JPS63204618A - Vapor phase epitaxy device - Google Patents
Vapor phase epitaxy deviceInfo
- Publication number
- JPS63204618A JPS63204618A JP3699187A JP3699187A JPS63204618A JP S63204618 A JPS63204618 A JP S63204618A JP 3699187 A JP3699187 A JP 3699187A JP 3699187 A JP3699187 A JP 3699187A JP S63204618 A JPS63204618 A JP S63204618A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- susceptor
- substrate mounting
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000927 vapour-phase epitaxy Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000006698 induction Effects 0.000 claims abstract description 10
- 238000009434 installation Methods 0.000 claims description 13
- 239000012808 vapor phase Substances 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 19
- 239000010439 graphite Substances 0.000 abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
高周波誘導加熱方式を用いた気相エピタキシャル成長装
置のサセプタの改良であって、このサセプタを形成する
グラファイトに於いて、基板の設置領域と、その該基板
設置領域の周囲の領域とではサセプタを構成するグラフ
ァイトの抵抗値を異ならせて形成することで、基板が全
面にわたって均一な温度で加熱されるようにした気相エ
ピタキシャル成長装置。[Detailed Description of the Invention] [Summary] This is an improvement of a susceptor for a vapor phase epitaxial growth apparatus using a high-frequency induction heating method, in which the graphite forming the susceptor has a substrate installation area and the substrate installation area. A vapor phase epitaxial growth system that heats the entire surface of the substrate at a uniform temperature by forming the graphite that makes up the susceptor with a different resistance value than the surrounding area.
本発明は気相エピタキシャル成長装置の改良に係り、特
に基板を設置して高周波誘導加熱するサセプタの改良に
関する。The present invention relates to an improvement in a vapor phase epitaxial growth apparatus, and more particularly to an improvement in a susceptor in which a substrate is placed and heated by high frequency induction.
赤外線検知素子の材料としては水銀・カドミウム・テル
ルの結晶が用いられており−１このような水銀・カドミ
ウム・テルルの結晶を薄層状態にかつ大面積に形成する
には気相エピタキシャル成長方法が採られている。Crystals of mercury, cadmium, and tellurium are used as materials for infrared sensing elements.1 Vapor-phase epitaxial growth is used to form mercury, cadmium, and tellurium crystals in a thin layer over a large area. It is being
このような気相エピタキシャル成長方法を用いて水銀・
カドミウム・テルルの結晶を基板上に形成する場合、第
３図に示すように、平板状で導入ガスの方向に対してテ
ーパを有するグラファイトよりなるサセプタ１の上にカ
ドミウムテルル（ＣｄＴｅ）の基板２を設置した状態で
、反応管３内に導入した後、反応管内部を排気する。Using this vapor phase epitaxial growth method, mercury and
When forming cadmium tellurium crystals on a substrate, as shown in FIG. is introduced into the reaction tube 3, and then the inside of the reaction tube is evacuated.
次いで反応管３内にキャリアガスとしての水素ガスと、
ジメチルカドミウムを担持した水素ガス、ジエチルテル
ルを担持した水素ガス、水銀のガスを反応ガスとして導
入するとともに、反応管３の周囲に設けた高周波加熱コ
イル４に高周波電圧を印加することで、サセプタ１を高
周波誘導加熱し、それによって基板２の温度を上昇させ
ると共に、基板２の周囲の反応管内部の温度を上昇させ
、この温度上昇によって反応管３内に導入された反応ガ
スを分解し、その分解した成分を基板上にエピタキシャ
ル成長させている。Next, hydrogen gas as a carrier gas is introduced into the reaction tube 3,
By introducing hydrogen gas supporting dimethyl cadmium, hydrogen gas supporting diethyl tellurium, and mercury gas as reaction gases, and applying a high frequency voltage to the high frequency heating coil 4 provided around the reaction tube 3, the susceptor 1 is heated. is heated by high frequency induction, thereby increasing the temperature of the substrate 2 and the temperature inside the reaction tube around the substrate 2. This temperature increase decomposes the reaction gas introduced into the reaction tube 3, and the reaction gas is decomposed. The decomposed components are epitaxially grown on the substrate.
ところが、このような高周波誘導加熱されたサセプタの
温度分布について調べると、第４図に示すように、基板
が設置されるでいる領域５Ａは、その周囲の領域５Ｂの
熱輻射の影響を受けて、周囲の領域５Ｂよりも加熱温度
が上昇する傾向がある。However, when we investigate the temperature distribution of such a susceptor heated by high-frequency induction, we find that the area 5A where the substrate is installed is affected by the thermal radiation of the surrounding area 5B, as shown in Figure 4. , the heating temperature tends to be higher than that in the surrounding area 5B.
上記の影響を受けることで、更に基板が設置されている
領域５Ａの中央部Ａと、その領域５Ａの周辺部Ｂでは８
００℃±３℃と、加熱温度が異なる状態にあり、そのた
め、基板が均一な温度に加熱されない欠点がある。Due to the above influence, the central part A of the area 5A where the board is installed and the peripheral part B of the area 5A are 8
The heating temperatures are different at 00° C.±3° C. Therefore, there is a drawback that the substrate is not heated to a uniform temperature.
本発明は上記した問題点を解決するもので、サセプタの
基板の設置されている領域と、その基板の設置領域の周
辺部の領域が異なった抵抗値を有する部材で形成するこ
とで、その異なった抵抗値を有する部材間では、その部
材間に誘導される高周波誘導電流が異なることで、各部
材間の加熱温度が異なる現象を利用して、基板が均一な
温度で加熱されるような気相エピタキシャル成長装置の
提供を目的とする。The present invention solves the above problems by forming the area where the substrate of the susceptor is installed and the area around the area where the substrate is installed from members having different resistance values. By utilizing the phenomenon that the heating temperature between each member differs due to the difference in the high-frequency induced current induced between the members having different resistance values, it is possible to heat the board at a uniform temperature. The purpose is to provide a phase epitaxial growth apparatus.
本発明の気相エピタキシャル成長装置は、反応管内に基
板を設置したサセプタを設置し、該反応管内に反応ガス
を導入し、前記反応管の周囲に設けた高周波コイルに高
周波電圧を印加して前記サセプタを高周波誘導加熱する
ことで、基板を加熱し、前記導入した反応ガスの反応に
より前記基板上にエピタキシャル結晶を形成する装置に
於いて、前記サセプタの基板が設置される領域と、該基
板の設置箇所の周囲の領域とが、それぞれ抵抗値が異な
った高周波誘導加熱部材にて形成されている。In the vapor phase epitaxial growth apparatus of the present invention, a susceptor with a substrate placed therein is installed in a reaction tube, a reaction gas is introduced into the reaction tube, and a high frequency voltage is applied to a high frequency coil provided around the reaction tube to transform the susceptor. In an apparatus for heating a substrate by high-frequency induction heating and forming an epitaxial crystal on the substrate by reaction of the introduced reaction gas, a region of the susceptor where the substrate is installed, and an area where the substrate is installed. The regions around the location are formed of high-frequency induction heating members having different resistance values.
本発明の気相エピタキシャル成長装置は、この装置に用
いるサセプタの基板を設置する領域と、その基板を設置
する領域の周囲の領域とを抵抗値を異ならせたグラファ
イトで形成し、この抵抗値の異なることで、各領域のグ
ラファイト板に誘導される高周波電力の値を異ならせ、
それによってサセプタの全領域が均一な温度で加熱され
るようにし、これによって基板が設置されるサセプタの
領域の温度が均一な温度となるようにし、それによって
基板の全領域が均一な温度で加熱されるようにする。In the vapor phase epitaxial growth apparatus of the present invention, the area where the substrate of the susceptor used in this apparatus is placed and the area surrounding the area where the substrate is placed are formed of graphite having different resistance values. By doing this, the value of high-frequency power induced in the graphite plate in each region is different,
This ensures that all areas of the susceptor are heated to a uniform temperature, thereby ensuring that the area of the susceptor on which the substrate is placed has a uniform temperature, thereby heating all areas of the substrate to a uniform temperature. to be done.
以下、図面を用いながら本発明の一実施例につき詳細に
説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の装置に用いるサセプタ１１の斜視図で
、第２図は第１図のｎ−ｎ ”線に沿った断面図である
。FIG. 1 is a perspective view of a susceptor 11 used in the apparatus of the present invention, and FIG. 2 is a sectional view taken along line nn'' in FIG. 1.
第１図および第２図に図示するように、本発明のサセプ
タ１１に於いて、基板を設置する領域１２を比抵抗が１
７００Ω−ロの円板状のグラファイト板１２で形成する
。As shown in FIGS. 1 and 2, in the susceptor 11 of the present invention, the area 12 where the substrate is placed has a specific resistance of 1.
It is formed from a disc-shaped graphite plate 12 of 700Ω-2.
またこの基板設置領域１２の周囲の基板設置周囲領域１
３を、比抵抗が９００Ω−ｃｍの平板状のグラファイト
板１３で形成する。Also, the board installation peripheral area 1 around this board installation area 12
3 is formed of a flat graphite plate 13 having a specific resistance of 900 Ω-cm.
このようなサセプタを形成するには、Ｓｉ原子を添加し
て形成した炭化珪素よりなり、比抵抗値が１７００Ω−
Ｇと高いグラファイトを、前記基板設置領域１２として
円板状に加工する。そしてそれを上記円板状のグラファ
イト板１２が挿入される凹部を有し、縦の寸法がｌ５、
横の寸法が１２、反応ガスの導入側の厚さがＪ、、反応
ガスの出口側の厚さが１４であり抵抗値が９００Ω−値
と前記した円板状グラファイト板１２より低い値の平板
状グラファイト板１３に挿入する。In order to form such a susceptor, it must be made of silicon carbide doped with Si atoms and have a specific resistance value of 1700Ω-
Graphite with a high G is processed into a disk shape as the substrate installation area 12. It has a recess into which the disc-shaped graphite plate 12 is inserted, and has a vertical dimension l5,
A flat plate with a horizontal dimension of 12, a thickness of J on the inlet side of the reaction gas, a thickness of 14 on the outlet side of the reaction gas, and a resistance value of 900Ω-value, which is lower than the disk-shaped graphite plate 12 described above. Insert it into the shaped graphite plate 13.
このように導入ガスの流れの方向によって平板状のグラ
ファイト板１３の厚さを変化させるのは、その上にエピ
タキシャル成長時に形成される境界層の厚さを均一に保
つためである。The reason why the thickness of the flat graphite plate 13 is changed depending on the direction of the flow of the introduced gas is to maintain a uniform thickness of the boundary layer formed thereon during epitaxial growth.
このグラファイト板１３は、基板設置領域となる円板状
グラファイト板１２が挿入される凹部を有しており、ま
た前記した円板状グラファイト板１２には基板が設置さ
れる窪み１４を予め設けて置く。This graphite plate 13 has a recess into which the disk-shaped graphite plate 12, which serves as a substrate installation area, is inserted, and the disk-shaped graphite plate 12 is previously provided with a recess 14 into which the substrate is installed. put.
このようにすれば、比抵抗値の低い基板設置周囲領域１
３では、比抵抗値の高い基板設置領域１２に比して高周
波電流の流れる量が多くなり、そのため基板設置周囲領
域１３の加熱による熱輻射の影響を受けた場合でも、基
板設置領域１２に流れる高周波電流の値が少ないため、
サセプタの全領域にわたって加熱温度が均一となる。In this way, the area around the board where the resistivity is low 1
3, the amount of high-frequency current flowing is larger than that in the board installation area 12 which has a high specific resistance value, so even if it is affected by thermal radiation due to heating of the board installation surrounding area 13, the high frequency current flows in the board installation area 12. Because the value of high frequency current is small,
The heating temperature becomes uniform over the entire area of the susceptor.
このようにして形成した本発明のサセプタに１２０ＫＨ
ｚの周波数で、１８０ｖの電圧で１５Ａの高周波電流で
誘導加熱すると、このサセプタの温度が上昇し、基板の
設置領域１１の全域内に於いて、８００°Ｃ±１℃の均
一な温度が得られた。The susceptor of the present invention formed in this way has 120KH.
When induction heating is performed with a high frequency current of 15 A at a voltage of 180 V at a frequency of z, the temperature of this susceptor increases, and a uniform temperature of 800° C. It was done.
以上述べたように本発明の気相エピタキシャル成長装置
によれば、基板の設置領域が均一な温度で加熱されるた
め、基板上に形成されるエピタキシャル結晶の厚さ、お
よび組成が均一なものが得られる。As described above, according to the vapor phase epitaxial growth apparatus of the present invention, the area where the substrate is placed is heated at a uniform temperature, so that the thickness and composition of the epitaxial crystal formed on the substrate can be uniform. It will be done.
以上述べたように、本発明の気相エピタキシャル成長装
置によれば、基板が均一な温度で加熱されるため、組成
および厚さが均一なエピタキシャル結晶が得られる効果
がある。As described above, according to the vapor phase epitaxial growth apparatus of the present invention, since the substrate is heated at a uniform temperature, an epitaxial crystal having a uniform composition and thickness can be obtained.
第１図は本発明の装置に用いるサセプタの斜視図、
第２図は第１図のｎ−ｎ”線に沿った断面図、第３図は
気相エピタキシャル装置を示す概略構成図、
第４図は従来の装置に用いるサセプタの平面図である。
図に於いて、
１１はサセプタ、１２は基板設置領域（円板状グラファ
イト板）、１３は基板設置周囲領域（平板状グラファイ
ト板）、１４は窪み、ｊ’ｌ 、’２，１２＋ ’４は
平板状グラファイトの厚さの寸法を示す。
半発朗−メ’１ｒ＝ｆＷ−・コサせアク−斜視図第１図
−ｔｒ図／１’ｌ −ＦｊＪ’＋＝；Ｉｔ フｒ＝ ｆ
ｆ１ｍ第２図FIG. 1 is a perspective view of a susceptor used in the device of the present invention, FIG. 2 is a sectional view taken along line nn” in FIG. 1, FIG. 3 is a schematic configuration diagram showing a vapor phase epitaxial device, and FIG. The figure is a plan view of a susceptor used in a conventional device. In the figure, 11 is a susceptor, 12 is a substrate installation area (disc-shaped graphite plate), 13 is a substrate installation surrounding area (flat graphite plate), and 14 is a depression, j'l, '2,12+'4 indicates the thickness of the tabular graphite. 'l −FjJ'+=;It fr=f
f1m figure 2
Claims (1)
）を設置し、該反応管（３）内に反応ガスを導入し、前
記反応管の周囲に設けた高周波コイル（４）に高周波電
圧を印加して前記サセプタ（１）を高周波誘導加熱する
ことで、基板（２）を加熱し、前記導入した反応ガスの
反応により前記基板（２）上にエピタキシャル結晶を形
成する装置に於いて、前記サセプタ（１１）の基板設置
領域（１２）と、該基板設置領域の周囲領域（１３）と
が、それぞれ抵抗値が異なった高周波誘導加熱部材にて
形成されていることを特徴とする気相エピタキシャル成
長装置。A susceptor (1) with a substrate (2) installed inside a reaction tube (3)
), introducing a reaction gas into the reaction tube (3), and applying a high frequency voltage to a high frequency coil (4) provided around the reaction tube to heat the susceptor (1) by high frequency induction. In the apparatus for heating the substrate (2) and forming an epitaxial crystal on the substrate (2) by reaction of the introduced reaction gas, the substrate installation area (12) of the susceptor (11) and the A vapor phase epitaxial growth apparatus characterized in that a peripheral region (13) of a substrate installation region is formed of high-frequency induction heating members each having a different resistance value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3699187A JPS63204618A (en) | 1987-02-19 | 1987-02-19 | Vapor phase epitaxy device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3699187A JPS63204618A (en) | 1987-02-19 | 1987-02-19 | Vapor phase epitaxy device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63204618A true JPS63204618A (en) | 1988-08-24 |
Family
ID=12485210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3699187A Pending JPS63204618A (en) | 1987-02-19 | 1987-02-19 | Vapor phase epitaxy device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63204618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273660A (en) * | 2006-03-31 | 2007-10-18 | Taiyo Nippon Sanso Corp | Vapor phase growth device |
-
1987
- 1987-02-19 JP JP3699187A patent/JPS63204618A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273660A (en) * | 2006-03-31 | 2007-10-18 | Taiyo Nippon Sanso Corp | Vapor phase growth device |
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