JPS63142302A - Optical thin film having high resistance to laser light - Google Patents
Optical thin film having high resistance to laser lightInfo
- Publication number
- JPS63142302A JPS63142302A JP61289697A JP28969786A JPS63142302A JP S63142302 A JPS63142302 A JP S63142302A JP 61289697 A JP61289697 A JP 61289697A JP 28969786 A JP28969786 A JP 28969786A JP S63142302 A JPS63142302 A JP S63142302A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- refractive index
- optical thin
- high refractive
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 230000003287 optical effect Effects 0.000 title claims abstract description 24
- XRADHEAKQRNYQQ-UHFFFAOYSA-K trifluoroneodymium Chemical compound F[Nd](F)F XRADHEAKQRNYQQ-UHFFFAOYSA-K 0.000 claims abstract description 8
- 239000000470 constituent Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光強度が１．３ Ｊ／ｃｊ以上の高強度遠紫
外レーザー光が入射する光学薄膜例えば反射防止膜に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical thin film, such as an antireflection film, into which a high-intensity far-ultraviolet laser beam having a light intensity of 1.3 J/cj or more is incident.
光学薄膜例えば反射防止膜、干渉フィルタ、干渉ミラー
は、光学理論に基づき、４分のλ。（λ。Based on optical theory, optical thin films such as anti-reflection films, interference filters, and interference mirrors have a wavelength of λ of 4. (λ.
＝基準波長）程度の光学的膜厚を有する薄膜を単層又は
多層に積層したもので、多層膜の場合には高屈折率薄膜
と低屈折率″Ｆ！！ＦＪと場合により中屈折率薄膜とを
交互に積層したものである。そして、高屈折率薄膜の構
成物質としては、例えば＾ｈ（ｈ。It is a single-layer or multi-layer stack of thin films with an optical thickness of approximately 300 mm (= reference wavelength), and in the case of a multi-layer film, it consists of a high refractive index thin film, a low refractive index "F!!FJ", and in some cases a medium refractive index thin film. The constituent material of the high refractive index thin film is, for example, ^h (h.
ＹｚＯｘ、 ５ＣｚＱ２． ＮｄＦｓ、 Ｔｈ０２．
Ｚｒ０ｚ、ｌ１ｆＯ１など、低屈折率薄膜の構成物質と
しては、例えばＳｉＯ□。YzOx, 5CzQ2. NdFs, Th02.
Examples of constituent materials of the low refractive index thin film such as Zr0z and l1fO1 include SiO□.
ＭｇＦ、、丁ｈＦｚ、 ５ｒＦｔ、 ＩｊＦ＋ ＮａＦ
などが（受用されている。MgF, DinghFz, 5rFt, IjF+ NaF
etc. (accepted).
ところで、光学系に使用する光は、益々高強度で短波長
の光が要求され、現在、ようやく光強度が光強度が１．
３Ｊ／ｃｄ以上でλ＝ １９５〜３２５ ｎｍの遠紫外
レーザー光が実現しつつある。そのような高強度の遠紫
外用光源の有望なものはエキンマレーザーが実用化され
つつある。By the way, the light used in optical systems is increasingly required to have high intensity and short wavelength, and at present, the light intensity has finally reached the level of 1.
Far-ultraviolet laser light with a wavelength of λ=195 to 325 nm at 3 J/cd or more is becoming a reality. A promising high-intensity far-ultraviolet light source is the Ekinmar laser, which is being put into practical use.
しかしながら、このように光強度が１．３ Ｊ／ｃｎ以
上でλ＝１９５〜３２５ ｎｍの遠紫外レーザー光が入
射すると従来の光学薄膜では、光学薄膜が破損するとい
う間居点が生じて来た。However, when a far-ultraviolet laser beam with a light intensity of 1.3 J/cn or more and a wavelength of λ = 195 to 325 nm is incident on conventional optical thin films, a problem has arisen in which the optical thin film is damaged. .
本発明者らは、鋭意研究の結果、高屈折率薄膜の構成物
質としてフッ化ネオジムを使用した場合に限り、光強度
が１．３ Ｊ／ｃｄ以上の遠紫外レーザー光が入射して
も破損がないことを見い出し、本発明を成すに至った。As a result of intensive research, the present inventors have found that only when neodymium fluoride is used as a constituent material of a high refractive index thin film, even if deep ultraviolet laser light with a light intensity of 1.3 J/cd or more is incident, it will not be damaged. The present inventors have discovered that there is no such thing and have accomplished the present invention.
即ち、本発明は、光強度が１．３Ｊ／ｃｄ以上の遠紫外
レーザー光が入射する光学Ｆｉ膜であって、それが高屈
折率薄膜及び低屈折率薄膜からなる多層光学薄膜に於い
て、
前記高屈折率薄膜の構成物質としてフッ化ネオジムを使
用したことを特徴とする光学薄膜を提供する。That is, the present invention provides an optical Fi film into which far-ultraviolet laser light with a light intensity of 1.3 J/cd or more is incident, which is a multilayer optical thin film consisting of a high refractive index thin film and a low refractive index thin film. The present invention provides an optical thin film characterized in that neodymium fluoride is used as a constituent material of the high refractive index thin film.
本発明で使用されるフッ化ネオジム（ＮｄＰａ）それ自
身は、遠紫外領域で吸収がほとんどなく、薄膜状態で１
．６６〜１．７０の高屈折率を示す。The neodymium fluoride (NdPa) used in the present invention has almost no absorption in the far ultraviolet region, and has a
．． It exhibits a high refractive index of 66 to 1.70.
以下、実施例により本発明を具体的に説明するが、本発
明はこれに限定されるものではない。EXAMPLES Hereinafter, the present invention will be specifically explained with reference to Examples, but the present invention is not limited thereto.
石英基板（ｎａ ＝１．５１）の上に、高屈折率７Ｒ膜
としてλ／４の光学的膜厚を有するＮｄＦｓ薄Ｍ（ｎｄ
＝１．６６）を真空蒸着し、続いて低屈折率薄膜として
λ／４の光学的膜厚を有するＭｇＦｚＦｉｌＪＭ（ｎｄ
＝１．４０５）を真空蒸着することにより、２層反射防
止膜（設計基準波長λ＝２４８ ｎｍ）を作製した。NdFs thin M (nd
= 1.66), and then MgFzFilJM (nd
A two-layer anti-reflection film (design reference wavelength λ=248 nm) was fabricated by vacuum evaporating a film (=1.405).
この反射防止膜を裁板の片面に設けた場合の分光反射率
特性と、両面に設けた場合の分光透過率特性を測定した
ので、この結果を第３図及び第４図に示す。第３図及び
第４図では中心波長が設計波長より多少ずれているが、
これは製作誤差である。The spectral reflectance characteristics when this antireflection film was provided on one side of the cutting board and the spectral transmittance characteristics when it was provided on both sides were measured, and the results are shown in FIGS. 3 and 4. In Figures 3 and 4, the center wavelength is slightly shifted from the design wavelength,
This is a manufacturing error.
実施例と同種の基板上に高屈折率薄膜としてλ／４の光
学的膜厚を有するＡｌｚ（ｈ 薄膜（ｎ、＝１．７２
）を真空蒸着し、続いて低屈折率薄膜としてλ／４の光
学的膜厚を有するＳｉＯ□薄膜（ｎ４＝１．４４）を真
空蒸着することにより、２層反射防止膜（設計基準波長
λ＝２４８ ｎｍ）を作製した。An Alz(h thin film (n, = 1.72
), and then a SiO□ thin film (n4 = 1.44) having an optical thickness of λ/4 as a low refractive index thin film was vacuum evaporated. = 248 nm).
光源としてλ−２４８ｎａ＋のエキシマレーザ−を使用
し、光強度１．３Ｊ／−のレーザー光を２０ｎｓｅｃだ
け光学″ＦＩ［ｔＦＪに照射した。その後、光学薄膜の
表面を微分干渉型顕微鏡で観察し、孔のような破損があ
れば「ダメージ（Ｄａｍａｇｅ） Ｊと判定し、破損が
なければ「ノン・ダメージ（ＮｏｎＪａｍａｇｅ） Ｊ
と判定したところ、実施例のものはノン・ダメージであ
ったのに対して、比較例のものはダメージと判定された
。Using a λ-248na+ excimer laser as a light source, a laser beam with a light intensity of 1.3 J/- was irradiated onto the optical FI [tFJ for 20 nsec.Then, the surface of the optical thin film was observed with a differential interference microscope. If there is damage such as a hole, it will be judged as “Damage J”, and if there is no damage, it will be judged as “Non Damage (NonJamage) J”.
As a result, it was determined that the example had no damage, while the comparative example had damage.
そこで、今度は、同種の光学薄膜に対して光強度を変え
て何回か繰り返し、ｒ Ｎｏｎ−ＤａｍａｇｅＪと判定
されたときのレーザー光強度の最大値を求めた。Therefore, this time, the experiment was repeated several times with different light intensities for the same type of optical thin film, and the maximum value of the laser light intensity when it was determined to be rNon-DamageJ was determined.
この結果を次の第１表に記載する。The results are listed in Table 1 below.
第１表
〔発明の効果〕
以上のとおり、本発明によれば、光強度が１．３Ｊ／−
以上という強い遠紫外レーザー光が入射する光学薄膜に
於いて、レーザー光による損傷のでない光学薄膜が得ら
れる。Table 1 [Effects of the Invention] As described above, according to the present invention, the light intensity is 1.3 J/-
In the optical thin film upon which the intense far-ultraviolet laser beam is incident, an optical thin film that is not damaged by the laser beam can be obtained.
第１図は、実施例の反射防止膜の層構成を示す説明図で
あり、
第２図は、比較例の反射防止膜の層構成を示す説明図で
ある。
第３図は、実施例の反射防止膜（片面コート）の分光反
射率特性を測定したグラフである。
第４図は、実施例の反射防止膜（両面コート）の分光透
過率特性を測定したグラフである。FIG. 1 is an explanatory diagram showing the layer structure of an antireflection film of an example, and FIG. 2 is an explanatory diagram showing a layer structure of an antireflection film of a comparative example. FIG. 3 is a graph showing the spectral reflectance characteristics of the antireflection film (single-sided coating) of the example. FIG. 4 is a graph showing the spectral transmittance characteristics of the antireflection film (coated on both sides) of the example.
Claims (1)
入射する光学薄膜であって、高屈折率薄膜及び低屈折率
薄膜からなる多層光学薄膜において、前記高屈折率薄膜
の構成物質としてフッ化ネオジムを使用したことを特徴
とする光学薄膜。In an optical thin film into which deep ultraviolet laser light with a light intensity of 1.3 J/cm^2 or more is incident, the multilayer optical thin film consists of a high refractive index thin film and a low refractive index thin film, as a constituent material of the high refractive index thin film. An optical thin film characterized by the use of neodymium fluoride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61289697A JPS63142302A (en) | 1986-12-04 | 1986-12-04 | Optical thin film having high resistance to laser light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61289697A JPS63142302A (en) | 1986-12-04 | 1986-12-04 | Optical thin film having high resistance to laser light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63142302A true JPS63142302A (en) | 1988-06-14 |
Family
ID=17746572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61289697A Pending JPS63142302A (en) | 1986-12-04 | 1986-12-04 | Optical thin film having high resistance to laser light |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142302A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63163304A (en) * | 1986-12-25 | 1988-07-06 | Yamamoto Kogaku Kk | Laser light absorptive glass filter |
| WO2001035125A1 (en) * | 1999-11-05 | 2001-05-17 | Asahi Glass Company, Limited | Antireflection base for ultraviolet and vacuum ultraviolet regions |
| US6465272B1 (en) | 1999-07-22 | 2002-10-15 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method and mask devices |
| US6776006B2 (en) | 2000-10-13 | 2004-08-17 | Corning Incorporated | Method to avoid striae in EUV lithography mirrors |
| US6803248B2 (en) | 2001-12-21 | 2004-10-12 | Freescale Semiconductor, Inc. | Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers |
-
1986
- 1986-12-04 JP JP61289697A patent/JPS63142302A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63163304A (en) * | 1986-12-25 | 1988-07-06 | Yamamoto Kogaku Kk | Laser light absorptive glass filter |
| US6465272B1 (en) | 1999-07-22 | 2002-10-15 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method and mask devices |
| US6576380B2 (en) | 1999-07-22 | 2003-06-10 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method and mask devices |
| WO2001035125A1 (en) * | 1999-11-05 | 2001-05-17 | Asahi Glass Company, Limited | Antireflection base for ultraviolet and vacuum ultraviolet regions |
| US6628456B2 (en) | 1999-11-05 | 2003-09-30 | Asahi Glass Company, Limited | Ultraviolet and vacuum ultraviolet antireflection substrate |
| US6829084B2 (en) | 1999-11-05 | 2004-12-07 | Asahi Glass Company, Limited | Ultraviolet and vacuum ultraviolet antireflection substrate |
| KR100709045B1 (en) * | 1999-11-05 | 2007-04-18 | 아사히 가라스 가부시키가이샤 | Antireflection base for ultraviolet and vacuum ultraviolet regions |
| US6776006B2 (en) | 2000-10-13 | 2004-08-17 | Corning Incorporated | Method to avoid striae in EUV lithography mirrors |
| US6803248B2 (en) | 2001-12-21 | 2004-10-12 | Freescale Semiconductor, Inc. | Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers |
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