JPS63155615A - Photoresist wafer exposure system - Google Patents

Photoresist wafer exposure system

Info

Publication number
JPS63155615A
JPS63155615A JP61302612A JP30261286A JPS63155615A JP S63155615 A JPS63155615 A JP S63155615A JP 61302612 A JP61302612 A JP 61302612A JP 30261286 A JP30261286 A JP 30261286A JP S63155615 A JPS63155615 A JP S63155615A
Authority
JP
Japan
Prior art keywords
wafer
photoresist
gauge
pattern mask
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61302612A
Other languages
Japanese (ja)
Inventor
Mamoru Yoshiyama
愿山 護
Masahiko Kurosaki
黒崎 雅彦
Seiichi Matsuguchi
松口 征一
Toshiharu Uoshima
魚島 俊治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
D S GIKEN KK
Original Assignee
D S GIKEN KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by D S GIKEN KK filed Critical D S GIKEN KK
Priority to JP61302612A priority Critical patent/JPS63155615A/en
Publication of JPS63155615A publication Critical patent/JPS63155615A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To execute the highly accurate alighment by a method wherein the connection among a wafer, a gauge and a mask frame is detected by making use of the air pressure at a bearing part which is composed of a spherical material and a spherical support and can be inclined freely in the 360 deg. direction while the wafer is made to face a pattern mask. CONSTITUTION:A prealigned photoresist wafer W is mounted on a wafer stage 10. After a gauge arm 4 has been advanced, the wafer stage 10 is pushed up. The under surface of a hollow-cylindrical gauge 3 on the gauge arm 4 is pressed to the periphery of the wafer W while its top is pressed to a mask frame 2. The wafer stage 10 is supported on a spherical and sliding part which can be inclined horizontally in the 360 deg. direction, that is to say, on a spherical material 12 and a spherical support 14. The bottom face of the frame 2 and the face of the wafer W on the wafer stage 10 are made to face in parallel with each other. The gap between the material 12 and the support 14 is made to be smooth by compressed air. The contact at both edges of the gauge 3 is detected by the compressed air. By this method, the highly accurate alignment is executed.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、電子工業分野の集積回路の製造工程で、集
積回路のパターンを焼付けるために行うフォトレジスト
ウェハ露光装置、特にフォトレジストウェハの保持部の
構造、ならびに焼付のためのパターンとの位置ならびに
方向の整合、すなわちアライメント手段に関する。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a photoresist wafer exposure apparatus used for printing integrated circuit patterns in the integrated circuit manufacturing process in the electronics industry, and particularly to a photoresist wafer exposure apparatus. The present invention relates to the structure of the holding portion and the positional and directional alignment with the pattern for printing, that is, the alignment means.

(従来の技術) 一般に、表面がフォトレジスト膜で被覆された物品、す
なわちフォトレジストウェハの取扱いには汚損・暇等を
生じないために、ウェハの表面を摩擦しない様な配慮が
要求される。
(Prior Art) In general, when handling an article whose surface is coated with a photoresist film, that is, a photoresist wafer, care must be taken not to rub the surface of the wafer in order to avoid staining or damage.

また、立体構造の半導体素子の製造に際してはそれぞれ
のフォトレジストウェハの表裏に二面に分けて、所定位
置にそれぞれのパターンを焼付けることが行われている
。この場合、フォトレジストウェハ上に焼付けられたパ
ターンの位置を知るために、それぞれのフォトレジスト
ウェハの外縁円周に直線の切り欠きのオリエンテーショ
ンフラットを設け、第2回目の焼付の際に概略的なパタ
ーンの位置の整合のための謂わゆるプレアライメントが
行われている。
Furthermore, when manufacturing a semiconductor element having a three-dimensional structure, each photoresist wafer is divided into two sides, the front and the back, and patterns are printed on each side at predetermined positions. In this case, in order to know the position of the pattern baked on the photoresist wafer, an orientation flat of a straight notch is provided on the outer circumference of each photoresist wafer, and a rough orientation flat is provided during the second baking. So-called pre-alignment is performed to match the positions of the patterns.

プレアライメントされたフォトレジストウェハを昭和6
0年3月6日の特許1ill(特願昭6O−04522
4)r表裏各パターンの整合露光装置コの特許請求の範
囲第1項および第2項記載の方法の如く、順次にそれぞ
れその表裏両面に焼付けるパターンとのアライメント 
(整合)を行ってからフォトレジストウェハをパターン
マスクに接近或は密着させて露光している。
Pre-aligned photoresist wafer
Patent 1ill dated March 6, 1996
4) Alignment of each pattern on the front and back sides Alignment with the patterns sequentially printed on both the front and back sides, as in the method described in claims 1 and 2 of the exposure apparatus
After performing (alignment), the photoresist wafer is brought close to or in close contact with the pattern mask and exposed.

(発明が解決しようとする問題点) 前記のアライメントに際しては、パターンマスクに対し
てフォトレジストウェハは、無接触状態の平行な面上で
、直交方向X−Y並びに回転の移動を行うための間隙、
すなわちアライメントギヤツブを介して対峙させること
が要望されている。
(Problems to be Solved by the Invention) During the above alignment, the photoresist wafer is moved in the orthogonal direction X-Y and rotationally on a plane parallel to the pattern mask in a non-contact state. ,
In other words, it is desired that they face each other via an alignment gear.

然るに、互いに離隔された2面間の距離を変化させる機
構の場合、これら2回を正確な平行で支承することは離
しく、さらに片方の面を構成するフォトレジストウェハ
には、厚みの偏差や湾曲も予想されので高精度の平行度
を得ることは困難であった。
However, in the case of a mechanism that changes the distance between two surfaces separated from each other, it is difficult to support these two surfaces in accurate parallelism, and furthermore, the photoresist wafer constituting one surface has thickness deviations and Since curvature was also expected, it was difficult to obtain highly accurate parallelism.

また、アライメント終了後の露光に際しては、露光(焼
付)に用いる光源の種類に応じて異なるが、一般的にパ
ターンマスクとフォトレジストウェハとは密着を完全に
することが要求される。この場合は勿論であるが、フォ
トレジストウェハやガラス材のパターンマスクに必要以
上の力が加わらない配慮が必要である。
Further, during exposure after alignment, it is generally required that the pattern mask and the photoresist wafer be in perfect contact, although this varies depending on the type of light source used for exposure (baking). In this case, of course, care must be taken not to apply more force than necessary to the photoresist wafer or the glass pattern mask.

さらにまた、アライメントに際しては、位置合わせ用マ
ークを顕微鏡を介して観察するので光学系の視野の制限
を受け、位置合わせ用マークの捕捉が困難な欠点の改善
が要望されている。
Furthermore, during alignment, since the alignment marks are observed through a microscope, the field of view of the optical system is limited, and there is a demand for an improvement in the drawback that it is difficult to capture the alignment marks.

(問題点を解決するための手段) 上記の問題点を解決するために下記のフォトレジストウ
ェハ露光装置を提供せんとする。
(Means for Solving the Problems) In order to solve the above problems, we provide the following photoresist wafer exposure apparatus.

1、パターンマスクを支持するマスクフレームと、フォ
トレジストウェハを支持するウェハ台とこれら画フレー
ムの間に進退自在で、内径がフォトレジスタウェハの有
効利用範囲径より少なくとも大きい中空円筒の所定長の
ゲージが取り付けられたゲージアームとを備え、さらに
前記ウェハ台の支承部に配設され、中心を上側とした椀
形状の球面摺動支承機構と、この1習動面の間隙に圧力
流体を供給する手段と、この間隙部の内圧を検知する手
段と、前記ゲージ−を介して前記マスクフレームの下面
と前記ウェハ台とを圧接させる手段とを備え、前記間隙
部の内圧の検知信号により前記阿フレームの圧接を11
4g1するフォトレジストウエバ露光装W。
1. A hollow cylindrical gauge with a predetermined length that can move forward and backward between the mask frame that supports the pattern mask, the wafer stand that supports the photoresist wafer, and these image frames, and whose inner diameter is at least larger than the diameter of the effective range of the photoresist wafer. and a gauge arm to which a gauge arm is attached, and further includes a bowl-shaped spherical sliding support mechanism disposed on the support portion of the wafer table with the center facing upward, and supplying pressurized fluid to the gap between this one dynamic surface. means for detecting the internal pressure in the gap, and means for bringing the lower surface of the mask frame into pressure contact with the wafer stand via the gauge, and detecting the internal pressure in the gap by the detection signal of the internal pressure in the gap. Pressure welding of 11
4g1 photoresist web exposure system W.

2、前項記載のフォトレジストウェハ露光装置において
、プレアライメントされたフォトレジストウェハを前記
パターンマスクと平行な面で、回転および互に直交する
X−Y軸に沿ってそれぞれ移動させるそれぞれの手段と
、前記パターンマスクに対応したフォトレジストウェハ
の位置を検出する手段と、これら回転ならびに移動量を
記憶する手段と、これらの記憶値によりフォトレジスト
ウェハの方向と位置との概略設定をする作業原点機能電
気回路とを備えたフォトレジストウェハ露光装置。
2. In the photoresist wafer exposure apparatus described in the preceding section, respective means for rotating and moving the pre-aligned photoresist wafer in a plane parallel to the pattern mask and along X-Y axes orthogonal to each other; A means for detecting the position of the photoresist wafer corresponding to the pattern mask, a means for storing the rotation and movement amounts, and a work origin function electrical unit for roughly setting the direction and position of the photoresist wafer based on these stored values. A photoresist wafer exposure device equipped with a circuit.

(作用) 前記手段の第1項に記載のものは、プレアライメントさ
れたフォトレジストウェハをウェハ台上に載置し、ゲー
ジアームを進出させた後ウェハ台を押し上げ、ゲージア
ーム上の中空円筒の前記ゲージの下面をフォトレジスト
ウェハの周縁部に、上面をマスクフレームにそれぞれ押
し付ける。
(Function) In the method described in item 1 above, a pre-aligned photoresist wafer is placed on a wafer stand, a gauge arm is advanced, the wafer stand is pushed up, and the hollow cylinder on the gauge arm is pushed up. The lower surface of the gauge is pressed against the periphery of the photoresist wafer, and the upper surface is pressed against the mask frame.

他方ウェハ台は水平360度方向に傾動自在な球面摺動
部上で支承されているので、ゲージの上下両面の平行面
により、マスクフレームの底面とウェハ台上のフォトレ
ジストウェハの面とは、互いに平行な状態に対峙させら
れる。また球面摺動部の間隙は圧力空気によってその摺
動が滑らかにされていると共に、その空気圧により前記
のゲージの両端部の圧接を検知して過大な加圧を防止す
る。
On the other hand, since the wafer stand is supported on a spherical sliding part that can be tilted horizontally 360 degrees, the bottom surface of the mask frame and the surface of the photoresist wafer on the wafer stand are They are forced to face each other in a parallel state. Moreover, the sliding movement of the gap between the spherical sliding parts is made smooth by pressurized air, and the air pressure detects pressure contact between both ends of the gauge to prevent excessive pressurization.

すなわち、前記ゲージの長さとマスクフレームの厚みと
の寸法に対応した精度で制御して、ウェハ台ヲマスクフ
レームに近付けて、パターンマスクを破損するおそれも
なく、無接触でマスクパターンに対しフォトレジストウ
ェハを高精度の寸法間隔の平行な面上で、回転並びに移
動させるためのアライメントギャップを得る事ができる
That is, the wafer stand can be moved close to the mask frame by controlling the length of the gauge with precision corresponding to the thickness of the mask frame, and the photoresist can be applied to the mask pattern without contact, without the risk of damaging the pattern mask. It is possible to obtain an alignment gap for rotating and moving the wafer on parallel planes with highly accurate dimensional spacing.

したがって、顕微鏡によるアライメントの精度を高め、
また露光に際してその直前の空隙(アライメントギャッ
プ)の再現性が高くて空隙の寸法精度も優れているので
、パターンマスクにフォトレジストウェハを密着させて
露光する場合でも、前記空隙寸法に対応した寸法でフォ
トレジストウェハをパターンマスクに向うで持ち上げて
、パターンマスクを破損のおそれがなく、十分な密着も
可能になる。
Therefore, increasing the accuracy of microscopic alignment,
In addition, the reproducibility of the gap immediately before the alignment gap (alignment gap) during exposure is high, and the dimensional accuracy of the gap is also excellent. By lifting the photoresist wafer toward the pattern mask, sufficient adhesion can be achieved without fear of damaging the pattern mask.

前記手段の第2項に記載のものは、プレアライメントさ
れたフォトレジストウェハを露光装置で高精度のアライ
メントを行う際には、焼付対象のフォトレジストウェハ
を回転(θ角)や移動(X軸、Y軸)させ、フォトレジ
ストウェハ上の合わせマークを高倍率の顕微鏡で捜す。
The method described in item 2 of the above means rotates (θ angle) or moves (X-axis) the photoresist wafer to be printed when performing high-precision alignment of the pre-aligned photoresist wafer with an exposure device. , Y-axis) and locate the alignment mark on the photoresist wafer with a high magnification microscope.

しかしながら顕微鏡の光学的視野が小さいので、この発
明の装置は操作の際にこれらの値を記憶設定させておき
、アライメント作業に先立ち前記記憶値に対応させて前
記回転並びに移動を行わせて、アライメント作業の迅速
化を計る。
However, since the optical field of view of the microscope is small, the device of the present invention stores and sets these values during operation, and prior to alignment work, the rotation and movement are performed in accordance with the stored values, and alignment is performed. Plan to speed up work.

(実施例) 第1図はこの発明の一実施例の構成説明図で一部は説明
のために破断して示しである。、第2図はこの発明のも
のに利用される原点作業機能の電気回路のブロック図で
ある。
(Embodiment) FIG. 1 is an explanatory diagram of the configuration of an embodiment of the present invention, and a portion thereof is shown broken away for explanation. , FIG. 2 is a block diagram of the electric circuit of the origin work function utilized in the present invention.

11EI図において(1)はパターンマスク、(2)l
;i窓枠状のマスクフレームでパターンマスク(1)が
窓部周縁の下面に真空手段(図示されていない)吸着さ
れている。
In Figure 11EI, (1) is a pattern mask, (2) l
;i A pattern mask (1) is suctioned to the lower surface of the window periphery by vacuum means (not shown) in a window frame-shaped mask frame.

パターンマスク(1)は透明なガラス板でその下面に、
焼付のための露光されるフォトレジストウェハW(以下
ウェハと記す)に焼付けるパターンが形成されている。
The pattern mask (1) is a transparent glass plate with a
A pattern to be printed is formed on a photoresist wafer W (hereinafter referred to as wafer) that is exposed to light for printing.

なお、このパターンにはアライメント用の合わせマーク
が付されている。さらに、この下面とパターンマスク(
1)の下面がが接触する上面との厚みDは高精度に加工
しである。
Note that alignment marks are attached to this pattern. Furthermore, this bottom surface and pattern mask (
1) The thickness D between the bottom surface and the top surface that it contacts is machined with high precision.

(3)は中空円筒の長さがLのゲージシリンダー(以下
ケージと記す)て、この内径はウェハWの有効使用範囲
の径より少なくとも大でかつウェハWの直径より小であ
る。(4)はゲージ(3)を支承してマスクフレーム(
2)とウェハWとの間に進退させるゲージアームで、図
示の様にゲージ(3)の上部外周には鍔状の突起部を設
け、ゲージアーム(4)に上下に摺動自在に取り付られ
たゲージの脱落を防止している。(5)は透明なガラス
材の吸着板で、アライメントのための光の通過部分以外
には通気孔(6)が分散配設されている。(7)は顕微
鏡の鏡胴を挿入する中間胴で前記通気孔(6)への負圧
管路(8)が上下に貫通し、側面には顕微鏡の鏡胴挿入
孔(9)が窄設されている。(10)は前記の吸着板(
5)を保持するウェハ台、(11)は吸着板(5)を囲
んでウェハ台(10)に気密的に取り付けられた可撓性
材シールで、ゲージ(3)が取り除かれてウェハ台(1
0)が、パターンマスク (1)に接近した状態でマス
クフレーム(2)の下面に接触し、前記通気孔(6)か
らウェハWとパターンマスク(1)との間を排気して密
着を容易にする。
(3) is a gauge cylinder (hereinafter referred to as cage) having a hollow cylinder length L, and the inner diameter of the gauge cylinder is at least larger than the diameter of the effective usable range of the wafer W and smaller than the diameter of the wafer W. (4) supports the gauge (3) and the mask frame (
2) and the wafer W. As shown in the figure, a flange-like protrusion is provided on the upper outer periphery of the gauge (3), and the gauge arm (4) is attached to the gauge arm (4) so as to be slidable up and down. This prevents the attached gauge from falling off. (5) is an adsorption plate made of a transparent glass material, and ventilation holes (6) are distributed in areas other than the portion through which light passes for alignment. (7) is an intermediate barrel into which the lens barrel of the microscope is inserted, and a negative pressure pipe (8) to the ventilation hole (6) passes through it vertically, and a microscope lens barrel insertion hole (9) is narrowed on the side. ing. (10) is the suction plate (
The wafer stand (11) that holds the wafer stand (5) is a flexible material seal that is airtightly attached to the wafer stand (10) surrounding the suction plate (5), and when the gauge (3) is removed, the wafer stand (11) 1
0) comes into contact with the lower surface of the mask frame (2) in a state close to the pattern mask (1), and exhausts air between the wafer W and the pattern mask (1) through the ventilation hole (6) to facilitate close contact. Make it.

(12、特許請求の範囲第1項に記載の球面摺動支承部
の球面部材で、中央部を前記負圧管路(8)に繋がる管
路(13)貫通している。
(12. A spherical member of the spherical sliding bearing according to claim 1, whose central portion passes through a pipe (13) connected to the negative pressure pipe (8).

(14)は球面部は部材で、中央部分に前記管路(13
)を大きく囲んだ摺動面シール(16)が配設されてい
る。
In (14), the spherical part is a member, and the central part is the pipe (13).
) is provided with a sliding surface seal (16) that largely surrounds the area.

−10〜 他方、側面に圧力空気入口(15)を設けて、球面受は
部材(14)と球面部材(12)との摺動面に圧力空気
を供給し、球面部材(12)を流体支持して滑らかな1
習動を可能にする。
-10~ On the other hand, a pressurized air inlet (15) is provided on the side surface, and the spherical receiver supplies pressurized air to the sliding surface between the member (14) and the spherical member (12), and provides fluid support for the spherical member (12). smooth 1
enable habits.

(17)は球面受は部材(14)の下方に配設されて前
記中間胴(7)・ ウェハフレーム(10)・吸着板(
5)等を パターンマスク(1)の面の方向の直交軸X
−Yの移動並びに回転θの駆動装置、(1日)は パタ
ーンマスク(1)に向って垂直方向Zに吸着板(5)そ
の他を移動させる装置である。
In (17), the spherical receiver is disposed below the member (14), and the intermediate cylinder (7), the wafer frame (10), and the suction plate (
5) etc. Orthogonal axis X in the direction of the surface of pattern mask (1)
-Y movement and rotation θ drive device (1st) is a device that moves the suction plate (5) and others in the vertical direction Z toward the pattern mask (1).

圧力空気入口(15)への圧力空気供給管路に圧力検出
器(図示されていない)を設けて、Z軸駆動機構(18
)によってマスクフレーム(2)とゲージ(3)とウェ
ハWとが連接して、前記球面部材(12)と球面受は部
材(14)との摺動面が、圧接させられるとこの圧力検
出器で検出できる。
A pressure detector (not shown) is provided in the pressure air supply line to the pressure air inlet (15), and the Z-axis drive mechanism (18
), the mask frame (2), the gauge (3), and the wafer W are connected, and when the sliding surfaces of the spherical member (12) and the spherical receiver are brought into pressure contact with the member (14), this pressure detector It can be detected by

パターンマスク (1)およびウェハWの面に直角なZ
方向への押し付けを停止させる。実際には前記圧力の検
出と同時にZ方向の押し付けを停止すると、押し付は動
作精度が不安定になるおそれがあるので、Z方向の駆動
系にスリップ機構を設けて、1習動面の圧力の検知信号
でタイマ装置を始動さゼ、圧接を安定化させて所期のア
ライメントギヤツブを得るために必要な、 パターンマ
スク(])とウェハWとの平行度を高い精度で実現する
Pattern mask (1) and Z perpendicular to the surface of the wafer W
Stop pushing in the direction. In reality, if the pressing in the Z direction is stopped at the same time as the pressure is detected, the accuracy of the pressing may become unstable, so a slip mechanism is provided in the drive system in the Z direction to The timer device is started by the detection signal, and the parallelism between the pattern mask ( ) and the wafer W is achieved with high precision, which is necessary to stabilize the pressure contact and obtain the desired alignment gear.

なお、上記検知信号を用いてZ方向の圧接を帰還制御さ
せても、同様の成果を得ることができるなおまた、前記
球面部材(12)と球面受は部材(14)との間に供給
する空気等の気体の外に液体を利用しても実施例と同様
な機能は得られるつぎに、所期のアライメントギャップ
を得るためには、前記ゲージの長さLとマスクフレーム
の厚みDとの和の寸法から、アライメントギャップの大
きさを差し引いた距離だけウェハWをパターンマスク(
1)へのZ方向へ移動させる。
Note that the same result can be obtained even if the pressure welding in the Z direction is feedback-controlled using the detection signal.Furthermore, the spherical member (12) and the spherical receiver are provided between the member (14). The same function as in the embodiment can be obtained even if a liquid is used in place of a gas such as air.Next, in order to obtain the desired alignment gap, the length L of the gauge and the thickness D of the mask frame must be adjusted. The pattern mask (
1) in the Z direction.

この場合、Z軸駆動機構(18)によるZ方向への駆動
はパルスモータが用いられ、パルスモータに加えられる
1パルスでZ方向の移動は1マイクロメータのピッチで
行われ、所期の移動距離が高精度で得られる。
In this case, a pulse motor is used for driving in the Z direction by the Z-axis drive mechanism (18), and movement in the Z direction is performed at a pitch of 1 micrometer with one pulse applied to the pulse motor, and the desired movement distance is can be obtained with high precision.

露光のためにパターンマスク (1)とウェハWとを密
着させる場合は、さらにアライメントギヤツブの厚みに
対応してウェハWをパターンマスク(1)向けて押し進
める。この際可撓材のウェハシール(11)がマスクフ
レーム(2)の裏面に接触し、通気孔(6)から排気さ
れて、パターンマスク (1)とウェハWとの間は負圧
に保たれているので、密着が容易であり、他方前記Z方
向の寸法もゲージ(3)の長さしとマスクフレーム(2
)の厚みDを基準にしているので、過剰にパターンマス
ク (1)にウェハWを押し付けるおそれもない。
When bringing the pattern mask (1) and wafer W into close contact for exposure, the wafer W is further pushed toward the pattern mask (1) in accordance with the thickness of the alignment gear. At this time, the flexible wafer seal (11) comes into contact with the back side of the mask frame (2), and the air is exhausted from the ventilation hole (6), maintaining negative pressure between the pattern mask (1) and the wafer W. The dimensions in the Z direction are also the same as the length of the gauge (3) and the mask frame (2).
) is used as a reference, there is no risk of excessively pressing the wafer W against the pattern mask (1).

第2図に於て、(17)は第1図と同じくX。In Figure 2, (17) is X as in Figure 1.

Y、θ駆動機構、(19)はX軸・Y軸・θ角回転駆動
用パルスモータで、 それぞれ、ねじ棒(20)と、送
りナツト (21)等を介して取り付は部(22)上の
球面部材(12)・吸着板(5)等をx、Yそれぞれの
移動、ならびに回転θをさせて、吸着板(5)に載置さ
れたウェハWの合わせマークを顕微鏡の視野に捕捉して
アライメントを行う。
The Y and θ drive mechanisms (19) are pulse motors for driving X-axis, Y-axis, and θ-angle rotation, and are attached to the parts (22) via threaded rods (20) and feed nuts (21), respectively. The upper spherical member (12), suction plate (5), etc. are moved in x and Y directions and rotated θ to capture the alignment mark of the wafer W placed on the suction plate (5) in the field of view of the microscope. and perform alignment.

(23)はそれぞれx、y、  θのセンサーで、それ
ぞれのねじ棒(20)の回転を光センサーを用いて吸着
板(5)すなわちウェハWのX、Yθの移動量をパルス
として検出し、 記憶手段(24)に送る。
(23) are x, y, and θ sensors, and the rotation of each threaded rod (20) is detected as a pulse by the amount of X and Yθ movement of the suction plate (5), that is, the wafer W, using an optical sensor. It is sent to storage means (24).

なお、1パルスに、対するX、Y軸の移動量はZ軸と同
様に1マイクロメータ、θ角に就いてもウェハWの外周
でほぼ同一長に設定しである。
Note that the amount of movement in the X and Y axes for one pulse is 1 micrometer similarly to the Z axis, and the θ angle is also set to be approximately the same length around the outer periphery of the wafer W.

(25)は操作盤、(26)はパルス発生器で操作盤(
25)の指令信号によってパルスモータ(19)にそれ
ぞれのパルスを送り、x、y、  θ駆動機構(17)
を駆動して、アライメントギャップを挟んでパターンマ
スク(1)に対内前した目的のウェハWのアライメンi
・を行う。
(25) is the operation panel, (26) is the pulse generator and the operation panel (
25) sends each pulse to the pulse motor (19), and the x, y, θ drive mechanism (17)
to align the target wafer W in front of the pattern mask (1) across the alignment gap.
·I do.

(27)はそれぞれのセンサー(23)の検出パルスを
それぞれ個別に精算する積旅回路で、これらの積算値は
その際のX、Y、  θの移動量に対応する。
(27) is an accumulation circuit that individually calculates the detection pulses of each sensor (23), and these integrated values correspond to the amounts of movement in X, Y, and θ at that time.

これらの積算値は操作盤(25)の指令によって記憶手
段(24)で記憶され、必要に応じて操作盤(25)が
読み込んで、積算値に等しい逆のパルスをパルス発生器
(26)に発生させて、ウェハフレーム(10)を作業
原点に復帰させる。
These accumulated values are stored in the storage means (24) according to commands from the operation panel (25), and read by the operation panel (25) as needed to send pulses equal to and opposite to the accumulated values to the pulse generator (26). to return the wafer frame (10) to the work origin.

プレアライメントされた多数のウェハWの焼付は作業で
、作業開始に際し第1枚目のウェハWのアラメント終了
時に前記作業原点に復帰させて、その際の記憶値はその
侭残し、第2枚目以降のウェハWのアライメントに際し
、その記憶値を繰返して操作盤(25)にセットさせる
。これによって、プレアライメントされた未処理のウェ
ハWの合わせマークが顕微鏡の視野内か、その近くにあ
って速やかにアライメント作業が行える。
The printing of a large number of pre-aligned wafers W is a work, and when the work starts, the first wafer W is returned to the work origin when the alignment of the first wafer W is completed, and the memorized values at that time are left behind, and the second wafer W is When aligning the wafer W thereafter, the stored value is repeatedly set on the operation panel (25). As a result, the alignment mark of the pre-aligned unprocessed wafer W is within or near the field of view of the microscope, and alignment work can be performed quickly.

前記記憶値は毎回のアライメントにおけるデータに更新
させ、他方プレアライメント機構をそのデータで帰還制
御し、操作の迅速化を強めること期待できる。
The stored value is updated with data for each alignment, and the pre-alignment mechanism is feedback-controlled using the data, which can be expected to speed up the operation.

(発明の効果) 1 特許請求の範囲第1項記載の発明によれば球面部材
(12)と球面部は部材(14)とによる360度方向
への傾動自在な支承と、上下両面に正確な平行度をゲー
ジシリンダーの使用と、前記支承部の空気圧を利用して
、ウェハWとゲージとマスクフレームとの連接の検知す
ることによって、ウェハWを正しく平行にパターンマス
ク(1)に対峙させて、無接触で、精度の高いアライメ
ントを可能にし、かつ各部に異常な荷重が加わる畏れの
ないフォトレジストウェハ露光装置が提供できる。
(Effects of the Invention) 1 According to the invention described in claim 1, the spherical member (12) and the spherical portion are supported by the member (14) so as to be tiltable in a 360 degree direction, and are supported accurately on both upper and lower surfaces. The parallelism is determined by using a gauge cylinder and by using the air pressure of the support section to detect the connection between the wafer W, the gauge, and the mask frame, so that the wafer W is correctly parallel to the pattern mask (1). Therefore, it is possible to provide a photoresist wafer exposure apparatus that enables highly accurate alignment without contact and is free from the risk of applying abnormal loads to various parts.

2 特i!r請求の範囲第2項記載の発明によればプレ
アライメントされたウェハWを高精度でアライメントを
行うため高倍率の顕微鏡を用いる際は、顕微鏡の視野の
制限のためにウェハWの合わせマークの捕捉が困難であ
るが、実際のアライメントのX、Y軸と回転角θとのデ
ータ記憶させて利用し、予め視野内にウェハWの合わせ
マークを捕捉して作業の簡易化されたフォトレジストウ
ェハ露光装置が提供できる。
2 Special i! According to the invention set forth in claim 2, when using a high-magnification microscope to perform highly accurate alignment of the pre-aligned wafer W, the alignment mark on the wafer W is Although it is difficult to capture a photoresist wafer, the work is simplified by storing and utilizing the actual alignment data of the X, Y axes and rotation angle θ, and capturing the alignment mark of the wafer W within the field of view in advance. Exposure equipment can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例の構成説明用断面図で一部
は破断して示しである。第2図はこの発明の一実施例の
動作説明用ブロック図である。 パターンマスク (1)  マスクフレーム(211ゲ
ージ(3)      ゲージアーム(4)吸着板(5
)     通気孔(6) 中間胴(7)     負圧管路(8)鏡胴挿入孔(9
)   ウェハフレーム(10)ウェハシール(11)
 球面部材(12)管路(13)     球面部は部
材(14)圧力空気入口(15)iM動面シール(16
)x、y、  θ駆動機構(17) Z軸駆動機構(18) パルスモータ(19)ねじ棒(
20)     送りナンド (21)取り付は部(2
2)  センサー(23)記憶手段(24)   操作
盤(25)パルス発生器(26) 積算回路(27)特
許出願人  株式会社 ディニス技研図面の浄書(内容
に変更なし) 材II¥1 42図 手続補正書動式) %式% 1、事件の表示 昭和61年 特許願 第302612
号2、発明の名称 フォトレジストウェハ露光装置 3 補正をする者 事件との関係 特許出願人 住   所  京都市南区久世大藪町425番地4、代
理人 無し 5、補正命令の日付 昭和62年 3月31日(発送日) 6、補正の対象 1、願書の「特許請求の範囲に記載された発明の数」項
2、図面 7、補正の内容 1、別紙の願書の通り
FIG. 1 is a cross-sectional view for explaining the structure of an embodiment of the present invention, with a portion broken away. FIG. 2 is a block diagram for explaining the operation of an embodiment of the present invention. Pattern mask (1) Mask frame (211 gauge (3) Gauge arm (4) Suction plate (5)
) Vent hole (6) Intermediate barrel (7) Negative pressure line (8) Lens barrel insertion hole (9
) Wafer frame (10) Wafer seal (11)
Spherical member (12) Pipe line (13) Spherical part is member (14) Pressure air inlet (15) iM moving surface seal (16)
) x, y, θ drive mechanism (17) Z-axis drive mechanism (18) Pulse motor (19) Threaded rod (
20) Feed Nand (21) Attach part (2)
2) Sensor (23) Storage means (24) Operation panel (25) Pulse generator (26) Integration circuit (27) Patent applicant Dinis Giken Co., Ltd. Engraving of drawings (no change in content) Material II ¥1 42 drawing procedure (Amendment form) % form % 1, Indication of case 1985 Patent application No. 302612
No. 2, Name of the invention Photoresist wafer exposure device 3 Relationship with the case of the person making the amendment Patent applicant address: 425-4 Kuze Oyabucho, Minami-ku, Kyoto City, No attorney 5, Date of amendment order: March 1988 31st (shipment date) 6. Subject of amendment 1, "Number of inventions stated in the scope of claims" section 2 of the application, Drawing 7, Contents of amendment 1, As per the attached application.

Claims (1)

【特許請求の範囲】 1、パターンマスクを支持するマスクフレームと、フォ
トレジストウェハを支持するウェハ台とこれら両フレー
ムの間に進退自在で、内径がフォトレジスタウェハの直
径より小で、有効利用範囲径より少なくとも大きい、中
空円筒の所定長のゲージが取り付けられたゲージアーム
とを備え、さらに前記ウェハ台の支承部に配設され、中
心を上側とした椀形状の球面摺動支承機構と、この摺動
面の間隙に圧力流体を供給する手段と、この間隙部の内
圧を検知する手段と、前記ゲージーを介して前記マスク
フレームの下面と前記ウェハ台とを圧接させる手段とを
備え、前記間隙部の内圧の検知信号により前記両フレー
ムの圧接を制御するフォトレジストウェハ露光装置。 2、特許請求の範囲第一項記載のフォトレジストウェハ
露光装置において、プレアライメントされたフォトレジ
ストウェハを前記パターンマスクと平行な面で、回転お
よび互に直交するX・Y軸に沿ってそれぞれ移動させる
X、Y、θ駆動機構と、前記パターンマスクに対応した
フォトレジストウェハの位置を検出する手段のセンサー
と、前記回転ならびに移動量を記憶する記憶手段と、こ
れらの記憶値によりフォトレジストウェハの方向と位置
との概略設定する作業原点機能電気回路とを備えたフォ
トレジストウェハ露光装置。
[Claims] 1. A mask frame that supports a pattern mask, a wafer stand that supports a photoresist wafer, and a wafer stand that supports a photoresist wafer, which can be moved back and forth between these frames, and whose inner diameter is smaller than the diameter of the photoresist wafer, and which has an effective usage range. a gauge arm to which a gauge of a predetermined length of a hollow cylinder, which is at least larger than the diameter of the hollow cylinder, is attached; means for supplying pressure fluid to the gap between the sliding surfaces; means for detecting the internal pressure in the gap; and means for bringing the lower surface of the mask frame into pressure contact with the wafer stand via the gauge; A photoresist wafer exposure apparatus that controls pressure contact between the two frames based on a detection signal of the internal pressure of the frame. 2. In the photoresist wafer exposure apparatus according to claim 1, the pre-aligned photoresist wafer is rotated and moved along mutually orthogonal X and Y axes in a plane parallel to the pattern mask. a sensor for detecting the position of the photoresist wafer corresponding to the pattern mask; a storage means for storing the rotation and movement amounts; A photoresist wafer exposure apparatus equipped with a work origin function electrical circuit for roughly setting the direction and position.
JP61302612A 1986-12-18 1986-12-18 Photoresist wafer exposure system Pending JPS63155615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61302612A JPS63155615A (en) 1986-12-18 1986-12-18 Photoresist wafer exposure system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61302612A JPS63155615A (en) 1986-12-18 1986-12-18 Photoresist wafer exposure system

Publications (1)

Publication Number Publication Date
JPS63155615A true JPS63155615A (en) 1988-06-28

Family

ID=17911078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61302612A Pending JPS63155615A (en) 1986-12-18 1986-12-18 Photoresist wafer exposure system

Country Status (1)

Country Link
JP (1) JPS63155615A (en)

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