JPS63260123A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPS63260123A JPS63260123A JP9442687A JP9442687A JPS63260123A JP S63260123 A JPS63260123 A JP S63260123A JP 9442687 A JP9442687 A JP 9442687A JP 9442687 A JP9442687 A JP 9442687A JP S63260123 A JPS63260123 A JP S63260123A
- Authority
- JP
- Japan
- Prior art keywords
- filter
- pipe
- hcl
- substrate
- directly before
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 8
- 150000002367 halogens Chemical class 0.000 claims abstract description 8
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 6
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 abstract description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910021529 ammonia Inorganic materials 0.000 abstract description 3
- 235000019270 ammonium chloride Nutrition 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 4
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000000927 vapour-phase epitaxy Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- 235000019738 Limestone Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 238000002627 tracheal intubation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野Ｊ
本発明は、気相成長装置に関し、特に、ＨＣＩ等のハロ
ゲンを含むガスを使用する気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J] The present invention relates to a vapor phase growth apparatus, and particularly to a vapor phase growth apparatus that uses a gas containing halogen such as HCI.
従来、Ｉ族元素を塩化水素によシ輸送する気相成長装置
は、第２図のようになっている。Conventionally, a vapor phase growth apparatus for transporting Group I elements using hydrogen chloride is shown in FIG.
例えば、ＩｎＰ＝ｉ成長する場合は、石英製バイパス管
９ｔ−通して、ＰＨａ −？ヤリアガスＨ，で送）％ま
た、石英製炉芯管ｌＯの中に中ヤリアガスＨ３とＨＣｌ
１に送って、Ｉｎ８と反応させ、基板ホルダー１４に設
置され九基板６にＩｎＰ？：成長させる。カランターフ
０−４は、炉芯管１０の内壁の反応生成物の付着を防止
し、カワンターフロー５は、内挿管３のよどみを防止す
る。フィルタｌは後段の配管２の目づｔｂｔ−抑制する
几めに配置している。ま九、この装置に流す塩化水素を
中和する目的で、カワンターフロ−４，５より、ＮＨａ
を導入し、フィルタ１でＮＨ４Ｃｌ 等のかたちで、反
応ガスをおとし、排ガス処理系７への配管２が、ＭＣＩ
により腐食されることを防ぎ、排ガス処理系７の負担を
軽減し、まｔ１フィルタ１にドラッグされる反応生成物
を粉体化して、目づまｂｔ−防いでいた。For example, when growing InP=i, PHa -? In addition, in the quartz furnace core tube lO, Yaria gas H3 and HCl were fed.
InP? : Grow. Kawanturf 0-4 prevents reaction products from adhering to the inner wall of furnace core tube 10, and Kawanturf 5 prevents stagnation of inner tube 3. The filter 1 is arranged in a manner that suppresses the tbt of the piping 2 in the latter stage. Nine, for the purpose of neutralizing the hydrogen chloride flowing into this equipment, NHa is
is introduced, the reaction gas is removed in the form of NH4Cl etc. through filter 1, and piping 2 to exhaust gas treatment system 7 is connected to MCI.
This reduces the burden on the exhaust gas treatment system 7, and also pulverizes the reaction products dragged into the t1 filter 1, thereby preventing clogging.
上述した従来の気相成長装置は、Ｎ１（ａｔ−カウンタ
ーフロ−４，５から導入してい九ので、基板６までＮＨ
，が到達し、結晶成長の際、転位を多数発生する異常成
長を誘発しやすい。ｆｎＰの場合、エッチビット密度が
時として、ＩＱ ｉｌ／ｃｍ”か、それ以上となる。Ｎ
Ｈａの流量金しぼっても、キャリアガスＨ！の流量の変
動により、ＭＨＩが基板に到達し７１するし、まｆｉ、
ＨＣＪｔ−十分中和することができない。このように、
気相エピタキシャル成長を不安定にする欠点がある。In the conventional vapor phase growth apparatus described above, N1 (at-counter flow) is introduced from 4 and 5, so NH is introduced up to the substrate 6.
, which tends to induce abnormal growth that generates many dislocations during crystal growth. For fnP, the etch bit density is sometimes IQ il/cm" or higher.N
Even if the flow rate of Ha is reduced, the carrier gas H! Due to fluctuations in the flow rate, MHI reaches the substrate 71 and MHI,
HCJt - cannot be sufficiently neutralized. in this way,
It has the disadvantage of making vapor phase epitaxial growth unstable.
〔問題点を解決するための手段〕゛
本発明の気相成長装置Ｉ／ｌは、被気相成長基板を設置
する反応管とハロゲンを有するガスを反応ガス設けられ
粉末状の反応生成物を除去するためのフィルターとを有
する気相成長装置において排気路中のフィルターの直前
にハロゲンを有するガスを中和するｔめのガスを導入す
る手段を有している。[Means for Solving the Problems] The vapor phase growth apparatus I/l of the present invention comprises a reaction tube in which a substrate to be vapor phase grown is installed, a reaction gas containing a halogen, and a powdery reaction product. In a vapor phase growth apparatus having a filter for removing the halogen, the vapor phase growth apparatus has means for introducing a tth gas for neutralizing the halogen-containing gas into the exhaust path immediately before the filter.
次に１本発明について図面を参照して説明する。 Next, one embodiment of the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.
ＩＰ を成長する場合は、石英製バイパス管９（ｉ−ｉ
ｌて、ＰＨ５ｅキヤリアガスＨ２で送夛、また。When growing IP, quartz bypass tube 9 (i-i
Then, PH5e carrier gas H2 was used again.
石英製炉心管１０の中にキャリアガスＨ３とＨＣ１ｔ″
送って、ヒーター１により９００℃に昇温１．／ｃＩｎ
８と反応させ、６７０℃に刃口熱し九基板６にｌｎＰを
成長させる。このＩｎＰの成長は、
Ｉｎ＋）ｉＣ４！→ＩｎＣｌ！＋ −Ｈ，・・−・−−
−−・（＋）ＰＨ３→−Ｐ４＋ ｆ（、・・・・・・
・・・ （１１）の化学反応に依っている。Carrier gas H3 and HC1t″ are placed in the quartz furnace tube 10.
The temperature was raised to 900°C using heater 1. /cIn
8 and heated to 670° C. to grow lnP on the substrate 6. This InP growth is In+)iC4! →InCl! + −H,・・−・−−
−−・(+)PH3→−P4+ f(,...
... It depends on the chemical reaction in (11).
カウンターフロー４は、炉芯管１０の内壁の灰石生物の
付着を防止し、カランターフ０−５は、内挿管３のよど
みを防止する。フィルターは後段の配管２０目づまシを
抑制するｔめに配置している。上の（１）式の未反応Ｈ
ＣＩと、０１Ｄ式で発生するＨＣ６ｔ−中和するだけの
ＮＨ３ｆ ＩｎＰ成長時に導入する必要があるが、この
ＮＨｓは、アンモニアボンベ１２から、マスフローコン
トローラ１３で流量調節して、フィルタｌの直前に導入
する。フィルタ１の直前で混合され九ＨＣＩとＮＨｓは
、ＮＨ４Ｃｌとなって、フォルタｌに粉体状に付着する
。The counterflow 4 prevents the adhesion of limestone organisms to the inner wall of the furnace core tube 10, and the calanturf 0-5 prevents the inner tube 3 from stagnation. The filter is placed at the 20th point to prevent clogging of the downstream piping. Unreacted H in the above formula (1)
CI and NH3f, which is only for neutralizing HC6t generated in the 01D formula.It is necessary to introduce this NHs during InP growth, but this NHs is introduced from an ammonia cylinder 12, with the flow rate adjusted by a mass flow controller 13, just before the filter l. do. The HCI and NHs mixed immediately before the filter 1 become NH4Cl and adhere to the filter 1 in powder form.
以上説明し友ように本発明は、排気路中のフィルタの直
前でＮＨ，を導入することによシ、被成長基板ＮＨ６が
到達しなくなるため、基板上の成長層に転位等の結晶欠
陥を発生させることはなくフィルタの目づｔシの防止お
よび排ガス処理系への配管の腐食の防止、ｔた、排ガス
処理系め負担の軽減を行うことができる。エピタキシャ
ル成長したＩｎＰの結晶のエッチビット密度は、この装
置によシ、安定的に、５ｏｏｏ個／ｃｍ２以下に維持す
る効果がある。As explained above, in the present invention, by introducing NH, just before the filter in the exhaust path, the growth target substrate NH6 does not reach, thereby preventing crystal defects such as dislocations in the growth layer on the substrate. It is possible to prevent filter condensation and corrosion of piping to the exhaust gas treatment system, and to reduce the burden on the exhaust gas treatment system. This apparatus has the effect of stably maintaining the etch bit density of epitaxially grown InP crystals at 500 bits/cm2 or less.
本実施例では、 ＩｆｉＰの結晶成長について述べたが
、他のＩ−■族化合物にも同様の効果がちる。In this example, the crystal growth of IfiP was described, but similar effects can be found in other I-III group compounds.
第１図は本発明の一実施例の気相成長装置の縦断面図、
第２図は従来の気相成長装置の断面図である。
ｌ・・・・・・フィルタ、２・・・・・・排ガス処理系
７への排管、３・・・・・・内挿管、４，５・・・・・
・カランターフ０−．６・・・・・・基板、７・・・・
・・排ガス処理系、８・・・・・・工。、９・・・・・
・バイパス管、１０・・・・・・炉芯管、１１・・・・
・・ヒータ、１２・・・・・・アンモニアボンベ、１３
・・・・・・マスフローコントローラ、１４・山・・基
板ホルダー。FIG. 1 is a longitudinal sectional view of a vapor phase growth apparatus according to an embodiment of the present invention;
FIG. 2 is a sectional view of a conventional vapor phase growth apparatus. l... Filter, 2... Exhaust pipe to exhaust gas treatment system 7, 3... Internal intubation tube, 4, 5...
・Caranturf 0-. 6... Board, 7...
・・Exhaust gas treatment system, 8・・・・・engineering. , 9...
・Bypass pipe, 10...Furnace core tube, 11...
... Heater, 12 ... Ammonia cylinder, 13
・・・・・・Mass flow controller, 14・mountain・・substrate holder.
Claims (1)
るガスを前記反応管に導入するハロゲン系ガス導入手段
と、前記反応管の後方に設けられ粉末状の反応生成物を
除去するためのフィルターとを有する気相成長装置にお
いて、前記フィルターの直前に前記ハロゲンを有するガ
スを中和するためのガスを導入する手段を設けたことを
特徴とする気相成長装置。a reaction tube on which a substrate to be subjected to vapor phase growth is mounted; a halogen-based gas introducing means for introducing a gas containing halogen into the reaction tube; and a means for removing powdered reaction products provided at the rear of the reaction tube. 1. A vapor phase growth apparatus comprising a filter, further comprising means for introducing a gas for neutralizing the halogen-containing gas immediately before the filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9442687A JPS63260123A (en) | 1987-04-17 | 1987-04-17 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9442687A JPS63260123A (en) | 1987-04-17 | 1987-04-17 | Vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63260123A true JPS63260123A (en) | 1988-10-27 |
Family
ID=14109904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9442687A Pending JPS63260123A (en) | 1987-04-17 | 1987-04-17 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63260123A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7121286B2 (en) | 2003-03-07 | 2006-10-17 | Kabushiki Kaisha Toshiba | Method for cleaning a manufacturing apparatus and a manufacturing apparatus |
| JP2020105604A (en) * | 2018-12-28 | 2020-07-09 | 株式会社トクヤマ | Vapor phase growth device and production method of iii group nitride single crystal |
-
1987
- 1987-04-17 JP JP9442687A patent/JPS63260123A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7121286B2 (en) | 2003-03-07 | 2006-10-17 | Kabushiki Kaisha Toshiba | Method for cleaning a manufacturing apparatus and a manufacturing apparatus |
| JP2020105604A (en) * | 2018-12-28 | 2020-07-09 | 株式会社トクヤマ | Vapor phase growth device and production method of iii group nitride single crystal |
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