JPS63181473U - - Google Patents
Info
- Publication number
- JPS63181473U JPS63181473U JP7041087U JP7041087U JPS63181473U JP S63181473 U JPS63181473 U JP S63181473U JP 7041087 U JP7041087 U JP 7041087U JP 7041087 U JP7041087 U JP 7041087U JP S63181473 U JPS63181473 U JP S63181473U
- Authority
- JP
- Japan
- Prior art keywords
- cross beam
- arm
- pedestal
- rail
- rotatable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Bridges Or Land Bridges (AREA)
- Spray Control Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7041087U JPS63181473U (enrdf_load_stackoverflow) | 1987-05-12 | 1987-05-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7041087U JPS63181473U (enrdf_load_stackoverflow) | 1987-05-12 | 1987-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63181473U true JPS63181473U (enrdf_load_stackoverflow) | 1988-11-22 |
Family
ID=30912020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7041087U Pending JPS63181473U (enrdf_load_stackoverflow) | 1987-05-12 | 1987-05-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63181473U (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
| US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
| US7005344B2 (en) | 1997-07-29 | 2006-02-28 | Micron Technology, Inc. | Method of forming a device with a gallium nitride or gallium aluminum nitride gate |
| US7109548B2 (en) | 1997-07-29 | 2006-09-19 | Micron Technology, Inc. | Operating a memory device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6129864B2 (enrdf_load_stackoverflow) * | 1977-03-24 | 1986-07-09 | Fuseso* Nauchino Isusuredo* I Konsuto* Inst Ho Oborudowaniiyu Dorya Shinoi Puromu* | |
| JPS61237798A (ja) * | 1985-04-12 | 1986-10-23 | 清水建設株式会社 | トンネル内のコンクリ−ト吹付装置 |
-
1987
- 1987-05-12 JP JP7041087U patent/JPS63181473U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6129864B2 (enrdf_load_stackoverflow) * | 1977-03-24 | 1986-07-09 | Fuseso* Nauchino Isusuredo* I Konsuto* Inst Ho Oborudowaniiyu Dorya Shinoi Puromu* | |
| JPS61237798A (ja) * | 1985-04-12 | 1986-10-23 | 清水建設株式会社 | トンネル内のコンクリ−ト吹付装置 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
| US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
| US7005344B2 (en) | 1997-07-29 | 2006-02-28 | Micron Technology, Inc. | Method of forming a device with a gallium nitride or gallium aluminum nitride gate |
| US7109548B2 (en) | 1997-07-29 | 2006-09-19 | Micron Technology, Inc. | Operating a memory device |
| US7141824B2 (en) | 1997-07-29 | 2006-11-28 | Micron Technology, Inc. | Transistor with variable electron affinity gate |
| US7154153B1 (en) | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
| US7169666B2 (en) | 1997-07-29 | 2007-01-30 | Micron Technology, Inc. | Method of forming a device having a gate with a selected electron affinity |
| US7242049B2 (en) | 1997-07-29 | 2007-07-10 | Micron Technology, Inc. | Memory device |