JPS63156092A - Single crystal growth device - Google Patents
Single crystal growth deviceInfo
- Publication number
- JPS63156092A JPS63156092A JP30116186A JP30116186A JPS63156092A JP S63156092 A JPS63156092 A JP S63156092A JP 30116186 A JP30116186 A JP 30116186A JP 30116186 A JP30116186 A JP 30116186A JP S63156092 A JPS63156092 A JP S63156092A
- Authority
- JP
- Japan
- Prior art keywords
- seed
- holder
- hole
- single crystal
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract 2
- 239000000155 melt Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 8
- 230000014759 maintenance of location Effects 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
シード・ホルダーをアルミナ・セラミック製の部品によ
って構成された単結晶成長装置である。[Detailed Description of the Invention] [Summary] This is a single crystal growth apparatus in which a seed holder is constructed of parts made of alumina ceramic.
本発明は単結晶成長装置、特にシード・ホルダ一部を改
良した単結晶成長装置に関する。近年、電子技術の発達
に伴い、高純度単結晶体の必要性が高まってきた。また
、高密度化、集積回路の歩留り向上のために大口径の単
結晶体の要望が強まっている。本発明は、炉内汚染を生
ずることなく、大重量の結晶体を支えることのできるシ
ート・ホルダーを具備した単結晶成長装置に関する。The present invention relates to a single crystal growth apparatus, and more particularly to a single crystal growth apparatus in which a part of the seed holder is improved. In recent years, with the development of electronic technology, the need for high purity single crystals has increased. In addition, there is an increasing demand for large-diameter single crystals in order to increase density and improve the yield of integrated circuits. The present invention relates to a single crystal growth apparatus equipped with a seat holder that can support a large weight of crystal without contaminating the inside of the furnace.
シリコン等の単結晶を得る方法として引上法（チョクラ
ルスキー法・ＣＺ法）、フロート・ゾーン法（ＦＺ法）
等が広く利用されている。引上法は、大直径結晶が得ら
れる利点を有し、ＦＺ法は高純度結晶が得られるという
利点を有する。本発明はＣ２法の単結晶成長装置に関す
る。Pulling method (Czochralski method/CZ method) and float zone method (FZ method) are methods for obtaining single crystals of silicon etc.
etc. are widely used. The pulling method has the advantage that large diameter crystals can be obtained, and the FZ method has the advantage that high purity crystals can be obtained. The present invention relates to a C2 method single crystal growth apparatus.
ＣＺ法は第５図に示すように多結晶とドープ剤を石英製
のるつぼ１内に入れ、周囲のヒーター２によって熔解し
た後、シード（種結晶）３の先端を溶液に付ける。３の
先端はわずかに溶解し、温度平衡の保たれたるつぼ内で
引上軸４およびるつぼ１を回転させながら引き上げられ
る。その後、引き上げ速度と温度を調整することにより
単結晶を希望の直径に太らせ、目的の下限抵抗率の推定
長さまで引き上げを行う。In the CZ method, as shown in FIG. 5, a polycrystal and a doping agent are placed in a quartz crucible 1, and after being melted by a surrounding heater 2, the tip of a seed (seed crystal) 3 is attached to the solution. The tip of 3 is slightly melted and is pulled up while rotating the pulling shaft 4 and crucible 1 in a crucible whose temperature is maintained in equilibrium. Then, by adjusting the pulling speed and temperature, the single crystal is thickened to the desired diameter, and pulled to the estimated length that provides the desired lower limit resistivity.
以上のＣＺ法において、引上軸の先端で結晶の種となる
シード・ホルダーとしてはステンレス製、モリブデン製
、カーボン製のものが主に使用されていた。In the above CZ method, the seed holder that serves as the crystal seed at the tip of the pulling shaft is mainly made of stainless steel, molybdenum, or carbon.
ステンレス製のシード・ホルダーの場合、材料費が安く
、加工が容易である利点はあるが、融点が低（（約１４
００℃） 、１０００℃以上の高温下でステンレス合金
自身から鉄原子がガス状となって発生し易（、炉内およ
び溶液、結晶を汚染するという欠点があった。Stainless steel seed holders have the advantages of low material cost and easy processing, but have a low melting point (approx.
00°C), the stainless steel alloy itself tends to generate gaseous iron atoms at high temperatures of 1000°C or higher (there was a drawback that it contaminated the inside of the furnace, the solution, and the crystals).
モリブデン製のシード・ホルダーの場合は融点が高（（
約３０００℃以上）、純粋なものは不純物ガスを発生し
難いが、高価である上に硬いために加工が困難であり、
超硬バイト等で切削加工しなければならない。また純粋
なモリブデンはシリコンと約４００℃で反応し、モリブ
デン・シリサイド（ＭｏＳ ｉ）となるので、シリコン
単結晶の成長用としては好ましくない。Seed holders made of molybdenum have a high melting point ((
(approximately 3,000℃ or higher), pure materials are difficult to generate impurity gases, but are difficult to process because they are expensive and hard.
It must be cut with a carbide tool etc. Further, pure molybdenum reacts with silicon at about 400° C. to form molybdenum silicide (MoSi), so it is not suitable for growing silicon single crystals.
更にカーボン製のシード・ホルダーの場合は熱に強く不
純物濃度を低くすることができ、加工も容易であるが、
成長したシリコン結晶を支えるには機械的な強度の点か
ら問題がある。例えば現在５０ｋｇ０長尺単結晶が製造
されているが、そのような使用例においては機械的強度
が十分でない。Furthermore, carbon seed holders are heat resistant, have a low impurity concentration, and are easy to process.
There is a problem in terms of mechanical strength in supporting the grown silicon crystal. For example, long single crystals weighing 50 kg are currently produced, but their mechanical strength is insufficient for such applications.
シード・ホルダーの好ましい条件としては高融点であり
、高温下での引張荷重に十分耐え、かつ不純物含有量の
少ない素材を用いることである。The preferred conditions for the seed holder are to use a material that has a high melting point, can sufficiently withstand tensile loads at high temperatures, and has a low content of impurities.
しかし、上述した３つの素材はそれぞれ一長一短があり
、特にシリコン単結晶成長用としては上記した問題があ
ったものである。However, each of the above-mentioned three materials has its own advantages and disadvantages, and the above-mentioned problems are particularly true when used for silicon single crystal growth.
本発明はこのような点に鑑みて創作されたもので、汚染
のおそれがな（、高温に耐え、機械的強度が大で、加工
が容易で比較的安価な材料で作ったシード・ホルダーを
もった単結晶成長装置を提供することを目的とする。The present invention was created with these points in mind, and it provides a seed holder made of a material that is free from contamination, resistant to high temperatures, has high mechanical strength, is easy to process, and is relatively inexpensive. The purpose of the present invention is to provide a single crystal growth device with excellent performance.
本発明は上記従来の欠点に鑑みなされたものでアルミナ
・セラミックでシード・ホルダーを製造し、高温に耐え
（融点〜２０５０℃）鉄原子等ガスの発生するのを防ぐ
と共に大ｉｔの結晶を支持できるようにしたシード・ホ
ルダーを備えた単結晶装置を提供する。The present invention was made in view of the above-mentioned conventional drawbacks, and the seed holder is made of alumina ceramic, which can withstand high temperatures (melting point ~2050℃), prevents the generation of gases such as iron atoms, and supports large IT crystals. To provide a single-crystal device equipped with a seed holder capable of producing a single crystal.
第１図は本発明実施例の断面図で、図中、５はシード・
ホルダー、６はシート、７は保持穴、８はピン穴、９は
キー溝、１０はビンである。FIG. 1 is a cross-sectional view of an embodiment of the present invention, in which 5 is a seed
holder, 6 is a sheet, 7 is a holding hole, 8 is a pin hole, 9 is a keyway, and 10 is a bottle.
本発明実施例は、ＣＺ法による単結晶成長のための装置
において、シード・ホルダー５にはシード６を保持する
保持穴７とそれに直交するピン穴８が設けられてなり、
ピン穴には、シード６に形成した半円状断面のキー溝９
に嵌合されるピン１０が差し込まれてシード６を保持す
る構造のもので、これら部品のすべてはアルミナ・セラ
ミックで作られたものである。The embodiment of the present invention is an apparatus for single crystal growth using the CZ method, in which a seed holder 5 is provided with a holding hole 7 for holding a seed 6 and a pin hole 8 perpendicular to the holding hole 7.
The pin hole has a key groove 9 with a semicircular cross section formed in the seed 6.
It has a structure in which a pin 10 is inserted to hold the seed 6, and all of these parts are made of alumina ceramic.
上記した構成によって、シード６はシード・ホルダー７
によって強固に保持される一方で、前記諸都市はすべて
アルミナ・セラミック製のものであるので、高温に耐え
、汚染のおそれがな（、機械的強度が大である一方で加
工が容易である。With the above configuration, the seed 6 is transferred to the seed holder 7.
All of the above-mentioned cities are made of alumina ceramic, so they can withstand high temperatures and are free from contamination (and have high mechanical strength while being easy to process).
以下、図面を参照して本発明の実施例を詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は本発明の単結晶成長装置に使用するシード・ホ
ルダー５の斜視図、第３図はシード・ホルダーの第１図
の紙面の垂直方向の断面図、第４図はシード６の斜視図
である。FIG. 2 is a perspective view of the seed holder 5 used in the single crystal growth apparatus of the present invention, FIG. 3 is a sectional view of the seed holder in a direction perpendicular to the plane of the paper in FIG. 1, and FIG. 4 is a perspective view of the seed 6. It is a diagram.
シード・ホルダー５は第２図に示される如く先細りの円
筒状形状のものであり、先端テーバ部の軸芯に保持穴７
が穿設されている。また、保持穴フの奥端近傍には、該
保持穴７に直交してピン穴８が穿設されている。シード
・ホルダー５はアルミナ・セラミックで形成されている
。The seed holder 5 has a tapered cylindrical shape as shown in FIG.
is drilled. Further, a pin hole 8 is bored near the rear end of the holding hole 7 so as to be perpendicular to the holding hole 7. The seed holder 5 is made of alumina ceramic.
一方、シード６は第４図に示すように基端部６ａには半
円状断面のキー溝９が穿設されている。On the other hand, as shown in FIG. 4, the seed 6 has a keyway 9 with a semicircular cross section formed in the base end 6a.
以上のように構成されたシード・ホルダー５の保持穴７
にシード６を基端から挿入し、ピン穴８からピン１０を
差し込むと、シード６のキー溝９に係合しシード・ホル
ダー５とシード６が固定される。なお、これらの部品も
アルミナ・セラミックで形成した。Holding hole 7 of seed holder 5 configured as above
When the seed 6 is inserted from the base end and the pin 10 is inserted through the pin hole 8, it engages with the keyway 9 of the seed 6 and the seed holder 5 and the seed 6 are fixed. Note that these parts were also made of alumina ceramic.
しかる後に、第５図に示される装置を用いて従来例同様
にＣＺ法にて単結晶成長を行った。Thereafter, single crystal growth was performed using the CZ method as in the conventional example using the apparatus shown in FIG.
以上のように構成されたシード・ホルダーを備えた単結
晶装置によれば、
■高温（約１０００℃以上）に耐え得る、■鉄等の重金
属原子ガスの発生を防止できるので炉内汚染がないため
、重金属汚染の少ないｆｌｉ結晶を製造することができ
る、
■成長した単結晶のｆｆ１ｌを十分に保持することがで
きる、
■安価に製造できる、
などの効果が確認された。According to the single-crystal device equipped with the seed holder configured as described above, it can: - withstand high temperatures (approximately 1000°C or higher); and - prevent the generation of atomic gases from heavy metals such as iron, so there is no contamination in the furnace. Therefore, the following effects were confirmed: fli crystals with less heavy metal contamination can be produced; (1) ff1l of the grown single crystal can be sufficiently retained; and (2) fli crystals can be produced at low cost.
第１図は本発明にかかるシード・ホルダーとシードを示
す断面図、
第２図は本発明にかかるシード・ホルダーの斜視図、
第３図は本発明にかかるシード・ホルダーとシードの嵌
合状態を示す断面図、
第４図はシードの斜視図、
第５図は単結晶成長装置の概略構成図である。
第１図から第５図までにおいて、
１はるつぼ、
２はヒータ、
３はシード、
４は引上軸、
５はシード・ホルダー、
６はシード、
６ａはシードの基端部、
７は保持穴、
８はピン穴、
９はキー溝、
１０はピンである。
代理人 弁理士 久木元 彰
復代理人 弁理士 大 菅 義 之
岑売輯じかシるシード°ホｌし７−上シート【ネロ１面
圀第１図
堵５Ｐ１１：か喝レード糸ＩＬ／ｆ−め輯刑１口第２図
第３図
シードの斜視図
ｖ４糸も轟に＆懺１０操皓填八閃
第５図Fig. 1 is a sectional view showing a seed holder and a seed according to the present invention, Fig. 2 is a perspective view of a seed holder according to the present invention, and Fig. 3 is a fitted state of the seed holder and seed according to the present invention. FIG. 4 is a perspective view of the seed, and FIG. 5 is a schematic diagram of the single crystal growth apparatus. 1 to 5, 1 is a crucible, 2 is a heater, 3 is a seed, 4 is a pulling shaft, 5 is a seed holder, 6 is a seed, 6a is the base end of the seed, 7 is a holding hole , 8 is a pin hole, 9 is a keyway, and 10 is a pin. Agent Patent Attorney Akifuku Agent Patent Attorney Yoshio Suga - Mechanism 1 Mouth Figure 2 Figure 3 Perspective view of the seed v4 Thread also Todoroki & Print 10 Operation Eight Flashes Figure 5
Claims (1)
単結晶を成長させるチョクラルスキー法に用いる装置に
おいて、 シード・ホルダー（５）は先端部分がテーパした円筒状
形状のものでその軸芯に沿ってテーパした先端部分から
円筒状部のほぼ中央で終る保持穴（７）が形成されてな
り、 保持穴（７）に直交するピン穴（８）が円筒部の保持穴
（７）が終る前の部分に形成され、シード（６）が保持
穴（７）内に挿入されたとき、ピン（１０）はシード（
６）のキー溝（９）と嵌合した状態でピン穴（８）内に
配置される構成であり、 前記した諸部品はセラミック材で作られたものであるこ
とを特徴とする単結晶成長装置。[Claims] In an apparatus used in the Czochralski method in which a seed (seed crystal) is immersed in a melt and continuously pulled up to grow a single crystal, the seed holder (5) is a cylinder with a tapered tip. A holding hole (7) is formed from the tip tapered along the axis of the cylinder and ends at approximately the center of the cylindrical part, and a pin hole (8) perpendicular to the holding hole (7) is formed in the cylindrical part. The pin (10) is formed in the part before the holding hole (7) ends, and when the seed (6) is inserted into the holding hole (7), the pin (10)
6) is arranged in the pin hole (8) while being fitted with the key groove (9), and the above-mentioned parts are made of ceramic material. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30116186A JPS63156092A (en) | 1986-12-19 | 1986-12-19 | Single crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30116186A JPS63156092A (en) | 1986-12-19 | 1986-12-19 | Single crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63156092A true JPS63156092A (en) | 1988-06-29 |
Family
ID=17893520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30116186A Pending JPS63156092A (en) | 1986-12-19 | 1986-12-19 | Single crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63156092A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106611A (en) * | 1998-10-06 | 2000-08-22 | Seh-America, Inc. | Insulating and warming shield for a seed crystal and seed chuck and method for using the device |
-
1986
- 1986-12-19 JP JP30116186A patent/JPS63156092A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106611A (en) * | 1998-10-06 | 2000-08-22 | Seh-America, Inc. | Insulating and warming shield for a seed crystal and seed chuck and method for using the device |
| US6183556B1 (en) | 1998-10-06 | 2001-02-06 | Seh-America, Inc. | Insulating and warming shield for a seed crystal and seed chuck |
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