JPS63274137A - Lighting equipment - Google Patents

Abstract

PURPOSE:To enable the second element to be observed in even intensity of illumination by a method wherein illumination light is led to the second element for irradiation through a single mode fiber from a space between a projection optical system and the second element such as a wafer not through the intermediary of said projection optical system. CONSTITUTION:Laser beams LSR are entered into a wafer WF through a single mode film SF. The single mode fiber SF is not subjected to any phase change and interference inside itself. Refractive index distribution type lenses SL are added to both sides of the single mode film SF while expander lenses EL are added to one side of SF. The refractive index distribution type lenses SL are designed so that the incident light may be collected efficiently to be led into the film SF for emitting it as parallel light. Later, the emitted light passes through the expander lenses EL as parallel light expanded into specified size. In such a constitution, an illumination optical system in high strength and even intensity of illumination can be realized.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a lighting device, and particularly to a lighting device that is applied to a device that observes an object with a transparent thin film on its surface, detects the information, and aligns the object. Regarding. A typical example of this type of apparatus is an alignment apparatus that is applied to a projection exposure apparatus that exposes a pattern onto a wafer in sections.

[Prior Art and Problems to be Solved by the Invention] Two basic performances of an exposure apparatus to which this type of alignment apparatus is applied are resolution and overlay accuracy. Regarding resolution, handling is very simple. This is because there are only a few parameters that determine resolving power, and in devices called steppers, the resolving power of the optical system can be easily estimated by knowing the wavelength used and the numerical aperture (NA) of the projection lens. Further, even in the case of X-ray exposure, there are only limited parameters such as penumbra blur due to the size of the light source.

Since the realization of single-transistor memory cells, advances in lithography, that is, fine line width printing technology, and advances in process technologies such as etching have played a role in achieving higher integration of semiconductors. In terms of resolution, optical systems have been steadily improving, as can be seen by tracing the history of stepper lenses. Optical systems have broken the 1 μm barrier, and lenses compatible with the submicron era are being announced one after another.

On the other hand, new ideas are being realized in the process, such as trenching methods, and the combination of lower and higher height differences based on three-dimensional RC concepts. The greatest point of contact between advances in resolution on the exposure equipment side and advances on the process side is the overlapping of patterns in each process. In this sense, it can be said that overlay accuracy is becoming increasingly important in exposure equipment.

It is difficult to express overlay accuracy using simple parameters such as resolution. This reflects the diversity of wafer processes, but it can also be attributed to the wide variety of configurations of alignment systems used for overlaying. What makes wafer process factors even more complex is that this problem is not limited to just one substrate, but also needs to be considered in conjunction with the photoresist coated on the wafer. One of the obvious trends in current semiconductor technology is the trend toward three-dimensional IC configurations. Among these, a high level difference on the surface of the sea urchin is unavoidable, but this high level difference has a clear negative effect on the coating condition of the photoresist. Furthermore, wafers are becoming increasingly larger from 6 inches to 8 inches and even 10 inches. When applying photoresist to a large-diameter wafer using a spin method, it is obvious that the state of resist application differs between the center and the periphery, and this difference becomes more pronounced as the level difference on the surface of the sea urchin increases. It is also clear that In fact, it is well known that the alignment state changes under the influence of resist coating, and research is being conducted on how to achieve uniform coating.

Another thing to keep in mind when it comes to photoresists is the trend toward multilayering in the submicron era. Since means for improving resolution, such as a multilayer resist process and CEL, are inevitably employed in several processes, countermeasures for this are also necessary. It can be said that exposure equipment is being forced to deal with these new wafer processes in the field of stacking.

On the other hand, the diversity of alignment systems is a testament to the flexibility and difficulty of system configuration.

Currently, no two alignment systems that have been proposed and implemented are the same, and each system has its own advantages and disadvantages. For example, one example is the exposure apparatus 1 disclosed in Japanese Patent Application Laid-Open No. 58-25638r filed by the present applicant. This system uses a projection optical system that is telecentric to both the reticle and the wafer.
This is one of the excellent configuration examples that realize the concept of nAxis. Although the projection lens has aberrations corrected for the g-line (436 nm), it is designed to exhibit similar performance at the wavelength of the 1e-Cd laser (442 nm). In one embodiment disclosed in this patent application, a laser beam scanning method using a He-Cd laser is adopted as an alignment signal detection method, and as a result, TTL on A
xis, that is, it is possible to start an immediate exposure operation in an aligned state. TTL on Axis
In the sense that the only error factor for an exposure apparatus is an alignment signal detection error, the S system has the configuration with the least systematic error factors, and is close to an ideal system. The only drawback to this system is that it is sensitive to processes that absorb wavelengths near the exposure wavelength, such as multilayer resists.

On the other hand, wavelengths other than the exposure wavelength, specifically e
line (548 nm) or He-Ne laser (633 nm)
Many system configuration examples using longer wavelengths such as +) have also been proposed. This system has the advantage of being robust against absorption-type processes such as multilayer resist because it uses a wavelength longer than the exposure wavelength. However, normally, the image height for alignment is fixed relative to the projection lens due to various chromatic aberrations of the projection lens, which introduces an error factor that involves moving the lens to the exposure position after alignment is detected. It turns out. For this reason, alignment systems using light other than the exposure wavelength are inevitably TT
This results in a LoffAxis system.

However, in recent years, requirements for overlay accuracy have become increasingly strict, and even detection errors in alignment signals, which are the cause of errors in ideal systems, as shown in Japanese Patent Application Laid-open No. 58-25638, have even become a problem. ing.

According to the inventors' analysis of the detection error component of the alignment signal, it has been found that the majority of the error component is due to problems in coating the photoresist. There are various error factors caused by the photoresist, but the following two factors are thought to be the largest among them.

The first is an interference effect between light reflected from the surface of the resist and light that passes through the resist, hits the substrate, and returns to the substrate. In particular, as described above, the photoresist is not necessarily coated uniformly within the wafer, and the coating state often differs between the center and the periphery. The substrate itself also has problems with wafer inwardness such as etching and sputtering. Therefore, when considering the resist coating, the structure of the alignment mark for each shot on the wafer differs depending on the location.
Therefore, the interference effects are also different. This interference seems to be the most significant cause of alignment errors due to the influence of resist coating.

The second factor is multiple reflection. The resist has the character of a leading wave path. Therefore, a portion of the light reflected from the substrate to the substrate is reflected at the interface between the resist and air, returns to the wafer, and is reflected again.

This effect becomes more pronounced as the reflectance of the substrate increases, and this multiple reflected light eventually causes interference and becomes a factor that deteriorates alignment accuracy.

Other resist factors can be considered, such as image deviation due to refraction, but these are only secondary factors, and alignment is achieved by eliminating the two factors mentioned above, especially the first interference effect. The analysis results confirmed that this greatly contributes to improving the accuracy of.

In order to solve the various problems mentioned above, the present applicant has already proposed ``Observation Apparatus'' in Japanese Patent Application No. 134873/1983. This is an observation device that projects a pattern on a first object, such as a reticle, onto a second object, such as a square, through a projection optical system. An optical system is disposed, and the observation optical system detects the position of the second object using illumination light applied from between the projection lens and the second object without going through the projection lens. By applying the above invention to an alignment device, it is possible to suppress the influence of resist and perform highly accurate alignment.

On the other hand, it has been found that there are various practical problems when applying the above invention, and solutions have been desired.

For example, when aligning, a mark placed on an object such as a square is illuminated, optically detected, and converted into an electrical signal.
Although alignment was performed based on the signal, there was a problem in that in order to perform highly accurate alignment, it was necessary to observe with non-uniform illumination and even illumination.

In view of the above-mentioned problems with the conventional method, it is an object of the present invention to make it possible to irradiate marks with non-uniform illumination light with a simple configuration, and thereby to achieve higher alignment accuracy. The object of the present invention is to provide an apparatus and an exposure apparatus using the same.

[Means and Operations for Solving the Problems] In order to achieve the above object, the present invention provides an apparatus for projecting a pattern drawn on a first object onto a second object via a projection optical system. In the illumination device for the second object, in order to illuminate the second object from between the projection optical system and the second object without going through the projection optical system, illumination light is transmitted to the second object by a single mode fiber. The light will be introduced above and irradiated.

Thereby, it is possible to observe the second object with non-uniform illumination without uneven illumination.

Furthermore, if a gradient index lens and an expander lens are installed at both ends of a single mode fiber, the incident light can be efficiently focused and introduced into the fiber, and then emitted as parallel light. Illumination with uniform illuminance distribution can be obtained. Further, if the position of the second object is detected by observing it through the projection optical system using illumination light from the illumination optical system that is incident on the second object, it is effective to improve the detection accuracy. Furthermore, when there is a plurality of illumination lights to be irradiated onto the second object, the optical path lengths are changed for the illumination lights in the directions that cause interference, and the projection optics as described above are used to make the illumination lights mutually non-interfering. If a method is adopted in which light is received via wafer illumination from outside the system and a projection optical system, and light other than the exposure wavelength is used as the wavelength of the wafer illumination light, the following light reception methods can be considered. .

(1) A method of simply placing the light receiving system after passing through the reticle (2) A method of installing a chromatic aberration correction optical system between the reticle and the projection optical system and placing the light receiving system after passing through the reticle (3) Reticle and the projection optical system A method of placing a mirror between the systems and receiving light without using a reticle (a chromatic aberration correction optical system is added) However, according to method (1), light of a wavelength that has not been corrected for the chromatic aberration of the projection optical system is In some cases, due to chromatic aberration, a large window must be provided in the reticle or the image may become blurred.

Furthermore, according to method (2), since a small chromatic aberration correcting optical system has not been devised, there is a problem in that the exposure area is reduced or an escape mechanism is added to the chromatic aberration correcting optical system during exposure.

In method (3), since the reticle serving as a reference cannot be observed simultaneously with the wafer, the problem is how to take the reference. However, setting a temporary reference also has the advantage that alignment can be performed by knowing the positional relationship between the reticle and the temporary reference.

Here, since the observation apparatus J of Japanese Patent Application No. 134873/1983 filed by the present applicant uses dark field illumination for the square, the problem is how to illuminate and observe the temporary reference.

As a method that does not illuminate or observe a temporary reference, it is possible to use a detection detector (for example, a COD screen) as a reference, but it is also possible to use an optical system that sets the screen size of the detection detector and magnification to improve accuracy. For reasons such as installing a pupil filter to improve the S/N ratio for detecting wafer marks, various optical systems are installed up to the reference detector, and the question of its stability is important for measuring the relative position with the reference. It becomes a problem.

Embodiments of the present invention that solve these problems will be described below with reference to the drawings.

FIG. 1 is a schematic diagram of the overall configuration of a semiconductor projection exposure apparatus to which an illumination device according to an embodiment of the present invention is applied. In the figure, the pattern drawn on the reticle LT is the illumination system L.
The illumination light P is projected onto the wafer WF placed on the XY stage WS via the projection optical system Po. At this time, the wafer WF is aligned with the reticle LT in advance, and by moving the XY stage WS, the wafer WF is aligned with the reticle LT.
F is placed at a predetermined automatic alignment (hereinafter referred to as AA) end position, and projection is performed at an appropriate position.

The flow of light rays during AA will be explained below.

First, the wafer illumination system WL is connected to the projection optical system PO and the wafer W.
From between F, the wafer WF is illuminated with light having a wavelength different from the wavelength of the illumination light that exposes the wafer WF, without going through the projection optical system PO. Wafer W illuminated by wafer illumination system WL
The image of F is taken into the detection optical system after the mirror M1 via the projection optical system PO.

In the detection optical system, the image of the wafer WF is passed through the chromatic aberration correction optical system OS, which corrects chromatic aberration caused by light having a different exposure wavelength passing through the projection optical system PO, to a reference mask whose relative position to the reticle LT is known. Image is formed on 8M. The optical system after the reference mask 8M is designed so that the mark on the reference mask 8M and the image of the wafer can be observed at the same time.

The image of the reference mark of the reference mask BM and the image of the wafer WF are divided into two by the roof prism DP via the objective lens L1 and the relay lens RL. The images that were further separated were each Erekta-Elx.

El, , reaches pupil filters FIX and FIY via mirrors M5X and M5Y. Mirrors M6x, M7x, which direct the image in a desired direction for position detection in the X direction,
It reaches the image scanning mirror (polygon mirror here) PM via M8x and erector E2x. The same applies to the Y direction, but the configuration of the mirror that directs the image to the desired direction for position detection in the Y direction is different.

Then, the reference mark of the reference mask BM and the image of the wafer WF are scanned by the polygon mirror PM, and f
Slits SLX, SLY through θ lenses L2X, L2Y
, and the image forms again here. Slit S Lx
, S Ly is provided with a band-shaped diaphragm, and the light transmitted through the band-shaped diaphragm is detected by detectors Dx and Dy. IFM is an interferometer that detects the position of the stage, IM is an interferometer mirror, and MO is an XY stage drive system.

The operation of AA will be explained below.

FIG. 2 is a diagram showing the position of the mark MKI on the wafer WF and the illumination direction DR of the wafer illumination light. Same figure (b)
is an enlarged view of the wafer mark part in FIG.
Three Y lights are arranged, and the wafer illumination light is incident on the four lights so that its direction is perpendicular or parallel to the wafer marks MKIX and MKIY. In addition, D
Illumination light in the RI and DR2 directions is wafer mark MK1
There is almost no reflection at x, and DR3 and DR
The illumination light in direction 4 is wafer mark MK1. Therefore, the illumination light in the directions of DRI and DR2 should be irradiated only around the wafer mark MK 1 y, and the illumination light in the directions DR3 and DR4 should be irradiated only around the wafer mark MKIX. It is said that In addition, each wafer illumination light is illuminated obliquely to the wafer WF, and its incident angle is relative to the maximum angle that the detection optical system has on the wafer for detecting the reflected light from the square shown in Figure 1. It has the following relationship.

(Maximum angle that the detection optical system has on the wafer +10°)≦(Incidence angle of illumination light to the square) The wafer mark image illuminated in this manner is formed on the reference mask 8M shown in FIG.

FIG. 3 is a diagram showing the arrangement of the illumination system of the reference mask BM and the arrangement of the reference mark MK and wafer mark image. In FIG. 5A, the wafer mark image passes through the window W of the reference mask BM and enters the objective lens L1. The reference mark portion of the reference mask BM is a transparent portion, for example, an opening made in the reference mask BM, and the reference mask illumination light is transmitted through the reference mark portion and becomes a reference mark image and enters the objective lens L1.

As a result, a reference mark signal with a good S/N ratio can be obtained.

The reference mark image and the image of the sea urchin are created using a roof prism as reference mark MKy, wafer mark MKIY image and reference mark MK x, wafer mark M K 1
It is separated into 1fJl parts.

Then, as shown in Fig. 1, the image extending in the X direction (for position detection in the Y direction) is rotated by 90'' by mirrors M5Y, M6Y, and M7Y and enters the polygon PM.
The image extending in the direction (for position detection in the X direction) is a mirror M5X
, MIX, M7x, and M8x reach the polygon PM without rotating unlike the former, and the slits SLX, 5LY1 . :
Form an image. In these X-direction and Y-direction optical systems,
Lenses Ll and RL are shared, and erector El,
and EIY%E2x and E2. are the same thing. These are optical systems that form images of each mark at a predetermined magnification.

As mentioned above, the marks in the X and Y directions arranged orthogonally to each other are separated by the roof prism DP, and one of the marks is further rotated by 90 degrees around the optical axis by the image rotation optical system to align the marks. It is now possible to scan with one polygon PM. It is clear that this is superior to the case where two polygons are prepared.

FIG. 4 is a diagram showing a reference mark image on a slit, a wafer mark image, a scanning direction, a slit shape, and an electric signal waveform detected from light transmitted through the slit. This is the first
The slits SLx and SLY in the figure are connected to the fθ lens L2. ,L2
It is a top view seen from the Y side.

The image formed on the slit SL is scanned by the polygon PM on the slit SL surface in the scanning direction indicated by the arrow in FIG. The slit SLY is provided with slits st, Y, , st, Y□, which are band-shaped transparent parts, and the slit SL
A slit 5LXI is similarly provided at x. The light transmitted through these slits is detected by detectors DX and DY and becomes electrical signal waveforms SY and SX. The relative position of the reference mark and wafer mark is measured using the obtained electrical signal waveform.

In addition, in FIG. 4, the detector D has each slit SLYl,
There are two in total, one behind SLY2 and one behind SLx+.

Since the relative positions of the reticle LT and the reference mask (reference mark) BM are known (for example, the reticle is aligned with the reference mask in advance), the reference mask can be queried by the amount of positional deviation between the reticle and the reference mask. By shifting and aligning, the reticle and wafer can be aligned as a result.

Next, the slit light receiving method will be explained.

In FIG. 4, slits corresponding to mark images MKy, MKly are SLy, SLa, respectively, and slits SL, 5LY2 are offset by a predetermined amount and formed on a single substrate. Behind the slits S Lvl, S L, and vz, one detector oy capable of receiving both light is arranged. Mark statue MK
, , MKIY is scanned in the direction of the arrow, first the signal S1 of the reference mark image MKY is detected, and then the signal S1 of the wafer mark image MK1 . i number S2 is detected at an interval of offset 1.

Further, regarding the mark images MKIX and MKX, one detector D is arranged behind the slit SLx+. The mark images MK×, MK1x are scanned in the direction of the arrow,
First, the signal S3 of the reference mark image MKx is detected, and then the signal S4 of the wafer mark image MKIX is detected.

Then, relative position information between the two is calculated from the above signal.

FIG. 4(a) is information in the Y-axis direction in this example.

From the signals S1 and 52 in FIG. 4(a), the mark images MKY and M
The relative position of KIY is calculated based on a clock pulse (not shown), and the difference between this value and the known slit offset 2 corresponds to the amount of positional deviation. As the signal processing method, averaging and various other known methods can be used.

FIG. 4(b) is information in the X-axis direction in this example.

In FIG. 4(b), the arrangement relationship between mark images MKIX and MKx in the alignment completed state is predetermined at a predetermined interval. The position is calculated from the signals S3 and 84 using the same processing method as described above, and the difference between the calculated value and the predetermined interval described above is equivalent to the positional deviation.

As described above, highly accurate position detection is possible by observing the reference marks and wafer marks placed apart on each of the X and Y axes with a simple configuration of one detector for each axis and one or two slits. Become.

Note that FIG. 5 shows another example of the slit light receiving method. In the same figure, the detector is each slit S Lxa,
1 each behind S LX41 S LY31 S LY4
They are placed one by one. In the same figure (a), a reference mark image MKY and a wafer mark image MK for position detection in the Y direction are shown.
IY is scanned in the direction of the arrow, and by the slits 5LY3 and 5LY4 and the detectors behind each,
Signals S5 and S6 are detected. By these signals S5 and S6, the reference mark MKY and the wafer mark MK1
Relative position information with respect to v is calculated. The same goes for the X direction, and in the same figure (b), the reference mark image MK
X and the wafer mark image MK1x are scanned in the direction of the arrow, and signals S7 and S8 are detected by the slits 5LX3 and 5LX4 and the detectors behind them. Note that the slits 5LX3 and 5LX4 are arranged at a predetermined interval, and the mark image MKX is
At X4, the mark images M K 1 x are detected by the slits 5LX3, and other signals are ignored.

The reference mark MK is generated by the signals S7 and S8.

Relative position information between the wafer mark M K 1 x and the wafer mark M K 1 x is calculated.

Compared to the light receiving method shown in FIG. 4, in FIG. 5, signals are taken in at the same time, and each mark is separately received by a separate detector. This makes it possible to minimize errors caused by uneven polygon rotation, and to appropriately arrange detectors for optical signals of different intensities (optimizing accuracy and cost). - Next, the wafer illumination optical system (WL in FIG. 1) will be explained.

The laser beam may be introduced onto the wafer by directly introducing the laser beam onto the wafer using a mirror or the like, or by routing the laser beam through an optical fiber OFF as shown in FIG. 6(C). However, using an optical system such as a mirror increases the size, restricts the degree of freedom in routing, and increases cost. Furthermore, when optical fibers are used, there is a problem in that the lights from each element are combined and cause interference, causing uneven illumination.

In this embodiment, the laser beam LSR is made to be incident on the wafer WF through a single mode fiber SF as shown in FIG. 6(a). Single mode fiber SF is
Since there is no phase change or interference inside the
The emitted light has an ideal Gaussian distribution, making it possible to provide illumination without uneven illumination.

346 (b) shows the above single mode fiber SF
A gradient index lens SL and an expander lens EL are added to both ends of the lens. The gradient index lens SL is designed to efficiently condense incident light, introduce it into the fiber SF, and output it as parallel light.

Thereafter, the light passes through an expander lens EL and becomes parallel light expanded to a desired size. Gradient index lens SL
By adding the expander EL and the expander EL, an illumination optical system with high intensity and uniform illuminance distribution is realized. 6th
Figures (d) to (f) are conceptual diagrams of the illuminance distribution in the wafer illumination light introduction method shown in Figures (a) to (c), respectively.

In addition, in such a single mode fiber SF, the second
The wafer is illuminated from each direction DRI-DR4 in FIG. 2B, and in this embodiment, the optical path lengths are determined so that the illuminations in the opposing directions become non-interfering light with each other. That is, DRI and DR2 are made to have different optical path lengths for introducing illumination light by changing the length of the fiber SF, etc., so that the light beams do not interfere with each other. The same applies to DR3 and DR4. It is sufficient to make the illuminations in opposing directions become incoherent light, but the effect can be improved by making the optical path lengths different in all four directions so that each of the four illuminations becomes incoherent light. It's large.

Next, the chromatic aberration correction optical system will be explained.

When performing TTL alignment using light of a wavelength different from the exposure wavelength as in this embodiment, it is necessary to satisfactorily correct various chromatic aberrations caused by the projection optical system. At this time, if such a correction optical system is configured as a transmission type like O3 in FIG. 1, there is a drawback that the size becomes large. Therefore, we decided to arrange a plurality of back reflection mirrors so as to be inclined to each other with respect to the optical axis to form an optical system for correcting chromatic aberration.

FIG. 7 is a detailed diagram of the transmission type chromatic aberration correcting optical system O5 of FIG. 1. Here, the chromatic aberration correcting optical system O5 has a configuration in which three plane parallel plates GPI to GP3 are arranged at an angle to each other with respect to the optical axis.

FIG. 8 shows a reflective type chromatic aberration correction optical system.

In the figure, the reflected light from the wafer marks (MK1y, etc.) passes through the projection optical system PO to the mirror Mll in FIG.
incident on . Here, the mirror Mll is a plane-parallel back reflecting mirror and is inclined with respect to the meridional light beam of the projection optical system. After that, the light flux passes through the mirror M12. M
13. Mirror M here! 2. M13 is Ml
Like Ml, it is a back reflection type, but the tilt direction is mirror Ml.
It is orthogonal to l. The light flux that has passed through the mirror M13 is reflected by the surface reflection type mirror M14 and is imaged on the reference mask 8M.

The necessity and operation of such a chromatic aberration correcting optical system will be explained below.

2. Description of the Related Art Observation devices that use an observation optical system to observe and detect the position of a projection surface projected by a projection optical system have been used in various optical instruments.

For example, in an exposure apparatus used in semiconductor manufacturing, a projection optical system projects a reticle surface as a first object onto a wafer surface as a second object, and an observation optical system observes the state on the wafer surface. This observation device is used to perform position matching between the reticle surface and the wafer surface, so-called alignment.

The alignment accuracy at this time largely depends on the optical performance of the observation device. Therefore, the performance of the observation device is an important factor in the exposure device.

Various types of alignment devices using such observation devices have been proposed in the past.

For example, the present applicant has also proposed an alignment system using an observation device in Japanese Unexamined Patent Publication No. 58-25638.

In this publication, G-line (438 nm) light is used in the projection optical system for projection exposure onto the wafer surface, and H-line is used in the alignment system.
Light with a wavelength (442 nm) emitted from an e-Cd laser is used. Since the two wavelengths used at this time are approximately equal, by configuring the projection optical system mainly,
Almost the same optical performance is obtained with light of the same wavelength. By configuring the projection optical system so that it is telecentric on both the reticle side and the wafer side, a so-called double-telecenter optical system is constructed, so that when observing the wafer surface from the reticle side, the principal ray of the observation light is always directed toward the reticle. It takes advantage of the feature that it is perpendicular to the surface. As a result, even if the type of IC to be manufactured changes, the pattern dimensions on the reticle surface change, and the observation position of the alignment system changes, the angle of the light incident on or reflected on the reticle surface remains unchanged.
By utilizing this property, highly accurate TTL on
It constitutes an Axis system.

Note that the TTL on Axis system performs alignment between the reticle and the square via a projection optical system for exposure while remaining in the exposed state.

Generally, when performing alignment using the exposure wavelength or a wavelength equivalent thereto, the TTL on Axis system is a preferable method in terms of accuracy.

However, if the wavelengths for projection exposure and alignment are approximately the same, when a multilayer resist is used as the resist applied on the wafer surface, the multilayer resist absorbs the alignment light and reduces the light reflected from the alignment mark on the wafer surface. This causes a decrease in the S/N ratio and alignment accuracy. Therefore, it is necessary to make the alignment wavelength and the exposure wavelength different to improve the S/N ratio and improve the alignment accuracy.

When alignment is performed using the TTL method with different alignment wavelengths and exposure wavelengths, the projection optical system has various aberrations well corrected only for the exposure wavelength, so light other than the exposure wavelength causes various chromatic aberrations. In this case, axial chromatic aberration, lateral chromatic aberration, comatic aberration of other colors, astigmatism, spherical aberration, etc. occur, making it impossible to observe well and causing a decrease in alignment accuracy.

For this reason, various methods have been proposed to allow good observation of the wafer surface through a projection optical system using light other than the exposure wavelength. Methods that can be adopted include shifting the position of the wafer surface by the amount of shift in the optical axis direction of the projection optical system to establish a conjugate relationship between the reticle surface and the wafer surface, or providing auxiliary optical means between the reticle and the projection lens. It's been a long time.

However, in all of these methods, the correction of the chromatic aberration of the projection optical system was insufficient, so it was possible to form only a radial pattern image without asymmetric aberrations, such as coma aberration, lateral chromatic aberration, etc., that is, only in the sagittal direction. was used.

However, if only sagittal imaging is used, it becomes difficult to achieve high-precision alignment that accompanies high resolution in the submicron era. For example, a change in the imaging state of the projection optical system itself, such as a change in projection magnification due to a change in atmospheric pressure, or a partial distortion of the wafer can be regarded as equivalent to a change in magnification. Such a change that can be regarded as a change in magnification can be detected at all by using a radial pattern.

Furthermore, with only imaging in the sagittal direction, basically only one piece of information can be obtained by observing one point, and there is insufficient information to achieve two-dimensional alignment by observing only two points.

In the past, only sagittal imaging was used due to insufficient correction of chromatic aberration in the projection optical system, but in the future, sagittal imaging will be used to achieve higher resolution in the submicron era. Statues alone are no longer enough.

For this reason, there is a strong demand for an exposure apparatus for semiconductor manufacturing that is capable of highly accurate alignment and that satisfactorily corrects the chromatic aberration of the projection optical system at the observation wavelength.

Therefore, when observing the state of the projection surface using a projection optical system using a wavelength different from that used for projection, various chromatic aberrations caused by the projection optical system are corrected to improve observation. In order to make this possible, in particular, by using an observation optical system that has well corrected various chromatic aberrations caused by the projection optical system when performing TTL alignment at a wavelength different from the exposure wavelength in an exposure device used in semiconductor manufacturing. A chromatic aberration correction optical system is provided to enable precise alignment. In particular, it is compact if constructed using three parallel plane back reflection mirrors arranged as shown in FIG.

Of these, the coma aberration with respect to the observation wavelength of the projection optical system is corrected by the back reflecting mirror Mll, which is tilted with respect to the meridional cross section of the projection optical system, that is, disposed obliquely and asymmetrically with respect to the imaging light beam of the meridional cross section. At this time, the tilt angle is determined depending on the amount of aberration generated by the projection optical system and the thickness of the back reflection mirror Mll. This single back reflection mirror M11 is effective against coma aberration, but on the other hand, it causes astigmatism. The sum of the astigmatism at this time and the astigmatism at the observation wavelength of the projection optical system becomes the astigmatism of the entire system. Therefore, in this embodiment, two back reflection mirrors M12. M13
The astigmatism of the entire system is corrected by arranging them at an angle to each other in a plane orthogonal to the plane on which the mirror Mll is inclined. In other words, two mirrors M1 are rotated in a plane with mirror Mll rotated by 90 degrees around the optical axis of the observation optical system.
2. M13 is installed.

Mirror M12. When the M13s have the same thickness, they may be arranged in a line-symmetrical relationship, and when they have different thicknesses, they may be arranged at different angles. and two mirrors M1
2. The overall combination of M13 is designed to prevent coma aberration from occurring. However, mirror M12. Since the astigmatism of M13 is exerted as a synergistic effect, astigmatism occurs, but by arranging it within a plane twisted by 90 degrees with mirror Mll, adjustment is made so that the occurrence of astigmatism cancels each other out. For example, if the aberration occurring at the observation wavelength of the projection optical system is only coma and no astigmatism, two mirrors M
The thickness of 12°M13 is the abbreviation for mirror Mll, and even if the three mirrors Mll and M12 are made equal to the optical axis of the observation optical system even though they are twisted, coma aberration and non-coma of the projection optical system can be avoided. Observation with point aberration corrected becomes possible.

In addition, if the projection optical system has astigmatism at the observation wavelength, mirror Mll and two mirrors M12. If the angle formed by M 13 is made different depending on the amount of astigmatism, observation with the aberration corrected becomes possible. That is, in the correction optical system shown in FIG. 8, the amount of correction can be arbitrarily controlled by adjusting the inclination of the parallel plane plate.

By properly correcting comatic aberration and astigmatism with the above configuration, aberrations can be corrected not only in the sagittal direction but also in all directions including the meridional direction, and both on the reticle surface and the square surface. This makes it possible to observe the alignment mark as a good image at the same time. This enables highly accurate alignment.

Furthermore, if it is configured as a reflective type as shown in Figure 8, since it is a back-reflection mirror, it will take less time compared to a thicker transmissive type, and the correction optical system also serves as the optical path routing. As a result, it has become compact and low cost.

FIG. 9 shows a part of the previous embodiment constructed with a transmission type optical system.

Note that the objective lens may be made movable, and the chromatic aberration correction optical system may also be made to move following it. This allows the objective to be moved in response to various shot sizes, and chromatic aberrations can be corrected accordingly, allowing for a flow of post-exposure after AA, and throughput can be improved.

This concludes the explanation of the reflective chromatic aberration correcting optical system.

Next, the detector sensitivity correction will be explained.

Conventionally, there has been a problem that as the sensitivity of a light receiver such as a detector changes over time, accuracy deteriorates due to changes in signal strength, or in the worst case, detection becomes impossible. A possible solution to this problem would be to widen the dynamic range of the detection system gain, but this would result in high costs.

Therefore, in this embodiment, a standard light source is made incident on the detector and changes in sensitivity are monitored. This results in
The change in sensitivity can be used as a reference (software) and the gain can be changed, and the change in sensitivity can be dealt with by changing the intensity of the detection light source. The sensitivity monitor may be checked periodically at an appropriate timing, such as every carrier, every reticle exchange, or once a day.

By performing such detector sensitivity correction, there are effects such as (1) optimization of the design of the detection system (cost), (2) improvement in accuracy, (2) avoidance of failure to detect, and (2) improvement in reliability (self-diagnosis of troubles).

FIG. 1O shows the detector D (Dx) in FIG.

DY) is a detailed diagram of the portion. The LED is a light emitting diode that is a light source with approximately the same wavelength as the alignment wavelength. This is not limited to a light emitting diode, and any light source having substantially the same wavelength as the alignment wavelength may be used. Here, the wavelength is 860n
m red LED (manufactured by Stanley: F H1011
) is used. Lll is a condenser lens, and M21 is an optical path bending mirror. Although the optical path bending mirror M21 is arranged outside the effective optical path of the alignment position detection optical system,
It is arranged so that the light emitted from the LED via the condenser lens Lll is incident on the detector D.

FIG. 11 is a schematic block diagram of the detector sensitivity monitoring mechanism. The LED is turned on at an arbitrary time by the arithmetic control system ARM, and the detector D detects the light.

The output of the detector D is sent to the arithmetic and control system ARM, where it is compared with the reference output recorded in the memory MEM1, etc., and if the sensitivity of the detector D has changed, the arithmetic and control system ARM
controls and corrects a detector control circuit (not shown). - For example, controlling the voltage applied to the detector D.

Next, chopping and waveform processing will be explained.

In order to eliminate the influence of interference between the reflected light from the edge of the wafer mark and the reflected light from the resist surface, in this embodiment the beam is incident on the mark from an oblique direction as shown in FIG. In this case, beams must be incident from four directions to obtain reflected light from each edge of the mark.

FIG. 12(a) shows the relationship between the mark and the incident beam in FIG. 1, and FIG. 12(b) shows the reflected light from the edge of beam 1 and beam 3. The reflected light from edge A by beam 1 is shown in FIG. Let A I be the reflected light from edge B, Bl be the reflected light from edge A by beam 3, A3 be the reflected light from edge B, and B be the reflected light from edge B. If beams 1 and 3 are incident on the mark at the same time, as shown in FIG. 12(b), interference occurs between reflected beams A and A3 at edge A, and interference between beams B1 and B3 at edge B. In order to eliminate the influence of this interference, it is sufficient to change the timing of the beam incidence to obtain the reflected light from each edge separately, and this method is called chopping.

Next, a method for obtaining the true position from reflected light that is not affected by interference obtained by chopping will be described.

By chopping, reflected light from each edge as shown in FIG. 13 is obtained. The waveform shown in the figure is the waveform obtained when the image of each edge is scanned with an ideal slit, that is, a slit with an infinitesimal width.

To explain chopping more clearly,
Assume that marks on the wafer and reticle are directly aligned. Figure 14 (a)
), the signal obtained by chopping from each edge will be as shown in FIG. 14(b). Note that the waveform representing the reflected light of beam 1 and the waveform representing the reflected light of beam 3 in FIG. As shown in FIG. 13, the peaks for each edge of each mark do not appear, but this is because the width of the slit is finite in the scan of the mark image actually performed in this embodiment. This is because the light emitted from the edge is the sum of the light from both edges. Therefore, the waveform in FIG. 14(b) is slightly distorted.

Next, the amplitude of the signal obtained from each edge is A+, A3
Then, as shown in FIG. 14(C), the amplitude of each signal is adjusted so that AI=A3, and a composite wave is obtained. A certain slice level K is determined for the amplitude A of the composite wave.

K = A X 30/100 From this slice level K to the slice position PI.

P2 is determined, and the position of each mark is determined by setting the mark position on the wafer as a slice position to determine the amount of deviation from the true position.

Next, a second method for obtaining the true position from reflected light that is not affected by interference and is obtained by chopping will be described.

Assuming that light from each edge is received by an ideal infinitely small slit as described above, reflected light from each edge as shown in FIG. 13 is obtained by chopping. On the other hand, the marks on the wafer and reticle are
), and if the light from each edge is received by a slit of finite width, the signal obtained by chopping from each edge will be as shown in FIG. 15(b).

Then, as shown in FIG. 15(C), the amplitude of the signal obtained from each edge is defined as A I + A 3. Then, for each signal, the slice level is + (K+ = A+
30/10G), K3 (K3 = As
30/100). Slices are applied to each signal using these slice levels. As the slice position, as shown in FIG. 15, the steepest rising and falling sides of each signal are used as the slice positions. That is, for example, focusing on the signal with amplitude A1, it is determined which position of Ql or Q2 is steeper, and the steeper side is used as the slice position.

Slice position Q3 of the signal with amplitude A3. Similarly, the steep side is used for Q4. If Ql and Q are steep, slice position Pl.

If the midpoints Q2 and Q4 of P2 are steep, these midpoints are determined as the mark position. Here, for simplicity, Ql and Q are used bare, and Q2 and Q4 are used bare. In this way, by determining the position of each mark, the amount of deviation from the true position is determined.

Furthermore, a third method of obtaining the true position from reflected light that is not affected by interference and is obtained by chopping will be described.

Assuming that light from each edge is received by an ideal infinitely small slit as described above, reflected light from each edge as shown in FIG. 13 is obtained by chopping. On the other hand, move the mark on the reticle to the square in Figure 16 (a
), and if the light from each edge is received by a finite slit, the signal obtained by chopping from each edge will be as shown in FIG. 16(b).

Next, as shown in FIG. 16(C), a differential signal of the signal obtained from each edge is obtained. For the signal obtained from beam 1, find the maximum peak position P1, and for the signal obtained from beam 3, find the minimum peak position P, P+,
By determining each mark position using the midpoint of Ps, the amount of deviation from the true mark position is determined.

From these methods of obtaining the mark position by chopping, the most suitable method may be selected depending on the waveform of the mark on the wafer to be obtained.

This concludes the explanation of chopping and waveform processing.

Next, correction of the amount of laser light emitted from the wafer illumination system WL will be explained.

This is done to ensure a signal output and S/N ratio greater than -window in order to perform highly accurate positioning. To this end, changes and deterioration of the light source, all optical systems, and detectors are important issues, especially when obtaining alignment signals using multiple light sources, optical systems, and detectors as in this example. Become. Therefore, it is of great significance to detect and correct these changes and deteriorations.

FIG. 17 is a schematic diagram for explaining laser light amount correction. This figure is a schematic diagram of FIG. 1, and the same symbols indicate the same or common parts.

In FIG. 17, KTS is a light amount adjusting element and light source LP2.
If it is non-polarizing, it is an aperture stop or one in which various ND filters are arranged on the circumference. In addition, light source LP2
If is polarizing, a polarizing filter can also be used in addition to the above. KTU is a unit that controls and drives the light amount adjustment element KTS, and in this example, controls and drives the light amount adjustment element KTS in the rotational direction. MEMI and MEM2 are memories. It is desirable that these be non-volatile.

In the figure, laser light amount correction is performed as follows. First, the aforementioned detector sensitivity correction is performed. That is, the arithmetic system ARM turns on the LED, and the detector D detects the light. The output of the detector D is compared with the reference output value stored in the memory MEM 1 by the calculation system ARM, and if the sensitivity of the detector D has changed, the calculation system ARM controls the detector control circuit (not shown) to increase the sensitivity. to correct.

After such detector sensitivity correction, a reference wafer WF is mounted at a predetermined position.

Then, the lens E is connected from the light source LP2 through the fiber SF, etc.
A shutter (not shown) disposed inside the illumination system leading to L serves as an oven, and illumination light illuminates the wafer WF.

As mentioned above, the reflected or diffracted light from the surface of the sea urchin is detected by the detector D via the projection lens Po, and the data is sent to the calculation system ARM. The calculation system ARM compares the measurement data with the reference stored in the memory MEM2, calculates the amount of correction for the illuminance on the light source side, and issues a command to the light amount correction control drive unit KTU. Based on the command, the light amount adjustment element rotates in this example to perform correction. Repeat the correction operation again if necessary.

In the above example, the sensitivity of the detector and the illuminance of the light source are each corrected to constant values as a correction method, but it is also possible to correct one of them relative to the other. The light source is preferably a laser, but other light sources may be used. In addition, other methods may be used as the light amount adjustment element and control drive method.

In conventional methods, this kind of light intensity correction simply detects and corrects changes in illuminance on the light source side, but it is possible to perform more accurate correction than that, and it also reduces the cost of signal processing circuits, etc., and reduces the processing software. It has become possible to simplify and speed up processing time.

Next, various modifications of wafer mark position detection will be described.

First, the position at which the wafer mark is observed is not limited to one location, that is, it is not limited to a single objective. Therefore, if you have two or more eyes, you can measure the wafer in the θ direction and the magnification at the same time in the XY directions.

Furthermore, instead of observing only the wafer mark of one shot, it is also possible to simultaneously observe the wafer mark of the next shot. Therefore, even with one eye, it is possible to measure the θ direction and magnification of the wafer without reducing throughput.

FIG. 18 shows an example in which the wafer marks of the next shot are observed at the same time. In the figure, the B shot wafer mark 101 and the wafer mark 102 of the next shot, the C shot, are alternately arranged and observed simultaneously. In the same figure (b), wafer mark M K 1 ya and wafer mark M
K 1 xa is B shot mark, wafer mark M
K 1 vc and wafer mark M K 1 xc are C shot marks. 19 shows the signals obtained by arranging the marks in this manner and scanning the images of these marks over the slits arranged at predetermined positions. The correspondence between each signal, mark, and slit is as follows.

■Signal S9...Detection signal at slit 5Lys of image of reference mark MKY■Signal Sll...Wafer mark MK 1 yc
Based on the detection signals S9 and Sll at the slit 5LY7, the amount of positional deviation of the C shot in the Y direction can be detected.

■Signal SIO...Detection signal at slit 5LY6 of image of reference mark MKY■Signal S12...Wafer mark MK 1 ya
Slit SLY? Based on the detection signals SIO and S12, the amount of positional deviation of the B shot in the Y direction can be detected.

■Signal S13-・Detection signal at slit SLx of image of 1 reference mark MKx■Signal S15...Wafer mark MK1xa
Based on the detection signals S13 and ≦15 in the slit 5LxII, the amount of positional deviation of the B shot in the X direction can be detected.

■Signal S14...Slit SLX of image of reference mark MKX? Detection signal ■Signal S16...Wafer mark MKIM. Based on the detection signals S14 and S16 at the slit 5Lxa, the amount of positional deviation of the C shot in the X direction can be detected.

As described above, the relative positions of the B shot and C shot with respect to the reference mark can be measured.

Therefore, while measuring the right mark of shot A in FIG. 18, the left mark of shot B is measured at the same time, and by roughly measuring the right mark of shot B and the left mark of shot C at the same time, The θ direction and magnification error of a shot (B shot here) can be measured without reducing throughput.

Next, a modification of the reference mask shown in FIGS. 1 and 3 will be described with reference to FIG. 20. This is an example in which the reference mask and wafer are aligned relative to each other without the reference mask illumination optical system BML.

FIG. 20(a) shows the appearance of a reference mask BM that can eliminate the illumination optical system BML.
is provided with a window W through which the image of the wafer mark can pass through, and the window W is provided with members 5DWI and 5DW2 that can cast a shadow on the wafer mark. As a result, a shadow can be created on the wafer mark as shown in FIG. 1(b), and an image as shown in FIG. 1(C) can be obtained on the slit surface (SLX and 5LY in FIG. 1).

SDW in FIG. 4(c) indicates a portion shaded by members 5DW1 and 5DW2 of the reference mask BM.

The image shown in FIG. 4C is scanned by a polygon in the direction shown in FIG. 2D, and the light transmitted through the slit is detected to obtain a signal S21. This signal S21 has a part where the signal strength drops corresponding to a shadowed part.
By obtaining such a signal, the relative position of the wafer and the reference mask can be measured. In this case, the wafer mark attached to the wafer is the mark MKI for position detection in the X direction.
X is a shape extending in the X direction, mark M for position detection in the Y direction
KIY will be used that extends in the Y direction.

Next, the chopping operation in this embodiment will be explained with reference to FIG. 21.

FIG. 21 is a schematic configuration diagram of this embodiment, which is a simplified version of FIG. 1. Prior to detecting the position on the reticle, the position of the alignment mark on the reticle is first converted into an electrical signal by the M-system photoelectric detection system DM.

On the other hand, the chopping circuit C also applies to marks on the wafer.
The HP performs chopping, and the wafer illumination system WL irradiates laser light, which is converted into an electrical signal by the W-based photoelectric detection system DW via the projection lens PO.

The reflected light signal from the edge of the mark is converted into an electrical signal by the M-system photoelectric detector DM and the W-system photoelectric detector DW.
After the signal section is detected by the signal component detection circuit SL which is synchronized with the chopping circuit CHP, it is converted into a digital quantity by the A/D converter ADC and stored in the wave memory WBM. After the signals from all edges are measured, the digital signal processor DSP
The signal processing to determine the mark position is performed at high speed by the CPU, the amount of deviation is determined by the CPU, and the motor MO is controlled.
Positioning is performed by driving Y stage WS.

FIG. 22 shows a flowchart during alignment of the system of this embodiment. When alignment is started in step 101, chopping is first performed in step 102. Step 1
In step 03, set the signal gain from the edge so that the A/D converter does not overflow, and then proceed to step 1.
04, it is converted into a digital quantity and stored in memory. In step 105, check whether signals of all edges are obtained or not.
If so, chopping is performed further and the previous processing is repeated; if Y'', in step 106, waveform processing is performed on the waveform signal stored in the memory to obtain the mark position, and in step 107, the amount of deviation is calculated. Based on the amount of deviation, the tolerance is determined in step 108, and if it is outside the tolerance, the stage is driven in step 109.On the other hand, if it is within the tolerance, the stage is driven in step 11.
Alignment ends at α.

Next, AA using He-Ne laser and image processing
I will explain about it.

Conventionally, in a reduction projection exposure apparatus, He
- Possible methods include using a Cd laser or image processing. In this case, due to limitations of the projection lens, it is necessary to use a wavelength close to the exposure wavelength in order to observe/measure the reticle/sea urchin. As a result, the resist near the alignment mark is burnt, and the reflected light of the illumination light and the diffracted or reflected light used for measurement interfere with each other, resulting in signal distortion or interference fringes and alignment errors.

In this example, as described above, since the illumination light for position detection is applied to the square from between the projection lens and the wafer, there is particularly little interference due to the influence of the resist. As shown in the figure, it is a linear mark.

FIG. 23 shows an example of performing AA in image processing. Second
Figure 4 shows a block circuit diagram of the image processing unit. The image illuminated by the wafer illumination system WL is converted into an electrical signal by an ITV camera, solid-state image sensor (C0D in this example), etc.
The image is digitized by the /D converter ADC and stored as image digital data in the frame memory FME. Focusing on this image digital data in the direction of each linear mark, data is obtained by projecting and integrating only the required length in the X or Y direction using the projection integration window TSW shown in FIG. By determining the center of gravity of the projection data TDA thus obtained, the amount of relative deviation between the mark on the reference mask and the wafer mark is calculated. In this embodiment, since there are no interference fringes in the obtained image, sufficient accuracy can be obtained because the center of gravity of the integrated data is determined. Therefore, as shown in FIG. 24, the amount of deviation can be measured at high speed and with high accuracy without requiring any special hardware except for the part where the XY projection integration is performed. In addition, if even higher-precision displacement measurement is required, After calculating the difference before and after and removing noise components from this difference signal, calculate the moment at each of the above points of the difference signal, and determine the mark position by finding the point where the moment crosses zero among the above points. or ■ Setting multiple windows of a predetermined size, integrating image signals in one direction of two-dimensional coordinates within the windows, and calculating the center of each mark window based on the integrated signal for each window. The method of calculating the value and determining the position of the mark based on the center value of each window, etc. may also be applied.

Note that even when performing such image processing, when beam 1 and beam 3 in Fig. 12 are emitted at the same time, the linear mark becomes the composite sum of A1 and A3 and the composite sum of Bl and 83. , the intensity of beam 1 and beam 3 and AI
+ A3 + Bl + 83 Due to the respective diffraction efficiencies, A, +A3 versus B, +B may not be balanced.

In order to solve this problem, a configuration as shown in FIG. 26 can be used. This figure shows the circuit diagram of FIG. 24 with two frame memories and four wafer illumination system WL light projection control blocks TC.
This is the one with O added.

With this configuration, first, the projection of beam 1 in FIG. 12 is turned on and the beam 3 is turned off, and image data is taken into the frame memory FMEI, and then the projection of beam 1 is turned off and the beam 3 is turned on. Load the image data into another frame memory FME2. Then, the center of gravity is separately determined for each frame memory using the method explained in FIGS. 23 to 25 above, and the amount of deviation is determined. Furthermore, the above-mentioned problem can be solved by calculating the average of data when beam 1 is turned on and when beam 3 is turned on. Also, change the data when beam 1 is turned on and the data when beam 3 is turned on so that the peaks are the same, and calculate the data when beam 1 is turned on and the data when beam 3 is turned on. The same effect can be obtained by applying the above method to the data obtained by adding the data when the switch is turned on.

Next, reticle positioning will be explained.

There are two main types of means for aligning the pattern on the reticle and the pattern on the wafer. One method is to directly capture the reticle and wafer pattern simultaneously and perform relative alignment (hereinafter referred to as the direct method).
In this case, it is sufficient that the relative positions of the pattern on the reticle and the pattern on the wafer match regardless of the position of the reticle as long as the accuracy is within the guaranteed range. Therefore, there is no need for highly accurate alignment of the reticle.

The second method of alignment means is to first align the reticle accurately with the alignment reference on the device, and then align the wafer pattern with the alignment reference on the device whose positional relationship is guaranteed in advance. In this method, the reticle and wafer pattern are aligned by aligning them (hereinafter referred to as indirect method).

In this case, the alignment error of the reticle with respect to the reference on the apparatus is directly added as an alignment error between the reticle and the wafer. That is, the reticle must be aligned with high precision with respect to the reference.

Conventionally, reticle alignment (hereinafter referred to as RA) for setting a reticle on a main body has been performed using a laser scanning method. The laser scanning method scans a laser beam at a constant speed to create an auto alignment mark (hereinafter referred to as A).
In this method, the reflected and diffracted light from the edge portion of the AA mark (referred to as the A mark) is received by the Fourier transform surface of the AA mark, and relative positional deviation is detected and corrected with high precision from there.

When performing the direct method, after such RA, the reticle and the square are viewed through one optical system and the two objects are directly aligned.

On the other hand, when performing alignment in which alignment standards on the main body intervene during this time, in other words, when implementing an indirect method using a laser scanning method for RA, the following problems are factors that hinder realization. (See Figure 27).

■Generation of noise due to speckles of the laser (coherent light) ■Since the signal is the reflected and diffracted light of the reticle pattern, the signal output will drop if the pattern is drawn on a material with low reflection. This makes it difficult to detect the signal.

■Currently, alignment is performed while maintaining a certain amount of gap between the mark on the reticle side and the AA mark on the main body. As this gap changes, the optical path length of the signal light changes and interference occurs (waveform distortion occurs), so the signal output changes.

Among these methods, since laser light is particularly used, the influence of interference cannot be avoided, making it difficult to achieve even more precise reticle alignment.

RA that takes the above points into consideration will be described below with reference to the drawings.

FIG. 28 is an example of a reticle alignment detection system to which the indirect method is applied. This detection system is guaranteed to have a relative positional relationship with the reference mark BM shown in FIG. An illumination system LP3 illuminates an alignment mark (not shown) for reticle alignment via a half mirror HM. Objective lens L31 is imaging lens L32
cooperate to form an image of the alignment mark on the detector Dl. The detector D1 is an image detector such as a CCD or an image pickup tube, and serves as a positional reference for reticle alignment. Since the relative positional relationship between the reference mark BM and the CCD is guaranteed in advance, the reticle LT is aligned with the CCD, and the wafer WF is aligned with the reference mark BM. However, even with this configuration, there are problems such as poor contrast.

Next, with reference to FIG.
Method A will be explained.

In the figure, a mercury lamp 1 is used as a light source. G-line is selected from the light generated from the mercury lamp 1 and guided to the main body via the optical fiber 3. The fiber 3 is installed so that the light enters an optical system that illuminates the main body side reticle alignment mark (hereinafter referred to as the main body side RA mark) from below. This light transmits and illuminates the RA mark on the main body side and the RA mark on the reticle side, which is present with a certain gap therebetween, and images each RA mark on the CCD or image pickup tube 9. The detected images are sent to the computer 13 and subjected to image processing to detect the relative displacement of each RA mark. The data is transferred to a reticle stage drive system (not shown) to correct the deviation and align the reticle and the main body.

FIG. 30 is a sectional view showing how the mark portion is illuminated through transmission, and FIG. 31 is an example of an alignment mark.

This method has several advantages in that it can achieve high accuracy in reticle alignment.

■Even if the gap between the RA mark on the main body side and the RA mark on the reticle side changes, no interference will occur because the illumination light is incoherent light. Therefore, stable signal output can be obtained.

■Since it is transmitted illumination, images with good mark contrast can be obtained. Furthermore, if the material used to draw the pattern on the reticle does not transmit light, it will not affect the contrast, so there will be almost no change in signal output when changing the reticle.

Since the positional shift is detected by zero image processing, the shape of the RA mark can have flexibility such as increasing the amount of information compared to conventional marks.

As described above, higher accuracy than that obtained with conventional reticle alignment can be obtained. Therefore, it is possible to align the reticle with higher precision than in the past, which means that it is possible to align the reticle and the square with higher precision than before.

Next, RA using the above-mentioned transmission type illumination will be explained in more detail.

FIG. 32 shows the hardware configuration of the position detection device according to the RA method shown in FIG. 29.

In the figure, 20 is an analog-to-digital converter (hereinafter referred to as an A/D converter), which converts a video signal (video signal) that is an analog signal sent from a video signal control unit (not shown) into 256 gradations. into a digital signal. 21 is a two-dimensional grayscale image memory (hereinafter referred to as
An input image for position detection captured by an imaging device (referred to as a gradation memory) is stored in this gradation memory 21 after A/D conversion.

First, the coarse detection section will be explained. Block H in the figure is a histogram processor.

In block H, 22 is a converter that adds data from the density memory 21, and 23 is a density histogram memory (hereinafter referred to as histogram memory) that stores the addition output.
, 24 is a memory division control circuit that controls the address of the histogram memory 23 in order to divide the density memory 21 into a plurality of partial areas and extract a density histogram for each partial area. ? ! 210% of the 4-tan meko memory is, for example, the 33rd
As shown in the figure, the X direction is divided into 16 areas and the Y direction is divided into 16 areas. Below, such division is divided into r division number 16X
It is expressed as 18J. In the histogram processor H, the memory division control circuit 24 divides the density memory 21 according to the division number mxn from the microprocessor 25, and a density histogram is extracted for each partial area. and stored in the histogram memory 23.

In the binarization threshold calculation unit (microprocessor 25), each of the density histogram data for each of the plurality of partial regions extracted by the histogram processor H is processed using a discriminant analysis method (bisection method using the maximum variance of a bimodal histogram) or Calculate the binarization threshold using the P-tile method, etc. (The discriminant analysis method or the P-tile method is detailed in Coronasha's "Image Recognition Theory" by Makoto Nagao, "4-1 Binarization and Thresholding"). ing).

Block B is a binarization processor. In block B, 26 is a binarization comparator for binarizing the data from the grayscale memory 21, and 27 is a binarization slice level register that stores the slice level (binarization threshold) of the digitization comparator 26. The binarization threshold for each partial area calculated by the binarization threshold calculation unit is stored in this binarization slice level register 27. 28 divides the I-light memory 21 and divides each divided area. This is a memory division control circuit that controls the binarization slice level register 27 in order to perform binarization for each block.
are shared. The data binarized by the binarization processor B is stored in a two-dimensional binarization memory (hereinafter referred to as binary memory) 29.

By using the binarization threshold calculation unit of the histogram processor H1 microprocessor 25 and the binarization processor B described above to perform binarization processing for each partial area,
Adaptive binarization that is not affected by the size of marks or the brightness of lighting becomes possible.

Block S is a reduced smoothing processor. In the block S, 30 is a reduction smoother that extracts an area of nxn pixels (for example, 4 x 4 pixels) from the binary image data stored in the binary memory 29 and compresses it into one pixel, and 31 is a reduction smoother 30. This is a reduction slice level register that stores a reduction threshold value (described later) for .

The reduction smoothing function in the reduction smoothing processor S will be explained. FIG. 34 is a diagram showing a case where 4×4 pixels are compressed into one pixel. Such reduction will be expressed as between reduction rates. In the case of between reduction ratios, among 4×4=16 pixels in the input crab value image data from the binary memory 29,
Count the number W of pixels whose data is 1, compare this W with the reduction threshold t, and if w > t, compress the target 166 pixel data 1 to 1 pixel. If W≦t, the target 166 pixel data Compress to 1 pixel of O. With this operation, for example, 512
The binary image data of 512 x 512 pixels is reduced to the binary image data of 128 x 128 pixels. By appropriately selecting the reduction threshold t, noise can be removed and the shape of the object can be adjusted. Such reduction smoothing processing is effective as a preprocessing for template matching processing in the following respects. That is, when performing template matching processing on a binary image after reduction and smoothing, (1) a small template with a small number of pixels can be used;
Since the range of template matching processing is small,
It does not require a large memory capacity, the hardware scale can be reduced, and processing time can also be shortened.

(2) Since noise in the target image data is removed and the shape of the target object is adjusted, the detection rate and accuracy of template matching processing are increased.

There is an advantage.

The reduction ratio and reduction threshold t can be specified by the microprocessor 25 depending on the size of the object and the situation of the input image. The binary image data after reduction and smoothing is stored in 32 reduced two-dimensional binary image memories (hereinafter referred to as reduction memories).

Block T is a template matching processor. In the block T, 33 is a 32×32 pixel correlator, and 34 is a template register that stores a reference template group. The template data specified by the microprocessor 25 and the data in the reduced memory 32 are compared and verified in the correlator 33, and when the degree of correlation output from the correlator 33 is the largest, that degree of correlation and the address on the reduced memory 32 are compared. is stored in the 35 maximum correlation registers. By multiplying this address by the reciprocal of the reduction ratio (4 times for a reduction ratio diagram), the position coordinates of the object in the input image can be determined with an error of ±4 pixels. This position is defined as the rough detection position.

Grayscale memory 21, binary memory 29 and reduction memory 32
Image memory block M and blocks H1B, S,
Each processor T is connected to the microprocessor 25 by an image address bus 36 and an image data bus 37, and blocks M, H, B, S, and T are connected to the microprocessor 25 by a data bus 38. The image memory and the registers of each processor can be read and written by the microprocessor 25.

39 is a read address counter that generates an address when displaying image memory data on a monitor TV or reading image memory data while each processor is operating (image processing operation); 40 is an A/D A at converter 20
This is a write address counter that generates an address when writing /D-converted digital image data to the gray scale memory 21 or when writing image data to the image memory during image processing operation.

41 is a digital-to-analog converter that converts the digital image data stored in the image memory block M into an analog video signal for display on a monitor TV; 42 is a reference clock generation circuit; and 43 is a reference for the reference clock generation circuit 42. This is a TV synchronization signal generation circuit that generates a TV horizontal synchronization signal, vertical synchronization signal, blanking signal, etc. based on a clock.

The above is the configuration of the rough detection section and the hardware according to an embodiment of the present invention.

Next, the precision detection section will be explained.

In the re-binarization threshold calculation unit (microprocessor 25),
From the partial areas divided in the rough detection process, partial areas near the coarse detection position are extracted based on the rough detection position, and these areas are divided by interpolation from the binarization threshold of those areas calculated during the rough detection process. The microprocessor 25 approximately calculates the binarization threshold value of the sub-divided partial area when the area is further divided. The size of the range to be extracted from the vicinity of the rough detection position at this time is determined by the size of the target object (mark, etc.).

FIG. 35 shows how the re-binarization threshold is calculated by such an interpolation method. The figure shows a case where a 4×4 area is extracted as the vicinity of the rough detection position, and the 4×4 area E surrounded by the solid line is one of the partial areas divided by the rough detection process. . Furthermore, an area e surrounded by a broken line and a solid line, which is obtained by further dividing the area E into four, is one of the finely divided partial areas in the precise detection process. In the same figure, t+
, tz, ts, and ta are binarization thresholds for each area in the rough detection process. These are used as the binarization thresholds at the center of each region, and from these, the binarization thresholds a, b, c, and d of each region in precise detection processing are approximately calculated by interpolation. For example a
is an approximate calculation of 0 or more expressed by the following formula,
Binarization thresholds are calculated for all the divided partial regions in the precise detection process, and each divided part is binarized even more finely than in the coarse detection process, thereby improving the position measurement accuracy in the precise detection process. The binarization process is performed by a binarization processor in the same way as the rough detection.

FIG. 36 shows that one of the position pressure detection marks used in this example is li! Close inspection ratio detection process 0 indicating the binarized state For example, the mark part is expressed as 1 and the other parts as 0 0 In the centroid calculation section, the microprocessor 25 calculates the centroid of each component of the object. Calculate. In this embodiment, for example, the center of gravity of a line segment element of a mark as shown in the same figure is calculated. First, based on the rough detection position, areas a, b, and c that include the line components of the mark can be set. Find the center of gravity of the line component within each region (ax, ay).

(bx, by) and (cx, cy), and the y-coordinate Y of the mark center is given by the following equation.

Y, --(ay+2by+cy) The X coordinate of the center of the mark is determined by setting the area in the X direction, as in the case of the X coordinate.

The above is the processing of the center of gravity calculation section. The precision detection processing unit, which performs re-binarization near the rough detection position and center of gravity calculation processing, improves the position detection accuracy to ±local pixels, supplementing the detection accuracy by the coarse detection processing unit.

FIG. 37 shows a flowchart of processing operations in one embodiment of the present invention described above.

In addition, by using the center of gravity of the data projected and integrated in the mark direction as shown in FIG. 25 using the XY projection integration unit shown in FIG. If the center of gravity is calculated for the data in the grayscale memory, re-binarization processing is not necessary, and the center of gravity is also calculated in three-dimensional directions including the brightness direction (density), which improves position measurement accuracy. will improve.

Next, correction of geometric distortion in the image input system will be explained.

In the image input system used for RA as described above, factors such as lens distortion in the optical system, graphical distortion of the imaging device such as a CCD camera, and sampling error during A/D conversion of the video signal cause errors in the input image. Geometric distortions occur.

Therefore, in order to obtain accurate measurement results, it is necessary to correct these distortions.

First, a method for correcting geometric distortion of the imaging system will be explained.

FIG. 38 shows an absolute grating drawn on a reticle using EB, and its drawing accuracy is sufficiently high.

Correction is performed by determining a transformation (-order transformation formula) between the grid image obtained by imaging this grid and the actual grid.

The transformation from an actual lattice (hereinafter referred to as a real lattice) to a lattice image is approximated by local linear transformation. The intersection of the grids or the center point of the area surrounded by the grids is measured on the grid image by calculating the center of gravity, and the position is determined as (x', y')
shall be. Let the corresponding position on the real lattice be (x, y) as follows.

If we express it as X' = AX+E becomes. Therefore X'-/M' (X'-E) It is.

FIG. 39 shows a real lattice and a lattice image captured from the real lattice.

By measuring X r', X 2', and X s' and solving the simultaneous equations, El and the temporary transformation A1 are found. Hereafter, the area surrounded by points X,', X2', and X3'(Xl'
, X2', X,') is A,
, E, X' = AI''"(X' - E)...
・Correct as ■ 0th order, measure X4', x, ', x2'
.

X4' to A2. Find E3.

From now on, in the image area, X, ′, ..., x
By measuring n', A I * E I corresponding to each local area can be found as shown in FIG. This is called an imaging system distortion correction map (hereinafter referred to as a correction MAP).

By correcting the measurement position in the image using the correction map using the formula (2), highly accurate position measurement is possible. The correction map need only be created once as a characteristic of the imaging system, but if it changes over time, it must be created again periodically in accordance with the period.

In addition, if even higher precision is required, approximation is performed using a higher-order transformation, and conversely, if so much precision is not required,
The measurement points of X1', . . . , x, l' may be thinned out. FIG. 41 shows the flow of correction map creation.

By the way, the XI' value measured as described above is not necessarily a correct value due to defects in the absolute grid drawn on the reticle by EB, scratches on the reticle, dust on the reticle, etc. Therefore, after measuring Xl', an abnormal value check for XI' is first performed. The abnormal value check will be described later. If the number of abnormal values m exceeds the preset upper limit M of the number of abnormal values, change the field of view and remeasure X+' in a part with fewer abnormal values. Change the field of view and measure The method to redo the correction map and obtain an accurate correction map is as described below.
The value of is determined, for example, to be 10% of the total number of measurements of X1'.

If X,' is determined to be abnormal, the value of
Interpolate from the direction X1'. FIG. 42 shows the method of interpolating the abnormal values.

If X,' are abnormal and the immediate surroundings X1' to Xa' are proper, then d = I X4'-XJ l -I XJ -X
s' I+ l X2'-XJ I-I XJ-
X7'1+ l X3'-XJ I -l XJ -
Xs' 1+ l XI'-XJ l -I XJ
-Xj' is determined so that I...■ is minimized. Furthermore, not all the surroundings of Xj' are correct. In such a case, calculate d using the closest proper XI' in each direction and its positional relationship. For example, Xs' is also abnormal and one lattice is removed from there. If the distant X,' is appropriate, then part ■ should be taken as the part in d calculation, that is, d is d = klXa'-Xj'1-kzlXj'-Xb'
1+kslXc'-X'''l-41Xj'-Xd'l
+kslXa'-Xj'1-kalXj'-Xr'1+
k yl X w' -X J' I- to ♂IXJ'
-X+'l becomes X,',Xb'---XI'
is the closest appropriate value in the 8 directions of XJ'(7), k, , 2.
..., ka is a coefficient representing their positional relationship on the real grid.

After abnormal value interpolation, A1. Calculate El and create a correction map.

Next, abnormal value checking will be explained.

AJ r E obtained from measured values including abnormal values x and ′
If correction is performed based on J, there is a risk that the measurement accuracy will deteriorate, so the abnormal value check is to find such an abnormal value Xj'. This check is done globally, not locally.

Real lattice points X,,X2.・・・・・・X, is dl, and the linear transformation of the whole, not local, is given, and the lattice point after transformation is dl
'. The overall linear transformation is given by:

θ: Tilt β: Magnification x, y are each direction S: Shift amount Here, the measured value of the grid point on the grid image XI' +
......Let Xn' be λm, ■ = 1Σ1Htl' (however, Ht-d r'-421) σ = I
An abnormal value is determined at nn-1 0. In other words, the lattice dI′ that is closest to the measured value ρ1 among the transformation lattices that have uniformly linearly transformed the entire
is determined by the method of least squares, and it is determined whether II is an abnormal value based on the variation of ld1'-1I1 at that time.

If there is one abnormal value, that is, if one IL1 is abnormal, it can be determined as follows.

In other words, as shown in FIG. 43 (both the amount of deviation and the grid intersection position are expressed in one dimension for convenience of explanation), when only one grid intersection among the measured values of n grid intersections has a deviation that is significantly different from the others. , the method for finding this is r/σ>K (r and σ are the values shown in FIG. 43, and K is a constant value).

In this case, it is better to use σn-1 excluding the abnormal value candidates in Figure 43(b), rather than σ obtained from the data including the abnormal value candidates in Figure 43(a), for a. can be prevented from worsening due to abnormal values, and abnormal values can be clearly identified. This is caused by abnormal measurement values Xs', X2', and
...Xn' is the distribution N (m, σ
This judgment was made based on the assumption that the value does not comply with n-1). Therefore,
The abnormal value is determined using the following formula.

Abnormal value determination method> When r/a > K, the i-th measurement is considered abnormal. However, K = constant value (currently 3.0) β8. β, θ8. θ,, SX, Sy, obtained by excluding the vcttth grid intersection d,,P, is the position of the i-th grid intersection...■ This judgment method ■ is σ, which is the random error of the process. Since the size of is predicted and abnormal values are determined based on that value, abnormal value determination can be expected without depending on the process.

In order to find one abnormal lattice intersection among n lattice intersections, it is necessary to perform the determination of the 0 equation n times, but (i=
1-n), which requires a large amount of calculation and is not practical. Therefore, among the n lattice intersections, one lattice intersection that is more likely to be an abnormality is found, and if that lattice intersection is determined to be abnormal using the formula 0, that lattice intersection is removed as an abnormal value.

The lattice intersection that is a candidate for an abnormal value is the lattice intersection that is farthest from the lattice when all n lattice intersections are corrected.

On the other hand, if there are a plurality of abnormal values, that is, if there are two or more abnormal value grid intersections, rl/σ cannot be determined because i in equation 0 is not one.

Furthermore, even if it is determined by some method that a certain set of m lattice intersections among the n lattice intersections is an abnormal value, the combinations will be as many as IClll, and the amount of calculation will be too large.

Furthermore, it is difficult to determine what the value of m is. Therefore, if there are many abnormal grid intersections, the above abnormal value is 1
Extract one lattice intersection using the method when
From the lattice intersections, the next lattice intersection point is extracted in the same way, and m lattice intersection points are extracted in this manner.

At this time, if there are abnormal values at two lattice intersections as shown in FIG. 45, even if the first lattice intersection is removed, the remaining lattice intersections still have large 0s, so r/σ does not increase.

If one more lattice intersection is removed, there will be no abnormal value, so σ will become smaller and 1/a will become larger.

Such a change in the value of r/σ takes the form shown in Figure 46. If there is an abnormal value at the intersection of two lattice points as shown in Figure 45, the two lattice intersections are removed as shown in Figure 46 (C). r when
/σ comes to show a peak. Therefore, record the value of r/a while removing one lattice intersection, and if the maximum value of r/σ exceeds K, discard the lattice intersections up to that point as abnormal values, and if the maximum value does not exceed K, This means that there is no abnormality.

In fact, when abnormality candidates are removed one after another, σ tends to a smaller value, and when there are three remaining lattice intersections, σ=0 and r/σ=■. Furthermore, since it is meaningless to remove too many grid intersections compared to the original number of grid intersections, an upper limit M is set for the number of grid intersections that can be removed.

The algorithm that ultimately finds the outlier is that the outlier is 1.
Regardless of whether it is a lattice intersection or multiple lattice intersections, the flowchart shown in FIG. 47 is obtained.

Next, a method for obtaining an accurate correction map by changing the field of view and performing measurements will be explained.

FIG. 48(a) shows an area (■) where data that is not an abnormal value is continuous based on the measured correction map and the abnormal value check.
■ and ■ are shown. Each point in the figure indicates each grid intersection of the absolute grid on the imaged reticle.

In this state, the reticle is moved relative to the imaging means. In this embodiment, the objective optical system is driven in the X and Y directions by a motor (not shown) to move the target image with respect to the field of view, and the image is processed in the same manner as the wording means to obtain a correction map. In Figure (b), after obtaining the correction map shown in Figure (a), by shifting the field of view by two grids to the right and re-measuring, normal correction map information for ■~■ and ■'~■' can be obtained. It shows that you are getting it. By repeating this process until there are no abnormal values in the correction data or the range does not exceed the upper limit M, an accurate correction map that is not affected by mark defects, scratches, dust, etc. can be obtained.

Next, monitoring of the reticle position will be explained.

In the AA method of this embodiment, the reticle and the square are not observed at the same position, so it is assumed that the relative positions of the respective detection systems do not deviate. Furthermore, it is meaningless if the reticle shifts during the wafer alignment operation after alignment, so it is of great importance to constantly detect (monitor) the reticle position in order to achieve high alignment accuracy. There is.

In FIG. 49, LTS is a stage that can move the reticle LT in the XYθ directions, WS is a stage that can move the wafer WF in the XYθ directions, Ml, BM, and D are the aforementioned wafer position detection systems, and OBI and OB2 are the 29th stage. This is a detection system for aligning the reticle shown in the figure. Note that these detection systems are shown schematically and various members shown in FIGS. 1 and 29 are omitted. Also, MO and MOL are each
The drive system that drives and positions the Yθ stages WS and LTS, and the ARM, is an arithmetic control system that calculates each position error based on signals from the wafer position detection system and the reticle position detection system and controls the operation of each drive system. . Although the wafer stage WS includes the interferometric length measuring meter IFM shown in FIG. 1, it is omitted here. Position information of the interferometric length meter IFM is also input to the arithmetic control system.

In conventional position detection devices, the reticle is assumed to be fixed after alignment, but it may move for some reason. According to this embodiment, the reticle position is simultaneously detected by the detection systems OBI and OB during the wafer alignment operation.
2, and the arithmetic control system ART provides feedback to the drive system MOL so as to always maintain a predetermined position.

That is, the reticle position is monitored and the reticle is driven when it deviates from a predetermined position. This ensures the reticle position at all times.

Note that instead of driving the reticle, the amount of positional deviation of the reticle may be reflected on the wafer side. That is, as described above, the reticle position may be constantly monitored, and if it deviates from a predetermined position, the arithmetic control system may feed back the wafer alignment command value.

Furthermore, it is also possible to drive both the reticle and the sea urchin so that the relative positional relationship becomes a predetermined position.

Furthermore, it is of course possible to perform monitoring and correction at any timing as necessary.

[Effects of the Invention] As explained above, according to the present invention, the light for illuminating the second object is introduced onto the second object through a single mode fiber, so that the illumination is non-uniform and has no uneven illuminance. can be observed on the second object. In addition, this allows highly accurate positioning.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of an alignment device to which an illumination device according to an embodiment of the present invention is applied; FIG. 2 is a diagram showing the positions of marks on a wafer and the illumination direction of wafer illumination light; FIG. is a diagram showing the arrangement of the illumination system of the reference mask and the arrangement of the reference mark and wafer mark image; FIGS. 4 and 5 are conceptual diagrams for explaining the slit light reception method; and FIG. 7 to 9 are block diagrams of the chromatic aberration correction optical system. Figures 10 and 11 are block diagrams and schematic block diagrams of the detector sensitivity monitoring mechanism. Figures 16 to 16 are conceptual diagrams for explaining chopping and waveform processing, Figure 17 is a schematic diagram for explaining laser light intensity correction, and Figure 18 is an example of simultaneously observing wafer marks for the next shot. FIG. 19 is a diagram showing the slit light reception method in the case of FIG. 18. FIG. 20 is a diagram showing a reference mask using a shadow mark as a reference mark. The schematic configuration diagram of the device, FIG. 22, is
A flowchart of the positioning operation of the system of this embodiment. FIGS. 23 and 24 are a configuration diagram and a block circuit diagram when performing AA in image processing. FIG. 25 shows a projection integration window and data. Figure 26 is a diagram showing another example of performing AA through image processing, Figure 27 is a schematic diagram showing conventional reticle alignment, and Figure 28 is a reticle alignment detection system applying the indirect method. FIG. 29 is a diagram showing the reticle alignment detection system of this embodiment. FIG. 30 is a cross-sectional view showing how the mark portion is illuminated through transmission. FIG. 31 is an example of an alignment mark. Figure 32 showing
33 is a diagram showing an example of a plurality of partial regions in binarization, FIG. 34 is a diagram illustrating reduction and smoothing processing, and FIG. 35 is a diagram showing the hardware configuration of the alignment device.
Figure 36 is a diagram explaining the interpolation method of the binarization threshold, Figure 36 is a diagram explaining the center of gravity calculation, Figure 37 is a processing flow diagram, and Figure 38 is a diagram showing the absolute grid drawn on the reticle. Figures 39 and 40 are a diagram showing a real grid and a grid image taken from it, and a diagram showing a corrected map, and Figure 41 is
A flowchart for creating a corrected map, FIG. 42 is a schematic diagram showing a method of abnormal value interpolation, FIGS. 43 to 47 are graphs and flowcharts for explaining an abnormal value determination method, and FIG. FIG. 49 is a schematic diagram showing the field of view when changing and re-measuring to create a corrected map. FIG. 49 is a configuration diagram of a mechanism for monitoring the reticle. LP: illumination system, LT reticle, Po: projection optical system, W
L: wafer illumination system, WS: wafer stage, OS: chromatic aberration correction optical system, BM: reference mask, DP: roof prism, PM: polygon mirror, DX, DY: detector. Patent Applicant Canon Co., Ltd. Agent Patent Attorney Tetsuya Ito Agent Patent Attorney Tatsuo Ito Figure 6 Figure 2 (b) ) Figure 12 Reflection of edge force by beam 3 and beam 1 Figure 13 (a) (b) (c) Figure 14 (Q) (b) Figure 15 (CI) (c) ” Figure 16 Fig. 17 Fig. 22 Fig. 23 Fig. 24 Fig. 25 Fig. 27 Fig. 30 Fig. 31 Fig. 33 Is$w (0≦w≦16)
)Figure 34Figure 35Figure 36Figure 37Figure 39 i! & 40 Figure 41 Figure 1 Senbun 1 to get back on your feet. (a) All Oδ children, book cr, /lI Toki “Medai no 1\
uPl 噌- Tatsumi Tsuneyi Naodai 43 Takashi each) communication, expense, if: # (7+-ts\ra r's large and small 1 size T de] regular law map ← 1's -C 1g-to child 5 Abnormal A picture ≠ Ri regular law Figure 44 Multiple children, resentment/) Abnormal 4 position Figure 45 (a) (b) (c)
(d) Tajiko's abnormal directness! Fig. 46 Arrangement abnormal case) Heat exchange failure pattern Fig. 47 (a) (b) Fig. 48

Claims (1)

[Scope of Claims] 1. An illumination device for a second object in an apparatus for projecting a pattern drawn on a first object onto a second object via a projection optical system, In order to illuminate the second object from between the system and the second object without going through the projection optical system, an illumination optical system is provided that introduces illumination light onto the second object through a single mode fiber. A lighting device characterized by: 2. The illumination device according to claim 1, further comprising a gradient index lens and an expander lens at both ends of the single mode fiber. 3. The illumination device according to claim 1 or 2, wherein the second object is observed and position detected through the projection optical system using illumination light from the illumination optical system. 4. The illumination device according to claim 1, 2, or 3, wherein the optical path lengths of the plurality of illumination lights illuminating the second object are respectively changed.