JPS63140653U - - Google Patents
Info
- Publication number
- JPS63140653U JPS63140653U JP3202087U JP3202087U JPS63140653U JP S63140653 U JPS63140653 U JP S63140653U JP 3202087 U JP3202087 U JP 3202087U JP 3202087 U JP3202087 U JP 3202087U JP S63140653 U JPS63140653 U JP S63140653U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- photo sensor
- conductivity type
- type semiconductor
- intrinsic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3202087U JPS63140653U (el) | 1987-03-04 | 1987-03-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3202087U JPS63140653U (el) | 1987-03-04 | 1987-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63140653U true JPS63140653U (el) | 1988-09-16 |
Family
ID=30838293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3202087U Pending JPS63140653U (el) | 1987-03-04 | 1987-03-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63140653U (el) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096118A (ja) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | 半導体素子用電極の製造方法、トランジスタの製造方法、ｐｉｎダイオードの製造方法、回路基板、電気光学装置、電子機器 |
-
1987
- 1987-03-04 JP JP3202087U patent/JPS63140653U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007096118A (ja) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | 半導体素子用電極の製造方法、トランジスタの製造方法、ｐｉｎダイオードの製造方法、回路基板、電気光学装置、電子機器 |
| JP4761199B2 (ja) * | 2005-09-29 | 2011-08-31 | セイコーエプソン株式会社 | 半導体素子用電極の製造方法、トランジスタの製造方法、およびｐｉｎダイオードの製造方法 |