JPS63221840A - Manufacture of amorphous hydrogenated carbon membranes - Google Patents

Manufacture of amorphous hydrogenated carbon membranes

Info

Publication number
JPS63221840A
JPS63221840A JP5551787A JP5551787A JPS63221840A JP S63221840 A JPS63221840 A JP S63221840A JP 5551787 A JP5551787 A JP 5551787A JP 5551787 A JP5551787 A JP 5551787A JP S63221840 A JPS63221840 A JP S63221840A
Authority
JP
Japan
Prior art keywords
film
low
hydrogenated carbon
amorphous hydrogenated
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5551787A
Other languages
Japanese (ja)
Inventor
Mochikiyo Osawa
大澤 以清
Shuji Iino
修司 飯野
Hideo Yasutomi
英雄 保富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP5551787A priority Critical patent/JPS63221840A/en
Publication of JPS63221840A publication Critical patent/JPS63221840A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D69/00Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/12Composite membranes; Ultra-thin membranes
    • B01D69/125In situ manufacturing by polymerisation, polycondensation, cross-linking or chemical reaction
    • B01D69/127In situ manufacturing by polymerisation, polycondensation, cross-linking or chemical reaction using electrical discharge or plasma-polymerisation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/07Polymeric photoconductive materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Polymerisation Methods In General (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable formation of high-performance membranes at low temperatures near a room temperature level and at high speed by polymerizing specific hydrocarbon organic compounds using a low-frequency plasma discharge decomposition method under vacuum. CONSTITUTION:In the first-fifth tanks 6-10 of a capacitor coupling-type plasma CVD as a membrane manufacturing device, hydrocarbon organic compounds such as butadiene having an adiabatic first ionization potential of 8.5-10eV and carrier gases such as H2, He and Ar are hermetically sealed with other additive compounds such as halogen atoms. A reaction chamber 23 is kept under a constant vacuum condition and an electric power of 30-1kw at low frequency of 10-1,000kHz is applied to an electrode plate 22 from a low-frequency power source 26 to generate a plasma discharge between both electrodes 22, 25. Subsequently, amorphous hydrogenated carbon membranes of a desired thickness are formed on a preheated substrate 24 while compound vapors are properly supplied from the tanks.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は成膜が常温近傍で可能であり、かつ成膜速度が
速い、非晶質水素化炭素膜の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing an amorphous hydrogenated carbon film that can be formed at around room temperature and at a high film formation rate.

従来技術および問題点 有機プラズマ重合膜はエチレンガス、ベンゼン、芳香族
シラン等のあらゆる種類の有機化合物のガスから作製で
きること(例えば、ニー・ティ・ベル(A、T、Be1
l)、エム・ジエン(M、5hen)ら、[ジャーナル
・オブ・アプライド・ポリマー・サイエンスJ(Jou
rnal of Applied Polymer 5
cience)、第17巻、885−892頁(197
3年)等)が知られている。
Prior Art and Problems Organic plasma polymerized films can be prepared from all kinds of organic compound gases such as ethylene gas, benzene, and aromatic silanes (e.g., N.T., Be1).
l), M, 5hen et al., [Journal of Applied Polymer Science J (Jou
rnal of Applied Polymer 5
science), Vol. 17, pp. 885-892 (197
3 years) etc.) are known.

しかし、プラズマ重合膜は、原料ガスの種類、製造条件
等により、成膜性、膜特性等が大きく異なる。一般に炭
化水素系有機化合物をプラズマ重合し、高硬度で傷がつ
きにくく、かつ耐環境性に優れた膜を得ようとすると基
板材を高温に加熱し、かつ高周波13.56MHz近傍
で行なう必要があった。
However, plasma polymerized films vary greatly in film formability, film properties, etc. depending on the type of raw material gas, manufacturing conditions, etc. Generally, in order to obtain a film with high hardness, scratch resistance, and excellent environmental resistance by plasma polymerizing hydrocarbon-based organic compounds, it is necessary to heat the substrate material to a high temperature and perform the polymerization at a high frequency of around 13.56 MHz. there were.

従って、プラズマ重合膜を被覆できる基板材料は自ずと
限られたものとなり、高温度で軟化、あるいは変形する
材料で構成された物品または、特性劣化をきたす各種デ
バイス等には、炭化水素系有機化合物のプラズマ重合法
の適用は困難であった。
Therefore, the substrate materials that can be coated with plasma polymerized films are naturally limited, and hydrocarbon-based organic compounds are recommended for articles made of materials that soften or deform at high temperatures, or for various devices that deteriorate their characteristics. Application of plasma polymerization method was difficult.

発明が解決しようとする問題点 本発明者らは、プラズマ重合法について種々検討を重ね
るうちに、炭化水素の種類により、常温付近でプラズマ
重合膜が形成可能なものが存在することを見出した。
Problems to be Solved by the Invention The inventors of the present invention have repeatedly studied various plasma polymerization methods, and have discovered that some types of hydrocarbons can form plasma-polymerized films at around room temperature.

即ち、本発明の目的は、常温付近の低温度においても炭
化水素系有機化合物をプラズマ重合で形成可能な非晶質
水素化炭素膜の製造方法を提供することを目的とする。
That is, an object of the present invention is to provide a method for producing an amorphous hydrogenated carbon film that can form a hydrocarbon-based organic compound by plasma polymerization even at a low temperature around room temperature.

問題点を解決するための手段 本発明は沸点が断熱第一イオン化ポテンシャルが8.5
乃至10.OeVである炭化水素系有機化合物を真空中
周波数10乃至1000KHzの低周波プラズマ放電分
解法を用いて重合することを特徴とする非晶質水素化炭
素膜の製造方法に関する。
Means for Solving the Problems The present invention has a boiling point with an adiabatic first ionization potential of 8.5.
to 10. The present invention relates to a method for producing an amorphous hydrogenated carbon film, which is characterized by polymerizing a hydrocarbon-based organic compound that is OeV using a low-frequency plasma discharge decomposition method with a frequency of 10 to 1000 KHz in vacuum.

本明細書においては断熱第一イオン化ポテンシャルとは
、気体中の基底状態にある分子から最も高いエネルギー
をもつ1個の電子を無限遠にひき°離して、イオンの最
低振動状態へイオン化するのに必要なエネルギーを電子
ボルト(eV)の単位で表した数値をいい、具体的には
光電子スペクトルにより測定した値をいう。
In this specification, the adiabatic first ionization potential refers to the ability to ionize an ion to its lowest vibrational state by separating the single electron with the highest energy from a molecule in the ground state to infinity. It refers to a numerical value expressing the required energy in units of electron volts (eV), and specifically refers to the value measured by photoelectron spectroscopy.

断熱第一イオン化ポテンシャルが8.5〜10゜OeV
である炭化水素系有機化合物としては、シクロヘキサン
(9,89eV)、プロピレン(9,74eV)、アレ
ン(9,69eV)、1−ブチ:、z(9,59eV)
、シクロブテン(9,43eV)、ベンゼン(9,24
eV)、2−メチルプロペン(9,21eV)、ブタジ
ェン(9,06eV)、ビシクロプロピル(9,04e
■)、シクロペンテン(9,01)、シクロヘプテン(
8,87eV)、トルエン(8,82eV)、シクロオ
クタン(8,82eV)、フェニルアセチレン(8゜7
5eV)、2−メチル−2−ブテン(8,72eV)、
2−フェニルブタジェン(8,57eV)、シクロペン
タジェン(8,57eV)、等が例示される。
Adiabatic first ionization potential is 8.5-10°OeV
Examples of hydrocarbon organic compounds include cyclohexane (9,89eV), propylene (9,74eV), arene (9,69eV), 1-buty:, z (9,59eV)
, cyclobutene (9,43eV), benzene (9,24
eV), 2-methylpropene (9,21eV), butadiene (9,06eV), bicyclopropyl (9,04eV)
■), cyclopentene (9,01), cycloheptene (
8,87eV), toluene (8,82eV), cyclooctane (8,82eV), phenylacetylene (8°7
5 eV), 2-methyl-2-butene (8,72 eV),
Examples include 2-phenylbutadiene (8,57eV) and cyclopentadiene (8,57eV).

本発明において用いられる炭化水素系有機化合物は、単
独で用いてもよく、また混合して用いてらよい。不飽和
結合を有する化合物を用いた場合は、プラズマ重合の際
に開裂して、分子間で架橋構造を形成する働きを有する
ので、不飽和結合を有しない化合物に比べて、基板から
剥離しにくい硬度のある膜が形成される傾向にある。ま
た、本発明に適用しうる炭化水素系有機化合物は、さら
にハロゲン原子、酸素原子、窒素原子、硫黄原子等を含
んでいてもよい。
The hydrocarbon organic compounds used in the present invention may be used alone or in combination. When using a compound with unsaturated bonds, it cleaves during plasma polymerization and has the function of forming a crosslinked structure between molecules, so it is difficult to peel off from the substrate compared to compounds without unsaturated bonds. A hard film tends to be formed. Moreover, the hydrocarbon-based organic compound applicable to the present invention may further contain a halogen atom, an oxygen atom, a nitrogen atom, a sulfur atom, and the like.

ハロゲン原子を含んだ化合物としては、l−クロロ−1
,2,2−トリフルオロエチレン(9,84eV)、臭
化シクロプロピル(9,32eV)、■、1゜4.4−
テトラフルオロブタジェン(8,98eV)、1.1.
1−トリフルオロ−2−ヨードエタン(9゜99eV)
等が例示される。
As a compound containing a halogen atom, l-chloro-1
, 2,2-trifluoroethylene (9,84eV), cyclopropyl bromide (9,32eV), ■, 1°4.4-
Tetrafluorobutadiene (8,98eV), 1.1.
1-trifluoro-2-iodoethane (9°99eV)
etc. are exemplified.

酸素原子を含んだ化合物としてはアセトン(9゜72e
V)、エチルメチルケトン(9,51eV)、ジエチル
エーテル(9,61eV)等が例示される。
As a compound containing an oxygen atom, acetone (9°72e
V), ethyl methyl ketone (9,51 eV), diethyl ether (9,61 eV), and the like.

窒素原子を含んだ化合物としてはアセトアミド(9,8
0eV)、イソプロピルアミン(8,86eV)、エチ
ルアミン(9、19eV)、ジエチルアミン(8゜51
eV)、ピリジン(9,28eV)等が例示される。
As a compound containing a nitrogen atom, acetamide (9,8
0eV), isopropylamine (8,86eV), ethylamine (9,19eV), diethylamine (8°51
eV), pyridine (9,28 eV), and the like.

硫黄原子を含んだ化合物としては、チオフェン(8,8
7eV)、ベンゾチアゾール(8,72eV)等が例示
される。
As a compound containing a sulfur atom, thiophene (8,8
7 eV), benzothiazole (8,72 eV), and the like.

これらの化合物は、単独であるいは面性した炭化水素系
有機化合物と混合して使用され、本発明の非晶質水素化
炭素膜中にハロゲン原子を含有さけることにより、撥水
性、摩耗性、透光性が向上し、特にフッ素では屈折率が
小さくなり、反射防止効果があられれる。
These compounds are used alone or in combination with planar hydrocarbon organic compounds, and by avoiding the inclusion of halogen atoms in the amorphous hydrogenated carbon film of the present invention, water repellency, abrasion resistance, and transparency are achieved. The optical property is improved, and especially in the case of fluorine, the refractive index is reduced, and an antireflection effect can be achieved.

さらに、低温、低周波でのプラズマ重合を損なわない範
囲で他の炭化水素系化合物、例えば、メタン、エタン、
エチレン、アセチレン、プロパン等を混合して用いても
よい。
Furthermore, other hydrocarbon compounds such as methane, ethane,
A mixture of ethylene, acetylene, propane, etc. may be used.

係る化合物を使用するとプラズマ重合を低温(常温〜1
00℃)で行うことができる。
When such compounds are used, plasma polymerization can be carried out at low temperatures (room temperature to 1
00°C).

そのため、耐熱性のある各種セラミックス製品、金属製
品はもちろん耐熱性に乏しいポリメチルメタクリレート
等の樹脂または、熱により特性劣化を受けやすい各種デ
バイス等にも被覆することができるので、本発明を多用
途に展開することができる。
Therefore, it is possible to coat not only various heat-resistant ceramic products and metal products, but also resins such as polymethyl methacrylate that have poor heat resistance, and various devices that are susceptible to property deterioration due to heat, making the present invention versatile. can be expanded to.

本発明において断熱第一イオン化エネルギーが8.5e
Vより小さい炭化水素系有機化合物を使用すると、成膜
性が低下し、炭化水素系有機化合物どうしの架橋度が低
くなり、油状物が形成されるために、基板、反応室ペル
ジャー内が汚染される問題も生じる。
In the present invention, the adiabatic first ionization energy is 8.5e.
If a hydrocarbon-based organic compound smaller than V is used, film-forming properties will decrease, the degree of cross-linking between hydrocarbon-based organic compounds will decrease, and oily substances will be formed, resulting in contamination of the substrate and the inside of the Pelger reaction chamber. Problems also arise.

断熱第一イオン化エネルギーがio、0eVより大きい
炭化水素系有機化合物を用いると、常温の状態では、気
相中で重合反応が進行する確率が高くなり、粉体状の重
合物の形成が促進され、かえって基板上に重合膜は形成
されないため成膜性の低下が引き起こされる。また、粉
体状の重合物が基板上または反応室内を汚染するという
問題も存在する。
When a hydrocarbon-based organic compound with an adiabatic first ionization energy greater than io, 0 eV is used, the probability that the polymerization reaction will proceed in the gas phase at room temperature increases, and the formation of a powdery polymer is promoted. However, since a polymer film is not formed on the substrate, film forming properties are deteriorated. There is also the problem that the powdered polymer contaminates the substrate or the interior of the reaction chamber.

プラズマ重合は、気相状態の分子を減圧下で放電分解し
、発生したプラズマ雰囲気中に含まれる活性中性種ある
いは荷電極を基板上に拡散、電気力、あるいは磁気力等
により誘導し、基板上での再結合反応により固相として
堆積−させる、所謂グロー放電プラズマ重合反応から生
成され、周波数10乃至1000KHzの低周波を用い
たプラズマ法により生成されるプラズマ状態を経て形成
する。面性した炭化水素系有機化合物は、常温近傍の低
温で、かつ高速に成膜される。
In plasma polymerization, molecules in the gas phase are decomposed by discharge under reduced pressure, and active neutral species or charged electrodes contained in the generated plasma atmosphere are induced onto a substrate by diffusion, electric force, magnetic force, etc. The solid phase is deposited by the recombination reaction described above, which is generated from a so-called glow discharge plasma polymerization reaction, and is formed through a plasma state generated by a plasma method using a low frequency of 10 to 1000 KHz. A planar hydrocarbon-based organic compound is formed into a film at a low temperature near room temperature and at a high speed.

プラズマ発生に1000KHz以上の高い周波数を用い
ても、プラズマにより発生した化合物のラジカル種或い
はイオン種の基板への到達数が減り、堆積速度が低下し
、その分、気相中での重合が進んでしまうため、油状化
、粉体化した重合物が形成されやすくなる。しかし、基
板温度を高温に保持することが可能であればブタジェン
等などは100OKI−Iz以上の周波数でプラズマ重
合して成膜することは可能であり、上記したような問題
は生じない。
Even if a high frequency of 1000 KHz or more is used for plasma generation, the number of radical species or ion species of compounds generated by the plasma that reach the substrate decreases, the deposition rate decreases, and polymerization in the gas phase progresses accordingly. As a result, oily and powdered polymers are likely to be formed. However, if it is possible to maintain the substrate temperature at a high temperature, butadiene or the like can be formed into a film by plasma polymerization at a frequency of 100 OKI-Iz or more, and the above-mentioned problem does not occur.

又、10KHz以下の周波数でプラズマを発生して、重
合を行なうと、発生したラジカル種又はイオン種の基板
への到達回数の増大に比較して、イオンダメージが増加
し、その結果、もろくて、荒れた、かつ基板との付着性
に乏しい膜が形成される。
Furthermore, when polymerization is performed by generating plasma at a frequency of 10 KHz or less, ion damage increases compared to the increase in the number of times the generated radical species or ion species reach the substrate, resulting in brittleness and A rough film with poor adhesion to the substrate is formed.

本発明の非晶質水素化炭素膜は、低周波プラズマ法の他
にも、本発明の目的の範囲内でイオン化蒸着法、イオン
ビーム蒸着法、真空蒸着法あるいはスパッタリング法等
を組み合わせて製造してもよい。
The amorphous hydrogenated carbon film of the present invention can be produced by combining ionization deposition method, ion beam deposition method, vacuum deposition method, sputtering method, etc. within the scope of the purpose of the present invention, in addition to the low-frequency plasma method. It's okay.

本発明により形成される非晶質炭素膜は水素含量が全構
成原子に対して10〜60 atomic%であり、以
下のような特徴を有している。
The amorphous carbon film formed according to the present invention has a hydrogen content of 10 to 60 atomic% based on all constituent atoms, and has the following characteristics.

(イ)高硬度である。JIS−に−5400の規格の鉛
筆硬度で3H以上のものが容易に得られる。
(a) High hardness. A pencil hardness of 3H or higher according to the JIS-5400 standard can be easily obtained.

(ロ)あらゆる種類の基材、デバイスに被覆でき、かつ
密着性にすぐれている。
(b) It can be coated on all kinds of base materials and devices and has excellent adhesion.

(ハ)耐溶剤性に優れており、各種溶剤、酸、アルカリ
等に不溶である。
(c) It has excellent solvent resistance and is insoluble in various solvents, acids, alkalis, etc.

(ニ)等方的に均一に堆積され形成されている。(d) It is deposited and formed isotropically and uniformly.

蒸着等でみられるシャドウが無い。There is no shadow seen with vapor deposition, etc.

(ホ)環境安定性にすぐれており、重合膜の緒特性が、
経時的に変化を受けにくい。
(e) It has excellent environmental stability, and the properties of the polymeric film are
Resistant to change over time.

(へ)熱伝導性に優れており、IC等の発熱体に被覆し
ても内部に熱蓄積が生じない。
(f) It has excellent thermal conductivity, so even if it is coated on a heating element such as an IC, no heat will accumulate inside it.

(ト)透光性に優れており、0.2μmの厚さの膜では
、可視光の90%以上が透過可能である。
(g) It has excellent light transmittance, and a film with a thickness of 0.2 μm can transmit 90% or more of visible light.

(チ)耐摩耗性に優れている。高硬度であるが摩擦係数
が低いので耐摩耗性に優れている。
(h) Excellent wear resistance. Although it has high hardness, it has a low friction coefficient and has excellent wear resistance.

(ワ)屈折率が約1.3〜1.6である。(W) The refractive index is about 1.3 to 1.6.

(ヌ)イオン化ポテンシャルが約5.0〜6.OeVで
ある。
(nu) Ionization potential is approximately 5.0 to 6. It is OeV.

第1図および第2図は本発明に係る非晶質水素化炭素膜
の製造装置で容量結合型プラズマCVD装置を示す。第
1図は平行平板型プラズマCVD装置、第2図は円筒型
プラズマCVD装置を示す。
FIGS. 1 and 2 show a capacitively coupled plasma CVD apparatus, which is an apparatus for producing an amorphous hydrogenated carbon film according to the present invention. FIG. 1 shows a parallel plate plasma CVD apparatus, and FIG. 2 shows a cylindrical plasma CVD apparatus.

両装置は、第1図中においては電極板(22)、(25
)および基板(24)が平板型であり、第2図中におい
ては電極板(30)および基板(31)が円筒型である
という点で相違している。また本発明においては、別に
誘導結合型プラズマCVD装置によっても作製すること
ができる。本発明の非晶質水素化炭素膜の製造法を平行
平板型プラズマCVD装置(第1図)を例にとり説明す
る。図中(6)〜(10)は夫々第一イオン化ポテンシ
ャルが8.5及至10.OeVである炭化水素系有機化
合物、Hl、He、Ar等のキャリアガス、その他の添
加化合物ガスが密閉された第1乃至第5タンクで、夫々
のタンクは第l〜第5 tl[弁(11,)〜(15)
とマスフローコントローラー(16)〜(20)に接続
されている。これらのガスは主管(21)を介して反応
室(23)に送り込まれる。
Both devices have electrode plates (22) and (25) in FIG.
) and the substrate (24) are of a flat plate type, whereas the electrode plate (30) and the substrate (31) in FIG. 2 are of a cylindrical type. Further, in the present invention, it can also be produced using a separate inductively coupled plasma CVD apparatus. The method for producing an amorphous hydrogenated carbon film of the present invention will be explained using a parallel plate plasma CVD apparatus (FIG. 1) as an example. In the figure, (6) to (10) have first ionization potentials of 8.5 and 10. The first to fifth tanks are sealed with OeV hydrocarbon organic compounds, carrier gases such as Hl, He, Ar, and other additive compound gases. , ) ~ (15)
and mass flow controllers (16) to (20). These gases are sent into the reaction chamber (23) via the main pipe (21).

反応室(23)にはコンデンサを介して低周波電源(2
6)に接続される平板型電極板(22)と電気的に接地
されるとともに、平板型基板(24)等が載置される平
板型アース電極板(25)が対向配置して設けられてい
る。また上記平板型電極板(22)はコイル(27)を
介して直流電圧源(28)に接続されており、低周波電
源(26)からの電力印加に加え直流バイアス電圧が上
乗せ印加されるようになっている。また電極板(25)
上に載置される基板(24)等は必要であれば図示しな
い加熱手段によって、例えば室温〜lOO℃に加熱され
るようになっている。
A low frequency power source (2) is connected to the reaction chamber (23) via a capacitor.
A flat earth electrode plate (25), which is electrically grounded and on which a flat substrate (24), etc. is placed, is arranged opposite to the flat electrode plate (22) connected to the electrode plate (22). There is. Further, the flat electrode plate (22) is connected to a DC voltage source (28) via a coil (27), so that a DC bias voltage is additionally applied in addition to the power applied from the low frequency power source (26). It has become. Also electrode plate (25)
The substrate (24) and the like placed thereon are heated, if necessary, by a heating means (not shown) to, for example, room temperature to lOO<0>C.

以上の構成において、例えばポリメチルメタクリレート
板上にブタジェンをプラズマ重合し、非晶質水素化炭素
膜を製造する場合、反応室(23)を一定の真空状態と
してから主管(21)を介して第1タンク(6)よりブ
タジェンガス、第2タンク(7)よりキャリアガスとし
てH,ガスを供給する。一方、低周波電源(26)より
平板型電極板(22)に30watts〜l kv、の
電力を印加し両電極板間にプラズマ放電を起こし、予め
加熱された基板(24)上に所望の厚さの非晶質水素化
炭素膜(2)を形成ずろ。
In the above configuration, for example, when butadiene is plasma-polymerized on a polymethyl methacrylate plate to produce an amorphous hydrogenated carbon film, the reaction chamber (23) is brought into a constant vacuum state and then the Butadiene gas is supplied from the first tank (6), and H gas is supplied as a carrier gas from the second tank (7). On the other hand, a power of 30 watts to 1 kv is applied to the flat electrode plate (22) from the low frequency power source (26) to generate a plasma discharge between the two electrode plates to form a desired thickness on the preheated substrate (24). Form an amorphous hydrogenated carbon film (2).

さらに、他の原子、例えばフッ素、塩素等のハロゲン原
子あるいは窒素、リン、ヒ素等のV族元素またはホウ素
、アルミニウム、ガリウムあるいはインジウム等の■族
元素を非晶質水素化炭素膜に添加することも可能で、そ
のためには、それらの元素を含む化合物の蒸気を適宜タ
ンクから反応室(23)に導入して炭化水素系有機化合
物とともにプラズマ重合すればよく炭素膜の特性、例え
ば、耐摩耗性、屈折率、極性等を調整することができる
。その他に、成膜後、上記ガスでボンバードすることに
よっても他原子の添加は可能である。
Furthermore, other atoms, such as halogen atoms such as fluorine and chlorine, V group elements such as nitrogen, phosphorus, and arsenic, or group I elements such as boron, aluminum, gallium, and indium, may be added to the amorphous hydrogenated carbon film. In order to achieve this, vapors of compounds containing these elements may be appropriately introduced from a tank into the reaction chamber (23) and plasma polymerized together with hydrocarbon-based organic compounds. , refractive index, polarity, etc. can be adjusted. Other atoms can also be added by bombarding the film with the above gas after film formation.

尚、第3図に示す容量結合型プラズマCVD装置は、炭
化水素系有機化合物としてトルエン等の常温で液体状の
モノマーを用いたときのもので、恒温!(32)により
炭化水素系有機化合物を(33)を過熱するとともに、
反応室に連結された管(34)も過熱して、炭化水素系
有機化合物を蒸気として反応室(23)内に導入するも
のである。その他の構成は第1図と同様である。
The capacitively coupled plasma CVD apparatus shown in Figure 3 uses a monomer that is liquid at room temperature, such as toluene, as the hydrocarbon-based organic compound, so it is constant temperature! While heating the hydrocarbon organic compound (33) by (32),
The pipe (34) connected to the reaction chamber is also heated and the hydrocarbon-based organic compound is introduced into the reaction chamber (23) as vapor. The other configurations are the same as in FIG. 1.

本発明の非晶質水素化炭素膜は出発原料ガスおよび他の
添加ガスの種類、原料ガスと希釈ガス(H7、不活性ガ
ス)比、放電パワー、圧力、基板温度、DCバイアス電
圧、アニール温度、放電周波数等の製造条件を選択する
ことにより、種々の膜特性に、調整可能である。従って
、上記諸条件は、本発明の非晶質水素化炭素膜の適用対
象物に応じ、所望の膜特性が得られるように適宜設定す
べきである。
The amorphous hydrogenated carbon film of the present invention includes the types of starting material gas and other additive gases, the ratio of material gas to diluent gas (H7, inert gas), discharge power, pressure, substrate temperature, DC bias voltage, and annealing temperature. By selecting manufacturing conditions such as , discharge frequency, etc., various film characteristics can be adjusted. Therefore, the above conditions should be appropriately set depending on the object to which the amorphous hydrogenated carbon film of the present invention is applied so as to obtain desired film characteristics.

例えば、膜特性として該炭素膜を高硬度に形成したい場
合は、低周波電力を高くする、電力周波数を下げる、本
発明の目的の範囲内で基板温度を上げる等、成膜条件を
変化することが有効である。
For example, if you want to form the carbon film with high hardness as a film characteristic, you can change the film forming conditions, such as increasing the low frequency power, lowering the power frequency, or increasing the substrate temperature within the scope of the purpose of the present invention. is valid.

膜の透光性を上げたい場合は上記条件と反対の操作が有
効である。
If it is desired to increase the translucency of the film, the operation opposite to the above conditions is effective.

耐摩耗性を必要とする場合は、非晶質炭素膜中にハロゲ
ン原子、特にフッ素原子を含有させることが有効である
When wear resistance is required, it is effective to include halogen atoms, particularly fluorine atoms, in the amorphous carbon film.

含フツ素化合物としては、フッ素ガス、フッ化メチルガ
ス、四フッ化メタンガス、フッ化エチレンガス、フッ化
エチリデンガス、パーフロロプロパンガス等を使用でき
る。フッ素原子を含有させたときは、膜の透光性が失な
われる傾向にあることに留意する必要がある。
As the fluorine-containing compound, fluorine gas, methyl fluoride gas, tetrafluoromethane gas, fluorinated ethylene gas, fluorinated ethylidene gas, perfluoropropane gas, etc. can be used. It should be noted that when fluorine atoms are contained, the film tends to lose its transparency.

屈折率の高い非晶質水素化炭素膜を得たい場合は、膜中
にシリコン、ゲルマニウム、等の原子を添加する。
If it is desired to obtain an amorphous hydrogenated carbon film with a high refractive index, atoms of silicon, germanium, etc. are added to the film.

シリコン源としては、SiH,,5ttHaガス等;ゲ
ルマニウム源としてはGeH4、GetHsガス等;を
使用すればよい。
As the silicon source, SiH, 5ttHa gas, etc. may be used; as the germanium source, GeH4, GetHs gas, etc. may be used.

導電性に関する極性制御が必要な場合は、前述した、■
族または■族原子を添加することが有効である。■族元
素および■族元素の添加は、それぞれ膜の極性をp型お
よびn型に調整可能である。
If polarity control regarding conductivity is required,
It is effective to add atoms of the group or group II. The addition of group (1) elements and group (2) elements allows the polarity of the film to be adjusted to p-type and n-type, respectively.

■族元素としてはBs AQSG as  I n等が
例示されBを含む化合物としては、B (OC2Hs:
h、BtHe、BCQs、B B r 3、BP、等が
例示される。
Examples of group III elements include Bs AQSG as I n, and examples of compounds containing B include B (OC2Hs:
Examples include h, BtHe, BCQs, B B r 3, BP, and the like.

AQを含む化合物としてはAQ(Of  C3H?)3
、(CHa)3A(21(CtHs)3AI21(i 
 C4Ha)sA12−AQCQs等が例示される。
AQ (Of C3H?)3 is a compound containing AQ.
, (CHa)3A(21(CtHs)3AI21(i
C4Ha)sA12-AQCQs and the like are exemplified.

Gaを含む化合物としてはGa(Oi  C3H?)!
、(CH,)3Ga、(CtHs)3GaSGaCQs
、G aB r*等がある。
A compound containing Ga is Ga (Oi C3H?)!
, (CH,)3Ga, (CtHs)3GaSGaCQs
, G aB r*, etc.

Inを含む化合物としてはI n(Oi  C3H?)
3、(ctHs)aIn等がある。
A compound containing In is In (Oi C3H?)
3, (ctHs)aIn, etc.

V族元素としてはP、As、Sb等が例示され、Pを含
む化合物としては、P O(OCH3)3、(C。
Examples of group V elements include P, As, Sb, etc., and compounds containing P include P O(OCH3)3, (C.

H5)3P、PHs、PF、、POCQs等;ASを含
む化合物としてA s Hs、AsCQ3、AsBr*
等;Sbを含む化合物として5b(OC*Hs)s、5
bC23,5bH5等が例示される。
H5) 3P, PHs, PF, , POCQs, etc.; Compounds containing AS include As Hs, AsCQ3, AsBr*
etc.; 5b(OC*Hs)s, 5 as a compound containing Sb
Examples include bC23 and 5bH5.

上記したハロゲン原子、■族原子、■族原子等の含有量
は、非晶質水素化炭素膜の用途に応じて適宜選定すべき
であり、含有量の調整は、例えば添加化合物の反応室(
23)内への流量制御によって行なうことができる。ま
た、炭素膜中の原子の含有量の測定は、赤外吸収スペク
トル、’H−NMR,13C−NMr(、有機元素分析
、オージェ分光分析等により可能である。
The content of the above-mentioned halogen atoms, group II atoms, group II atoms, etc. should be appropriately selected depending on the use of the amorphous hydrogenated carbon membrane.
23) This can be done by controlling the flow rate inward. Furthermore, the content of atoms in the carbon film can be measured by infrared absorption spectroscopy, 'H-NMR, 13C-NMR, organic elemental analysis, Auger spectroscopy, etc.

下記(a)〜(p)に示した各種基板を使用し、表1中
に示した5つの条件で成膜を試みた(実施例1〜5)。
Using various substrates shown in (a) to (p) below, film formation was attempted under the five conditions shown in Table 1 (Examples 1 to 5).

なお、比較のために本発明の範囲外の条件で成膜した結
果も表1中に示した(比較例1〜5)。
For comparison, the results of film formation under conditions outside the scope of the present invention are also shown in Table 1 (Comparative Examples 1 to 5).

(基板種) (a)  ガラス(コーニング社製#7059)(b)
  シリコンウェハ (C)  アルミ板(A6063) (d)  アルミ板(A5386) (e)  ステンレス板 (f)  アルミ蒸着ガラス板 (g)  クロムスパッタガラス板 (h)  金蒸着ガラス板 (i)  タングステン線 (D  銅板 (k)  A s t S e3蒸着アルミ板((2)
  GD  a−9i堆積アルミ板(m)  ポリエス
テル樹脂(東洋紡社製V−200)塗布アルミ板 (n)  ポリカーボネート樹脂(音大化成社製に−1
300)塗布アルミ板 (0)  メチルメタクリレートPMMA(三菱レーヨ
ン社製BR−85)塗布アルミ板 (p)  ボリアリレート(ユニチカ社製U −400
0)塗布アルミ板 (成膜) 第1図に示すグロー放電分解装置において、まず、反応
室(23)の内部をI O”Torr程度の高真空にし
た後、第1および第2調節弁((11)〜(12))を
解放し、第1タンク(6)より原料ガス、第2タンク(
7)よりH2ガスをマスフローコントローラ(16)〜
(17)により、表1に示すガス量となるように調整し
て反応室(23)内へ流入した。
(Substrate type) (a) Glass (Corning #7059) (b)
Silicon wafer (C) Aluminum plate (A6063) (d) Aluminum plate (A5386) (e) Stainless steel plate (f) Aluminum evaporated glass plate (g) Chrome sputtered glass plate (h) Gold evaporated glass plate (i) Tungsten wire ( D Copper plate (k) A s t S e3 vapor deposited aluminum plate ((2)
GD a-9i deposited aluminum plate (m) Polyester resin (V-200 manufactured by Toyobo Co., Ltd.) coated aluminum plate (n) Polycarbonate resin (manufactured by Ondai Kasei Co., Ltd. -1
300) Coated aluminum plate (0) Methyl methacrylate PMMA (BR-85 made by Mitsubishi Rayon Co., Ltd.) coated aluminum plate (p) Boria arylate (U-400 made by Unitika Co., Ltd.)
0) Coated aluminum plate (film formation) In the glow discharge decomposition apparatus shown in FIG. (11) to (12)) are released, and the raw material gas is transferred from the first tank (6) to the second tank (
7) H2 gas from mass flow controller (16) ~
(17), the amount of gas was adjusted to be as shown in Table 1 and flowed into the reaction chamber (23).

夫々の流量が安定した後に、反応室(23)の内圧が表
1に示した値となるように調整した。一方、基板(24
)としては、前記(a)〜(p)のものを使用し、表1
中に示した温度に予め加熱しておき、各ガス流量が安定
し、内圧が安定した状態で低周波電源(26)を投入し
平板型電極板(22)に表1中に示した周波数、電力を
印加して表1中に示した時間プラズマ重合を行ない、基
板(24)上に非晶質水素化炭素膜を形成した。
After each flow rate became stable, the internal pressure of the reaction chamber (23) was adjusted to the value shown in Table 1. On the other hand, the board (24
), the above (a) to (p) were used, and Table 1
After preheating to the temperature shown in Table 1, and with each gas flow rate stabilized and the internal pressure stabilized, the low frequency power supply (26) was turned on and the flat electrode plate (22) was heated to the frequency shown in Table 1. Plasma polymerization was performed for the time shown in Table 1 by applying electric power to form an amorphous hydrogenated carbon film on the substrate (24).

表1中に各種基板に対する成膜性を○およびXで評価し
た。○はJIS−に−5400の基盤目試験において1
0点が得られた接着性に優れた膜であることを、×は油
状化、粉体化あるいは上記試験において基板からの剥離
が生じ成膜しにくいことを示す。
In Table 1, the film formability on various substrates was evaluated by ○ and X. ○ is 1 in the JIS-5400 basic test
A score of 0 indicates that the film has excellent adhesion, while an x indicates that it is difficult to form a film due to oily state, powdery state, or peeling from the substrate in the above test.

発明の効果 本発明の非晶質水素化炭素膜の製造法は、低温(常温〜
100℃)で成膜が可能であり、高温で変形あるいは軟
化する材料からなる物品にも適用でき、応用範囲が広い
Effects of the Invention The method for producing an amorphous hydrogenated carbon film of the present invention can be carried out at low temperatures (room temperature to
It can be formed into a film at a temperature of 100° C.) and can be applied to articles made of materials that deform or soften at high temperatures, so it has a wide range of applications.

本発明の製造法は、膜の堆積速度が速く、かつ大面積化
が可能である。
According to the manufacturing method of the present invention, the film can be deposited at a high rate and a large area can be formed.

本発明により得られた非晶質水素化炭素膜は、硬度、耐
環境性に優れかつ所望により他片子等を添加して、種々
の特性を付与できる。
The amorphous hydrogenated carbon film obtained by the present invention has excellent hardness and environmental resistance, and can be imparted with various properties by adding other components as desired.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第3図は本発明を実施するための装置の1
例を示す図である。 (6)〜(10)・・・タンク、(11)〜(15)・
・・調節弁(16)〜(20)・・・マスフローコント
ローラー、(21)・・・主管、    (22)・・
・平板型電極板、(23)・・・反応室、   (24
)・・・平板型基板、(25)・・・平板型アース電極
板、 (26)・・・低周波電源、 (27)・・・コイル、
(28)・・・直流電圧源、 (29)・・真空ポンプ
、(30)・・・円筒型電極板、(31)・・・円筒型
基板、(32)・・・恒温槽、   (33)・・・炭
化水素系有機化合物 (34)・・・連結管、   (40)・・・真空容器
、(41)・・・電源、    (42)・・・電極支
持棒、(43)、(44)・・・炭素電極、 (45)・・・基板保持台、 (46)・・・AQ基板
1 and 3 show one of the apparatuses for carrying out the present invention.
It is a figure which shows an example. (6) to (10)...Tank, (11) to (15).
...Control valves (16) to (20)...Mass flow controller, (21)...Main pipe, (22)...
・Flat type electrode plate, (23)...reaction chamber, (24
)... Flat board, (25)... Flat ground electrode plate, (26)... Low frequency power supply, (27)... Coil,
(28)...DC voltage source, (29)...Vacuum pump, (30)...Cylindrical electrode plate, (31)...Cylindrical substrate, (32)...Thermostatic chamber, (33)... )...Hydrocarbon organic compound (34)...Connecting pipe, (40)...Vacuum container, (41)...Power source, (42)...Electrode support rod, (43), ( 44)...Carbon electrode, (45)...Substrate holding stand, (46)...AQ substrate.

Claims (1)

【特許請求の範囲】[Claims] 1、断熱第一イオン化ポテンシャルが8.5乃至10.
0eVである炭化水素系有機化合物を真空中周波数10
乃至1000KHzの低周波プラズマ放電分解法を用い
て重合することを特徴とする非晶質水素化炭素膜の製造
方法。
1. Adiabatic first ionization potential is 8.5 to 10.
A hydrocarbon-based organic compound with a voltage of 0 eV is heated to a frequency of 10 in vacuum.
1. A method for producing an amorphous hydrogenated carbon film, characterized in that polymerization is performed using a low frequency plasma discharge decomposition method of 1000 KHz to 1000 KHz.
JP5551787A 1987-03-09 1987-03-09 Manufacture of amorphous hydrogenated carbon membranes Pending JPS63221840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5551787A JPS63221840A (en) 1987-03-09 1987-03-09 Manufacture of amorphous hydrogenated carbon membranes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5551787A JPS63221840A (en) 1987-03-09 1987-03-09 Manufacture of amorphous hydrogenated carbon membranes

Publications (1)

Publication Number Publication Date
JPS63221840A true JPS63221840A (en) 1988-09-14

Family

ID=13000894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5551787A Pending JPS63221840A (en) 1987-03-09 1987-03-09 Manufacture of amorphous hydrogenated carbon membranes

Country Status (1)

Country Link
JP (1) JPS63221840A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2236331A (en) * 1989-05-31 1991-04-03 Stc Plc Carbon coating of glass fibres
US5135808A (en) * 1990-09-27 1992-08-04 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5190807A (en) * 1990-10-18 1993-03-02 Diamonex, Incorporated Abrasion wear resistant polymeric substrate product
US5378527A (en) * 1991-02-15 1995-01-03 Toyota Jidosha Kabushiki Kaisha Carbon film coated glass
US5527596A (en) * 1990-09-27 1996-06-18 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5637353A (en) * 1990-09-27 1997-06-10 Monsanto Company Abrasion wear resistant coated substrate product
US5643423A (en) * 1990-09-27 1997-07-01 Monsanto Company Method for producing an abrasion resistant coated substrate product
WO2000079021A1 (en) * 1999-06-18 2000-12-28 Sanyo Electric Co., Ltd. Method for treating carbon-based coating and carbon-based coating and parts having carbon-based coating
JP2006052398A (en) * 2004-08-09 2006-02-23 Asm Japan Kk Method for forming polymer film by cvd process
JP2009084692A (en) * 2007-09-27 2009-04-23 Air Products & Chemicals Inc Cyclopentene as precursor for carbon-based film
JP2018048368A (en) * 2016-09-21 2018-03-29 国立大学法人山口大学 Production method of amorphous carbon, and amorphous carbon

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2236331B (en) * 1989-05-31 1993-04-07 Stc Plc Carbon coating of optical fibres
GB2236331A (en) * 1989-05-31 1991-04-03 Stc Plc Carbon coating of glass fibres
US5635245A (en) * 1990-09-27 1997-06-03 Monsanto Company Process of making abrasion wear resistant coated substrate product
US5527596A (en) * 1990-09-27 1996-06-18 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5135808A (en) * 1990-09-27 1992-08-04 Diamonex, Incorporated Abrasion wear resistant coated substrate product
US5637353A (en) * 1990-09-27 1997-06-10 Monsanto Company Abrasion wear resistant coated substrate product
US5643423A (en) * 1990-09-27 1997-07-01 Monsanto Company Method for producing an abrasion resistant coated substrate product
US5844225A (en) * 1990-09-27 1998-12-01 Monsanto Company Abrasion wear resistant coated substrate product
US5190807A (en) * 1990-10-18 1993-03-02 Diamonex, Incorporated Abrasion wear resistant polymeric substrate product
US5378527A (en) * 1991-02-15 1995-01-03 Toyota Jidosha Kabushiki Kaisha Carbon film coated glass
WO2000079021A1 (en) * 1999-06-18 2000-12-28 Sanyo Electric Co., Ltd. Method for treating carbon-based coating and carbon-based coating and parts having carbon-based coating
US6534131B1 (en) 1999-06-18 2003-03-18 Sanyo Electric Co., Ltd. Method for treating carbon film, carbon film and component with carbon film
JP2006052398A (en) * 2004-08-09 2006-02-23 Asm Japan Kk Method for forming polymer film by cvd process
JP2009084692A (en) * 2007-09-27 2009-04-23 Air Products & Chemicals Inc Cyclopentene as precursor for carbon-based film
JP2018048368A (en) * 2016-09-21 2018-03-29 国立大学法人山口大学 Production method of amorphous carbon, and amorphous carbon

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