JPS63148627A - Method of lithographing by electron beam lithography equipment - Google Patents

Method of lithographing by electron beam lithography equipment

Info

Publication number
JPS63148627A
JPS63148627A JP29486286A JP29486286A JPS63148627A JP S63148627 A JPS63148627 A JP S63148627A JP 29486286 A JP29486286 A JP 29486286A JP 29486286 A JP29486286 A JP 29486286A JP S63148627 A JPS63148627 A JP S63148627A
Authority
JP
Japan
Prior art keywords
lithography
regions
region
electron beam
utilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29486286A
Other languages
Japanese (ja)
Inventor
Kazumitsu Nakamura
Hideyuki Kakiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP29486286A priority Critical patent/JPS63148627A/en
Publication of JPS63148627A publication Critical patent/JPS63148627A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the time for detecting marks and improve the lithography speed by a method wherein a mark provided on the boundary between adjacent regions is utilized in common for the adjacent regions.
CONSTITUTION: An electron beam 2 is shaped so as to have a required form and a current density and applied to the surface of a solid object 8 to lithograph on the surface of the solid object 8. At that time, the surface of the solid object 8 is divided into a plurality of regions and alignment marks 16 for position detection are provided corresponding to the divided regions and one alignment mark 16 is utilized in common for the adjacent regions for lithography. When the lithography of one region is finished, the alignment mark 16 on the boundary between the finished region and an adjacent region is detected and the coordinates of the alignment mark 16 are stored and again utilized for the region on which lithography is to be performed next. With this constitution, the number of the alignment marks 16 to be detected corresponding to the respective regions can be reduced so that the lithography speed can be improved.
COPYRIGHT: (C)1988,JPO&Japio
JP29486286A 1986-12-12 1986-12-12 Method of lithographing by electron beam lithography equipment Pending JPS63148627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29486286A JPS63148627A (en) 1986-12-12 1986-12-12 Method of lithographing by electron beam lithography equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29486286A JPS63148627A (en) 1986-12-12 1986-12-12 Method of lithographing by electron beam lithography equipment

Publications (1)

Publication Number Publication Date
JPS63148627A true JPS63148627A (en) 1988-06-21

Family

ID=17813215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29486286A Pending JPS63148627A (en) 1986-12-12 1986-12-12 Method of lithographing by electron beam lithography equipment

Country Status (1)

Country Link
JP (1) JPS63148627A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427459B2 (en) 2006-06-23 2008-09-23 Industrial Technology Research Institute Recticle pattern applied to mix-and-match lithography process and alignment method of thereof
CN102681330A (en) * 2011-03-16 2012-09-19 南亚科技股份有限公司 Photomask and method for forming overlay mark using the same and precision improvement method for counterpoint of secondary pattern technology
TWI512051B (en) * 2010-01-15 2015-12-11 Fujifilm Corp Process for producing azo compounds, process for producing ink for inkjet recording, process for producing coloring composition for color filter, and process for producing color filter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566438A (en) * 1979-06-27 1981-01-23 Fujitsu Ltd Electron beam exposure
JPS5612730A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Electron beam exposure
JPS57204127A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Drawing method for pattern of electron-ray drawing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566438A (en) * 1979-06-27 1981-01-23 Fujitsu Ltd Electron beam exposure
JPS5612730A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Electron beam exposure
JPS57204127A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Drawing method for pattern of electron-ray drawing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427459B2 (en) 2006-06-23 2008-09-23 Industrial Technology Research Institute Recticle pattern applied to mix-and-match lithography process and alignment method of thereof
TWI512051B (en) * 2010-01-15 2015-12-11 Fujifilm Corp Process for producing azo compounds, process for producing ink for inkjet recording, process for producing coloring composition for color filter, and process for producing color filter
CN102681330A (en) * 2011-03-16 2012-09-19 南亚科技股份有限公司 Photomask and method for forming overlay mark using the same and precision improvement method for counterpoint of secondary pattern technology
US8535858B2 (en) 2011-03-16 2013-09-17 Nanya Technology Corp. Photomask and method for forming overlay mark using the same

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