JPS63185898A - Highly resistant cdte crystal and preparation thereof - Google Patents
Highly resistant cdte crystal and preparation thereofInfo
- Publication number
- JPS63185898A JPS63185898A JP16253187A JP16253187A JPS63185898A JP S63185898 A JPS63185898 A JP S63185898A JP 16253187 A JP16253187 A JP 16253187A JP 16253187 A JP16253187 A JP 16253187A JP S63185898 A JPS63185898 A JP S63185898A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- cdte
- impurity
- highly resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 64
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000003708 ampul Substances 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高抵抗ＣｄＴｅ単結晶及びその作成方法ＫＩ
！Ａするものであり、％には従来より簡便に高抵抗Ｃｄ
Ｔｅ単結晶を作成する技術に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a high resistance CdTe single crystal and a method for producing the same.
! A, and % is more convenient than conventional high resistance Cd.
This invention relates to a technique for creating a Te single crystal.
本発明により、高抵抗ＣｄＴ・単結晶を用いたデバイス
、例えば放射線検出器、ポッケルスセル（電気光学変調
器）の機能向上が実現しうる。According to the present invention, it is possible to improve the functionality of devices using high-resistance CdT single crystals, such as radiation detectors and Pockels cells (electro-optic modulators).
放射線検出器としては、１０９９１以上の高抵抗ＣｄＴ
ｅ単結晶が近時必要とされている。また、ポッケルスセ
ルでは、１０＠Ωα以上の高抵抗ＣｄＴｅ単結晶が必要
とされ【いる。As a radiation detector, high resistance CdT of 10991 or more is used.
e-single crystals are required these days. Furthermore, a Pockels cell requires a high resistance CdTe single crystal of 10@Ωα or more.
高抵抗ＣｄＴｅ単結晶の作成方法としては、Ｃｄ蒸気圧
制御による修正型垂直ブリッジマン法、Ｔ ＨＭ （１
’ｒａｖｅｌｌｉｎｇ ）（ｅａｔｅｒ Ｍｅｔｈｏｄ
）法等が提案されている。例えば、ＴＨＭ法でＣ１を
ドープしたものが実用化されている。Methods for producing high-resistance CdTe single crystals include the modified vertical Bridgman method using Cd vapor pressure control, THM (1
'ravelling ) (eater Method
) laws, etc. have been proposed. For example, materials doped with C1 using the THM method have been put into practical use.
これらの方法は揮発しゃすいＣｄの蒸発を抑制し、結晶
中のＣｄ空孔の発生を防止せんとするものである。ＴＨ
Ｍ法を例にとると、真空アンプル内に予じめ合成したＣ
ｄＴ・多結晶及びＴｅと、蒸気圧制御用Ｃｄとが封入さ
れる。このアンプルを所定の温度分布を持つ炉内に設置
し、アンプルを降下、あるいは炉を上昇させることによ
り一度Ｔ＠Ｆ！！ｉ体に溶解させたＣｄＴ・を単結晶と
して再析出せしめるものである。しかしながら、この方
法は結晶成長速度が遅く、特殊なアンプルを必要とし、
加熱炉の温度管理が複雑となり、総じて操作が難しい。These methods are aimed at suppressing the evaporation of volatile Cd and preventing the generation of Cd vacancies in the crystal. T.H.
Taking the M method as an example, C synthesized in advance in a vacuum ampoule is
dT polycrystal, Te, and Cd for vapor pressure control are sealed. This ampoule is placed in a furnace with a predetermined temperature distribution, and by lowering the ampoule or raising the furnace, T@F! ! CdT dissolved in the i-form is redeposited as a single crystal. However, this method has a slow crystal growth rate and requires special ampoules.
Temperature control of the heating furnace is complicated and operation is generally difficult.
歩留りも悪い。修正型ブリッジマン法とて状況は同様で
ある。Yield is also poor. The situation is similar with the modified Bridgman method.
発明の目的
本発明は、従来から一般的に使用されている単結晶育成
設備を用いて、簡便に高抵抗ＣｄＴｅ単縛晶を作成する
方法の確立を目的とする。OBJECTS OF THE INVENTION The purpose of the present invention is to establish a method for easily producing high-resistance CdTe single bound crystals using conventional single crystal growth equipment.
発明の・慨要
本＃、明者等は上記目的に向は研究を重ねた結果、■
ドープ剤として工”ｎを用い、添加する不純物Ｉｎの濃
度を１ｐＰｍ（ｔｆ）以下とすることにより結晶中Ｉｎ
は（Ｌ ７ ｐｐｍ以下となり不純物濃度は低くなり、
デバイス作成上の影響も小さくなること、及び
（り ＣｄＴｅ単結晶はＴｅ過剰であることが必要で
あり、そのためには、Ｃｄ及びＴｅＪｆｉ料の組成比（
ｗ、子比）Ｃｄ／Ｔｅの比がＣＬ９９８〜ｔ００２とす
ること
によって従来得られなかった高品質の高抵抗ＣｄＴｅ単
結晶の作成が可能であるとの知見を得た。一般に、不純
物を添加する場合、１ｐｐｍｃｘｉ）を超えて多量に添
加すると、単結晶の性質への悪影響が生じ、デバイスの
作製上支障をきたす恐れがあるが、１ ｐｐｍ （重ｆ
）以下のＩｎ添加では、生成するＣｄＴｅ単結晶内のＩ
ｎ濃度は約１７ｐｐｍ （重量）以下であり、不純物濃
度は充分に低く、デバイス作製上影響は無視することが
出来る。Summary of the invention As a result of repeated research aimed at the above purpose, the authors have
By using dopant as a dopant and controlling the concentration of added impurity In to 1 pPm (tf) or less, In
(L 7 ppm or less, the impurity concentration is low,
It is necessary that the influence on device fabrication is small and that the CdTe single crystal has an excess of Te.
It was found that by setting the Cd/Te ratio to CL998 to t002, it was possible to create a high-quality, high-resistance CdTe single crystal that could not be obtained conventionally. In general, when adding impurities in a large amount exceeding 1 ppm cxi), it may have an adverse effect on the properties of the single crystal and cause problems in device fabrication.
) In the following In addition, I in the CdTe single crystal to be produced is
The n concentration is about 17 ppm (by weight) or less, and the impurity concentration is sufficiently low so that the influence on device fabrication can be ignored.
こうして、Ｔｅ過剰要件と不純物Ｉｎの微ｉ添加要件が
組合わさって、通常的なアングル及び加熱炉を使用して
、新規な高抵抗ＣｄＴｅ単結晶を簡便に作成し５ること
が判明したものである。In this way, it was found that by combining the requirement for excess Te and the requirement for the addition of a small amount of In as an impurity, a new high-resistance CdTe single crystal can be easily produced using a conventional angle and heating furnace5. be.
斯くして、本発明は、
１）Ｃｄ／’］’ｅＪｉＣ子比がＴｅ過剰であり且っ［
Ｌ７ｐｐｍ（重ｆ）以下のＩｎを含有する高抵抗ＣｄＴ
＠単結晶、及び
２）ＣｄＴｅ単結晶を結晶成長用アンプル内で該アンプ
ルを加熱及び冷却して成長せしめることにより高抵抗Ｃ
ｄＴｓ結晶を作成する方法において、不純物Ｉｎを１ｐ
ｐｍ（重１ｐｐｍ（重量）以下の濃度において添加する
ことを特徴とする高抵抗ＣｄＴｅ結晶の作成方法
を提供する。Thus, the present invention provides the following features: 1) Cd/']'eJiC ratio is excessive Te, and [
High resistance CdT containing In less than L7ppm (weight f)
@single crystal, and 2) high resistance C by growing CdTe single crystal in a crystal growth ampoule by heating and cooling the ampoule.
In the method of creating a dTs crystal, the impurity In is added to 1p.
Provided is a method for producing a high-resistance CdTe crystal, characterized in that CdTe is added at a concentration of 1 ppm (by weight) or less.
一般の（：ｄ’ｌ’ｅ単結晶は、高温部、遷移部及び低
温部という所定の温度分布を有する電気炉において原料
を収納するアンプルと炉との相対的垂直移替を与えるこ
とにより高温部で原料を融解しそして生じた融液な次第
に凝固せしめて単結晶化される。垂直ブリッジマン法に
おいてはアンプルが降下され、他方垂直グラデイエント
フリージング法におい℃は炉が冷却される。Ｃｄ及び’
ｒｅｉ料は目標とする組成に応じて秤量され、アンプル
内に装入されそして真空封止される。A general (: d'l'e single crystal) can be produced at a high temperature by providing a relative vertical transition between the ampoule containing the raw material and the furnace in an electric furnace that has a predetermined temperature distribution of a high temperature zone, a transition zone, and a low temperature zone. In the vertical Bridgman process, the ampoule is lowered, while in the vertical gradient freezing process, the furnace is cooled to 0°C.Cd and '
The rei material is weighed according to the target composition, loaded into ampoules and vacuum sealed.
従来技術で述べたように、本発明の対象とする高抵抗（
：ｄＴｅ単結晶は上記のような一般的結晶成育装置では
作成困難なため特別な炉及びアンプル構成が採用されて
いた。本発明は、そうした特別な装置を用いることなく
、上記垂直ブリッジマン法、垂直グラディエンド７リー
ジング法に代表されるような、 ＣｄＴｅ単結晶成長用
アンプルの加熱及び冷却による簡易な結晶育成装置を使
用して高抵抗ＣｄＴｅ単結晶を作成するものである。As described in the prior art, high resistance (
:DTe single crystals are difficult to produce using the above-mentioned general crystal growth equipment, so special furnace and ampoule configurations have been adopted. The present invention uses a simple crystal growth apparatus by heating and cooling an ampoule for CdTe single crystal growth, such as the vertical Bridgman method and vertical gradient 7 reasing method, without using such special equipment. A high-resistance CdTe single crystal is produced using the following steps.
不発明に従えば、アングル内へのｃｄ及びＴ。According to the invention, CD and T into the angle.
原料の秤量に際して作成ＣｄＴ・単結晶がＴ・過剰とな
るようＣｄ及びＴ・原料の量が調整される。When weighing the raw materials, the amounts of Cd and T raw materials are adjusted so that the produced CdT single crystal has an excess of T.
Ｃｄの蒸気圧は（：ｄ’ｌ’ｅの融点である１０９２℃
においてＴｅの蒸気圧に比較して１桁太ぎ＜、１気圧位
である。このため、結晶成長中、アンプル内の上方空間
にＣｄが揮散する。従って、アンプルに装入されるＣｄ
及びＴｅ原料の組成比（原子比）をα９９８〜ｔ００２
の範囲内にしておけばＣｄ蒸発の結果としてＴ・過剰の
単結晶が作成される。Ｃｄ蒸発菫は、アンプルの寸法形
態及び温度条件や真空条件等に依存して決る。最終的に
作成される（：：ｄＴｅ単結晶においてＴｅ過剰状態が
得られれば本発明目的に充分である。The vapor pressure of Cd is (1092℃ which is the melting point of d'l'e)
Compared to the vapor pressure of Te, it is one order of magnitude thicker than the vapor pressure of Te. Therefore, during crystal growth, Cd volatilizes in the upper space within the ampoule. Therefore, the Cd charged in the ampoule
And the composition ratio (atomic ratio) of Te raw material is α998~t002
If it is kept within the range, a single crystal with an excess of T will be created as a result of Cd evaporation. The amount of Cd evaporated depends on the size and form of the ampoule, temperature conditions, vacuum conditions, etc. It is sufficient for the purpose of the present invention if a Te-excess state is obtained in the finally produced (::dTe single crystal).
原料Ｃｄ及びＴｅに対して不純物としてＩｎがｌｐｐｍ
１ｃ−ｆｆｉ）以下添加される。ＩｎはＣｄＴｅ単結晶
を作成するに際してＣｄ空孔を補償するドーパントとし
て知られている。しかし、Ｉｎを多量に添加すると、Ｃ
ｄＴｅ単結晶の移動度の減少その他悪影響が発生しやす
い。本発明においては、Ｉｎ不純物は１ ｐｐｍ （重
り以下、好ましくは１２〜０．６ ｐｐｍ （重量）と
いう極微量において添加される。この添加濃度では、不
純物ＩｎのＣｄＴｅ単結晶内のジ度は約０．７ ｐｐｍ
以下となり、上記のような影響を無視することが出来る
に充分小さい。In is 1ppm as an impurity with respect to raw materials Cd and Te.
1c-ffi) or less. In is known as a dopant that compensates for Cd vacancies when creating a CdTe single crystal. However, when a large amount of In is added, C
Decreased mobility of the dTe single crystal and other adverse effects are likely to occur. In the present invention, the In impurity is added in an extremely small amount of 1 ppm (weight) or less, preferably 12 to 0.6 ppm (weight). At this addition concentration, the degree of impurity In in the CdTe single crystal is approximately 0.7 ppm
It is small enough that the above-mentioned influence can be ignored.
更に、結晶中Ｉｎを［Ｌ１ｐｐｍ以下にすると、不純物
濃度はデバイス作成上の影響を、より完全に無視するに
充分低いことを保証する。Further, by reducing the In content in the crystal to [L1 ppm or less, it is ensured that the impurity concentration is low enough to more completely ignore the influence on device fabrication.
こうして、Ｔｅ過剰と極微量Ｉｎ添加という要件が組合
わさって、後に実施例に示すように、５Ｘ１０’〜１０
９、好ましくは１０’〜１０”Ω譚の高い抵抗のＣｄＴ
ｅ単結晶が得られる。また、この高抵抗領域は単結晶の
土中下位１はぼ全域で維持されているので、基板等そこ
から切出される部材の収率も高い。In this way, the requirements of excessive Te and addition of a very small amount of In combine to produce a 5X10' to 10
9. High resistance CdT, preferably between 10' and 10'' Ω.
e A single crystal is obtained. In addition, since this high resistance region is maintained throughout almost the entire area of the single crystal soil, the yield of parts such as substrates cut from there is also high.
以上はＣｄＴｓについてのみ言及したが、本発明はＣｄ
Ｔｅのような半導体を構成する構成元素のうちの一元素
の蒸気圧が高い場合で、単結晶中に欠陥（空孔）を生じ
やすい場合に適用し５るものであり、ＣｄＴｅ、）（ｇ
ＣｄＴｅ、 ｚｎＴｅ、ＨｇＴ６゜（：ｄ３ｅ等のＩｔ
−Ｖｌ族化合物半導体、或いはこの釉の■−Ｖ族化合物
半導体に対しても応用可能であることは明らかである。Although only CdTs has been mentioned above, the present invention
It is applied when one of the constituent elements constituting a semiconductor such as Te has a high vapor pressure and defects (vacancies) are likely to occur in the single crystal.
CdTe, znTe, HgT6゜(:d3e etc.)
It is clear that this glaze can also be applied to -Vl group compound semiconductors or -V group compound semiconductors of this glaze.
内径２インチの石英製結晶成長用アンプルにｃｄとＴ・
とを装入し、Ｉｎを表Ｉに示す濃度で添加し、真空排気
した後封止した。A CD and T-
and In was added at the concentration shown in Table I, and after evacuation, the container was sealed.
このアンプルを１ｐｐｍ（重量５０℃に設定された上段
炉と８００℃に設定した下段炉とから成る電気炉を用い
て垂直ブリッジマン法によって結晶成長せしめた。垂直
ブリッジマン法のアンプル降下速度は１ ｍ ／ Ｈｒ
そして温度勾配は３℃／ｃＩｒＬとした。Crystals of this ampoule were grown at 1 ppm (weight) by the vertical Bridgman method using an electric furnace consisting of an upper furnace set at 50°C and a lower furnace set at 800°C. m/hr
The temperature gradient was 3°C/cIrL.
作成されたＣｄＴｅ単結晶は前述したようにｃｄの揮散
によりＴｅＡ剰となっている。作成された２インチ（：
：ｄＴｅ単結晶についてＩｎｍ度分析と比抵抗測定を行
った。結果を表工に示す。本発明により作成されたロッ
ト番号Ｃの（：：ｄ’ｌ’ｅ単結晶はそのほぼ全域で５
Ｘ１０’〜１０１Ωαの高い比抵抗を示しセして工ｎ濃
度は約０．７ ｐｐｍ （重量）以下であり、ロット番
号Ａ、Ｂに比べ高抵抗の単結晶が得られた。ロット番号
りのものはより優れた性質を示す。The produced CdTe single crystal has a surplus of TeA due to volatilization of CD, as described above. 2 inches created (:
: Inm degree analysis and specific resistance measurement were performed on the dTe single crystal. Show the results to the table worker. The (::d'l'e) single crystal of lot number C produced according to the present invention has a
A single crystal exhibiting a high specific resistance of X10' to 101 Ωα and a concentration of about 0.7 ppm (weight) or less, and having a higher resistance than lot numbers A and B, was obtained. Those with higher lot numbers exhibit better properties.
グツデイエントフリージング法を用いて作成した（：ｄ
Ｔｅ単結晶も同様の結果を示した。また、３インチ径の
ＣｄＴｅ単結晶でも同轡の結果が得られた。Created using the natural freezing method (:d
Te single crystal also showed similar results. Further, the same results were obtained with a CdTe single crystal having a diameter of 3 inches.
表 Ｉ
冗
ｉｅｆ Ａ １２ １〜８
１０” 〜１０’例
Ｂ ３ α７〜４０ １０
’本 Ｃ１α１〜（Ｌ７ ５Ｘ１ｏ’ 〜１ｏ”
発
発明の効果
従来に較べ簡便な方法で高抵抗ＣｄＴｅ単結晶を作成す
ることが可能となった。不純物ＩｎのＣｄＴ＠単結晶内
の濃度は約０．７ ｐｐｍ以下、好ましくはαＩｐｐｍ
（重り以下であり、不純物無添加の結晶内残留不純物濃
度と同程度：Ｃ抑えて高抵抗化の実現に成功したので、
本単結晶を用いた、例えば放射線検出器、ポッケルスセ
ル等のデバイスの機能向上に大きく寄与するものである
。Table I Redundancy A 12 1-8
10"~10'Example B 3 α7~40 10
'Book C1α1 ~ (L7 5X1o'~1o"
Effects of the invention It has become possible to produce a high resistance CdTe single crystal using a simpler method than in the past. The concentration of impurity In in CdT@ single crystal is about 0.7 ppm or less, preferably αIppm
(It is less than the weight and is about the same as the residual impurity concentration in the crystal without adding impurities: Because we succeeded in achieving high resistance by suppressing C,
This will greatly contribute to improving the functionality of devices using this single crystal, such as radiation detectors and Pockels cells.
Claims (1)
ｍ（重量）以下のＩｎを含有する高抵抗ＣｄＴｅ単結晶
。 ２）ＣｄＴｅ単結晶を結晶成長用アンプル内で該アンプ
ルを加熱及び冷却して成長せしめることにより高抵抗Ｃ
ｄＴｅ結晶を作成するに当り、不純物Ｉｎを１ｐｐｍ（
重量）以下の濃度において添加することを特徴とする高
抵抗ＣｄＴｅ結晶の作成方法。 ３）Ｃｄ及びＴｅ原料の量をＣｄ／Ｔｅの原子比が０．
９９８〜１．００２である特許請求の範囲第２項記載の
方法。[Claims] 1) Cd/Te atomic ratio is excessive Te and 0.7 pp
High resistance CdTe single crystal containing In of m (weight) or less. 2) High resistance C is grown by growing a CdTe single crystal in a crystal growth ampoule by heating and cooling the ampoule.
When creating a dTe crystal, the impurity In was added to 1 ppm (
A method for producing a high-resistance CdTe crystal, characterized in that it is added at a concentration below (weight). 3) The amounts of Cd and Te raw materials are adjusted so that the Cd/Te atomic ratio is 0.
998-1.002. The method according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP87113852A EP0261647A3 (en) | 1986-09-26 | 1987-09-22 | High resistivity cdte crystal and process for producing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-226366 | 1986-09-26 | ||
| JP22636686 | 1986-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63185898A true JPS63185898A (en) | 1988-08-01 |
Family
ID=16844016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16253187A Pending JPS63185898A (en) | 1986-09-26 | 1987-07-01 | Highly resistant cdte crystal and preparation thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63185898A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010150138A (en) * | 2010-03-23 | 2010-07-08 | Nippon Mining & Metals Co Ltd | CdTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL FOR ELECTRIC OPTICAL ELEMENT |
| JP2013207004A (en) * | 2012-03-27 | 2013-10-07 | Gigaphoton Inc | Laser device |
| JP2013207003A (en) * | 2012-03-27 | 2013-10-07 | Gigaphoton Inc | Laser device |
| WO2020235124A1 (en) | 2019-05-17 | 2020-11-26 | Ｊｘ金属株式会社 | Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate |
| WO2020235123A1 (en) | 2019-05-17 | 2020-11-26 | Ｊｘ金属株式会社 | Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate |
-
1987
- 1987-07-01 JP JP16253187A patent/JPS63185898A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010150138A (en) * | 2010-03-23 | 2010-07-08 | Nippon Mining & Metals Co Ltd | CdTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL FOR ELECTRIC OPTICAL ELEMENT |
| JP2013207004A (en) * | 2012-03-27 | 2013-10-07 | Gigaphoton Inc | Laser device |
| JP2013207003A (en) * | 2012-03-27 | 2013-10-07 | Gigaphoton Inc | Laser device |
| WO2020235124A1 (en) | 2019-05-17 | 2020-11-26 | Ｊｘ金属株式会社 | Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate |
| WO2020235123A1 (en) | 2019-05-17 | 2020-11-26 | Ｊｘ金属株式会社 | Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate |
| US11967659B2 (en) | 2019-05-17 | 2024-04-23 | Jx Metals Corporation | Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate |
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