JPS63218928A - Light guide - Google Patents
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- Publication number
- JPS63218928A JPS63218928A JP62051693A JP5169387A JPS63218928A JP S63218928 A JPS63218928 A JP S63218928A JP 62051693 A JP62051693 A JP 62051693A JP 5169387 A JP5169387 A JP 5169387A JP S63218928 A JPS63218928 A JP S63218928A
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- JP
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- Prior art keywords
- nonlinear optical
- loss
- photon
- exciton
- absorption
- Prior art date
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- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000010419 fine particle Substances 0.000 claims abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 5
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 5
- 230000007704 transition Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract 3
- 239000002184 metal Substances 0.000 claims abstract 3
- 150000002739 metals Chemical class 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 abstract description 18
- 239000000835 fiber Substances 0.000 abstract description 4
- 230000003993 interaction Effects 0.000 description 9
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000009022 nonlinear effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 Cd3 Chemical compound 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光の非線形現象そのものをひき起こす非線形
光学定数の実効的な改善をもたらすものであり、非線形
現象の長距離にわたる伝搬を要する分野、及び非線形現
象の相互作用長を大きくとりたい場合に特に有効となる
光ファイバや基板上に形成された薄膜状光導波路等の光
導波路に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention brings about an effective improvement of the nonlinear optical constant that causes the nonlinear phenomenon of light itself, and is applicable to fields where nonlinear phenomena require propagation over long distances. The present invention relates to optical waveguides such as optical fibers and thin film optical waveguides formed on substrates, which are particularly effective when it is desired to increase the interaction length of nonlinear phenomena.
光ファイバ等の光導波路における光の非線形効果を実効
的に高めるためには、■非線形光学定数の大きい物質を
用いる、■非線形光学媒質との相互作用長を大ぎくする
、■光のビーム径（光と非線形光学媒質との相互作用断
面積）を小さくする、■非線形光学媒質に入射する光の
強度を大きくする、等が有効である。In order to effectively increase the nonlinear effect of light in optical waveguides such as optical fibers, it is necessary to: ■ use a material with a large nonlinear optical constant, ■ increase the interaction length with the nonlinear optical medium, and ■ change the beam diameter of light ( It is effective to reduce the cross-sectional area of interaction between light and the nonlinear optical medium (1) to increase the intensity of the light incident on the nonlinear optical medium.
従来、非線形光学媒質には、前記■の非線形光学定数そ
のものが大きいＧｅ、 ＳＬ 、 ＧａＡＳ、 ＩｎＳ
ｂ。Conventionally, nonlinear optical media include Ge, SL, GaAS, and InS, which have a large nonlinear optical constant as described in (2) above.
b.
ＩｎＡｓ、 Ｃｄ３ 、 ＣｄＳｅ、 ＨｇＣｄＴｅ、
Ｃｄ３Ｓｅ等の半導体をドープしたガラス板が、■、
■の例としては、コア径が小さく長距離導波が可能な通
常の単一モード光ファイバが、それぞれ■の人出力レー
ザ（ＹＡＧ、Ａｒ、にｒ１色素レーザ等）とともに用い
られていた。最近では、前記■〜■を同時に満たす媒質
として、ファイバラマンレーザに代表されるような光ア
クティブ線路の分野で、Ｎｄ” 、 Ｅｒ”°等のイオ
ンをドープした光ファイバが試作されはじめている。と
ころが、■では非線形光学定数が大きいもののくバンド
ギ１７ツブエネルギー値近傍の波長で、χ 〜１０
’ＨＫＳに及ぶものすら存在する）、光の損失が大きく
、相互作用長を大ぎくすることはできない。光ファイバ
については、例えば１，５μｍ帯において−０，２ｄＢ
／ ｋのものが実現されており、この点右利であるが
、χ（３）〜１０−３３８ＫＳと極端に小さい非線形光
学定数を有しているにすぎない。このため前述のＮｄｓ
” 、 ［ｒ３＋をドープすることが考案されたが、残
念なことには、これらには光ファイバの最小損失波長域
が（１，３μｍ、 １．５μｍ帯）におけるドープイ
オンのかなり大きな吸収が存在しており、これが大きな
損失となる。したがって、このような光ファイバを用い
て、非線形現象の相互作用長、伝ｌＩ長を大きくするこ
とは事実上不可能である。InAs, Cd3, CdSe, HgCdTe,
A glass plate doped with a semiconductor such as Cd3Se,
As an example of (2), an ordinary single mode optical fiber with a small core diameter and capable of long-distance waveguiding was used together with a human output laser (YAG, Ar, R1 dye laser, etc.). Recently, optical fibers doped with ions such as Nd'' and Er''° have begun to be prototyped as a medium that simultaneously satisfies the above-mentioned conditions (1) to (2) in the field of optical active lines such as fiber Raman lasers. However, in ■, although the nonlinear optical constant is large, at wavelengths near the bandgi energy value, χ ~ 10
'HKS even exists), the loss of light is large, and the interaction length cannot be greatly increased. For optical fibers, for example, -0.2 dB in the 1.5 μm band
/k has been realized, which is advantageous in this respect, but it only has an extremely small nonlinear optical constant of χ (3) ~ 10-338 KS. Therefore, the aforementioned Nds
”, [r3+ doping was devised, but unfortunately, there is a fairly large absorption of doped ions in the optical fiber's minimum loss wavelength range (1.3 μm, 1.5 μm band). This results in a large loss.Therefore, it is virtually impossible to increase the interaction length of nonlinear phenomena, the transmission II length, using such an optical fiber.
本発明の目的は、前記従来の問題点を改善することにあ
り、損失を伴わない状態で非線形光学定数の増大を図り
、従来の非線形光学媒質と比較して、相互作用長、伝搬
長を大幅に大きくすることが可能な光ファイバ等の光導
波路を実現することである。The purpose of the present invention is to improve the above-mentioned conventional problems by increasing the nonlinear optical constant without loss, and significantly increasing the interaction length and propagation length compared to conventional nonlinear optical media. The objective is to realize an optical waveguide such as an optical fiber that can be made large in size.
（問題点を解決するための手段）
一般にエネルギ一単位に共鳴する波長付近では、比較的
大きな非線形光学定数が得られることが知られている。(Means for Solving the Problem) It is generally known that a relatively large nonlinear optical constant can be obtained near a wavelength that resonates with one unit of energy.
なお、ここで言うエネルギ一単位とは、原子、イオンの
遷移レベルのことを指すが、半導体の場合には、バンド
ギャップに相当することになる。また、励起子単位、不
純物準位もこれに当たる。Note that one unit of energy here refers to the transition level of atoms and ions, but in the case of semiconductors, it corresponds to the band gap. This also applies to exciton units and impurity levels.
しかし、このエネルギー準位間の遷移が吸収に寄付する
場合には、光強度に対して損失として作用する。このた
め、例えば１００７７Ｌ〜１０／ｍとい ゛う長距離に
わたる非線形効果を観測したい場合や、相互作用長を大
きくとりたい場合には、吸収を可能な限り小さくしなけ
ればならないという必然性がでてくる。However, if this transition between energy levels contributes to absorption, it acts as a loss to the light intensity. Therefore, if you want to observe nonlinear effects over long distances, such as 10077L to 10/m, or if you want to increase the interaction length, it is necessary to minimize absorption as much as possible. .
本発明は従来のものと異なり、使用する光の波長域で線
形吸収による損失増加を伴うことなく非線形光学定数の
増大をもたらすものである。特に光ファイバの最小損失
波長域（１，３μｍ、 １．５μｍ帯）おいても後述
の実施例のように上記光ファイバが実現できる。The present invention is different from conventional methods in that it increases the nonlinear optical constant without increasing loss due to linear absorption in the wavelength range of the light used. In particular, even in the minimum loss wavelength range of optical fibers (1.3 μm, 1.5 μm bands), the above optical fiber can be realized as in the embodiments described later.
第１図に１光子過程を伴わない２光子過程のダイヤグラ
ムを示す。ω１．ω２の２つの光子がωりω１＋ω２と
なるωとほぼ共鳴状態となっている場合を第１−（ａ）
図に、ω々２ω１となっている場合を第１−（ｂ）図に
それぞれ示す。半導体においてバンドギャップＥａがｈ
ωに相当する。Figure 1 shows a diagram of a two-photon process that does not involve a one-photon process. ω1. The case in which two photons of ω2 are almost resonant with ω, where ω is ω1 + ω2, is shown in 1-(a).
In the figure, the case where ω2ω1 is obtained is shown in FIG. 1-(b). In semiconductors, the bandgap Ea is h
Corresponds to ω.
この図ではω１．ω２の１光子過程による吸収レベルが
存在しないため、ファイバ中で過剰損失を受けることな
く、２光子過程による非線形光学定数の強調が実現され
る。励起子・不純物準位をこの２光子過程のレベルとし
て用いる場合には、ｈωがこの励起子単位・不純物単位
に相当することになる。第２図に、バンドギャップ、励
起子準位の一例を示す。In this figure, ω1. Since there is no absorption level due to the one-photon process at ω2, enhancement of the nonlinear optical constants due to the two-photon process is achieved without excessive loss in the fiber. When the exciton/impurity level is used as the level of this two-photon process, hω corresponds to the exciton/impurity unit. FIG. 2 shows an example of the band gap and exciton level.
以下、本発明を実施例によりさらに詳しく説明するが、
本発明はこれら実施例に限定されるものではない。Hereinafter, the present invention will be explained in more detail with reference to Examples.
The present invention is not limited to these examples.
〔実施例１〕
比較的χ の大きい非線形光学媒質として、半導体微
粒子を光ファイバのコアにドープする。[Example 1] Semiconductor fine particles are doped into the core of an optical fiber as a nonlinear optical medium with a relatively large χ.
これは１光子過程における共鳴波長では吸収損失がかな
り大きい。（このため、典型的な例としては、２〜３Ｉ
ＩＩＩＩの長さで、６０％透過となる。）第２図に半導
体および金属酸化物のバンドギｊｙツブと励起子単位の
一例が示されている。これらは光ファイバの低損失波長
域（１，０〜１．６μｍ帯）においては透過性を示すが
、ω夕ω１＋ω２となるωに当たる０．５〜０．８μｍ
帯にバンドギャップ、あるいは、励起子準位を有してい
る。このため、光ファイバの低損失波長域で、１光子過
程による損失としての吸収を受けることなく２光子過程
による非線形光学定数の強調が行なわれることになる。This is because the absorption loss is quite large at the resonant wavelength in a one-photon process. (For this reason, as a typical example, 2-3I
With a length of III, it becomes 60% transparent. ) FIG. 2 shows an example of a band gear and an exciton unit in semiconductors and metal oxides. These exhibit transparency in the low-loss wavelength range (1.0 to 1.6 μm band) of optical fibers, but at 0.5 to 0.8 μm, which corresponds to ω, which is ω1 + ω2.
It has a band gap or exciton level. Therefore, in the low-loss wavelength region of the optical fiber, the nonlinear optical constant is enhanced by the two-photon process without being absorbed as a loss by the one-photon process.
具体的には、ＣｄＳ 、 ＣｄＳｅの混晶であるＣｄ３
Ｓｅ１１があげられる。これは、３．Ｓｅの組成比
（、）を調節することによりＣｄＳ 、 ＣｄＳｅのバ
ンドギャツブの間の任意のエネルギー値にＣｄＳよＳｅ
、Ｊｃのバンドギャップ値を設定できる半導体であり、
６０％透過の１光子過程でχ は１０−１６〜１０−
１７８ＫＳに達する。これを光ファイバにドープすると
、低損失波長域（０，８μＴｒＬ〜１，５μｍ帯）で１
光子過程に起因する損失を伴なうことなく２光子過程に
よるχ の増強が実現できる。Specifically, Cd3, which is a mixed crystal of CdS and CdSe,
Se11 is mentioned. This is 3. By adjusting the Se composition ratio (, ), CdS and Se can be adjusted to an arbitrary energy value between the band gaps of CdS and CdSe.
, Jc is a semiconductor that can set the band gap value,
In a one-photon process with 60% transmission, χ is 10-16 to 10-
It reaches 178KS. When this is doped into an optical fiber, 1
χ can be enhanced by the two-photon process without loss due to the photon process.
〔実施例２〕
２光子過程に用いるエネルギー準位を励起子単位、不純
物準位に設定することも可能であるが、ここでは励起子
準位の例を示す前述のように非線形光学媒質として、１
光子過程の励起子吸収のピークにほぼ共鳴する状態でこ
れらを使用すると、大きい吸収損失を招く。この励起子
に対し、１光子過程で非共鳴であり、２光子過程でほぼ
共鳴するように光の波長を設定すると、吸収損失のない
非線形光学定数の大きい媒質が実現できる。これは２光
子過程での共鳴によりχ が増強されるためである。[Example 2] It is also possible to set the energy level used in the two-photon process to be an exciton unit or an impurity level, but here we will show an example of the exciton level as a nonlinear optical medium as described above. 1
If they are used in a state that is approximately resonant with the exciton absorption peak of the photon process, large absorption losses will result. If the wavelength of light is set so that the exciton is non-resonant in the one-photon process and almost resonant in the two-photon process, a medium with no absorption loss and a large nonlinear optical constant can be realized. This is because χ is enhanced due to resonance in the two-photon process.
例えば、第２図に示したように、Ｃｄ３ 、 ＣｄＳｅ
は ２．５４ ｅＶ、 １．８２ ｅＶ付近に、Ｃｄ
Ｓ。For example, as shown in FIG. 2, Cd3, CdSe
is around 2.54 eV, 1.82 eV, Cd
S.
５ｅ１−、はこの間の２．０４〜２．０９ ｅＶ付近に
、それぞれ励起子吸収のピークを有している。ＣｄＳで
は１．３μＴｒＬＹＡＧレーザと０．７７μｍ（７）半
導体レーザというように、２個の光子のエネルギー和が
第１−（ａ）図のように、この励起子吸収のピーク付近
にくるように設定できるので、上述の条件を満たすこと
ができる。また、ＣｄＳ 、 ＣｄＳｅ、 ＣｕＣｊ
。5e1- and 5e1- have exciton absorption peaks in the vicinity of 2.04 to 2.09 eV, respectively. In CdS, the settings are made such as the 1.3 μTrLYAG laser and the 0.77 μm (7) semiconductor laser so that the sum of energy of two photons is near the peak of exciton absorption, as shown in Figure 1-(a). Therefore, the above-mentioned conditions can be satisfied. Also, CdS, CdSe, CuCj
.
ＣｕＢｒでは、２個の励起子が互いに束縛し合って励起
子分子を構成するので、大きな非線形光学定数が得られ
る。これは、１個の光子が励起子吸収のピークと非共鳴
であっても、第１−（ｂ）図のように、２個の光子が、
励起子分子のレベルとほぼ共鳴する状態が作り出せ、非
線形定数の増強が起こるためである。この励起子分子に
は大きな電子軌道が存在するので、巨大振動子効果が起
こり、特に大きな非線形光学定数が得られる。ファイバ
の低損失波長域で、この効果を利用するにはＧａＡｓ。In CuBr, two excitons bind each other to form an exciton molecule, so a large nonlinear optical constant can be obtained. This means that even if one photon is non-resonant with the exciton absorption peak, two photons, as shown in Figure 1-(b),
This is because a state that almost resonates with the level of exciton molecules can be created, and the nonlinear constant is enhanced. Since this exciton molecule has a large electron orbit, a giant oscillator effect occurs, resulting in a particularly large nonlinear optical constant. GaAs is used to take advantage of this effect in the low-loss wavelength range of fiber.
ＩｎＰ、 ＣｄＴｅ、 ＣｄＳｅ等の利用が有効テアル
。Effective materials include InP, CdTe, and CdSe.
ドープする結晶の寸法が１００人程入部下（微粒子）の
場合、ω子すイズ効果によって電子の束縛エネルギーが
大きくなり、室温状態でも励起子吸収のピークが観測で
きることがわかっており、これに対しても２光子遷移の
利用により、良質な非線形光学媒質が、実現できる。ざ
らに、ドープ粒子の寸法を制御することにより、励起子
吸収のエネルギー値を制御することができる。It is known that when the size of the doped crystal is about 100 particles (fine particles), the binding energy of electrons becomes large due to the ω-Size effect, and an exciton absorption peak can be observed even at room temperature. However, by utilizing two-photon transition, high-quality nonlinear optical media can be realized. In general, by controlling the dimensions of the doped particles, the energy value of exciton absorption can be controlled.
〔発明の効果〕
以上説明したように、本発明によれば、所望の光の波長
域で、特に光ファイバの最小損失波長域である１、３μ
ｍ、 １．５μ肌帯で過剰損失がなく、非線形効果の
大きい光ファイバが実現できる。このため、本発明は、
ソリトンレーザ、ソリトン伝送、光パルス圧縮、光子数
の被破壊測定、光子数状態無歪伝送等の非線形光学現象
の長距離にわたる伝搬を要する分野、相互作用長を長く
する必要のある分野、損失が特性劣化に大きな影響を及
ばずような分野に大きな貢献を果たすものである。[Effects of the Invention] As explained above, according to the present invention, in the desired wavelength range of light, especially in the 1 and 3μ wavelength range, which is the minimum loss wavelength range of optical fibers.
It is possible to realize an optical fiber with a skin band of 1.5μ, no excessive loss, and a large nonlinear effect. For this reason, the present invention
Fields that require long-distance propagation of nonlinear optical phenomena such as soliton lasers, soliton transmission, optical pulse compression, destructive measurement of photon numbers, distortion-free transmission of photon number states, fields that require a long interaction length, and fields that require a long interaction length. This will make a major contribution to fields where it does not have a major effect on characteristic deterioration.
第１−（ａ）図はω１≠ω２でω２ω１＋ω２の２光子
過程のダイヤグラム、第１−（ｂ）図はω１−ω２でω
夕２ω１のダイヤグラム、第２図は半導体、金属酸化物
のバンドギャップ、及び励起子単位を示す図である。
（ａ） １．Ｌ）＝ω＋十ω２
（ｂ） ωｚ２ωＩ
第２図
ｑｒ
バンドキーｙ＋７ア １冴力□産Ｃ子準ｆ立
亀小値（３ｏＯに）Figure 1-(a) is a diagram of a two-photon process with ω1≠ω2 and ω2ω1+ω2, and Figure 1-(b) is a diagram of a two-photon process with ω1-ω2 and ω
Figure 2 is a diagram showing the band gap of semiconductors and metal oxides, and the exciton unit. (a) 1. L) = ω + 10ω2 (b) ωz2ωI Fig. 2 qr Band key y + 7a 1 Saeki □ Production C child quasi f standing turtle small value (to 3oO)
Claims (1)
の多光子過程がバンドキャップエネルギー値の近傍で起
きるか、あるいは励起子吸収エネルギー値の近傍で起き
るような半導体、金属あるいは金属酸化物の微粒子がド
ープされていることを特徴とする光導波路。Semiconductors, metals, or metal oxides in which one-photon transition does not occur at the wavelength of the light used, and multiphoton processes of two or more photons occur near the band gap energy value or near the exciton absorption energy value. An optical waveguide characterized in that it is doped with fine particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5169387A JPH0786627B2 (en) | 1987-03-06 | 1987-03-06 | Optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5169387A JPH0786627B2 (en) | 1987-03-06 | 1987-03-06 | Optical waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63218928A true JPS63218928A (en) | 1988-09-12 |
| JPH0786627B2 JPH0786627B2 (en) | 1995-09-20 |
Family
ID=12893980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5169387A Expired - Lifetime JPH0786627B2 (en) | 1987-03-06 | 1987-03-06 | Optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786627B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2689982A1 (en) * | 1992-04-13 | 1993-10-15 | Alcatel Nv | Optical communication system with optical device protection |
| US5603772A (en) * | 1994-08-16 | 1997-02-18 | Nec Corporation | Furnace equipped with independently controllable heater elements for uniformly heating semiconductor wafers |
| JP2006514711A (en) * | 2002-10-02 | 2006-05-11 | スリーエム イノベイティブ プロパティズ カンパニー | Multiphoton photosensitization system |
| JP2006514709A (en) * | 2002-10-02 | 2006-05-11 | スリーエム イノベイティブ プロパティズ カンパニー | Multiphoton photosensitization method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59133530A (en) * | 1983-01-20 | 1984-07-31 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type nonlinear optical element and its manufacture |
-
1987
- 1987-03-06 JP JP5169387A patent/JPH0786627B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59133530A (en) * | 1983-01-20 | 1984-07-31 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type nonlinear optical element and its manufacture |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2689982A1 (en) * | 1992-04-13 | 1993-10-15 | Alcatel Nv | Optical communication system with optical device protection |
| US5603772A (en) * | 1994-08-16 | 1997-02-18 | Nec Corporation | Furnace equipped with independently controllable heater elements for uniformly heating semiconductor wafers |
| JP2006514711A (en) * | 2002-10-02 | 2006-05-11 | スリーエム イノベイティブ プロパティズ カンパニー | Multiphoton photosensitization system |
| JP2006514709A (en) * | 2002-10-02 | 2006-05-11 | スリーエム イノベイティブ プロパティズ カンパニー | Multiphoton photosensitization method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0786627B2 (en) | 1995-09-20 |
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