JPS63187535A - Cold cathode vacuum tube - Google Patents
Cold cathode vacuum tubeInfo
- Publication number
- JPS63187535A JPS63187535A JP1614787A JP1614787A JPS63187535A JP S63187535 A JPS63187535 A JP S63187535A JP 1614787 A JP1614787 A JP 1614787A JP 1614787 A JP1614787 A JP 1614787A JP S63187535 A JPS63187535 A JP S63187535A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electrode
- insulating layer
- electron emitting
- vacuum tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000004044 response Effects 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000007257 malfunction Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 CsSi and RbSi Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は冷陰極真空管に係り、特に電子放出源として冷
陰極音用いて作表された冷陰極真空管に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cold cathode vacuum tube, and more particularly to a cold cathode vacuum tube produced using cold cathode sound as an electron emission source.
現在、整流作用、増幅作用を有する回路素子としては、
ダイオード、トランジスタ等のＰ型半導体とＮ型半導体
を組み合わせて構成てれる半導体素子が多く用いられて
いる。Currently, circuit elements with rectification and amplification functions include:
2. Description of the Related Art Semiconductor elements such as diodes and transistors that are constructed by combining a P-type semiconductor and an N-type semiconductor are often used.
これらの半導体素子は、小型、軽量で集積化が可能であ
り、大幅にコスト低減が可能であり、長寿命であること
から信頼性が高い等の長所を有しており、コンピュータ
等の情報機器、テＶビ、ラジオ等の家庭電器製品等各種
の用途に用いられている。These semiconductor elements have advantages such as being small, lightweight, and can be integrated, allowing for significant cost reductions, and having a long life and high reliability. It is used in various applications such as home appliances such as TVs, radios, etc.
しかしながら、上記のダイオード、トランジスタ等の半
導体素子はα線等の放射線に対して誤動作を生ずる問題
点を有しており、また応答速度にオイても〜１００ Ｍ
Ｈｚ （３１トランジスタ等）程度であり、ＧＨｚの応
答速度が要求される分野では用いることが困難であった
。これらの問題点は、二極管、三極管等の真空管を用い
ることによって解決可能であるが、逆に真空管は、熱陰
極の不安定性、耐衝撃性等の信頼性、小型化等の問題点
全有していた。However, semiconductor devices such as diodes and transistors have the problem of malfunctioning due to radiation such as alpha rays, and even if the response speed is low,
Hz (31 transistors, etc.), making it difficult to use in fields that require a GHz response speed. These problems can be solved by using vacuum tubes such as diodes and triodes, but on the other hand, vacuum tubes have all the problems such as instability of the hot cathode, reliability such as shock resistance, and miniaturization. was.
本発明の目的は上記問題点に鑑み、従来の半導体素子と
真空管との両者の長所を兼ね備えた新規な構成の真空管
ｆｔ提供することにある。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a vacuum tube ft with a novel structure that combines the advantages of both conventional semiconductor devices and vacuum tubes.
上記の問題点は、電子放出側のＰ型半導体領域に仕事関
数低下材領域を接合させた電子放出素子の電子放出部上
に電子放出口が設けられた絶縁層を介して形成されたプ
レート電極とを有する本発明の冷陰極真空管によって解
決される。The above problem is caused by the plate electrode being formed on the electron emitting part of the electron emitting element in which the work function reducing material region is bonded to the P-type semiconductor region on the electron emitting side via an insulating layer provided with an electron emitting hole. The problem is solved by the cold cathode vacuum tube of the present invention having the following features.
本発明は、半導体基体に形成された接合型電子放出領域
を、熱陰極の代わりに用いることにより、真空管の電子
放出源の半導体素子化を図り且つ半導体基体上に、少な
くとも電子放出源である電子放出領域と絶縁層を介して
形成されたプレート電極とを設けることにより、半導体
基体上に真空管を形成しようとするものである。The present invention aims at converting the electron emission source of a vacuum tube into a semiconductor element by using a junction type electron emission region formed on a semiconductor substrate in place of a hot cathode, and at the same time, it is possible to use a junction type electron emission region formed on a semiconductor substrate in place of a hot cathode. The idea is to form a vacuum tube on a semiconductor substrate by providing an emission region and a plate electrode formed through an insulating layer.
なふ・、前記電子放出領域と前記絶縁層との間に電子制
御用のグリッド電極金膜けなければ、二極管として、グ
リッド電極を−又は二以上設ければ三極管、四極管等の
真空管を構成することができる。If there is no grid electrode gold film for electronic control between the electron emission region and the insulating layer, it can be used as a diode, and if one or more grid electrodes are provided, it can be used as a vacuum tube such as a triode or tetrode. can do.
１だ、電子放出素子とグリッド電極あるいはプレート電
極間の距離を電子の大気圧下でのｍｅａｎｆｒｅｅ ｐ
ａｔｈ （平均自由散乱行程）よりも短かくすることに
より（約１μｍ ） ％ Ｋ真空を用りずともデバイス
としての動作が期待できる。1. The distance between the electron-emitting device and the grid electrode or plate electrode is the meanfree p of electrons under atmospheric pressure.
By making it shorter than ath (mean free scattering path) (approximately 1 μm), operation as a device can be expected without using a %K vacuum.
以下、本発明の実施例について図面を用いて詳細に説明
する。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の冷陰極真空管の一実施例全示す概略的
断面図である。FIG. 1 is a schematic sectional view showing an embodiment of the cold cathode vacuum tube of the present invention.
同図に示すように、Ｎ型８１ （１００）基板２上に絶
縁層５を一面に形成した後、フォトリソグラフィ等によ
ってＰ型半導体領域（以下Ｐ領域と記す）３全形成する
ための開口部を設ける。続いて、Ｐ領域３１！：不純物
拡散等の方法によって形成し、更にイオン打ち込み等に
よってオーミックコンタクト用の高不純物濃度のＰ領域
４及びＰ＋１領域５を形成する。Ｐ領域３上には後述す
る低仕事関数材料膜１２が形成され電子放出部を形成す
る。絶縁層６上にはＡｔ等の電極７が形成され、 ｔ
さらにＳｌＯ□等の絶縁層８を介してＡ４ 、ポリＳ１
等のグリッド電極９が形成され、このグリッド電極９上
に８１０２等の絶縁層１０全介してＡｔ等のプレート電
極１１を形成する。Ｎ型Ｓｔ基板２の反対側にはオーミ
ックコンタクト層を介して電極１を形成する。As shown in the figure, after forming an insulating layer 5 over an N-type 81 (100) substrate 2, an opening is formed to completely form a P-type semiconductor region (hereinafter referred to as P region) 3 by photolithography or the like. will be established. Next, P area 31! : Formed by a method such as impurity diffusion, and further formed with high impurity concentration P region 4 and P+1 region 5 for ohmic contact by ion implantation or the like. A low work function material film 12, which will be described later, is formed on the P region 3 to form an electron emitting region. An electrode 7 made of At or the like is formed on the insulating layer 6, and t
Furthermore, A4 and poly S1 are connected via an insulating layer 8 such as SlO
A grid electrode 9 such as 8102 or the like is formed, and a plate electrode 11 made of At or the like is formed on this grid electrode 9 through the entire insulating layer 10 such as 8102 or the like. An electrode 1 is formed on the opposite side of the N-type St substrate 2 via an ohmic contact layer.
本実施例で使用される低仕事関数材料膜１２としては、
仕事関数が約２．５＠Ｖ以下の金属材料が望ましく、た
とえば、Ｌｉ ｅ Ｎａ ＃ Ｋ ＃ Ｒｂ ｓ Ｓｒ
ｅ Ｃ＠ｔＢａ 、 Ｅｕ 、 Ｙｂ 、 Ｆｒ等を
用いることができる。また、低仕事関数材料膜１２０安
定化を考慮すれば、ＣｓＳｉやＲｂＳｉ等のアルカリ金
属シリサイドや、金属炭化物、ホウ素等を使用してもよ
い。The low work function material film 12 used in this example is as follows:
A metal material with a work function of about 2.5@V or less is desirable, for example, Li e Na # K # Rb s Sr
e C@tBa, Eu, Yb, Fr, etc. can be used. Furthermore, in consideration of stabilizing the low work function material film 120, alkali metal silicides such as CsSi and RbSi, metal carbides, boron, etc. may be used.
なお、本実施例においてＳｔ基板１に（１００）面を使
用したのは、シリコンでは（１００）面の場合に電子親
和力が小ざくなり、この電子親和力が小さくなることで
電子が放出され易くなるからである。In addition, in this example, the (100) plane was used for the St substrate 1 because in the case of silicon, the electron affinity becomes small in the case of the (100) plane, and as this electron affinity becomes small, electrons are easily emitted. It is from.
なお、本実施例では電子放出側のＰ型半導体Ｊ傷に低仕
事関数材料膜全接合し、逆バイアスをかけることで、高
効率に電子を放出する電子放出素子を構成したが、第２
図に示すように絶縁層１３を介して引き出し電極１４を
形成し、正電圧？加えれば、ショットキー効果により仕
事関数の低下が生じ、更に大きな寛子放ｔ！３量を得る
ことができる。In this example, an electron-emitting device that emits electrons with high efficiency was constructed by fully bonding the low work function material film to the P-type semiconductor J scratch on the electron-emitting side and applying a reverse bias.
As shown in the figure, an extraction electrode 14 is formed through an insulating layer 13, and a positive voltage is applied. In addition, the Schottky effect causes a decrease in the work function, resulting in an even greater Hiroko release t! 3 quantities can be obtained.
上記のよりなＭ成を有する冷陰極真空管において、ｔ＠
ｌと電極６との間に電圧ｖ１を印加してＰＮ接合に順方
向バイアスをかけ、ｊ＆電極と低仕事関数材料膜１２と
の間に逆バイアスＶｓ ｋ印加すると、Ｎ型ｓｉ基板２
からＰ領域３に電子が注入され、この電子は、極めて薄
いＰ型半導体層の中を格子に散乱されることなく進行し
、このため低仕事関数材料膜とＰ漕手導体の界面でホッ
ト化することにより、低仕事関数材料膜１２の異面から
放出される。放出された電子は′ｒｉ極７とグリッド１
Ｓｉ極９との間に印加きれるバイアス電圧Ｖ、によって
制御される。このバイアス電圧Ｖｇ（ｊｆＬｔ圧）の値
を小さくしてい＜ （ＩＶｇＩは大きくなる）と電子は
反発されて、プレート電極に致達する電子Ｆｉ減少して
いく、逆に大きくしてい＜ （ＩＶｇ１は小さくなる）
と電子はグリッド電極９を通過してグレート電極に致達
し、グレート電流！、は増加する。In the cold cathode vacuum tube with the above-mentioned higher M configuration, t@
When voltage v1 is applied between l and electrode 6 to apply forward bias to the PN junction, and reverse bias Vs k is applied between j& electrode and low work function material film 12, N-type Si substrate 2
Electrons are injected into the P region 3, and these electrons proceed through the extremely thin P-type semiconductor layer without being scattered by the lattice, and therefore become hot at the interface between the low work function material film and the P rower conductor. As a result, it is emitted from different surfaces of the low work function material film 12. The emitted electrons are connected to 'ri pole 7 and grid 1
It is controlled by the bias voltage V that can be applied between the Si electrode 9 and the Si electrode 9. If the value of this bias voltage Vg (jfLt pressure) is decreased < (IVgI becomes larger), electrons are repelled and the electrons Fi reaching the plate electrode decrease. Become)
The electrons pass through the grid electrode 9 and reach the great electrode, creating a great current! , increases.
以上説明した本実施例の冷陰極真空管はグリッド電極が
一つの三極管と同じ構成であり、第３図に示した三極管
の等価回路図と同等である。The cold cathode vacuum tube of this embodiment described above has the same configuration as a triode having one grid electrode, and is equivalent to the equivalent circuit diagram of the triode shown in FIG.
すなわち、同図に示したグレートＰ、グリッドＧ、カソ
ードＣは第１図に示したグレート電極１１、グリッド電
極９、電子放出領域Ａに対応する。That is, the grate P, grid G, and cathode C shown in the figure correspond to the grate electrode 11, grid electrode 9, and electron emission region A shown in FIG.
なお、電子放出領域に用いられる電子放出素子としては
ＰＮ接合順方向バイアス型に限定されず、半導体基板上
に形成可能な方式であれば、他の方式でもよい。Note that the electron-emitting device used in the electron-emitting region is not limited to the PN junction forward bias type, but may be of any other type as long as it can be formed on the semiconductor substrate.
第４図は本発明の冷陰極真空管に用いられる電子放出素
子の他の実施例を示す概略的断面図である。FIG. 4 is a schematic cross-sectional view showing another embodiment of the electron-emitting device used in the cold cathode vacuum tube of the present invention.
本実施例は、ＰＮ接合ｔ−有するなだれ降伏型電子放出
素子である。This example is an avalanche breakdown type electron-emitting device having a PN junction t-.
同図において、Ｐ型半導体基板１５に形成式れたＰ＋層
１６とＰ型半導体基板１５上に形成されたＮ＋層１７と
の間に逆バイアス電圧Ｖａｔ印加すると、高濃度にドー
グされたＰ＋層１６とＮ＋層１７との間の空乏領域でな
だれ降伏が生起し、加速された電子が１層１７表面から
放出する。In the figure, when a reverse bias voltage Vat is applied between a P+ layer 16 formed on a P-type semiconductor substrate 15 and an N+ layer 17 formed on the P-type semiconductor substrate 15, a highly doped P+ layer is formed. Avalanche breakdown occurs in the depletion region between the N+ layer 16 and the N+ layer 17, and accelerated electrons are emitted from the surface of the first layer 17.
電子は空乏領域中でＰ＋層１６から１層１７側へ加速さ
れるために、放出電子のエネルギ分布は尖鋭であシ、放
出効率も高い。Since the electrons are accelerated from the P+ layer 16 to the first layer 17 side in the depletion region, the energy distribution of the emitted electrons is sharp and the emission efficiency is high.
また、側速電極１９に電圧を印加することにより、放出
でれた電子が加速されるとともに、シ。Further, by applying a voltage to the side velocity electrode 19, the emitted electrons are accelerated and the electrons are shrunk.
ットキ効果によって仕事関数が低下し、電子放出効率を
高めることができる。The work function is lowered by the Kottky effect, and electron emission efficiency can be increased.
なお、以上説明した本発明の冷陰極真空管はグリッド電
極を一つ設けたものであり、三極管に対応するものであ
ったが、グリッド電極を設けなければ二極管、グリッド
電他全二つ以上設ければ、四極管、三極管等の真空管に
対応する冷陰極真空管を作製することができる。The cold cathode vacuum tube of the present invention described above is equipped with one grid electrode and corresponds to a triode; however, if the grid electrode is not provided, two or more diode tubes, grid electrodes, etc. can be installed. For example, a cold cathode vacuum tube corresponding to a vacuum tube such as a tetrode or triode can be manufactured.
以上、詳細に説明したように、本発明の冷陰極真空管に
よれば、電子放出側のＰ型半導体領域に仕事関数低下材
領域を接合させた電子放出素子を、熱陰極の代わりに用
いることによシ、真空管の電子放出源の半導体素子化を
図り且つ半導体基体上に、少なくとも電子放出源である
電子放出領域と絶縁層を介して形成されたプレート電極
とを設けることにより、半導体基体上に真空管を形成す
ることができる。その結果として、本発明の冷陰極真空
管は、半導体素子のように固体内を電子が移動すること
がないので、高速応答デバイスが可能であり、高インピ
ーダンスで、α線等の放射線の影響全受けにくいという
特徴を有し、また従来の真空管のように熱陰極音用いな
いので長寿命で、安定性が使れており、従来の半導体微
細加工プロセスを用いることができるので小型化、軽量
化が容易に行うことができるという特徴を有している。As explained above in detail, according to the cold cathode vacuum tube of the present invention, an electron emitting element in which a work function reducing material region is bonded to a P-type semiconductor region on the electron emitting side can be used instead of a hot cathode. By making the electron emission source of the vacuum tube into a semiconductor element and providing at least an electron emission region serving as an electron emission source and a plate electrode formed through an insulating layer on the semiconductor substrate, it is possible to Vacuum tubes can be formed. As a result, the cold cathode vacuum tube of the present invention is capable of high-speed response devices because electrons do not move within a solid body unlike semiconductor devices, and it has high impedance and is completely immune to the effects of radiation such as alpha rays. It also has a long lifespan and stability because it does not use hot cathode sound like conventional vacuum tubes, and it can be made smaller and lighter because it can use conventional semiconductor microfabrication processes. It has the characteristic of being easy to perform.
また、本発明の冷陰極真空管は半導体基体上に設けられ
るので他の半導体素子と一体化することができ、集積化
が可能であるという特徴も有している。Further, since the cold cathode vacuum tube of the present invention is provided on a semiconductor substrate, it can be integrated with other semiconductor elements, and has the feature that it can be integrated.
なお、電子制御用のグリッド電極を設けなければ、二極
管として、グリッド電極を−又は二以上設ければ三極管
、四項管等の真空管を構成することができる。Note that if a grid electrode for electronic control is not provided, it can be used as a diode, and if one or more grid electrodes are provided, a vacuum tube such as a triode or quartet tube can be constructed.
第１図は本発明の冷陰極真空管の一実施例を示す概略的
断面図である。
第２図は引出し電極を有するＰＮ接合順方向バイアス型
の電子放出素子の概略的断面図である。
第３図は三極管の等価回路図である。
第４図は本発明の冷陰極真空管に用いられる電子放出素
子の他の実施例を示す概略的断面図である。
１．７・・・電極、２・・・Ｎ型Ｓｔ基板、３・・・Ｐ
領域、４・・・Ｐ領域、５・・・Ｐ＋１領域、６．８．
１０・・・絶縁層、９・・・グＩＪ ノド電極、１１・
・・グレート電極、１２・・・低仕事関数材料膜。
代理人 弁理士 山 下 穣 平
第１図
第２図
ｈFIG. 1 is a schematic sectional view showing an embodiment of the cold cathode vacuum tube of the present invention. FIG. 2 is a schematic cross-sectional view of a PN junction forward bias type electron-emitting device having an extraction electrode. FIG. 3 is an equivalent circuit diagram of a triode. FIG. 4 is a schematic cross-sectional view showing another embodiment of the electron-emitting device used in the cold cathode vacuum tube of the present invention. 1.7... Electrode, 2... N-type St substrate, 3... P
Area, 4...P area, 5...P+1 area, 6.8.
DESCRIPTION OF SYMBOLS 10... Insulating layer, 9... Gu IJ throat electrode, 11.
...Grate electrode, 12...Low work function material film. Agent Patent Attorney Jo Taira Yamashita Figure 1 Figure 2 h
Claims (2)
域を接合させた電子放出素子の電子放出部上に電子放出
口が設けられた絶縁層を介して形成されたプレート電極
とを有する冷陰極真空管。(1) It has a plate electrode formed on an electron emitting part of an electron emitting element in which a work function reducing material region is bonded to a P-type semiconductor region on the electron emitting side via an insulating layer provided with an electron emitting hole. Cold cathode vacuum tube.
間に、絶縁層を介して形成されるグリッド電極を一又は
二以上積層させた特許請求の範囲第１項記載の冷陰極真
空管。(2) The cold cathode vacuum tube according to claim 1, wherein one or more grid electrodes are laminated with an insulating layer interposed between the electron-emitting part of the electron-emitting device and the insulating layer. .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016147A JP2735118B2 (en) | 1987-01-28 | 1987-01-28 | Cold cathode vacuum tube |
| US07/515,352 US4994708A (en) | 1986-07-01 | 1990-04-30 | Cold cathode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016147A JP2735118B2 (en) | 1987-01-28 | 1987-01-28 | Cold cathode vacuum tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63187535A true JPS63187535A (en) | 1988-08-03 |
| JP2735118B2 JP2735118B2 (en) | 1998-04-02 |
Family
ID=11908388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62016147A Expired - Fee Related JP2735118B2 (en) | 1986-07-01 | 1987-01-28 | Cold cathode vacuum tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2735118B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2637126A1 (en) * | 1988-09-23 | 1990-03-30 | Thomson Csf | COMPONENT SUCH AS DIODE, TRIODE OR FLAT AND INTEGRATED CATHODOLUMINESCENT DISPLAY DEVICE, AND MANUFACTURING METHOD |
| JPH02312153A (en) * | 1989-05-26 | 1990-12-27 | Sharp Corp | Manufacture of semiconductor transistor |
| US6177774B1 (en) | 1998-02-27 | 2001-01-23 | Fanuc Limited | Motor controller based on PWM system |
| JP2008016451A (en) * | 2006-06-30 | 2008-01-24 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | Small field emission element and its manufacturing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101455262B1 (en) * | 2013-09-03 | 2014-10-31 | 고려대학교 산학협력단 | Vertical vaccum electronic device, method thereof and integrated device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
| JPS499255A (en) * | 1972-05-17 | 1974-01-26 | ||
| JPS518874A (en) * | 1974-07-10 | 1976-01-24 | Hitachi Ltd | |
| JPS5164366A (en) * | 1974-12-02 | 1976-06-03 | Sony Corp | Handotaiinkyokuno seizohoho |
| JPS56134452A (en) * | 1980-03-26 | 1981-10-21 | Toshiba Corp | Cold-cathode active element |
-
1987
- 1987-01-28 JP JP62016147A patent/JP2735118B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
| JPS499255A (en) * | 1972-05-17 | 1974-01-26 | ||
| JPS518874A (en) * | 1974-07-10 | 1976-01-24 | Hitachi Ltd | |
| JPS5164366A (en) * | 1974-12-02 | 1976-06-03 | Sony Corp | Handotaiinkyokuno seizohoho |
| JPS56134452A (en) * | 1980-03-26 | 1981-10-21 | Toshiba Corp | Cold-cathode active element |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2637126A1 (en) * | 1988-09-23 | 1990-03-30 | Thomson Csf | COMPONENT SUCH AS DIODE, TRIODE OR FLAT AND INTEGRATED CATHODOLUMINESCENT DISPLAY DEVICE, AND MANUFACTURING METHOD |
| EP0362017A1 (en) * | 1988-09-23 | 1990-04-04 | Thomson-Csf | Device such as diode, triode or flat and integrated cathodoluminescent display device, and manufacturing process |
| US4986787A (en) * | 1988-09-23 | 1991-01-22 | Thomson-Csf | Method of making an integrated component of the cold cathode type |
| JPH02312153A (en) * | 1989-05-26 | 1990-12-27 | Sharp Corp | Manufacture of semiconductor transistor |
| US6177774B1 (en) | 1998-02-27 | 2001-01-23 | Fanuc Limited | Motor controller based on PWM system |
| JP2008016451A (en) * | 2006-06-30 | 2008-01-24 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | Small field emission element and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2735118B2 (en) | 1998-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2960659A (en) | Semiconductive electron source | |
| US4683399A (en) | Silicon vacuum electron devices | |
| US3581151A (en) | Cold cathode structure comprising semiconductor whisker elements | |
| US5252833A (en) | Electron source for depletion mode electron emission apparatus | |
| JPS60241626A (en) | Display unit having electron current generating semiconductor device | |
| HK84091A (en) | Semiconductor device for producing an electron beam | |
| US4801994A (en) | Semiconductor electron-current generating device having improved cathode efficiency | |
| US3150282A (en) | High efficiency cathode structure | |
| ES8402463A1 (en) | Electron sources and equipment having electron sources | |
| EP3584818B1 (en) | Restriction of free electrons in multiplier semiconductor structure | |
| JPS63187535A (en) | Cold cathode vacuum tube | |
| US4994708A (en) | Cold cathode device | |
| US4060823A (en) | Electron-emissive semiconductor devices | |
| US4910562A (en) | Field induced base transistor | |
| US4751423A (en) | Photocathode having a low dark current | |
| US6198210B1 (en) | Electron tube having a semiconductor cathode with lower and higher bandgap layers | |
| JPS62229731A (en) | Semiconductor device for electron beam generation | |
| US3364367A (en) | Solid state electron multiplier including reverse-biased, dissimilar semiconductor layers | |
| JPS63119131A (en) | Electron emitting element | |
| JP3153340B2 (en) | Semiconductor device | |
| JP2663384B2 (en) | Cold cathode vacuum tube | |
| JP2014523099A (en) | Semiconductor devices for electron emission in vacuum. | |
| US6340859B1 (en) | Cold cathode electron emission device for activating electron emission using external electric field | |
| Faulkner et al. | A practical p‐n junction cold cathode | |
| CN110690269B (en) | Bidirectional thyristor and electronic product |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |