JPS63232337A - Dry cleaning - Google Patents
Dry cleaningInfo
- Publication number
- JPS63232337A JPS63232337A JP6378187A JP6378187A JPS63232337A JP S63232337 A JPS63232337 A JP S63232337A JP 6378187 A JP6378187 A JP 6378187A JP 6378187 A JP6378187 A JP 6378187A JP S63232337 A JPS63232337 A JP S63232337A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ozone
- hydrogen
- ion beam
- hydrogen ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005108 dry cleaning Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- -1 hydrogen ions Chemical class 0.000 claims abstract 3
- 238000004140 cleaning Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 238000010884 ion-beam technique Methods 0.000 abstract description 9
- 239000007789 gas Substances 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000002829 reductive effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 101000635799 Homo sapiens Run domain Beclin-1-interacting and cysteine-rich domain-containing protein Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 102100030852 Run domain Beclin-1-interacting and cysteine-rich domain-containing protein Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000212342 Sium Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- VNONINPVFQTJOC-ZGXDEBHDSA-N dioscin Chemical compound O([C@@H]1[C@@H](CO)O[C@H]([C@@H]([C@H]1O)O[C@H]1[C@@H]([C@H](O)[C@@H](O)[C@H](C)O1)O)O[C@@H]1CC2=CC[C@H]3[C@@H]4C[C@H]5[C@@H]([C@]4(CC[C@@H]3[C@@]2(C)CC1)C)[C@@H]([C@]1(OC[C@H](C)CC1)O5)C)[C@@H]1O[C@@H](C)[C@H](O)[C@@H](O)[C@H]1O VNONINPVFQTJOC-ZGXDEBHDSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はドライクリー二／グ方法に係υ、特に半導体基
板表面の清浄化に好適なドライクリーニング方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dry cleaning method, and particularly to a dry cleaning method suitable for cleaning the surface of a semiconductor substrate.
従来、Ｓ工を生たる材料とする半導体製造工程では、半
導体基板の表面に所望の絶砿膜、半導体おるいは導体を
形成する手段として化学的気相成長法やスパッタ法など
が一般的に用いられてきた。Conventionally, in the semiconductor manufacturing process using S as a material, chemical vapor deposition, sputtering, etc. have been commonly used as a means of forming a desired amorphous film, semiconductor, or conductor on the surface of a semiconductor substrate. has been used.
それらの方法による膜形成は、専用の装Ｒを用いて行な
われる。−万、膜形成を行なう前に基板の表面を清浄化
する目的でエツチング洗浄が行なわれる。エツチング洗
浄は、７ツ化水素酸や７ツ化アンモニウムなどを含んだ
溶液に基板を浸漬することによって行なわれる。さらに
詳しく言えば。Film formation by these methods is performed using a dedicated equipment R. - Before film formation, etching cleaning is performed to clean the surface of the substrate. Etching cleaning is performed by immersing the substrate in a solution containing hydroseptatonic acid, ammonium heptadide, or the like. To be more specific.
前記浴液中で基板表面の極めて薄い５ｊ０２膜をエツチ
ング除去した後、水中に浸漬し、基板に付着しているエ
ツチング溶液を洗い流した後、基板を乾燥する手順１に
経て前記薄膜形成用の専用装置まで搬送される。After etching and removing the extremely thin 5J02 film on the surface of the substrate in the bath solution, the substrate is immersed in water, the etching solution adhering to the substrate is washed away, and the substrate is dried. Transported to the device.
以上の説明は、表面の清浄化を目的とした湿式の処理方
法に関するものでおるが、８ｉ０ｚｋエツチングする方
法に関してはドライエツチング法も広く用いられており
、これに関しては特公昭、昭５７−４１８１７号などに
詳細が述べられている。The above explanation relates to a wet processing method for the purpose of cleaning the surface, but a dry etching method is also widely used for 8i0zk etching, and this is described in Japanese Patent Publication No. 57-41817. Details are given in.
上記便米の技術には以下の問題がおった。まず湿式エツ
チング法による前洗浄に関して言えは。The above-mentioned delivery rice technology had the following problems. First, regarding pre-cleaning using the wet etching method.
ガえばＳｉ単精晶や多結晶Ｓｉの表面に形成される自然
成長的５１０２膜を完全に除去できない。すなわち、Ｓ
ｉ表面の自然成長的５ｉＯｚ＠’にエツチング溶液中で
エツチングし、清浄なＳｉ表面を露出嘔せても、その後
に行なう水中洗浄や乾燥の段階、さらに前記博膜形成鉄
直に１板を挿入する段階で３１表面には再びＳｊＯｚｍ
が自然成長の形で形成されてしまう。その膜厚は、高濃
度に不純物を含有したＳｉの表面では２０〜２５人、著
しい場合には５０人にも達してしまう。Otherwise, the naturally grown 5102 film formed on the surface of single crystal Si or polycrystalline Si cannot be completely removed. That is, S
Even if the naturally grown 5iOz@' surface is etched in an etching solution and the clean Si surface is exposed, the subsequent steps of underwater washing and drying, and the insertion of a plate into the film forming iron. At this stage, SjOzm is added to the 31 surface again.
is formed by natural growth. The film thickness is 20 to 25 layers on the surface of Si containing a high concentration of impurities, and in extreme cases, it can reach as much as 50 layers.
一方、ドライエツチング法に関して言えは、エツチング
ガスに含まれる炭素が、Ｓｉ表面に残存して汚染の原因
になること、湿式法に比べて８ｊＯｔとＳｉのエツチン
グ速度の選択性が低いため数１０人オーダーの；３ ｊ
（Ｊ ｚ膜だけを制御性良く除去するのが極めて困難
でおることなどの問題がろる。On the other hand, regarding the dry etching method, the carbon contained in the etching gas remains on the Si surface and causes contamination, and the selectivity of the etching rate between 8jOt and Si is lower than that of the wet method, so it requires several tens of people. of order ;3 j
(There are problems such as the fact that it is extremely difficult to remove just the Jz film with good control.
本発明の目的は％Ｓｉ衆面表面成されている極めて薄い
５ｊＯｓ［を除去して表面を清浄化する方法を提供する
Ｏとにある。An object of the present invention is to provide a method for cleaning the surface by removing the extremely thin 5jOs formed on the surface of a Si substrate.
上記目的は、Ｓｉ衆面金活性な酸素あるいはオゾンに曝
露した後、加熱状態にしてＳｉ表面に水素イオンビーム
を照射することにより達成される。The above object is achieved by exposing the Si surface to active oxygen or ozone, heating it, and irradiating the Si surface with a hydrogen ion beam.
不発明：＠は１表面の清浄化を図る目的で、自然成長的
８ｉＬｈが形成されているＳｉ表面に種々の処理を施す
検討を行なった結果、ひとつの真空容器内で上記地理を
連続的に行なうことによって炭素や［素を含まない３ｉ
の表面を得らｎることがわかった。Uninvented: 1. In order to clean the surface, we investigated applying various treatments to the Si surface on which naturally grown 8iLh was formed. By doing this, 3i that does not contain carbon or [element]
It was found that the surface of
最初の段階で行なう活性＃Ｌ＃、あるいはオゾンによる
Ｓｉ表面の処理によって、Ｓｉ表面に吸着している炭′
ｌＡ（ハイドロカーボン）は酸化され、気体となって脱
離し、Ｓｉ表面には純粋な５ｉ（Ｊｚｆｅけが残存する
。続いて水素イオンビームを照射すると、５ｔＣ）２の
形で存在する酸素は水素による還元反応によって脱離し
、その結果、表面に形成さｎていた自然酸化膜などは除
去されて・８１たけの純粋な表面を出現させることがで
きる。By treating the Si surface with activation #L# or ozone in the first step, the carbon adsorbed on the Si surface
1A (hydrocarbon) is oxidized and desorbed as a gas, leaving pure 5i (Jzfe scratches) on the Si surface. Subsequently, when irradiated with a hydrogen ion beam, the oxygen present in the form of 5tC)2 is oxidized by hydrogen. It is desorbed by a reduction reaction, and as a result, the natural oxide film formed on the surface is removed, leaving a pure surface.
以下、本発明の一実施例を第１図、第２図、第３図によ
り説明する。An embodiment of the present invention will be described below with reference to FIGS. 1, 2, and 3.
１ず１本実施例で用いた装置の構成について説明する。1. The configuration of the apparatus used in this example will be explained one by one.
ターボボングｌ′Ｊ？工び油回転ポンプ２から成る冥臣
排気系と、オージェ電子分光分析器１０と、イオン源４
とを備えた真空容器３内に。Turbo bong l'J? An exhaust system consisting of a rotary oil pump 2, an Auger electron spectrometer 10, and an ion source 4
In a vacuum container 3 equipped with.
タンタルを材料とする試料台５に載置し九試料（シリコ
ン基板）６ｔ−設置した。試料６には、その表面に厚さ
３０人の自然酸化膜が成長している単結晶８１を用いた
。試料台５の直下ごく近傍に試料台加熱用のハロゲンラ
ンプ８を、また上方のごく近傍にオゾン発生用のハロゲ
ンランプ９を設置した。試料台５は試料台移動機構７に
連結し。Nine samples (silicon substrates) 6t were placed on a sample stage 5 made of tantalum. Sample 6 used was a single crystal 81 on whose surface a natural oxide film had grown to a thickness of 30 mm. A halogen lamp 8 for heating the sample stand was placed directly below and in the vicinity of the sample stand 5, and a halogen lamp 9 for ozone generation was installed in the vicinity above. The sample stage 5 is connected to a sample stage moving mechanism 7.
真空容器内で任意に方向を変換できるようにした。The direction can be changed arbitrarily within the vacuum container.
試料台５の近傍にオージェ電子分光分析器を備え付け、
試料６の表面状態を真空容器内で観測できるようにした
。ガスは、リークパルプ１１を通してカス導入管１２か
ら尋人した。An Auger electron spectrometer is installed near the sample stage 5,
The surface condition of sample 6 could be observed inside the vacuum container. Gas was introduced from the waste introduction pipe 12 through the leak pulp 11.
以上、説明した装置構成のもとて本発明の主旨に関する
表面処理方法について述べる。The surface treatment method related to the gist of the present invention will be described based on the apparatus configuration described above.
リークパルプ１１を制御して真空容器内３の圧力が１０
０ ’ｌ”ｏｒｒになるようにガス導入管１２からば素
を供給した。七の状態でノ・ロケンランプ９に通電して
高温状態とじ、熱励起によジオシンを発生させた。ハロ
ゲンランプに通電した仮の試料６の表面状態を１分経過
するごとにオージェ分析器１０によシ計測した。第２図
は、オージェ電子分光法で得られるエネルギー強度が９
２ｅＶの８１゜２７２６Ｖの炭素、お工び５０３ｅｖの
酸素に注目してオゾン曝露後の一過時間の推移に伴う谷
元素の変化の様子金示しｆｃものでおる。約５分後には
炭素のスペクトルビークは消滅し、Ｓｉと酸素のピーク
だけが残存した。すなわち、表面に存在していた炭素に
オゾンとの反応にＪ脱離除去されたことを示していた。The pressure inside the vacuum container 3 is 10 by controlling the leak pulp 11.
Baron was supplied from the gas inlet pipe 12 so that the amount was 0'l"orr. In the state shown in step 7, the halogen lamp 9 was energized to maintain a high temperature state, and dioscine was generated by thermal excitation. The halogen lamp was energized. The surface condition of the sample 6 was measured every minute using the Auger analyzer 10. Figure 2 shows that the energy intensity obtained by Auger electron spectroscopy is 9.
Focusing on carbon at 81°2726V at 2 eV and oxygen at 503 eV, we show the changes in valley elements with the transition time after exposure to ozone. After about 5 minutes, the carbon spectral peak disappeared and only the Si and oxygen peaks remained. That is, it was shown that the carbon present on the surface was removed by J desorption due to the reaction with ozone.
次に、ｒＲ索の供給を停止し真空容器３内を一旦２ Ｘ
１０−７Ｔｏｒｒｊで排気した後。Next, the supply of the rR rope is stopped and the inside of the vacuum vessel 3 is temporarily
After exhausting at 10-7 Torrj.
水素を供給してリークパルプ１１を用いて真空容器内の
圧力が５ Ｘ １０”” Ｔｏｒｒ Ｖｃなる工うに制
御した。それと同時に試料台加熱源用のハロゲンランプ
８を用いて試料６を５ｏｏｃまで昇温させた。Hydrogen was supplied and the pressure inside the vacuum vessel was controlled to 5 x 10" Torr Vc using a leak pulp 11. At the same time, the temperature of the sample 6 was raised to 5 ooc using the halogen lamp 8 for the sample stage heating source.
次いでイオン源４を起動し、水素のイオンビームを試料
６の表面に照射し丸。イオンの加速電圧は１ｋＶとした
。第３図に、第２図と同様に９２ｅＶＯ８ｉを示すスペ
クトルおよび５０３ｅＶの酸素を示すスペクトルに注目
したオージェ電子分光法で得られる表面状態の変化を示
した。横軸は水素イオンビーム照射後のれ適時間を示し
ている。水素イオンビームを照射してから約１９分後に
は酸素を示すスペクトルは消滅し、Ｓｉを示すスペクト
ルだけが残存した。この結果は、水素イオンビームの照
射によ、り５ｉＯｚが還元され、 ＯＨ−？Ｈｚ （Ｊ
の形で酸素が表面から脱離し九ことを示している。Next, the ion source 4 is activated, and the surface of the sample 6 is irradiated with a hydrogen ion beam. The ion acceleration voltage was 1 kV. FIG. 3 shows changes in the surface state obtained by Auger electron spectroscopy focusing on the spectrum showing 92 eVO8i and the spectrum showing oxygen at 503 eV, as in FIG. 2. The horizontal axis indicates the appropriate delay time after hydrogen ion beam irradiation. Approximately 19 minutes after irradiation with the hydrogen ion beam, the spectrum indicating oxygen disappeared, and only the spectrum indicating Si remained. This result shows that 5iOz is reduced by hydrogen ion beam irradiation, and OH-? Hz (J
This shows that oxygen is desorbed from the surface in the form of 9.
本実施例におけるオゾン曝露の条件は、圧力１００Ｔｏ
ｒｒ、 試料６は至温とし友が、圧力はｌ’ｌ’ｏｒ
ｒがら大気圧まで、また温度は２ｏｏｃ以下の範囲で有
効でろり、一方水素イオンビームの照射条件は５ Ｘ
１０−’Ｔｏｒｒテ５００ Ｃ（Ｄ温度き用イ友カ、圧
力は５Ｘ１０””’ρλらｌ Ｘ １０−’Ｔｏｒｒ
、 １ｆｃｍＫＦ１４００Ｃ以上の範囲で有効であった
。The conditions for ozone exposure in this example were a pressure of 100To
rr, sample 6 is at the lowest temperature, the pressure is l'l'or
The hydrogen ion beam irradiation conditions are 5X.
10-'Torr 500 C
, was effective in the range of 1 fcmKF1400C or higher.
以上説明した９口く１本実施例によれはひとつのＩｃ
２ ′＃器内でオゾン照射と水素イオンの照射を連続的
に行なうことによって炭素を含む自然成長ＳｉＵｍを除
去することを可能とし純粋な８１衆面全露出できる効果
がるる。なお１本実施例ではＳ！基基板圃面用いたが、
多結晶ｓｉや金属シリサイドあるいは金属るるいはＩｎ
−ＰやＱａ−Ａｓなどの化会物半導体基板の表面に対し
ても同様の効果を得ることができる。According to the above-described nine ports and one embodiment, one Ic is used.
By continuously performing ozone irradiation and hydrogen ion irradiation in the 2'# chamber, it is possible to remove the naturally grown SiUm containing carbon, resulting in the effect that the pure 81-silicon surface can be completely exposed. In addition, in this example, S! Although the base substrate field was used,
Polycrystalline Si, metal silicide, metal silicide, or In
A similar effect can be obtained on the surface of a compound semiconductor substrate such as -P or Qa-As.
本発明によれば、従来の湿式エツチング法やドライエツ
チング法では央現し得なかった。極めて薄い酸化物層の
みを除去して清＃な基板の表面を露出させることができ
るので、その表面に薄膜を形成しても５ｊＯｚを介在さ
せない極めて清浄な基板と薄膜の界面を得ることができ
る。従って半導体製造工程でしばしば発生する導体める
いは半導体層間の接触抵抗の増大の問題や界面に存在す
るＳ １０ ｘが不純物拡散の障害となる問題、あるい
は単結晶の成長に対する障害となる問題を回避するのに
大きな効果かめる。According to the present invention, this could not be achieved using conventional wet etching methods or dry etching methods. Since only the extremely thin oxide layer can be removed to expose the clean surface of the substrate, even if a thin film is formed on the surface, an extremely clean interface between the substrate and the thin film can be obtained without 5jOz intervening. . Therefore, it avoids the problem of increased contact resistance between conductors or semiconductor layers that often occurs in semiconductor manufacturing processes, the problem of S 10 x present at the interface becoming an obstacle to impurity diffusion, or the problem of becoming an obstacle to single crystal growth. It can be very effective to do so.
Claims (1)
板の表面を清浄化する方法において、基板に水素イオン
を照射して上記基板の表面を清浄化することを特徴とす
るドライクリーニング方法。 ２、基板に水素イオンを照射する前にオゾンによつて上
記基板の表面を前処理することを特徴とする特許請求の
範囲第１項記載のドライクリーニング方法。 ３、上記清浄化は、炭素の吸着層を含む厚さ５０Å以下
の基板表面の酸化物を除去することによつて達成される
ことを特徴とする特許請求の範囲第１項もしくは第２項
記載のドライクリーニング方法。[Claims] 1. A method for cleaning the surface of a substrate using radicals or ions in an atmosphere below atmospheric pressure, characterized by cleaning the surface of the substrate by irradiating the substrate with hydrogen ions. Dry cleaning method. 2. The dry cleaning method according to claim 1, wherein the surface of the substrate is pretreated with ozone before irradiating the substrate with hydrogen ions. 3. The above-mentioned cleaning is achieved by removing oxides on the surface of the substrate having a thickness of 50 Å or less including a carbon adsorption layer, as set forth in claim 1 or 2. dry cleaning method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6378187A JPS63232337A (en) | 1987-03-20 | 1987-03-20 | Dry cleaning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6378187A JPS63232337A (en) | 1987-03-20 | 1987-03-20 | Dry cleaning |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63232337A true JPS63232337A (en) | 1988-09-28 |
Family
ID=13239265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6378187A Pending JPS63232337A (en) | 1987-03-20 | 1987-03-20 | Dry cleaning |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63232337A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5637512A (en) * | 1990-11-16 | 1997-06-10 | Seiko Epson Corporation | Method for fabricating a thin film semiconductor device |
-
1987
- 1987-03-20 JP JP6378187A patent/JPS63232337A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5637512A (en) * | 1990-11-16 | 1997-06-10 | Seiko Epson Corporation | Method for fabricating a thin film semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3086719B2 (en) | Surface treatment method | |
| US5174881A (en) | Apparatus for forming a thin film on surface of semiconductor substrate | |
| KR100391840B1 (en) | Method and apparatus for forming an insulating film on the surface of a semiconductor substrate | |
| JPH0228322A (en) | Preliminary treatment of semiconductor substrate | |
| EP0605785A2 (en) | Cleaning agents for removing metal-containing contaminants from integrated circuit assemblies and process for using the same | |
| Kaneko et al. | Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)–in situ UVOC | |
| JPH0496226A (en) | Manufacture of semiconductor device | |
| JPH0964307A (en) | Heat treatment method of oxide thin film | |
| JPH03116727A (en) | Manufacture of semiconductor device | |
| JPS63232337A (en) | Dry cleaning | |
| JPH071766B2 (en) | Method for manufacturing semiconductor device | |
| JP2558273B2 (en) | Surface cleaning method | |
| JP4370593B2 (en) | Surface modification method | |
| JPH0492423A (en) | Manufacture of semiconductor integrated circuit device | |
| JP3439580B2 (en) | Method and apparatus for forming silicon oxide film | |
| JP3212442B2 (en) | How to reduce the amount of hydrogen adsorbed on diamond surface | |
| JP2694625B2 (en) | Method for etching compound semiconductor substrate and method for manufacturing the same | |
| JPH03204932A (en) | Removal of coating film on silicon layer and selective removal of silicon natural oxide film | |
| JPH0294631A (en) | Formation of thin film and apparatus therefor | |
| JPH033328A (en) | Modification of surface of solid sample | |
| US20020009899A1 (en) | Method and device for manufacturing semiconductor devices including insulation oxide layers | |
| JPS59162200A (en) | Cleaning of surface of silicon substrate | |
| JPH04290219A (en) | Method of forming polycrystalline silicon film | |
| JPS6345822A (en) | Method and apparatus for cleaning | |
| JPS63160324A (en) | Molecular beam epitaxial crystal growth |