Furthermore, in order to compare the degree of roughness, the image density was measured at 100 points with a circular area with a diameter of 0.05 mm as one unit.
When the variation in image density was evaluated, the electrophotographic light-receiving member of Example 1 had a variation that was less than 1/2 that of the electrophotographic light-receiving member of Comparative Example. It was found that the light-receiving member was superior to the electrophotographic light-receiving member of the comparative example.

In addition, in order to compare the degree of occurrence of image defects and layer peeling of the light-receiving layer due to relatively short-term impact mechanical pressure applied to light-receiving members for electrophotography, a diameter of 3.5 m was measured.
A stainless steel ball of 30 cm was dropped freely from 30 cm vertically above the surface of the electrophotographic light-receiving member and was applied to the surface of the electrophotographic light-receiving member to measure the probability of cracks occurring in the light-receiving layer. It was found that the electrophotographic light-receiving member had a probability of occurrence of 215 or less than the electrophotographic light-receiving member of the comparative example.

As seen above, the electrophotographic light receiving member of Example 1 was found to be comprehensively superior to the electrophotographic light receiving member of Comparative Example.

<Example 2> In the lower layer of Example 1, A I 01 s / He
Electrophotographic light-receiving members were produced in the same manner as in Example 1 under the production conditions shown in Table 3 by changing the way the gas flow rate changed, and the same evaluation was performed.
A good effect of improving roughness and layer peeling was obtained.

<Example 3> In the upper layer of Example 1, CH and gas were not used, and the fourth
A light-receiving member for electrophotography was produced in the same manner as in Example 1 under the production conditions shown in the table, and the same evaluation was performed. As in Example 1, it was found to be good in terms of spots, roughness, and layer peeling. The effect was obtained.

<Example 4> In Example 1, the PH, /H2 gas cylinder was replaced with He gas (
(purity 99.9999%) into cylinders, He gas, N
An electrophotographic light-receiving member was prepared in the same manner as in Example 1 using o gas and N2 gas from a cylinder (not shown) under the preparation conditions shown in Table 5, and the same evaluation was conducted.
Similar to the above, good effects were obtained in improving burrs, roughness, and layer peeling.

<Example 5> In Example 1, the PH, /Ha gas cylinder was replaced with Ar gas (
Change the NO gas cylinder to an NH, gas (purity 99°999%) cylinder,
In the lower layer, AlC1,/He gas is mixed with A I (CH
= )s/He gas (purity 99.99%), C
H4 gas is further used, and in the upper layer H, gas is
An electrophotographic light-receiving member was prepared in the same manner as in Example 1 by changing R gas to NH gas and CH4 gas to NH gas under the preparation conditions shown in Table 6, and the same evaluation was performed. Similarly, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 6> Used for PH, /H2N2 gas etc. in the upper layer,
A light-receiving member for electrophotography was produced in the same manner as in Example 1 under the production conditions shown in the table, and the same evaluation was performed. As in Example 1, it was found to be good in terms of spots, roughness, and layer peeling. The effect was obtained.

<Example 7> In Example 1, PH, /H2N2 gas 2H8/H, gas, and SiF4 gas (not shown) (purity 99°999%) were further used, and under the production conditions shown in Table 8, Example 1 and A light-receiving member for electrophotography was similarly prepared and evaluated in the same manner. As in Example 1, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 8> In the lower layer, CH4 gas, B, H, /H, gas and not shown H, S gas (purity 99.9%) were further used, and in the upper layer, PH* / H2 gas, N , gas was further used, and Example 1 was prepared according to the preparation conditions shown in Table 9.
An electrophotographic light-receiving member was prepared in the same manner as in Example 1, and the same evaluation was performed. As in Example 1, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 9> In Example 1, the CH4 gas cylinder was replaced with a C2H2 gas (purity 99.9999%) cylinder, and C was added in the upper layer.
An electrophotographic light-receiving member was produced in the same manner as in Example 1 under the production conditions shown in Table 10 by changing H, gas to C, H, gas and further using He gas, and the same evaluation was performed. However, similar to Example 1, good effects were obtained that improved the effects on creases, roughness, and layer peeling.

<Example 10> An electrophotographic light-receiving member was produced in the same manner as in Example 1 under the production conditions shown in Table 11, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 11> In Example 1, CH and NH gas cylinders were used.

An electrophotographic light-receiving member was produced in the same manner as in Example 1, using a gas (purity 99.999%) cylinder and changing the CH gas to NH gas in the upper layer, and under the production conditions shown in Table 12. Similar evaluations were conducted, and as in Example 1, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 12> An electrophotographic light-receiving member was produced in the same manner as in Example 6, using SiFa gas in the upper layer of Example 6, and under the production conditions shown in Table 13, and the same evaluation was conducted. When this was carried out, similar to Example 6, good effects were obtained in improving dents, roughness, and layer peeling.

<Example 13> B, H, /H, gas, S 1zH6 gas (purity 99.99%) was further used in the upper layer, and the production conditions shown in Table 14 were used for electrophotography in the same manner as in Example 9. A light-receiving member was prepared and evaluated in the same manner as in Example 9. As in Example 9, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 14> PH, /H, gas is further used in the upper layer, and the first
An electrophotographic light-receiving member was produced in the same manner as in Example 11 under the production conditions shown in Table 5, and the same evaluation was performed.
As in Example 11, good effects were obtained to improve the effects on creases, roughness, and layer peeling.

<Example 15> In Example 1, the Bz H* / Hx gas cylinder was changed to a G e Ha gas (purity 99.999%) cylinder, and G e Ha gas was further used in the upper layer,
An electrophotographic light-receiving member was produced in the same manner as in Example 1 under the production conditions shown in Table 16, and the same evaluation was performed. Good effects were obtained.

<Example 16> In Example 1, the outer diameter of the cylindrical aluminum support was set to 80 mm, and an electrophotographic light-receiving member was prepared in the same manner as in Example 1 according to the preparation conditions shown in Table 17. Evaluations were conducted in the same manner as in Example 1, except that an electrophotographic device modified from a copying machine NP-9030 was used for the experiment, and as in Example 1, the problems with spots, roughness, and layer peeling were improved. Good effects were obtained.

<Example 17> In Example 1, the outer diameter of the cylindrical aluminum support was set to 60 mm, and an electrophotographic light-receiving member was produced in the same manner as in Example 1 under the production conditions shown in Table 18. Evaluations were conducted in the same manner as in Example 1, except that an electrophotographic device modified from a copying machine NP-1502 was used for the experiment, and as in Example 1, the problems with spots, roughness, and layer peeling were improved. Good effects were obtained.

<Example 18> In Example 1, the outer diameter of the cylindrical aluminum support was set to 30 mm, and an electrophotographic light-receiving member was prepared in the same manner as in Example 1 according to the preparation conditions shown in Table 19. Evaluations were conducted in the same manner as in Example 1, except that an electrophotographic device modified from the FC-5 copying machine was used for the experiment.
As in Example 1, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 19> In Example 1, the outer diameter of the cylindrical aluminum support was set to 15 mm, and a light-receiving member for electrophotography was prepared in the same manner as in Example 1 according to the preparation conditions shown in Table 20. Evaluations were carried out in the same manner as in Example 1, except that an electrophotographic apparatus prototyped in 1 was used, and as in Example 1, good effects were obtained in improving marks, roughness, and layer peeling.

<Example 20> In Example 16, the mirror-finished cylindrical aluminum support was further lathe-processed using a sword bit.
With a cross-sectional shape as shown in Figure 38, a=25μm5b=0.8
An electrophotographic light-receiving member was prepared using a cylindrical aluminum-based support having a diameter of μm under the same conditions as in Example 16.
As a result of the same evaluation as in Example 16, good effects were obtained in improving marks, roughness, and layer peeling.

<Example 21> In Example 16, the mirror-finished cylindrical aluminum support was subsequently exposed to a number of drops in the bearing application, resulting in countless dents on the surface of the cylindrical aluminum support. A so-called surface dimple treatment is applied to create a surface with a cross-sectional shape of 0250 μm and d as shown in Figure 39.
An electrophotographic light-receiving member was prepared under the same conditions as in Example 16 using a cylindrical aluminum-based support having a diameter of 1 μm, and was evaluated in the same manner as in Example 16. Good effects were obtained to improve the appearance of spots, roughness, and layer peeling.

<Example 22> In Example 9, the temperature of the cylindrical aluminum support was 500° C., and the upper layer was made of po 1 y-8i (H,X) for electrophotography according to the preparation conditions shown in Table 21. A light-receiving member was prepared in the same manner as in Example 9 and evaluated in the same manner as in Example 9. As in Example 9, good effects were obtained in improving spots, roughness, and layer peeling.

<Example 23> An electrophotographic light-receiving member of the present invention was formed by a microwave (hereinafter abbreviated as "μW") glow discharge decomposition method.

The deposition apparatus 1000 of the production apparatus for the RF glow discharge decomposition method shown in FIG. 37 is replaced with the deposition apparatus 1100 for the μW glow discharge decomposition method shown in FIG.
An apparatus for manufacturing an electrophotographic light-receiving member by the μW glow discharge decomposition method shown in FIG.

In the figure, 1107 is a cylindrical aluminum support, the outer diameter of which is 108 mm, and the surface of which is mirror-finished.

First, as in Example 1, the inside of the deposition chamber 1101 and the gas piping were evacuated until the pressure in the deposition chamber 1101 reached 5×10 −′ Torr.

Thereafter, in the same manner as in Example 1, each gas was introduced into mass flow controllers 1021 to 1027. However, PH,
/H, a 5tF4 gas cylinder was used instead of the gas cylinder.

Further, the temperature of the cylindrical aluminum-based support 1107 installed in the deposition chamber 1101 was heated to 250° C. by a heating heater (not shown).

After the preparation for film formation was completed as described above, the lower layer and the upper layer were formed on the cylindrical aluminum support 1107. To form the bottom layer, drain valve 1
041, 1042° 1045, 1046, 1047 and the auxiliary valve 1018 are gradually opened to supply SiH4 gas, H
, gas, B, H, /H, gas, NO gas, AlCl.

/He gas was flowed into the plasma generation region 1109 through a gas discharge hole (not shown) of the gas introduction pipe 1110.

At this time, the SiH4 gas flow rate was 150 SCCM, 1Ejl120 SCCM, N.

Gas flow jll is 10SCCM, B, i(, /H, is S
Each mass flow controller 1021.1022°1025.102 was adjusted so that the AlCl5/He gas flow rate was 4008 CCM and 50 ppm for iH4 gas.
Adjusted with 6.1027. The pressure inside the deposition chamber 1101 is
The opening of the main valve (not shown) was adjusted so that the pressure was 0.6 mTorr while checking the vacuum gauge (not shown). Thereafter, the power of a μW power supply (not shown) is set to 0.5 W/cm", and μW power is introduced into the plasma generation region 1109 through the waveguide 1103 and the dielectric window 1102 to generate a μW glow discharge, resulting in a cylindrical shape. Formation of the lower layer on the aluminum-based support 1107 was started.

During the formation of the bottom layer, the S I Ha gas flow rate was 1508 CC
M, NO gas flow Jul;! 10SCCMSB.

H, /H, gas flow rate is 50p for S I Ha gas
H, gas flow rate is 20SC to maintain a constant flow rate of pm.
The AlCl,/He gas flow rate increased at a constant rate from CM to 500 sccm, the AlCl,/He gas flow rate decreased at a constant rate from 4008 CCM to 80 SCCM at 0.01 μm on the support side, and from 80 SCCM to 50 SCCM at 0.01 μm on the upper layer side. Mass flow controller 1021.1022°102'5,1 so that it decreases at a constant rate.
026.1027, and when a lower layer with a layer thickness of 0.02 μm was formed, the μW glow discharge was stopped, and the outflow valves 1041°1042.1045, 1046.10
47 and the auxiliary valve 1018 were closed to stop the flow of gas into the plasma generation region 1109, and the formation of the lower layer was completed.

Next, to form the first layer region of the upper layer, the outflow valves 1041, 1042, 1045 and the auxiliary valve 10
18 gradually open SiHa gas, H2 gas, B, H
, /H2 gas was flowed into the plasma generation space 1109 through a gas discharge hole (not shown) of the gas introduction pipe 1110.

At this time, the SiH4 gas flow rate is 100S1005CC gas flow rate is 500SCCM, B, H, /H, and the gas flow rate is S
Each mass flow controller 1021゜1022.1
Adjusted with 025. The pressure inside the deposition chamber 1101 is 0.5
It was adjusted to be mTorr. After that, μ (not shown)
Reduce the power of the W power supply to 0. 5 W/cm'' to generate a μW glow discharge in the plasma generation chamber 1109 in the same way as for the lower layer, to start forming the first layer region of the upper layer on the lower layer, and to form a first layer region of the upper layer with a layer thickness of 3 μm. A first layer region of the layer was formed.

Then to form the second layer region of the upper layer, the outflow valves 1041, 1042, 1044 and the auxiliary valve 101
8 gradually open S I H4 gas, H, gas, S I
F a gas was flowed into the plasma generation space 1109 through a gas discharge hole (not shown) of the gas introduction pipe 1110 .

At this time, the SiH4 gas flow rate is 7003 CCMSH! Gas flow rate is 500SCCMSS i F4 gas flow rate is 303C
Each mass flow controller 10 to be CM
Adjusted with 21.1022.1024. Deposition chamber 1101
The internal pressure was 0.5 mTorr. Thereafter, the power of a μW power source (not shown) is set to 0.5 W/cm'' to generate a μW glow discharge in the plasma generation region 1109, and an upper layer with a layer thickness of 20 μm is formed on the first layer region of the upper layer. A second layer region was formed.

Next, to form the third layer region of the upper layer, the outflow valves 1041 and 1043 and the auxiliary valve 1018 are gradually opened to supply SiH4 gas and CH4 gas to the gas inlet pipe 111.
Plasma generation space 11 through gas discharge holes (not shown)
It was leaked in 2009. At this time, the SiH4 gas flow rate was 150
8CCM.

Each mass flow controller 1021° and 1023 was adjusted so that the CH4 gas flow rate was 5008 CCM.

The pressure inside the deposition chamber 1101 was 0.3 mTorr.

After that, the power of the μW power supply (not shown) is increased to 0.5W/crrr.
A μW glow discharge was generated in the plasma generation region 1109, and a third layer region of the upper layer having a layer thickness of 1 μm was formed on the second layer region of the upper layer.

Table 22 shows the conditions for producing the above electrophotographic light-receiving member.

This electrophotographic light-receiving member was evaluated in the same manner as in Example 1, and as in Example 1, good effects were obtained in improving spots, roughness, and layer peeling. .

<Example 24> An electrophotographic light-receiving member was produced in the same manner as in Example 29 under the production conditions shown in Table 23, and the same evaluation was performed. A good effect was obtained that improved the results.

(Example 25) An electrophotographic light-receiving member was produced in the same manner as in Example 10 under the production conditions shown in Table 24, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 26> An electrophotographic light-receiving member was produced in the same manner as in Example 11 under the production conditions shown in Table 25, and the same evaluation was performed. A good effect was obtained, which improved the results.

<Example 27> An electrophotographic light-receiving member was produced in the same manner as in Example 12 under the production conditions shown in Table 26, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 28> An electrophotographic light-receiving member was produced in the same manner as in Example 13 under the production conditions shown in Table 27, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 29> An electrophotographic light-receiving member was produced in the same manner as in Example 14 under the production conditions shown in Table 28, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 30> An electrophotographic light-receiving member was produced in the same manner as in Example 4 under the production conditions shown in Table 29, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 31> An electrophotographic light-receiving member was produced in the same manner as in Example 6 under the production conditions shown in Table 30, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 32> An electrophotographic light-receiving member was produced in the same manner as in Example 12 under the production conditions shown in Table 31, and the same evaluation was performed. A good effect was obtained that improved the results.

<Example 33> An electrophotographic light-receiving member was produced in the same manner as in Example 31 under the production conditions shown in Table 32, and the same evaluation was performed. A good effect was obtained that improved the results.

Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Table 20 Table 21 Table 22 Table 23 Table 24 Table 25 Table 26 Table 27 Table 28 Table 29 Table 30 Table 31 Table 32 [Effects of the invention] By making the electrophotographic light-receiving member of the present invention have the specific layer structure as described above, all the problems in the conventional electrophotographic light-receiving member composed of A-3i can be solved, and in particular, Extremely excellent electrical and optical properties,
Indicates photoconductive properties, image properties, durability and use environment properties.

In particular, in the present invention, the lower layer contains aluminum atoms (AI), silicon atoms (Si), and especially hydrogen atoms (H) in a non-uniform distribution state in the layer thickness direction, and atoms ( By including CNOC), the injection property of charge (photocarrier) between the aluminum support and the upper layer is improved, and furthermore, the structural continuity of the constituent elements of the aluminum support and the upper layer is improved. Since the image quality is improved, image characteristics such as roughness and blur are improved, and high-quality images with clear halftones and high resolution can be stably and repeatedly obtained.

Furthermore, image defects and non-contamination may occur due to relatively short-term impact mechanical pressure applied to electrophotographic light-receiving members.
It prevents the occurrence of peeling of the 5i (H,
Alleviates stress caused by the difference in thermal expansion coefficient of n-3i (H,X) film, prevents cracks and peeling of Non-Si (H, be able to.

Furthermore, in the present invention, by containing atoms (M) that control conductivity in the layer region of the upper layer that is in contact with the lower layer, it is possible to improve the charge injection property or the charge injection blocking property between the upper layer and the lower layer. can be selectively controlled or improved, image characteristics such as roughness and blur can be further improved, and high-quality images with clear halftones and high resolution can be stably and repeatedly obtained. In addition, charging ability, sensitivity and durability are also improved.

[Brief explanation of drawings]

FIG. 1 is a schematic block diagram for explaining the layer structure of a light-receiving member for electrophotography according to the present invention. FIG. 2 is a schematic block diagram for explaining the layer structure of a conventional light-receiving member for electrophotography. , Figures 3 to 8 respectively show aluminum atoms (AI) contained in the lower layer and durability adjusting atoms (CNO).
c) , atoms (M
Figures 9 to 16 are explanatory diagrams of the distribution state of c), respectively, silicon atoms (Si), hydrogen atoms (H), atoms for adjusting durability (CNOC), and atoms contained as necessary in the lower layer. Figures 17 to 36 are explanatory diagrams of the distribution states of atoms (Mc) that adjust the image quality, respectively, of atoms (M) that control conductivity, carbon atoms (C) and /
or nitrogen atom (N) and/or oxygen atom (0),
Germanium atoms (Ge) and/or tin atoms (S
Fig. 37 is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method using RF, which is an example of an apparatus for forming the light-receiving layer of the electrophotographic light-receiving member of the present invention. , FIG. 38 is an enlarged view of the cross section of the aluminum support when the cross-sectional shape of the aluminum support is V-shaped when forming the electrophotographic light receiving member of the present invention, and FIG. 39 is an enlarged view of the cross section of the support for forming the electrophotographic light receiving member of the present invention FIG. 40 is an enlarged view of a cross section of the support when the surface of the aluminum support is subjected to a so-called dimple treatment when forming a light-receiving member. FIG. FIG. 41 is a schematic explanatory diagram of a deposition apparatus using a microwave glow discharge method for forming a light-receiving layer of a light-receiving member for electrophotography according to the present invention. FIG. 2 is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. Regarding FIG. 1, 100...Light receiving member for electrophotography of the present invention 101...
・Aluminum support 102...Light-receiving layer 103...Lower layer 104...Upper layer 105...Regarding the free surface in FIG. 2, 200...Conventional light-receiving member for electrophotography 201...・
Aluminum support 202...Photosensitive layer 203 made of A-8i...Free surface In Fig. 37, 1000...Deposition device 1001 by RF glow discharge decomposition method...Deposition chamber 1005...Cylindrical Aluminum support 1008・
...Gas inlet pipe 1009...Gas discharge hole 1012...High frequency matching box 1014...
・Heating heater 1015...Leak valve 1016...Main valve 1017...Vacuum gauge 1018...Auxiliary valve 1020...Material gas supply device 1021-1027...Mass flow controller 1031-1037...Gas Inflow valve 1041-1
047...Gas outflow valve 1051-1057...
Valve 1061 to 1067 of raw material gas cylinder... Pressure regulator 1071 to 1077... Raw material gas cylinder 1078...
・Hermetically sealed container for raw materials In FIGS. 40 and 41, 1100...deposition device 1101 using microwave glow discharge method...deposition chamber 1102...dielectric window 1103...waveguide section 1107... Cylindrical aluminum support 1109
...Plasma generation region 1010...Gas introduction pipe '70 qth port 8th port 10th El "L2Q, LJ/ LI CI
IZ □Sa"' 1st I El Otoko 73 Zuka/20 7th mouth 387 3rd volume//I!70

Claims (5)

[Claims] (1) In a photoreceptive member having an aluminum-based support and a photoreceptive layer having a multilayer structure exhibiting photoconductivity on the support, the photoreception layer has at least aluminum atoms and silicon atoms as constituent elements from the support side. atom, hydrogen atom,
a lower layer made of an inorganic material containing atoms that adjust durability and having a portion containing the aluminum atoms, silicon atoms, and hydrogen atoms in a non-uniform distribution in the layer thickness direction; It is characterized by being made of a non-single crystal material containing at least one of atoms and halogen atoms, and comprising an upper layer containing atoms for controlling conductivity in a layer region in contact with the lower layer. Light receiving member. (2) The light-receiving member according to claim 1, wherein the atom that adjusts durability is at least one of a carbon atom, a nitrogen atom, and an oxygen atom. (3) The light-receiving member according to claim 1, wherein the atom that controls conductivity is an atom belonging to Group III of the periodic table. (4) The light-receiving member according to claim 1, wherein the atom that controls conductivity is an atom belonging to Group V of the periodic table, excluding nitrogen atoms. (5) The light-receiving member according to claim 1, wherein the atom that controls conductivity is an atom belonging to Group VI of the periodic table, excluding oxygen atoms.