JPS63152201A - High frequency current injection device - Google Patents

High frequency current injection device

Info

Publication number
JPS63152201A
JPS63152201A JP29891486A JP29891486A JPS63152201A JP S63152201 A JPS63152201 A JP S63152201A JP 29891486 A JP29891486 A JP 29891486A JP 29891486 A JP29891486 A JP 29891486A JP S63152201 A JPS63152201 A JP S63152201A
Authority
JP
Japan
Prior art keywords
high frequency
frequency current
current injection
injection tube
characteristic impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29891486A
Other languages
Japanese (ja)
Inventor
Hitoshi Tsukahara
塚原 仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP29891486A priority Critical patent/JPS63152201A/en
Publication of JPS63152201A publication Critical patent/JPS63152201A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Electric Properties And Detecting Electric Faults (AREA)

Abstract

PURPOSE:To improve the reproducing accuracy of the test of the anti- electromagnetic environment adequacy EMC of an electronic device or the like by providing a 2nd inner conductor between an outer conductor and an inner conductor, applying a high frequency to the 2nd inner conductor so as to keep the characteristic impedance of a high frequency current injection device constant depending on the characteristic impedance. CONSTITUTION:The 2nd inner conductor 51 along the axis of a high frequency current injection tube 120 is provided between the outer conductor 20 and the inner conductor 22 and a high frequency current is injected from one terminal of the 2nd inner conductor 51 by a high frequency oscillator 10. Moreover, the characteristic impedance of the high frequency current injection tube 120 is set nearly equal to the characteristic impedance of a terminator 14 and an output impedance of the high frequency oscillator 10. Thus, the reduction of the characteristic impedance of a body to be tested due to the wiring of a wire harness is suppressed and the test of the EMC (Electro Magnetic Compatibility) of an electronic device or the line to the high frequency current is conducted stably with reproducing accuracy.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電子機器等のワイヤハーネスに高周波電流
を静電結合の作用により注入する高周波電流注入装置に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a high-frequency current injection device that injects high-frequency current into a wire harness of an electronic device or the like by the action of capacitive coupling.

現在、電子機器等の高周波′42流に対する耐電磁環境
適合性(Electro Magr+etic Com
patibility。
Currently, electromagnetic environment compatibility (Electro Magr+etic Com
compatibility.

以下、  rENGJという、)の試験が広く行われて
いる。このEMCの試験においては、電子機器等のワイ
ヤハーネスに高周波電流を静電結合の作用により注入す
る高周波電流注入装置が必要である。
Hereinafter referred to as rENGJ) tests are widely conducted. This EMC test requires a high-frequency current injection device that injects high-frequency current into the wire harness of an electronic device or the like through the action of capacitive coupling.

〔従来の技術〕[Conventional technology]

従来の高周波電流注入装置としては、例えば第6図〜第
9図に示すようなものがある。第6図は従来の高周波注
入装置を用いたEMCの試験回路ブロック図、第7図は
第6図に於ける符号12で示す従来の高周波電流注入管
の一部断面図である。第8図は第7図に於けるC−C断
面図、第9図は7図に於けるD−D断面図である(特開
昭59−80003号公報記載)。
Examples of conventional high frequency current injection devices include those shown in FIGS. 6 to 9, for example. FIG. 6 is a block diagram of an EMC test circuit using a conventional high-frequency injection device, and FIG. 7 is a partial cross-sectional view of a conventional high-frequency current injection tube indicated by reference numeral 12 in FIG. FIG. 8 is a sectional view taken along line CC in FIG. 7, and FIG. 9 is a sectional view taken along line DD in FIG.

従来の高周波電流注入装置の構成を第6図に基づいて説
明すると、高周波発振器10と、該高周波発振器10に
接続され、電子機器等である被試験体16のワイヤハー
ネス18に高周波電流を静電結合の作用により注入する
高周波電流注入管12と、該高周波電流注入管12に接
続された終端器14とを有して構成している。前記高周
波電流注入管12は、第7図〜第9図に示すように管状
の外部導体20と、該外部導体20の内部の所定の位養
に固定された内部導体22とから成り。
The configuration of a conventional high frequency current injection device will be explained based on FIG. 6. The high frequency current injection device electrostatically injects a high frequency current into a high frequency oscillator 10 and a wire harness 18 of a test object 16 which is connected to the high frequency oscillator 10 and is an electronic device or the like. It comprises a high frequency current injection tube 12 that injects by the action of coupling, and a terminator 14 connected to the high frequency current injection tube 12. The high frequency current injection tube 12 consists of a tubular outer conductor 20 and an inner conductor 22 fixed at a predetermined position inside the outer conductor 20, as shown in FIGS. 7 to 9.

前記外部導体20には、ワイヤハーネス18を高周波電
流注入管12の軸に沿って外部導体20と内部導体22
どの間に設けた凹溝部22aに挿入するための挿入孔2
8.29が設けられている。
The wire harness 18 is connected to the outer conductor 20 along the axis of the high frequency current injection tube 12 to the outer conductor 20 and the inner conductor 22.
Insertion hole 2 for insertion into concave groove 22a provided between
8.29 is provided.

外部導体20は前記2つの挿入孔28.29を含む面に
沿って2つの外部導体片20a、20bに分離可能な構
造であり、前記内部導体22は、ワイヤハーネス18を
高周波電流注入管12の軸に沿って密着固定し、ワイヤ
ハーネス18を被試験体16から取り外すことなく高周
波電流注入管12の軸に沿って挿入し、ワイヤハーネス
18を介して被試験体16に高周波電流を注入する構成
と、なっている、外部導体片20aはヒンジ32によっ
て外部導体片20bに対して回動自在の構造となってい
る。外部導体20には保持錠34が設けられており、該
保持錠34により外部導体片20aと外部導体片20b
とを密着保持することができ、高周波電流注入管12外
への高周波電流の電磁的漏れを防止する構造となってい
る。24は終端器14と接続するコネクタ、26は高周
波発振器10と接続するコネクタであり、外部導体20
とは絶縁状態で固定されている。
The outer conductor 20 has a structure that can be separated into two outer conductor pieces 20a and 20b along the surface including the two insertion holes 28 and 29, and the inner conductor 22 connects the wire harness 18 to the high frequency current injection tube 12. A structure in which the wire harness 18 is tightly fixed along the axis, the wire harness 18 is inserted along the axis of the high-frequency current injection tube 12 without being removed from the test object 16, and the high-frequency current is injected into the test object 16 via the wire harness 18. The outer conductor piece 20a is configured to be rotatable relative to the outer conductor piece 20b by a hinge 32. The outer conductor 20 is provided with a holding lock 34, and the holding lock 34 allows the outer conductor piece 20a and the outer conductor piece 20b to be separated.
The structure is such that the high-frequency current can be held in close contact with the high-frequency current injection tube 12, and electromagnetic leakage of the high-frequency current to the outside of the high-frequency current injection tube 12 can be prevented. 24 is a connector connected to the terminator 14, 26 is a connector connected to the high frequency oscillator 10, and the external conductor 20
It is fixed and insulated from the

そして、高周波発振器10からの高周波電流をワイヤハ
ース18に安定に供給するため、高周波電流注入管12
は外部導体20の内径と内部導体22の外径との比で定
まる特性インピーダンスを高周波発振器10の出力イン
ピーダンス及び終端器14の特性インピーダンスに略等
しくなるように予め設定されている。
In order to stably supply the high frequency current from the high frequency oscillator 10 to the wire hearth 18, a high frequency current injection tube 12 is provided.
is set in advance so that the characteristic impedance determined by the ratio of the inner diameter of the outer conductor 20 and the outer diameter of the inner conductor 22 is approximately equal to the output impedance of the high frequency oscillator 10 and the characteristic impedance of the terminator 14.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、このような従来の高周波電流注入装置に
あっては、この高周波電流注入管の特性インピーダンス
は被試験体のワイヤハーネスを挿入することによって影
響を受け、またワイヤハーネスの直径、本数、終端抵抗
等によっても影響を受けてしまう。その結果、高周波電
流注入管の特性インピーダンス、また入出力インピーダ
ンスが変化することによって終端器側から高周波電力の
反射が発生し、高周波発振器からの高周波電流をワイヤ
ハーネスに安定に供給できなくなり、電子機器のEMC
の試験を安定に再現精度良く行なうことができないとい
う問題点があった。
However, in such conventional high-frequency current injection equipment, the characteristic impedance of the high-frequency current injection tube is affected by the insertion of the wire harness of the test object, and is also affected by the diameter, number, and terminal resistance of the wire harness. It is also affected by. As a result, the characteristic impedance of the high-frequency current injection tube and the input/output impedance change, causing reflection of high-frequency power from the terminator side, making it impossible to stably supply the high-frequency current from the high-frequency oscillator to the wire harness, and electronic equipment. EMC of
There was a problem in that the test could not be performed stably and with high reproducibility.

〔問題点を解決するための手段〕[Means for solving problems]

この発明はこのような従来の問題点に着目してなされた
もので、電子機器等のEMCの試験を安定に再現精度良
く行なうことができる高周波電流注入装置を提供するこ
とを、その目的とする。
This invention has been made in view of these conventional problems, and its purpose is to provide a high-frequency current injection device that can stably perform EMC tests on electronic equipment, etc. with high reproducibility. .

そこで本発明は、外部導体と内部導体との間に第2の内
部導体を設け、該第2の内部導体に高周波を印加し、そ
の印加レベルにより高周波M、流注入器の特性インピー
ダンスを一定に保つことによって上記問題点を解決する
こととした。
Therefore, in the present invention, a second internal conductor is provided between the external conductor and the internal conductor, a high frequency is applied to the second internal conductor, and the high frequency M and the characteristic impedance of the flow injector are kept constant depending on the applied level. We decided to solve the above problem by maintaining

〔作用〕 外部導体と内部導体との間に第2の内部導体を設け、該
第2の内部導体に高周波電流を印加し。
[Operation] A second internal conductor is provided between the external conductor and the internal conductor, and a high frequency current is applied to the second internal conductor.

その印加レベルを調整する。すると、被試験体のワイヤ
ハーネスの挿入による高周波電流注入管の特性インピー
ダンスに対する影響を抑制することができ、高周波電流
注入器の特性インピーダンスは一定に保たれる。
Adjust the application level. Then, the influence on the characteristic impedance of the high frequency current injection tube due to the insertion of the wire harness of the test object can be suppressed, and the characteristic impedance of the high frequency current injection tube is kept constant.

〔実施例〕〔Example〕

以下、この発明の一実施例を図面に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.

第1図〜第3図は、この発明の一実施例を示す図であり
、まず構成を説明する。但し、従来の構成と同一のもの
については同一番号を付してその説明を省略する。
FIGS. 1 to 3 are diagrams showing one embodiment of the present invention, and the configuration will be explained first. However, components that are the same as the conventional configuration are given the same numbers and their explanations will be omitted.

第1図はEMCの試験ブロック図であり、高周波発振3
10の出力をパワーメータ53及びアッテネータ54に
接続している。パワーメータ53は高周波電流注入管1
20の内部導体22から被試験体16のワイヤハーネス
18に供給する高周波電流及び高周波電流の反射に基づ
く定在波比を測定でき、アッテネータ54は後述する第
2の内部導体51に供給する高周波電流の印加レベルを
調整することができる。51は第2の内部導体、50は
第2の内部導体51の一端に接続した第2の終端器シ辿
であり、その詳細については後述する。
Figure 1 is an EMC test block diagram, with high frequency oscillation 3
10 outputs are connected to a power meter 53 and an attenuator 54. Power meter 53 is high frequency current injection tube 1
The high frequency current supplied from the internal conductor 22 of 20 to the wire harness 18 of the test object 16 and the standing wave ratio based on the reflection of the high frequency current can be measured. The application level of can be adjusted. 51 is a second internal conductor, and 50 is a second terminator track connected to one end of the second internal conductor 51, the details of which will be described later.

第2図、第3図で示すように、外部導体20には高周波
電流注入管120の軸にそって、高周波発振器10が出
力した高周波電流の波長に比べ充分小さな径の貫通路4
9を設けている。55.56は貫通路49の両端に設け
た挿入孔である。
As shown in FIGS. 2 and 3, the outer conductor 20 has a through-hole 4 along the axis of the high-frequency current injection tube 120, which has a diameter sufficiently smaller than the wavelength of the high-frequency current output from the high-frequency oscillator 10.
There are 9. 55 and 56 are insertion holes provided at both ends of the through passage 49.

この貫通路49に第2の内部導体51を挿通し、該第2
の内部導体51の一端は終端器50を介して外部導体2
0に接続され、挿入孔55側にはアッテネータ54に接
続するためのコネクタ52が設けられている。57は終
端器50を支持固定する支持具である。高周波電流注入
管120は終端器14側からの高周波電流の反射を抑制
するためインピーダンス整合が必要である。そのため、
高周波電流注入管120の特性インピーダンスは第2の
内部導体51を設けたうえでその特性インピーダンスを
高周波発振器10の出力インピーダンス及び終端器14
の特性インピーダンスに略等しくなるように外部導体片
20の内径と内部導体22の外径との比を所定の値に設
定している。
The second internal conductor 51 is inserted into the through-hole 49, and the second internal conductor 51 is inserted into the through-hole 49.
One end of the internal conductor 51 is connected to the external conductor 2 via the terminator 50.
0, and a connector 52 for connecting to an attenuator 54 is provided on the insertion hole 55 side. 57 is a support for supporting and fixing the terminator 50. The high frequency current injection tube 120 requires impedance matching in order to suppress reflection of high frequency current from the terminator 14 side. Therefore,
The characteristic impedance of the high frequency current injection tube 120 is determined by providing the second internal conductor 51 and combining the characteristic impedance with the output impedance of the high frequency oscillator 10 and the terminator 14.
The ratio of the inner diameter of the outer conductor piece 20 to the outer diameter of the inner conductor 22 is set to a predetermined value so that the characteristic impedance of the outer conductor piece 20 is approximately equal to the characteristic impedance.

このような構成となる高周波電流注入装置の作動をを説
明する。
The operation of the high frequency current injection device having such a configuration will be explained.

被試験体16のワイヤハーネス18を挿入孔28から凹
溝部22aを介して挿入孔29に会社−挿入した際、こ
のワイヤハーネ ス18の径が大きいほど、またその本数が多いほど高周
波注入管120の特性インピーダンスが低rし、また試
験周波数が高くなるほど特性インピーダンスの低下は顕
著となる。この特性インピーダンスの低下はパワーメー
タ53で定在波比を測定することにより検知することが
できる。そこで、特性インピーダンスの低下を検出した
場合にはアッテネータ54の減衰量を調整して、適量の
高周波電流を第2の内部導体51に対する印加レベル調
整することにより高周波電流注入管120の特性インピ
ーダンスの低下を抑制し、定在波が発生しないような値
に調整する。すると、終端器14側からの高周波電流の
反射がなく、従って安定して高周波電流をワイヤハーネ
ス18を介して被試験体16に注入することができる。
When the wire harness 18 of the test object 16 is inserted into the insertion hole 29 from the insertion hole 28 through the groove 22a, the larger the diameter of the wire harness 18 and the larger the number of wire harnesses, the higher the number of high-frequency injection tubes 120. As the characteristic impedance becomes lower and the test frequency becomes higher, the decrease in the characteristic impedance becomes more remarkable. This decrease in characteristic impedance can be detected by measuring the standing wave ratio with the power meter 53. Therefore, when a decrease in the characteristic impedance is detected, the attenuation amount of the attenuator 54 is adjusted to adjust the level of application of an appropriate amount of high frequency current to the second internal conductor 51, thereby reducing the characteristic impedance of the high frequency current injection tube 120. and adjust it to a value that prevents standing waves from occurring. Then, there is no reflection of the high frequency current from the terminator 14 side, and therefore the high frequency current can be stably injected into the test object 16 via the wire harness 18.

このようにして、ワイヤハーネス18の径、本数、挿入
位置のずれ等被試験体16による影響を押えることが可
能となり、高周波電流注入管−」− 12を用いたEMCの信頼性向上が図られる。
In this way, it is possible to suppress the influence of the test object 16, such as deviations in the diameter, number, and insertion position of the wire harness 18, and improve the reliability of EMC using the high-frequency current injection tube 12. .

第4図、第5図は本発明の他の実施例を示したものであ
る。この実施例では、第2の内部導体51をワイヤハー
ネスで構成し、被試験体16のワイヤハーネス18を布
線する凹溝部22aの通路を同様に設け、ワイヤハーネ
スで構成した第2の内部導体51を布線して第1の実施
例と同様の効果を得るようにしたちにものである。
FIGS. 4 and 5 show other embodiments of the present invention. In this embodiment, the second internal conductor 51 is configured with a wire harness, and a concave groove 22a passage for wiring the wire harness 18 of the test object 16 is similarly provided, and the second internal conductor 51 configured with the wire harness is 51 to obtain the same effect as the first embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明してきたように、この発明によれば、その構成
を外部導体と内部導体との間に第2の内部導体を設け、
該第2の内部導体に高周波電流を印加し、該印加レベル
により高周波電流住人管の特性インピーダンスを一定に
保つ構成としたため、被試験体のワイヤハーネスの布線
による特性インピーダンスの低下を抑制することができ
るから高周波電流の反射がなく安定して高周波電流を供
給でき、その結果EMCの試験を安定に再現精度良く行
なうことができる。
As explained above, according to the present invention, the configuration is such that the second internal conductor is provided between the external conductor and the internal conductor,
A high-frequency current is applied to the second internal conductor, and the characteristic impedance of the high-frequency current resident tube is kept constant depending on the applied level, so that a decrease in the characteristic impedance due to wiring of the wire harness of the test object is suppressed. Because of this, high frequency current can be stably supplied without reflection of high frequency current, and as a result, EMC tests can be performed stably and with high reproducibility.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例に於ける高周波電流注入装置
を用いたEMCの試験回路のブロック図、第2図は第1
図に於ける高周波注入管の一部断面図、第3図は第2図
に於ける高周波電流注入管のA−A断面図、第4図は本
発明の他の実施例於ける高周波電流注入装置を用いたE
MCの試験回路のブロック図、第5図は第4図のB−B
断面図、第6図は従来の高周波電流注入装置を用いたE
MCの試験回路のブロック図、第7図は第6図に於ける
高周波電流注入管の一部断面図、第8図は第7図に於け
るC−C断面図、第9図は第7図に於けるD−D断面図
である。 10・・・高周波発振器 12・・・高周波電流注入管
14・・・終端器    16・・・被試験体18・・
・ワイヤハーネス 20・・・外部導体 20a、20b・・・外部導体片 22・・・内部導体   22a・・・凹溝部28.2
9・・・挿入孔 32・・・ヒンジ34・・・保持錠 
   49・・・貫通路50・・・第2の終端器 51
・・・第2の内部導体52・・・コネクタ   53・
・・パワーメータ54・・・アー、テネータ 55.5
6・・・挿入孔57・・・支持具 120・・・高周波電流注入管 特許出願人   日産自動車株式会社 代 理 人   弁理士 土 橋 皓パ第 6 図 笛 7 閏
FIG. 1 is a block diagram of an EMC test circuit using a high-frequency current injection device in one embodiment of the present invention, and FIG.
3 is a partial cross-sectional view of the high-frequency current injection tube in FIG. 2, FIG. 4 is a cross-sectional view taken along line AA of the high-frequency current injection tube in FIG. 2, and FIG. 4 is a high-frequency current injection tube in another embodiment of the present invention. E using the device
A block diagram of the MC test circuit, Figure 5 is B-B in Figure 4.
The cross-sectional view, Figure 6, shows an E using a conventional high-frequency current injection device.
A block diagram of the MC test circuit, FIG. 7 is a partial sectional view of the high frequency current injection tube in FIG. 6, FIG. 8 is a CC sectional view in FIG. 7, and FIG. It is a DD sectional view in the figure. 10... High frequency oscillator 12... High frequency current injection tube 14... Termination device 16... Test object 18...
・Wire harness 20...Outer conductor 20a, 20b...Outer conductor piece 22...Inner conductor 22a...Concave groove portion 28.2
9...Insertion hole 32...Hinge 34...Retaining lock
49... Penetration path 50... Second terminator 51
...Second internal conductor 52...Connector 53.
...Power meter 54...ah, tenator 55.5
6...Insertion hole 57...Support 120...High frequency current injection tube Patent applicant Nissan Motor Co., Ltd. Representative Patent attorney Tsuchihashi Hiropa No. 6 Figure whistle 7 Leap

Claims (2)

【特許請求の範囲】[Claims] (1)高周波発振器(10)と、該高周波発振器(10
)に接続され被試験体(16)のワイヤハーネス(18
)に高周波電流を注入する高周波電流注入管(120)
と、該高周波電流注入管(120)に接続される終端器
(14)とを有し、前記高周波電流注入管(120)は
外部導体(20)と、該外部導体(20)の内部の所定
の位置に固定された内部導体(22)とから成り、前記
外部導体(20)にはワイヤハーネス(18)を高周波
電流注入管(120)の軸に沿って外部導体(20)と
内部導体(22)との間に挿入するための挿入孔が設け
られている高周波電流注入装置において、 外部導体(20)と内部導体(22)との間に高周波電
流注入管(120)の軸に沿った第2の内部導体(51
)を設け、該第2の内部導体(51)の一端から前記高
周波発振器(10)により高周波電流を注入するように
したことを特徴とする高周波電流注入装置。
(1) A high frequency oscillator (10) and a high frequency oscillator (10).
) is connected to the wire harness (18) of the test object (16).
) High-frequency current injection tube (120) for injecting high-frequency current into
and a terminator (14) connected to the high frequency current injection tube (120), and the high frequency current injection tube (120) has an outer conductor (20) and a predetermined terminal inside the outer conductor (20). The wire harness (18) is connected to the outer conductor (20) along the axis of the high frequency current injection tube (120) and the inner conductor (22) is fixed at the position of the outer conductor (20). 22), in which a high frequency current injection device is provided with an insertion hole for insertion between the outer conductor (20) and the inner conductor (22), along the axis of the high frequency current injection tube (120). Second internal conductor (51
), and a high frequency current is injected from one end of the second internal conductor (51) by the high frequency oscillator (10).
(2)第2の内部導体(51)を設けたうえで高周波電
流注入管(120)の特性インピーダンスを高周波発振
器(10)の出力インピーダンス及び終端器(14)の
特性インピーダンスに略等しく設定したことを特徴とす
る特許請求の範囲第1項記載の高周波電流注入装置。
(2) After providing the second internal conductor (51), the characteristic impedance of the high frequency current injection tube (120) is set to be approximately equal to the output impedance of the high frequency oscillator (10) and the characteristic impedance of the terminator (14). A high frequency current injection device according to claim 1, characterized in that:
JP29891486A 1986-12-17 1986-12-17 High frequency current injection device Pending JPS63152201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29891486A JPS63152201A (en) 1986-12-17 1986-12-17 High frequency current injection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29891486A JPS63152201A (en) 1986-12-17 1986-12-17 High frequency current injection device

Publications (1)

Publication Number Publication Date
JPS63152201A true JPS63152201A (en) 1988-06-24

Family

ID=17865808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29891486A Pending JPS63152201A (en) 1986-12-17 1986-12-17 High frequency current injection device

Country Status (1)

Country Link
JP (1) JPS63152201A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102426310A (en) * 2011-10-09 2012-04-25 中国航空无线电电子研究所 Novel full aircraft high-strength irradiation test method
CN103616595A (en) * 2013-11-29 2014-03-05 中国航空无线电电子研究所 Backflow channel arrangement method in airplane surface current injection test

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102426310A (en) * 2011-10-09 2012-04-25 中国航空无线电电子研究所 Novel full aircraft high-strength irradiation test method
CN103616595A (en) * 2013-11-29 2014-03-05 中国航空无线电电子研究所 Backflow channel arrangement method in airplane surface current injection test
CN103616595B (en) * 2013-11-29 2015-12-02 中国航空无线电电子研究所 Return flow line method to set up in a kind of aircraft surfaces pulse current injectingt test

Similar Documents

Publication Publication Date Title
US7170365B2 (en) Ultrafast sampler with non-parallel shockline
EP0985154B1 (en) Broadband impedance matching probe
US7259577B2 (en) Shielded probe apparatus for probing semiconductor wafer
US6768328B2 (en) Single point probe structure and method
US7612628B2 (en) Ultrafast sampler with coaxial transition
US5823790A (en) Connector for attaching a cable to a printed circuit board
JP2001066324A (en) Probe tip terminating device for providing easily alternable through type terminator
JPH1038914A (en) Connecting device of apparatus to test lead
JPWO2020111076A1 (en) Probe unit
JP4575593B2 (en) Coaxial probe interface for automatic tester
JPS63152201A (en) High frequency current injection device
US4716364A (en) Monitoring transients in low inductance circuits
US4984990A (en) Connection plug for a microwave unit
US9335364B2 (en) SMU RF transistor stability arrangement
JPS5856436B2 (en) Test equipment for integrated circuit devices
Bluhm et al. Measurements of transfer impedance with the line injection method on cables and connectors
JPH05218780A (en) Probe attenuator
KR100238445B1 (en) E-field and h-field generation system with 8p-vwig
JP3333725B2 (en) Partial discharge measurement method
US4087767A (en) L-type matching pad for coaxial lines
SU1571521A1 (en) Triaxial line for measuring coupling impedance of medium-size coaxial cables
Bickley Measurement of transistor characteristic frequencies in the 20–1000 Mc/s range
JPH06203924A (en) Community receiving apparatus
JPH04177902A (en) Electromagnetic field probe
JPS6347361B2 (en)