JPS63195261A - Production of lubricative film of fluorocarbon polymer - Google Patents
Production of lubricative film of fluorocarbon polymerInfo
- Publication number
- JPS63195261A JPS63195261A JP2636487A JP2636487A JPS63195261A JP S63195261 A JPS63195261 A JP S63195261A JP 2636487 A JP2636487 A JP 2636487A JP 2636487 A JP2636487 A JP 2636487A JP S63195261 A JPS63195261 A JP S63195261A
- Authority
- JP
- Japan
- Prior art keywords
- film
- fluorocarbon
- gas
- plasma
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002313 fluoropolymer Polymers 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004811 fluoropolymer Substances 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 23
- 230000001050 lubricating effect Effects 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 13
- 239000000126 substance Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 12
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000314 lubricant Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- PDPWTGAGBGEUJL-UHFFFAOYSA-N (8-methyl-8-azabicyclo[3.2.1]octan-3-yl) 3-(4-acetyloxyphenyl)-2-phenylpropanoate;hydrochloride Chemical compound Cl.CN1C(C2)CCC1CC2OC(=O)C(C=1C=CC=CC=1)CC1=CC=C(OC(C)=O)C=C1 PDPWTGAGBGEUJL-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical group FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- LTVOKYUPTHZZQH-UHFFFAOYSA-N difluoromethane Chemical group F[C]F LTVOKYUPTHZZQH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、大気中において長寿命、又は低摩擦係数を示
す優れた潤滑特性と耐薬品性を有するフッ化炭素系高分
子潤滑保護膜の製造方法に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention provides a fluorocarbon polymer lubricating protective film that has long life in the atmosphere and has excellent lubricating properties and chemical resistance, exhibiting a low coefficient of friction. Regarding the manufacturing method.
フッ化炭素系高分子膜を作成する方法としては、フッ化
炭素系モノマーガスをプラズマ中で重合させるプラズマ
ＣＶＤ法と、フルオロポリマーを原料とするスパッタ蒸
着法がある。Methods for creating a fluorocarbon polymer film include a plasma CVD method in which a fluorocarbon monomer gas is polymerized in plasma, and a sputter deposition method using a fluoropolymer as a raw material.
プラズマＣＶＤ法については、モノマーガス１に流しな
がら膜形成を行うため、ガス流量！！＃整が困難でＴｏ
す、更に排気ガス量が多いため、この処理が問題になっ
てくる。次に膜を形成する基板に関しては、成膜するた
めに加熱する必要がある。このために基板材料の変質、
物性の変化などの恐れがあシ、耐熱性の材料全基板に用
いなければならない。更に成膜した膜と基板との付着性
という点では、成膜プロセス上、基板表面上に膜が成長
する過程をとるため数ｅＶの運動エネルギーでもって基
板上に膜形成粒子が堆積して成膜が行われるスパッタ蒸
着法に比べて劣るものである。Regarding the plasma CVD method, film formation is performed while flowing monomer gas 1, so the gas flow rate! ! #It's difficult to adjust
Furthermore, since the amount of exhaust gas is large, this treatment becomes a problem. Next, the substrate on which the film is to be formed needs to be heated in order to form the film. For this reason, changes in the substrate material,
There is a risk of changes in physical properties, so heat-resistant materials must be used for all substrates. Furthermore, in terms of adhesion between the deposited film and the substrate, the film formation process involves a process in which the film grows on the substrate surface, so the film-forming particles are deposited on the substrate with a kinetic energy of several eV. It is inferior to the sputter deposition method by which the film is formed.
そして、フッ化炭素系七ツマ−からプラズマＣＶＤ法で
得られた高分子膜について膜の構造解析に興味の中心が
あ夛、本発明で問題としている１１！滑性という点に関
しては研究が進んでいない。There is a lot of interest in the structural analysis of polymer films obtained from fluorocarbon-based polymers by plasma CVD, which is the subject of the present invention. Research regarding lubricity has not progressed.
次にスパッタ蒸着法については、ターゲット（原料）に
ポリテトラフルオロエチレン（ＰＴＦＥ ）を、プラズ
マガスとしてアルゴンを使用した組合せに対する研究の
み進んでおシ、他のフルオロポリマーやプラズマガスを
用いた系はほとんど取扱われていない。従来のＰＴＦＥ
／アルゴンの系で得られたスパッタ膜の周揺動下におけ
る摩擦特性を第３図及び第４図に示す。すなわち第３図
は高周波スパッタ法で得られた各種高分子膜の潤滑機能
を失うまでの周揺動回数（縦軸）を示したグラフ、第４
図は高周波スパッタ法で得られた各株高分子膜の摩擦係
数（縦軸）を示したグラフである。Next, regarding the sputter deposition method, research is progressing only on combinations using polytetrafluoroethylene (PTFE) as the target (raw material) and argon as the plasma gas, but systems using other fluoropolymers or plasma gases are progressing. It is hardly handled. Conventional PTFE
The friction characteristics of the sputtered film obtained in the /argon system under circumferential oscillation are shown in FIGS. 3 and 4. In other words, Figure 3 is a graph showing the number of rotations (vertical axis) until the lubricating function of various polymer films obtained by high-frequency sputtering is lost.
The figure is a graph showing the friction coefficient (vertical axis) of each polymer film obtained by high-frequency sputtering.
第５図及び第４図の従来例にみるとシシ、従来品は低揺
動回数時において摩擦係数が大きく、またその値もばら
つきがあり不安定な特性を示している。これは、スパッ
タ膜の分子構造が母材より変化しているため潤滑性が低
下したことによるものである。Looking at the conventional examples shown in FIGS. 5 and 4, the conventional product has a large friction coefficient when the number of oscillations is low, and its value also varies and exhibits unstable characteristics. This is because the molecular structure of the sputtered film is different from that of the base material, resulting in a decrease in lubricity.
本発明の目的は、フッ化炭素糸高分子膜の固体潤滑性を
改善し、長寿命でありまた摩擦力の不安定特性を解決し
たフッ化炭素系高分子潤滑膜の製造方法を提供すること
にある。An object of the present invention is to provide a method for producing a fluorocarbon polymer lubricant film that improves the solid lubricity of the fluorocarbon thread polymer film, has a long life, and solves the unstable characteristics of frictional force. It is in.
本発明を概説すれば、本発明は７フ化炭素系高分子潤滑
膜の製造方法に関する発明で６って、フルオロポリマー
にフッ化炭素系ガス又は不活性ガスを混合したフッ化炭
素系ガスによりスパッタリング全行い、膜形成を行うこ
とを特徴とする。To summarize the present invention, the present invention relates to a method for producing a heptafluorocarbon polymer lubricating film. It is characterized by performing all sputtering and film formation.
本発明はフルオロポリマーに７フ化炭素系ガス又は不活
性ガスを混合したフッ化炭素糸ガス全プラズマ中で作用
させることによりスパッタリングを起し、高寿命や低摩
擦係数を示す優れた潤滑特性を有したフッ化炭素糸高分
子＠を形成することを最も主ｇ１な特徴とする。従来の
技術とはスパッタリングを起すターゲット材料、またエ
ツチングにのみ用いられていたフッ化炭素系ガスを、膜
形成に使用したことに大きな差がある。The present invention generates sputtering by causing fluoropolymer to act in a fluorocarbon thread gas plasma containing heptafluorocarbon gas or an inert gas, thereby achieving excellent lubrication properties that exhibit long life and low coefficient of friction. The most main feature of g1 is to form a fluorocarbon thread polymer @ with The major difference from the conventional technology is that a target material that causes sputtering and a fluorocarbon gas, which was used only for etching, are used for film formation.
本発明方法においては、高周波スパッタ法による膜形成
以外にも、イオンビームスパッタ法、高速原子線（ＦＡ
Ｂ）スパッタ法、バイアス高周波スパッタ法などが挙げ
られる。更に、不活性ガスを混合したフッ化炭素系ガス
をプラズマガスに使用した場合、その混合比を変えるこ
とにより薄膜中のフッ素と炭素の混合比及び膜堆積速度
ｔ−調整することが可能である０
〔実施例〕
以下、本発明を実施例により更に具体的に説明するが、
本発明はこれら実施例に限定されない０
実施例１
第１図に本発明に係るフッ化炭素系高分子膜を形成する
方法の１例として、高周波スパッタ法に依る場合の装置
例の概略図金示す。第１図において、符号１は真空容器
、２は基板ホルダー、５は基板、４はターゲット、５は
シャッター、６は高周波電極、７はマツチングボックス
、８は高周波電源、？は真空排気系、１０はガス導入系
、１１はプラズマガスボンベ、１２はヒーターである。In the method of the present invention, in addition to film formation by high frequency sputtering, ion beam sputtering, fast atomic beam (FA)
B) Sputtering method, bias high frequency sputtering method, etc. can be mentioned. Furthermore, when a fluorocarbon gas mixed with an inert gas is used as a plasma gas, it is possible to adjust the mixing ratio of fluorine and carbon in the thin film and the film deposition rate t by changing the mixing ratio. 0 [Example] Hereinafter, the present invention will be explained in more detail with reference to Examples.
The present invention is not limited to these embodiments.Example 1 Fig. 1 is a schematic diagram of an example of an apparatus in which high-frequency sputtering is used as an example of a method for forming a fluorocarbon polymer film according to the present invention. show. In FIG. 1, reference numeral 1 is a vacuum container, 2 is a substrate holder, 5 is a substrate, 4 is a target, 5 is a shutter, 6 is a high frequency electrode, 7 is a matching box, 8 is a high frequency power source, ? 1 is a vacuum exhaust system, 10 is a gas introduction system, 11 is a plasma gas cylinder, and 12 is a heater.
真空容器１内の基板ホルダー２に基板（熱処・環５ＵＢ
−４４０Ｇ、シリコンウェハ）ｓｔ、更にターゲット４
をセットする。ターゲットには、テトラフルオロエチレ
ン−エチレン共重合体（ＥＴＦＩ！ｉ ） 、ポリテト
ラフルオロエチレン（ＰＴＦＫ ） ｌ用いた例を示す
。Place the substrate (heat treatment/ring 5UB) in the substrate holder 2 inside the vacuum container 1.
-440G, silicon wafer) st, further target 4
Set. Examples are shown in which tetrafluoroethylene-ethylene copolymer (ETFI!i) and polytetrafluoroethylene (PTFK) are used as targets.
真空排気系９によシ１０−・Ｔｏｒｒ程度の真空全書た
後、ガス導入系１０よシフレオン（ＣＦ４）ガスを導入
し、ガス圧を設定する。そこに高周波電源８によシ高周
波電圧を印加しプラズマが安定に発生するようにメイン
バルブ（図示せず）で圧力を調整する。マツチングボッ
クス７中のコンデンサーにより投入電力を設定し、メイ
ンバルブで容器１内のガス圧ｔ−ｖＮ整し、ターゲット
表面のスパッタクリーニングを行う。その後シャッター
５を開き、基板への膜形成を所定の時間行う。After creating a vacuum of approximately 10 Torr in the evacuation system 9, Schifreon (CF4) gas is introduced into the gas introduction system 10, and the gas pressure is set. A high frequency voltage is applied thereto by a high frequency power source 8, and the pressure is adjusted using a main valve (not shown) so that plasma is stably generated. The input power is set by the capacitor in the matching box 7, the gas pressure t-vN in the container 1 is adjusted by the main valve, and the sputter cleaning of the target surface is performed. Thereafter, the shutter 5 is opened and film formation on the substrate is performed for a predetermined period of time.
以上の方法で得られたスパッタ膜についてＸ線元電子分
元法（ｘｐｓ）による分析を行い、Ｃ１８領域について
得られた結果を第２図に示す。すなわち第２図は本発明
による高周波スパッタでターゲットにＰＴＦＥ、プラズ
マガスにフレオンを用いて得られた膜のｘＰＳスペクト
ル図であり、横軸は結合エネルギー（ｅｖ）、縦軸は相
対強度を示す。The sputtered film obtained by the above method was analyzed by X-ray electron spectroscopy (XPS), and the results obtained for the C18 region are shown in FIG. That is, FIG. 2 is an xPS spectrum diagram of a film obtained by high-frequency sputtering according to the present invention using PTFE as a target and Freon as a plasma gas, where the horizontal axis shows binding energy (ev) and the vertical axis shows relative intensity.
これよ５ Ｐ’Ｉ’ＦＥ ＠Ｈ１フフ化炭素の領域に大
きなピークを有しておシ、２フツ化炭素、３フツ化炭素
の領域に小さなピークが見られる。１７フ化炭素は、赤
外線分光法による分析結果をも考慮して、枝分れしたＳ
Ｐｌ炭素及び不飽和結合をつくるＳＰ！炭素によるもの
と推定される。This 5 P'I'FE @H1 has a large peak in the carbon fluoride region, and small peaks in the carbon difluoride and carbon trifluoride regions. Considering the analysis results by infrared spectroscopy, carbon 17 fluoride is a branched S
SP to create Pl carbon and unsaturated bonds! It is presumed that this is due to carbon.
従来のＰＴＦＥ／Ａｒ糸の膜については、よシ低エネル
ギー側にピークが見られ、これは酸素と結合した炭素に
よるものであることを赤外線分光法よシ確認している。Regarding the conventional PTFE/Ar yarn film, a peak is seen on the low energy side, and it has been confirmed by infrared spectroscopy that this is due to carbon bonded to oxygen.
本発明に係るフッ化炭素系高分子膜の場合、潤滑性の原
因となる低表面エネルギー金かもし出すＣ−Ｆ結合を有
する炭素のみから膜が構成されているため優れた潤滑性
を示すものと推定される。実際、試料を速度３Ｈｚ、半
径２０ｍ、揺動角６０°で周揺動させ、これに球王子’
ｉｉ−４，９Ｎで押しつけ摩擦させた時の試験結果を第
５図及び第４図に示す。これよりＥＴＦＩＩＩ： ｆ：
ターゲットに用いて得られ丸腰については周揺動回数４
０００回ぐらい筐で、摩擦係数１３以下の長寿命潤滑膜
となることが、 ＰＴＦＥをターゲットに用いて得られ
た膜については、摩擦係数α１５という高潤滑膜である
ことがわかった。このように低摩擦、耐摩耗性のある膜
が得られ、活性酸素中でもこれらはエツチングされない
ことより化学的に安定であり、はっ水（油）性も兼ね備
えている。In the case of the fluorocarbon polymer film according to the present invention, it is estimated that it exhibits excellent lubricity because the film is composed only of carbon having C-F bonds, which give rise to low surface energy gold, which is the cause of lubricity. be done. In fact, the sample was oscillated at a speed of 3 Hz, a radius of 20 m, and an oscillating angle of 60°, and the
ii-Fig. 5 and Fig. 4 show the test results when friction was caused by pressing at 4.9N. From this ETF III: f:
For the unarmed waist obtained using the target, the number of circumferential swings is 4
It was found that a long-life lubricant film with a friction coefficient of 13 or less can be obtained after approximately 1,000 cycles of casing, and a film obtained using PTFE as a target has a high lubricant film with a friction coefficient of α15. In this way, a film with low friction and wear resistance is obtained, and since it is not etched even in active oxygen, it is chemically stable and also has water (oil) repellency.
また二硫化モリブデン、二硫化タングステン、り“ラフ
ァイト等の固体潤滑剤との間で複合膜を形成すれば、こ
れらの物質の欠点となっている耐湿性を改善した優れた
固体潤滑膜も得られる。Furthermore, if a composite film is formed with solid lubricants such as molybdenum disulfide, tungsten disulfide, or graphite, an excellent solid lubricant film can be obtained that improves moisture resistance, which is a drawback of these materials. .
以上説明したように、本発明により真空中における長寿
命高潤滑膜が、フルオロポリマーをターゲットにフッ化
炭素糸ガスをプラズマガスとして使用したスパッタ法に
より得ることが可能となった丸め、高潤滑性、ち密性に
よる保護、潤滑膜として以下に示す使用方法がある。As explained above, according to the present invention, a long-life, highly lubricating film in vacuum can be obtained by a sputtering method using fluoropolymer as a target and fluorocarbon thread gas as a plasma gas. , protection by tightness, and as a lubricating film as shown below.
（１１宇宙環境下で使用される機構部品の保護、潤滑膜
（２） 真空装置内で使用される機構部分の保護、潤
滑膜
（３）清浄環境下で使用される機構部品の保護、潤滑膜
（４） 磁気ディスク、磁気ヘッドの保護膜なお、本
発明に係るフッ化炭素系高分子ａは導電率が高いという
特徴も有し、導電膜としても利用できる。(11 Protection of mechanical parts used in space environment, lubricating film (2) Protection of mechanical parts used in vacuum equipment, lubricating film (3) Protection of mechanical parts used in clean environment, lubricating film (4) Protective film for magnetic disks and magnetic heads The fluorocarbon polymer a according to the present invention also has a feature of high electrical conductivity, and can be used as a conductive film.
第１図は本発明方法に係るフッ化炭素系高分子膜の製造
に使用する装置の１例である高周波スパッタ装置の概略
図、第２図は本発明方法による、高周波スパッタ法でタ
ーゲットにＰＴＦＥ。
プラズマガスにフレオンを用いて得られた膜のＸＰＳス
ペクトル図、第５図は高周波スパッタ法で得られた各種
高分子膜の潤滑機能を失うまでの周揺動回数を示したグ
ラフ、第４図は高周波スパッタ法で得られた各種高分子
膜の摩擦係数を示したグラフである。Fig. 1 is a schematic diagram of a high-frequency sputtering apparatus, which is an example of an apparatus used for manufacturing a fluorocarbon polymer film according to the method of the present invention, and Fig. 2 is a schematic diagram of a high-frequency sputtering apparatus that uses PTFE as a target using the high-frequency sputtering method according to the method of the present invention. . Figure 5 is an XPS spectrum diagram of a film obtained using Freon as the plasma gas. Figure 5 is a graph showing the number of rotations until the lubricating function of various polymer films obtained by high-frequency sputtering is lost. Figure 4. is a graph showing the friction coefficients of various polymer films obtained by high-frequency sputtering.
Claims (1)
ガスを混合したフッ化炭素系ガスによりスパッタリング
を行い、膜形成を行うことを特徴とするフッ化炭素系高
分子潤滑膜の製造方法。1. A method for producing a fluorocarbon-based polymer lubricating film, which comprises forming a film by sputtering with a fluorocarbon-based gas or a fluorocarbon-based gas mixed with a fluoropolymer and an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2636487A JPS63195261A (en) | 1987-02-09 | 1987-02-09 | Production of lubricative film of fluorocarbon polymer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2636487A JPS63195261A (en) | 1987-02-09 | 1987-02-09 | Production of lubricative film of fluorocarbon polymer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63195261A true JPS63195261A (en) | 1988-08-12 |
Family
ID=12191444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2636487A Pending JPS63195261A (en) | 1987-02-09 | 1987-02-09 | Production of lubricative film of fluorocarbon polymer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63195261A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH042765A (en) * | 1990-04-20 | 1992-01-07 | Nippon Telegr & Teleph Corp <Ntt> | Formation of organic thin film |
| EP0481498A2 (en) * | 1990-10-19 | 1992-04-22 | Canon Kabushiki Kaisha | Information recording unit and apparatus and method for information recording/reproduction |
-
1987
- 1987-02-09 JP JP2636487A patent/JPS63195261A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH042765A (en) * | 1990-04-20 | 1992-01-07 | Nippon Telegr & Teleph Corp <Ntt> | Formation of organic thin film |
| EP0481498A2 (en) * | 1990-10-19 | 1992-04-22 | Canon Kabushiki Kaisha | Information recording unit and apparatus and method for information recording/reproduction |
| US5392275A (en) * | 1990-10-19 | 1995-02-21 | Canon Kabushiki Kaisha | Information recording unit and method for information recording/reproduction |
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