JPS63166966A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS63166966A JPS63166966A JP30985986A JP30985986A JPS63166966A JP S63166966 A JPS63166966 A JP S63166966A JP 30985986 A JP30985986 A JP 30985986A JP 30985986 A JP30985986 A JP 30985986A JP S63166966 A JPS63166966 A JP S63166966A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- target
- substrate
- pressure
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 9
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007872 degassing Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明はスパッタリング装置に係り、特にグロー放電に
より発生するガスプラズマを用いてスパッタリングを行
なうスパッタリング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a sputtering apparatus, and particularly to a sputtering apparatus that performs sputtering using gas plasma generated by glow discharge.
（従来の技術）
従来から、真空チャンバ内にアルミニウムまたはアルミ
ニウム合金等からなるターゲットを配置し、この真空チ
ャンバ内にグロー放電によるガスプラズマを発生させ、
上記ターゲット材料を被覆されるべき基板の表面に付着
させて薄膜を形成するスパッタリング装置が多く用いら
れている。(Prior Art) Conventionally, a target made of aluminum or an aluminum alloy is placed in a vacuum chamber, and gas plasma is generated by glow discharge in the vacuum chamber.
Sputtering apparatuses are often used to form a thin film by depositing the target material on the surface of a substrate to be coated.
このスパッタリングにより得られた薄膜は、半導体集積
回路等の微小固体素子の製造における電極形成あるいは
電極間配線として利用されており、この電極形成、電極
間配線の特性として鏡面反射率が高いこと要求されてい
る。これは、薄膜の形成後微細パターンを形成する過程
において薄い膜上に塗布するレジストと呼ばれる高分子
材料を紫外線等で露光する際に、位置合わせが可能な程
度に鏡面反射率が高ければ十分である。Thin films obtained by this sputtering are used to form electrodes or interconnects between electrodes in the production of microsolid-state devices such as semiconductor integrated circuits, and high specular reflectance is required as a characteristic of the electrode formation and interconnects between electrodes. ing. This is because when exposing a polymeric material called resist, which is applied to a thin film in the process of forming a fine pattern after forming a thin film, to ultraviolet light, etc., it is sufficient that the specular reflectance is high enough to enable alignment. be.
（発明が解決しようとする問題点）
しかし、従来のスパッタリング装置では、真空チャンバ
内の残留ガス量が原因で、結晶の異常成長や結晶粒の大
きさの不均一等が発生してしまい、」二記鏡面反射率が
低くなる場合があるという問題を有している。(Problems to be solved by the invention) However, in conventional sputtering equipment, abnormal growth of crystals and non-uniformity of crystal grain size occur due to the amount of residual gas in the vacuum chamber. There is a problem in that the specular reflectance may be low.
本発明は上記した点に鑑みてなされたもので、鏡面反射
率を高めることのできるスパッタリング装置を提供する
ことを目的とするものである。The present invention has been made in view of the above points, and an object of the present invention is to provide a sputtering apparatus that can increase specular reflectance.
（問題点を解決するための手段）
上記目的を達成するため本発明に係るスパッタリング装
置は、真空排気される真空チャンバの内部に基板および
ターゲットを対向して配置するとともに、この真空チャ
ンバにプロセスガスを導入しながらグロー放電を発生さ
せて上記ターゲット材料を上記基板の表面に付着させる
スパッタリング装置において、上記真空チャンバを加熱
するヒータと、上記真空チャンバの温度を測定する温度
計と、真空チャンバ内の圧力を測定する圧力計と、上記
温度計および圧力計の測定値を人力し一定時間内の圧力
変化から残留ガス放出量を計算する計算ユニットと、こ
の計算ユニットによる値が１００℃以上で１ｘｌＯ−’
Ｐａｍ／ｓｅｃ以下となったときにスパッタリングを自
動的に開始させる制御装置とを設けたことをその特徴と
するものである。(Means for Solving the Problems) In order to achieve the above object, a sputtering apparatus according to the present invention disposes a substrate and a target facing each other inside a vacuum chamber to be evacuated, and also provides a process gas in this vacuum chamber. In the sputtering apparatus, the target material is attached to the surface of the substrate by generating a glow discharge while introducing a gas, a heater for heating the vacuum chamber, a thermometer for measuring the temperature of the vacuum chamber, and a thermometer for measuring the temperature of the vacuum chamber. A pressure gauge that measures pressure, a calculation unit that calculates the amount of residual gas released from the pressure change within a certain time by manually inputting the measured values of the thermometer and pressure gauge, and a value determined by this calculation unit that is 1xlO- '
It is characterized by the provision of a control device that automatically starts sputtering when the temperature drops below Pam/sec.
（作 用）
本発明においては、計算ユニットにより上記温度計およ
び圧力計の測定値を入力して計算した残留ガス放出量が
１００℃以上で１×１０−’ＰａＴｄ／ ｓ ｅ ｃ以
下となったときに、制御装置によりスパッタリングを自
動的に開始させるようにしたので、加熱による脱ガス効
果が高く、しかも１．残留ガス量が少なくなり、確実に
鏡面反射率の高い薄膜を得ることが可能となるものであ
る。(Function) In the present invention, the amount of residual gas released calculated by inputting the measured values of the above-mentioned thermometer and pressure gauge by the calculation unit is 1×10-'PaTd/sec or less at 100°C or higher. Since sputtering is started automatically by the control device, the degassing effect due to heating is high, and 1. This reduces the amount of residual gas and makes it possible to reliably obtain a thin film with high specular reflectance.
（実施例） 以下、本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例を示したもので、真空チャン
バ１の上面には、基板２を保持する支持部材３が取付け
られ、該下面には、アルミニウムまたはアルミニウム合
金からなるターゲット４が取付けられている。また、上
記ターゲット４の周辺および真空チャンバ１の外周面に
は、ヒータ５゜６がそれぞれ配設されており、真空チャ
ンバ１の側部には、途中排気バルブ７を介して油拡散真
空ポンプ８および油回転真空ポンプ９が接続されている
。さらに、真空チャンバ１の下面には、Ａ「等のプロセ
スガスを導入するガス導入管１０が開閉バルブ１１を介
して接続され、上記ターゲット４および真空チャンバ１
には、それぞれ電源１２が接続されている。FIG. 1 shows an embodiment of the present invention, in which a support member 3 for holding a substrate 2 is attached to the upper surface of a vacuum chamber 1, and a target 4 made of aluminum or aluminum alloy is attached to the lower surface of the support member 3. installed. Additionally, heaters 5 and 6 are provided around the target 4 and on the outer peripheral surface of the vacuum chamber 1, and an oil diffusion vacuum pump 8 is connected to the side of the vacuum chamber 1 via an intermediate exhaust valve 7. and an oil rotary vacuum pump 9 are connected. Further, a gas introduction pipe 10 for introducing a process gas such as A is connected to the lower surface of the vacuum chamber 1 via an on-off valve 11, and is connected to the target 4 and the vacuum chamber 1 through an on-off valve 11.
A power supply 12 is connected to each of them.
上記真空チャンバ１には、熱電対１３および圧力ゲージ
１４が取付けられ、この熱電対１３および圧力ゲージ１
４は、それぞれ温度計１５および圧力計１６を介して計
算ユニット１７に接続されている。この計算ユニット１
７は、ＣＰＵユニット１８に接続され、このＣＰＵユニ
ット１８は上記ガス導入管１０の開閉バルブ１１および
上記電源１２のＯＮ、ＯＦＦ制御を行なうようにしてい
る。A thermocouple 13 and a pressure gauge 14 are attached to the vacuum chamber 1.
4 are connected to a calculation unit 17 via a thermometer 15 and a pressure gauge 16, respectively. This calculation unit 1
7 is connected to a CPU unit 18, and this CPU unit 18 controls ON/OFF of the opening/closing valve 11 of the gas introduction pipe 10 and the power supply 12.
本実施例においては、真空チャンバ１内を油拡散真空ポ
ンプ８および油回転真空ポンプ９により真空排気すると
ともに、各ヒータ５，６により真空チャンバ１を加熱す
る。そして、熱電対１３により測定された温度が１００
℃になった場合、排気バルブ７を閉じ、計算ユニット１
７により圧力ゲージ１４の測定値に基づいて一定時間内
の圧力上昇から残留ガス放出量を計算し、そのガス放出
量が１×１０−’Ｐａｍ／ｓｅｃとなった場合に、排気
バルブ７を開き、ＣＰＵユニット１８によりガス導入管
１０の開閉バルブ１１を開いてガスを導入しながら、ｉ
！！［１２をＯＮにしてスパッタリングを開始する。In this embodiment, the inside of the vacuum chamber 1 is evacuated by the oil diffusion vacuum pump 8 and the oil rotary vacuum pump 9, and the vacuum chamber 1 is heated by the heaters 5 and 6. Then, the temperature measured by the thermocouple 13 is 100
℃, close the exhaust valve 7 and close the calculation unit 1.
7 calculates the amount of residual gas released from the pressure rise within a certain period of time based on the measured value of the pressure gauge 14, and when the amount of gas released reaches 1×10-'Pam/sec, the exhaust valve 7 is opened. , while the CPU unit 18 opens the on-off valve 11 of the gas introduction pipe 10 to introduce gas, i
! ! [Turn ON 12 and start sputtering.
第２図は加熱時間と残留ガス放出量との関係を示したも
ので、真空チャンバを１ケ月大気に放置後、真空排気と
同時に加熱し、設定温度（１００℃）までの昇温時間は
無視するものとする。図中実線は加熱時におけるガス放
出量で、図中破線はそれぞれの加熱時間で常温まで冷却
した場合の常温におけるガス放出量である。これによる
と、実線のガス放出量が１×１０−’ＰａＴｌ１／ｓｅ
ｃの場合、加熱時間は１５ｈ「であり、常温におけるガ
ス放出量が４Ｘ１０−６ＰａＴＩｔ／ｓｅｃになッテイ
る。ことがわかる。また、第３図は加熱時のガス放出量
とアルミニウムの鏡面反射率との関係を示したもので、
ガス放出量が１×１０−’Ｐａｍ／ｓｅｃ以下であれば
、鏡面反射率が８０％以上あることがわかる。Figure 2 shows the relationship between heating time and the amount of residual gas released. After leaving the vacuum chamber in the atmosphere for one month, it is heated at the same time as evacuation, and the time taken to raise the temperature to the set temperature (100°C) is ignored. It shall be. The solid line in the figure is the amount of gas released during heating, and the broken line in the figure is the amount of gas released at room temperature when cooling to room temperature at each heating time. According to this, the gas release amount indicated by the solid line is 1×10-'PaTl1/se
In the case of c, the heating time is 15 hours, and the amount of gas released at room temperature is 4X10-6 PaTIt/sec. In addition, Figure 3 shows the amount of gas released during heating and the specular reflectance of aluminum. It shows the relationship between
It can be seen that the specular reflectance is 80% or more when the gas release amount is 1×10 −′ Pam/sec or less.
ここで、真空チャンバ１の温度を１００℃以上としてい
るのは、１００℃未満とすると、ガス放出の主要なＨ２
Ｏが排気されにく、加熱による脱ガス処理を円滑に行な
うことができなくなるためである。また、ガス放出量を
１×１０−’ＰａＴ！ｌ／ｓｅｃ以上とすると、残留ガ
ス量が多すぎてしまい結晶の異常成長や結晶粒の大きさ
の不均一等が発生してしまうためである。Here, the reason why the temperature of the vacuum chamber 1 is set to 100°C or higher is because if it is lower than 100°C, H2, which is the main cause of gas release,
This is because O is difficult to be exhausted and degassing treatment by heating cannot be performed smoothly. Also, the amount of gas released is 1×10-'PaT! This is because if it exceeds 1/sec, the amount of residual gas will be too large, resulting in abnormal growth of crystals, non-uniformity of crystal grain size, etc.
さらに、第４図は加熱時のガス放出量とアルミニウムの
固有抵抗および硬度との関係を示したもので、ガス放出
量が１×１０−’Ｐａｒｒｌ／ｓ ｅｃ以下であれば、
固有抵抗的２．７μΩ叩、硬度的５０ｋｇ／ｓｌを得る
ことができる。Furthermore, Fig. 4 shows the relationship between the amount of gas released during heating and the specific resistance and hardness of aluminum; if the amount of gas released is 1 x 10-' Parrl/sec or less,
It is possible to obtain a resistivity of 2.7 μΩ and a hardness of 50 kg/sl.
したがって、本実施例においては、基板に形成した薄膜
の鏡面反射率を確実に高めることができ、かつ、低抵抗
の薄膜を得ることができ、半導体素子の電極や電極間配
線の形成を確実に行なうことが可能となる。Therefore, in this example, the specular reflectance of the thin film formed on the substrate can be reliably increased, a thin film with low resistance can be obtained, and the electrodes of the semiconductor element and the wiring between the electrodes can be formed reliably. It becomes possible to do so.
以上述べたように本発明に係るスパッタリング装置は、
計算ユニットにより上記温度計および圧力計の測定値を
入力して計算した残留ガス放出量が１００℃以上で１×
１０−’ＰａＴＩｔ／ｓｅｃ以下となったときに、制御
装置によりスパッタリングを自動的に開始させるように
したので、加熱による脱ガス効果が高く、シかも、残留
ガス量が少なくなり、確実に鏡面反射率の高い薄膜を得
ることが可能となる等の効果を奏する。As described above, the sputtering apparatus according to the present invention has
If the amount of residual gas released calculated by inputting the measured values of the above thermometer and pressure gauge by the calculation unit is 100℃ or higher, 1×
Since sputtering is automatically started by the control device when the temperature drops below 10-'PaTIt/sec, the degassing effect due to heating is high, the amount of residual gas is reduced, and specular reflection is ensured. This has the effect of making it possible to obtain a thin film with a high ratio.
第１図乃至第４図はそれぞれ本発明の実施例を示したも
ので、第１図は概略構成図、第２図はガス放出量と加熱
時間との関係を示す線図、第３図は鏡面反射率とガス放
出量との関係を示す線図、第４図は固有抵抗および硬度
とガス放出量との関係を示す線図である。
１・・・真空チャンバ、２・・・基板、４・・・ターゲ
ット、５．６・・・ヒータ、１０・・・ガス導入管、１
３・・・熱電対、１４・・・圧力ゲージ、１７・・・計
算ユニット、１８・・・ＣＰＵユニット。
出願人代理人 佐 藤 −雄
刃χｆＪ＃、ｔ （ｐａｍ’／５ｅｅ）ｊ！ｈ３目
Ｔ人数出量（ｐａｍ３／５ｅａ）
弔４図Figures 1 to 4 show examples of the present invention, respectively, with Figure 1 being a schematic diagram, Figure 2 being a diagram showing the relationship between gas release amount and heating time, and Figure 3 being a diagram showing the relationship between gas release amount and heating time. FIG. 4 is a diagram showing the relationship between the specular reflectance and the amount of gas released. FIG. 4 is a diagram showing the relationship between the specific resistance and hardness and the amount of gas released. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Substrate, 4... Target, 5.6... Heater, 10... Gas introduction pipe, 1
3...Thermocouple, 14...Pressure gauge, 17...Calculation unit, 18...CPU unit. Applicant's agent Sato - Yuba χfJ#,t (pam'/5ee)j! h3th T number of people (pam3/5ea) Funeral figure 4
Claims (1)
板およびターゲットを対向して配置するとともに、この
真空チャンバにプロセスガスを導入しながらグロー放電
を発生させて上記ターゲット材料を上記基板の表面に付
着させるスパッタリング装置において、上記真空チャン
バを加熱するヒータと、上記真空チャンバの温度を測定
する温度計と、真空チャンバ内の圧力を測定する圧力計
と、上記温度計および圧力計の測定値を入力し一定時間
内の圧力変化から残留ガス放出量を計算する計算ユニッ
トと、この計算ユニットによる値が１００℃以上で１×
１０＾−＾４Ｐａｍ＾３／ｓｅｃ以下となったときにス
パッタリングを自動的に開始させる制御装置とを設けた
ことを特徴とするスパッタリング装置。A substrate to be coated and a target are placed facing each other inside a vacuum chamber to be evacuated, and a glow discharge is generated while introducing a process gas into the vacuum chamber to attach the target material to the surface of the substrate. In the sputtering apparatus, a heater for heating the vacuum chamber, a thermometer for measuring the temperature of the vacuum chamber, a pressure gauge for measuring the pressure inside the vacuum chamber, and the measured values of the thermometer and pressure gauge are input. A calculation unit that calculates the amount of residual gas released from pressure changes within a certain period of time, and a value calculated by this calculation unit that is 1× when the value is 100℃ or higher.
1. A sputtering apparatus comprising: a control device that automatically starts sputtering when the speed decreases to 10^-^4Pam^3/sec or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30985986A JPS63166966A (en) | 1986-12-27 | 1986-12-27 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30985986A JPS63166966A (en) | 1986-12-27 | 1986-12-27 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63166966A true JPS63166966A (en) | 1988-07-11 |
Family
ID=17998153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30985986A Pending JPS63166966A (en) | 1986-12-27 | 1986-12-27 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63166966A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS548129A (en) * | 1977-06-20 | 1979-01-22 | Siemens Ag | Method of making metallic layer |
| JPS56163438A (en) * | 1980-05-21 | 1981-12-16 | Toshiba Corp | Method for detecting hardening of resin in resin sealed semiconductor device |
| JPS61147870A (en) * | 1984-12-20 | 1986-07-05 | Anelva Corp | Formation of al film by sputtering |
-
1986
- 1986-12-27 JP JP30985986A patent/JPS63166966A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS548129A (en) * | 1977-06-20 | 1979-01-22 | Siemens Ag | Method of making metallic layer |
| JPS56163438A (en) * | 1980-05-21 | 1981-12-16 | Toshiba Corp | Method for detecting hardening of resin in resin sealed semiconductor device |
| JPS61147870A (en) * | 1984-12-20 | 1986-07-05 | Anelva Corp | Formation of al film by sputtering |
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