JPS63160344A - Manufacture of znsxse1-x(0<=x<=1) crystal - Google Patents
Manufacture of znsxse1-x(0<=x<=1) crystalInfo
- Publication number
- JPS63160344A JPS63160344A JP61306522A JP30652286A JPS63160344A JP S63160344 A JPS63160344 A JP S63160344A JP 61306522 A JP61306522 A JP 61306522A JP 30652286 A JP30652286 A JP 30652286A JP S63160344 A JPS63160344 A JP S63160344A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- crystal
- group
- zns
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000011574 phosphorus Substances 0.000 claims abstract 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 claims 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 11
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001442 room-temperature photoluminescence spectrum Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
【発明の目的〕
（産業上の利用分野）
本発明は、青色発光素子に適用可能なＩＩ−Ｖｌ族Ｐ型
半導体結晶の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION OBJECTS OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for manufacturing a II-Vl group P-type semiconductor crystal applicable to blue light emitting devices.
（従来の技術）
■−ｖ族化合物半導体を用いた赤色から緑色までの発光
素子は量産化の時代に入り、表示素子として広く実用さ
れている。この様な状況下で、可視域で欠けている唯一
の発光色である青色発光素子に対する期待が一層高まっ
ている、にも拘らず。(Prior Art) Red to green light emitting devices using group V compound semiconductors have entered the era of mass production and are now widely used as display devices. Under these circumstances, expectations are increasing for blue light-emitting devices, which are the only luminescent color lacking in the visible range.
これまでの■−Ｖ族化合物半導体発光素子と比肩し得る
青色発光素子の製造技術は未だ確立されていない。A manufacturing technology for a blue light-emitting device comparable to the conventional (1)-V group compound semiconductor light-emitting device has not yet been established.
青色発光素子を得るための第１の条件は、用いる半導体
の禁制帯幅ｌｌ：ｇが２ 、６ｅＶを越えることである
。この条件を満たす半導体結晶としては、ｎ−■族化合
物半導体であるＺｎＳ（Ｅｇ＝３．５ｅｌ／） 、Ｚｎ
Ｓｅ（Ｅｇ ＝ ２．６ｅＶ）或いはこれらの混晶があ
る。これらは直接遷移型であるため高い発光効率が期待
され。The first condition for obtaining a blue light emitting device is that the forbidden band width ll:g of the semiconductor used exceeds 2.6 eV. Semiconductor crystals that meet this condition include ZnS (Eg=3.5el/), which is an n-■ group compound semiconductor, and Zn
Se (Eg = 2.6eV) or a mixed crystal thereof. Since these are direct transition type, high luminous efficiency is expected.
各所で精力的な研究が進められている。Vigorous research is underway in various places.
青色発光素子（特にＬＥＤ、 ＬＤ）を実現する為には
。In order to realize blue light emitting devices (especially LEDs and LDs).
室温で低抵抗で青色発光強度の強い事が必須である。し
かし、Ｚｎ５ｘＳａ１−１（０≦Ｘ≦１）は、自己補償
効果が強く電気伝導型や制御する事が非常に難しい、そ
のためＰＮ接合を形成する事はもちろん、適当な後処理
を施す事なく低抵抗率の結晶を得る事すらなかなか菫し
い。近年、非熱平衡下での結晶成長方法と言われる有機
金属気相成長法（ＭＯＣＶＤ法）や分子線エピタキシャ
ル法（ＭＢＥ法）の発達に伴い、自己補償効果の抑制へ
の期待がかけられでいる。実際ＭＢＥ、 ＭＯＣＶＤの
開方法により、適当な不′純物を添加する事により後処
理なして低抵抗の半導体結晶が得られるようになってき
た。It is essential to have low resistance and strong blue emission intensity at room temperature. However, Zn5xSa1-1 (0≦X≦1) has a strong self-compensation effect, is electrically conductive, and is very difficult to control. Even obtaining resistivity crystals is quite difficult. In recent years, with the development of metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), which are said to be methods for growing crystals under non-thermal equilibrium, there are expectations for suppressing the self-compensation effect. . In fact, it has become possible to obtain low-resistance semiconductor crystals without post-processing by adding appropriate impurities using the opening methods of MBE and MOCVD.
ところが、低抵抗化した半導体結晶（ＺｎＳｘＳａｉ−
１＋結晶）は、青色発光素子に必須の室温における帯間
遷移による発光（〜４７０■）は見られるものの、それ
にも増して深い準位の関与したスペクトル幅の広い発光
が優勢に現われる。さらに、この深い準位の関与した発
光は不純物添加量の増加と共に強度が増大する。深い準
位の関与した緑〜赤色域の発光が強くなるどう発光色と
して青色とは見えず、濃度の増大と共に白色からオレン
ジ色の発光として視認されるようになる。また、濃度が
低い場合には抵抗率が増大し、青色発光強度も弱く実用
に適さない。However, semiconductor crystals with lower resistance (ZnSxSai-
1+ crystal), although light emission (~470 cm) due to interband transition at room temperature, which is essential for a blue light-emitting element, can be seen, light emission with a wide spectrum width involving deep levels appears predominant. Furthermore, the intensity of light emission involving this deep level increases as the amount of impurity added increases. As the light emission in the green to red region involving deep levels becomes stronger, the light emission color no longer appears as blue, but as the concentration increases, it becomes visible as white to orange light emission. Moreover, when the concentration is low, the resistivity increases and the blue emission intensity is also weak, making it unsuitable for practical use.
以上の様にＭＢＥおよびＭＯＣＶＤにより低抵抗の結晶
を成長させる事はできるが、不純物添加に伴う深い準位
の発光が見られ青色発光が阻害されて（発明が解決しよ
うとする問題点）
本発明は、青色発光素子の実現に不可欠な、電気的に低
抵抗でかつ室温青色発光を示す。Ｚｎ５ｘＳａ、−８結
晶を形成する技術を提供し、高効率の青色したＤの製造
方法を提供することを目的とする。As described above, it is possible to grow a low-resistance crystal by MBE and MOCVD, but due to the addition of impurities, deep level light emission is observed and blue light emission is inhibited (problem to be solved by the present invention). exhibits low electrical resistance and room-temperature blue light emission, which is essential for realizing a blue light-emitting device. The purpose of the present invention is to provide a technology for forming Zn5xSa, -8 crystals and to provide a highly efficient method for producing blue-colored D.
（問題点を解決するための手段）
ＺｎＳｘＳａｘ−ｘ結晶中に、電気伝導を得るための不
純物を添加する工程において、同時に添加した不純物と
同族の他の不純物を添加することにより、電気的に低抵
抗でかつ室温青色発光を示すＺｎ５ｘＳｘ−Ｘ結晶を形
成する。(Means for solving the problem) In the process of adding impurities to obtain electrical conduction in the ZnSxSax-x crystal, by adding other impurities of the same group as the impurities added at the same time, electrically low A Zn5xSx-X crystal that is resistive and emits blue light at room temperature is formed.
（作 用）
ＺｎＳｘＳｅｉ−２結晶中に、■族（Ａｌｌｌ、Ｇａ、
Ｉｎなど）及び■族（ＣＩ２．Ｂｒ、Ｉなど）のドナー
不純物をドープした時に長波長領域に現われる主要な発
光は、自己付活型発光（ＳＡ発光）として知られている
。(Function) In the ZnSxSei-2 crystal, group II (All, Ga,
The main light emission that appears in the long wavelength region when doped with donor impurities of group II (In, etc.) and (CI2, Br, I, etc.) is known as self-activated light emission (SA light emission).
この発光は、添加した不純物の形成するドナーレベルと
、ドナー不純物とＺｎの空孔子が複合して形成するアク
セプタレベルとの間のドナー・アクセプタ対発光である
ことが判っている。It is known that this light emission is a donor-acceptor pair light emission between a donor level formed by the added impurity and an acceptor level formed by a combination of the donor impurity and Zn vacancies.
従って、この長波長領域の発光を抑制するためには、Ｚ
ｎ空孔子の発生を抑えることが重要となる。Therefore, in order to suppress light emission in this long wavelength region, Z
It is important to suppress the generation of n-vacancies.
また、１族（Ｌｉ、 Ｎａなど）及び■族（Ｎ、Ｐ、Ａ
Ｓなど）をドープした時に同様な現象が見られ、この場
合には、Ｓｅ空孔子の発生を抑えることが重要となる。In addition, Group 1 (Li, Na, etc.) and Group II (N, P, A, etc.)
A similar phenomenon is observed when doping with S, etc.), and in this case, it is important to suppress the generation of Se vacancies.
これらの空孔子発生の一因として、添加した不純物原子
の半径と置換された原子半径が異なる為に格子歪示生じ
、この格子歪を緩和する為に近接の原子が空孔となるこ
とが考えられる。One of the reasons for the generation of these vacancies is that lattice distortion occurs due to the difference in the radius of the added impurity atom and the radius of the substituted atom, and in order to alleviate this lattice distortion, neighboring atoms become vacancies. It will be done.
本発明では、添加した不純物により生じる格子歪を補償
する様な原子半径を有した不純物を同時に添加すること
により、空孔子の発生を抑生じ、長波長領域の発光を抑
制することができる。In the present invention, by simultaneously adding an impurity having an atomic radius that compensates for the lattice distortion caused by the added impurity, it is possible to suppress the generation of vacancies and suppress light emission in the long wavelength region.
添加する不純物種および量は、表１に示す様な四面体配
位共有結合半径の値による、添加不純物と置換される原
子との不整の程度が目安となる。The type and amount of the impurity to be added is determined based on the degree of misalignment between the added impurity and the substituted atom based on the value of the tetrahedral coordination covalent bond radius as shown in Table 1.
（実施例） ＧａＡｓ基板上に成長させたＺｎ５ｅを例に説明する。(Example) This will be explained using Zn5e grown on a GaAs substrate as an example.
結晶成長は、ジメチル亜鉛（ＤＭＺｎ）およびジメチル
セレン（ＤＭＳｅ）を原料に用いたＭＯＣＶＤ法により
行なった。成長条件は、■族原料のモル供給量（ＤＭＺ
ｎ ）と、■族原料のモル供給量（ＤＭＳｅ）の比を（
ＤＭＺｎ） ／ （ＤＭＺｎ） −２とし、５００℃、
１気圧の条件下で行う。成長速度は、約５００人／ｗｉ
ｎであった。Crystal growth was performed by MOCVD using dimethylzinc (DMZn) and dimethylselenium (DMSe) as raw materials. The growth conditions are the molar supply amount (DMZ
n) and the molar supply amount (DMSe) of group II raw material (DMSe).
DMZn) / (DMZn) -2, 500℃,
It is carried out under the condition of 1 atm. The growth rate is approximately 500 people/wi
It was n.
アクセプタ不純物には、■族のＰを用い、フォスフイン
（ＰＨ３）ガスにより導入した。同時にドープした八３
は、アルシン（ＡｓＨ，）ガスにより導入した。As the acceptor impurity, P of group Ⅰ was used and introduced using phosphine (PH3) gas. 83 doped at the same time
was introduced by arsine (AsH,) gas.
第２図は、Ａｓをドープしないで、Ｐのみをドープした
場合の３２５ｎｍのＨｅ−Ｃｄレーザ光励起の室温ルミ
ネッセンススペクトルの例を示す、Ｐのドープ量は、（
ＰＨａ ） ／ （ＤＭＳｅ） ＝ ２ Ｘ １０−”
である、Ｐのみのドープでは、４７Ｏｎｍ付近の青色発
光強度と比べ、６１０ｎｍ付近の赤色発光強度の方が強
く、青色発光素子には全く適さない。FIG. 2 shows an example of the room temperature luminescence spectrum of 325 nm He-Cd laser light excitation when doping only P without doping As. The amount of P doped is (
PHa ) / (DMSe) = 2 x 10-”
In the case of P-only doping, the red emission intensity near 610 nm is stronger than the blue emission intensity near 47 Onm, and is not suitable for a blue light emitting device at all.
以下余白
表１
Ｚ’ｎＳｅ中のドーパントと原子不整
（Ｚｎ、Ｓｓ、Ｓの共有結合半径は、１．３１人、１．
１４人、１．０４人）これに対して、第１図は、本発明
の一実施例のフォトルミネッセンススペクトルである。Table 1: Dopants in Z'nSe and atomic asymmetry (covalent bond radii of Zn, Ss, and S are 1.31 and 1.
(14 people, 1.04 people) On the other hand, FIG. 1 shows the photoluminescence spectrum of one embodiment of the present invention.
上記と同一条件下で、Ｐに加えて、Ａｓを（Ａｓ）１．
） ／ （ＤＭＺｎ）＝ ｌ Ｘ １０−３添加して
いる。Ｐと同時にＡａをドープした場合には６１０ｎｍ
付近の赤色発光強度は抑制され、４７０ｎｍ付近の青色
発光が強く現われた。Under the same conditions as above, in addition to P, As (As)1.
) / (DMZn) = l x 10-3 is added. 610 nm when Aa is doped at the same time as P
The red light emission intensity in the vicinity was suppressed, and the blue light emission near 470 nm appeared strongly.
この様に、置換原子より小さい原子であるＰを添加する
際に同時に大きい原子であるＡａを添加したことによる
効果は明らかであり、これによって青色発光素子に適し
た結晶が得られた。In this way, the effect of adding Aa, which is a larger atom, at the same time as P, which is an atom smaller than the substituent atoms, is added, and a crystal suitable for a blue light-emitting element was thereby obtained.
尚、本発明は、上記実施例に限るものではない。Note that the present invention is not limited to the above embodiments.
Ｚｎ５ｘＳｅ、−ｘとする事により基板と格子整合をと
る事ができるので、さらに良質の結晶が得られる。By using Zn5xSe, -x, lattice matching with the substrate can be achieved, resulting in a crystal of even better quality.
Ｐ型ドーパントもＰに限ることなく、Ｖ族のＮ。The P-type dopant is not limited to P, but can also be N of the V group.
Ａａ、 Ｓｂなどにも用いることができる。また、ｎ型
ドーパントである■族のＡＱ、 Ｇａ、 Ｉｎ、 Ｔ（
１，■族のＣｌ３． Ｂｒ、 Ｉなとも用いることがで
きる。It can also be used for Aa, Sb, etc. In addition, AQ, Ga, In, T (
1, ■ Group Cl3. Br and I can also be used.
また、原料もＺｎ、Ｓ、およびＳｓ、そして■族原料の
いずれに関しても種々の組合わせで成長させる事が可能
である。成長条件も温度、圧カ、供給量等１種々変化さ
せることができる。In addition, it is possible to grow the raw materials in various combinations of Zn, S, Ss, and any of the Group Ⅰ raw materials. The growth conditions can also be changed in various ways, such as temperature, pressure, supply amount, etc.
成長方法に関しても、ＭＯＣＶＤ法に限らず、ＭＢＥ法
。The growth method is not limited to the MOCVD method, but also the MBE method.
ＬＰＥ法等広く応用できる。It can be widely applied to LPE method etc.
その他、本発明の骨子を逸脱しない範囲で種々変形して
用いることが出来る。In addition, various modifications can be made without departing from the gist of the present invention.
本発明により、青色発光材料であるＺｎ５ｘＳｅエーウ
（０≦Ｘ≦１）の室温で青色に発光する結晶を得ること
ができるようになった。さらに、上記結晶を用いたＭＩ
Ｓ型又はＰＮ接合型発光素子は青色の発光を示すように
なった。According to the present invention, it has become possible to obtain a crystal of Zn5xSe (0≦X≦1), which is a blue light-emitting material, that emits blue light at room temperature. Furthermore, MI using the above crystal
S-type or PN junction type light emitting devices now emit blue light.
第１図は本発明の一実施例である。Ｐ型ドーパントとし
てＰを用い、同時に同族のＡｓを添加したＺｎ５ａの室
温フォトルミネッセンススペクトルを示す特性図、第２
図はＰ型ドーパントとしてＰのみを添加したＺｎ５ｅの
結晶の室温スペクトルを示す特性図である。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男FIG. 1 shows an embodiment of the present invention. Characteristic diagram showing the room temperature photoluminescence spectrum of Zn5a using P as a P-type dopant and simultaneously adding As of the same group, 2nd
The figure is a characteristic diagram showing a room temperature spectrum of a Zn5e crystal to which only P is added as a P-type dopant. Agent Patent Attorney Nori Chika Yudo Kikuo Takehana
Claims (5)
を得る為の１つもしくは２つ以上の第１の不純物を添加
する際に、これと同時に第１の不純物添加により生じた
置換原子との原子半径の不整を緩和する様な第１の不純
物と同族であるもしくは２つ以上の第２の不純物を添加
することを特徴とするＺｎＳ＿ｘＳｅ＿１＿−＿ｘ（０
≦ｘ≦１）結晶の製造方法。(1) When adding one or more first impurities to obtain electrical conduction into ZnSe, Zns, and their mixed crystals, at the same time, the substitution atoms generated by the addition of the first impurities ZnS_xSe_1_-_x(0
≦x≦1) Method for producing crystal.
を得る為の不純物との置換サイトがIV族であることを特
徴とする特許請求の範囲第１項記載のＺｎＳ＿ｘＳｅ＿
１＿−＿ｘ（０≦ｘ≦１）結晶の製造方法。(2) ZnS_xSe_ according to claim 1, characterized in that the substitution site with an impurity for obtaining electrical conduction in ZnSe, ZnS and its mixed crystal is a group IV group.
1_−_x (0≦x≦1) crystal manufacturing method.
、第２の不純物がヒ素（Ａｓ）ないしは、アンチモン（
Ｓｂ）であることを特徴とする特許請求の範囲第２項記
載のＺｎＳ＿ｘＳｅ＿１＿−＿ｘ（０≦ｘ≦１）結晶の
製造方法。(3) The first impurity is nitrogen (N) or phosphorus (P)
, the second impurity is arsenic (As) or antimony (
A method for producing a ZnS_xSe_1_-_x (0≦x≦1) crystal according to claim 2, characterized in that the ZnS_xSe_1_-_x (0≦x≦1) crystal is Sb).
を得る為の不純物との置換サイトがII族であることを特
徴とする特許請求の範囲第１項記載のＺｎＳ＿ｘＳｅ＿
１＿−＿ｘ（０≦ｘ≦１）結晶の製造方法。(4) ZnS_xSe_ according to claim 1, characterized in that the substitution site with an impurity for obtaining electric conduction in ZnSe, ZnS and its mixed crystal is a group II group.
1_−_x (0≦x≦1) crystal manufacturing method.
ウム（Ｇａ）第２の不純物がインチラム（Ｉｎ）ないし
、タリウム（Ｔｌ）であることを特徴とする特許請求の
範囲第４項記載のＺｎＳ＿ｘＳｅ＿１＿−＿ｘ（０≦ｘ
≦１）結晶の製造方法。(5) ZnS_xSe_1_- according to claim 4, wherein the first impurity is aluminum (Al) or gallium (Ga) and the second impurity is indium (In) or thallium (Tl). ＿x(0≦x
≦1) Method for producing crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30652286A JPH07118455B2 (en) | 1986-12-24 | 1986-12-24 | Method for producing ZnSxSe (1) -x (0≤x≤1) crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30652286A JPH07118455B2 (en) | 1986-12-24 | 1986-12-24 | Method for producing ZnSxSe (1) -x (0≤x≤1) crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63160344A true JPS63160344A (en) | 1988-07-04 |
| JPH07118455B2 JPH07118455B2 (en) | 1995-12-18 |
Family
ID=17958037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30652286A Expired - Lifetime JPH07118455B2 (en) | 1986-12-24 | 1986-12-24 | Method for producing ZnSxSe (1) -x (0≤x≤1) crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118455B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0356059A2 (en) * | 1988-08-15 | 1990-02-28 | Gertrude F. Neumark | Process for doping crystals of wide band gap semiconductors |
| RU2664912C1 (en) * | 2017-11-16 | 2018-08-23 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Method of producing filters for ir range |
-
1986
- 1986-12-24 JP JP30652286A patent/JPH07118455B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0356059A2 (en) * | 1988-08-15 | 1990-02-28 | Gertrude F. Neumark | Process for doping crystals of wide band gap semiconductors |
| RU2664912C1 (en) * | 2017-11-16 | 2018-08-23 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Method of producing filters for ir range |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07118455B2 (en) | 1995-12-18 |
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