JPS63146482A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS63146482A JPS63146482A JP62295401A JP29540187A JPS63146482A JP S63146482 A JPS63146482 A JP S63146482A JP 62295401 A JP62295401 A JP 62295401A JP 29540187 A JP29540187 A JP 29540187A JP S63146482 A JPS63146482 A JP S63146482A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- superlattice
- disordered
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 230000004888 barrier function Effects 0.000 claims description 18
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- -1 silicon ions Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62295401A JPS63146482A (ja) | 1987-11-25 | 1987-11-25 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62295401A JPS63146482A (ja) | 1987-11-25 | 1987-11-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63146482A true JPS63146482A (ja) | 1988-06-18 |
| JPS6352480B2 JPS6352480B2 (enrdf_load_stackoverflow) | 1988-10-19 |
Family
ID=17820133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62295401A Granted JPS63146482A (ja) | 1987-11-25 | 1987-11-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63146482A (enrdf_load_stackoverflow) |
-
1987
- 1987-11-25 JP JP62295401A patent/JPS63146482A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6352480B2 (enrdf_load_stackoverflow) | 1988-10-19 |
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