JPS63208728A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPS63208728A JPS63208728A JP62041662A JP4166287A JPS63208728A JP S63208728 A JPS63208728 A JP S63208728A JP 62041662 A JP62041662 A JP 62041662A JP 4166287 A JP4166287 A JP 4166287A JP S63208728 A JPS63208728 A JP S63208728A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- infrared detector
- light
- thin film
- nontransmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 claims description 17
- 230000003595 spectral effect Effects 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、冷却型赤外検出器固有の迷光を効果的に抑
圧できるようにし之赤外線検出器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an infrared detector that can effectively suppress stray light inherent in a cooled infrared detector.
赤外検出器を用い几撮像装置０等においては、所要な赤
外波長域の赤外光のみを効果的に透過し、他の波長域の
光を透過させない目的で。In an imaging device 0 or the like using an infrared detector, the purpose is to effectively transmit only infrared light in a required infrared wavelength range and not transmit light in other wavelength ranges.
波長選択フィルタとして干渉フィルタを用いる場合が多
い。ところで、使用光学系の対物口径が大きい場合には
、対物径にフィルタ径を合せようとすると、干渉フィル
タが高価になるので、一般には、大口径光学系において
は、光学系と、赤外検出素子との間の光路中に干渉フィ
ルタが設置される。An interference filter is often used as a wavelength selection filter. By the way, if the objective aperture of the optical system used is large, trying to match the filter diameter to the objective diameter will make the interference filter expensive. An interference filter is installed in the optical path between the elements.
第３図は、従来の赤外検出器の構成の１例を示す図であ
って、（１）は赤外検出素子、（２）は真空デユワ内部
、（３）はインナウオール、（４）は赤外検出素子取付
面、（５）はアウタウオール、（６）はアルミニウム蒸
着面、（７）はウィンド、（８）は干渉フィルタでろる
。FIG. 3 is a diagram showing an example of the configuration of a conventional infrared detector, in which (1) is an infrared detection element, (2) is inside a vacuum dewar, (3) is an inner wall, and (4) is an infrared detection element. (5) is the infrared detection element mounting surface, (5) is the outer all, (6) is the aluminum vapor deposited surface, (7) is the window, and (8) is the interference filter.
第３図において、赤外検出素子（１）は通常。In FIG. 3, the infrared detection element (1) is normal.
−２００°０支辺に冷却して使用する必要がある。It is necessary to use it after cooling it to -200°0 branch.
断熱効果ｔ％るために、赤外検出素子（１）は、真空デ
ユワ内部（２）の赤外検出素子取付面（４）に取付けら
れ、赤外検出素子取付面（４）の外側を９例えば液体チ
ッ素で冷却することにより、赤外検出素子取付面（４）
と赤外検出素子（１）とが冷却される０デユワは、第３
図に示すように、その他の構成品として、インナウオー
ル（３）、アウタウオール（６）、赤外透過窓であるウ
ィンド（７）から成っている。ここで、アウタウオール
（５）の内側には。In order to achieve a heat insulation effect, the infrared detection element (1) is attached to the infrared detection element mounting surface (4) inside the vacuum dewar (2), and the outside of the infrared detection element mounting surface (4) is For example, by cooling with liquid nitrogen, the infrared detection element mounting surface (4)
and the infrared detection element (1) are cooled by the third
As shown in the figure, other components include an inner all (3), an outer all (6), and a window (7) which is an infrared transmitting window. Here, inside the outer all (5).
外部からの不要な熱の流入を防ぐために、アルミニウム
蒸着面（６）が形成されている。An aluminum vapor-deposited surface (6) is formed to prevent unnecessary heat from flowing in from the outside.
また、＋フインド（７）の前方には、所要の波長域の赤
外光のみを有効に透過させるための干渉フィルタ（８）
が設置！！Ｌすれている。In addition, in front of the +find (7), there is an interference filter (8) that effectively transmits only infrared light in the required wavelength range.
is installed! ! L is passing.
第４図は、干渉フィルタ（８）の分光透過率、及び分光
反射率の１例を示す図であって、Ｊす上の波長域の赤外
光を有効に透過する場合を示し、また、干渉性であるが
故に、λｌ以下の波長域においては１反射率が大であり
、また、２１以上においても、残留反射があることを示
している〔発明が解決しようとする問題点〕
上述のように、干渉フィルタ（８）は、特に非透過域に
おいて反射が大であるため、光学系からの入射光に対し
ては鋭い波長選択性を示して良好な特性を示すが、真空
デユワ内部（２）の温度分布に起因する。内部からの赤
外輻射光に対しては、λｌ以下の波長の光を真空デユワ
内部（２）に再び反射することとなる。第３図の構造に
おいては、赤外検出（１）、及び赤外検出素子取付面（
４）は、−２００゛Ｏ近辺に冷却されてあり、一方、イ
ンナウオール（３）は常温付近の温度であって、この部
分からの強い赤外輻射光が、アルミニウム蒸着面（６）
で反射されて、干渉フィルタ（８）に入射し、λｌ以下
の成分が強く反射されることになる。FIG. 4 is a diagram showing an example of the spectral transmittance and spectral reflectance of the interference filter (8), showing a case where infrared light in the wavelength range above J is effectively transmitted; Because it is coherent, the 1 reflectance is large in the wavelength range of λl or less, and it also shows that there is residual reflection even in the wavelength range of 21 or more [Problem to be solved by the invention] The above-mentioned Since the interference filter (8) has a large amount of reflection, especially in the non-transmissive region, it exhibits sharp wavelength selectivity and good characteristics for the incident light from the optical system, but inside the vacuum dewar ( 2) This is due to the temperature distribution. Regarding infrared radiation from the inside, light with a wavelength of λl or less is reflected again into the vacuum dewar interior (2). In the structure shown in Figure 3, the infrared detection (1) and the infrared detection element mounting surface (
4) is cooled to around -200゛O, while the inner wall (3) is at a temperature around room temperature, and the strong infrared radiation from this part hits the aluminum vapor deposited surface (6).
, and enters the interference filter (8), where components below λl are strongly reflected.
従って、赤外検出素子（１）の受光面上には、信号であ
る光学系からの赤外光に加えて、真空デユワ内部（２）
からの赤外分布光が加算されることとなり、一般に後者
の分布は赤外検出素子（１）の受光面上において均一で
ないことから、シェーディングが発生する９等の問題点
があった。Therefore, on the light-receiving surface of the infrared detection element (1), in addition to the infrared light from the optical system that is the signal, the inside of the vacuum dewar (2)
Since the latter distribution is generally not uniform on the light-receiving surface of the infrared detection element (1), there is a problem such as 9 that shading occurs.
この発明は、かかる問題点を解決するためになされたも
のであり、波長選択フィルタにおける非透過光の反射を
なくすことにより、真空デーワ内部の温度分布が赤外検
出素子に及はす影＃を除去できる赤外検出器を得ること
を目的とする、
〔問題点を解決するための手段〕
この発明に係る赤外検出器は波長選択フィルタとしてウ
ィンド（７）と同等の平行平面板の表面に、非透過域の
光を吸収する材料の薄膜を蒸着することにより形成した
。吸収型フィルタを用いたものでるる。This invention was made to solve this problem, and by eliminating the reflection of non-transmitted light in the wavelength selection filter, it reduces the influence of the temperature distribution inside the vacuum detector on the infrared detection element. [Means for solving the problem] The infrared detector according to the present invention aims to obtain an infrared detector that can remove infrared light. , by depositing a thin film of a material that absorbs light in non-transmissive regions. It uses an absorption type filter.
この発明においては、非透過域の光は吸収されるので、
真空デユワ内部が発する赤外光が赤外検出素子に向って
再び強く反射されることはなく、従って、従来のような
シェープイン乙等が生じない赤外検出器を実現すること
ができる。In this invention, since light in the non-transmissive region is absorbed,
Infrared light emitted from the inside of the vacuum dewar is not strongly reflected again toward the infrared detection element, and therefore an infrared detector that does not cause shape-in or the like as in the prior art can be realized.
第１図はこの発明の実施例の構成の１部を示す図でろっ
て、（９）は吸収型フィルタ、頭は平行平面板、０は吸
収薄膜、 （１２，（１３は反射防止膜である。FIG. 1 is a diagram showing a part of the configuration of an embodiment of the present invention, in which (9) is an absorption type filter, the head is a parallel flat plate, 0 is an absorption thin film, (12, (13 is an antireflection film) be.
第１図において、平行平面板ａａは第３図に示したウィ
ンド（７）と赤外的には同等の材料で形成されている。In FIG. 1, the parallel plane plate aa is made of the same material in infrared terms as the window (7) shown in FIG. 3.
吸収薄膜０は、λ１ 以預波長に対して実質的に非透過
な光学材料を真空蒸着９等の手段により形成したもので
あって、その膜厚は、非透過域の光に対する所要の減衰
量９等から決定される。The absorbing thin film 0 is formed of an optical material that is substantially non-transparent to the wavelength λ1 by vacuum deposition 9 or the like, and its thickness is determined by the required amount of attenuation for light in the non-transmissive region. Determined from 9th grade.
例えば８〜１４＃鴨帯を透過波長域とし、５ＪＩｆｉ以
下を有効に非透過域としたい場合には、１例として、ゲ
ルマニウム板を平行平面板αＧとし。For example, if you want to make the 8-14# duck band the transmission wavelength range and effectively make the 5JIfi or less the non-transmission range, for example, use the germanium plate as a parallel plane plate αG.
その上に、 Ｉｎ８ｂｖ等の薄膜を形成させる場合が
あげられる。A thin film of In8bv or the like may be formed thereon.
＄１図においては、さらに、吸収薄膜０．形成後の両面
における。不要な反射を防止するために９両面に反射防
止膜ｏ、 （１３が蒸着される。In the $1 figure, the absorption thin film 0. On both sides after formation. In order to prevent unnecessary reflections, anti-reflection films (13) are deposited on both sides of the 9 surfaces.
反射防止膜■、（１３は、１例として、 Ｚｎ８．等
の材料により、形成される。The anti-reflection film (13) is formed of a material such as Zn8., for example.
第２図は、このように形成された吸収型フィルタ（９）
の透過率、及び反射率の分光特性を示す図でろって、
Ｊ１以上の波長域において、有効な透過が侮られ、かつ
、従来のように、不要な反射が除去された特性が潜られ
ることを示しているう
〔発明の効果〕
このように、この発明によれば、吸収型フィルタを波長
選択フィルタとして用いるので、真空デユワ内部（２１
の温度分布に起因する赤外幅射光が従来のようにフィル
タ面に強く反射されることがなく、シェーディング、等
の問題が除去された赤外検出器を実現することができる
。Figure 2 shows an absorption filter (9) formed in this way.
This is a diagram showing the spectral characteristics of transmittance and reflectance of
This shows that in the wavelength range of J1 or above, effective transmission is neglected, and the characteristic that unnecessary reflections are eliminated as in the past is hidden. According to the above, since an absorption type filter is used as a wavelength selection filter, the inside of the vacuum dewar (21
It is possible to realize an infrared detector in which the infrared radiation beam caused by the temperature distribution is not strongly reflected on the filter surface as in the conventional case, and problems such as shading are eliminated.
７Ｊ＋１図はこの発明の１実施例の構成の１部を示す図
、第２図は吸収型フィルタの分光特性を示す図、第３図
は従来のこの棟装置の構成を示す図、第４図は、干渉フ
ィルタの分光特性を示す図である。図中（１）は赤外検
出素子、（２）は真空デユワ部、（７）はウィンド、（
９）は吸収型フィルタ、αＱは平行平面板、（６）は吸
収薄膜、 （＋３（１３は反射防止膜である。
なお１図中、同一あるいは相当する部分には、同一符号
が付して示しである。Figure 7J+1 is a diagram showing a part of the configuration of an embodiment of the present invention, Figure 2 is a diagram showing the spectral characteristics of an absorption filter, Figure 3 is a diagram showing the configuration of this conventional ridge device, and Figure 4. FIG. 2 is a diagram showing spectral characteristics of an interference filter. In the figure, (1) is the infrared detection element, (2) is the vacuum dewar section, (7) is the window, (
9) is an absorption filter, αQ is a parallel plane plate, (6) is an absorption thin film, (+3 (13 is an antireflection film), and the same or corresponding parts in Figure 1 are given the same reference numerals. This is an indication.
Claims (2)
に応じた電気信号を出力する赤外検出器において、赤外
透過窓を有する真空デュワ内に設置された赤外検出素子
と、前記赤外透過窓と結像光学系との間の光路中に設置
された、吸収型波長選択フィルタとを備えたことを特徴
とする、赤外検出器。(1) In an infrared detector that receives infrared light in a cooled state and outputs an electric signal according to its intensity, an infrared detection element installed in a vacuum dewar having an infrared transmission window; An infrared detector comprising: an absorption type wavelength selection filter installed in an optical path between the infrared transmission window and an imaging optical system.
に同等な分光透過特性を有する赤外光学材料の表面上に
、所要の非透過波長域に吸収域を有する材料の薄膜を形
成し、かつ２つの面の一方あるいは両方に反射防止膜を
施すことによに構成したことを特徴とする、特許請求範
囲第（１）項記載の赤外検出器。(2) Form an absorptive wavelength selection filter by forming a thin film of a material that has an absorption range in the required non-transmission wavelength range on the surface of an infrared optical material that has spectral transmission characteristics that are substantially equivalent to the infrared transmission window. An infrared detector according to claim 1, characterized in that the infrared detector is constructed by applying an antireflection film to one or both of the two surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62041662A JPS63208728A (en) | 1987-02-25 | 1987-02-25 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62041662A JPS63208728A (en) | 1987-02-25 | 1987-02-25 | Infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63208728A true JPS63208728A (en) | 1988-08-30 |
Family
ID=12614593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62041662A Pending JPS63208728A (en) | 1987-02-25 | 1987-02-25 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63208728A (en) |
-
1987
- 1987-02-25 JP JP62041662A patent/JPS63208728A/en active Pending
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