JPS63231950A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS63231950A JPS63231950A JP6413287A JP6413287A JPS63231950A JP S63231950 A JPS63231950 A JP S63231950A JP 6413287 A JP6413287 A JP 6413287A JP 6413287 A JP6413287 A JP 6413287A JP S63231950 A JPS63231950 A JP S63231950A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thermal head
- silicide
- high temperature
- longer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 17
- 229910021332 silicide Inorganic materials 0.000 abstract description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 11
- 238000007639 printing Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 230000020169 heat generation Effects 0.000 abstract description 5
- 239000012528 membrane Substances 0.000 abstract 3
- 230000016615 flocculation Effects 0.000 abstract 2
- 238000005189 flocculation Methods 0.000 abstract 2
- 229910008814 WSi2 Inorganic materials 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 229910004217 TaSi2 Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/345—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
シリサイド高比抵抗材料の発熱抵抗膜を用いたサーマル
ヘッドにおいて、発生する異常高温部の異常点の長さを
長くして異常高温部の集中を避けるようにマイナス電極
の端部をプラス電極よりも長くする（例えば、印字用紙
供給方向に対して斜めにする）。[Detailed Description of the Invention] [Summary] In a thermal head using a heating resistive film made of a silicide high resistivity material, the length of the abnormal point of the abnormally high temperature part that occurs is lengthened to avoid concentration of the abnormally high temperature part. Make the end of the negative electrode longer than the positive electrode (for example, make it oblique to the printing paper supply direction).
本発明はサーマルプリンタに用いられるサーマルヘッド
に関するものである。The present invention relates to a thermal head used in a thermal printer.
サーマルプリンタは高速、低騒音、低価格、メンテナス
フリーなど多くの特長を持ち、その構成が単純で軽量・
小型化が実現し易く、広範に利用されている。Thermal printers have many features such as high speed, low noise, low cost, and maintenance-free construction.
It is easy to miniaturize and is widely used.
サーマルヘッドの構成単位は第５図および第６図に示す
ようなもので、セラミック基板２１の上に発熱抵抗膜２
２を全面に形成し、その上に電極Ｎ（プラス電極２３お
よびマイナス電極２４）を、例えば、ニクロム−金−ニ
クロムで形成する。そして、全面に保護ＪｆＷ２５（例
えば、Ｔａ２０５膜〉を形成して ひとつのドツトの発
熱素子となり、これらが多数形成されている。特に、第
６図は保護膜のない状態にしてサーマルヘッド（発熱素
子）を平面図的に示しており、プラス電極２３およびマ
イナス電極２４の端部は印字用紙供給方向に対して直角
になっている。これら電極２３ 、２４に直流電源から
の電流を流すことによって抵抗膜２２が発熱し、高温領
域２６が形成され、この熱がその上の保護膜２５を局部
的に加熱して、この加熱されたところに感熱紙、熱転写
インクシート（そして被転写紙）などの印字用紙がプラ
テン（図示せず）によって押付けられるようになってい
る。感熱紙では熱によって発色して、一方、熱転写方式
ではインクが熱で溶解して用紙に転写されて点（ドツト
）として印字される。The structural unit of the thermal head is as shown in FIGS. 5 and 6, in which a heating resistive film 2 is placed on a ceramic substrate 21.
2 is formed on the entire surface, and electrodes N (plus electrode 23 and minus electrode 24) are formed thereon using, for example, nichrome-gold-nichrome. Then, a protective JfW25 (for example, Ta205 film) is formed on the entire surface to form a single dot heating element, and many of these are formed.In particular, Figure 6 shows a thermal head (heating element) with no protective film. ) is shown in plan view, and the ends of the positive electrode 23 and negative electrode 24 are perpendicular to the printing paper supply direction.By flowing current from a DC power source through these electrodes 23 and 24, a resistance is created. The film 22 generates heat, forming a high temperature region 26, and this heat locally heats the protective film 25 thereon, and the heated area is coated with thermal paper, thermal transfer ink sheet (and transfer paper), etc. The printing paper is pressed against the printing paper by a platen (not shown).With thermal paper, the color develops due to heat, while with the thermal transfer method, the ink is melted by heat and transferred to the paper, printing as dots. be done.
発熱抵抗膜２２の材料は窒化タンタル（Ｔａｚ Ｎｓ
）が使用されていたが、ドツトの高密度化および印加電
圧の１２Ｖから２４Ｖへの対応などのことから、もっと
高比抵抗材料である耐熱性シリサイド（ＷＳｉ２ 、
ＭｏＳｉ２ 、 ＴａＳｉ２ ｐ ＴｉＳｉ２など）が
採用されるようになってきた。The material of the heating resistive film 22 is tantalum nitride (Taz Ns).
) was used, but heat-resistant silicide (WSi2, WSi2,
(MoSi2, TaSi2 p, TiSi2, etc.) have come to be adopted.
シリサイドの高比抵抗材料を発熱抵抗膜に用いると、高
温領域２６のマイナス電極２４側の端領域２７にシリコ
ン（Ｓｉ）が凝集して異常点となり、より高温の異常高
温領域となる。これは、シリサイド膜を通常スパッタリ
ング法で形成するためにシリサイド結合が不十分なシリ
コンが存在して、加熱使用しているうちに高温と電界の
影響で同相拡散的にシリコン凝集が生じるからである。When a high resistivity material such as silicide is used for the heating resistive film, silicon (Si) aggregates in the end region 27 of the high temperature region 26 on the negative electrode 24 side and becomes an abnormal point, resulting in an abnormally high temperature region with a higher temperature. This is because silicide films are usually formed by sputtering, so there is silicon with insufficient silicide bonds, and during heating, silicon agglomerates due to in-phase diffusion due to the effects of high temperature and electric field. .
この異常点２７では発熱が高温領域２６よりも大きいた
めに、その上の保護膜２５が蒸発することになって穴（
クラック）が生じ、そこから酸素の侵入があってシリサ
イド抵抗膜が酸化されて、ついには、断線に至ることが
ある。Since the heat generation at this abnormal point 27 is greater than that at the high temperature area 26, the protective film 25 above it evaporates and the hole (
Cracks) occur, through which oxygen enters and oxidizes the silicide resistive film, which may eventually lead to disconnection.
本発明の目的は、シリサイド発熱抵抗膜の使用中に生じ
る異常点における異常高温を抑制してサーマルヘッド（
発熱素子）の寿命を確保することである。An object of the present invention is to suppress abnormal high temperatures at abnormal points that occur during use of a silicide heating resistive film, and to
The goal is to ensure the longevity of the heating element.
Ｃ問題点を解決するための手段〕
上述の目的が、基体上に形成された発熱抵抗膜と、該発
熱抵抗膜に接続されたプラス電極およびマイナス電極と
、全体を覆う保護膜とからなるサーマルヘッドにおいて
、発熱抵抗膜をシリサイド高比抵抗材料で構成しかつ該
発熱抵抗膜に接触したマイナス電極の端部がプラス電極
の端部よりも長いことを特徴とするサーマルヘッドによ
って達成される。Means for Solving Problem C] The above-mentioned purpose is to provide a thermal system consisting of a heat-generating resistive film formed on a base, a positive electrode and a negative electrode connected to the heat-generating resistive film, and a protective film covering the entire body. This is achieved by a thermal head in which the heating resistive film is made of a silicide high resistivity material and the end of the negative electrode in contact with the heating resistive film is longer than the end of the positive electrode.
マイナス電極の端部が印字用紙方向に対して斜めである
ことによって異常点を直角の場合よりも長くすることは
好ましい。It is preferable that the end of the negative electrode be oblique with respect to the printing paper direction so that the abnormal point is longer than if it were at right angles.
以下、添付図面を参照して本発明の実施態様例によって
本発明の詳細な説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail by way of embodiments with reference to the accompanying drawings.
本発明に係るサーマルヘッドは、その断面については先
に説明した第５図と同じであるように、基板２１、シリ
サイド（ＷＳｉｚ ）発熱抵抗膜２２、プラス電極２３
、マイナス電極２４および保護膜２５からなる。The thermal head according to the present invention has a substrate 21, a silicide (WSiz) heating resistive film 22, and a positive electrode 23, as its cross section is the same as that shown in FIG.
, a negative electrode 24 and a protective film 25.
本発明にしたがって、マイナス電極２４Ａ〜２４Ｄの端
部をプラス電極２３Ａ〜２３Ｄの端部より長くするよう
に形成した状態を第１図〜第４図の電極配置図に示す。The electrode layout diagrams of FIGS. 1 to 4 show the state in which the ends of the negative electrodes 24A to 24D are longer than the ends of the positive electrodes 23A to 23D according to the present invention.
第１図の場合には、マイナス電極２４Ａの端部を印字用
紙供給方向に対して斜めに形成して、高温領域２６Ａ内
でシリコン凝集の異常点２７Ａもマイナス電極端部に沿
って斜めとなる。このようにして第６図の従来の場合（
プラスおよびマイナス電極が用紙供給方向に対して直角
である場合）よりも異常点が長くなる。In the case of FIG. 1, the end of the negative electrode 24A is formed obliquely with respect to the printing paper supply direction, so that the abnormal point 27A of silicon aggregation within the high temperature region 26A is also oblique along the end of the negative electrode. . In this way, the conventional case shown in Fig. 6 (
The abnormal point is longer than when the positive and negative electrodes are perpendicular to the paper feeding direction).
第２図の場合には、マイナス電極２４Ｂの端部をＶ字状
にして、高温領域２６Ｂ内異常点２７ＢもＶ字状にする
ことによって長くしている。In the case of FIG. 2, the end of the negative electrode 24B is made into a V-shape, and the abnormal point 27B within the high temperature region 26B is also made into a V-shape to make it longer.
第３図の場合には、マイナス電極２４Ｃの幅をプラス電
極２３Ｃよりも大きくして、高温領域２６Ｃ内異常点２
７Ｃを幅増加分だけ長くしている。電極幅を大きくする
ことはドツトの高密度化を妨げる要因となりうるので、
電極幅をかなり大きくすることはしない。In the case of FIG. 3, the width of the negative electrode 24C is made larger than the positive electrode 23C, and the abnormal point 2 in the high temperature area 26C is
7C is lengthened by the width increase. Increasing the electrode width may hinder the dot density, so
Do not make the electrode width too large.
第４図の場合は、第２図と第３図の場合を組合せており
、マイナス電極幅増大とＶ字状形成とで高？ＦＡ領域２
６Ｄ内異常点２１Ｄを第１図〜第３図の場合よりもさら
に長くすることができる。The case shown in Fig. 4 is a combination of the cases shown in Figs. 2 and 3, and the width of the negative electrode is increased and the V-shape is formed. FA area 2
The abnormal point 21D within 6D can be made longer than in the case of FIGS. 1 to 3.
−Ｆ述したように異常点での異常高温領域を従来よりも
長くすることで集中発熱を緩和できるので発熱最高温度
を、例えば、７００℃から６００〜６５０℃に下げるこ
とになる。-F As mentioned above, by making the abnormally high temperature region at the abnormal point longer than before, concentrated heat generation can be alleviated, so the maximum temperature of heat generation can be lowered from, for example, 700°C to 600-650°C.
本発明によれば、シリサイド高比抵抗材料の発熱抵抗膜
での使用中に生じるシリコン凝集による異常発熱の最高
温度を、マイナス電極端部形状を変えることで下げるこ
とができ、従来よりも保護膜の損傷が小さくてサーマル
ヘッド（発熱素子）の寿命が伸びる。According to the present invention, the maximum temperature of abnormal heat generation due to silicon aggregation that occurs during use of a silicide high resistivity material in a heat generating resistive film can be lowered by changing the shape of the negative electrode end, and the protective film can be lowered than before. The life of the thermal head (heating element) is extended due to less damage.
第１図〜第４図は、本発明に係るサーマルヘッドの電極
配置を説明する概略平面図であり、第５図は、サーマル
ヘッドの概略断面図であり、第６図は、従来のサーマル
ヘッドの電極配置を説明する概略平面図である。
２１・・・・・・・・・・・・基板、
２２・・・・・・・・・・・・発熱抵抗膜、２３Ａ〜２
３Ｄ・・・プラス電極、
２４Ａ〜２４Ｄ・・・マイナス電極、
２６Ａ〜２６Ｄ・・・高温領域、
２７Ａ〜２７Ｄ・・・異常点。1 to 4 are schematic plan views illustrating the electrode arrangement of the thermal head according to the present invention, FIG. 5 is a schematic cross-sectional view of the thermal head, and FIG. 6 is a conventional thermal head. FIG. 3 is a schematic plan view illustrating the electrode arrangement of FIG. 21......Substrate, 22...Heating resistance film, 23A~2
3D...plus electrode, 24A-24D...minus electrode, 26A-26D...high temperature region, 27A-27D...abnormal point.
Claims (1)
接続されたプラス電極およびマイナス電極と、全体を覆
う保護膜とからなるサーマルヘッドにおいて、前記発熱
抵抗膜（２２）をシリサイド高比抵抗材料で構成しかつ
該発熱抵抗膜（２２）に接触した前記マイナス電極（２
４Ａ〜２４Ｄ）の端部が前記プラス電極（２３Ａ〜２３
Ｄ）の端部よりも長いことを特徴とするサーマルヘッド
。1. In a thermal head consisting of a heat-generating resistive film formed on a substrate, a positive electrode and a negative electrode connected to the heat-generating resistive film, and a protective film covering the whole, the heat-generating resistive film (22) is silicided to a high The negative electrode (2) is made of a resistivity material and is in contact with the heating resistance film (22).
The ends of the positive electrodes (23A to 23D)
A thermal head characterized by being longer than the end of D).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6413287A JPS63231950A (en) | 1987-03-20 | 1987-03-20 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6413287A JPS63231950A (en) | 1987-03-20 | 1987-03-20 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63231950A true JPS63231950A (en) | 1988-09-28 |
Family
ID=13249243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6413287A Pending JPS63231950A (en) | 1987-03-20 | 1987-03-20 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63231950A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0281645A (en) * | 1988-09-19 | 1990-03-22 | Toshiba Corp | Thermal recording head |
| JP2011161640A (en) * | 2010-02-04 | 2011-08-25 | Toshiba Hokuto Electronics Corp | Thermal print head and thermal printer |
-
1987
- 1987-03-20 JP JP6413287A patent/JPS63231950A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0281645A (en) * | 1988-09-19 | 1990-03-22 | Toshiba Corp | Thermal recording head |
| JP2011161640A (en) * | 2010-02-04 | 2011-08-25 | Toshiba Hokuto Electronics Corp | Thermal print head and thermal printer |
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