JPS63266070A - Sputtering device of planar magnetron system - Google Patents

Abstract

PURPOSE:To enlarge the effective treating width of a material to be treated and to prolong the service life of a target by arranging an electrode for forming a tunneled magnetic field distribution on the region of the planar target at a specified position. CONSTITUTION:The sputtering device is provided with a roll anode 6 arranged in a vacuum vessel 9 and the electrodes 14, 17, and 18 for forming the tunneled magnetic field distribution 5 on the region of the planar target 1. The planar target 1 is set so as to cover the rectangular annular electrodes placed in the recess on the end face side of a cathode 7 opposed to the band material 11 to be treated wound on the anode 6. In addition, a plurality of the electrodes 14, 17, and 18 are provided, and arranged in a line or staggered in the traveling direction of the material 11.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement of a planar magnetron type sputtering apparatus.

[Conventional technology]

Conventionally, as a pre-nagnetron type sputtering apparatus for sputtering a continuous material such as a strip-shaped film, sheet, fiber, or glass, a device incorporating a permanent magnet or a single electromagnetic coil has been used.

This will be explained below with reference to FIGS. 11 and 12.

FIG. 11 is a sectional view of an electrode provided with tunnel-like magnetic field generating means, and FIG. 12 is a sectional view taken along the line B--B in FIG. 11. In the figure, 1 is a target flat plate which is the target material, 2
is a yoke, 3 is a rectangular annular magnetic pole, 4 is a rectangular magnet, and 5 is a tunnel-shaped magnetic field distribution.

6 is a roll anode around which the object to be processed (not shown) is wound; 7
8 is a cathode, 8 is an eroded region, 9 is a vacuum chamber, and 22 is a discharge prevention cover for preventing discharge other than a portion of the target flat plate 1. A rectangular annular magnet 3 magnetically coupled to the cathode 7 by a yoke 2 on the back surface of the target flat plate 11 and a rectangular magnet 4 in the center of the rectangular annular magnet 3 are arranged to form a magnetic circuit. There is. The roll anode 6 is rotatably supported, and the winding portion around which the strip-shaped object to be processed is wound is opposed to the cross-sectional side of the cathode 7, and the end surface side of the cathode 7 is a rectangular annular electrode disposed in a recess. A target flat plate 1 is disposed to cover the rectangular electrode 3 and the rectangular electrode 4, and the target flat plate 1 is opposed to the roll anode 6.

The rectangular annular magnetic pole 3 and the rectangular magnet 4 create a distribution of magnetic lines of force in the spatial region on the surface side of the target flat plate 1 (anode roll 6 side), that is, a half plane perpendicular to the height direction of the rectangular annular magnet 3. The semi-mounted surface of the target flat plate 1 generates a magnetic field distribution 1 (commonly known as a tunnel-shaped magnetic field distribution 5) parallel to the surface of the target flat plate 1.

This tunnel-like magnetic field distribution 5 confines plasma-like ions inside the vacuum chamber 9 at a high concentration.

These plasma-like ions are further accelerated by an electric field almost perpendicular to the surface of the target flat plate 1 generated by a high voltage applied between the roll magnetic pole 6 and the cathode 7 installed on the back surface of the target flat plate 1. The atoms or particles collide with the surface of the target flat plate 1, and as a result, the atoms or particles are sequentially ejected from the surface of the target flat plate 1, and an eroded region 8 is formed.

FIG. 13 is a schematic sectional view of a device incorporating the electrode of FIG. 11, and FIG. 14 is a side sectional view of FIG. 13. In the figure, 10 is a pipe connecting the vacuum chamber 9 to a vacuum pump (not shown), 11 is a film to be processed, and 12
is a feeding reel of means for continuously feeding the film 11;
13 is a take-up reel for winding up the same, and 23 is an electrode.

Next, the sputtering process will be explained. The inside of the vacuum chamber 9 is evacuated to about 1X10-IS to 1X10-B using a vacuum pump, and after evacuation, Ar gas is introduced from a gas introduction system (not shown) and set at around 5 to 10XIIO-'' Torr8. Next, a predetermined amount of current is passed through the electrode coil of the target structure as described later, and the magnetic field strength is 200 to 30.
The magnitude and direction of the current are adjusted to obtain 0 Gauss and a predetermined spatial magnetic flux distribution.

Next, the feed reel 12, the roll anode 6, and the take-up reel 13
is driven to move the film 11 to be processed at a rate of approximately 1 m/l 1 inch.
Run it with Then, when a DC voltage of 400 to 700 V is applied between the cathode 7 and the roll positive 41!6, the Ar gas causes a glow discharge, the Ar particles or particles are ionized, and a confined plasma region is generated. The plasma-like ions are accelerated and ejected, forming a thin film of the target material deposited on the surface of the moving film 11 wound around the roll anode 6. In connection with this type of technology, Japanese Patent Publication No. 59-22788 has been proposed.

In the conventional structure described in this publication and the above-mentioned Figures 11 to 14, the structure using a circular electromagnetic coil has a convex shape in the center of the width of the film when the film, etc. is subjected to continuous sputtering treatment. There was a problem that the film thickness distribution was as follows, and the effective processing width of the film was narrow. Furthermore, in order to obtain the desired effective film processing width, in the case of the examples shown in FIGS. 11 to 14 above, a planar magnetron electrode having a width approximately 1.5 times the effective processing width is required, and When a large effective processing width is required, there is a problem in that the planar magnetron electrode becomes large, leading to an increase in the size of the entire sputtering apparatus.

[Problem that the invention seeks to solve]

In the above conventional technology, no consideration is given to making the thickness distribution of the deposited thin film uniform in the width direction of the object to be processed and expanding the effective processing width, and the film is thicker and more effective at the center of the width direction. If the processing width is narrow and an attempt is made to widen the effective processing width, there is a problem in that the planar magnetron electrode becomes larger and the entire sputtering apparatus becomes larger.

The present invention has been made in view of the above situation, and an object of the present invention is to provide a planar magnetron type sputtering apparatus that can expand the effective processing width of a workpiece and downsize the apparatus.

[Means for solving problems]

The above purpose is achieved by installing a roll anode which is disposed in a vacuum chamber and rotatably supported, and a concave portion on the cathode end surface facing the winding portion of a band-shaped workpiece wound around the roll anode. A target flat plate is disposed on the end face portion so as to cover the provided rectangular annular electrode, and an electrode is provided to form a tunnel-like magnetic field distribution in a region above the target flat plate surface,
This is achieved by a planar magnetron type sputtering device in which a plurality of the electrodes are arranged and arranged in a row or in a staggered manner parallel to or perpendicular to the feeding direction of the object to be processed. .

[Effect]

As described in the description of the embodiment below, the third
A first electromagnetic coil 15 having a rectangular annular body electrode as shown in the figure;
Electrodes 14.17 each having a second electromagnetic coil 16
．． 18 are arranged in a line perpendicularly to the direction in which the film 11 is fed, as shown in FIG. 1, or in a staggered position as shown in FIG. Alternatively, by arranging them in parallel as shown in Fig. 8 and adjusting the current of the electromagnetic coil, film thickness distributions as shown in Figs. 5, 6, and 9 can be obtained, and the film thickness can be adjusted. It is possible to make the treatment uniform and increase the effective treatment width in the width direction of the object to be treated, or to average out the erosion in the erosion region 8, thereby extending the life of the target 1.

〔Example〕

Hereinafter, the planar magnetron type sputtering apparatus of the present invention will be described as an embodiment, the same parts as the conventional ones will be given the same reference numerals, the explanation of the structure of the same parts will be omitted, and FIGS.
An example will be explained. Figure 1 is a schematic sectional view of the device, Figure 2
The figure is a side sectional view of Fig. 1, Fig. 3 is a sectional view of the electrode provided with the tunnel-like magnetic field generating means of Fig. 1, and Fig. 4 is A of Fig. 3.
In FIG. 6, which is a sectional view taken along the -A arrow, 15 and 16 are a first electromagnetic coil and a second electromagnetic coil each having a rectangular annular body magnetic pole. Electrode magnet coil 16 is arranged around first electromagnet coil 15 . 14, 17, 18 are electrodes shown in FIG. 3, 19 is a cooling water passage for cooling the target flat plate 1, 20 is a cooling water pipe for cooling the first electromagnet coil 15, and 21 is a second electromagnet coil 16.
A cooling pipe 24 is the seat of the vacuum chamber 9,
The cathode 7 is attached to the seat 24 via an insulating bushing 25. Moreover, la, lb, and lc are target flat plates.

In the above structure, first. Second electromagnetic coil 15.16
By appropriately controlling the current applied to each of the
A film thickness distribution as shown in Figures (A) to (C) can be obtained. Figure 5 (a) has a width of 400 m and a length of 250 m.
When using an electrode with a height of 200 I and setting the distance between the target flat plate 1 and the roll anode 6 to 50111 m, 4 A is applied to the first electromagnetic coil 15 and 4 A is applied to the second electromagnetic coil 16. This is the case. In (b), the first electromagnetic coil 15 is 4A, and the second [magnet coil 16 is 2A].
When A is applied, (C) is the same as the first electromagnet coil 15.
This is the film thickness distribution when -IA (in the direction of canceling the magnetic field of the first electromagnetic coil 15) is applied to the second W1 magnet coil 16. By changing the current value in this manner, various film thickness distributions can be obtained.

Now, prepare three sets of such electrodes, arrange the electrodes 14, 17, and 18 in a straight line in a direction perpendicular to the transport direction of the film to be processed 11 as shown in FIG. 1, and adjust the current of each electrode. If all the distributions are as shown in Figure 5 (A), then the composite film thickness distribution will be as shown in Figure 6, where the horizontal and vertical axes are the distance in the film width direction and the film thickness, as in Figure 5. can get. In the conventional method, each effective processing width has a convex part at the center of the width and a desired film thickness or less at the ends, and the obtained effective processing width is about 2/3 of the electrode @ (400 m). 2701
It was 111. Therefore, when an electrode with a width of 1200 mm is used, the effective processing range is approximately 800 m. However, in this embodiment, according to the composite distribution shown in FIG.
The total width of 17.18 is the same (1200 mn, but
As shown in the figure, the effective processing width is over 1000 mm as shown in the figure, and it can be seen that the effective processing width is extended by 9/10 of the total electrode width.

Furthermore, by controlling the current values of the electrodes 14, 17, and 18, it is possible to synthesize various film thickness distributions shown in FIGS. Effective processing width can be increased. Therefore, as the film processing time progresses.

By controlling the current values of the electrodes 14, 17.18 and synthesizing as shown in FIG. 6, or by controlling the current and repeating the film thickness as shown in FIGS. Since the eroded region 8 is not concentrated in one part but spreads out, the life of the target flat plates 18 to 1c can be extended.

In this way, the planar magnetron type sputtering apparatus of this embodiment is configured such that the plurality of electrodes forming the tunnel-like magnetic field generating means are arranged in a line in a direction perpendicular to the conveying direction of the workpiece, and the current of the electrodes can be adjusted. However, by composing the film thickness distribution for each tunnel magnetic field generating means, the effective processing width of the object to be processed can be extended from about 2/3 of the conventional method to about 9/10 of the total electrode width. Therefore, the total volume of the electrode can be reduced, the entire sputtering device can be downsized, and the film thickness can be made uniform.
Furthermore, the service life of the target plate can be extended by eliminating localized erosion areas of the target plate.

7 to 9 show another second embodiment.

Figure 7 is an explanatory diagram of the relationship between the roll anode and the electrode, Figure 8 is a left side view of Figure 7, Figures 9 (a) and (b) are the horizontal axis, and the vertical axis is the distance in the film width direction, and the film thickness. FIG. 6 is a film thickness distribution diagram taken in the same manner as FIG. 5; In FIG. 9(a), the distance between the target flat plate 1 and the roll anode 6 is 50 m in the case of FIG. 5, whereas the distance between the roll anode 6 and the target flat plate 1a or 1b is 40o+a. This is the film thickness obtained when the other conditions were the same as those in FIG. 5(b). Figure 9 (b) shows the roll anode 6 and the electrode 14 or 1.
This can be achieved by reducing the power applied to 7 or by shortening the application time. Also.

As shown in FIG. 8, the electrodes 14.17 are arranged at intervals on a straight line parallel to the film transport direction.

The film thickness distribution obtained by combining the film thicknesses shown in FIGS. This has the same effect as the above embodiment.

In addition, according to this embodiment, since the film is superimposed in the film feeding direction, the sputtering time to obtain the desired film thickness can be shortened compared to the conventional case where only one electrode is used, thereby increasing the processing speed. It has a quick effect. moreover,
By repeating Figure 9 (a) and (b) alternately,
The eroded area 8 is further expanded than in the above embodiment, and the life of the target flat plate can be further extended.

FIG. 10 shows still another third embodiment, in which (a) is a side view of the roll anode and the electrode arrangement, and (b) is a developed view of the electrode arrangement of (a). In this example, electrodes 14, 17, 18
The electrodes 14 and 17 are arranged in a staggered manner without being lined up in a line orthogonal to the traveling direction of the film 11, that is, the electrodes 14 and 17 are arranged in the eighth direction.
Arranged as shown in the figure, electrode 18 is located between electrodes 14 and 17,
It is arranged so that it is in a lateral position. This embodiment also has the same effects as the first embodiment.

Incidentally, in each of the above embodiments, the tunnel-like magnetic field generating means have all been explained using electromagnetic coils, but among these,
At least one of the electrodes can be replaced with a permanent magnet, and in this case, the effective processing width of the object to be treated can be extended, the device can be made smaller, and other electrodes can be manufactured at low cost.

〔Effect of the invention〕

As described above, the planar magnetron type sputtering apparatus of the present invention has the advantage of being able to expand the effective processing width of the object to be processed and also making the apparatus more compact.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of an embodiment of the planar magnetron type sputtering apparatus of the present invention, FIG. 2 is a side cross-sectional view of FIG. 1, and FIG. Figure 4 is a sectional view taken along the line A-A in Figure 3, and Figure 5 (A). (b), (c), and FIG. 6 are respectively film thickness distribution diagrams using the electrodes in FIG. 3, and FIGS. 7 to 9 and 10 are respectively other implementations of the planar magnetron type sputtering apparatus of the present invention. Give an example. Figure 7 is an explanatory diagram of the relationship between the roll anode and the electrodes, Figure 8 is a side view of Figure 7, Figures 9 (a) and (b) are film thickness distribution diagrams of the electrodes in Figure 7, and Figure 10 Figure (a) is an explanatory diagram of the relationship between the roll anode and the electrodes, (b) is a developed view of the electrode arrangement in (a), Figure 11 is a cross-sectional view of the electrodes of a conventional planar magnetron sputtering device, and Figure 12 is the B in Figure 11
13 is a schematic sectional view of a device incorporating the electrode of FIG. 11, and FIG. 14 is a side sectional view of FIG. 13. 1, la, lb, lc... target flat plate, 5...
Tunnel-like magnetic field distribution, 6...roll anode, 7...cathode.

Claims (1)

[Scope of Claims] 1. Roll anodes each disposed in a vacuum chamber and rotatably supported, and a cathode end face side facing a band-shaped workpiece wound portion wound around the roll anodes. A target flat plate is disposed on the end face portion so as to cover a rectangular annular electrode disposed in the recess, and an electrode is provided to form a tunnel-like magnetic field distribution in a region above the surface of the target flat plate, wherein the electrode is , a planar magnetron type sputtering apparatus characterized in that a plurality of sputtering apparatuses are disposed, and each of them is disposed in a line or in a staggered position parallel to or perpendicular to the feeding direction of the object to be processed. 2. At least one of the rectangular annular electrodes of the electrode is formed from an electromagnetic coil and is formed to be able to adjust the current, so that the tunnel-like magnetic field distribution is variable. The planar magnetron type sputtering apparatus described above.