JPS6315229A - Electrochromic element - Google Patents
Electrochromic elementInfo
- Publication number
- JPS6315229A JPS6315229A JP61158753A JP15875386A JPS6315229A JP S6315229 A JPS6315229 A JP S6315229A JP 61158753 A JP61158753 A JP 61158753A JP 15875386 A JP15875386 A JP 15875386A JP S6315229 A JPS6315229 A JP S6315229A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- electrode
- organic
- compd
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 27
- 239000010937 tungsten Substances 0.000 claims abstract description 26
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000000460 chlorine Substances 0.000 claims abstract description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- -1 carboxylic acid compound Chemical class 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 8
- 150000002894 organic compounds Chemical class 0.000 claims description 7
- 150000001728 carbonyl compounds Chemical class 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 abstract 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 238000004090 dissolution Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
- 238000004040 coloring Methods 0.000 description 12
- 230000004044 response Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- HCFUFGKORUGNGE-UHFFFAOYSA-N [Cl].[W] Chemical compound [Cl].[W] HCFUFGKORUGNGE-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 125000005594 diketone group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- 150000003658 tungsten compounds Chemical class 0.000 description 3
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 2
- PWYYHTLZMQHPLP-UHFFFAOYSA-N 1-phenylhexane-1,3,5-trione Chemical compound CC(=O)CC(=O)CC(=O)C1=CC=CC=C1 PWYYHTLZMQHPLP-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- OXTNCQMOKLOUAM-UHFFFAOYSA-N 3-Oxoglutaric acid Chemical compound OC(=O)CC(=O)CC(O)=O OXTNCQMOKLOUAM-UHFFFAOYSA-N 0.000 description 1
- MZQGJNWVOVFLLS-UHFFFAOYSA-N 3-benzoyl-1,1,1-trifluoropentane-2,4-dione Chemical compound FC(F)(F)C(=O)C(C(=O)C)C(=O)C1=CC=CC=C1 MZQGJNWVOVFLLS-UHFFFAOYSA-N 0.000 description 1
- BDCLDNALSPBWPQ-UHFFFAOYSA-M 3-oxohexanoate Chemical compound CCCC(=O)CC([O-])=O BDCLDNALSPBWPQ-UHFFFAOYSA-M 0.000 description 1
- XOXBJAGFQHAKII-UHFFFAOYSA-N 6,6-dimethylheptane-2,4-dione Chemical compound CC(=O)CC(=O)CC(C)(C)C XOXBJAGFQHAKII-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 1
- YOJTVGPQAALFSX-UHFFFAOYSA-J [W+4].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 Chemical compound [W+4].[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1.[O-]C1=CC=CC=C1 YOJTVGPQAALFSX-UHFFFAOYSA-J 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZSANYRMTSBBUCA-UHFFFAOYSA-N diethyl 3-oxopentanedioate Chemical compound CCOC(=O)CC(=O)CC(=O)OCC ZSANYRMTSBBUCA-UHFFFAOYSA-N 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003349 gelling agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002641 lithium Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- PFENPVAFZTUOOM-UHFFFAOYSA-N phenyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OC1=CC=CC=C1 PFENPVAFZTUOOM-UHFFFAOYSA-N 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は蒸着のような真空系を使用しないで酸化タング
ステン層を形成したエレクトロクロミック素子に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrochromic device in which a tungsten oxide layer is formed without using a vacuum system such as vapor deposition.
[従来の技術]
エレクトロクロミック(以下「EC」と略記)素子は、
通常、表面に酸化錫被膜若しくは酸化錫−酸化インジウ
ム(1丁0)被115!等の透明導電膜又はアルミニュ
ウム、金、銅等の金属被膜等を電極として形成したガラ
ス又はプラスチック等の基板上に酸化タングステン、酸
化モリブデン等のEC物質層を形成し、該EC物質層を
形成した電極基板ともう一枚の対向する電極基板との間
に電解質層を挿入して構成される。[Prior art] An electrochromic (hereinafter abbreviated as "EC") element is
Usually, the surface is coated with a tin oxide coating or a tin oxide-indium oxide (1-0) coating 115! An EC material layer such as tungsten oxide or molybdenum oxide is formed on a substrate such as glass or plastic on which a transparent conductive film such as or a metal coating such as aluminum, gold, copper, etc. is formed as an electrode, and the EC material layer is formed. It is constructed by inserting an electrolyte layer between an electrode substrate and another opposing electrode substrate.
EC物質としては醸化タングステンが広く用いられ、真
空蒸着法により電極基板上に膜状に形成するのが普通で
ある。しかしより深い着色を実現し、着消色サイクル寿
命をのばすためにはEC物質膜も膜厚の厚いものが要求
され、真空蒸着法で膜を形成する場合には蒸着時間を長
くしなければならず製造コストを大きくする要因となっ
ていた。Brewed tungsten is widely used as an EC material, and is usually formed in the form of a film on an electrode substrate by vacuum deposition. However, in order to achieve deeper coloring and extend the coloring/decoloring cycle life, the EC material film must be thicker, and if the film is formed by vacuum evaporation, the deposition time must be longer. This was a factor that increased manufacturing costs.
一方、タングステンの有機化合物を有機溶媒中に溶解し
た溶液を、透明電極を有するガラス基板上に塗布した後
。これを加熱し、熱分解して酸化タングステン層を形成
する方法(#+j開昭58−38379号公報)や、塩
化タングステンのアルコール溶液等の遷移金属化合物溶
液を電極基板上に塗布、乾燥させて層を形成する方法(
特開昭55−11207号公報)も報告されている。On the other hand, after applying a solution of a tungsten organic compound dissolved in an organic solvent onto a glass substrate having a transparent electrode. There is a method of heating and thermally decomposing it to form a tungsten oxide layer (#+j 1983-38379), or a method of applying a transition metal compound solution such as an alcoholic solution of tungsten chloride onto the electrode substrate and drying it. How to form layers (
JP-A-55-11207) has also been reported.
[発明の解決しようとする問題点1
以上に記゛述した従来の酸化タングステン膜の形成方法
においては、真空蒸着法によって膜厚の厚い酸化タング
ステン膜を形成するのは、生産性が悪くコスト高となり
大型のEC装置には適していなかった。膜密度の細かい
コントロールが困難であった。[Problem to be Solved by the Invention 1] In the conventional method for forming a tungsten oxide film described above, forming a thick tungsten oxide film by vacuum evaporation has poor productivity and high cost. Therefore, it was not suitable for large EC equipment. Fine control of film density was difficult.
また、真空装置を使用せずに大量生産するのに適した方
法としては前述のような方法が知られている。Furthermore, the method described above is known as a method suitable for mass production without using a vacuum device.
しかし、このようなタングステン化合物の溶液をガラス
基板上に塗布した後、これを加熱して酸化タングステン
層を形成する場合、加熱温度が重要となる。加熱温度が
低い場合、形成した酸化タングステン層は非常にポーラ
スになっており1着消色応答は速いが基板との密着性に
欠は着消色サイクル寿命が短い。However, when a tungsten compound solution is applied onto a glass substrate and then heated to form a tungsten oxide layer, the heating temperature is important. When the heating temperature is low, the formed tungsten oxide layer becomes very porous and has a fast coloring/decoloring response, but lacks adhesion to the substrate and has a short coloring/decoloring cycle life.
一方、加熱温度が高い場合、基板との密着性は良いけれ
ども酸化タングステン層が緻密になっており着消色応答
が遅くなるという欠点があった。On the other hand, when the heating temperature is high, although the adhesion to the substrate is good, the tungsten oxide layer becomes dense and the coloring/decoloring response becomes slow.
本発明は、この様な従来の酸化タングステン膜の形成方
法の欠点を解消するために為されたもので、EC装置と
して用いた場合、応答特性、多数回の着消色動作による
安定性に優れた酸化タングステン膜を形成することので
きる酸化タングステン膜の形成方法を提供することを目
的とする。The present invention was made to eliminate the drawbacks of the conventional tungsten oxide film formation method, and when used as an EC device, it has excellent response characteristics and stability due to multiple coloring and decoloring operations. It is an object of the present invention to provide a method for forming a tungsten oxide film that can form a tungsten oxide film with a tungsten oxide film.
[問題を解決するための手段]
本発明は1表面にEC物質としての酸化タングステン層
を形成した第1の電極付基板と、第2の電極付基板と電
極面が相対向するように配置し、その間の電解質を配置
してなるEC素子において、酸化タングステン層が、タ
ングステンの塩素系化合物を有機酸と反応させた後、ヒ
ドロキシ基を含有する有機溶媒と反応させてタングステ
ンの有機化合物を合成し、炭素数20以下の有機カルボ
ニル化合物または有機カルボン酸化合物を添加して、該
タングステンの有機化合物を電極上に供給して加熱する
ことにより形成されたことを特徴とするEC素子である
。[Means for solving the problem] The present invention includes a first substrate with an electrode on which a tungsten oxide layer as an EC material is formed on one surface, and a second substrate with an electrode, which are arranged so that the electrode surfaces face each other. In an EC device in which an electrolyte is arranged between the tungsten oxide layer and the tungsten oxide layer, a tungsten chlorine compound is reacted with an organic acid, and then reacted with an organic solvent containing a hydroxyl group to synthesize an organic tungsten compound. , an EC element characterized in that it is formed by adding an organic carbonyl compound or an organic carboxylic acid compound having 20 or less carbon atoms, supplying the tungsten organic compound onto an electrode, and heating the tungsten organic compound.
本発明のEC層は、タングステンに塩素系化合物を原料
として使用し、これを基板上に供給して熱分解するとい
う真空系を使用しない量産性に優れた製法を適用でき、
厚いEC層も容易に生産性よく製造でき、かつそのよう
にして形成されたEC層であってもHClやatをほと
んど含んでいないため強酸性とならなく、下地となる透
明導電膜を溶解させることがない。The EC layer of the present invention can be manufactured by using a chlorine-based compound in tungsten as a raw material, supplying it onto a substrate, and thermally decomposing it, which is excellent in mass production without using a vacuum system.
Thick EC layers can be manufactured easily and with high productivity, and even the EC layers formed in this way do not become strongly acidic because they contain almost no HCl or AT, and dissolve the underlying transparent conductive film. Never.
また、生成した酸化タングステン膜に酸が残存していな
いため、着消色に悪影響を与えなく、サイクル寿命が長
い、有機化合物の添加量により酸化タングステン膜の密
度をコントロールすることができ、応答性、耐久性に優
れたEC層が得られる。In addition, since no acid remains in the generated tungsten oxide film, it does not have a negative effect on coloring and fading, and has a long cycle life.The density of the tungsten oxide film can be controlled by the amount of organic compounds added, and the responsiveness , an EC layer with excellent durability can be obtained.
本発明は、有機カルボニル化合物、または有機カルボン
酸化合物を添加することによりタングステンと相互作用
し、加熱の際にWO3膜の緻密化を抑制することである
。有機カルボニル化合物、有機カルボン酸化合物の中で
もタングステンとの相互作用性の点から、ジケトン類、
ケトエステル類、ジカルボン酸類が好ましい、これは、
これらの分子内に存在する二つのC=0がタングステン
原子に配位して、一種の鎖体を形成するためである。The present invention is to interact with tungsten by adding an organic carbonyl compound or an organic carboxylic acid compound to suppress densification of the WO3 film during heating. Among organic carbonyl compounds and organic carboxylic acid compounds, diketones,
Preference is given to ketoesters and dicarboxylic acids, which are
This is because the two C=0 atoms present in these molecules coordinate with the tungsten atom to form a type of chain.
この具体Mとしては、アセトニルアセトン、ベンゾイル
アセチルアセトン、ベンゾイルトリフルオロアセチルア
セトン、t−ブチルアセチルアセトン等のジケトン類、
アセト酢酸メチル、アセト酢酸エチル、アセト酢酸フェ
ニル、プロピオニル酢酸メチル、アセトプロピオン酸メ
チル等のケトエステル類、アセトンジカルボン酸、アセ
トンジカルボン酸ジエチル、コハク酸ジメチル、シュウ
酸、シュウ酸ジエチル等のカルボン酸類等がある。Examples of the specific M include diketones such as acetonylacetone, benzoylacetylacetone, benzoyltrifluoroacetylacetone, and t-butylacetylacetone;
Ketoesters such as methyl acetoacetate, ethyl acetoacetate, phenyl acetoacetate, methyl propionyl acetate, methyl acetopropionate, carboxylic acids such as acetone dicarboxylic acid, diethyl acetone dicarboxylate, dimethyl succinate, oxalic acid, diethyl oxalate, etc. be.
またアルコールに対する溶解性、加熱して作製したWO
3膜の着消色特性の点から炭素数20以下が望ましい。Also, the solubility in alcohol, WO prepared by heating
3. From the viewpoint of coloring/decoloring properties of the film, the number of carbon atoms is preferably 20 or less.
炭素数が20を越えると溶解度が低く、沸点が高くなり
、焼成しても酸化タングステン膜中に残存してEC特性
を低下させる傾向があり20以下とされる。If the carbon number exceeds 20, the solubility will be low, the boiling point will be high, and even after firing, the carbon number will tend to remain in the tungsten oxide film and deteriorate the EC characteristics, so the carbon number is set to 20 or less.
上記の有機化合物において溶解性、着消色特性を妨げな
い限りにおいて、F、N、Sの原子、C−C,−NO3
基、−OH基等の官能基を含有しても使用可能である。F, N, S atoms, C-C, -NO3 as long as they do not interfere with the solubility and coloring/decoloring properties of the above organic compounds.
It can also be used even if it contains a functional group such as a group or an -OH group.
添加量はモル比でタングステンに対して0.3〜10倍
が良く、特に0.5〜B倍が良い、0.3倍以下では、
添加効果が小さく、1θ倍以上では基板との付着力が低
下するためである。The amount added is preferably 0.3 to 10 times the molar ratio of tungsten, especially 0.5 to B times, and less than 0.3 times,
This is because the effect of addition is small, and if the amount is 1θ or more, the adhesion force with the substrate decreases.
本発明では、タングステンの塩素系化合物が有機溶媒に
溶解され、これと有機酸とを反応させることにより、タ
ングステンの有機酸塩を生成させ、さらにヒドロキシ基
を含有する有機溶媒と反応させてW(OR)+、で示さ
れるタングステンアルコキシド又はタングステンフェノ
キシドであるタングステンの有機化合物を生成させ、そ
れに、炭素数20以下の有機カルボニル化合物または有
機カルボン酸化合物を添加して基板上に形成された電極
上に供給して、焼成して酸化タングステンとする。In the present invention, a chlorine-based compound of tungsten is dissolved in an organic solvent, and this is reacted with an organic acid to produce an organic acid salt of tungsten, which is further reacted with an organic solvent containing a hydroxy group to produce W( An organic compound of tungsten, which is tungsten alkoxide or tungsten phenoxide, represented by OR) It is supplied and fired to produce tungsten oxide.
このタングステンの有機化合物の電極上への供給方法と
しては、タングステンの有機化合物の溶液中に基板を浸
漬後、引き上げてコートしたり、タングステンの有機化
合物の溶液をスピンコード若しくはスプレーコートした
り、印刷したりすればよく、周知の供給方法が使用でき
る。Methods for supplying this tungsten organic compound onto the electrode include dipping the substrate in a tungsten organic compound solution and then pulling it up to coat it, spin-coating or spray coating the tungsten organic compound solution, or printing. Any well-known supply method can be used.
次いで、この供給したタングステンの有機化合物を焼成
して酸化タングステンとする。この焼成温度もタングス
テンの有機化合物が酸化タングステンになればよく、5
0℃以上350℃以下が望ましい、何故ならば、50℃
より低温では酸化タングステン膜上に結晶が出来てしま
い膜表面に模様が表われてしまうからであり、350℃
よりも高温で焼成すると酸化タングステン膜全体が結晶
性となってしまい、EC装置として利用した場合に酸化
タングステン膜が発消色しに〈〈応答時間が遅くなって
しまうからであり、通常は、100〜300℃程度でよ
い。Next, the supplied organic compound of tungsten is fired to form tungsten oxide. This firing temperature is sufficient as long as the organic compound of tungsten becomes tungsten oxide, and
Desirably 0℃ or higher and 350℃ or lower, because 50℃
This is because at lower temperatures, crystals form on the tungsten oxide film and patterns appear on the film surface.
This is because if the tungsten oxide film is fired at a higher temperature, the entire tungsten oxide film becomes crystalline, and when used as an EC device, the tungsten oxide film becomes discolored and the response time becomes slower. The temperature may be about 100 to 300°C.
本発明で使用する第1の電極付基板は、ガラス、プラス
チック等の基板上に、l11203−5nO?、5n0
2等の電極を形成し、その電極りにEC物質としての酸
化タングステン層を形成したものであり、第2の電極付
基板にはガラス、プラスチック等の基板上に対向電極を
形成したものがある。これら第1の電極付基板と第2の
電極付基板の少なくとも一方は透明基板であり、その上
に形成される電極も透明TL極とされる。また、透過型
ECDや調光窓のような透過型EC素子の場合には両方
とも透明基板とその上に形成された透明電極とされる。The first electrode-attached substrate used in the present invention is a substrate made of glass, plastic, or the like. ,5n0
A second electrode is formed, and a tungsten oxide layer as an EC material is formed on the electrode.The second electrode-attached substrate has a counter electrode formed on a glass, plastic, etc. substrate. . At least one of the first electrode-attached substrate and the second electrode-attached substrate is a transparent substrate, and the electrode formed thereon is also a transparent TL pole. Furthermore, in the case of a transmissive EC element such as a transmissive ECD or a light control window, both elements are a transparent substrate and a transparent electrode formed on the transparent substrate.
もちろん、この透明電極の一部にAI、 Ni、Ti、
Cu、Ag、Cr等の金属の低抵抗材料によるリードを
線状、網目状、格千秋等に形成しておいてもよい。Of course, a part of this transparent electrode contains AI, Ni, Ti,
Leads made of a low resistance metal such as Cu, Ag, or Cr may be formed in a linear shape, a mesh shape, a grid pattern, or the like.
また、この酸化タングステン層を形成した電極付基板の
電極はECDの場合には所望の形状のパターンにパター
ニングされて使用されればよいし、調光体の場合には通
常全面ベタ電極とされればよい。In addition, the electrode of the electrode-attached substrate on which this tungsten oxide layer is formed may be used by patterning it into a desired shape in the case of ECD, and it is usually used as a solid electrode on the entire surface in the case of light control body. Bye.
対向電極は、反射型ECDのような反射型で対向電極上
に背景板を配置するような構造のEC素子の場合には、
不透明なカーボンとEC物質の混合物、EC物質の不透
明な材料や本発明のEC物質と同様の電圧印加で着消色
する材料であってもよい、透過型EC素子では、対向電
極は、透明若しくは本発明のEC物質とは逆の電圧印加
で着消色する材料とされ、透明と着色状態とをとること
ができるようにされる。また、調光鏡のような鏡面反射
型の場合には、この透過型EC素子と鏡との組み合せで
あってもよいし、裏側の電極を鏡面反射性を有する材料
としてもよい。In the case of a reflective type EC element such as a reflective ECD with a structure in which a background plate is placed on the counter electrode, the counter electrode is
In a transmissive EC element, which may be a mixture of opaque carbon and EC material, an opaque EC material, or a material that changes color and disappears upon application of a voltage similar to the EC material of the present invention, the counter electrode is transparent or EC material. The EC material of the present invention is a material that changes color and disappears when a voltage is applied in the opposite direction, so that it can be in a transparent state or a colored state. Further, in the case of a specular reflection type such as a dimming mirror, the transmission type EC element and a mirror may be combined, or the electrode on the back side may be made of a material having specular reflection property.
このような第1の電極付基板と第2の電極付基板との間
に配置される電解質は、EC物質を着消色させうる物質
であればよく、プロピレンカーボネート、γ−ブチロラ
クトン、ブチルアルコール等の有機溶媒に、過塩素醸リ
チウム。The electrolyte disposed between the first electrode-attached substrate and the second electrode-attached substrate may be any substance capable of coloring or decolorizing the EC substance, such as propylene carbonate, γ-butyrolactone, butyl alcohol, etc. perchlorinated lithium in an organic solvent.
ヨウ化リチウム等の支持電解質、必要に応じてさらにゲ
ル化剤、色素等の各種添加剤等を混入したものが使用さ
れればよい。What is necessary is to use a supporting electrolyte such as lithium iodide, and if necessary, further mixed with various additives such as a gelling agent and a dye.
このように、第1の電極付基板と、第2の電極付基板と
をその電極面が相対向するように配置し、その間に電解
質を配置する。この場合、電解質が液体やゲルの場合に
はその周辺にシール材を設けてシールして、電解質を封
入することが好ましい、もちろん、固体電解質の場合に
おいてもシールを形成してもよい。In this way, the first substrate with electrodes and the second substrate with electrodes are arranged so that their electrode surfaces face each other, and the electrolyte is placed between them. In this case, if the electrolyte is a liquid or gel, it is preferable to provide a sealing material around the electrolyte to seal the electrolyte.Of course, a seal may also be formed in the case of a solid electrolyte.
[実施例]
原料として、 WCIbまたはWOC]aを使用し、こ
れら0.03mol をCC1a 20hQに溶解させ
、RCOOH(RはC1〜C4の炭化水素基)を0.1
8mal加え、80〜80℃で8hr還流した0次いで
ロータリーエバポレーターで溶媒を蒸発させ、イソプロ
ピルアルコール
エステル類としてアセト酢酸メチル、アセト酢酸エチル
、ジケトン類とトリフルオロアセチルアセトン、ベンゾ
イルアセチルアセトン、ジカルボン酸として,酒石酸を
添加して、これらの溶液を透明電極(ITO)上に直接
コートして200℃で焼成した酸化タングステン層の密
度を測定した。[Example] WCIb or WOC]a was used as a raw material, 0.03 mol of these was dissolved in CC1a 20hQ, and 0.1 mol of RCOOH (R is a C1 to C4 hydrocarbon group) was dissolved.
Then, the solvent was evaporated using a rotary evaporator, and methyl acetoacetate, ethyl acetoacetate, diketones, trifluoroacetylacetone, benzoylacetylacetone, and tartaric acid were added as dicarboxylic acids. These solutions were directly coated on a transparent electrode (ITO) and the density of a tungsten oxide layer was measured by baking at 200°C.
この結果,いずれの化合物を添加した酸化タングステン
層もこの化合物の添加量が増大するとともに、その密度
が低下するものであった。As a result, the density of the tungsten oxide layer to which any of the compounds was added decreased as the amount of the compound added increased.
これらの内、アセト酢酸メチル、トリフルオロアセチル
アセトン、酒石酸の例についてのタングステンに対する
添加濃度と酸化タングステン層の密度との関係を第1図
に示す。Among these, the relationship between the concentration of tungsten added and the density of the tungsten oxide layer for examples of methyl acetoacetate, trifluoroacetylacetone, and tartaric acid is shown in FIG.
また、これら溶液を透明電極(ITO)上に直接コート
し、200℃で焼成して酸化タングステン層とした第1
の電極付基板と、対向電極として透明電極( ITO)
形成した第2の電極付基板とを、その電極面が相対向す
るように配置し,周辺をエポキシ樹脂でシールすると同
時にその間に0.5M/12のLilを含むγーブチロ
ラクトンにポリビニルブチラールを混合してゲル化した
電解質を配置して、EC調光体を製造して着消色応答を
調べた.この結果、いずれの化合物を添加したEC調光
体も未添加のEC調光体に比して着色の応答はほぼ同等
であり、かつ消色の応答は大巾に速くなるものであった
.第1表は、アセト酢酸メチルを添加した系の透過率が
15%から70%にまで変化するのに要した時間を示す
。In addition, these solutions were directly coated on a transparent electrode (ITO) and baked at 200°C to form a tungsten oxide layer.
A substrate with electrodes and a transparent electrode (ITO) as the counter electrode.
The formed second electrode-attached substrate was placed so that the electrode surfaces faced each other, and the periphery was sealed with epoxy resin, and at the same time, polyvinyl butyral was mixed with γ-butyrolactone containing 0.5M/12 Lil. An EC light control body was manufactured by placing the gelled electrolyte thereon, and its coloring/decoloring response was investigated. As a result, the coloring response of the EC dimmers to which any compound was added was almost the same as that of the EC dimmers to which no compound was added, and the decoloring response was significantly faster. Table 1 shows the time required for the transmittance of the system with added methyl acetoacetate to change from 15% to 70%.
第 1 表
この第1表からもわかるように、タングステンに対して
アセト酢酸メチルを1添加した系においても応答速度は
40%向丘し、6添加した系では約175と高速になっ
た。Table 1 As can be seen from Table 1, even in the system in which one methyl acetoacetate was added to tungsten, the response speed increased by 40%, and in the system in which six methyl acetoacetates were added, the response speed increased to about 175.
[発明の効果]
本発明のEC層は、タングステンの塩素系化合物を原料
として使用し、有機カルボニル化合物及び有機カルボン
酸化合物を添加後、基板上に供給して熱分解するという
真空系を使用しない量産性に優れた製法を適用できるも
のであり、厚いEC層も容易に生産性よ〈製造でき、極
めて生産性のよいもである。[Effects of the Invention] The EC layer of the present invention uses a tungsten chlorine compound as a raw material, adds an organic carbonyl compound and an organic carboxylic acid compound, and then supplies it onto a substrate and thermally decomposes it, without using a vacuum system. It is possible to apply a manufacturing method that is excellent in mass production, and thick EC layers can be easily manufactured with high productivity, making it extremely productive.
また、タングステンの塩素系化合物を出発原料として用
い、タングステンの有機化合物を電極上に供給して加熱
して形成されたEC層であっても、HCIやCIをほと
んど含んでいないため強酸性とならなく、下地となる透
明導電膜を溶解させることがないため、下地の透明電極
の保護コートを必要としない。Furthermore, even if an EC layer is formed by using a tungsten chlorine compound as a starting material and heating an organic tungsten compound on an electrode, it will not be strongly acidic because it contains almost no HCI or CI. Since the underlying transparent conductive film is not dissolved, there is no need for a protective coating for the underlying transparent electrode.
さらに、生成した酸化タングステン膜の密度をコントロ
ールできることから応答性、耐久性に優れたEC層を形
成させることができる。Furthermore, since the density of the produced tungsten oxide film can be controlled, an EC layer with excellent responsiveness and durability can be formed.
本発明は、この外、表面に反射防止層を形成したり、印
刷層を設けたり、他の表示素子と組み合せたり、自動調
光機構を付加したり、鏡と組み合せたりする等種々の応
用が可能であり、種々のECD及びEC調光素子に使用
できる。In addition, the present invention can be applied in various ways, such as forming an antireflection layer on the surface, providing a printed layer, combining with other display elements, adding an automatic light control mechanism, and combining with a mirror. It can be used in various ECD and EC dimming devices.
第1図は、本発明の実施例の添加剤の濃度と酸化タング
ステン層の密度との関係をあられすグラフ。
a:アセト酢酸メチル
b=ニトリフルオロアセチルアセト
ン:酒石酸FIG. 1 is a graph showing the relationship between the concentration of an additive and the density of a tungsten oxide layer in an example of the present invention. a: Methyl acetoacetate b = Nitrifluoroacetylacetone: Tartaric acid
Claims (6)
ングステン層を形成した第1の電極付基板と、第2の電
極付基板とを電極面が相対向するように配置し、その間
に電解質を配置してなるエレクトロクロミック素子にお
い て、酸化タングステン層がタングステンの塩素系化合物
を有機酸と反応させた後、ヒドロキシ基を含有する有機
溶媒と反応させてタ ングステンの有機化合物を合成し、炭素数20以下の有
機カルボニル化合物または有機カルボン酸化合物を添加
して、該タングステンの有機化合物を電極上に供給して
加熱することにより形成されたことを特徴とするエレク
トロクロミック素子。(1) A first substrate with an electrode on which a tungsten oxide layer as an electrochromic substance is formed and a second substrate with an electrode are arranged so that the electrode surfaces face each other, and an electrolyte is arranged between them. In the electrochromic device, the tungsten oxide layer reacts the chlorine-based compound of tungsten with an organic acid, and then reacts it with an organic solvent containing a hydroxy group to synthesize an organic compound of tungsten. 1. An electrochromic device, characterized in that it is formed by adding a compound or an organic carboxylic acid compound, supplying the organic compound of tungsten onto an electrode, and heating it.
、脱水状態で反応させる特許請求の範囲第1項記載のエ
レクトロクロミック素子。(2) The electrochromic device according to claim 1, in which a chlorine-based compound of tungsten is dissolved in an organic solvent and reacted in a dehydrated state.
求の範囲第1項記載のエレクトロクロミック素子。(3) The electrochromic device according to claim 1, wherein the organic acid is a carboxylic acid having 1 to 4 carbon atoms.
である特許請求の範囲第1項記載のエレクトロクロミッ
ク素子。(4) The electrochromic device according to claim 1, wherein the organic solvent containing a hydroxy group is an alcohol.
請求の範囲第4項記載のエレクトロクロミック素子。(5) The electrochromic device according to claim 4, wherein the alcohol is isopropyl alcohol.
物の添加量がタングステンの濃度に対して0.3〜10
倍である特許請求の範囲第1項記載のエレクトロクロミ
ック素子。(6) The amount of organic carbonyl compound or organic carboxylic acid compound added is 0.3 to 10% relative to the concentration of tungsten.
The electrochromic device according to claim 1, which is twice as large.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61158753A JPS6315229A (en) | 1986-07-08 | 1986-07-08 | Electrochromic element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61158753A JPS6315229A (en) | 1986-07-08 | 1986-07-08 | Electrochromic element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6315229A true JPS6315229A (en) | 1988-01-22 |
Family
ID=15678584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61158753A Pending JPS6315229A (en) | 1986-07-08 | 1986-07-08 | Electrochromic element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6315229A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5025678A (en) * | 1988-09-02 | 1991-06-25 | Toyota Jidosha Kabushiki Kaisha | Column shift lever device |
-
1986
- 1986-07-08 JP JP61158753A patent/JPS6315229A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5025678A (en) * | 1988-09-02 | 1991-06-25 | Toyota Jidosha Kabushiki Kaisha | Column shift lever device |
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