JPS63249945A - Optical pickup - Google Patents
Optical pickupInfo
- Publication number
- JPS63249945A JPS63249945A JP62085269A JP8526987A JPS63249945A JP S63249945 A JPS63249945 A JP S63249945A JP 62085269 A JP62085269 A JP 62085269A JP 8526987 A JP8526987 A JP 8526987A JP S63249945 A JPS63249945 A JP S63249945A
- Authority
- JP
- Japan
- Prior art keywords
- beam splitter
- polarizing beam
- recording medium
- semiconductor laser
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Optical Head (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体レーザな光源として有し、この半導体
レーザからの光束を微小なスポットとして情報記録媒体
に照射して、情報を記録及び再生のいずれか、或いはそ
の両方を行う光学ピックアップに関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention has a semiconductor laser as a light source, and records and reproduces information by irradiating an information recording medium with a light beam from the semiconductor laser as a minute spot. This invention relates to an optical pickup that performs either or both of the following.
従来、情報記録媒体たとえばコンパクトディスクに記録
された情報を正確に再生するのに用いられる光学ピック
アップは、光源である半導体レーザから情報記録媒体へ
向かう光束と、情報記録媒体において反射され、光検出
器へ向かう光束とを分離するにあたって、偏光ビームス
プリッタと局波長板を使用してアイソレータを構成して
いた。Conventionally, optical pickups used to accurately reproduce information recorded on information recording media, such as compact discs, emit a beam of light from a semiconductor laser as a light source toward the information recording medium, and a light beam that is reflected by the information recording medium and is detected by a photodetector. In order to separate the light beams directed to the beam, an isolator was constructed using a polarizing beam splitter and a local wavelength plate.
他方、近年注目を浴びている光カードはその形状がカー
ド状であることから、持ち運びの容易さが注目されてい
る。しかしながら、光カードを応力のかかった状態で長
時間に渡って携帯あるいは保管を行うと、光カードの保
護層の材料として用いられるポリカーボネート(PC)
は、その内部において局所的に状態の異なる複屈折を生
じる可能性がある。このような光カードを上述したアイ
ソレータ構成を有する光学ピックアップにおいて再生す
るならば、光検出器へ到達する光量が複屈折状態の場所
むらの影響を受け、この結果、本来の情報により光量が
変動したのか、複屈折の存在により変動したのかの区別
がつかず、誤読を生じると云う不都合がある。On the other hand, optical cards, which have been attracting attention in recent years, have a card-like shape and are attracting attention for their ease of carrying. However, if an optical card is carried or stored under stress for a long time, polycarbonate (PC), which is used as the material for the protective layer of the optical card, may
may cause locally different birefringence within it. If such an optical card is reproduced using an optical pickup having the above-mentioned isolator configuration, the amount of light reaching the photodetector will be affected by the unevenness of the birefringent state, and as a result, the amount of light will fluctuate depending on the original information. It is difficult to distinguish whether the change is caused by the presence of birefringence or by the presence of birefringence, resulting in misreading.
この欠点を除去するために、局波長板は使わず偏光ビー
ムスプリッタのかわりにハーフミラ−(無偏光ビームス
プリッタ)で光路を分離した方式が提案されている。In order to eliminate this drawback, a system has been proposed in which the optical path is separated using a half mirror (non-polarizing beam splitter) instead of a polarizing beam splitter without using a local wavelength plate.
まず無偏光ビームスプリッタを用いた従来の光学ピック
アップの構成を第8図を用いて説明する。第8図におい
て、1は半導体レーザ3,2はコリメータレンズ、3は
無偏光ビームスプリッタ。First, the configuration of a conventional optical pickup using a non-polarizing beam splitter will be explained with reference to FIG. In FIG. 8, 1 is a semiconductor laser 3, 2 is a collimator lens, and 3 is a non-polarizing beam splitter.
4は対物レンズ、5はディスク、51はディスク5の透
明保護層、52はディスク5の情報記録媒体層、53は
ディスク5の支持基板、6は集光レンズ、7は光検出器
である。4 is an objective lens, 5 is a disk, 51 is a transparent protective layer of the disk 5, 52 is an information recording medium layer of the disk 5, 53 is a supporting substrate of the disk 5, 6 is a condenser lens, and 7 is a photodetector.
半導体レーザ1から出射した光束は、コリメータレンズ
2によって平行光束とされ、無偏光ビームスプリッタ3
を透過し対物レンズ4でディスク5の情報記録媒体層5
2上に微小なスポットとして結像される。The light beam emitted from the semiconductor laser 1 is made into a parallel light beam by a collimator lens 2, and is then converted into a parallel light beam by a non-polarizing beam splitter 3.
The information recording medium layer 5 of the disk 5 is transmitted through the objective lens 4.
2 is imaged as a minute spot.
ディスク5の情報記録媒体層52からの反射光は、再び
対物レンズ4によって平行光束となる。The reflected light from the information recording medium layer 52 of the disk 5 is turned into a parallel light beam by the objective lens 4 again.
そして無偏光ビームスプリッタ3で反射され、集光レン
ズ6を経て、光検出器7に達する。これにより、公知の
方法を用いて、RF信号の検出、フォーカス制御、トラ
ッキング制御などが行われる。また、この系によって同
様に情報の記録・消去も行われる。The light is then reflected by the non-polarizing beam splitter 3, passes through the condenser lens 6, and reaches the photodetector 7. Thereby, RF signal detection, focus control, tracking control, etc. are performed using known methods. Furthermore, information is also recorded and erased using this system.
また、第9図に上記無偏光ビームスプリッタ3の断面模
式図を示す。第9図において、31゜32はプリズムで
あり、前記プリズム31の斜辺上に順に誘電体薄膜3り
、銀膜34.誘電体薄膜35を蒸着し、接着剤36によ
りプリズム32と接着されている。Further, FIG. 9 shows a schematic cross-sectional view of the non-polarizing beam splitter 3. In FIG. 9, 31.degree. 32 is a prism, and on the oblique side of the prism 31, a dielectric thin film 3, a silver film 34, . A dielectric thin film 35 is deposited and bonded to the prism 32 with an adhesive 36.
このような従来の光学ピックアップには、以下のような
欠点がある。Such conventional optical pickups have the following drawbacks.
半導体レーザ1からの光束は、無偏光ビームスプリッタ
3を透過する際に、その光束の1部が図中矢印の方向へ
反射されるので、ディスク5へ到達する光量が低下する
。この現象を防ぐために無偏光ビームスプリッタ3の銀
膜34の厚みを薄くすることにより透過率を上げる手段
が考えられるが、前記銀膜34を薄く蒸着することを試
みると、前記銀膜34は巨視的に見れば島状に蒸着され
、均一な膜特性を得ることがはなはだ困難である。した
がってディスク5の情報記録媒体層52の感度を向上さ
せる必要があるがこれにも自から限界がある。或いは時
間を充分あたえて記録を行う必要を生じ、記録速度の低
速化を招く。更には半導体レーザをより高出力な物を使
用することも可能ではあるが装置の高価格につながる。When the light beam from the semiconductor laser 1 passes through the non-polarizing beam splitter 3, a portion of the light beam is reflected in the direction of the arrow in the figure, so that the amount of light reaching the disk 5 is reduced. In order to prevent this phenomenon, it is possible to increase the transmittance by reducing the thickness of the silver film 34 of the non-polarizing beam splitter 3. However, if an attempt is made to deposit the silver film 34 thinly, the silver film 34 becomes macroscopic. From a physical perspective, the film is deposited in islands, making it extremely difficult to obtain uniform film characteristics. Therefore, it is necessary to improve the sensitivity of the information recording medium layer 52 of the disc 5, but this also has its limits. Alternatively, it becomes necessary to perform recording for a sufficient amount of time, resulting in a decrease in the recording speed. Furthermore, although it is possible to use a semiconductor laser with a higher output power, this would lead to a higher cost of the device.
本発明の目的は、上記構成の光学ピックアップの欠点を
解消し、安いコストで信頼性の高い光学ピックアップを
提供することにある。An object of the present invention is to eliminate the drawbacks of the optical pickup having the above configuration and to provide a highly reliable optical pickup at low cost.
本発明の上記目的は、情報記録媒体に照射される光束を
発する半導体レーザと、前記半導体レーザから情報記録
媒体に至る光路中に配され、前記情報記録媒体からの反
射光束を半導体レーザからの入射光束と分離する面を有
する無偏光ビームスプリッタと、前記分離された反射光
束を検出する手段とから成る光学ピックアップにおいて
、前記無偏光ビームスプリッタが、前記半導体レーザか
らの入射光束を反射して前記情報記録媒体に導くことに
よって達成される。The above-mentioned object of the present invention is to provide a semiconductor laser that emits a light flux that is irradiated onto an information recording medium, and a semiconductor laser that is disposed in an optical path from the semiconductor laser to the information recording medium, and that emits a light flux reflected from the information recording medium that is incident on the semiconductor laser. In an optical pickup comprising a non-polarizing beam splitter having a surface that separates the light beam, and means for detecting the separated reflected light beam, the non-polarizing beam splitter reflects the incident light beam from the semiconductor laser to detect the information. This is accomplished by directing the information to a recording medium.
(実施例〕
第1図は本発明を光デイスク装置に適用した実施例を示
す概略図である。図中、第8図と同一の部材には共通の
符号を附した。半導体レーザ1から出射した光束は、コ
リメータレンズ2によって平行光束とされ、無偏光ビー
ムスプリッタ3で反射され対物レンズ4でディスク5の
情報記録媒体層52上に微小なスポットとして結像され
る。(Embodiment) FIG. 1 is a schematic diagram showing an embodiment in which the present invention is applied to an optical disk device. In the figure, the same members as in FIG. The resulting light beam is made into a parallel light beam by the collimator lens 2, reflected by the non-polarizing beam splitter 3, and imaged by the objective lens 4 as a minute spot on the information recording medium layer 52 of the disk 5.
ディスク5の情報記録媒体層52からの反射光は、再び
対物レンズ4によって平行光束となる。The reflected light from the information recording medium layer 52 of the disk 5 is turned into a parallel light beam by the objective lens 4 again.
そして無偏光ビームスプリッタ3を透過し、集光レンズ
6を経て、光検出器7に達する。これにより、公知の方
法を用いて、RF倍信号検出、フォーカス制御、トラッ
キング制御などが行われる。また、この系によって同様
に情報の記録・消去も行われる。The light then passes through the non-polarizing beam splitter 3, passes through the condensing lens 6, and reaches the photodetector 7. Thereby, RF multiplied signal detection, focus control, tracking control, etc. are performed using known methods. Furthermore, information is also recorded and erased using this system.
また、第2図に上記無偏光ビームスプリッタ3の断面4
莫式図を示す。第2図において、3、。In addition, FIG. 2 shows a cross section 4 of the non-polarizing beam splitter 3.
Shows Mo-style diagram. In FIG. 2, 3.
32はプリズムであり、前記プリズム3Iの斜辺上に順
に誘電体薄膜33.銀+1!!34.誘電体薄膜35を
蒸着し、接着剤36によりプリズム32と接着されてい
る。32 is a prism, and dielectric thin films 33 . Silver +1! ! 34. A dielectric thin film 35 is deposited and bonded to the prism 32 with an adhesive 36.
第3図は、無偏光ビームスプリッタ3で半導体レーザ1
から出射した光束をディスク5上に導く場合における前
記ディスク5への入射光量、光検出器7への入射光量と
前記無偏光ビームスプリッタ30反射率との関係を示す
概略図である。ここで、RAは反射率のS成分とP成分
の平均値な表わす。Figure 3 shows a semiconductor laser 1 with a non-polarizing beam splitter 3.
FIG. 3 is a schematic diagram showing the relationship between the amount of light incident on the disk 5, the amount of light incident on the photodetector 7, and the reflectance of the non-polarizing beam splitter 30 when the light beam emitted from the optical fiber is guided onto the disk 5. Here, RA represents the average value of the S component and the P component of the reflectance.
好ましい無偏光ビームスプリッタ30反射率特性につい
て考えてみると、ディスク5に良好に情報を記録・再生
を行うためには、半導体レーザ1から出射した光束を前
記無偏光ビームスプリッタ3で効率良く反射させ前記デ
ィスク5に導く必要がある。したがって次の条件を満足
しなければならない。Considering the preferable reflectance characteristics of the non-polarizing beam splitter 30, in order to properly record and reproduce information on the disk 5, the light beam emitted from the semiconductor laser 1 must be efficiently reflected by the non-polarizing beam splitter 3. It is necessary to guide it to the disk 5. Therefore, the following conditions must be satisfied.
RA≧50% ・・・(1)もちろ
ん、前記ディスク5の記録状態は前記無偏光ビームスプ
リッタ3の反射率特性のみにより決まるものではなく、
半導体レーザ1の出力、ディスク5の回転スピード、前
記ディスク5の情報記録媒体層52上に形成されるビー
ムスポットの大きさ、前記情報記録媒体層52の感度等
のパラメーターが影響することは明らかであるが、総合
的に無理なく安いコストで高い信頼性の光ピツクアップ
を提供することを考えた場合、反射率RAが50%以上
の無偏光ビームスプリッタ3を使用することが望ましい
。RA≧50% (1) Of course, the recording state of the disk 5 is not determined only by the reflectance characteristics of the non-polarizing beam splitter 3;
It is clear that parameters such as the output of the semiconductor laser 1, the rotational speed of the disk 5, the size of the beam spot formed on the information recording medium layer 52 of the disk 5, and the sensitivity of the information recording medium layer 52 have an effect. However, when considering providing a highly reliable optical pickup at a reasonably low cost overall, it is desirable to use a non-polarizing beam splitter 3 with a reflectance RA of 50% or more.
また、ディスク5から良好に情報の再生・記録を行うた
めには、ディスク5からの反射光を前記無偏光ビームス
プリッタ3て効率良く透過させ光検出器7に導く必要が
ある。したがって次の条件を満足しなければならない。Further, in order to properly reproduce and record information from the disc 5, it is necessary to efficiently transmit the reflected light from the disc 5 through the non-polarizing beam splitter 3 and guide it to the photodetector 7. Therefore, the following conditions must be satisfied.
RA≦80% ・・・(2)もちろん
、前記光検出器7の検出状態は前記無偏光ビームスプリ
ッタ3の反射率特性のみにより決まるものではなく、前
記光検出器7の感度、前記光検出器7に接続している電
気回路等のパラメーターが影響することは明らかである
が、総合的に無理なく安いコストで高い信頼性の光ピツ
クアップを提供することを考えた場合、反射率RAが8
0%以下の無偏光ビームスプリッタ3を使用することが
望ましい。RA≦80% (2) Of course, the detection state of the photodetector 7 is not determined only by the reflectance characteristics of the non-polarizing beam splitter 3, but also depends on the sensitivity of the photodetector 7, the photodetector It is clear that the parameters of the electrical circuit connected to 7 have an effect, but if we consider providing a highly reliable optical pickup at a reasonable and low cost overall, the reflectance RA should be 8.
It is desirable to use a non-polarizing beam splitter 3 with a polarization ratio of 0% or less.
次に前記無偏光ビームスプリッタ3の実際の膜構成例を
2つ示す。誘電体薄膜33.35に光学的膜厚245n
mの酸化ジルコニウム、銀膜34の幾何学的膜厚を24
nmとしたものの分光特性図を第4図に示す。第4図に
おいて、Rs。Next, two examples of actual film configurations of the non-polarizing beam splitter 3 will be shown. Optical thickness 245n for dielectric thin film 33.35
m of zirconium oxide, the geometric thickness of the silver film 34 is 24
FIG. 4 shows a spectral characteristic diagram of the wavelength of nm. In FIG. 4, Rs.
R,、T、、T、は順にS成分の反射率、P成分の反射
率、S成分の透過率、P成分の透過率を表わし、RA、
TAはそれぞれ反射率、透過率のS成分とP成分の平均
値を表わす。また誘電体薄11u33.3sに光学的膜
厚245nmの酸化ジルコニウム、銀膜34の幾何学的
膜厚を34nmとしたものの分光特性図を第5図に示す
。図中に用いた記号の説明は前述しであるのでここでは
省略する。R,,T,,T,indicate the reflectance of the S component, the reflectance of the P component, the transmittance of the S component, and the transmittance of the P component, and RA,
TA represents the average value of the S component and P component of reflectance and transmittance, respectively. FIG. 5 shows a spectral characteristic diagram of a dielectric thin film 11u33.3s with zirconium oxide having an optical thickness of 245 nm and a silver film 34 having a geometric thickness of 34 nm. Explanations of the symbols used in the figures have been described above and will therefore be omitted here.
本発明は上述の実施例に限られず種々の応用か可能であ
る。例えば、第6図のように無偏光ビームスプリッタ3
により生じたゴースト光が光検出器7に入射しないよう
に前記無偏光ビームスプリッタ3の面3.を傾けるよう
にしたもの、第7図のように無偏光ビームスプリッタ3
が半導体レーザ1の出射光束のビーム整形機能を有する
ようにしたものなどが考えられる。The present invention is not limited to the above-described embodiments, and can be applied in various ways. For example, as shown in Fig. 6, a non-polarizing beam splitter 3
The surface 3. of the non-polarizing beam splitter 3 is designed to prevent ghost light generated by the beam from entering the photodetector 7. A non-polarizing beam splitter 3 as shown in Figure 7.
It is conceivable to have a beam shaping function for the light beam emitted from the semiconductor laser 1.
本発明は光カート記録再生装置、デジタルオーディオデ
ィスク装置、ビデオディスク装置等、他の光学的記録再
生装置に用いられる光学ピックアツブに応用しても、同
様の効果が得られる。Similar effects can be obtained even when the present invention is applied to an optical pick-up used in other optical recording and reproducing devices such as an optical cart recording and reproducing device, a digital audio disc device, and a video disc device.
以上説明したように、従来の光学ピックアップにおいて
、無偏光ビームスプリッタが、半導体レーザからの入射
光束を反射して情報記録媒体に導くことによって、安い
コストで高い信頼性の光学ピックアップを提供するもの
である。As explained above, in conventional optical pickups, non-polarizing beam splitters reflect the incident light beam from the semiconductor laser and guide it to the information recording medium, thereby providing a highly reliable optical pickup at low cost. be.
第1図及び第2図は本発明の光学ピックアップの一実施
例を説明する図、第3図はディスクへの入射光量、光検
出器への入射光量と無偏光ビームスプリッタの反射率と
の関係を示す概略図、第4図及び第5図は本発明の光学
ピックアップに用いられる無偏光ビームスプリッタの分
光特性図、第6図及び第7図は本発明の光学ピックアッ
プの他の実施例を示す図、第8図及び第9図は従来の光
学ピックアップを説明する図である。
1・・・半導体レーザ、 2・・・コリメータレンズ
、3・・・無偏光ビームスプリッタ、Figures 1 and 2 are diagrams explaining one embodiment of the optical pickup of the present invention, and Figure 3 is the relationship between the amount of light incident on the disk, the amount of light incident on the photodetector, and the reflectance of the non-polarizing beam splitter. FIGS. 4 and 5 are spectral characteristic diagrams of a non-polarizing beam splitter used in the optical pickup of the present invention, and FIGS. 6 and 7 show other embodiments of the optical pickup of the present invention. 8 and 9 are diagrams explaining a conventional optical pickup. 1... Semiconductor laser, 2... Collimator lens, 3... Non-polarizing beam splitter,
Claims (2)
ーザと、前記半導体レーザから情報記録媒体に至る光路
中に配され、前記情報記録媒体からの反射光束を半導体
レーザからの入射光束と分離する面を有する無偏光ビー
ムスプリッタと、前記分離された反射光束を検出する手
段とから成る光学ピックアップにおいて、 前記無偏光ビームスプリッタが、前記半導体レーザから
の入射光束を反射して前記情報記録媒体に導くことを特
徴とする光学ピックアップ。(1) A semiconductor laser that emits a light beam that is irradiated onto an information recording medium; and a semiconductor laser that is arranged in an optical path from the semiconductor laser to the information recording medium, and that separates the reflected light beam from the information recording medium from the incident light beam from the semiconductor laser. In an optical pickup comprising a non-polarizing beam splitter having a surface and means for detecting the separated reflected light beam, the non-polarizing beam splitter reflects the incident light beam from the semiconductor laser and guides it to the information recording medium. An optical pickup characterized by:
とP成分の平均値R_Aが50%以上であり、かつ80
%以下であることを特徴とする特許請求の範囲第1項記
載の光学ピックアップ。(2) The non-polarizing beam splitter has an average value R_A of the S component and P component of the reflectance of 50% or more, and 80% or more.
% or less. % or less.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62085269A JPS63249945A (en) | 1987-04-07 | 1987-04-07 | Optical pickup |
US07/483,966 US4973836A (en) | 1987-03-31 | 1990-02-15 | Optical pickup device including a beam splitter having an inclined plane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62085269A JPS63249945A (en) | 1987-04-07 | 1987-04-07 | Optical pickup |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63249945A true JPS63249945A (en) | 1988-10-17 |
Family
ID=13853849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62085269A Pending JPS63249945A (en) | 1987-03-31 | 1987-04-07 | Optical pickup |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63249945A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03132933A (en) * | 1989-10-19 | 1991-06-06 | Canon Inc | Semiconductor laser output stabilizing device |
JP2014224891A (en) * | 2013-05-16 | 2014-12-04 | セイコーエプソン株式会社 | Optical element and display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627932A (en) * | 1979-08-16 | 1981-03-18 | Yoshiaki Nagaura | Manufacture of integrated circuit |
-
1987
- 1987-04-07 JP JP62085269A patent/JPS63249945A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627932A (en) * | 1979-08-16 | 1981-03-18 | Yoshiaki Nagaura | Manufacture of integrated circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03132933A (en) * | 1989-10-19 | 1991-06-06 | Canon Inc | Semiconductor laser output stabilizing device |
JP2014224891A (en) * | 2013-05-16 | 2014-12-04 | セイコーエプソン株式会社 | Optical element and display device |
US10061133B2 (en) | 2013-05-16 | 2018-08-28 | Seiko Epson Corporation | Optical element and display apparatus |
US10324302B2 (en) | 2013-05-16 | 2019-06-18 | Seiko Epson Corporation | Optical element and display apparatus |
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