JPS6314863A - Vacuum device - Google Patents

Vacuum device

Info

Publication number
JPS6314863A
JPS6314863A JP61157556A JP15755686A JPS6314863A JP S6314863 A JPS6314863 A JP S6314863A JP 61157556 A JP61157556 A JP 61157556A JP 15755686 A JP15755686 A JP 15755686A JP S6314863 A JPS6314863 A JP S6314863A
Authority
JP
Japan
Prior art keywords
electrode
power source
vacuum chamber
cut filter
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61157556A
Other languages
Japanese (ja)
Inventor
Minoru Omoto
大本 稔
Takashi Ito
孝 伊東
Yoshio Suzuki
義雄 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINKU KIKAI KOGYO KK
Original Assignee
SHINKU KIKAI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINKU KIKAI KOGYO KK filed Critical SHINKU KIKAI KOGYO KK
Priority to JP61157556A priority Critical patent/JPS6314863A/en
Publication of JPS6314863A publication Critical patent/JPS6314863A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the influence of a high-frequency component from plasma and to stably execute the generation of a flow discharge, acceleration of electrons and ions, etc., by interposing a high-frequency cut filter between the output part of a DC power source and electrode. CONSTITUTION:The sputtering electrode 33 and substrate holder 35 are provided to a vacuum chamber 31 of a bias sputtering device using a DC power source for biasing the substrate and a voltage is impressed to the substrate holder 36 through the high-frequency cut filter from the DC power source 11 for biasing. The noise of the high-frequency component from the plasma is cut by the high-frequency cut filter 13 here again, by which the bias is stably applied to the electrode 35 to accelerate the ions.

Description

【発明の詳細な説明】 援亙立災 本発明は、直流電源、を備えた真空装置しこ関する。[Detailed description of the invention] relief disaster The present invention relates to a vacuum device equipped with a DC power source.

従】け1髄 真空装置内でプラズマを発生させたり、電子やイオンを
加速させるために直流電源が用t1られている。たとえ
ば、直流スパッタリング装置では、真空室にスパッタ電
極を設け、このスノ(ツタ電極に直流電圧を印加してグ
ロー放電を発生させている。しかし、種々の原因でグロ
ー放電から急にアーク放電に移行することがある。
A DC power source is used to generate plasma and accelerate electrons and ions in a vacuum device. For example, in DC sputtering equipment, a sputtering electrode is installed in a vacuum chamber, and a DC voltage is applied to the sputtering electrode to generate glow discharge. However, due to various reasons, glow discharge suddenly shifts to arc discharge. There are things to do.

この原因の1つとしては、電極上に小さなゴミが落ち、
熱電子放出作用により電流がその点に集中してアーク放
電に移行することが考えられる。また、局部的なガス放
出や電極表面の酸化などによってもアーク放電に移行す
ると考えられる。
One of the reasons for this is that small particles fall on the electrode.
It is conceivable that the current is concentrated at that point due to thermionic emission and transitions to arc discharge. It is also thought that localized gas release or oxidation of the electrode surface may cause the transition to arc discharge.

アーク放電に移行すると、大電流が流れて直流電源装置
を損傷することから、直流電源の出力側でアーク放電に
移行したことを検出し、出力を瞬時に遮断するよう対策
が取られている。
If arc discharge occurs, a large current will flow and damage the DC power supply, so measures are taken to detect the transition to arc discharge on the output side of the DC power supply and instantly shut off the output.

しかし、使用するターゲットやスパッタ条件によっては
出力の遮断が頻繁に起き、薄膜形成の上で問題が大きか
った。たとえば、AIなどの表面酸化しやすいターゲッ
トを用いる場合や、IT○、SnO,などの比較的比抵
抗が大きな酸化物ターゲットを用い酸素ガスを導入して
スパッタする場合は、出力遮断が@繁におき、成膜に著
しい障害となっていた。
However, depending on the target used and the sputtering conditions, the output was often interrupted, which caused serious problems in thin film formation. For example, when using a target whose surface is easily oxidized such as AI, or when sputtering by introducing oxygen gas using an oxide target with relatively high resistivity such as IT○, SnO, etc., the output may be cut off. This caused a significant hindrance to film formation.

また、バイアススパッタリングにおけるバイアス用直流
電源、二極スパッタや電子ビーム蒸着源における熱電子
加速用直流電源においても。
It can also be used as a DC power source for bias in bias sputtering, or as a DC power source for hot electron acceleration in bipolar sputtering or electron beam evaporation sources.

電圧が不安定になりやすく、真空薄膜製造装置の自動化
などの点で問題となっていた。
The voltage tends to become unstable, which has been a problem in terms of automation of vacuum thin film manufacturing equipment.

l匪立且孜 本発明は、直流電源により安定したグロー放電を発生さ
せたり、安定した電子やイオンを加速させることが可能
な真空装置に関する。
The present invention relates to a vacuum device capable of generating stable glow discharge and stably accelerating electrons and ions using a DC power source.

見匪立孟氏 本発明の真空装置は、放電によりプラズマが発生する真
空室と、該真空室内に設けられ該真空室内に電界を形成
する電極と、該電極に直流電圧を印加する直流電源とを
備えた真空装置において、前記直流電源の出力部と前記
電極との間に高周波カットフィルタを介在せしめたこと
を特徴とする。
The vacuum apparatus of the present invention includes a vacuum chamber in which plasma is generated by electric discharge, an electrode provided in the vacuum chamber to form an electric field in the vacuum chamber, and a DC power supply that applies a DC voltage to the electrode. The vacuum apparatus is characterized in that a high frequency cut filter is interposed between the output part of the DC power source and the electrode.

以下、添付図面に沿って本発明をさらに詳細に説明する
Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

第1図は、本発明を直流スパッタ装置に応用した場合の
実施例を示すブロック図であり、真空室21と直流電源
11との間に高周波カットフィルタ13が挿入されてい
る。交流電力が電源スィッチから導入され、SCR位相
制御回路、電源変圧器を経て、整流回路、フィルタ回路
により直流とされ、直流スパッタ装置の真空室2】に設
けられたスパッタ電極23に印加される。出力検出回路
は、出力電圧を検出し、これと基準電圧とを比較して設
定値を越えた電圧が変動した場合に、SCRゲート駆動
回路を作動せしめて出力を遮断するようになっている。
FIG. 1 is a block diagram showing an embodiment in which the present invention is applied to a DC sputtering apparatus, in which a high frequency cut filter 13 is inserted between a vacuum chamber 21 and a DC power supply 11. AC power is introduced from a power switch, passes through an SCR phase control circuit and a power transformer, is converted into DC by a rectifier circuit and a filter circuit, and is applied to a sputtering electrode 23 provided in a vacuum chamber 2 of the DC sputtering apparatus. The output detection circuit detects the output voltage, compares it with a reference voltage, and when the voltage fluctuates beyond a set value, activates the SCR gate drive circuit to cut off the output.

アーク放電に移行すると上記の安全回路が働いて出力が
遮断されるわけであるが、本発明者の検討によれば、ア
ーク放電に移行する以前に出力側の遮断が働いてルまう
ことか判った。この原因について鋭意検討したところ、
放電負荷による高周波成分の雑音の影響で電源側の電子
回路が誤動作を起こし、アーク放電が発生していないに
もかかわらず、あたかも発生したかのように検出してし
まい、出力側の遮断が働いてしまうことが判明した。
When a transition to arc discharge occurs, the above-mentioned safety circuit operates and the output is cut off, but according to the study conducted by the present inventor, it has been determined that the output side shutoff is activated before the transition to arc discharge occurs. Ta. After careful consideration of the cause, we found that
The electronic circuit on the power supply side malfunctions due to the high-frequency component noise caused by the discharge load, and it detects arc discharge as if it had occurred even though it has not occurred, causing the output side to shut off. It turned out that it was.

本発明の真空装置では、高周波フィルタ13が介在する
ため、放電負荷(プラズマ)による高周波成分がカット
されて上記の誤動作が防止され、安定にスパッタリング
を行なうことができる。
In the vacuum apparatus of the present invention, since the high frequency filter 13 is provided, the high frequency component due to the discharge load (plasma) is cut, the above-mentioned malfunction is prevented, and sputtering can be performed stably.

特に、Aflのように表面酸化を受けやすいターゲット
や比較的比抵抗の高い酸化物ターゲット(ITO1Sn
02など)は、放電負荷が不安定になりやすく、上記の
高周波成分の影響も大きく自動制御によるスパッタリン
グが困難であったが、本発明の真空装置によれば、この
ようなターゲットを用いた場合も大きな電力でスパッタ
することが可能となった。
In particular, targets that are susceptible to surface oxidation such as Afl and oxide targets with relatively high resistivity (ITO1Sn
02, etc.), the discharge load tends to be unstable, and the influence of the above-mentioned high frequency components is large, making sputtering by automatic control difficult. However, according to the vacuum apparatus of the present invention, when using such a target, It has also become possible to perform sputtering with high power.

なお、第1図では高周波カットフィルタ13としてπ型
のものを示したが、T型などその他の形式のものでもよ
い。また、高周波カットフィルタをアース側に挿入する
こともできる。
Although a π type filter is shown as the high frequency cut filter 13 in FIG. 1, other types such as a T type filter may be used. Furthermore, a high frequency cut filter can also be inserted on the ground side.

このようなプラズマからの悪影響は、真空室内でプラズ
マが発生する他の真空装置でも同様である。
Such adverse effects from plasma are similar to other vacuum devices in which plasma is generated within a vacuum chamber.

第2図は、基板のバイアス用に直流電源を用いたバイア
ススパッタリング装置(真空装置)に応用した実施例を
示す図である。真空室31にはスパッタ電極33および
基板ホルダー35が設けられており、バイアス用の直流
電源11から高周波カットフィルタ13を介して基板ホ
ルダー35に電圧が印加されている。ここでもプラズマ
からの高周波成分のノイズが高周波カットフィルタ13
によりカットされ、安定してバイアスを電極(基板ホル
ダー35)にかけてイオンを加速させることができる。
FIG. 2 is a diagram showing an embodiment in which the present invention is applied to a bias sputtering apparatus (vacuum apparatus) using a DC power source for biasing a substrate. A sputter electrode 33 and a substrate holder 35 are provided in the vacuum chamber 31, and a voltage is applied to the substrate holder 35 from a bias DC power source 11 via a high frequency cut filter 13. Here too, the high frequency component noise from the plasma is filtered through the high frequency cut filter 13.
By applying a stable bias to the electrode (substrate holder 35), the ions can be accelerated.

第3図は、二極スパッタリングにおける熱電子加速用電
源として直流電源を用いた実施例を示す構成図である。
FIG. 3 is a configuration diagram showing an embodiment in which a DC power source is used as a power source for accelerating thermionic electrons in bipolar sputtering.

真空室41にはターゲット電極43、熱陰極45、陽極
47が配設されている。熱電子加速用の直流電源11が
高周波カットフィルタ13を介して真空室41内の電極
(陽極47)に印加されており、この電界により電子が
加速される。
A target electrode 43, a hot cathode 45, and an anode 47 are arranged in the vacuum chamber 41. A DC power source 11 for accelerating thermionic electrons is applied to an electrode (anode 47) in the vacuum chamber 41 via a high frequency cut filter 13, and electrons are accelerated by this electric field.

第4図は電子ビーム蒸着源における熱電子加速用に直流
電源を用いた実施例を示す構成図である。真空室51内
に設置された電子ビーム蒸着源50に、高周波カットフ
ィルタ13を介して直流電源11が接続されている。熱
陰極53から生じた電子は、この電界により加速されて
陽極55(電極)に到達する。
FIG. 4 is a configuration diagram showing an embodiment in which a DC power source is used for accelerating thermionic electrons in an electron beam evaporation source. A DC power source 11 is connected to an electron beam evaporation source 50 installed in a vacuum chamber 51 via a high frequency cut filter 13 . Electrons generated from the hot cathode 53 are accelerated by this electric field and reach the anode 55 (electrode).

衾匪五処米 本発明によれば、真空室内でプラスが生成する真空装置
に、グロー放電の発生や、電子、イオンの加速のために
直流電源を接続するに際し。
According to the present invention, when a DC power source is connected to a vacuum device in which positive energy is generated in a vacuum chamber in order to generate glow discharge or accelerate electrons and ions.

真空装置と直流電源の間に高周波カットフィルタを挿入
することにより、プラズマからの高周波成分の影響を防
止して、グロー放電の発生や電子、イオンの加速等を安
定して行なうことができる。
By inserting a high frequency cut filter between the vacuum device and the DC power supply, the influence of high frequency components from the plasma can be prevented, and the generation of glow discharge and the acceleration of electrons and ions can be performed stably.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の実施例を示すブロック図である。 第2図、第3図および第4図は本発明の他の実施例を示
す構成図である。 11・・・直流電源 13・・・高周波カットフィルタ
21.31.41.51・・・真空槽 23・・・スパッタ電極
FIG. 1 is a block diagram showing an embodiment of the present invention. FIGS. 2, 3, and 4 are configuration diagrams showing other embodiments of the present invention. 11...DC power supply 13...High frequency cut filter 21.31.41.51...Vacuum chamber 23...Sputter electrode

Claims (1)

【特許請求の範囲】[Claims] 1、放電によりプラズマが発生する真空室と、該真空室
内に設けられ該真空室内に電界を形成する電極と、該電
極に直流電圧を印加する直流電源とを備えた真空装置に
おいて、前記直流電源の出力部と前記電極との間に高周
波カットフィルタを介在せしめたことを特徴とする真空
装置。
1. In a vacuum apparatus comprising a vacuum chamber in which plasma is generated by electric discharge, an electrode provided in the vacuum chamber to form an electric field in the vacuum chamber, and a DC power source that applies a DC voltage to the electrode, the DC power source A vacuum device characterized in that a high frequency cut filter is interposed between the output section and the electrode.
JP61157556A 1986-07-04 1986-07-04 Vacuum device Pending JPS6314863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61157556A JPS6314863A (en) 1986-07-04 1986-07-04 Vacuum device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61157556A JPS6314863A (en) 1986-07-04 1986-07-04 Vacuum device

Publications (1)

Publication Number Publication Date
JPS6314863A true JPS6314863A (en) 1988-01-22

Family

ID=15652263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61157556A Pending JPS6314863A (en) 1986-07-04 1986-07-04 Vacuum device

Country Status (1)

Country Link
JP (1) JPS6314863A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302882A (en) * 1991-09-09 1994-04-12 Sematech, Inc. Low pass filter for plasma discharge
US6729286B2 (en) 2001-10-02 2004-05-04 Mitsubishi Denki Kabushiki Kaisha Fuel supply apparatus for engine

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130665A (en) * 1984-07-20 1986-02-12 Anelva Corp Sputtering device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130665A (en) * 1984-07-20 1986-02-12 Anelva Corp Sputtering device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302882A (en) * 1991-09-09 1994-04-12 Sematech, Inc. Low pass filter for plasma discharge
US6729286B2 (en) 2001-10-02 2004-05-04 Mitsubishi Denki Kabushiki Kaisha Fuel supply apparatus for engine

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