JPS6319825A - Etching for film containing semiconductor element - Google Patents
Etching for film containing semiconductor elementInfo
- Publication number
- JPS6319825A JPS6319825A JP16448286A JP16448286A JPS6319825A JP S6319825 A JPS6319825 A JP S6319825A JP 16448286 A JP16448286 A JP 16448286A JP 16448286 A JP16448286 A JP 16448286A JP S6319825 A JPS6319825 A JP S6319825A
- Authority
- JP
- Japan
- Prior art keywords
- alcohol
- substrate
- etching solution
- dust
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 60
- 239000000243 solution Substances 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 23
- 239000000428 dust Substances 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000005871 repellent Substances 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 235000019441 ethanol Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- LRDIEHDJWYRVPT-UHFFFAOYSA-N 4-amino-5-hydroxynaphthalene-1-sulfonic acid Chemical compound C1=CC(O)=C2C(N)=CC=C(S(O)(=O)=O)C2=C1 LRDIEHDJWYRVPT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical class Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
シリコン（Ｓｉ）基板上に形成した二酸化シリコン（Ｓ
ｉＯ２）膜のような半導体元素を含む被膜のエツチング
液として弗化水素酸の水溶液にアルコールを混合させた
エツチング液を用いることで、５ｉ０２膜が除去された
Ｓｉ基板の表面が親水性になるようにして、エツチング
液等に含まれるゴミが基板表面に付着しないようにする
。[Detailed Description of the Invention] [Summary] Silicon dioxide (S) formed on a silicon (Si) substrate
By using an etching solution in which alcohol is mixed with an aqueous solution of hydrofluoric acid as an etching solution for a film containing a semiconductor element such as an iO2) film, the surface of the Si substrate from which the 5i02 film has been removed becomes hydrophilic. to prevent dust contained in the etching solution from adhering to the substrate surface.
本発明は５ｉｏ２膜等の半導体元素を含む被膜のエツチ
ング液に係り、特に５ｉｏ２膜をエツチングしたＳｉ基
板の表面にゴミが付着しないようにしたエツチング液に
関する。The present invention relates to an etching solution for a film containing a semiconductor element such as a 5io2 film, and more particularly to an etching solution that prevents dust from adhering to the surface of a Si substrate on which a 5io2 film has been etched.
Ｓｉ基板上に形成した５ｉ０２膜をエツチングするのに
、最近はドライエツチング法が用いられている。Recently, a dry etching method has been used to etch a 5i02 film formed on a Si substrate.
然し、ドライエツチング法は基板が損傷を受ける等の問
題があり、手軽な弗化水素酸の水溶液を用いたエツチン
グ液が用いられている。However, the dry etching method has problems such as damage to the substrate, so a convenient etching solution using an aqueous solution of hydrofluoric acid is used.
ところでこのような弗化水素酸の水溶液を用いてエツチ
ングしたＳｉ基板の表面は、撥水性であり、その撥水性
となった基板表面はエツチング液中のゴミを吸着する傾
向があり、また−旦ゴミを吸着すると、吸着したゴミを
除去し難い。By the way, the surface of a Si substrate etched using such an aqueous solution of hydrofluoric acid is water-repellent, and the water-repellent surface tends to adsorb dust in the etching solution. Once dust is adsorbed, it is difficult to remove the adsorbed dust.
そのため、この吸着されたゴミによってパターン不良を
生じたり、５ｔｏ２１９のピンホールを発生させたりす
る問題が生じる。Therefore, this attracted dust causes problems such as pattern defects and 5 to 219 pinholes.
従来、このような問題点を除去する方法として弗化水素
酸の水溶液に界面活性剤を混合し、５ｉ０２１費が除去
されたＳｉ基板表面を親水性にしてゴミの付着を防止す
る方法があった。Conventionally, as a method to eliminate such problems, there was a method of mixing a surfactant with an aqueous solution of hydrofluoric acid to make the surface of the Si substrate from which the 5i021 was removed hydrophilic, thereby preventing the adhesion of dust. .
然し、このような従来のエツチング液では、界面活性剤
のエツチング液に対する溶解炭に限界があるため、ｓ；
ｏ２Ｉｇが除去された基板表面の親水化には限界があり
、また半導体素子形成に不都合な不純物も含まれる可能
性があり好ましくない。However, in such conventional etching solutions, there is a limit to the amount of carbon dissolved in the surfactant in the etching solution;
There is a limit to the hydrophilization of the substrate surface from which o2Ig has been removed, and impurities that are inconvenient for semiconductor device formation may also be included, which is not preferable.
本発明は上記した問題点を除去し、５ｉＯ２１１５！が
除去された基板表面が親水性になるようにし、ゴミの付
着が防止できるｓ＋ｏ２１９のような半導体元素を含む
被ＩＩＩの新規なエツチング液の提供を目的とする。The present invention eliminates the above-mentioned problems and 5iO2115! It is an object of the present invention to provide a novel etching solution containing a semiconductor element such as S+O219, which makes the surface of the substrate from which the oxide is removed hydrophilic and prevents the adhesion of dust.
本発明の半導体元素を含む被膜のエンチング液は、弗化
水素酸の水溶液にアルコールを混合させたことを特徴と
する。The etching solution for a film containing a semiconductor element according to the present invention is characterized in that it contains an aqueous solution of hydrofluoric acid mixed with alcohol.
Ｓｉ基板に形成された５ｔｏ２１Ｊをアルコールが含有
された弗化水素酸の水溶液にてエツチングすると、アル
コール中の治水性のアルキル基部分（−Ｒ）は、５ｔｏ
２１１１が除去された撥水性の基板表面に吸着され、そ
の結果、アルコールを構成する親水性のＯＨ基が基板表
面を覆う事となり、基板表面が親水性になってゴミの付
着が避けられるようになる。When 5to21J formed on a Si substrate is etched with an aqueous solution of hydrofluoric acid containing alcohol, the hydrophobic alkyl group moiety (-R) in the alcohol is etched into 5to21J formed on a Si substrate.
2111 is adsorbed on the surface of the water-repellent substrate from which it was removed, and as a result, the hydrophilic OH groups that constitute the alcohol cover the substrate surface, making the substrate surface hydrophilic and preventing dust from adhering to it. Become.
（実施例）
以下、図面を用いて本発明の一実施例につき詳細に説明
する。(Example) Hereinafter, one example of the present invention will be described in detail using the drawings.
第１図に示すように、エツチング容器１内に水と弗化水
Ｓ酸が容量比で（１００：１０）に混合された溶液内に
イソプロピルアルコール（Ｃ３ＨＯＨ）ヲ混合比を変え
た状態で混合させてエツチング液２を形成する。As shown in Fig. 1, isopropyl alcohol (C3HOH) is mixed in an etching container 1 in a solution in which water and fluorinated water S acid are mixed at a volume ratio of (100:10) at different mixing ratios. The etching solution 2 is formed by etching.
このエツチング液２内に直径が４インチの５ｔＯ２膜が
被着形成されたＳｉウェハ３を浸漬させ、５ｉ０２膜を
エツチングした後、エツチング液２より垂直方向に引き
上げる。そしてこのウェハを垂直方向に引き上げた後、
ウェハの表面よりエツチング液が下方に落下して、表面
にエツチング液が残留しない状態になる迄の時間を測定
した状態を第２図に示す。A Si wafer 3 on which a 5tO2 film having a diameter of 4 inches has been deposited is immersed in this etching solution 2, and after the 5I02 film is etched, it is lifted out of the etching solution 2 in a vertical direction. After pulling this wafer vertically,
FIG. 2 shows the measurement of the time required for the etching solution to fall downward from the surface of the wafer until no etching solution remains on the surface.
第２図で縦軸は、ウェハをエツチング液より引き上げて
、ウェハの表面よりエツチング液が完全に下方に落下す
る迄の時間（秒）を示し、横軸はエツチング液に占める
イソプロピルアルコールの混合割合を容９比で示した値
で、イソプロピルアルコールの混合容量をＡとした時、
エツチング液ハ水：弗化水ａ酸：イソブロビルアルコー
ルが、（１００：１０： ＾）となるようにし、このＡ
の値を横軸に示す。In Figure 2, the vertical axis indicates the time (in seconds) from when the wafer is lifted out of the etching solution until the etching solution completely falls below the wafer surface, and the horizontal axis indicates the mixing ratio of isopropyl alcohol in the etching solution. is the value expressed in volume 9 ratio, and when the mixing volume of isopropyl alcohol is A,
The etching solution should have a ratio of water: fluorinated hydrochloric acid: isobrobyl alcohol (100:10: ^), and this A
The value of is shown on the horizontal axis.
第２図に示すように、＾が０の時、即ちイソプロピルア
ルコールを添加しない時、基板表面が撥水性である為、
約０．１ｓｅｃでエツチング液は下方に落下する。As shown in Figure 2, when ^ is 0, that is, when no isopropyl alcohol is added, the substrate surface is water repellent, so
The etching solution falls downward in about 0.1 sec.
またＡがｌＯの時、即ち水と弗化水素酸とイソプロピル
アルコールの混合液に於いてイソプロピルアルコールが
約８容量％の時には、このエツチング液の落下時間、即
ちエツチング液の水切れ時間は約４ ｓｅｃとなる。When A is 1O, that is, when isopropyl alcohol is about 8% by volume in a mixed solution of water, hydrofluoric acid, and isopropyl alcohol, the falling time of the etching solution, that is, the time for the etching solution to drain is about 4 seconds. becomes.
またＡが２５の時、即ち水と弗化水素酸とイソプロピル
アルコールの混合液に於いて、卯ちイソプロピルアルコ
ールが約１８．５容量％の時には、このエツチング液の
水切れ時間時間は１２ｓｅｃとなる。Further, when A is 25, that is, when isopropyl alcohol is about 18.5% by volume in a mixed solution of water, hydrofluoric acid, and isopropyl alcohol, the draining time of this etching solution is 12 seconds.
またＡが５０の時、即ち水と弗化水素酸とイソプロピル
アルコールの混合液に於いて、イソプロピルアルコール
が約３１容量％の時には、このエッチンダ液の水切れ時
間は３５ｓｅｃとなる。Further, when A is 50, that is, when isopropyl alcohol is about 31% by volume in a mixed solution of water, hydrofluoric acid, and isopropyl alcohol, the draining time of this etching solution is 35 seconds.
このように水と弗化水素酸が容量比で（１００：１０）
の混合液に対しイソプロピルアルコールの混合割合を増
大させるにつれてエツチング液の水切れ時間は長くなる
。In this way, the volume ratio of water and hydrofluoric acid is (100:10).
As the mixing ratio of isopropyl alcohol to the mixed solution increases, the draining time of the etching solution becomes longer.
このことはイソプロピルアルコールの混合割合が大きく
なるに従って、基板表面が親水化する事を示している。This shows that as the mixing ratio of isopropyl alcohol increases, the substrate surface becomes more hydrophilic.
また本発明者等は、上記の親水性化によって、ゴミの付
着特性がいかに変化するかを、エッチしたウェハ上にレ
ーザ光を照射し、そのウェハの表面より乱反射する乱反
射光を測定する方法を用いて測定した。In addition, the present inventors have developed a method of irradiating a laser beam onto an etched wafer and measuring the diffusely reflected light reflected from the surface of the wafer to determine how the adhesion characteristics of dust change due to the above-mentioned hydrophilization. It was measured using
その結果を第３図に示す。図の横軸はエツチング液に対
するアルコールの含有割合を示し、縮軸はエッチしたウ
ェハ上に於いて、直径が０．３ μｍ以上のゴミの数量
を示す。The results are shown in FIG. The horizontal axis of the figure shows the content ratio of alcohol to the etching solution, and the reduced axis shows the number of particles with a diameter of 0.3 μm or more on the etched wafer.
図示するように、への値が０の時、即ちイソプロピルア
ルコールを添加しない時、直径０．３μｍ以上のゴミが
、ウェハー枚当たりに対してｌｏｏ〜２００個付着した
。As shown in the figure, when the value of isopropyl alcohol was 0, that is, when no isopropyl alcohol was added, ~200 pieces of dust with a diameter of 0.3 μm or more were attached per wafer.
これに対して前記したへの値が大きくなるにつれ、即ち
イソプロピルアルコールの４度が高くなるのに従って、
付着するゴミの量が減少している。On the other hand, as the above-mentioned value increases, that is, as the 4 degrees of isopropyl alcohol increases,
The amount of adhering dust is decreasing.
同図より水二弗化水素酸：イソプ口ピルアルコール＝Ｘ
：Ｙ：Ａとし、ＸとＹとへの値が第（１）式に示される
ような関係を有する時に、ウェハの表面のゴミの付着防
止の効果があることが判る。From the same figure, water dihydrofluoric acid: isopyl alcohol = X
:Y:A, and it can be seen that when the values of X and Y have a relationship as shown in equation (1), there is an effect of preventing dust from adhering to the surface of the wafer.
０．１ ≦Ａ／ （Ｘ＋Ｙ＋Ａ）＜ １・・・・・・ｉ
ｌｌ尚、ＸおよびＹの値は、被膜のエツチングする際の
要求されるエツチング速度に応じて適宜設定すると良い
。0.1 ≦A/ (X+Y+A)< 1...i
Note that the values of X and Y may be set appropriately depending on the required etching speed when etching the film.
尚、本実施例ではエツチング液に混合するアルコールを
イソプロピルアルコールとしたが、その他メチルアルコ
ール、あるいはエチルアルコール等の等のＯＨ基を１個
含有する１価アルコールや、エチレングリコールのよう
なＯＨ基を２個含有する２価アルコールにも適用できる
。In this example, isopropyl alcohol was used as the alcohol to be mixed in the etching solution, but monohydric alcohols containing one OH group such as methyl alcohol or ethyl alcohol, or OH groups such as ethylene glycol may also be used. It can also be applied to dihydric alcohols containing two.
また本実施例では、５ｉｏ２１１Ｑをエッチする場合に
例を用いて述べたが、本発明の方法は弗化水素酸でエッ
チされる半導体元素を含む被膜、例えば燐珪酸ガラス（
ＰＳＧ）膜、硼珪酸ガラス（ＢＳＧ）膜、或いは窒化５
ｉｌｌに対しても適用可能である。Further, in this embodiment, the case where 5io211Q is etched was described as an example, but the method of the present invention is also applicable to a film containing a semiconductor element that is etched with hydrofluoric acid, such as phosphosilicate glass (
PSG) film, borosilicate glass (BSG) film, or nitride 5
It is also applicable to ill.
以上述べたように、本発明のエツチング液によれば、５
ｉＯ２膜がエッチされたＳｉ基板表面にゴミが付着しな
いので、パターン不良の発生率の低下や、５ｉ０２膜の
ピンホールの発生防止ができる効果があり、本発明の方
法を用いれば、高信頼度の半導体装置が得られる効果が
ある。As described above, according to the etching solution of the present invention, 5
Since dust does not adhere to the surface of the Si substrate on which the iO2 film is etched, it has the effect of reducing the incidence of pattern defects and preventing the occurrence of pinholes in the 5i02 film. This has the advantage that a semiconductor device of 100% can be obtained.
第１図は本発明のエツチング液の試験状態の説明図、
第２図はイソプロピルアルコールの混合比とウェハーの
表面の水切れ時間の関係図、
第３図はエツチング液に於けるイソプロピルアルコール
の混合比と、付着ゴミ量との関係図である。
図に於いて
１は容器、２はエツチング液、３はＳｉウェハを１８月
の工・ソかフ゛ン矩ｆ）ｐ％龜孕肛甘せの乱費、日月Ｃ
〕第１フ
イソプロＣルアルコールの１金員づ計（Ｇｔｚ）水硬ハ
ヒ２に系〜１′イソブｂＩしフルコづしく＋ｏｏ：＋ｏ
：Ａ）
イソブ餌りレアルク−２しの礪イｈとヒウエハー１ｄシ
の水切れδ醒」のＩＸ’Ｋｒ−１１Ｅｆｆｉイゾ１ｂヒ
うレアｊしコールの４縛（８％と）（ＨｚＯ： ＨＦ：
ＩＰＡ＝１００：１０’Ａ）イソτ０ピルアルコール０
宅葎動尤ｙウェハ上ｎイ丁看ゴミ量とメ）７￥１（系図
第３図Fig. 1 is an explanatory diagram of the test conditions of the etching solution of the present invention, Fig. 2 is a diagram showing the relationship between the mixing ratio of isopropyl alcohol and the water draining time on the wafer surface, and Fig. 3 is a diagram showing the mixing ratio of isopropyl alcohol in the etching solution. and the amount of attached dust. In the figure, 1 is the container, 2 is the etching solution, and 3 is the Si wafer.
] 1 tbsp of 1st Fisoprol alcohol (Gtz) Hydraulic Hahhi 2 system ~ 1' Isobu bI and Furuco +oo: +o
:A) 4 bound (with 8%) of Isobu Bairi Realk-2 and 1d water draining of Hiwafer 1d (HzO: HF:
IPA=100:10'A) isoτ0 pyl alcohol 0
The amount of dust on the wafer and the amount of dust on the wafer) 7 yen 1 (Figure 3 of the family tree)
Claims (2)
とを特徴とする半導体元素を含む被膜のエッチング液。(1) An etching solution for a film containing a semiconductor element, which is prepared by mixing an aqueous solution of hydrofluoric acid with alcohol.
ルアルコールよりなる混合液であり、かつ前記水と弗化
水素酸とイソプロピルアルコールの混合割合を容量比で
（Ｘ：Ｙ：Ａ）とした時、Ａの値が０．１≦Ａ／（Ｘ＋
Ｙ＋Ａ）＜１の範囲であることを特徴とする特許請求の
範囲第１項に記載の半導体元素を含む被膜のエッチング
液。(2) The etching solution is a mixture of water, hydrofluoric acid, and isopropyl alcohol, and the mixing ratio of the water, hydrofluoric acid, and isopropyl alcohol is (X:Y:A) by volume. When the value of A is 0.1≦A/(X+
The etching solution for a film containing a semiconductor element according to claim 1, characterized in that Y+A)<1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16448286A JPS6319825A (en) | 1986-07-11 | 1986-07-11 | Etching for film containing semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16448286A JPS6319825A (en) | 1986-07-11 | 1986-07-11 | Etching for film containing semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6319825A true JPS6319825A (en) | 1988-01-27 |
Family
ID=15794009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16448286A Pending JPS6319825A (en) | 1986-07-11 | 1986-07-11 | Etching for film containing semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319825A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03204932A (en) * | 1989-07-26 | 1991-09-06 | Dainippon Screen Mfg Co Ltd | Removal of coating film on silicon layer and selective removal of silicon natural oxide film |
| US5700348A (en) * | 1993-12-15 | 1997-12-23 | Nec Corporation | Method of polishing semiconductor substrate |
-
1986
- 1986-07-11 JP JP16448286A patent/JPS6319825A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03204932A (en) * | 1989-07-26 | 1991-09-06 | Dainippon Screen Mfg Co Ltd | Removal of coating film on silicon layer and selective removal of silicon natural oxide film |
| US5700348A (en) * | 1993-12-15 | 1997-12-23 | Nec Corporation | Method of polishing semiconductor substrate |
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