JPS63177423A - Fixing material for semiconductor wafer - Google Patents
Fixing material for semiconductor waferInfo
- Publication number
- JPS63177423A JPS63177423A JP62008665A JP866587A JPS63177423A JP S63177423 A JPS63177423 A JP S63177423A JP 62008665 A JP62008665 A JP 62008665A JP 866587 A JP866587 A JP 866587A JP S63177423 A JPS63177423 A JP S63177423A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- adhesive
- separate
- density polyethylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title claims abstract description 6
- 239000010410 layer Substances 0.000 claims abstract description 38
- 239000002313 adhesive film Substances 0.000 claims abstract description 22
- 229920001684 low density polyethylene Polymers 0.000 claims abstract description 19
- 239000004702 low-density polyethylene Substances 0.000 claims abstract description 19
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 18
- 229920000306 polymethylpentene Polymers 0.000 claims abstract description 12
- 239000011116 polymethylpentene Substances 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims abstract description 7
- 230000001070 adhesive effect Effects 0.000 claims abstract description 7
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000002985 plastic film Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- AWQFNUMHFNEWGS-UHFFFAOYSA-N 2-methylprop-1-ene;styrene Chemical group CC(C)=C.C=CC1=CC=CC=C1 AWQFNUMHFNEWGS-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Folding Of Thin Sheet-Like Materials, Special Discharging Devices, And Others (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、低密度ポリエチレンないしポリメチルペンテ
ンからなる非汚染型の剥離層を有する剥離フィルムを感
圧性接着剤面に貼着してなり、半導体チップの製造過程
に好適な半導体ウニ／’％の固定部材に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides a release film having a non-contaminating release layer made of low-density polyethylene or polymethylpentene attached to a pressure-sensitive adhesive surface. This invention relates to a fixing member for semiconductor sea urchins suitable for manufacturing processes.
従来の技術及び問題点
半導体チップの製造過程における半導体ウエノ＼の裏面
研摩工程や裁断チップ化工程などにおいて、回路パター
ン面の保護やウェハの固定などの目的で固定部材が用い
られている（特願昭５７−４２１２８号、特願昭５７−
４２１２９号等）。半導体ウェハの固定部材は一般に、
粘着テープ様の接着フィルムとその感圧性接着剤面に貼
着された剥離フィルムとからなる。剥離フィルムは流通
・保管過程で接着フィルムの感圧性接着剤層が汚染する
ことを防止するためのものである。Conventional techniques and problems Fixing members are used for purposes such as protecting the circuit pattern surface and fixing the wafer in the process of polishing the back surface of semiconductor wafers and cutting them into chips in the manufacturing process of semiconductor chips (patent application). No. 57-42128, patent application 1982-
42129 etc.). Semiconductor wafer fixing members are generally
It consists of an adhesive tape-like adhesive film and a release film attached to the pressure-sensitive adhesive surface. The release film is used to prevent the pressure-sensitive adhesive layer of the adhesive film from being contaminated during distribution and storage.
従来、その剥離フィルムとしてはポリエステルなどから
なるプラスチックフィルムをシリコーン系剥離剤等で処
理してその塗布皮膜を表面に有するものが知られていた
。Conventionally, as the release film, a plastic film made of polyester or the like is treated with a silicone release agent or the like and has a coated film on the surface thereof.
しかしながら、剥離剤の塗布皮膜からなる剥離層はその
本来の性質に基づき被処理フィルムより脱落しやすい。However, due to its inherent properties, the release layer made of a film coated with a release agent is more likely to fall off than the film to be processed.
そのため、経日的に剥離層が被処理フィルムより徐々に
脱落して感圧性接着剤面に転写され、これが半導体ウェ
ハに貼着した際にウェハを汚染することとなり、高度の
清澄条件が要求される半導体チップの製造過程において
は容認しえない問題点となっていた。Therefore, over time, the release layer gradually falls off from the processed film and is transferred to the pressure-sensitive adhesive surface, which contaminates the wafer when it is attached to a semiconductor wafer, requiring high clarification conditions. This has become an unacceptable problem in the manufacturing process of semiconductor chips.
問題点を解決するための手段
本発明は、低密度ポリエチレンないしポリメチルペンテ
ンからなる剥離層を有する新規な剥離フィルムにより上
記の問題点を克服したものである。Means for Solving the Problems The present invention overcomes the above problems with a novel release film having a release layer made of low density polyethylene or polymethylpentene.
すなわち、本発明は、低密度ポリエチレンないしポリメ
チルペンテンからなる剥離層を有する剥離フィルムと、
プラスチックの薄葉体からなる支持基材に感圧性接着剤
層を付設してなる接着フィルムとからなり、前記接着フ
ィルムにおける感圧性接着剤面に剥離フィルムをその剥
離層を介し貼着してなる半導体ウェハの固定部材を提供
・するものである。That is, the present invention provides a release film having a release layer made of low density polyethylene or polymethylpentene;
A semiconductor comprising an adhesive film formed by attaching a pressure-sensitive adhesive layer to a support base made of a thin plastic body, and a release film is attached to the pressure-sensitive adhesive surface of the adhesive film via the release layer. It provides a wafer fixing member.
作 用
低密度ポリエチレンないしポリメチルペンテンからなる
剥離層を有・する剥離フィルムを用いることにより、感
圧性接着剤層に剥離層が転写されることを有効に防止す
ることができ、ひいては剥離層の転写物による半導体ウ
ェハの汚染を回避することができる。また、該転写によ
る感圧性接着剤層の接着力の低下も回避される。さらに
、剥離フィルムを接着フィルムより引き剥がすことも容
易である。Function: By using a release film having a release layer made of low-density polyethylene or polymethylpentene, it is possible to effectively prevent the release layer from being transferred to the pressure-sensitive adhesive layer. Contamination of the semiconductor wafer by transferred materials can be avoided. Furthermore, a decrease in the adhesive strength of the pressure-sensitive adhesive layer due to the transfer is also avoided. Furthermore, it is also easy to peel off the release film from the adhesive film.
発明の構成要素の例示
本発明において用いられる剥離フィルムは、低密度ポリ
エチレンないしポリメチルペンテンからなる剥離層を有
するものである。従って、剥離フィルムは低密度ポリエ
チレン、ポリメチルペンテン又はその混合物からなる単
層物であってもよいし、該樹脂からなる剥離層を少なく
とも表面に有する多層物であってもよい。単層物として
構成する場合その厚さとしては４０μｍ以上、就中４０
〜１００μｍが適当である。その厚さが４０μｍ未満で
は強度不足で剥がし時に破断する場合がある。多層物と
して構成する場合には前記樹脂からなる剥離層の厚さは
５μｍ以上、就中５〜１００μｍが適当である。その厚
さが５μｍ未満では均一厚の剥離フィルムが得にくい。Examples of Constituent Elements of the Invention The release film used in the present invention has a release layer made of low density polyethylene or polymethylpentene. Therefore, the release film may be a single layer made of low density polyethylene, polymethylpentene or a mixture thereof, or a multilayer film having a release layer made of the resin on at least the surface. When constructed as a single layer, its thickness is 40 μm or more, especially 40 μm.
~100 μm is suitable. If the thickness is less than 40 μm, the film may break when peeled off due to insufficient strength. When constructed as a multilayered product, the thickness of the release layer made of the resin is preferably 5 μm or more, particularly 5 to 100 μm. If the thickness is less than 5 μm, it is difficult to obtain a release film with a uniform thickness.
なお、多層物として構成する場合、剥離層以外の層の構
成について特に限定はなく、フィルム強度等の物性など
の点より適宜に決定される。In addition, in the case of constructing a multilayer product, there is no particular limitation on the composition of the layers other than the release layer, and it is appropriately determined from the point of view of physical properties such as film strength.
剥離層を構成するための低密度ポリエチレン又はポリメ
チルペンテンとしては公知のものを用いうる。特に、低
密度ポリエチレンとしては密度（ｇ／ ｃｌＴり ０
、９１〜０ 、９２５、メルトインデックス（ＭＩ。Known low-density polyethylene or polymethylpentene can be used to constitute the release layer. In particular, low density polyethylene has a density (g/clT 0
, 91-0, 925, Melt Index (MI.
２７１０分）０．５〜１０（軟化点９０±５℃〉、結晶
化度４５〜６０％のものが好ましく用いつる。2710 minutes) 0.5 to 10 (softening point 90±5°C) and crystallinity 45 to 60% are preferably used.
本発明の半導体ウェハ固定部材は、前記した剥離フィル
ムをその剥離層を介して、接着フィルムにおける感圧性
接着剤面に貼着したものである。The semiconductor wafer fixing member of the present invention has the above-mentioned release film adhered to the pressure-sensitive adhesive surface of the adhesive film via the release layer.
その接着フィルムとしては公知のものを用いつる。A known adhesive film is used as the adhesive film.
従って一般に、接着フィルムはプラスチックの薄葉体か
らなる支持基材に感圧性接着剤層を布設したものからな
る。すなわち、ポリエチレン、ポリプロピレンのような
ポリオレフィン類、ポリエチレンテレフタレートのよう
なポリエステル順などからなるフィルムなどで代表され
る厚さ２０〜５００μｍの支持基材に、アクリル系、ゴ
ム系、スチレン−イソブチレン系などで代表される公知
の感圧性接着剤層を１〜５００μｍの厚さで設けたもの
から一般になる。なお、感圧性接着剤としては例えば凝
集力を調整したり、あるいは分離成分を除去するなどし
て引き剥がした際に被着体上にその成分を残存させない
タイプのものが好ましく用いられる。Therefore, adhesive films generally consist of a support substrate made of thin plastic material and a pressure-sensitive adhesive layer disposed thereon. That is, a supporting base material of 20 to 500 μm in thickness, which is typically a film made of polyolefins such as polyethylene, polypropylene, or polyesters such as polyethylene terephthalate, is coated with acrylic, rubber, styrene-isobutylene, etc. Generally, a typical known pressure-sensitive adhesive layer is provided with a thickness of 1 to 500 μm. As the pressure-sensitive adhesive, it is preferable to use a type that does not leave any components on the adherend when it is peeled off, for example by adjusting the cohesive force or removing separated components.
発明の効果
本発明によれば、特殊な剥離層を有する剥離フィルムで
感圧性接着剤面をカバーするようにしたので、剥離フィ
ルムの引き剥がしが容易であると共に、感圧性接着剤面
に剥離層を形成する成分が転写することを有効に防止す
ることができ、これにより半導体ウェハの汚染を有効に
防止することができる。Effects of the Invention According to the present invention, since the pressure-sensitive adhesive surface is covered with a release film having a special release layer, the release film can be easily peeled off, and the release layer is not attached to the pressure-sensitive adhesive surface. It is possible to effectively prevent the components forming the wafer from being transferred, thereby effectively preventing contamination of the semiconductor wafer.
実施例
実施例１
アクリル酸エチル５０部（重量部、以下同様）、アクリ
ル酸２−エチルヘキシル５０部、アクリロニトリル１５
部及びアクリル酸３部をアゾビスイソブチロニトリルの
存在下にトルエン中で共重合処理して得た共重合体１０
０部（固形分）に、ポリイソシアネート５部を加え、こ
れを厚さ６０μｍのポリエチレンフィルムのコロナ放電
処理面に乾燥後の厚さが４０μｍとなるように塗布した
のち９０°Ｃで３分間加熱処理して接着フィルムを得た
。Examples Example 1 50 parts of ethyl acrylate (parts by weight, the same applies hereinafter), 50 parts of 2-ethylhexyl acrylate, 15 parts of acrylonitrile
Copolymer 10 obtained by copolymerizing 1 part and 3 parts of acrylic acid in toluene in the presence of azobisisobutyronitrile.
Add 5 parts of polyisocyanate to 0 parts (solid content), apply this to the corona discharge treated surface of a 60 μm thick polyethylene film to a dry thickness of 40 μm, and then heat at 90°C for 3 minutes. After processing, an adhesive film was obtained.
次に、ＭＩが６．５（軟化点８６℃）、密度が０．９１
７の低密度ポリエチレンをインフレーション方式で溶融
押出して得た、厚さ６０ｕｍのフィルムからなる剥離フ
ィルムを前記接着フィルムの感圧性接着剤面に貼着して
半導体ウェハの固定部材を得た。Next, MI is 6.5 (softening point 86°C) and density is 0.91.
A release film having a thickness of 60 um obtained by melt-extruding low-density polyethylene No. 7 by an inflation method was adhered to the pressure-sensitive adhesive surface of the adhesive film to obtain a member for fixing a semiconductor wafer.
実施例２
低密度ポリエチレンフィルムに代えてポリメチルペンテ
ンフィルムからなる剥離フィルムを用いたほかは実施例
１に準じて半導体ウェハの固定部材を得た。Example 2 A semiconductor wafer fixing member was obtained according to Example 1, except that a release film made of polymethylpentene film was used instead of the low-density polyethylene film.
実施例３
低密度ポリエチレンフィルムに代えて低密度ポリエチレ
ン層（ＭＩ６．５、密度０．９１７、厚さ２０μｍ＞と
高密度ポリエチレン層（ＭＩｏ、５、密度０．９５０、
厚さ４０μｍ）の２層からなる剥離フィルムを用いたほ
かは実施例１に準じて半導体ウェハの固定部材を得た。Example 3 Instead of the low density polyethylene film, a low density polyethylene layer (MI6.5, density 0.917, thickness 20 μm>) and a high density polyethylene layer (MIo, 5, density 0.950,
A semiconductor wafer fixing member was obtained in accordance with Example 1, except that a two-layer release film having a thickness of 40 μm was used.
比較例１
低密度ポリエチレンフィルムに代えて中密度ポリエチレ
ン（ＭＩＯ，５、密度０．９３５ ）フィルムからなる
剥離フィルムを用いたほかは実施例１に準じて半導体ウ
ェハの固定部材を得た。Comparative Example 1 A semiconductor wafer fixing member was obtained in accordance with Example 1, except that a release film made of medium density polyethylene (MIO, 5, density 0.935) film was used in place of the low density polyethylene film.
比較例２
低密度ポリエチレンフィルムに代えて高密度ポリエチレ
ン（ＭＩｏ、５、密度０．９５０）フィルムからなる剥
離フィルムを用いたほかは実施例１に準じて半導体ウェ
ハの固定部材を得た。Comparative Example 2 A semiconductor wafer fixing member was obtained according to Example 1, except that a release film made of a high-density polyethylene (MIo, 5, density 0.950) film was used in place of the low-density polyethylene film.
比較例３
低密度ポリエチレンフィルムに代えて付加型シリコーン
系剥離剤の塗布皮膜（固形分塗布量０．２ｇ／ｎｆ）を
設けたポリエステルフィルム（厚さ５０＃Ｉｍ ）から
なる剥離フィルムを用いたほかは実施例１に準じて半導
体ウェハの固定部材を得た。Comparative Example 3 In place of the low-density polyethylene film, a release film made of a polyester film (thickness: 50#Im) provided with a coating film (solid content coating amount: 0.2 g/nf) of an addition-type silicone release agent was used. A semiconductor wafer fixing member was obtained according to Example 1.
評価試験
実施例、比較例で得た半導体ウェハの固定部材を下記の
試験に供した。The semiconductor wafer fixing members obtained in the evaluation test examples and comparative examples were subjected to the following tests.
［剥離力］
室温保存物（初期物）又は６０℃で７日間の加熱処理物
（加熱物）についてＪＩＳ Ｚ ０２３７に準じ、
剥離フィルムより接着フィルムを剥離するのに要する力
を求めた。[Peeling force] According to JIS Z 0237 for products stored at room temperature (initial product) or products heated at 60°C for 7 days (heated product),
The force required to peel off the adhesive film from the release film was determined.
［非脱落性］
２０ｇ／ｃｎｆの荷重を負荷したフェルトを剥離フィル
ム（剥離層面）上に載置してｌＯ往復させたのちの面に
接着フィルムを圧着し、これにつきＪＩＳＺ ０２３
７に準じて剥離フィルムより接着フィルムを剥離するの
に要する力を求めた。そして、その測定値が上記初期物
の場合よりも増加したものを×、それ以外のものをＯと
して評価した。[Non-shedding property] Felt loaded with a load of 20 g/cnf was placed on a release film (release layer surface) and reciprocated with 1O, and then an adhesive film was crimped on the surface, and this conformed to JISZ 023.
7, the force required to peel off the adhesive film from the release film was determined. Those whose measured values increased compared to those of the initial product were evaluated as x, and those other than that were evaluated as O.
［接着力］
ＪＩＳ Ｚ ０２３７に準じ、剥離フィルムより剥
離した接着フィルムをミラーシリコンウェハに貼着しそ
の接着力を測定した。試験は室温保存物（初期物）又は
６０℃で７日間の加熱処理物（加熱物〉について行った
。[Adhesive Strength] According to JIS Z 0237, the adhesive film peeled from the release film was attached to a mirror silicon wafer, and its adhesive strength was measured. The test was conducted on products stored at room temperature (initial product) or products heated at 60° C. for 7 days (heated product).
結果を表に示した。The results are shown in the table.
表より、本発明の半導体ウェハ固定部−材は非脱落性（
剥離層の非転写性）に優れると共に、充分な剥離フィル
ムと接着フィルムとの剥離容易性及び接着フィルムの半
導体ウェハに対する接着性を有していることがわかる。From the table, it can be seen that the semiconductor wafer fixing member of the present invention has a non-falling property (
It can be seen that the composition has excellent properties (non-transferability of the release layer), sufficient ease of peeling between the release film and the adhesive film, and sufficient adhesion of the adhesive film to the semiconductor wafer.
Claims (1)
なる剥離層を有する剥離フィルムと、プラスチックの薄
葉体からなる支持基材に感圧性接着剤層を付設してなる
接着フィルムとからなり、前記接着フィルムにおける感
圧性接着剤面に剥離フィルムをその剥離層を介し貼着し
てなる半導体ウェハの固定部材。1. Consisting of a release film having a release layer made of low-density polyethylene or polymethylpentene, and an adhesive film formed by attaching a pressure-sensitive adhesive layer to a supporting base material made of a thin plastic body, the adhesive film has a A semiconductor wafer fixing member made by pasting a release film on a pressure adhesive surface via the release layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008665A JPS63177423A (en) | 1987-01-17 | 1987-01-17 | Fixing material for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008665A JPS63177423A (en) | 1987-01-17 | 1987-01-17 | Fixing material for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63177423A true JPS63177423A (en) | 1988-07-21 |
Family
ID=11699230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62008665A Pending JPS63177423A (en) | 1987-01-17 | 1987-01-17 | Fixing material for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63177423A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5183699A (en) * | 1989-08-01 | 1993-02-02 | Mitsui Toatsu Chemicals, Inc. | Wafer processing films |
| US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| JP2002059515A (en) * | 2000-08-14 | 2002-02-26 | Nitto Denko Corp | Release liner and pressure-sensitive adhesive tape or sheet using the same |
| JP2011171711A (en) * | 2010-01-21 | 2011-09-01 | Hitachi Chem Co Ltd | Adhesive film for semiconductor wafer processing |
-
1987
- 1987-01-17 JP JP62008665A patent/JPS63177423A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5183699A (en) * | 1989-08-01 | 1993-02-02 | Mitsui Toatsu Chemicals, Inc. | Wafer processing films |
| US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| US6478918B2 (en) | 1998-03-30 | 2002-11-12 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| JP2002059515A (en) * | 2000-08-14 | 2002-02-26 | Nitto Denko Corp | Release liner and pressure-sensitive adhesive tape or sheet using the same |
| JP2011171711A (en) * | 2010-01-21 | 2011-09-01 | Hitachi Chem Co Ltd | Adhesive film for semiconductor wafer processing |
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