JPS63157443U - - Google Patents

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Publication number
JPS63157443U
JPS63157443U JP4580087U JP4580087U JPS63157443U JP S63157443 U JPS63157443 U JP S63157443U JP 4580087 U JP4580087 U JP 4580087U JP 4580087 U JP4580087 U JP 4580087U JP S63157443 U JPS63157443 U JP S63157443U
Authority
JP
Japan
Prior art keywords
reel
wire
plastic deformation
wound
upstream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4580087U
Other languages
English (en)
Japanese (ja)
Other versions
JPH043699Y2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4580087U priority Critical patent/JPH043699Y2/ja
Publication of JPS63157443U publication Critical patent/JPS63157443U/ja
Application granted granted Critical
Publication of JPH043699Y2 publication Critical patent/JPH043699Y2/ja
Expired legal-status Critical Current

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  • Wire Processing (AREA)
JP4580087U 1987-03-30 1987-03-30 Expired JPH043699Y2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4580087U JPH043699Y2 (enrdf_load_stackoverflow) 1987-03-30 1987-03-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4580087U JPH043699Y2 (enrdf_load_stackoverflow) 1987-03-30 1987-03-30

Publications (2)

Publication Number Publication Date
JPS63157443U true JPS63157443U (enrdf_load_stackoverflow) 1988-10-14
JPH043699Y2 JPH043699Y2 (enrdf_load_stackoverflow) 1992-02-05

Family

ID=30864867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4580087U Expired JPH043699Y2 (enrdf_load_stackoverflow) 1987-03-30 1987-03-30

Country Status (1)

Country Link
JP (1) JPH043699Y2 (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858523B2 (en) 2000-01-18 2005-02-22 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US6878507B2 (en) 1998-02-25 2005-04-12 Micron Technology, Inc. Semiconductor processing methods
US7067415B2 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7151054B2 (en) 1998-09-03 2006-12-19 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US7279118B2 (en) 1998-12-23 2007-10-09 Micron Technology, Inc. Compositions of matter and barrier layer compositions
US7576400B1 (en) 1998-09-03 2009-08-18 Micron Technology, Inc. Circuitry and gate stacks

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878507B2 (en) 1998-02-25 2005-04-12 Micron Technology, Inc. Semiconductor processing methods
US7626238B2 (en) 1998-02-25 2009-12-01 Micron Technology, Inc. Semiconductor devices having antireflective material
US7151054B2 (en) 1998-09-03 2006-12-19 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US7576400B1 (en) 1998-09-03 2009-08-18 Micron Technology, Inc. Circuitry and gate stacks
US7279118B2 (en) 1998-12-23 2007-10-09 Micron Technology, Inc. Compositions of matter and barrier layer compositions
US7067415B2 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7078356B2 (en) 1999-09-01 2006-07-18 Micron Technology, Inc. Low K interlevel dielectric layer fabrication methods
US7521354B2 (en) 1999-09-01 2009-04-21 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7078328B2 (en) 2000-01-18 2006-07-18 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US7435688B2 (en) 2000-01-18 2008-10-14 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US6858523B2 (en) 2000-01-18 2005-02-22 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US7045277B2 (en) 2000-01-18 2006-05-16 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US7638436B2 (en) 2000-01-18 2009-12-29 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials

Also Published As

Publication number Publication date
JPH043699Y2 (enrdf_load_stackoverflow) 1992-02-05

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