JPS6321545A - Manufacture of moisture sensor - Google Patents
Manufacture of moisture sensorInfo
- Publication number
- JPS6321545A JPS6321545A JP16555986A JP16555986A JPS6321545A JP S6321545 A JPS6321545 A JP S6321545A JP 16555986 A JP16555986 A JP 16555986A JP 16555986 A JP16555986 A JP 16555986A JP S6321545 A JPS6321545 A JP S6321545A
- Authority
- JP
- Japan
- Prior art keywords
- film
- humidity sensor
- manufacturing
- organic film
- sensor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract 3
- 238000001704 evaporation Methods 0.000 claims abstract 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 238000002485 combustion reaction Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000178 monomer Substances 0.000 abstract description 2
- 239000003505 polymerization initiator Substances 0.000 abstract description 2
- 238000006116 polymerization reaction Methods 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000003795 desorption Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 235000001270 Allium sibiricum Nutrition 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は有機膜を感湿材料として用いる湿度センサの
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method of manufacturing a humidity sensor using an organic film as a moisture-sensitive material.
（従来の技術）
有機膜を感湿材料とする素子は従来上シ非常に多く提案
されている。その基本構成は膜の両側に電極を設け、湿
度変化に対応する有機膜の容量、抵抗の変化を測定する
ものがほとんどである。この構成は膜がそれ自体で自立
する場合を除き、通常はなんらかの基板上に、ちくじ形
成される。この場合、第４図に示すようにまず基板１上
に、゛下部電極２を形成し、次に感湿膜３を形成し、次
に上部電極４を形成する。尚、６はリード線である。(Prior Art) A large number of devices using organic films as moisture-sensitive materials have been proposed in the past. The basic structure of most of them is to provide electrodes on both sides of the membrane and measure changes in the capacitance and resistance of the organic membrane in response to changes in humidity. This configuration is typically formed on some type of substrate, unless the membrane is self-supporting. In this case, as shown in FIG. 4, first a lower electrode 2 is formed on the substrate 1, then a moisture sensitive film 3 is formed, and then an upper electrode 4 is formed. Note that 6 is a lead wire.
この際感湿膜は、ｄｉｐやスピンコード法で形成される
ためなんらかの方法で感湿膜をパターニングし、下部゛
磁極２を露出しなければならない０通常の無機膜金属膜
と異なり、有機膜は一般にＰＥＰで用いられるレジスト
類と性質が近いためレジストをマスクにしたエツチング
は、困難な場合が多い。At this time, since the moisture-sensitive film is formed by dip or spin-coding, the moisture-sensitive film must be patterned by some method to expose the lower magnetic pole 2. Unlike ordinary inorganic films and metal films, organic films are Since the properties are similar to resists generally used in PEP, etching using a resist as a mask is often difficult.
（発明が解決しようとする問題点）
以上のべたように、従来の有機膜を用いた湿度センサの
製造方法では、有機膜のバターニングが最も重要な問題
となっている。(Problems to be Solved by the Invention) As described above, in the conventional method of manufacturing a humidity sensor using an organic film, the most important problem is the patterning of the organic film.
本発明では、このパターニング、特に、コンタクトをと
るために最少限必要不可欠なスルーホールの形成方法を
提供し、生産性に優れ汎用性の高い湿度センサの製造方
法を提案しようとするものである。The present invention aims to provide a method for patterning, in particular a method for forming the minimum necessary through holes for making contact, and to propose a highly productive and highly versatile method for manufacturing a humidity sensor.
（問題点を解決するための手段）
本発明の骨子は、有機感湿膜の微小部分を、レーザー、
加熱されたグローブ超音波振動子などを用いて、加熱除
去し、スルーホールを開ける点にある。また、これを介
して導電路を形成し、上下のコンタクトをとる際に、通
常のパターニング法では、段切れによって、コンタクト
が不可能な場合にも、熱可塑性膜であれば本発明の方法
によって、ホール壁をなだらかにし、この問題を克服す
ることができる。(Means for Solving the Problems) The gist of the present invention is to remove a minute portion of an organic moisture-sensitive film using a laser,
The point is to use a heated globe ultrasonic vibrator to remove heat and open a through hole. In addition, when forming a conductive path through this and making upper and lower contacts, if contact is impossible with normal patterning methods due to step breaks, the method of the present invention can be used if the thermoplastic film is used. , the hall walls can be smoothed and this problem can be overcome.
（作 用）
有機膜を微小加熱によりて除去することによって通常の
バターニング法では避けられない、様々な問題を回硅で
きる。まず、マスクをかけてＰＥＰする場合には、個々
の有機材料とと成膜条件ごとに対薬品性、溶解性などを
チェックする必要があり開発は著しい困難を伴う。また
たとえ、バターニングできたとしても、その際に触れた
薬品の影響によって湿度特性が劣化する可能性もある。(Function) By removing the organic film by micro-heating, various problems that cannot be avoided with normal buttering methods can be avoided. First, when performing PEP using a mask, it is necessary to check chemical resistance, solubility, etc. for each individual organic material and film formation condition, making development extremely difficult. Furthermore, even if buttering is possible, the humidity characteristics may deteriorate due to the effects of chemicals that come in contact with it during buttering.
これらに対して１本発明の方法では、まったく他薬品類
にふれないため、これらによる悪影響を考慮する必要が
なく、単に、穴の開く条件さえおさえればよい。On the other hand, in the method of the present invention, since there is no contact with other chemicals, there is no need to consider the adverse effects of these chemicals, and it is only necessary to control the conditions for forming holes.
このことは、特に湿度センサに適用された有機膜に用い
た際に以下の理由で効果が大きい。即ち一般に用いられ
る有機膜に比較して、湿度センサ用膜では水の吸着、脱
離を容易にするため膜の構造がち密でない、あるいは重
合度が低い場合が多い、このような膜では溶剤などが、
内部に含浸されやすく、影響を受けやすい、−！た、吸
着、脱離、機能はバルブではなく表面で支配されており
、薬品がたとえ膜自体をおかさなくても１表面を被覆、
変質させれば、特性は容易に変化してしまう。This is particularly effective when used in organic films applied to humidity sensors for the following reasons. In other words, compared to commonly used organic membranes, membranes for humidity sensors often have a less dense structure or a lower degree of polymerization to facilitate adsorption and desorption of water. but,
Easily impregnated inside, easily affected, -! In addition, adsorption, desorption, and functions are controlled by the surface, not by the valve, and even if the chemical does not damage the membrane itself, it will coat one surface.
If it is altered, its characteristics will change easily.
次に、膜両面間での導通をとる際には膜自体の厚みによ
って導通路の段切れが生じやすい。本発明の方法では熟
卵そ性樹脂を用いて、膜の段差部（スルーホール壁面）
の形状上なだらかにすることが可能であり、蒸着、スパ
ッタなどの方法によりて、容易に段切れなく導通路を形
成することができる。Next, when establishing conduction between both surfaces of the membrane, breaks in the conductive path are likely to occur due to the thickness of the membrane itself. In the method of the present invention, the step part of the membrane (through-hole wall surface) is
The shape of the conductive path can be made smooth, and the conductive path can be easily formed without any step breaks by methods such as vapor deposition and sputtering.
以上を組み合わせることによって、これまで、膜自体を
変えるごとに改変が必要だったパターニングプロセス（
薬品特性への影響チェック）をある程度汎用化すること
ができ、ひいては種々の特性の湿度センサの製造が容易
となる。By combining the above, the patterning process (which previously required modification every time the film itself was changed)
(checking the influence on chemical properties) can be generalized to a certain extent, which in turn facilitates the manufacture of humidity sensors with various properties.
（実施例）
第１図は１本発明を用いて製作した最も基本的な湿度セ
ンサの構造を示したものである。１０ＩＩ冨角の鏡面研
磨セラミック基板１上に、下部電極２として、 ０ｒ−
Ａｕを蒸着し、その上に、感湿膜３として、アクリルモ
ノマーに重合開始剤を数多添加したものをスピンコート
シ、加熱重合させる。(Example) FIG. 1 shows the structure of the most basic humidity sensor manufactured using the present invention. 0r-
Au is vapor-deposited, and on top of that, a moisture-sensitive film 3 in which a number of polymerization initiators are added to an acrylic monomer is spin-coated and polymerized by heating.
この後に、上部電極４として、Ａｕを蒸着する。この後
、上部電極４に履われていない適当な下部電極２上の有
機膜層部分を■２レーザーを用いて蒸発除去させた。こ
の際、下部電極２まで、破壊せぬようＰＣ％［Ｒ時間を
調節してやる。透明膜の場合には赤外波長ＣＯ２レーザ
が適しているが、膜に染料などで着色しておけば、ｃ０
２の外に一般に広く用いられているＹＡＧレーザにても
加工が可能である。After this, Au is deposited as the upper electrode 4. Thereafter, the portion of the organic film layer on the appropriate lower electrode 2 that was not covered by the upper electrode 4 was evaporated and removed using a laser beam. At this time, the PC% [R time is adjusted so as not to destroy the lower electrode 2. In the case of a transparent film, an infrared wavelength CO2 laser is suitable, but if the film is colored with dye etc., the c0
In addition to 2, processing can also be performed using a YAG laser, which is generally widely used.
ＣＯ２レーザは、有機物には吸収されるが、金属Ｓｉは
透過しやすく特にこの発明の構成において有利である。The CO2 laser is absorbed by organic substances, but it easily passes through metal Si, which is particularly advantageous in the configuration of the present invention.
このようにして、下部電極を露出させた後、各電極よυ
、コンタクトをとシ累子を完成させることかでさる。下
部電極形成までは第４図で示した従来の製造法と同様で
ある。この後第１の方法としては治具あるいは、シール
チーブなどで、下部電極を露出させる部分をカバーし、
スピンコードをする。この方法では、カバーするものに
よる段差で、形成される膜厚が不均一にな９−ｖすく、
作業性も悪い。第２の方法として通常のレジストＰＥＰ
では前述のごとく、薬品による影響をそれぞれ考慮する
必要がある。In this way, after exposing the bottom electrode, each electrode
, it is possible to complete the contact and Shiyuko. The process up to the formation of the lower electrode is the same as the conventional manufacturing method shown in FIG. After this, the first method is to cover the exposed part of the lower electrode with a jig or seal chive, etc.
Do a spin code. In this method, the thickness of the formed film is uneven due to the step difference caused by the covering material, and
Workability is also poor. The second method is regular resist PEP
As mentioned above, it is necessary to consider the effects of each drug.
第２図は、この変形例で、膜を介して上部電極を基板上
に設けた上部電極アンカーまで引きまわしたものである
。この素子では感湿膜として、塩ビ系樹脂など熱可塑性
のものを用い、成膜後レーザーを照射し、開孔する。こ
の場合中央部が加熱除去されると、この余熱によシ、周
辺部がダレ。FIG. 2 shows a modification of this example in which the upper electrode is routed through the membrane to an upper electrode anchor provided on the substrate. In this element, a thermoplastic material such as a vinyl chloride resin is used as the moisture-sensitive film, and after the film is formed, a laser is irradiated to open the film. In this case, when the central part is heated and removed, the peripheral part sag due to this residual heat.
壁がなだらかになる。この後、上部電極を蒸着により形
成し、該スルーホールを介して、アンカーと接続する。The walls become smooth. Thereafter, an upper electrode is formed by vapor deposition and connected to the anchor via the through hole.
この構造では、実施例１よシも上部電極のワイヤーコン
タクト強度を上げることができる。With this structure, it is possible to increase the wire contact strength of the upper electrode as well as in the first embodiment.
第３図は、これを班π上に適用したものである。FIG. 3 shows this applied to the square π.
以上述べた他に、加熱にはヒータを内蔵した微小グロー
ブ、超音波振動子、電子ビームなどを用いてもよい。In addition to those described above, a micro globe with a built-in heater, an ultrasonic vibrator, an electron beam, etc. may be used for heating.
以上述べてきたように、本発明を用いれば、従来のパタ
ーニング法に伴う種々の薬品によるダメージを回避し、
加熱条件を変えることで、多くの膜に適応できる汎用性
の高いパターニング方法が可能となる。また、熱可塑性
樹脂を用いた場合には、スルーホール壁形状をなだらか
にすることができ１通常の電極形成プロセスによって容
易にホールを介したコンタクトをとることができる。As described above, if the present invention is used, damage caused by various chemicals associated with conventional patterning methods can be avoided,
By changing the heating conditions, a highly versatile patterning method that can be applied to many films becomes possible. Furthermore, when a thermoplastic resin is used, the wall shape of the through hole can be made gentle, and contact can be easily made through the hole by a normal electrode forming process.
以上により、フレキシビリティが高く、薬品などの影響
のない、湿度センサ製造が可能となり、センサ開発のス
ピードを著しく向上することができる。また材料′５／
：選べば、コンタクトホール形成時に最も生じやすい段
切れの問題を解決することができ、素子の設計の自由度
が大巾に上がる。特に、上部電極のコンタクトパッドを
基板上や、バッジページ舊ン膜上に直接設けることがで
き、リードワイヤーのボンディング強度を向上させるこ
とができる。As a result of the above, it is possible to manufacture humidity sensors with high flexibility and without the influence of chemicals, and the speed of sensor development can be significantly improved. Also material'5/
: If selected, it is possible to solve the problem of step breakage that is most likely to occur when forming contact holes, and the degree of freedom in device design is greatly increased. In particular, the contact pad of the upper electrode can be provided directly on the substrate or the badge page bottom film, and the bonding strength of the lead wire can be improved.
第１図は、この発明の詳細な説明するため＠１示す湿度
センサの断面図、第２図は本発明による他の実施例を説
明するために第１図で示した素子の一部改変型素子に適
用した場合の素子の断面図、第３図は本発明の製造方法
をＦＥＴ型湿度七ンテに適用した場合のセンサを示す断
面図、第４図は、従来プロセスによる素子の断面図であ
る。
ｌ・・・基板
２・・・下部−極
３・・・感湿膜
４・・・上部４極
５・・・下部電極引出部
６・・・リード線
７・・・Ｓ１ウエハ
８・・・リース領域
９・・・ドレイン領域
１０・・・ゲート絶縁膜
１１・・・ソース電極
１２・・・ドレイン電極
１３・・・ゲート電極
１４・・・ゲート電極アンカー
１６・・・上部電極アンカー
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
第 ３ 図
第 ４ 図FIG. 1 is a sectional view of a humidity sensor shown at 1 for detailed explanation of the present invention, and FIG. 2 is a partially modified version of the element shown in FIG. 1 for explaining another embodiment of the present invention. FIG. 3 is a cross-sectional view of a sensor when the manufacturing method of the present invention is applied to an FET type humidity sensor, and FIG. 4 is a cross-sectional view of an element produced by a conventional process. be. l...Substrate 2...Lower pole 3...Moisture sensitive film 4...Upper 4 poles 5...Lower electrode extraction part 6...Lead wire 7...S1 wafer 8... Lease region 9...Drain region 10...Gate insulating film 11...Source electrode 12...Drain electrode 13...Gate electrode 14...Gate electrode anchor 16...Top electrode anchor agent Patent attorney Shi Nori Chika Ken Yudo Takehana Kikuo Figure 3 Figure 4
Claims (13)
センサにおいて有機膜の一部を加熱することによって、
焼散蒸発あるいは溶融させて、除去し該膜を貫通するス
ルーホールを形成することを特徴とする湿度センサの製
造方法。(1) By heating a part of the organic film in a humidity sensor that uses an organic film as a humidity sensing part between a pair of electrodes,
A method for manufacturing a humidity sensor, which comprises removing the film by evaporation or melting to form a through hole penetrating the film.
ている電極とのコンタクトをとることを特徴とする特許
請求の範囲第１項記載の湿度センサの製造方法。(2) The method for manufacturing a humidity sensor according to claim 1, wherein contact is made with an electrode provided on the first surface of the film through a through hole.
ッタ印刷法などにより導電膜を形成し、スルーホールを
介する導電路を該膜第１面側と、第２面側の間に形成す
ることを特徴とする特許請求の範囲第２項記載の湿度セ
ンサの製造方法。(3) After forming the through hole, form a conductive film from the second surface of the film by vapor deposition sputter printing, etc., and form a conductive path via the through hole between the first surface and the second surface of the film. A method of manufacturing a humidity sensor according to claim 2, characterized in that:
面をなだらかな形状となすことにより導電膜の段切れを
防ぐことを特徴とする特許請求の範囲第３項記載の湿度
センサの製造方法。(4) The method for manufacturing a humidity sensor according to claim 3, characterized in that breaking of the conductive film is prevented by using a thermoplastic resin as the organic film and forming the through-hole wall surface into a gentle shape.
ることを特徴とする特許請求の範囲第１項記載の湿度セ
ンサの製造方法。(5) The method for manufacturing a humidity sensor according to claim 1, wherein the organic film and electrode structure are formed on an insulating substrate.
タ上に形成されることを特徴とする特許請求の範囲第１
項記載の湿度センサの製造方法。(6) Claim 1, characterized in that the organic film and the groove structure of the electrode are formed on a field effect transistor.
2. Method for manufacturing the humidity sensor described in Section 1.
なることを特徴とする特許請求の範囲第１項記載の湿度
センサの製造方法。(7) The method for manufacturing a humidity sensor according to claim 1, wherein the method for removing the organic film by heating is irradiation with a laser.
とする特許請求の範囲第１項記載の湿度センサの製造方
法。(8) The method for manufacturing a humidity sensor according to claim 1, wherein the organic film is heated by irradiating the organic film with an electron beam.
とする特許請求の範囲第１項記載の湿度センサの製造方
法。(9) The method for manufacturing a humidity sensor according to claim 1, which comprises bringing a heated iron into contact with the organic film.
を特徴とする特許請求の範囲第１項記載の湿度センサの
製造方法。(10) The method for manufacturing a humidity sensor according to claim 1, characterized in that the organic film is brought into contact with the tip of a minute combustion body.
せることを特許とする特許請求の範囲第１項記載の湿度
センサの製造方法。(11) The method for manufacturing a humidity sensor according to claim 1, which patents the method of rapidly heating an organic film using an ultrasonic vibrator.
あるいはＳｉあるいはその絶縁膜上に延長し、直接付着
することを特徴とする特許請求の範囲第７項記載の湿度
センサの製造方法。(12) The method for manufacturing a humidity sensor according to claim 7, wherein the electrode on the humidity sensitive film is extended through a through hole onto the substrate, Si or its insulating film, and directly attached.
とを特徴とする特許請求の範囲第５項乃至第６項記載の
湿度センサの製造方法。(13) The method for manufacturing a humidity sensor according to claims 5 to 6, characterized in that the irradiation heating is performed using a CO_2 laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16555986A JPS6321545A (en) | 1986-07-16 | 1986-07-16 | Manufacture of moisture sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16555986A JPS6321545A (en) | 1986-07-16 | 1986-07-16 | Manufacture of moisture sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6321545A true JPS6321545A (en) | 1988-01-29 |
Family
ID=15814660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16555986A Pending JPS6321545A (en) | 1986-07-16 | 1986-07-16 | Manufacture of moisture sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6321545A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252248A (en) * | 1988-08-17 | 1990-02-21 | Yamatake Honeywell Co Ltd | Moisture sensitive element |
| JPH031457A (en) * | 1989-05-29 | 1991-01-08 | Furukawa Battery Co Ltd:The | Cell element composite of storage battery and nickel zinc sealed battery |
| JPH03137555A (en) * | 1989-10-24 | 1991-06-12 | Yamatake Honeywell Co Ltd | Humidity-sensitive element |
| JPH0374354U (en) * | 1989-11-24 | 1991-07-25 | ||
| WO2017163715A1 (en) * | 2016-03-25 | 2017-09-28 | 株式会社Ｐｒｏｖｉｇａｔｅ | High-sensitivity biosensor and method for producing same |
-
1986
- 1986-07-16 JP JP16555986A patent/JPS6321545A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252248A (en) * | 1988-08-17 | 1990-02-21 | Yamatake Honeywell Co Ltd | Moisture sensitive element |
| JPH031457A (en) * | 1989-05-29 | 1991-01-08 | Furukawa Battery Co Ltd:The | Cell element composite of storage battery and nickel zinc sealed battery |
| JPH03137555A (en) * | 1989-10-24 | 1991-06-12 | Yamatake Honeywell Co Ltd | Humidity-sensitive element |
| JPH0374354U (en) * | 1989-11-24 | 1991-07-25 | ||
| WO2017163715A1 (en) * | 2016-03-25 | 2017-09-28 | 株式会社Ｐｒｏｖｉｇａｔｅ | High-sensitivity biosensor and method for producing same |
| JPWO2017163715A1 (en) * | 2016-03-25 | 2019-01-31 | 株式会社Ｐｒｏｖｉｇａｔｅ | High-sensitivity biosensor and manufacturing method thereof |
| US10996194B2 (en) | 2016-03-25 | 2021-05-04 | Provigate Inc. | High-sensitivity biosensor and method for producing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2149922A (en) | Capacitive moisture sensor and process for producing same | |
| JPS6321545A (en) | Manufacture of moisture sensor | |
| KR900005565A (en) | Improved pattern formation method | |
| JPS63163265A (en) | Moisture sensitive element and its production | |
| KR970047959A (en) | Pyroelectric infrared sensor and its manufacturing method | |
| JPS63208735A (en) | Production of electrostatic capacity type pressure sensor | |
| JPH0298147A (en) | Manufacture of semiconductor device | |
| JPS5924244A (en) | Field effect transistor type multi-ion sensor and preparation thereof | |
| JPS60146145A (en) | Oxygen electrode | |
| JPH04118979A (en) | Magnetic sensor and manufacture thereof | |
| JPS6325542A (en) | Insulated gate field-effect type moisture sensitive element | |
| KR100207653B1 (en) | Pyroelectric infrared sensor and fabricating method of the same | |
| KR900005849A (en) | Transparent electrode of EL display device and manufacturing method thereof | |
| KR970011843A (en) | Gas sensor element | |
| JPS62221119A (en) | Formation of through-hole | |
| KR880014652A (en) | Manufacturing Method of Semiconductor Device | |
| JPH0287585A (en) | Manufacture of ferromagnetic magnetoresistance element | |
| JPH02187081A (en) | Thin film thermocouple | |
| KR930005281A (en) | Method for manufacturing optical waveguide which prevents surface leach of lithium oxide during thermal diffusion | |
| JPH02285659A (en) | Semiconductor device | |
| KR970048717A (en) | Assembly method of upper and lower boards of liquid crystal display | |
| JPH02115855A (en) | Production of semiconductor device | |
| JPS62198145A (en) | Hybrid integrated circuit | |
| JPS589340A (en) | Manufacture of two-level crossing electrode | |
| JPS61198051A (en) | Formation of electrode for semiconductor ion sensor |