JPS63250134A - Vapor-phase reaction apparatus - Google Patents

Abstract

PURPOSE:To prevent a dust particle from adhering to a wafer which is standing-by for a transfer at the outside of a reaction furnace when a door of a gate part is opened and the dust particle is blown off from the gate part by installing more than one dust particle suction means in the neighborhood of the gate part which can be opened and closed in order to carry the wafer into the reaction furnace or to take it one from there. CONSTITUTION:In a vapor-phase reaction apparatus which is equipped with a gate part 11 which can be opened and closed in order to carry a wafer 6 into a reaction furnace 1 or to take it out from there, at least more than one dust particle suction means 20 are installed in the neighborhood of the gate part 11. For example, the dust particle suction means 20 are installed in positions which do not disturb an opening and closing operations of a door 10 in the neighborhood of the door 10 which can be opened and closed and which is installed at the gate part 11 projected at the reaction furnace 1 of a normal pressure-type planet gear system CVD thin-film formation apparatus. As the suction means 20, for example, a pipe-shaped means is used and its pipe is connected to an appropriate discharge system. It is desirable that the dust particle suction means 20 is arranged in a position which is higher than a wafer transfer means 7; while this arrangement is more effective than a method to arrange a plurality of means at the upper part of the gate part with equal intervals.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Product] The present invention relates to a gas phase reactor. More specifically, the present invention relates to a gas phase reactor that prevents foreign matter blown out of the reactor from adhering to wafers waiting to be carried in outside the gate when the gate ff of the reactor is opened.

[Prior Art] One of the methods widely used in the It conductor industry as a method for forming thin films is chemical vapor deposition (CV).
D:Chemical VaporDesi
t 1on). CVD refers to turning a gaseous substance into a solid substance through a chemical reaction and depositing it on a substrate.

Characteristics of CVD are that various thin films can be obtained at deposition temperatures considerably lower than the melting point of the thin film to be grown;
The purity of the grown thin film is high (Si or thermal oxide film on Si).
It is widely used as a passivation film on the surface of semiconductors because its electrical properties are stable even when grown to -.

Thin film formation by CVD is performed at a temperature of approximately 400°C to 500°C, for example.
A reactive gas (for example, SiH<+
+02. Or S i H4+PH,? +02). The above reaction gas is in a reactor (Beljar)
5i02 on the surface of the wafer.
Alternatively, a thin film of phosphosilicate glass (PSG) or borosilicate glass (BSG) is formed. Further, two-layer film formation of 5i02 and PSG or BSG may be performed. Furthermore, it can also be used to form metal thin films such as molybdenum, tungsten or tungsten silicide.

An example of an apparatus conventionally used for performing such a thin film forming operation by CVD is shown in a partial cross-sectional view in FIG.

In FIG. 3, the reactor 1 includes a buffer 2 covered with a belljar 3, a disk-shaped wafer sample stand 4 installed around the buffer 2 so as to be rotatable or rotatable, and the wafer sample stand A wafer transport means 7 is provided for sequentially supplying wafers 6, which are liquid-added materials, onto the wafer and sequentially transporting the wafers. A gate portion 11 having an openable and closable Inl0 for introducing a wafer transfer means into the reactor is provided in a protruding manner in the reactor. Further, a heating means 8 is provided on the f side of the wafer sample stage 4, and heats the wafer 6 to a predetermined temperature (for example, about 400 to 500° C.). Reference numeral 9 is a cover for the heating means.

[Problems to be Solved by the Invention] In the conventional CVD thin film forming apparatus, as the film forming reaction process continues, flakes of oxides such as SiO and/or 5i02 are formed and adhered to the inner wall surface of the reactor. come. If these flakes are left as they are, they will gradually grow in size and fall off from the wall due to slight vibrations or air currents, increasing the amount of floating foreign matter in the reactor.

Since the gate part protruded from the reactor main body, floating foreign matter tended to stagnate after the film-forming reaction. In particular, stagnant floating foreign matter often settled and fell onto the horizontal wall surface of the protruding gate portion.

When the gate door is opened to carry wafers into the reactor or to take wafers out of the reactor, foreign particles floating in the reactor or deposited on the horizontal walls of the protruding gate may be removed. , it is blown out from the gate due to the pressure difference inside and outside the furnace or due to thermophoresis. This blown foreign matter has a high probability of adhering to wafers waiting to be carried in outside the gate section.

Not only the blown foreign matter but also dust floating in the atmosphere may adhere to the wafer while it is waiting to be carried in.

In this specification, these foreign substances in the furnace and dust in the atmosphere are collectively referred to as "dust."

When these dusts adhere to the surface t of the wafer, pinholes are generated in the CVD film. If these dusts adhere to the surface of the wafer and cause pinholes in the CVD film, the manufacturing yield of semiconductor devices will be significantly reduced.

It is essential to transport the wafer, and the gate section is absolutely necessary to minimize the temperature drop of the wafer mounting table at that time.

The above-mentioned problems may occur not only in CVD thin film forming apparatuses but also in all types of gas phase reactors in which wafers are taken in and out of a reactor through a gate section.

Therefore, the object of the present invention is to, when the door of the gate section is opened,
It is an object of the present invention to provide a gas phase reaction device in which dust is prevented from being blown out from a gate portion and attached to wafers waiting to be carried in outside the furnace.

[Pth stage for solving the problems] In order to solve the above-mentioned problems and also achieve the object of the present invention, the present invention provides A gas phase reactor in which a dust suction stage of at least one side 1- is arranged adjacent to the gate part. provide.

[Function] As described above, according to the gas phase reaction apparatus of the present invention, the dust suction means is disposed adjacent to the door of the gate section. When the door of the gate section is opened, the dust blown out of the furnace is sucked by the dust suction means before reaching the wafer.

As a result, the t+J ability for dust to adhere to the wafer is significantly reduced.

As a result, the production yield of 14 conductor elements γ is improved without the occurrence of pinholes.

[Embodiments] Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings.

FIG. 1 is an aS partial sectional view of a gas phase reactor having a dust suction means according to the present invention.

In FIG. 1, the same members, mechanisms, etc. as in FIG. 3 are designated by the same reference numerals.

As shown in FIG. 1, also in the gas phase reactor of the present invention, a gate portion 11 is provided protruding from the reactor 1. The gate part 11 has a door 10 that can be opened and closed. This door 10 is supported by a rotating shaft 13, and the door 10 is opened and closed by rotating this rotating shaft by a drive source (not shown). Ijf! 10 (111) A sealing hole 14 such as a gasket is provided on the outer periphery of the sealing hole 111 to improve airtightness.

A dust suction means 20 is disposed adjacent to the door 10 at a position that does not interfere with opening and closing of the door. The suction means can be in the shape of a pipe as shown. This pipe is connected to a suitable air system (not shown). The IJ gas system can be a concentrated υ1 gas system of the r field, or alternatively, a German Xr 1 ゛ [υ] air means such as an empty pump can also be used.

It is preferable that the dust suction 13 stage 20 be arranged at a position 1- from the wafer transport means 7. The number of dust suction stages provided must be one side [''.

It is more effective to arrange a plurality of them at equal intervals in the L part of the gate. In FIG. 1, the number of suction pipes is not limited to the number shown, and it is of course possible to arrange three suction pipes.

The dust suction stage 20 is not limited to a pipe shape as shown in FIG. 1, but for example, as shown in FIG. It is also possible to have a duct shape 30 that surrounds it. The number of υ1 air vibrators 32 connected to the duct 30 is not particularly limited. Similarly, duct suction n34 11 old-1
The width (w) is also not particularly limited. However, if it is too wide, the suction power will be weakened, which is not preferable.

It is preferable that suction be performed continuously during wafer transport. Alternatively, suction is started at the same time as the door 10 is opened, and suction is continued for a predetermined period of time (for example, about 2 to 5 minutes) to collect dust IJ1 that has come out of the furnace. It is also possible to start the wafer transfer operation after the amount decreases. Naturally, suction can be continued even during wafer transport. Suction before wafer transfer should not be too long. This is because it causes the throughput to become low in power.

Thus, the amount of dust emitted outside the furnace that reaches the wafer surface is significantly reduced. As a result, the manufacturing yield of semiconductor devices is improved.

The gas phase reactor having the foreign matter removal mechanism of the present invention includes:
Since the amount of foreign matter generated is relatively large, an atmospheric pressure type auto-revolution type CVD thin film forming apparatus in which wafers are loaded or unloaded through a gate section is particularly suitable.

However, the present invention is not limited to the CVD thin film forming apparatus, but also includes a metal film-covering apparatus using a type of gas phase reactor (for example, a dry etching apparatus, an epitaxial growth apparatus, a PVI) in which a wafer is transferred into and out of a reactor by means of a wafer transfer means,
The same method can be applied to oxidation/diffusion devices, etc.).

[Effects of the Invention (1) As described above, according to the gas phase reaction apparatus of the present invention, the dust suction means is disposed adjacent to the door of the gate section.

When the door of the gate section is opened, the dust blown out of the furnace is sucked by the dust suction L stage before reaching the wafer.

As a result, the possibility of dust adhering to the wafer is significantly reduced.

In this way, the occurrence of pinholes is eliminated, and the conductor element r
The manufacturing yield is improved.

[Brief explanation of drawings]

Fig. 1 is a schematic partial sectional view of a gas phase reactor having a dust suction means according to the present invention, Fig. 2 is a perspective view showing another example of the arrangement of the dust suction stage, and Fig. 3 is a '111 of a conventional apparatus. FIG. 1... JM furnace, 2... Buff γ, 3...
Bellja. 4... Wafer sample stand, 6... Wafer, 7... Wafer transport table/stage, 8... Heating plate/stage, 9... Heater cover. 11...Gate part, 12...Gate part opening/closing door.

Claims (3)

[Claims] (1) In a gas phase reactor equipped with an openable and closable gate for carrying wafers into or out of the reactor, at least one dust suction means is disposed adjacent to the gate. A gas phase reactor characterized by: (2) The gas phase reaction apparatus according to claim 1, wherein the dust suction means is of a vacuum suction type. (3) The gas phase reactor according to claim 1, wherein the reactor is a revolution-rotation type atmospheric pressure CVD reactor.