JPS63243941A - Photoresist stripping liquid - Google Patents
Photoresist stripping liquidInfo
- Publication number
- JPS63243941A JPS63243941A JP7634787A JP7634787A JPS63243941A JP S63243941 A JPS63243941 A JP S63243941A JP 7634787 A JP7634787 A JP 7634787A JP 7634787 A JP7634787 A JP 7634787A JP S63243941 A JPS63243941 A JP S63243941A
- Authority
- JP
- Japan
- Prior art keywords
- stripping
- exhibiting
- aromatic
- component
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 15
- 239000007788 liquid Substances 0.000 title abstract description 5
- -1 xylenes and cumene Chemical class 0.000 claims abstract description 11
- SLGOCMATMKJJCE-UHFFFAOYSA-N 1,1,1,2-tetrachloro-2,2-difluoroethane Chemical class FC(F)(Cl)C(Cl)(Cl)Cl SLGOCMATMKJJCE-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims abstract description 8
- 150000002989 phenols Chemical class 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 5
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical class OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- UGCSPKPEHQEOSR-UHFFFAOYSA-N 1,1,2,2-tetrachloro-1,2-difluoroethane Chemical compound FC(Cl)(Cl)C(F)(Cl)Cl UGCSPKPEHQEOSR-UHFFFAOYSA-N 0.000 abstract description 4
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- OSWPMRLSEDHDFF-UHFFFAOYSA-N methyl salicylate Chemical compound COC(=O)C1=CC=CC=C1O OSWPMRLSEDHDFF-UHFFFAOYSA-N 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- MNURPFVONZPVLA-UHFFFAOYSA-N 2-chlorobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1Cl MNURPFVONZPVLA-UHFFFAOYSA-N 0.000 abstract description 2
- RHMPLDJJXGPMEX-UHFFFAOYSA-N 4-fluorophenol Chemical compound OC1=CC=C(F)C=C1 RHMPLDJJXGPMEX-UHFFFAOYSA-N 0.000 abstract description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 abstract description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 abstract description 2
- 229960001047 methyl salicylate Drugs 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 231100000419 toxicity Toxicity 0.000 abstract description 2
- 230000001988 toxicity Effects 0.000 abstract description 2
- 239000008096 xylene Substances 0.000 abstract description 2
- 150000003739 xylenols Chemical class 0.000 abstract description 2
- 239000000306 component Substances 0.000 abstract 5
- 230000001747 exhibiting effect Effects 0.000 abstract 3
- BHNZEZWIUMJCGF-UHFFFAOYSA-N 1-chloro-1,1-difluoroethane Chemical compound CC(F)(F)Cl BHNZEZWIUMJCGF-UHFFFAOYSA-N 0.000 abstract 1
- 230000001236 detergent effect Effects 0.000 abstract 1
- 150000003738 xylenes Chemical class 0.000 abstract 1
- 239000003513 alkali Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229950011008 tetrachloroethylene Drugs 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 231100000053 low toxicity Toxicity 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JIRHAGAOHOYLNO-UHFFFAOYSA-N (3-cyclopentyloxy-4-methoxyphenyl)methanol Chemical compound COC1=CC=C(CO)C=C1OC1CCCC1 JIRHAGAOHOYLNO-UHFFFAOYSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical class ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 1
- KALSHRGEFLVFHE-UHFFFAOYSA-N 2,4-dichloro-1-(trifluoromethyl)benzene Chemical class FC(F)(F)C1=CC=C(Cl)C=C1Cl KALSHRGEFLVFHE-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical class ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- IWVKTOUOPHGZRX-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.COC(=O)C(C)=C IWVKTOUOPHGZRX-UHFFFAOYSA-N 0.000 description 1
- 229940095102 methyl benzoate Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体製造工程におけるフォトレジスト剥離
時に用いる剥離液に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a stripping solution used for stripping photoresist in a semiconductor manufacturing process.
［従来の技術及びその問題点］
半導体製造工程において、シリコンウエノ＼−上に回路
パターンを形成させる際、フォトレジストを塗布し、露
光・現像・エツチング等のプロセスを経て、最終的に不
要となったレジストを剥離除去する。[Prior art and its problems] In the semiconductor manufacturing process, when forming a circuit pattern on silicon wafer, a photoresist is applied, and through processes such as exposure, development, and etching, it is finally unnecessary. Peel off and remove the resist.
レジストの剥離工程では、一般にレジスト剥離液と呼ば
れるものにウニ／＼−を浸漬してレジストを除去する。In the resist stripping process, the resist is removed by immersing the sea urchin in what is generally called a resist stripping solution.
レジスト剥離液としては、テトラクロルエチレン、０−
ジクロルベンゼンなどの塩素系溶剤をベースとしたもの
が、主流となっている。As a resist stripper, tetrachlorethylene, 0-
The mainstream is those based on chlorinated solvents such as dichlorobenzene.
しかしながら、こういった塩素系溶剤は、毒性が高く、
例えば、作業許容濃度は、テトラクロロエチレン、０−
ジクロルベンゼンのいずれも５０ｐｐｍと低い値となっ
ている。さらに、環境問題の視点からすれば、地下水汚
染について、特にテトラクロロエチレンの使用について
は、問題視されつつある。従って、毒性面を考慮して塩
素系溶剤の成分を何らかの他の低毒性物質に代替する必
要性がある。However, these chlorinated solvents are highly toxic and
For example, the working permissible concentration is tetrachlorethylene, 0-
All of the dichlorobenzene values were as low as 50 ppm. Furthermore, from the perspective of environmental issues, groundwater contamination, particularly the use of tetrachlorethylene, is becoming a problem. Therefore, there is a need to replace the components of the chlorinated solvent with some other low-toxicity substance in consideration of toxicity.
また、上述の如きレジスト剥離液は、可燃物であり、ラ
イン設備の運転上、危険をはらんでいるという欠点があ
った。Furthermore, the above-mentioned resist stripping liquid has the disadvantage that it is flammable and poses a danger to the operation of line equipment.
［問題点を解決するための手段］
本発明は、前述の問題点を解決すべくなされたものであ
り、下記化合物（ａ）〜（ｄ）を必須成分として含有す
ることを特徴とするフォトレジスト剥離液に関するもの
である。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and provides a photoresist characterized by containing the following compounds (a) to (d) as essential components. This relates to stripping liquid.
（ａ）テトラクロロジフルオロエタン
（ｂ）フェノール類
（ｃ）芳香族炭化水素類、ハロゲン化芳香族炭化水素類
、及び芳香族カルボン酸エステル類から選ばれる少なく
とも１種の化合物。(a) Tetrachlorodifluoroethane (b) Phenols (c) At least one compound selected from aromatic hydrocarbons, halogenated aromatic hydrocarbons, and aromatic carboxylic acid esters.
（ｄ）芳香族スルホン酸類
本発明では、主成分としてテトラクロロジフルオロエタ
ンを使用するが、テトラクロロジフルオロエタンは、テ
トラクロロ−１，２−ジフルオロエタン（Ｒ−１１２）
と、テトラクロロ−１，１−ジフルオロエタン（Ｒ−１
１２ａ）の異性体が知られており、これらは、物性が類
似しているので、これらを単独で又は、組み合せて使用
することができる。Ｒ−１１２は沸点が９２．８℃、Ｒ
−１１２ａは灯点が８１．５℃であり、いずれもＫＢ値
が約７０で、許容濃度が５００ｐｐｍと低毒性であるた
め、洗浄溶剤として極めて優れている。(d) Aromatic sulfonic acids In the present invention, tetrachlorodifluoroethane is used as the main component, and tetrachlorodifluoroethane is tetrachloro-1,2-difluoroethane (R-112).
and tetrachloro-1,1-difluoroethane (R-1
Isomers of 12a) are known, and since these have similar physical properties, they can be used alone or in combination. R-112 has a boiling point of 92.8℃, R
-112a lights up at 81.5°C, has a KB value of about 70, and has low toxicity with an allowable concentration of 500 ppm, making it extremely excellent as a cleaning solvent.
第二成分として、ポジレジスト（フェノール樹脂系等）
に対する溶解力を向上させるため、フェノールまたは、
キシレノールまたはｐ−フルオロフェノール等のフェノ
ール類を使用する。As a second component, positive resist (phenolic resin, etc.)
Phenol or
Phenols such as xylenol or p-fluorophenol are used.
第三成分として、ネガレジスト（環化ゴム樹脂系等）に
対する溶解力を向上させるため、キシレン、クメン、エ
チルベンゼン等の芳香族炭化水素類や、サリチル酸メチ
ル、安息香酸メチル等の芳香族カルボン酸エステル類あ
るいは、ペンゾトリフルオリド、２，４−ジクロロベン
ゾトリフルオリド、トリクロロベンゼン、クロロトルエ
ン等のハロゲン化芳香族炭化水素類から選ばれる少なく
とも１種の化合物を使用する。As the third component, aromatic hydrocarbons such as xylene, cumene, and ethylbenzene, and aromatic carboxylic acid esters such as methyl salicylate and methyl benzoate are used to improve the dissolving power for negative resists (cyclized rubber resins, etc.). or halogenated aromatic hydrocarbons such as penzotrifluoride, 2,4-dichlorobenzotrifluoride, trichlorobenzene, and chlorotoluene.
第四成分として、剥離的効果を向上させるために、ベン
ゼンスルホン酸、クロロベンゼンスルホン酸、メチル、
インプロピル、ヘプチル、オクチル、デシル、ドデシル
等のアルキルベンゼンスルホン酸、キシレンスルホン酸
、フエ／ −）ｌ、／ ７． ルホン酸、クロロフェノ
ールスルホンｍｌの芳香族スルホン酸類、特にアルキル
ベンゼンスルホン酸類を使用する。As the fourth component, benzenesulfonic acid, chlorobenzenesulfonic acid, methyl,
Alkylbenzenesulfonic acids such as inpropyl, heptyl, octyl, decyl, dodecyl, xylene sulfonic acid, fe/-)l, /7. sulfonic acid, chlorophenolsulfone ml of aromatic sulfonic acids, especially alkylbenzenesulfonic acids.
これら４成分の組成比としてはテトラクロロジフルオロ
エタンが２０〜７０ｗｔ％、好ましくは３０〜８０ｗｔ
％、第二〜四成分がそれぞれ５〜４０ｗｔ％、好ましく
は１０〜３０ｗｔ％であり、テトラクロロジフルオロエ
タンを主体とすることが好ましい。The composition ratio of these four components is 20 to 70 wt% of tetrachlorodifluoroethane, preferably 30 to 80 wt%.
%, and the second to fourth components are each 5 to 40 wt%, preferably 10 to 30 wt%, and it is preferable that the main component is tetrachlorodifluoroethane.
本発明のフォトレジスト剥離液は、前記４成分を必須成
分として含有するものであるが、下記に例示するような
各種化合物を併用してもよい。例えば、燐酸アルカリ、
珪酸アルカリ、硼酸アルカリ、炭酸アルカリ、酢酸アル
カリ、安息香酸アルカリ等のアルカリ性水溶液、トルエ
ン、シクロヘキサン、ヘプタン等の炭化水素類、テトラ
クロロエチレン、１，１．２−トリクロロ−トリフルオ
ロエタン、 １，１．ｉトリクロロエタン、塩化メチレ
ン等の／＼ロゲン化炭化水素類、アセトン、メチルエチ
ルケトン、メチルイソブチルケトン等のケトン類、エタ
ノール、インプロパツール、ｎ−プロパツール、ベンジ
ルアルコール等のアルコール類、酢酸エチル、酢酸イソ
アミル等の脂肪族カルボン酸エステル類、エチレングリ
コールモノメチルエーテル、テトラヒドロフラン等のエ
ーテル類、ジメチルホルムアミド等のアミド類を挙げる
ことができる。Although the photoresist stripping solution of the present invention contains the above-mentioned four components as essential components, various compounds such as those exemplified below may be used in combination. For example, alkali phosphate,
Alkaline aqueous solutions such as alkali silicate, alkali borate, alkali carbonate, alkali acetate, and alkali benzoate, hydrocarbons such as toluene, cyclohexane, and heptane, tetrachloroethylene, 1,1,2-trichloro-trifluoroethane, 1,1. /\Rogenated hydrocarbons such as trichloroethane and methylene chloride, ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone, alcohols such as ethanol, impropatol, n-propatol, and benzyl alcohol, ethyl acetate, isoamyl acetate Examples include aliphatic carboxylic acid esters such as ethylene glycol monomethyl ether, ethers such as tetrahydrofuran, and amides such as dimethylformamide.
本発明により剥離し得るフォトレジストとしては、何ら
限定されず、ポジ形またはネガ形の光露光用レジスト、
遠紫外露光用レジスト、Ｘ線又は電子線用レジストを挙
げることができる。光露光用レジストの材質にはフェノ
ール及びクレゾールノボラック樹脂をベースにしたキノ
ンジアジド系、シス−１，４−ポリインプレンを主成分
とする環化ゴム系、ポリけい皮酸系等があり、遠紫外用
レジストにはポリメチルメタアクリレート、ポリメチル
インブロベニルヶトン等があり、電子線、Ｘ線レジスト
にはポリメタクリル酸メチル、メタクリル酸グリシジル
−アクリル酸エチル共重合体、メタクリル酸メチル−メ
タクリル酸共重合体等が知られているが、本発明のフォ
トレジスト剥離液はいずれにも有効である。The photoresist that can be peeled off according to the present invention is not limited in any way, and includes positive or negative light exposure resists,
Examples include resists for deep ultraviolet exposure, and resists for X-rays or electron beams. Materials for resists for light exposure include quinone diazide based on phenol and cresol novolak resins, cyclized rubber based on cis-1,4-polyinprene, polycinnamic acid, etc. Resists include polymethyl methacrylate and polymethyl imbrobenyl, and electron beam and X-ray resists include polymethyl methacrylate, glycidyl methacrylate-ethyl acrylate copolymer, and methyl methacrylate-methacrylate. Although acid copolymers and the like are known, the photoresist stripping solution of the present invention is effective for any of them.
［実施例］
実施例１
シリコンウェハー上に市販のポジレジスト（東京応化製
ＯＦ Ｐ Ｒ−８００）を塗布し、ブリベータを １０
０°Ｃ１３０分行ない、紫外線を露光してパターンを焼
付け、現像後、ポストベーク １５０℃、３０分を施し
た。さらに、ＣＦａ ガス（Ｒ−１４）ヲ用いて、バレ
ル型エツチング装置にて、 ５分間プラズマエツチング
を実施した後、本発明によるレジスト剥離液に １２０
℃で５分間浸漬した。[Example] Example 1 A commercially available positive resist (OF PR-800 manufactured by Tokyo Ohka Co., Ltd.) was coated on a silicon wafer, and Bribeta was applied for 10 minutes.
The pattern was baked at 0°C for 130 minutes, exposed to ultraviolet light, and after development, post-baked at 150°C for 30 minutes. Furthermore, plasma etching was performed for 5 minutes using CFa gas (R-14) in a barrel type etching device, and then the resist stripping solution according to the present invention was applied at 120 mL.
℃ for 5 minutes.
尚、引火点は、タグ密閉式、クリーブランド開放式によ
る。The flash point is based on the tag closed type and the Cleveland open type.
実施例２
市販のネガレジスト （東京応化製ＯＭ Ｒ−８３）を
用いて、実施例１と同様の方法で試験した。Example 2 A test was conducted in the same manner as in Example 1 using a commercially available negative resist (OM R-83 manufactured by Tokyo Ohka Co., Ltd.).
［発明の効果］
本発明のフォトレジスト剥離液は、極めて剥離性能にす
ぐれており、ポジまたはネガのレジストについて、ベー
キング、エツチング等の履歴を経てきたものに対してで
も、すぐれた剥離力を示す、また、テトラクｒ：１１ニ
アジフルオロエタンをベースとしているため低毒性であ
り、かつ、引火点が存在しないものとすることができる
。[Effects of the Invention] The photoresist stripper of the present invention has extremely excellent stripping performance, and exhibits excellent stripping power even for positive or negative resists that have undergone a history of baking, etching, etc. Furthermore, since it is based on tetrachloric r:11 difluoroethane, it has low toxicity and has no flash point.
Claims (1)
することを特徴とするフォトレジスト剥離液。 （ａ）テトラクロロジフルオロエタン （ｂ）フェノール類 （ｃ）芳香族炭化水素類、ハロゲン化芳香族炭化水素類
、及び芳香族カルボン酸エステル 類から選ばれる少なくとも１種の化合物。 （ｄ）芳香族スルホン酸類(1) A photoresist stripper containing the following compounds (a) to (d) as essential components. (a) Tetrachlorodifluoroethane (b) Phenols (c) At least one compound selected from aromatic hydrocarbons, halogenated aromatic hydrocarbons, and aromatic carboxylic acid esters. (d) Aromatic sulfonic acids
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7634787A JPS63243941A (en) | 1987-03-31 | 1987-03-31 | Photoresist stripping liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7634787A JPS63243941A (en) | 1987-03-31 | 1987-03-31 | Photoresist stripping liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63243941A true JPS63243941A (en) | 1988-10-11 |
Family
ID=13602821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7634787A Pending JPS63243941A (en) | 1987-03-31 | 1987-03-31 | Photoresist stripping liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63243941A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01114846A (en) * | 1987-10-28 | 1989-05-08 | Japan Synthetic Rubber Co Ltd | Stripping solution |
-
1987
- 1987-03-31 JP JP7634787A patent/JPS63243941A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01114846A (en) * | 1987-10-28 | 1989-05-08 | Japan Synthetic Rubber Co Ltd | Stripping solution |
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