JPS63239927A - Hetero-epitaxial structure and forming method thereof - Google Patents

Abstract

PURPOSE:To obtain a compound semiconductor hetero-epitaxy element, which is grown on a large area, by a constitution, wherein a single crystal of a group IV element, which is grown on an amorphous substrate, and a compound semiconductor layer, which is epitaxially grown on said single crystal, are provided. CONSTITUTION:The host crystal of a single crystal 4 is a group IV atom in the periodic table, which is grown on amorphous substrate 2. A compound semiconductor layer 7 is epitaxially grown on the single crystal 4. A hetero- epitaxial structure is formed with the crystal 4 and the layer 7. For example, an SiO2 film 3 and a plurality of Si single crystals 4 are formed on a ground substrate 2 comprising high melting point glass, quarts, alumina ceramics and the like. Thus a growing substrate 1 is formed. Then the growing substrate 1 undergoes heat treatment in arsine atmosphere at 950 deg.C for about 20 minutes. Thereafter, the temperature of the growing substrate is made to be 420 deg.C. As reacting gases, trimethylgallium and arsine are used. A GaAs layer 6 for a buffer is deposited to a thickness of about 120 Angstrom by an MOCVD method. The substrate temperature is increased up to 680 deg.C furthermore, and a GaAs layer 7 is grown by 6 mum.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heteroepitaxy device in which a compound semiconductor is grown on a heterogeneous substrate, and a method for manufacturing the same.

[Prior Art] Group III-V and group II-VI compound semiconductors are widely used in ultrafast electronic devices, semiconductor lasers, light emitting devices, solar cells, photodetectors, and the like. For epitaxial growth of these compound semiconductor crystals, compound semiconductor single crystal substrates such as Ga, S, and InP are used.

Elements made for this purpose are also expensive, and it is currently difficult to produce a GaAs substrate that is uniform over a large area, so it is difficult to manufacture large area compound semiconductors using epitaxial growth. It has become difficult.

For this reason, and for the purpose of compounding with St devices, attempts have been made to grow heteroepitaxially on single crystal substrates made of group IV materials (mainly Si), which are relatively large compared to GaAs substrates ( Umeno/Soga: “
Applied Physics, Vol. 55, No. 8 (+986) [Problems to be Solved by the Invention] As described above, conventional compound semiconductor heteroepitaxy devices use compound semiconductor single crystal substrates, which are expensive and require large area. It was difficult to

Even if Si single crystal is used as a substrate, the area of compound semiconductor crystal that can be grown is limited to about 6 inches in diameter at most, due to its mechanical strength and the difficulty of increasing the area of Si and Q1 crystals, which is practically impossible. I've only been able to get something much smaller than that.

The present invention eliminates such conventional drawbacks, provides a compound semiconductor heteroepitaxial device grown on a large area, and provides a method for stably manufacturing a compound heteroepitaxy device with simple operations. The purpose is to

[Means for Solving the Problems] In order to achieve these objects, the present invention provides a single crystal of a group IV element grown on an amorphous substrate and a compound semiconductor layer epitaxially grown on a silicon single crystal. It is characterized by consisting of.

Further, the present invention provides a single crystal of a group IV element by supplying an element constituting a compound semiconductor onto a growth substrate having a single crystal whose host is an atom belonging to group IV of the periodic table grown on an amorphous substrate. It is characterized by forming a compound semiconductor layer thereon.

Furthermore, in the present invention, a nucleation surface (5NOL) having a higher nucleation density than the substrate is formed on the amorphous substrate, and a nucleation surface (SND
L) A single crystal nucleus is formed using atoms belonging to group rv of the periodic table as a host, and the single crystal is spread over the nucleation surface to cover the non-nucleation surface (Ssos) with a low nucleation density of the amorphous substrate. and a step of supplying elements constituting the compound semiconductor onto the growth substrate to form a compound semiconductor layer on the single crystal of the group IV element. .

[For production]

The present invention utilizes the fact that the nuclear shape f&density (NO) of a crystal to be grown differs depending on the material of the surface on which the crystal is grown. For example, when depositing Si crystal, Si
O□ has a small nucleation density (NDs) and SiN has a large nucleation density (NDL). Mo, Sin 2 side and S
If a crystal formation treatment is performed on a substrate having an iN plane, Si crystals will deposit and grow only on SiN and will not grow on Sin due to the difference in nucleation density (8ND). The surface with a large nucleation density (ND-L) on which crystals accumulate and grow is called the nucleation surface (SNDL), and the surface with a small nucleation density (NDs) on which crystals do not grow is called the non-nucleation surface (non-nucleation surface).
It is called SNos). At this time, if the area of the nucleation surface (Sso, ) is made small enough to generate only a single nucleus, a single crystal will grow from that single nucleus, and this single crystal will grow from the nucleation surface. (SNOL) and the non-nucleation surface (SNo.
s) Grow upwards as well.

Since the present invention performs heteroepitaxial growth on the single crystal grown in this way, it is possible to perform heteroepitaxial growth over a large area without using a special large single crystal for the heteroepitaxial growth of compound semiconductors. and compound heteroepitaxial crystals with controlled sizes can be obtained.

[Example] The present invention will be described in detail below with reference to the drawings.

FIG. 1 shows an embodiment of the present invention in which Ga is deposited on a Si single crystal.
FIG. 3 is a process diagram showing a method for manufacturing a heteroepitaxial structure grown with As crystals.

First, a growth substrate shown in FIG. 1 (8) is prepared. The illustrated growth substrate 1 includes a base substrate 2 made of high melting point glass, quartz, alumina, ceramics, etc. It consists of a SiO2 film 3 provided on a base substrate 2 and a plurality of Sr single crystals 4. In the figure, 5 is a SiN film used to grow single crystal Si on 5in2. A method for manufacturing such a growth substrate 1 will be explained later.

Next, in order to prevent the generation of antiphase domains in the GaAs layer to be grown, the growth substrate 1 was changed to arsine (8S+
13) Heat treatment was performed at 950° C. for about 20 minutes in an atmosphere.

Then, the growth substrate temperature was set to 420°C, trimethyl gallium (TMG) and AsH were used as reaction gases, and M
Approximately 120 GaAs buffer layers 6 were deposited by the OCVD (organometallic chemical vapor deposition) method [Fig. 1 (B)
].

The ratio of TMG and As113 during film formation was approximately 1=10,
The reaction pressure was 80 Torr.

Next, the substrate temperature was raised to 680°C while other conditions remained the same, and the GaAs layer 7 was grown to a thickness of 6 μm [Figure 1 (C)]
.

In this way, it was possible to obtain a heteroepitaxial structure in which GaAs was grown on Si over a wide area.

Next, a method for manufacturing the growth substrate 1 will be explained with reference to FIG.

Approximately 2,000 SiO2 films 3 are deposited on a base substrate 2 made of high-melting-point glass, quartz, alumina, or ceramics that can withstand high temperatures by a known method such as sputtering [FIG. 2(A)]. The SiO□ film has a low Si nucleation density (ND) and serves as a non-nucleation surface (Ssos).

Next, using SiH4 gas and N113 gas, plasma C
A SiN film 58 is formed on the 5in2 film 2 by the vD method. The composition of SiN may deviate from the stoichiometric composition. This SiNx film is patterned by lithography as shown in FIG. 2(B).

SiNx has a high nucleation density and becomes a nucleation surface (SNDL). At this time, the size of the SiNx is made sufficiently fine to several μm or less so that only a single nucleus is formed.

Next, when the S1 crystal 4 is grown by a thermal CVD method using 5ill and Cf12 gas, the nucleation surface (SND
A Si single crystal grown from a single nucleus on SiNx (L) grows with its non-nucleation surface (SNos) covering the SiO2 surface as shown in FIG. 2(C).

Finally S i! By polishing the surface of the lj-crystal 4 to a flat surface, a growth substrate 1 as shown in FIG. 2(D) can be obtained.

Nucleation...The formation of 1 (SNI, L) does not butter the SiNx film, but locally forms Ga, L, etc. on the 5107 surface.
This can also be done by implanting As or other ions.

The 5il crystal may be formed not by thermal CVD but by other CVD methods, or by MBE (molecular beam epitaxy). Further, impurities for controlling the conductivity type may be doped using well-known techniques.

As a non-nucleation surface, 5102 deposited on the base substrate
In addition to the film, the 5102 substrate itself can also be used.

MOC as a GaAs heteroepitaxial growth method
Although the VD method is shown as an example, it goes without saying that the MIIE method and the LPE (liquid phase epitaxy) method can also be used.

S as a substrate single crystal for heteroepitaxial growth
Not only i but also Ge can be used.

Furthermore, the present invention uses GaP and InΔS as compound semiconductors.

III-V group compounds such as lsb and their mixed crystal compounds, CbSe, 11gTe and other II-
Group VI compounds in general and their mixed crystal compounds, Zarani C
Chalcopyrite type 1-III-V such as dCa52
It can also be applied to a heteroepitaxial structure using an i-group compound.

[Effects of the Invention] As explained above, according to the present invention, a heteroepitaxial film of group IV, III-V, and group II-VI can be obtained over a large area on an insulator, which is different from conventional III-V.

Compared to an It-VI group compound semiconductor 11-crystal substrate or a Si single-crystal substrate IL which is heteroepitaxially formed, a low-cost 4:49 substrate with high mechanical strength can be obtained.

In addition, switching circuits and amplifier circuits can be placed on Si rice crystals.
(2) A light-emitting element in which a light-emitting part and a control part are integrated can be formed with great care, and an electro-optical element with a large area and a low cost can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a process diagram explaining the present invention in detail, and FIG. 2 is a process diagram showing an example of manufacturing a growth substrate. DESCRIPTION OF SYMBOLS 1... Growth substrate, 2... Base substrate, 3... 5102 film, 4... Si single crystal, 5... Nucleation surface, 6... GaAs buffer layer, 7... GaAs epitaxial layer. Figure 1

Claims (1)

[Scope of Claims] 1) Consisting of a single crystal grown on an amorphous substrate and whose parent body is an atom belonging to Group IV of the periodic table, and a compound semiconductor layer epitaxially grown on the single crystal. A heteroepitaxial structure. 2) The heteroepitaxial structure according to claim 1, wherein the single crystal of the group IV element is a plurality of single crystals whose positions and sizes on the amorphous substrate are controlled. 3) The single crystal of the group IV element has a non-nucleation surface (S_N_D_
The nucleation surface (S) provided on the amorphous substrate is
_N_D_L) The heteroepitaxial structure according to claim 1 or 2, wherein the heteroepitaxial structure is selectively grown on _N_D_L. 4) The heteroepitaxial structure according to any one of claims 1 to 3, wherein the Group IV element is silicon. 5) The heteroepitaxial structure according to claim 4, wherein the compound is a III-V group compound. 6) The heteroepitaxial structure according to claim 4, wherein the compound is a II-VI group compound. 7) The heteroepitaxial structure according to claim 4, wherein the compound is a group I-III-VI compound. 8) Supplying an element constituting a compound semiconductor onto a growth substrate having a single crystal whose matrix is an atom belonging to Group IV of the periodic table grown on an amorphous substrate, and growing the single crystal of the Group IV element. 1. A method for forming a heteroepitaxial structure, comprising forming a compound semiconductor layer. 9) Form a nucleation surface (S_N_D_L) with a higher nucleation density than the substrate on an amorphous substrate, and form a nucleation surface (S_N_D_L) on the amorphous substrate.
_D_L) is formed with a single crystal nucleus whose parent body is an atom belonging to Group IV of the periodic table.
D_S) forming a compound semiconductor layer on the single crystal of the Group IV element by supplying an element constituting a compound semiconductor onto the growth substrate; A method for forming a heteroepitaxial structure, comprising: 10) The amorphous substrate is a SiO_2 substrate, and the I
10. The method for forming a heteroepitaxial structure according to claim 9, wherein the group V semiconductor is silicon. 11) The method for forming a heteroepitaxial structure according to claim 10, wherein the compound is a III-V group compound. 12) The method for forming a heteroepitaxial structure according to claim 10, wherein the compound is a II-VI group compound. 13) The method for forming a heteroepitaxial structure according to claim 10, wherein the compound is a group I-III-VI compound.