JPS63142807U - - Google Patents
Info
- Publication number
- JPS63142807U JPS63142807U JP3496087U JP3496087U JPS63142807U JP S63142807 U JPS63142807 U JP S63142807U JP 3496087 U JP3496087 U JP 3496087U JP 3496087 U JP3496087 U JP 3496087U JP S63142807 U JPS63142807 U JP S63142807U
- Authority
- JP
- Japan
- Prior art keywords
- pulse transformer
- coil
- shield
- double
- printed board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Coils Or Transformers For Communication (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3496087U JPS63142807U (en, 2012) | 1987-03-10 | 1987-03-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3496087U JPS63142807U (en, 2012) | 1987-03-10 | 1987-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63142807U true JPS63142807U (en, 2012) | 1988-09-20 |
Family
ID=30844006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3496087U Pending JPS63142807U (en, 2012) | 1987-03-10 | 1987-03-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142807U (en, 2012) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6872605B2 (en) | 1992-12-04 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6964890B1 (en) | 1992-03-17 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6979605B2 (en) | 2001-11-30 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light |
| US6987283B2 (en) | 1993-03-12 | 2006-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device structure |
| US7050878B2 (en) | 2001-11-22 | 2006-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductror fabricating apparatus |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| US7214573B2 (en) | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| US7622335B2 (en) | 1992-12-04 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor device |
-
1987
- 1987-03-10 JP JP3496087U patent/JPS63142807U/ja active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6964890B1 (en) | 1992-03-17 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7564057B1 (en) | 1992-03-17 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an aluminum nitride film |
| US7622335B2 (en) | 1992-12-04 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor device |
| US6872605B2 (en) | 1992-12-04 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6987283B2 (en) | 1993-03-12 | 2006-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device structure |
| US7391051B2 (en) | 1993-03-12 | 2008-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
| US7238558B2 (en) | 1993-06-30 | 2007-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US7439115B2 (en) | 2001-11-22 | 2008-10-21 | Semiconductor Eneregy Laboratory Co., Ltd. | Semiconductor fabricating apparatus |
| US7050878B2 (en) | 2001-11-22 | 2006-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductror fabricating apparatus |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| US7510920B2 (en) | 2001-11-30 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film |
| US7588974B2 (en) | 2001-11-30 | 2009-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| US6979605B2 (en) | 2001-11-30 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light |
| US7214573B2 (en) | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| US7560397B2 (en) | 2001-12-11 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |