JPS63193447A - Sample holding device - Google Patents
Sample holding deviceInfo
- Publication number
- JPS63193447A JPS63193447A JP62023134A JP2313487A JPS63193447A JP S63193447 A JPS63193447 A JP S63193447A JP 62023134 A JP62023134 A JP 62023134A JP 2313487 A JP2313487 A JP 2313487A JP S63193447 A JPS63193447 A JP S63193447A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- wafer
- thin film
- metallic thin
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000002470 thermal conductor Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052737 gold Inorganic materials 0.000 abstract description 8
- 239000010931 gold Substances 0.000 abstract description 8
- 238000010884 ion-beam technique Methods 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 4
- 229920002379 silicone rubber Polymers 0.000 abstract description 4
- 239000004945 silicone rubber Substances 0.000 abstract description 4
- 238000007738 vacuum evaporation Methods 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000020169 heat generation Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、イオン注入Ｈ！、スパッタリングによる薄
膜形成装置、イオン注入と真空蒸着とを併用するイオン
蒸着薄膜形成装置、イオンビームによるエツチング装置
などに用いられ、真空室内で処理する試料、例えばウェ
ハを保持台に保持する試料保持［１に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) This invention is based on ion implantation H! It is used in thin film forming equipment by sputtering, ion evaporation thin film forming equipment that uses both ion implantation and vacuum evaporation, and etching equipment using ion beams. Regarding 1.
（従来の技術）
例えば、真空室内でウェハにイオン注入などの処理を施
こすと、該ウェハが発熱して損傷することがあるので、
従来ではウェハを、冷却水、冷却ガスなどの冷却媒体を
循環させた保持台で保持し、これを冷却するを一般とし
ている。(Prior Art) For example, when a wafer is subjected to a process such as ion implantation in a vacuum chamber, the wafer may generate heat and be damaged.
Conventionally, the wafer is generally held on a holding table in which a cooling medium such as cooling water or cooling gas is circulated to cool the wafer.
しかし、保持台の金属面にウェハを置いているだけでは
、微視的にみてウェハと金属面の接触部がほとんどない
、他方、真空中におけるウェハの熱放散の大部分は、保
持台を介しての熱伝導のみとなり、したがって、その熱
伝導が悪いなどといった不都合がある。However, if the wafer is simply placed on the metal surface of the holder, there is almost no microscopic contact between the wafer and the metal surface.On the other hand, most of the heat dissipation from the wafer in vacuum occurs through the holder. Therefore, there are disadvantages such as poor heat conduction.
この対策として、例えば第２図に示すようなイオノ注入
装置の試料保持装置が提案されている。As a countermeasure against this problem, a sample holding device for an ion injection device as shown in FIG. 2, for example, has been proposed.
同図に示すように、保持台である例えば上面中央部分が
やや凸伏となる球面状（図には表われていない、）のプ
ラナ７１に、弾性を有するシリコンゴムに金属粉などを
混合した熱伝導体２′を介して試料である例えばウェハ
〇を載せ、これをウェハ押え４をもってバネ５により圧
着している。これにより、プラテン１とウェハ〇との書
替性の改善を図り、このような伏歯で、真空室内におい
て、前記ウェハ３に図示しないイオン源からイオンビ−
ム夏Ｂを照射してイオン注入処理を行っている。なお、
図中６は、冷却水、冷却ガスなどの冷却媒体を循環する
冷媒路である。As shown in the figure, a holding table, for example, a spherical planar 71 (not shown in the figure) with a slightly convex central portion of the upper surface, is made by mixing elastic silicone rubber with metal powder, etc. A sample, such as a wafer 〇, is placed via the thermal conductor 2' and is pressed by a spring 5 with a wafer holder 4. This improves the rewritability between the platen 1 and the wafer 〇, and with such an inclined tooth, ion beams are applied to the wafer 3 from an ion source (not shown) in a vacuum chamber.
The ion implantation process is performed by irradiating with Musuma B. In addition,
Reference numeral 6 in the figure indicates a refrigerant path through which a cooling medium such as cooling water or cooling gas is circulated.
（発明が解決しようとする問題点）
ところが、前記ウェハ３、熱伝導体２′およびプラテン
１０表面は、微視的にみるとやはり凹凸があり、これら
の接触は点接触となり、熱伝導が充分ではない、特に、
近年のようにイオンビーム電流の大電流化が図られるに
つれ、ウェハ〇の温度上昇が過大となり、ウニへ〇上に
描かれたパターンのレジスト膜を劣化するなどといった
不都合があり、その改善が強く望まれている。(Problems to be Solved by the Invention) However, the surfaces of the wafer 3, thermal conductor 2', and platen 10 are uneven when viewed microscopically, and the contact between them is a point contact, so that sufficient heat conduction is not achieved. Not, especially
In recent years, as the ion beam current has become larger, the temperature of the wafer 〇 has become excessive, causing problems such as deterioration of the resist film of the pattern drawn on the 〇. desired.
この発明は上述の事柄に鑑み、試料と保持台との間の熱
伝導率の向上を図り、ウェハを効果的に冷却することを
目的とする。In view of the above-mentioned problems, it is an object of the present invention to improve the thermal conductivity between the sample and the holder and effectively cool the wafer.
（ｒＲＷｉ点を解決するための手段）
この発明は・、試料と保持台との間に、熱伝導体の両面
に金属薄膜層を形成してなる熱伝導媒体を介在すること
を特徴とする。(Means for solving the rRWi point) The present invention is characterized in that a heat conduction medium formed by forming metal thin film layers on both surfaces of a heat conductor is interposed between the sample and the holding table.
（作 用）
金属＋３膜層により、試料と熱伝導媒体およびこの熱伝
導媒体と保持台との間の熱抵抗が低減され、熱伝導度が
向上する。(Function) The metal+3 film layer reduces the thermal resistance between the sample and the thermally conductive medium and between this thermally conductive medium and the holding table, improving thermal conductivity.
（実施例）
以下この発明の一実施例を示す第１図に基づいて説明す
る。なお、第２図と同じ符号を附した部分は、同−又は
対応する部分を示す。この発明にしたがい、プラナ／１
とウェハ３との間には、弾性を有する熱伝導体２０両面
に金［ＲＲ膜層７を形成した熱伝導媒体８を介在する。(Embodiment) An embodiment of the present invention will be described below based on FIG. 1. In addition, parts given the same reference numerals as in FIG. 2 indicate the same or corresponding parts. According to this invention, prana/1
A heat conductive medium 8 having gold [RR film layers 7 formed on both surfaces of an elastic heat conductor 20] is interposed between the wafer 3 and the wafer 3.
この熱伝導媒体８は、例えば、弾性および耐熱性を有す
るシリコーンゴムに、アルミナ、ボロンナイトライド、
アルミニウム、ダイヤモンド、カーボン、あるいは金な
どからなる熟伝４微粒子を混合してなる熱伝導体２０両
面に例えば、化学メッキ、真空蒸着、スパッタリングあ
るいはイオン注入と真空蒸着とを併用するなどして、ア
ルミニウム、金あるいは銀などの金１１１ｊｌｌＥｌ１
５７を形成したものである。The heat conductive medium 8 is made of silicone rubber having elasticity and heat resistance, alumina, boron nitride, etc., for example.
Aluminum is coated on both sides of the thermal conductor 20, which is made by mixing fine particles of aluminum, diamond, carbon, gold, etc., using chemical plating, vacuum evaporation, sputtering, or a combination of ion implantation and vacuum evaporation. , gold or silver 111jllEl1
57 was formed.
前記熱伝導体２としては、その弾性すなわち、ブラタ／
１とウェハ３との間のクッシ９ン作用や熱抵抗、更には
これらの材質や大きさなどを考慮して決められるが、一
般的にけその厚さが２０〜５００μ程度、その硬度（Ｉ
ｆ定方法： Ｊ Ｉ ５Ｋ８３０１、以下同じ、）が６
０〜９５程度、その熱伝導率がα００５〜αＱ ５ （
Ｊ ／ ３ ・５ｅｃ−Ｋ）であればよい、また、必要
に応じて基材の強度補強などの目的で、例えば、ガラス
繊維などを充填材として充填したものでもよい、また、
前記金属薄膜ＩＩ！１７の厚さは、その材質により異な
るが、一定の膜圧強度を有し、しかも前記熱伝導体２０
弾性を損なわないような範囲に決められるが、一般的に
は５００〜５０００Ａ１度あれば充分である。なお、前
記熱伝導媒体８は、単にプラテン１の上に載せて置（の
みでよいが、これがウェハ３とともに移動したりするの
を防ぐために、その周辺部分を接着剤により接着したり
、あるいはこれら熱伝導媒体８の金属Ｒ膜層７とプラテ
ン１との間を半田などのような低融点金属材料をもって
同行してもよい。As for the thermal conductor 2, its elasticity, that is, its elasticity,
The thickness of the cushion is generally about 20 to 500μ, and the hardness (I
f determination method: J I 5K8301, the same applies hereafter) is 6
0 to 95, and its thermal conductivity is α005 to αQ 5 (
J/3・5ec-K), and if necessary, it may be filled with glass fiber or the like as a filler for the purpose of reinforcing the strength of the base material.
Said metal thin film II! The thickness of the thermal conductor 20 differs depending on its material, but it has a certain film pressure strength, and the thickness of the thermal conductor 20
It is determined within a range that does not impair elasticity, but generally 500 to 5000 A1 degree is sufficient. Note that the thermal conductive medium 8 may be simply placed on the platen 1, but in order to prevent it from moving together with the wafer 3, its peripheral portion may be bonded with an adhesive or A low melting point metal material such as solder may be used between the metal R film layer 7 of the heat conduction medium 8 and the platen 1.
以上の構成によれば、イオンビームの照射処理によりつ
二へ〇が発熱しても、その熱はウェハ３から熱伝導媒体
８の熱抵抗の小さい金属薄膜層７を介して熱伝導体２中
を熱が伝わり、また金ＷＡＲ膜Ｉｌ！１７を介してプラ
テン１に速やかに伝達され、冷却される。この結果、ウ
ェハ３の温度上昇が抑制される。According to the above configuration, even if the heat is generated by the ion beam irradiation process, the heat is transferred from the wafer 3 to the heat conductor 2 through the metal thin film layer 7 with low thermal resistance of the heat conduction medium 8. The heat is transmitted, and the gold WAR film Il! 17 to the platen 1, where it is cooled. As a result, the temperature rise of the wafer 3 is suppressed.
（実験例）
厚さ１００μ、硬度が９２で、その熱伝４率がα０１
（Ｊ ／ ｃｓ−ｓｅｃ−ｋ＞のシリコーンゴム製の熱
伝導体に、真空ｉｔにより厚さ１００ＯＡのアルミニウ
ムの金属薄膜層を両面に形成した熱伝導媒体を作り、こ
の熱伝導媒体を第１図に示すように、プラテン１の上に
設け、その上にシリコンウェハ３を載せ、ウェハ押え４
をもってバネ５により圧着した。この吠態で、冷却路に
冷却水を循環しながら、真空室内で前記シリコ／ウェハ
３にイオン注入処理を行なった。イオン注入装置は、定
格２００にＶ、１．５ｍＡで、そのイオン注入による熱
エネルギーは％ ３００Ｗに相当する。この時のつエバ
３の表面温度を測定したところ、７７℃であった。(Experiment example) The thickness is 100μ, the hardness is 92, and the heat transfer coefficient is α01.
(J/CS-SEC-K) A heat conduction medium is made by forming a 100OA thick aluminum metal thin film layer on both sides using a vacuum IT on a silicone rubber heat conductor. As shown in FIG.
It was crimped with a spring 5. In this state, ion implantation was performed on the silico/wafer 3 in a vacuum chamber while circulating cooling water in the cooling path. The ion implanter was rated at 200 V and 1.5 mA, and the thermal energy due to the ion implantation was equivalent to %300 W. At this time, the surface temperature of the tube 3 was measured and found to be 77°C.
これに対して、第２図に示す構成で、熱伝導体２として
厚さ１００μ、硬度が９２、その熱伝導率がα０１ （
Ｊ ／ ａｍ ・５ｅｃ−ｋ）のシリコーンゴム製のも
のを用いたものを作り、前記実験例と同一の条件で、シ
リコンウェハ３にイオン注入処理を行なった。この時の
ウェハ３の表面温度は、１２５℃であった。On the other hand, in the configuration shown in FIG. 2, the thermal conductor 2 has a thickness of 100μ, a hardness of 92, and a thermal conductivity of α01 (
An ion implantation process was performed on the silicon wafer 3 under the same conditions as in the experimental example. The surface temperature of the wafer 3 at this time was 125°C.
（発明の効果）
以上詳述の通りこの発明によれば、弾性を有する熱伝導
体の両面に金ＦＡ薄膜層を形成した熱伝導媒体を、試料
と保持台との間に介在したことにより、その弾性を実質
的に維持しつつ、試料あるいは保持台との接触部におけ
る実効的な熱伝導度を向上し、効果的に試料を冷却する
ことができる。(Effects of the Invention) As detailed above, according to the present invention, by interposing a heat conductive medium having gold FA thin film layers formed on both sides of an elastic heat conductor between the sample and the holding table, While substantially maintaining its elasticity, it is possible to improve the effective thermal conductivity at the contact portion with the sample or the holder, thereby effectively cooling the sample.
なお、上述した実施例では、試料を保持台にバネ力をも
って保持した場合について詳述したが、この発明はこの
ようなものに限定されるものではな（、他の保持手段例
えば、ディスク状の保持台に試料を社せ、これを回転し
て遠心力を利用するようにしたものなどにも連用できる
のは勿論である。In addition, in the above-mentioned embodiments, the case where the sample is held on the holding stand with spring force is described in detail, but the present invention is not limited to this (other holding means such as a disk-shaped Of course, this method can also be used in systems where a sample is placed on a holding table and the sample is rotated to utilize centrifugal force.
第１図は、この発明の一実施例を示す要部拡大断面図で
ある。第２図は、従来例を示す部分断面図である。
１ニブラテン（保持台）、２：熱伝４体、３：ウェハ（
試料）、７：金ｌｉＩ薄膜層、８：熱伝導媒体。FIG. 1 is an enlarged sectional view of essential parts showing an embodiment of the present invention. FIG. 2 is a partial sectional view showing a conventional example. 1 Nibraten (holding stand), 2: 4 heat transfer bodies, 3: Wafer (
Sample), 7: Gold liI thin film layer, 8: Thermal conduction medium.
Claims (1)
て、前記試料と保持台との間に、弾性を有する熱伝導体
の両面に金属薄膜層を形成してなる熱伝導媒体を介在し
たことを特徴とする試料保持装置。In a device that holds a sample to be processed in a vacuum chamber on a holder, a heat conductive medium consisting of an elastic thermal conductor with metal thin film layers formed on both sides is interposed between the sample and the holder. Characteristic sample holding device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62023134A JPS63193447A (en) | 1987-02-03 | 1987-02-03 | Sample holding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62023134A JPS63193447A (en) | 1987-02-03 | 1987-02-03 | Sample holding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63193447A true JPS63193447A (en) | 1988-08-10 |
Family
ID=12102064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62023134A Pending JPS63193447A (en) | 1987-02-03 | 1987-02-03 | Sample holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63193447A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367171A (en) * | 1991-10-24 | 1994-11-22 | Hitachi, Ltd. | Electron microscope specimen holder |
| US5413167A (en) * | 1990-07-30 | 1995-05-09 | Canon Kabushiki Kaisha | Wafer cooling device |
| EP1014421A1 (en) * | 1998-12-21 | 2000-06-28 | Applied Materials, Inc. | Wafer holder of ion implantation apparatus |
| EP1501135A2 (en) * | 2003-07-22 | 2005-01-26 | Polymatech Co., Ltd. | Thermally conductive holder |
-
1987
- 1987-02-03 JP JP62023134A patent/JPS63193447A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413167A (en) * | 1990-07-30 | 1995-05-09 | Canon Kabushiki Kaisha | Wafer cooling device |
| US5367171A (en) * | 1991-10-24 | 1994-11-22 | Hitachi, Ltd. | Electron microscope specimen holder |
| EP1014421A1 (en) * | 1998-12-21 | 2000-06-28 | Applied Materials, Inc. | Wafer holder of ion implantation apparatus |
| US6545267B1 (en) | 1998-12-21 | 2003-04-08 | Applied Materials, Inc. | Wafer holder of ion implantation apparatus |
| EP1501135A2 (en) * | 2003-07-22 | 2005-01-26 | Polymatech Co., Ltd. | Thermally conductive holder |
| EP1501135A3 (en) * | 2003-07-22 | 2008-07-02 | Polymatech Co., Ltd. | Thermally conductive holder |
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