JPS6318286A - Radiation detector - Google Patents
Radiation detectorInfo
- Publication number
- JPS6318286A JPS6318286A JP16184786A JP16184786A JPS6318286A JP S6318286 A JPS6318286 A JP S6318286A JP 16184786 A JP16184786 A JP 16184786A JP 16184786 A JP16184786 A JP 16184786A JP S6318286 A JPS6318286 A JP S6318286A
- Authority
- JP
- Japan
- Prior art keywords
- scintillator
- detector
- output
- powder
- 2gef
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000012752 auxiliary agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 12
- 238000000137 annealing Methods 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000005355 lead glass Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910020261 KBF4 Inorganic materials 0.000 description 1
- 229910021135 KPF6 Inorganic materials 0.000 description 1
- 229910007549 Li2SiF6 Inorganic materials 0.000 description 1
- 229910017673 NH4PF6 Inorganic materials 0.000 description 1
- 229910020808 NaBF Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001496 lithium tetrafluoroborate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- -1 rare earth oxysulfide Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Landscapes
- Luminescent Compositions (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はＸ線、γ線などの放射線検出器に関する。とく
に、Ｘ＠ＣＴ （コンピユータ化された断層写真）又は
ポジトロンカメラなどに用いる放射線検出器に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a radiation detector for X-rays, gamma rays, etc. In particular, it relates to radiation detectors used in X@CT (computerized tomography) or positron cameras.
［従来の技術］
Ｘ線ＣＴとしては種々のタイプがあるが、通常２０〜１
０００個の性能の揃った放射線検出器を必要とする。[Prior art] There are various types of X-ray CT, but usually 20 to 1
000 radiation detectors with uniform performance are required.
従来、Ｘ、１ＩＣＴなどに用いる放射線検出器としては
、キセノンのガスチェンバーあるいは、ＢＧ○単結晶（
ゲルマニウム酸ビスマス）と光電子増倍管を組合せたも
の、ＣｓＩ：ＴＱ単結晶またはＣｄＷＯ４単結晶とホト
ダイオードを組合せたものが用いられてきた。キセノン
ガスチェンバーは検出器内に高圧のキセノンガスを封入
するために厚い窓が必要であり、かっ１素子当り２枚の
コリメータ抜が入っているため、Ｘ線の利用効率は組合
わせて用いられるが、光電子増倍管やそれに付ずいした
高圧電源が必要となるため多素子化が困難である。Conventionally, radiation detectors used for X, 1 ICT, etc. have been xenon gas chambers or BG○ single crystals (
A combination of CsI:TQ single crystal or CdWO4 single crystal and a photodiode has been used. The xenon gas chamber requires a thick window to seal high-pressure xenon gas into the detector, and each element has two collimators, so X-rays can be used in combination to increase the efficiency of X-ray utilization. However, since it requires a photomultiplier tube and an associated high-voltage power supply, it is difficult to increase the number of elements.
ＣＳＩ：Ｔｆｌは、効率は高いが潮解性で、かつ、残光
（Ｘ線を断ってからの発光）現象があり、実用上問題が
ある。Although CSI:Tfl has high efficiency, it is deliquescent and has an afterglow phenomenon (light emission after cutting off X-rays), which poses a practical problem.
またＣ ｄ Ｗ Ｏ４は発光効率が低く、その上、切断
するときに襞間し易く、かつ毒性がある点で問題がある
。Further, C d W O 4 has problems in that it has low luminous efficiency, is prone to creases when cut, and is toxic.
以上に述べた単結晶シンチレータについて共通する欠点
は、単結晶内における発光特性のばらつきがあることで
ある。単結晶は一般に融液から成長させるが、成長過程
で結晶内に沿って、格子欠陥が広がりやすいため、残光
現象が現われたりする。また、シンチレータには活性剤
が加えられることが多いが、これを結晶内に均一に分散
させることが困難である。そのために結晶内に発光むら
が生じる。前述の問題点は、各検出器の特性を合わせる
ことが極めて困難であることを意味する。A common drawback of the single crystal scintillators described above is that there are variations in light emission characteristics within the single crystal. Single crystals are generally grown from a melt, but lattice defects tend to spread along the crystal during the growth process, resulting in an afterglow phenomenon. Furthermore, although an activator is often added to scintillators, it is difficult to uniformly disperse this within the crystal. This causes uneven light emission within the crystal. The aforementioned problems mean that it is extremely difficult to match the characteristics of each detector.
−７０４７６に蛍光体粒子をシンチレータとして使用す
る放射線検出器を提案した６通常Ｘ線ＣＴ用の放射線検
出器において断面像を得るためには、その幅は１〜３ｍ
ｍ程度で、長さは２０＋ｍｎ程度である。それ故に一つ
の放射線検出器の中の蛍光体粒子は、その粒径にもよる
が例えば３０万個程度である。個々の蛍光体粒子の特性
は、少しずつ異なっている可能性はあるが、十分に混合
して一つのシンチレータとして使用することにより、シ
ンチレータとしての特性のばらつきは、粒子数の平方根
分の−、すなわち０．０１％程度となり満足すべき結果
が得られる。-70476 proposed a radiation detector that uses phosphor particles as a scintillator 6 In order to obtain a cross-sectional image in a radiation detector for normal X-ray CT, its width is 1 to 3 m.
m, and the length is about 20+mn. Therefore, the number of phosphor particles in one radiation detector is, for example, about 300,000, depending on the particle size. The characteristics of individual phosphor particles may differ slightly, but by mixing them sufficiently and using them as a single scintillator, the variation in scintillator characteristics can be reduced to - the square root of the number of particles. In other words, it is about 0.01%, and a satisfactory result can be obtained.
この放射線検出器について第１図を用いて説明はる。入
射ｘａ１がアルミニューム薄膜からなる蓋５と光散乱層
４を透過した後、シンチレータ粒子層２（けい光体をポ
リスチレンで固めたもの）を発光させる。この発光が、
空間層７と２次放射線防止層８（鉛ガラス）を経た後、
ホトダイオード３に到達し、電流に変換される。また、
シンチレータ粒子層の発光を効率良くホトダイオードに
導くために、容器６の全体が反射膜でおおわれている。This radiation detector will be explained using FIG. After the incident xa1 passes through the lid 5 made of an aluminum thin film and the light scattering layer 4, the scintillator particle layer 2 (a phosphor made of polystyrene) emits light. This luminescence is
After passing through the space layer 7 and the secondary radiation prevention layer 8 (lead glass),
It reaches the photodiode 3 and is converted into a current. Also,
In order to efficiently guide the light emitted from the scintillator particle layer to the photodiode, the entire container 6 is covered with a reflective film.
このように検出器では、単結晶シンチレータとホトダイ
オードと組合せた検出器に比べ約２倍の出力が得られ、
頭部Ｘ線ＣＴ用の検出器として極めて望ましいものとな
る。しかし、全身用の検出器に適用するには、やや問題
がある。それは、頭部用と全身用の画像処理方式が異な
るためである。第１図においてシンチレータ層２の発光
特性は均質であるが、光がホトダイオード３に到達する
迄に空間層７をおおっている反射膜に衝突を繰り返す。In this way, the detector can obtain approximately twice the output compared to a detector that combines a single crystal scintillator and a photodiode.
This makes it extremely desirable as a detector for head X-ray CT. However, there are some problems in applying it to a whole-body detector. This is because the image processing methods for the head and the whole body are different. In FIG. 1, the light emission characteristics of the scintillator layer 2 are homogeneous, but the light repeatedly collides with the reflective film covering the spatial layer 7 before reaching the photodiode 3.
したがって、反射膜において反射率のむらがあると入射
したＸ線の正確な情報が得られない。そのためには、こ
のような検出器を多素子化した場合に、各素子間におい
て特性のばらつきが生じることになる。その結果、この
検出器を用いて得られた再生像には、リングむらやアー
チファクトが生じる。Therefore, if there is uneven reflectance in the reflective film, accurate information about incident X-rays cannot be obtained. For this reason, when such a detector has multiple elements, variations in characteristics will occur among the elements. As a result, ring unevenness and artifacts occur in the reconstructed image obtained using this detector.
この問題を解決するためには、第２図のような構造にす
ることが必要となる。すなわち、真ちゅうからなる容器
６の底部にシリコンホトダイオード３が配置され、容器
６の内面にはアルミニウームにより光反射面が形成され
ている。容器６内にＩこ
はシリコンホトダイオード３の上が鉛ガラス８が配置さ
れ、さらにその上にシンチレータ層２が形成されている
。鉛ガラスはシンチレータからでる蛍光Ｘ線をカットす
るために設けられている。In order to solve this problem, it is necessary to create a structure as shown in FIG. That is, a silicon photodiode 3 is placed at the bottom of a container 6 made of brass, and a light reflecting surface made of aluminum is formed on the inner surface of the container 6. Inside the container 6, a lead glass 8 is placed on top of the silicon photodiode 3, and a scintillator layer 2 is further formed on top of the lead glass 8. The lead glass is provided to block fluorescent X-rays emitted from the scintillator.
第２図のような構造において、シンチレータ粒子層を用
いた場合には、粒子層自身が光学的に不透明であるため
、発光をシリコンホトダイオードに効率良く導くことが
困難である。そのために、効率の高いＧ ｄ ２０２
Ｓ ： Ｐｒ、 Ｃｅ、 Ｆシンチレータを用いても、
単結晶シンチレータＣｄＷ○４とシリコンホトダイオー
ドを組合せた検出器とほぼ同程度の信号出力になってし
まうという問題が生じた。出力を増大するには、希土類
オキシサルファイドシンチレータを単結晶にして透明化
すれば良いのであるが、ジャーナル・オブ・アプライド
・フィジックス（Ｊ 、 Ａｐｐｌ、 Ｐｈｙｓ、 ）
４２巻。In the structure shown in FIG. 2, when a scintillator particle layer is used, since the particle layer itself is optically opaque, it is difficult to efficiently guide light emission to the silicon photodiode. Therefore, the highly efficient G d 202
S: Even if Pr, Ce, F scintillators are used,
A problem arose in that the signal output was approximately the same as that of a detector combining a single crystal scintillator CdW*4 and a silicon photodiode. In order to increase the output, it is possible to make the rare earth oxysulfide scintillator into a single crystal and make it transparent.
Volume 42.
３０４９頁（１９７１）に記載の方法を用いても、数ミ
リ角の単結晶が得られるにすぎない。Even if the method described on page 3049 (1971) is used, a single crystal of only a few millimeters square can be obtained.
［発明が解決しようとする問題点］
本発明は、上記の欠点を除いた光出力の高い放射線検出
器を提供することを目的とする。[Problems to be Solved by the Invention] An object of the present invention is to provide a radiation detector with high optical output, which eliminates the above-mentioned drawbacks.
［問題を解決するための手段］
上記目的は、放射線により発光するシンチレータ（Ｌｎ
１−ｘ−ｙＰｒｘンｅｙ）２ｏ２ｓ：（ｘ）（但し、
ＬｎはＧｄ、Ｌａ及びＹからなる群から選ばれた少なく
とも一種の元素、ＸはＦ及びＣΩからなる群から選ばれ
た少なくとも一種の元素を表わし、Ｘは３ＸＩＯ−”く
ｘ〈０．２
ｙは１０−６＜ｙく３Ｘ１０−３（７）範囲ノ値。[Means for solving the problem] The above purpose is to use a scintillator (Ln) that emits light by radiation.
1-x-yPrxney)2o2s:(x)(However,
Ln represents at least one element selected from the group consisting of Gd, La, and Y; X represents at least one element selected from the group consisting of F and CΩ; is a value in the range 10-6<y>3X10-3(7).
Ｘの量は２乃至１０００ＰＰＩＩ＋（重量）で表わされ
る粉末に焼結助剤として、Ｌｉ２０ｅＦ６゜（ＮＨ４）
２ＧｅＦ ６．Ｎａ２ＧａＦ ６．に２ＧｅＦ ６゜Ｎ
ａＰＦＢ、ＫＰＦ６．ＮＨ４ＰＦ６゜Ｎａ５ＡＲＦ６．
に２ＳｉＦＨ，Ｌｉ２ＳｉＦ６ ・２Ｈ２０，Ｎａ２５
ｉＦ ６．ＬｉＦ、ＮａＨＦ ２＋ＫＨＦ ２．ＮＨ４
ＨＦ ２．Ｎａ２ＴｉＦ ６゜（し′
に２ＴｉＦｇ、に２ＺｒＦ［ｌ、（ＮＨ４）ＺｒＦＢ。The amount of
2GeF 6. Na2GaF6. 2GeF 6゜N
aPFB, KPF6. NH4PF6゜Na5ARF6.
2SiFH, Li2SiF6 ・2H20, Na25
iF6. LiF, NaHF 2+KHF 2. NH4
HF2. Na2TiF 6゜(shi' 2TiFg, 2ZrF[l, (NH4)ZrFB.
ＭｇＳｉＦｇ、５ｒＳｉＦａ、ＬｉＢＦ４．ＮａＢＦ。MgSiFg, 5rSiFa, LiBF4. NaBF.
及びＫＢＦ４の群からなる少なくとも一種を０．００１
〜１０重景％加え、これを金属製の容器に詰めて真空封
止して熱間静水圧加圧（Ｈｏｔｉｓｏｓｔａｔｉｃ Ｐ
ｒｅｓｓｉｎｇ以下ＨＩＰと略す）シ、更にアニール
してなる透光性焼結体シンチレータと該シンチレータの
発光を検知する光検出器と組合せた放射線検出器によっ
て達成される。and 0.001 of at least one member from the group KBF4.
~10% of the weight was added, this was packed in a metal container, vacuum sealed, and hot isostatic pressurized (Hotisostatic P).
(hereinafter abbreviated as HIP), and a radiation detector that is combined with an annealed translucent sintered scintillator and a photodetector that detects the light emitted from the scintillator.
［作用コ
透光性のある焼結体は焼結助剤０．００１〜１０重量％
加え、圧力が５００〜２０００気圧、温度が８００〜１
７００℃でＨＩＰすることによって得られる。但しこの
条件において、圧力が低い場合は当然、高温でＨＩＰす
ることが必要である。好ましいＨＩＰ条件は焼結助剤の
添加量が０．０１〜４重量％、温度が１１００〜１５０
０℃、圧力が８００〜１８００気圧テアル。ＨＩＰに用
いる金属製容器の材質としては高温で変形（軟化）容易
な金属、例えば純鉄、ステンレススチール、ニッケルお
よび白金などが良い。[Operation: The translucent sintered body contains a sintering aid of 0.001 to 10% by weight.
In addition, the pressure is 500 to 2000 atm and the temperature is 800 to 1
Obtained by HIPing at 700°C. However, under these conditions, if the pressure is low, it is naturally necessary to perform HIP at a high temperature. Preferred HIP conditions include an addition amount of sintering aid of 0.01 to 4% by weight and a temperature of 1100 to 150%.
0°C, pressure 800-1800 atm. The metal container used for HIP is preferably made of metals that are easily deformed (softened) at high temperatures, such as pure iron, stainless steel, nickel, and platinum.
透光性のある焼結体は焼結助剤を加えて、ＨＩＰするこ
とによって得られ、その製造法は例えば次の通りである
６焼結助剤であるＬｉ２ＧｅＦ Ｂを加えた（Ｇｄ
Ｐｒ Ｃｅ
Ｏ，９９９０，００１６Ｘ１０−”）２０２Ｓ（Ｆ）８
７ ｇを大きさ５２φＸ３’ｌｔ （実効容積２１．９
ｃＪ）の純鉄製の容器に詰めてから真空封止シ１．ｍｈ
をＨＩＰ装置装置札入１３００”Ｃ。A translucent sintered body is obtained by adding a sintering aid and HIPing, and the manufacturing method is as follows, for example.
Pr Ce O,9990,0016X10-”)202S(F)8
7g with size 52φX3'lt (effective volume 21.9
cJ) is packed in a pure iron container and then vacuum sealed.1. mh
HIP device device wallet 1300”C.
１５００気圧、３時間の条件でＨＩＰＬ、容器から焼結
体を取出し、更に厚さ１ｍｍの薄板に加工してから、不
活性ガス中において１２００’Ｃで３０分間アニールす
る。前記の方法により
Ｌｉ２ＧｅＦ Ｈの添加量の異なる
検出器を試作し、その発光出力を調べた。その結果、Ｌ
ｉ２ＧｅＦｇ無添加焼結体の発光出力を１００とした場
合、Ｌｉ２０ｅＦ６添加量が０．００１〜１０％の範囲
内の焼結体の発光出力は１１０以上であること、またそ
の最適添加量は０．１％付近で、その発光出力は１６０
であることが明らかになった。前述したＬｉ２ＧｅＦｇ
以外の前記の焼結助剤においても、Ｌｉ２０ｅＦ ６と
ほぼ同様の効果がある。The sintered body was subjected to HIPL at 1500 atm for 3 hours, and the sintered body was removed from the container, further processed into a thin plate with a thickness of 1 mm, and then annealed at 1200'C for 30 minutes in an inert gas. Detectors with different amounts of Li2GeF H added were prototyped using the method described above, and their light emission outputs were investigated. As a result, L
When the light emitting output of the i2GeFg-free sintered body is 100, the light emitting output of the sintered body in which the amount of Li20eF6 added is within the range of 0.001 to 10% is 110 or more, and the optimum amount of addition is 0. At around 1%, its luminous output is 160
It became clear that. The aforementioned Li2GeFg
The other sintering aids mentioned above have almost the same effect as Li20eF6.
ＨＩＰして金属製の容器から取出した試料のままでは発
光出力が十分でないので不活性ガス中においてアニール
することが肝要である。アニール温度は５００〜１５０
０℃の範囲がよく、好ましくは９００〜１３００℃で行
なうとよい、アニールによる発光出力の向上率は焼結助
剤の種類によって多少異なるが、Ａｒガス中において、
アニールした試料のＸ線回折ピークの半値巾はＨＩＰＬ
、ただけの試料に比べ小さくなっていることから、アニ
ールによる発光出力の向上は、結晶化の促進によるもの
と考えれる。If the sample is removed from the metal container after HIPing, the luminous output will not be sufficient, so it is important to anneal the sample in an inert gas. Annealing temperature is 500-150
The temperature range is preferably 0°C, preferably 900 to 1300°C. The rate of improvement in luminous output due to annealing varies somewhat depending on the type of sintering aid, but in Ar gas,
The half width of the X-ray diffraction peak of the annealed sample is HIPL
, which is smaller than the sample with just , it is considered that the improvement in luminous output due to annealing is due to promotion of crystallization.
なお、シンチレータ粉末 に記載されているので割愛する。In addition, scintillator powder I will omit it because it is described in .
［実施例コ
実施例１
シンチレータ粉末
（Ｇｄ Ｐｒ Ｃｅ
Ｏ，９９９０，００１６Ｘ １０− ” ）２０２ Ｓ
： （Ｆ）８７ＨにＬｉ２ＧｅＦ ｇｏ、０８７ｇ
（添加量０．１％）を加え、これを直径５２ｍｍ、長さ
３７ｍｍ、厚さ１ｍａ＋の純鉄製の容器（実効容積２１
．９ｃｊ）に詰め、加熱脱気しながら真空封止する。つ
いで。[Example Example 1 Scintillator powder (Gd Pr Ce O, 9990,0016X 10-'') 202 S
: (F) Li2GeF go to 87H, 087g
(Additional amount: 0.1%) and put it into a pure iron container with a diameter of 52 mm, a length of 37 mm, and a thickness of 1 ma+ (effective volume: 21 mm).
．． 9cj) and vacuum sealed while heating and degassing. Next.
この容器をＨＩＰ装置に入れ、１３００℃、１５０ｏ気
圧、１．５時間の条件でＨＩＰし、冷却後、容器から焼
結体を取出し、更に厚さ１ｎ＋＋ｎの薄板に加工してか
ら、不活性ガス中において１２００℃で３０分間アニー
ルする。こうして得られた焼結体を用いて第２図のよう
な検出器を作り、Ｘ線照射（管電’圧１２０ｋＶ、１０
０ｍＡ）による発光出力を測定した。その結果、この焼
結体を用いた検出器の発光出力は、焼結助剤無添加口で
同様に作製した検出器の発光出力を１００とした場合、
１６０であった。This container was placed in a HIP device and HIPed at 1300°C, 150o atmospheric pressure, and 1.5 hours. After cooling, the sintered body was removed from the container, further processed into a thin plate with a thickness of 1n++n, and then heated using an inert gas Anneal at 1200° C. for 30 minutes in a medium. A detector as shown in Fig. 2 was made using the sintered body obtained in this way, and X-ray irradiation (tube voltage 120 kV, 10
0 mA) was measured. As a result, the light emitting output of a detector using this sintered body is as follows, when the light emitting output of a similarly manufactured detector without the addition of sintering aid is taken as 100.
It was 160.
実施例２
シンチレータ粉末
（Ｇｄ Ｐｒ Ｃｅ
Ｏ，９９９０，００１６Ｘ １０−・）２０２５：（Ｆ
）８７ＨにＬｉ２０ｅＦ 、０．０００８７ｇ （添加
量０．００１％）を加え、後の工程は実施例１と全く同
様に行なった。こうして得られた焼結体を用いて第２図
のような検出器を作り、Ｘ線照射（管電圧１２０ ｋ
Ｖ 、 １００ ｍ Ａ ） ニよる発光出力を測定し
た。この焼結体を用いた検出器の発生出力は焼結助剤無
添加で同様に作製した検出器の発光出力を１００とした
場合１１０であった。Example 2 Scintillator powder (Gd Pr Ce O, 9990,0016X 10-.) 2025: (F
) 0.00087 g (addition amount: 0.001%) of Li20eF was added to 87H, and the subsequent steps were performed in exactly the same manner as in Example 1. A detector as shown in Fig. 2 was made using the sintered body obtained in this way, and X-ray irradiation (tube voltage 120 k
The luminescence output was measured at 100 mA (V, 100 mA). The generated output of a detector using this sintered body was 110 when the luminous output of a detector similarly prepared without the addition of a sintering aid was 100.
実施例３
シンチレータ粉末
（Ｇ ｄ Ｐ ｒ Ｃｅ
Ｏ，９９９０，００１６Ｘ １０−８）・０・Ｓ ：
（Ｆ）８７ｇにＬｉ２０ｅＦ ｇ ８．７ ｇ （添加
量１０％）を加え、後の工程は実施例１と全く同様に行
なった。こうして得られた焼結体を用いて第２図のよう
な検出器を作り、ｘｇ前照射管電圧１２０ｋＶ。Example 3 Scintillator powder (G d Pr Ce O, 9990,0016X 10-8)・0・S:
8.7 g of Li20eF g (addition amount: 10%) was added to 87 g of (F), and the subsequent steps were performed in exactly the same manner as in Example 1. A detector as shown in Fig. 2 was made using the sintered body thus obtained, and the xg pre-irradiation tube voltage was 120 kV.
１００ｍＡ）による発光出力を測定した。この焼結体を
用いた検出器の発生出力は焼結助剤無添加で同様に作製
した検出器の発光出力を１００とした場合１２０であっ
た。100 mA) was measured. The generated output of a detector using this sintered body was 120, when the light emission output of a detector similarly prepared without the addition of a sintering aid was 100.
実施例４〜２６
シンチレータ粉末
（Ｃｄ Ｐｒ Ｃｅ
Ｏ，９９９０，００１６Ｘ １０−・）・０２Ｓ ：
（Ｆ）８７ｇに各種の焼結助剤０．０８７ｇ （添加量
０．１％）をそれぞれ加え、後の工程は実施例１と全く
同様に行なった。こうして得られた各焼結体を用いて第
２図のような検出器を作り、Ｘ線照射（管電圧１２０
ｋ Ｖ 、 １００ ｍ Ａ ） Ｌ：、よる発光出力
を測定した。これらの焼結体を用いた検出器の発光出力
を、焼結助剤無添加で実施例１と同様に作製した焼結体
を用いた検出器の発光出力を１００として下表に相対的
に示す。Examples 4 to 26 Scintillator powder (Cd Pr Ce O, 9990,0016X 10-.)・02S:
0.087 g (addition amount: 0.1%) of various sintering aids were added to 87 g of (F), and the subsequent steps were carried out in exactly the same manner as in Example 1. Using each of the sintered bodies obtained in this way, a detector as shown in Fig. 2 was made, and X-ray irradiation (tube voltage 120
kV, 100 mA) L:, the luminescence output was measured. The light emitting output of the detector using these sintered bodies is shown in the table below relative to the light emitting output of the detector using the sintered body produced in the same manner as in Example 1 without adding a sintering aid as 100. show.
［発明の効果コ
本発明によれば（Ｌｎｘ−ｘ−ｙＰｒ）（Ｃｅｙ）０２
Ｓ ： （Ｘ）の組成を有する透光性の高い焼結体を得
ることができ、これとシリコンホトダイオードと組合せ
た放射線検出器の光出力が従来のものと比べ大巾に増加
する効果がある。[Effects of the Invention According to the present invention (Lnx-x-yPr) (Cey)02
S: A highly translucent sintered body having the composition (X) can be obtained, and the optical output of a radiation detector combining this with a silicon photodiode can be greatly increased compared to conventional ones. .
第１図及び第２図は本発明を説明するための放射線検出
器の断面図である。1 and 2 are cross-sectional views of a radiation detector for explaining the present invention.
Claims (1)
式 （Ｌｎ＿１＿−＿ｘ＿−＿ｙＰｒ＿ｘＣｅ＿ｙ）＿２Ｏ
＿２Ｓ：（Ｘ）（但し、ＬｎはＧｄ、Ｌａ及びＹからな
る群から選ばれた少なくとも一種の元素を表わし、Ｘは
Ｆ及びＣｌからなる群から選ばれた少なくとも一種の元
素を表わし、ｘは３×１０＾−＾８≦ｘ≦０．２、ｙは
１０＾−＾６≦ｙ≦５×１０＾−＾３の範囲の値、Ｘの
量は２乃至１０００ｐｐｍで表わされる粉末に焼結助剤
として、Ｌｉ＿２ＧｅＦ＿６、（ＮＨ＿４）＿２ＧｅＦ
＿６、Ｎａ＿２ＧｅＦ＿６、Ｋ＿２ＧｅＦ＿６、ＮａＰ
Ｆ＿６、ＫＰＦ＿６、ＮＨ＿４ＰＦ＿６、Ｎａ＿３Ａｌ
Ｆ＿６、Ｋ＿２ＳｉＦ＿６、Ｌｉ＿２ＳｉＦ＿６・２Ｈ
＿２Ｏ、Ｎａ＿２ＳｉＦ＿６、ＬｉＦ、ＮａＨＦ＿２、
ＫＨＦ＿２、ＮＨ＿４ＨＦ＿２、Ｎａ＿２ＴｉＦ＿６、
Ｋ＿２ＴｉＦ＿６、Ｋ＿２ＺｒＦ＿６、（ＮＨ＿４）＿
２ＺｒＦ＿６、ＭｇＳｉＦ＿６、ＳｒＳｉＦ＿６、Ｌｉ
ＢＦ＿４、ＮａＢＦ＿４及びＫＢＦ＿４からなる群から
選ばれた少なくとも一種の材料を０．００１〜１０重量
％加え、これを金属製の容器に詰めて真空封止して、熱
間静水圧加圧し、更にアニールしてなる透光性焼結体シ
ンチレータと、該シンチレータの発光を検知する光検出
器とからなることを特徴とする放射線検出器。[Claims] 1. A powder scintillator that emits light by radiation and has the general formula (Ln_1_-_x_-_yPr_xCe_y)_2O
_2S: (X) (However, Ln represents at least one element selected from the group consisting of Gd, La, and Y, X represents at least one element selected from the group consisting of F and Cl, and x 3×10^-^8≦x≦0.2, y is a value in the range of 10^-^6≦y≦5×10^-^3, and the amount of X is 2 to 1000 ppm. As an auxiliary agent, Li_2GeF_6, (NH_4)_2GeF
_6, Na_2GeF_6, K_2GeF_6, NaP
F_6, KPF_6, NH_4PF_6, Na_3Al
F_6, K_2SiF_6, Li_2SiF_6・2H
_2O, Na_2SiF_6, LiF, NaHF_2,
KHF_2, NH_4HF_2, Na_2TiF_6,
K_2TiF_6, K_2ZrF_6, (NH_4)_
2ZrF_6, MgSiF_6, SrSiF_6, Li
0.001 to 10% by weight of at least one material selected from the group consisting of BF_4, NaBF_4 and KBF_4 is added, this is packed in a metal container, vacuum sealed, hot isostatically pressed, and further annealed. 1. A radiation detector comprising: a translucent sintered scintillator; and a photodetector that detects light emitted from the scintillator.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16184786A JPH0797139B2 (en) | 1986-07-11 | 1986-07-11 | Radiation detector |
| US06/895,455 US4733088A (en) | 1985-09-02 | 1986-08-11 | Radiation detector |
| DE19863629180 DE3629180A1 (en) | 1985-09-02 | 1986-08-28 | RADIATION DETECTOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16184786A JPH0797139B2 (en) | 1986-07-11 | 1986-07-11 | Radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6318286A true JPS6318286A (en) | 1988-01-26 |
| JPH0797139B2 JPH0797139B2 (en) | 1995-10-18 |
Family
ID=15743071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16184786A Expired - Lifetime JPH0797139B2 (en) | 1985-09-02 | 1986-07-11 | Radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797139B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191084A (en) * | 1988-01-27 | 1989-08-01 | Hitachi Medical Corp | Radiation detector |
| WO1999002622A1 (en) * | 1997-07-08 | 1999-01-21 | Hitachi Medical Corporation | Phosphor, and radiation detector and x-ray ct unit each equipped therewith |
-
1986
- 1986-07-11 JP JP16184786A patent/JPH0797139B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191084A (en) * | 1988-01-27 | 1989-08-01 | Hitachi Medical Corp | Radiation detector |
| WO1999002622A1 (en) * | 1997-07-08 | 1999-01-21 | Hitachi Medical Corporation | Phosphor, and radiation detector and x-ray ct unit each equipped therewith |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0797139B2 (en) | 1995-10-18 |
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