JPS63254650A - Ion implantation equipment - Google Patents

Abstract

PURPOSE:To prevent the breakage, deterioration, etc., of a resist film without requiring a baking device separately by providing a means heating an object to be processed on a holder. CONSTITUTION:Multiple objects to be processed, e.g., semiconductor wafers 3, are held on a holder 2 provided at the center of an ion implantation processing chamber 1 and are heated by an electric heater 5 at this position. The interior of the processing chamber 1 is kept at the degree of vacuum necessary for the ion implantation process, e.g., about 10<-8> Torr. The wafers 3 in the processing chamber 1 are heated to the temperature properly selected based on the heat resistance or the like of the resist film until this target degree of vacuum, e.g., 10<-1> Torr-10<-8> Torr, is attained. The resists of wafers 3 are baked without being broken by the ion implantation in the high vacuum and without requiring a separate baking device.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an ion implantation apparatus for implanting desired ions into a semiconductor wafer or the like.

(Prior Art) Generally, an ion implantation apparatus implants desired ions, such as B'', P'', As'', etc., into a workpiece such as a semiconductor wafer.

Such ion implantation equipment uses an ion source, mass spectrometry magnet, accelerator tube, quadrupole lens, scanning electrode, etc. to form a desired ion beam, and irradiates this ion beam onto a semiconductor wafer, etc. held in a holder. Then, ions are implanted.

Therefore, the injection processing chamber in which the above-mentioned injection processing is performed is made to have a high vacuum of, for example, about 10' Torr. For this reason, for example, in a high current type ion implanter, the ion implanter is formed into a disk shape.
Many of them are equipped with a wafer holder disk that holds multiple semiconductor wafers. In other words, multiple semiconductor wafers are placed on the wafer holder disk, and the ion beam is irradiated while the wafer holder disk is rotated. By processing semiconductor wafers, the device is configured to reduce evacuation time due to loading and unloading, thereby improving throughput.

(Problems to be Solved by the Invention) However, when using the conventional ion implantation apparatus described above to implant ions into a semiconductor wafer whose portion other than the desired ion implantation site is covered with a resist film, etc., the following problems occur. A problem arises.

That is, when a resist film is irradiated with an ion beam, the temperature of the resist film increases due to the kinetic energy of the ions. For this reason, gases trapped in the resist, such as oxygen, air, nitrogen, etc., expand and explode, destroying the resist film, and the resist film and the gases cause chemical reactions and change in quality. A problem arises in that it becomes difficult to remove the resist film.

Furthermore, in order to avoid such problems, conventionally, as a pre-process of the ion implantation process, baking was sometimes performed to remove the gas trapped in the resist film by heating under vacuum. However, this method requires a separate baking device.

The present invention has been made in response to such conventional circumstances, and prevents destruction of the resist film due to gas trapped within the resist film and deterioration of the resist film, etc., without requiring a baking device. The present invention aims to provide an ion implantation device that can perform the following steps.

[Structure of the Invention] (Means for Solving the Problems) That is, the present invention provides an ion implantation apparatus that implants ions by irradiating a desired ion beam onto a workpiece held in a holder, in which the holder includes: The present invention is characterized in that means for heating the object to be processed is provided.

(Function) In the ion implantation apparatus of the present invention, means for heating the object to be processed is arranged in a holder such as a wafer holder disk.

Therefore, for example, during evacuation after loading the semiconductor wafer into the implantation processing chamber, the semiconductor wafer can be heated in the implantation processing chamber that is evacuated to some extent, and the resist film can be baked.

(Embodiment) An embodiment of the ion implantation apparatus of the present invention will be described below with reference to FIGS. 1 and 2.

As shown in FIG. 2, a disk-shaped wafer holder disk 2 is disposed at an end of the injection processing chamber 1, which has an internal shape of, for example, a cylinder. This wafer holder disk 2 is configured to be able to hold a plurality of semiconductor wafers 3 on a circumference concentric with the center of the wafer holder disk 2, and is connected to a drive device 4 so as to be rotatable around the center. has been done.

Further, a heating mechanism such as a heater 5 is disposed on the second wafer holder disk, and this heater 5
It is connected to the power supply device 6.

The power supply device 6 is configured to be able to arbitrarily change the power supplied to the heater 5, and heats the semiconductor wafer 3 held on the wafer holder disk 2 to, for example, 100°C.
It is configured to be able to be heated to about 200°C.

In the ion implantation apparatus of this embodiment having the above-mentioned configuration, when ions are implanted into the semiconductor wafer 3 whose portion other than the desired ion implantation site is covered with a resist film or the like, the following process is performed.

That is, first, the semiconductor wafer 3 is placed on the wafer holder disk 2, and the wafer holder disk 2 is placed in the injection processing chamber 1.

Thereafter, the inside of the injection processing chamber 1 is evacuated to a pressure of, for example, about 10' Torr. Until the desired degree of vacuum is reached, for example, the inside of the injection processing chamber 1 is 1O-ITo.
While the temperature reaches rr to 10-' Torr, power is supplied from the power supply device 6 to the heater 5, and the semiconductor wafer 3 is heated to, for example, ioo'c to 200° C., and the resist film is baked. Note that the heating temperature during baking needs to be appropriately selected depending on the heat resistance of the resist film and the like.

Thereafter, the power supply from the power supply device 6 to the heater 5 is stopped, and while the wafer holder disk 2 is rotated by the drive device 4, the semiconductor wafer 3 is heated with, for example, B", P".
, As, or the like is irradiated with a desired ion beam 7 to perform ion implantation.

As is well known, the ion beam 7 is formed by an ion source, a mass spectrometer magnet, an acceleration tube, a quadrupole lens, a scanning electrode, etc. (not shown).

That is, in the ion implantation apparatus of this embodiment described above, since the heating means consisting of the heater 5 is disposed on the wafer holder disk 2, the semiconductor wafer 3 is 3 can be heated in the implantation processing chamber 1 which is kept in a certain degree of vacuum to bake the resist film. Therefore, the resist film can be destroyed by the gas trapped within the resist film without requiring a separate baking device.
Also, deterioration of the resist film, etc. can be prevented.

In addition, in the above-mentioned embodiment, the heating means consisting of the heater 5 was arranged on the wafer holder disk 2, but the present invention is not limited to such an embodiment, and the means for heating the semiconductor wafer 3 may be Of course, it may be configured.

[Effects of the Invention] As described above, the ion implantation device of the present invention prevents damage to the resist film due to gas trapped within the resist film and deterioration of the resist film, etc., without requiring a baking device. It can be prevented.

[Brief explanation of drawings]

FIG. 1 is a side view showing the main part of an ion implantation apparatus according to an embodiment of the present invention, and FIG. 2 is a front view showing a wafer holder disk. 1... Injection processing chamber, 2... Wafer holder disk, 3... Semiconductor wafer, 4...
・・Drive device, 5・・・Switcher, 6・・・・
Power supply device, 7...Ion beam.

Claims (2)

[Claims] (1) An ion implantation apparatus that implants ions by irradiating a desired ion beam onto a workpiece held in a holder, characterized in that the holder is provided with means for heating the workpiece. Device. (2) The holder is a wafer holder disk that holds a plurality of wafers and is rotatable.
The ion implantation device described in Section 1.