|
US6620723B1
(en)
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
|
US7101795B1
(en)
|
2000-06-28 |
2006-09-05 |
Applied Materials, Inc. |
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
|
|
US6551929B1
(en)
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
|
US7405158B2
(en)
|
2000-06-28 |
2008-07-29 |
Applied Materials, Inc. |
Methods for depositing tungsten layers employing atomic layer deposition techniques
|
|
US6998579B2
(en)
|
2000-12-29 |
2006-02-14 |
Applied Materials, Inc. |
Chamber for uniform substrate heating
|
|
US6765178B2
(en)
|
2000-12-29 |
2004-07-20 |
Applied Materials, Inc. |
Chamber for uniform substrate heating
|
|
US6951804B2
(en)
|
2001-02-02 |
2005-10-04 |
Applied Materials, Inc. |
Formation of a tantalum-nitride layer
|
|
US6878206B2
(en)
|
2001-07-16 |
2005-04-12 |
Applied Materials, Inc. |
Lid assembly for a processing system to facilitate sequential deposition techniques
|
|
US6734020B2
(en)
|
2001-03-07 |
2004-05-11 |
Applied Materials, Inc. |
Valve control system for atomic layer deposition chamber
|
|
US7211144B2
(en)
|
2001-07-13 |
2007-05-01 |
Applied Materials, Inc. |
Pulsed nucleation deposition of tungsten layers
|
|
US7085616B2
(en)
|
2001-07-27 |
2006-08-01 |
Applied Materials, Inc. |
Atomic layer deposition apparatus
|
|
US7049226B2
(en)
|
2001-09-26 |
2006-05-23 |
Applied Materials, Inc. |
Integration of ALD tantalum nitride for copper metallization
|
|
US6936906B2
(en)
|
2001-09-26 |
2005-08-30 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
|
US6916398B2
(en)
|
2001-10-26 |
2005-07-12 |
Applied Materials, Inc. |
Gas delivery apparatus and method for atomic layer deposition
|
|
US6911391B2
(en)
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
|
US6833161B2
(en)
|
2002-02-26 |
2004-12-21 |
Applied Materials, Inc. |
Cyclical deposition of tungsten nitride for metal oxide gate electrode
|
|
US7439191B2
(en)
|
2002-04-05 |
2008-10-21 |
Applied Materials, Inc. |
Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
|
|
US6846516B2
(en)
|
2002-04-08 |
2005-01-25 |
Applied Materials, Inc. |
Multiple precursor cyclical deposition system
|
|
US6875271B2
(en)
|
2002-04-09 |
2005-04-05 |
Applied Materials, Inc. |
Simultaneous cyclical deposition in different processing regions
|
|
US7262133B2
(en)
|
2003-01-07 |
2007-08-28 |
Applied Materials, Inc. |
Enhancement of copper line reliability using thin ALD tan film to cap the copper line
|
|
WO2004113585A2
(en)
|
2003-06-18 |
2004-12-29 |
Applied Materials, Inc. |
Atomic layer deposition of barrier materials
|